IN2014CN00877A - - Google Patents
Info
- Publication number
- IN2014CN00877A IN2014CN00877A IN877CHN2014A IN2014CN00877A IN 2014CN00877 A IN2014CN00877 A IN 2014CN00877A IN 877CHN2014 A IN877CHN2014 A IN 877CHN2014A IN 2014CN00877 A IN2014CN00877 A IN 2014CN00877A
- Authority
- IN
- India
- Prior art keywords
- treating
- composition
- silicon substrates
- nxn
- alkaline
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 239000000203 mixture Substances 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 150000007513 acids Chemical class 0.000 abstract 1
- 125000001931 aliphatic group Chemical group 0.000 abstract 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 abstract 1
- 150000001342 alkaline earth metals Chemical class 0.000 abstract 1
- 125000002877 alkyl aryl group Chemical group 0.000 abstract 1
- 239000000908 ammonium hydroxide Substances 0.000 abstract 1
- 239000007853 buffer solution Substances 0.000 abstract 1
- 230000005611 electricity Effects 0.000 abstract 1
- 230000005670 electromagnetic radiation Effects 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 125000001453 quaternary ammonium group Chemical group 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Dispersion Chemistry (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Photovoltaic Devices (AREA)
- Materials Applied To Surfaces To Minimize Adherence Of Mist Or Water (AREA)
- Detergent Compositions (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161521386P | 2011-08-09 | 2011-08-09 | |
| PCT/IB2012/053576 WO2013021296A1 (en) | 2011-08-09 | 2012-07-12 | Aqueous alkaline compositions and method for treating the surface of silicon substrates |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2014CN00877A true IN2014CN00877A (enExample) | 2015-04-03 |
Family
ID=47667939
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN877CHN2014 IN2014CN00877A (enExample) | 2011-08-09 | 2012-07-12 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US20140134778A1 (enExample) |
| JP (1) | JP2014529641A (enExample) |
| KR (1) | KR101922855B1 (enExample) |
| CN (1) | CN103717687B (enExample) |
| IN (1) | IN2014CN00877A (enExample) |
| MY (1) | MY167595A (enExample) |
| PH (1) | PH12014500150A1 (enExample) |
| SG (1) | SG10201605697UA (enExample) |
| TW (1) | TWI564386B (enExample) |
| WO (1) | WO2013021296A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015033815A1 (ja) | 2013-09-05 | 2015-03-12 | 株式会社Ｋｉｔ | 水素製造装置、水素製造方法、水素製造用シリコン微細粒子、及び水素製造用シリコン微細粒子の製造方法 |
| CN104427781B (zh) * | 2013-09-11 | 2019-05-17 | 花王株式会社 | 树脂掩模层用洗涤剂组合物及电路基板的制造方法 |
| KR102668708B1 (ko) * | 2016-09-05 | 2024-05-23 | 동우 화인켐 주식회사 | 폴리실리콘 식각액 조성물 및 반도체 소자의 제조 방법 |
| WO2018083534A1 (en) * | 2016-11-03 | 2018-05-11 | Total Marketing Services | Surface treatment of solar cells |
