JP2010514166A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2010514166A5 JP2010514166A5 JP2009541642A JP2009541642A JP2010514166A5 JP 2010514166 A5 JP2010514166 A5 JP 2010514166A5 JP 2009541642 A JP2009541642 A JP 2009541642A JP 2009541642 A JP2009541642 A JP 2009541642A JP 2010514166 A5 JP2010514166 A5 JP 2010514166A5
- Authority
- JP
- Japan
- Prior art keywords
- exposing
- layer
- oxygen
- plasma
- containing plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims 19
- 238000000034 method Methods 0.000 claims 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 11
- 229910052760 oxygen Inorganic materials 0.000 claims 11
- 239000001301 oxygen Substances 0.000 claims 11
- 239000002019 doping agent Substances 0.000 claims 9
- 239000012528 membrane Substances 0.000 claims 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 5
- 229910052739 hydrogen Inorganic materials 0.000 claims 5
- 239000001257 hydrogen Substances 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- 238000000151 deposition Methods 0.000 claims 4
- 238000005530 etching Methods 0.000 claims 3
- 238000003672 processing method Methods 0.000 claims 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 230000008878 coupling Effects 0.000 claims 2
- 238000010168 coupling process Methods 0.000 claims 2
- 238000005859 coupling reaction Methods 0.000 claims 2
- 239000012044 organic layer Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
- 238000009616 inductively coupled plasma Methods 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US87057506P | 2006-12-18 | 2006-12-18 | |
| US60/870,575 | 2006-12-18 | ||
| PCT/US2007/087894 WO2008077020A2 (en) | 2006-12-18 | 2007-12-18 | Safe handling of low energy, high dose arsenic, phosphorus, and boron implanted wafers |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010514166A JP2010514166A (ja) | 2010-04-30 |
| JP2010514166A5 true JP2010514166A5 (enExample) | 2010-12-09 |
| JP5383501B2 JP5383501B2 (ja) | 2014-01-08 |
Family
ID=39537046
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009541642A Expired - Fee Related JP5383501B2 (ja) | 2006-12-18 | 2007-12-18 | 低エネルギーの高用量ヒ素、リン、ホウ素注入ウエハの安全な取り扱い |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US20080153271A1 (enExample) |
| JP (1) | JP5383501B2 (enExample) |
| KR (1) | KR101369993B1 (enExample) |
| CN (1) | CN101548190A (enExample) |
| TW (1) | TWI508142B (enExample) |
| WO (1) | WO2008077020A2 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8118946B2 (en) * | 2007-11-30 | 2012-02-21 | Wesley George Lau | Cleaning process residues from substrate processing chamber components |
| CN102203946A (zh) * | 2008-10-31 | 2011-09-28 | 应用材料股份有限公司 | P3i工艺中掺杂分布的修正 |
| US7858503B2 (en) * | 2009-02-06 | 2010-12-28 | Applied Materials, Inc. | Ion implanted substrate having capping layer and method |
| TW201205648A (en) * | 2010-06-23 | 2012-02-01 | Tokyo Electron Ltd | Plasma doping device, plasma doping method, method for manufacturing semiconductor element, and semiconductor element |
| US8501605B2 (en) | 2011-03-14 | 2013-08-06 | Applied Materials, Inc. | Methods and apparatus for conformal doping |
| WO2012154373A2 (en) * | 2011-05-11 | 2012-11-15 | Applied Materials, Inc. | Surface dose retention of dopants by pre-amorphization and post-implant passivation treatments |
| WO2013164940A1 (ja) * | 2012-05-01 | 2013-11-07 | 東京エレクトロン株式会社 | 被処理基体にドーパントを注入する方法、及びプラズマドーピング装置 |
| US9840523B2 (en) | 2014-05-30 | 2017-12-12 | Dow Corning Corporation | Process of synthesizing diisopropylamino-disilanes |
