CA2866616A1 - Copper-assisted, anti-reflection etching of silicon surfaces - Google Patents
Copper-assisted, anti-reflection etching of silicon surfaces Download PDFInfo
- Publication number
- CA2866616A1 CA2866616A1 CA2866616A CA2866616A CA2866616A1 CA 2866616 A1 CA2866616 A1 CA 2866616A1 CA 2866616 A CA2866616 A CA 2866616A CA 2866616 A CA2866616 A CA 2866616A CA 2866616 A1 CA2866616 A1 CA 2866616A1
- Authority
- CA
- Canada
- Prior art keywords
- etching
- silicon
- solution
- silicon surface
- percent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000005530 etching Methods 0.000 title claims abstract description 296
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 216
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 216
- 239000010703 silicon Substances 0.000 title claims abstract description 216
- 239000010949 copper Substances 0.000 title claims abstract description 93
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 29
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 139
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 238000002310 reflectometry Methods 0.000 claims abstract description 46
- 239000002105 nanoparticle Substances 0.000 claims abstract description 34
- 239000002245 particle Substances 0.000 claims abstract description 29
- 230000008021 deposition Effects 0.000 claims abstract description 23
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 230000003197 catalytic effect Effects 0.000 claims description 89
- 239000007800 oxidant agent Substances 0.000 claims description 28
- 238000000151 deposition Methods 0.000 claims description 26
- 239000003795 chemical substances by application Substances 0.000 claims description 24
- 238000001228 spectrum Methods 0.000 claims description 15
- 238000000527 sonication Methods 0.000 claims description 10
- 239000002923 metal particle Substances 0.000 claims description 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 claims description 6
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 4
- 235000010344 sodium nitrate Nutrition 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims 1
- 235000019396 potassium bromate Nutrition 0.000 claims 1
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 claims 1
- 239000012286 potassium permanganate Substances 0.000 claims 1
- 239000000243 solution Substances 0.000 abstract description 228
- 230000008569 process Effects 0.000 abstract description 57
- 238000013019 agitation Methods 0.000 abstract description 20
- 239000007864 aqueous solution Substances 0.000 abstract description 12
- 235000012431 wafers Nutrition 0.000 description 73
- 229910052751 metal Inorganic materials 0.000 description 72
- 239000002184 metal Substances 0.000 description 72
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 65
- 239000010931 gold Substances 0.000 description 50
- 229910052737 gold Inorganic materials 0.000 description 43
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 38
- 239000010410 layer Substances 0.000 description 33
- 229910052709 silver Inorganic materials 0.000 description 26
- 238000012360 testing method Methods 0.000 description 23
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 21
- 239000004332 silver Substances 0.000 description 21
- 229910001868 water Inorganic materials 0.000 description 19
- 241000894007 species Species 0.000 description 18
- 238000002474 experimental method Methods 0.000 description 16
- 150000002739 metals Chemical class 0.000 description 16
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 239000003054 catalyst Substances 0.000 description 11
- 238000000576 coating method Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000002156 mixing Methods 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 8
