SG10201901030TA - Insulation layer etchant composition and method of forming pattern using the same - Google Patents

Insulation layer etchant composition and method of forming pattern using the same

Info

Publication number
SG10201901030TA
SG10201901030TA SG10201901030TA SG10201901030TA SG10201901030TA SG 10201901030T A SG10201901030T A SG 10201901030TA SG 10201901030T A SG10201901030T A SG 10201901030TA SG 10201901030T A SG10201901030T A SG 10201901030TA SG 10201901030T A SG10201901030T A SG 10201901030TA
Authority
SG
Singapore
Prior art keywords
silane compound
insulation layer
etchant composition
same
forming pattern
Prior art date
Application number
SG10201901030TA
Inventor
Eun Jung Lee
Han Young Choi
Byoung Mook Kim
Tae Hee Kim
Jeong Hwan Kim
Original Assignee
Dongwoo Fine Chem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongwoo Fine Chem Co Ltd filed Critical Dongwoo Fine Chem Co Ltd
Publication of SG10201901030TA publication Critical patent/SG10201901030TA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

An insulation layer etchant composition includes phosphoric acid, a silane compound including a first silane compound and a second silane compound, the first silane compound including a phosphoric acid soluble group combined to a silicon atom via a linker, the second silane compound having a lower water solubility than that of the first silane compound, and a remainer of water. An oxide layer may be passivated and a solubility may be enhanced by the first silane compound to improve etching properties. [Fig. 3]
SG10201901030TA 2018-02-13 2019-02-07 Insulation layer etchant composition and method of forming pattern using the same SG10201901030TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20180017450 2018-02-13
KR1020180138844A KR20190098030A (en) 2018-02-13 2018-11-13 Insulation layer etchant composition and method of forming pattern using the same

Publications (1)

Publication Number Publication Date
SG10201901030TA true SG10201901030TA (en) 2019-09-27

Family

ID=67808091

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201901030TA SG10201901030TA (en) 2018-02-13 2019-02-07 Insulation layer etchant composition and method of forming pattern using the same

Country Status (2)

Country Link
KR (1) KR20190098030A (en)
SG (1) SG10201901030TA (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102675057B1 (en) * 2019-10-29 2024-06-12 오씨아이 주식회사 Etching solution for silicon nitride layer and method for preparing semiconductor device using the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100823461B1 (en) 2007-05-11 2008-04-21 테크노세미켐 주식회사 Etchant composition for etching sio2 layer and sinx layer

Also Published As

Publication number Publication date
KR20190098030A (en) 2019-08-21

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