| FR3033079B1 (fr) * | 2015-02-19 | 2018-04-27 | Ion Beam Services | Procede de passivation d'un substrat et machine pour la mise en oeuvre de ce procede |
| KR102555142B1 (ko) * | 2016-09-14 | 2023-07-13 | 어플라이드 머티어리얼스, 인코포레이티드 | 비소 관련 프로세스들을 위한 탈기 챔버 |
| US11501972B2 (en) * | 2020-07-22 | 2022-11-15 | Applied Materials, Inc. | Sacrificial capping layer for passivation using plasma-based implant process |
| US12494251B2 (en) * | 2022-08-26 | 2025-12-09 | Micron Technology, Inc. | Memory circuitry and method used in forming memory circuitry |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4226667A (en) * | 1978-10-31 | 1980-10-07 | Bell Telephone Laboratories, Incorporated | Oxide masking of gallium arsenide |
| US5196370A (en) * | 1990-11-08 | 1993-03-23 | Matsushita Electronics Corporation | Method of manufacturing an arsenic-including compound semiconductor device |
| JP3103629B2 (ja) * | 1990-11-08 | 2000-10-30 | 松下電子工業株式会社 | 砒化化合物半導体装置の製造方法 |
| US6039851A (en) * | 1995-03-22 | 2000-03-21 | Micron Technology, Inc. | Reactive sputter faceting of silicon dioxide to enhance gap fill of spaces between metal lines |
| JPH1131665A (ja) * | 1997-07-11 | 1999-02-02 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| KR100271043B1 (ko) * | 1997-11-28 | 2000-11-01 | 구본준, 론 위라하디락사 | 액정표시장치의 기판 및 그 제조방법(liquid crystal display and method of manufacturing the same) |
| EP0932191A1 (en) * | 1997-12-30 | 1999-07-28 | International Business Machines Corporation | Method of plasma etching doped polysilicon layers with uniform etch rates |
| US6376285B1 (en) * | 1998-05-28 | 2002-04-23 | Texas Instruments Incorporated | Annealed porous silicon with epitaxial layer for SOI |
| US6239034B1 (en) * | 1998-11-02 | 2001-05-29 | Vanguard International Semiconductor Corporation | Method of manufacturing inter-metal dielectric layers for semiconductor devices |
| US20020033233A1 (en) * | 1999-06-08 | 2002-03-21 | Stephen E. Savas | Icp reactor having a conically-shaped plasma-generating section |
| JP2001085392A (ja) * | 1999-09-10 | 2001-03-30 | Toshiba Corp | 半導体装置の製造方法 |
| US6586318B1 (en) * | 1999-12-28 | 2003-07-01 | Xerox Corporation | Thin phosphorus nitride film as an N-type doping source used in laser doping technology |
| US7037813B2 (en) * | 2000-08-11 | 2006-05-02 | Applied Materials, Inc. | Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage |
| US7064399B2 (en) * | 2000-09-15 | 2006-06-20 | Texas Instruments Incorporated | Advanced CMOS using super steep retrograde wells |
| US6613695B2 (en) * | 2000-11-24 | 2003-09-02 | Asm America, Inc. | Surface preparation prior to deposition |
| US6566283B1 (en) * | 2001-02-15 | 2003-05-20 | Advanced Micro Devices, Inc. | Silane treatment of low dielectric constant materials in semiconductor device manufacturing |
| US6855436B2 (en) * | 2003-05-30 | 2005-02-15 | International Business Machines Corporation | Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal |
| KR100428769B1 (ko) * | 2001-06-22 | 2004-04-28 | 삼성전자주식회사 | 반도체 롬 장치 형성 방법 |
| JP4151884B2 (ja) * | 2001-08-08 | 2008-09-17 | 独立行政法人理化学研究所 | 固体表面に複合金属酸化物のナノ材料が形成された材料の製造方法 |
| US7003111B2 (en) * | 2001-10-11 | 2006-02-21 | International Business Machines Corporation | Method, system, and program, for encoding and decoding input data |
| JP3578345B2 (ja) * | 2002-03-27 | 2004-10-20 | 株式会社半導体先端テクノロジーズ | 半導体装置の製造方法および半導体装置 |
| JP4001498B2 (ja) * | 2002-03-29 | 2007-10-31 | 東京エレクトロン株式会社 | 絶縁膜の形成方法及び絶縁膜の形成システム |