- 239000002253 acid Substances 0.000 description 7
- 238000013461 design Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000003756 stirring Methods 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 239000002086 nanomaterial Substances 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 229910052723 transition metal Inorganic materials 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 230000003667 anti-reflective effect Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 238000004626 scanning electron microscopy Methods 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000007792 addition Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910021418 black silicon Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 150000003624 transition metals Chemical class 0.000 description 4
- SJUCACGNNJFHLB-UHFFFAOYSA-N O=C1N[ClH](=O)NC2=C1NC(=O)N2 Chemical compound O=C1N[ClH](=O)NC2=C1NC(=O)N2 SJUCACGNNJFHLB-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000003760 magnetic stirring Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910000510 noble metal Inorganic materials 0.000 description 3
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Substances [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000002525 ultrasonication Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 239000002082 metal nanoparticle Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- -1 polytetrafluoroethylene Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 238000001055 reflectance spectroscopy Methods 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 230000009897 systematic effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 238000003631 wet chemical etching Methods 0.000 description 2
- 241000270728 Alligator Species 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- DKNPRRRKHAEUMW-UHFFFAOYSA-N Iodine aqueous Chemical compound [K+].I[I-]I DKNPRRRKHAEUMW-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910003087 TiOx Inorganic materials 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000003556 assay Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000000847 optical profilometry Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 230000000135 prohibitive effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Weting (AREA)
- Photovoltaic Devices (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/423,745 | 2012-03-19 | ||
| US13/423,745 US8815104B2 (en) | 2008-03-21 | 2012-03-19 | Copper-assisted, anti-reflection etching of silicon surfaces |
| PCT/US2013/030257 WO2013142122A1 (en) | 2012-03-19 | 2013-03-11 | Copper-assisted, anti-reflection etching of silicon surfaces |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2866616A1 true CA2866616A1 (en) | 2013-09-26 |
Family
ID=49223188
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2866616A Abandoned CA2866616A1 (en) | 2012-03-19 | 2013-03-11 | Copper-assisted, anti-reflection etching of silicon surfaces |
Country Status (6)
| Country | Link |
|---|---|
| EP (2) | EP2828895B1 (enExample) |
| JP (1) | JP5866477B2 (enExample) |
| CN (1) | CN104584231A (enExample) |
| CA (1) | CA2866616A1 (enExample) |
| IN (1) | IN2014DN07580A (enExample) |
| WO (1) | WO2013142122A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8815104B2 (en) | 2008-03-21 | 2014-08-26 | Alliance For Sustainable Energy, Llc | Copper-assisted, anti-reflection etching of silicon surfaces |
| US8828765B2 (en) | 2010-06-09 | 2014-09-09 | Alliance For Sustainable Energy, Llc | Forming high efficiency silicon solar cells using density-graded anti-reflection surfaces |
| CN103283001A (zh) | 2011-03-08 | 2013-09-04 | 可持续能源联盟有限责任公司 | 蓝光响应增强的高效黑硅光伏器件 |