| US10934485B2 (en) | 2017-08-25 | 2021-03-02 | Versum Materials Us, Llc | Etching solution for selectively removing silicon over silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device |
| CN108550639B (zh) * | 2018-03-21 | 2020-08-21 | 台州市棱智塑业有限公司 | 一种硅异质结太阳能电池界面处理剂及处理方法 |
| WO2020055529A1 (en) * | 2018-09-12 | 2020-03-19 | Fujifilm Electronic Materials U.S.A., Inc. | Etching compositions |
| KR102624328B1 (ko) * | 2018-10-31 | 2024-01-15 | 상라오 신위안 웨동 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 태양 전지 모듈 |
| SG11202103910PA (en) | 2018-11-15 | 2021-05-28 | Entegris Inc | Silicon nitride etching composition and method |
| CN109609290B (zh) * | 2018-12-13 | 2021-04-09 | 蓝思科技（长沙）有限公司 | 一种玻璃抛光后用清洗剂和清洗方法 |
| WO2020166676A1 (ja) * | 2019-02-13 | 2020-08-20 | 株式会社トクヤマ | 次亜塩素酸イオン、及びｐＨ緩衝剤を含む半導体ウェハの処理液 |
| WO2020195343A1 (ja) * | 2019-03-26 | 2020-10-01 | 富士フイルムエレクトロニクスマテリアルズ株式会社 | 洗浄液 |
| CN110473936A (zh) * | 2019-07-26 | 2019-11-19 | 镇江仁德新能源科技有限公司 | 一种单面湿法黑硅制绒方法 |
| KR102869325B1 (ko) * | 2019-09-10 | 2025-10-14 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 에칭 조성물 |
| CN112745990B (zh) * | 2019-10-30 | 2022-06-03 | 洛阳阿特斯光伏科技有限公司 | 一种无磷双组份清洗剂及其制备方法和应用 |
| KR102752252B1 (ko) | 2020-03-24 | 2025-01-10 | 동우 화인켐 주식회사 | 결정성 실리콘 식각액 조성물, 및 이를 이용한 패턴 형성 방법 |
| CN112680229A (zh) * | 2021-01-29 | 2021-04-20 | 深圳市百通达科技有限公司 | 一种湿电子化学的硅基材料蚀刻液及其制备方法 |
| JP7760429B2 (ja) * | 2022-03-29 | 2025-10-27 | 株式会社フジミインコーポレーテッド | 表面処理組成物、表面処理方法、および半導体基板の製造方法 |
| CN116536653A (zh) * | 2023-05-09 | 2023-08-04 | 苏州尊恒半导体科技有限公司 | 一种高均匀度的晶圆化镀前处理方法 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5466389A (en) * | 1994-04-20 | 1995-11-14 | J. T. Baker Inc. | PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates |
| US5989353A (en) * | 1996-10-11 | 1999-11-23 | Mallinckrodt Baker, Inc. | Cleaning wafer substrates of metal contamination while maintaining wafer smoothness |
| JP2000208466A (ja) * | 1999-01-12 | 2000-07-28 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
| JP4206233B2 (ja) * | 2002-07-22 | 2009-01-07 | 旭硝子株式会社 | 研磨剤および研磨方法 |
| US20040077295A1 (en) * | 2002-08-05 | 2004-04-22 | Hellring Stuart D. | Process for reducing dishing and erosion during chemical mechanical planarization |
| JP2005268665A (ja) * | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
| EP1609847B1 (en) * | 2004-06-25 | 2007-03-21 | JSR Corporation | Cleaning composition for semiconductor components and process for manufacturing semiconductor device |
| WO2006110279A1 (en) * | 2005-04-08 | 2006-10-19 | Sachem, Inc. | Selective wet etching of metal nitrides |
| WO2007019342A2 (en) * | 2005-08-05 | 2007-02-15 | Advanced Technology Materials, Inc. | High throughput chemical mechanical polishing composition for metal film planarization |
| KR100786949B1 (ko) * | 2005-12-08 | 2007-12-17 | 주식회사 엘지화학 | 연마 선택도 조절 보조제 및 이를 함유한 ｃｍｐ 슬러리 |
| JP2007180451A (ja) * | 2005-12-28 | 2007-07-12 | Fujifilm Corp | 化学的機械的平坦化方法 |