| US6743651B2 (en) * | 2002-04-23 | 2004-06-01 | International Business Machines Corporation | Method of forming a SiGe-on-insulator substrate using separation by implantation of oxygen |
| US20040072446A1 (en) * | 2002-07-02 | 2004-04-15 | Applied Materials, Inc. | Method for fabricating an ultra shallow junction of a field effect transistor |
| US6841457B2 (en) * | 2002-07-16 | 2005-01-11 | International Business Machines Corporation | Use of hydrogen implantation to improve material properties of silicon-germanium-on-insulator material made by thermal diffusion |
| US20050205986A1 (en) * | 2004-03-18 | 2005-09-22 | Ikuroh Ichitsubo | Module with integrated active substrate and passive substrate |
| US20060011906A1 (en) * | 2004-07-14 | 2006-01-19 | International Business Machines Corporation | Ion implantation for suppression of defects in annealed SiGe layers |
| US7037818B2 (en) * | 2004-08-20 | 2006-05-02 | International Business Machines Corporation | Apparatus and method for staircase raised source/drain structure |
| US7141457B2 (en) * | 2004-11-18 | 2006-11-28 | International Business Machines Corporation | Method to form Si-containing SOI and underlying substrate with different orientations |
| US20060205192A1 (en) * | 2005-03-09 | 2006-09-14 | Varian Semiconductor Equipment Associates, Inc. | Shallow-junction fabrication in semiconductor devices via plasma implantation and deposition |
| US7504314B2 (en) * | 2005-04-06 | 2009-03-17 | International Business Machines Corporation | Method for fabricating oxygen-implanted silicon on insulation type semiconductor and semiconductor formed therefrom |
-
2007
- 2007-12-18 WO PCT/US2007/087894 patent/WO2008077020A2/en not_active Ceased
- 2007-12-18 KR KR1020097015192A patent/KR101369993B1/ko not_active Expired - Fee Related
- 2007-12-18 US US11/958,541 patent/US20080153271A1/en not_active Abandoned
- 2007-12-18 TW TW096148507A patent/TWI508142B/zh not_active IP Right Cessation
- 2007-12-18 CN CNA2007800445412A patent/CN101548190A/zh active Pending
- 2007-12-18 JP JP2009541642A patent/JP5383501B2/ja not_active Expired - Fee Related
-
2010
- 2010-03-23 US US12/730,068 patent/US20100173484A1/en not_active Abandoned
-
2014
- 2014-05-12 US US14/275,408 patent/US8927400B2/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2010514166A5 (enExample) | ||
| USRE47170E1 (en) | Method of forming semiconductor patterns | |
| JP2010512650A5 (enExample) | ||
| JP2010534935A5 (enExample) | ||
| TWI636485B (zh) | 利用離子佈植於非晶碳膜中開發高蝕刻選擇性的硬光罩材料 | |
| JP2020502790A (ja) | 半導体処理装置 | |
| JP2015111668A5 (enExample) | ||
| JP2017501591A5 (enExample) | ||
| TW200834245A (en) | Method for manufacturing semiconductor device with four-layered laminate | |
| TW200834662A (en) | Wet photoresist stripping process and apparatus | |
| WO2015074621A1 (zh) | 控制浅沟槽深度微负载效应的刻蚀方法 | |
| JP2009531857A5 (enExample) | ||
| WO2013015559A2 (ko) | 그래핀의 원자층 식각 방법 | |
| TW201243998A (en) | Trench embedding method and film-forming apparatus | |
| JP2018512727A5 (enExample) | ||
| JP2011530174A5 (enExample) | ||
| TW200629416A (en) | Semiconductor device and fabrication method thereof | |
| JP2006528418A5 (enExample) | ||
| JP2019517743A5 (enExample) | ||
| TW200802540A (en) | Method and apparatus for providing mask in semiconductor processing | |
| CN101167165A (zh) | 增加pecvd氮化硅膜层的压缩应力的方法 | |
| CN1893028A (zh) | 具有氧化物间隔层的应变源漏cmos的集成方法 | |
| JP2012507866A5 (enExample) | ||
| TW550664B (en) | Method for forming a resist pattern and method for manufacturing a semiconductor device | |
| TW200623264A (en) | A method for forming a thin complete high-permittivity dielectric layer |