| EP2828895B1 (en) | 2012-03-19 | 2020-10-07 | Alliance for Sustainable Energy, LLC | Copper-assisted, anti-reflection etching of silicon surfaces |
| CN103746038A (zh) * | 2014-01-09 | 2014-04-23 | 上海交通大学 | 一种多孔硅模板的制备方法 |
| CN105633180B (zh) * | 2016-03-23 | 2017-03-15 | 湖南大学 | 石墨烯辅助硅片湿法制绒的方法 |
| CN106498502A (zh) * | 2016-12-06 | 2017-03-15 | 南京理工大学 | 一种利用金属辅助刻蚀具有木材反向结构硅表面的方法 |
| CN106672974B (zh) * | 2016-12-15 | 2018-11-13 | 西南交通大学 | 一种制备硅微纳分级结构的新方法 |
| CN107946386A (zh) * | 2017-12-01 | 2018-04-20 | 浙江晶科能源有限公司 | 一种黑硅电池的绒面制备方法 |
| CN108133968A (zh) * | 2017-12-27 | 2018-06-08 | 南京理工大学 | 利用松木结构多孔铜辅助刻蚀锥状阵列硅表面的方法 |
| EP3739637A1 (de) | 2019-05-15 | 2020-11-18 | Meyer Burger (Germany) GmbH | Verfahren zur herstellung texturierter solarwafer |
| TWI742821B (zh) * | 2020-08-27 | 2021-10-11 | 國立成功大學 | 抗反射結構、其製造方法、光電元件及由溶液中回收銀離子的方法 |
| CN114291786A (zh) * | 2021-12-29 | 2022-04-08 | 杭州电子科技大学 | 一种磁场与振动结合的硅片微纳米结构制备装置 |
| CN114314504A (zh) * | 2021-12-29 | 2022-04-12 | 杭州电子科技大学 | 一种磁场与机械振动结合的硅纳米结构制备方法 |
| CN115506031B (zh) * | 2022-09-29 | 2025-10-31 | 南京信息职业技术学院 | 一种超滑硅表面及其制备方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4049329B2 (ja) * | 2002-06-06 | 2008-02-20 | 関西ティー・エル・オー株式会社 | 太陽電池用多結晶シリコン基板の製造方法 |
| TW200620451A (en) * | 2004-11-09 | 2006-06-16 | Univ Osaka | Method for forming hole in crystal substrate, and crystal substrate having hole formed by the method |
| JP2007194485A (ja) * | 2006-01-20 | 2007-08-02 | Osaka Univ | 太陽電池用シリコン基板の製造方法 |
| JP5442453B2 (ja) * | 2007-02-15 | 2014-03-12 | マサチューセッツ インスティテュート オブ テクノロジー | 凹凸化された表面を備えた太陽電池 |
| KR100971658B1 (ko) * | 2008-01-03 | 2010-07-22 | 엘지전자 주식회사 | 실리콘 태양전지의 텍스처링 방법 |
| US8075792B1 (en) * | 2008-03-21 | 2011-12-13 | Alliance For Sustainable Energy, Llc | Nanoparticle-based etching of silicon surfaces |
| US20090236317A1 (en) * | 2008-03-21 | 2009-09-24 | Midwest Research Institute | Anti-reflection etching of silicon surfaces catalyzed with ionic metal solutions |
| WO2011056948A2 (en) * | 2009-11-05 | 2011-05-12 | Advanced Technology Materials, Inc. | Methods of texturing surfaces for controlled reflection |
| TWI472477B (zh) * | 2010-03-02 | 2015-02-11 | 國立臺灣大學 | 矽奈米結構與其製造方法及應用 |
| US8193095B2 (en) * | 2010-05-28 | 2012-06-05 | National Taiwan University | Method for forming silicon trench |
| TW201200465A (en) * | 2010-06-29 | 2012-01-01 | Univ Nat Central | Nano/micro-structure and fabrication method thereof |
| JP2010245568A (ja) * | 2010-07-21 | 2010-10-28 | Mitsubishi Electric Corp | 太陽電池の製造方法 |
| CN102051618A (zh) * | 2010-11-05 | 2011-05-11 | 云南师范大学 | 一种基于液相化学反应的黑硅制备方法 |
| JP5467697B2 (ja) * | 2011-10-07 | 2014-04-09 | 株式会社ジェイ・イー・ティ | 太陽電池の製造方法 |
| EP2828895B1 (en) | 2012-03-19 | 2020-10-07 | Alliance for Sustainable Energy, LLC | Copper-assisted, anti-reflection etching of silicon surfaces |
| CN102768951A (zh) * | 2012-07-06 | 2012-11-07 | 南京大学 | 金属铜离子辅助刻蚀制备黑硅的方法 |
-
2013
- 2013-03-11 EP EP13764428.2A patent/EP2828895B1/en active Active
- 2013-03-11 IN IN7580DEN2014 patent/IN2014DN07580A/en unknown
- 2013-03-11 CA CA2866616A patent/CA2866616A1/en not_active Abandoned
- 2013-03-11 JP JP2015501724A patent/JP5866477B2/ja active Active
- 2013-03-11 CN CN201380021375.XA patent/CN104584231A/zh active Pending
- 2013-03-11 WO PCT/US2013/030257 patent/WO2013142122A1/en not_active Ceased
- 2013-03-11 EP EP20199628.7A patent/EP3780121A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015512566A (ja) | 2015-04-27 |
| WO2013142122A1 (en) | 2013-09-26 |
| EP2828895B1 (en) | 2020-10-07 |
| CN104584231A (zh) | 2015-04-29 |
| EP3780121A1 (en) | 2021-02-17 |
| JP5866477B2 (ja) | 2016-02-17 |
| EP2828895A1 (en) | 2015-01-28 |
| EP2828895A4 (en) | 2015-10-28 |
| IN2014DN07580A (enExample) | 2015-04-24 |
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