CN102086519B - 一种腐蚀溶液组合物、腐蚀方法及生成的硅晶片 - Google Patents
一种腐蚀溶液组合物、腐蚀方法及生成的硅晶片 Download PDFInfo
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- CN102086519B CN102086519B CN200910242300A CN200910242300A CN102086519B CN 102086519 B CN102086519 B CN 102086519B CN 200910242300 A CN200910242300 A CN 200910242300A CN 200910242300 A CN200910242300 A CN 200910242300A CN 102086519 B CN102086519 B CN 102086519B
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CN200910242300A CN102086519B (zh) | 2009-12-08 | 2009-12-08 | 一种腐蚀溶液组合物、腐蚀方法及生成的硅晶片 |
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CN200910242300A CN102086519B (zh) | 2009-12-08 | 2009-12-08 | 一种腐蚀溶液组合物、腐蚀方法及生成的硅晶片 |
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CN102086519A CN102086519A (zh) | 2011-06-08 |
CN102086519B true CN102086519B (zh) | 2012-10-10 |
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CN200910242300A Expired - Fee Related CN102086519B (zh) | 2009-12-08 | 2009-12-08 | 一种腐蚀溶液组合物、腐蚀方法及生成的硅晶片 |
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Families Citing this family (1)
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CN106449501B (zh) * | 2015-08-04 | 2019-12-31 | 北大方正集团有限公司 | 改善外延片背面平整度的方法和外延片 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3272748A (en) * | 1964-06-29 | 1966-09-13 | Western Electric Co | Etching of silicon and germanium |
CN101038892A (zh) * | 2007-04-25 | 2007-09-19 | 天津中环半导体股份有限公司 | 硅整流器件的刀刮法玻璃钝化工艺 |
CN101099230A (zh) * | 2004-12-23 | 2008-01-02 | 兰姆研究公司 | 通过酸性溶液进行的硅电极组件表面去污 |
CN101186827A (zh) * | 2006-11-23 | 2008-05-28 | S.O.I.Tec绝缘体上硅技术公司 | 无铬刻蚀溶液及揭示缺陷的方法和处理衬底的工艺 |
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- 2009-12-08 CN CN200910242300A patent/CN102086519B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3272748A (en) * | 1964-06-29 | 1966-09-13 | Western Electric Co | Etching of silicon and germanium |
CN101099230A (zh) * | 2004-12-23 | 2008-01-02 | 兰姆研究公司 | 通过酸性溶液进行的硅电极组件表面去污 |
CN101186827A (zh) * | 2006-11-23 | 2008-05-28 | S.O.I.Tec绝缘体上硅技术公司 | 无铬刻蚀溶液及揭示缺陷的方法和处理衬底的工艺 |
CN101038892A (zh) * | 2007-04-25 | 2007-09-19 | 天津中环半导体股份有限公司 | 硅整流器件的刀刮法玻璃钝化工艺 |
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CN102086519A (zh) | 2011-06-08 |
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Effective date of registration: 20220718 Address after: 518116 founder Microelectronics Industrial Park, No. 5, Baolong seventh Road, Baolong Industrial City, Longgang District, Shenzhen, Guangdong Province Patentee after: SHENZHEN FOUNDER MICROELECTRONICS Co.,Ltd. Address before: 100871, Beijing, Haidian District Cheng Fu Road 298, founder building, 9 floor Patentee before: PEKING UNIVERSITY FOUNDER GROUP Co.,Ltd. Patentee before: SHENZHEN FOUNDER MICROELECTRONICS Co.,Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
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Granted publication date: 20121010 |