IN2014CN00877A - - Google Patents

Info

Publication number
IN2014CN00877A
IN2014CN00877A IN877CHN2014A IN2014CN00877A IN 2014CN00877 A IN2014CN00877 A IN 2014CN00877A IN 877CHN2014 A IN877CHN2014 A IN 877CHN2014A IN 2014CN00877 A IN2014CN00877 A IN 2014CN00877A
Authority
IN
India
Prior art keywords
treating
composition
silicon substrates
nxn
alkaline
Prior art date
Application number
Inventor
Berthold Ferstl
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of IN2014CN00877A publication Critical patent/IN2014CN00877A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

1333 n3n3 n22nn+An aqueous alkaline composition for treating the surface of silicon substrates the said composition comprising: (A) a quaternary ammonium hydroxide; and (B) a component selected from the group consisting of water soluble acids and their water soluble salts of the general formulas (I) to (V): (R S0 )nXn+ (I) R P02 (Xn+) (II); (RO S03 )nXn+ (III) RO P02 (X+) (IV) and [(RO)P0 ] X (V); wherein the n = 1 or 2; X is hydrogen ammonium or alkaline or alkaline earth metal; the variable R1 is an olefinically unsaturated aliphatic or cycloaliphatic moiety and R is R1 or an alkylaryl moiety; and (C) a buffer system wherein at least one component other than water is volatile; the use of the composition for treating silicon substrates a method for treating the surface of silicon substrates and methods for manufacturing devices generating electricity upon the exposure to electromagnetic radiation.
IN877CHN2014 2011-08-09 2012-07-12 IN2014CN00877A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161521386P 2011-08-09 2011-08-09
PCT/IB2012/053576 WO2013021296A1 (en) 2011-08-09 2012-07-12 Aqueous alkaline compositions and method for treating the surface of silicon substrates

Publications (1)

Publication Number Publication Date
IN2014CN00877A true IN2014CN00877A (en) 2015-04-03

Family

ID=47667939

Family Applications (1)

Application Number Title Priority Date Filing Date
IN877CHN2014 IN2014CN00877A (en) 2011-08-09 2012-07-12

Country Status (9)

Country Link
US (1) US20140134778A1 (en)
JP (1) JP2014529641A (en)
KR (1) KR101922855B1 (en)
CN (1) CN103717687B (en)
IN (1) IN2014CN00877A (en)
MY (1) MY167595A (en)
SG (1) SG10201605697UA (en)
TW (1) TWI564386B (en)
WO (1) WO2013021296A1 (en)

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CN110225667B (en) * 2013-09-11 2023-01-10 花王株式会社 Detergent composition for resin mask layer and method for manufacturing circuit board
US11271129B2 (en) * 2016-11-03 2022-03-08 Total Marketing Services Surface treatment of solar cells
US10934485B2 (en) 2017-08-25 2021-03-02 Versum Materials Us, Llc Etching solution for selectively removing silicon over silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device
CN108550639B (en) * 2018-03-21 2020-08-21 台州市棱智塑业有限公司 Silicon heterojunction solar cell interface treating agent and treating method
KR102624328B1 (en) * 2018-10-31 2024-01-15 상라오 신위안 웨동 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 Solar cell module
SG11202103910PA (en) 2018-11-15 2021-05-28 Entegris Inc Silicon nitride etching composition and method
CN109609290B (en) * 2018-12-13 2021-04-09 蓝思科技（长沙）有限公司 Cleaning agent and cleaning method for polished glass
TW202037706A (en) * 2019-02-13 2020-10-16 日商德山股份有限公司 Semiconductor wafer treatment liquid containing hypochlorite ions and ph buffer
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CN114651317A (en) * 2019-09-10 2022-06-21 富士胶片电子材料美国有限公司 Etching composition
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CN112680229A (en) * 2021-01-29 2021-04-20 深圳市百通达科技有限公司 Silicon-based material etching solution for wet electron chemistry and preparation method thereof

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Also Published As

Publication number Publication date
KR101922855B1 (en) 2019-02-27
US20140134778A1 (en) 2014-05-15
MY167595A (en) 2018-09-20
TWI564386B (en) 2017-01-01
CN103717687B (en) 2016-05-18
JP2014529641A (en) 2014-11-13
SG10201605697UA (en) 2016-09-29
CN103717687A (en) 2014-04-09
WO2013021296A1 (en) 2013-02-14
TW201313894A (en) 2013-04-01
KR20140057259A (en) 2014-05-12

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