| US8685909B2 (en) * | 2006-09-21 | 2014-04-01 | Advanced Technology Materials, Inc. | Antioxidants for post-CMP cleaning formulations |
| JP2008124222A (ja) * | 2006-11-10 | 2008-05-29 | Fujifilm Corp | 研磨液 |
| WO2008078909A1 (en) * | 2006-12-22 | 2008-07-03 | Techno Semichem Co., Ltd. | Chemical mechanical polishing composition for copper comprising zeolite |
| JP2008181955A (ja) * | 2007-01-23 | 2008-08-07 | Fujifilm Corp | 金属用研磨液及びそれを用いた研磨方法 |
| JP2008277723A (ja) * | 2007-03-30 | 2008-11-13 | Fujifilm Corp | 金属用研磨液及び研磨方法 |
| WO2008138882A1 (en) * | 2007-05-14 | 2008-11-20 | Basf Se | Method for removing etching residues from semiconductor components |
| TWI498422B (zh) * | 2007-05-17 | 2015-09-01 | 安堤格里斯公司 | 用於化學機械研磨後（ｐｏｓｔ－ＣＭＰ）清洗配方之新穎抗氧化劑 |
| JP2010538127A (ja) * | 2007-08-31 | 2010-12-09 | ジェイエイチ バイオテック，インコーポレーティッド． | 固形状脂肪酸の製造 |
| WO2009064336A1 (en) * | 2007-11-16 | 2009-05-22 | Ekc Technology, Inc. | Compositions for removal of metal hard mask etching residues from a semiconductor substrate |
| KR101094662B1 (ko) * | 2008-07-24 | 2011-12-20 | 솔브레인 주식회사 | 폴리실리콘 연마정지제를 함유하는 화학 기계적 연마조성물 |
| JP5553985B2 (ja) * | 2008-12-11 | 2014-07-23 | 三洋化成工業株式会社 | 電子材料用洗浄剤 |
| US8361237B2 (en) * | 2008-12-17 | 2013-01-29 | Air Products And Chemicals, Inc. | Wet clean compositions for CoWP and porous dielectrics |
| CN102770524B (zh) * | 2010-01-29 | 2015-04-22 | 高级技术材料公司 | 附有金属布线的半导体用清洗剂 |
| CN103038311B (zh) * | 2010-06-09 | 2015-10-07 | 巴斯夫欧洲公司 | 含水碱性蚀刻和清洁组合物以及处理硅基材表面的方法 |
| EP2460860A1 (de) * | 2010-12-02 | 2012-06-06 | Basf Se | Verwendung von Mischungen zur Entfernung von Polyurethanen von Metalloberflächen |
-
2012
- 2012-07-12 IN IN877CHN2014 patent/IN2014CN00877A/en unknown
- 2012-07-12 WO PCT/IB2012/053576 patent/WO2013021296A1/en not_active Ceased
- 2012-07-12 KR KR1020147003265A patent/KR101922855B1/ko not_active Expired - Fee Related
- 2012-07-12 CN CN201280038487.1A patent/CN103717687B/zh not_active Expired - Fee Related
- 2012-07-12 JP JP2014524461A patent/JP2014529641A/ja active Pending
- 2012-07-12 PH PH1/2014/500150A patent/PH12014500150A1/en unknown
- 2012-07-12 SG SG10201605697UA patent/SG10201605697UA/en unknown
- 2012-07-12 MY MYPI2013004626A patent/MY167595A/en unknown
- 2012-07-12 US US14/131,304 patent/US20140134778A1/en not_active Abandoned
- 2012-08-09 TW TW101128828A patent/TWI564386B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2013021296A1 (en) | 2013-02-14 |
| CN103717687A (zh) | 2014-04-09 |
| SG10201605697UA (en) | 2016-09-29 |
| JP2014529641A (ja) | 2014-11-13 |
| TWI564386B (zh) | 2017-01-01 |
| CN103717687B (zh) | 2016-05-18 |
| TW201313894A (zh) | 2013-04-01 |
| KR101922855B1 (ko) | 2019-02-27 |
| KR20140057259A (ko) | 2014-05-12 |
| MY167595A (en) | 2018-09-20 |
| US20140134778A1 (en) | 2014-05-15 |
| PH12014500150A1 (en) | 2014-02-24 |
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