JP2012507866A5 - - Google Patents

Download PDF

Info

Publication number
JP2012507866A5
JP2012507866A5 JP2011534673A JP2011534673A JP2012507866A5 JP 2012507866 A5 JP2012507866 A5 JP 2012507866A5 JP 2011534673 A JP2011534673 A JP 2011534673A JP 2011534673 A JP2011534673 A JP 2011534673A JP 2012507866 A5 JP2012507866 A5 JP 2012507866A5
Authority
JP
Japan
Prior art keywords
plasma
substrate
gas
horizontal surfaces
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011534673A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012507866A (ja
JP5558480B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2009/062172 external-priority patent/WO2010051266A2/en
Publication of JP2012507866A publication Critical patent/JP2012507866A/ja
Publication of JP2012507866A5 publication Critical patent/JP2012507866A5/ja
Application granted granted Critical
Publication of JP5558480B2 publication Critical patent/JP5558480B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2011534673A 2008-10-31 2009-10-27 Ｐ３ｉチャンバにおける共形ドープの改善 Active JP5558480B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11047508P 2008-10-31 2008-10-31
US61/110,475 2008-10-31
PCT/US2009/062172 WO2010051266A2 (en) 2008-10-31 2009-10-27 Improving the conformal doping in p3i chamber

Publications (3)

Publication Number Publication Date
JP2012507866A JP2012507866A (ja) 2012-03-29
JP2012507866A5 true JP2012507866A5 (enExample) 2012-12-20
JP5558480B2 JP5558480B2 (ja) 2014-07-23

Family

ID=42129525

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011534673A Active JP5558480B2 (ja) 2008-10-31 2009-10-27 Ｐ３ｉチャンバにおける共形ドープの改善

Country Status (6)

Country Link
US (1) US8129261B2 (enExample)
JP (1) JP5558480B2 (enExample)
KR (1) KR101626565B1 (enExample)
CN (1) CN102203912B (enExample)
TW (1) TWI524391B (enExample)
WO (1) WO2010051266A2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8395132B2 (en) 2007-06-25 2013-03-12 International Rectifier Corporation Ion implanting while growing a III-nitride layer
US9218991B2 (en) 2007-06-25 2015-12-22 Infineon Technologies Americas Corp. Ion implantation at high temperature surface equilibrium conditions
CN103377888A (zh) * 2012-04-13 2013-10-30 南亚科技股份有限公司 掺杂区的制作方法
US20130288469A1 (en) * 2012-04-27 2013-10-31 Applied Materials, Inc. Methods and apparatus for implanting a dopant material
EP2765596B1 (en) * 2013-02-12 2018-07-11 Infineon Technologies Americas Corp. Ion implantation at high temperature surface equilibrium conditions
KR102342328B1 (ko) * 2014-07-03 2021-12-21 어플라이드 머티어리얼스, 인코포레이티드 선택적인 증착을 위한 방법 및 장치
TWI692799B (zh) * 2015-12-18 2020-05-01 美商應用材料股份有限公司 清潔方法
US11761080B2 (en) 2021-01-05 2023-09-19 Applied Materials, Inc. Method for processing a substrate by oscillating a boundary layer of the flow of one or more process gases over a surface of a substrate and systems for processing a substrate using the method

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US759521A (en) * 1903-06-01 1904-05-10 Archie G Hohenstein Steam-boiler.
JPS62198124A (ja) * 1986-02-26 1987-09-01 Mitsubishi Electric Corp 半導体装置の製造方法
US4728617A (en) * 1986-11-04 1988-03-01 Intel Corporation Method of fabricating a MOSFET with graded source and drain regions
JPS63200528A (ja) * 1987-02-17 1988-08-18 Toshiba Corp 半導体装置の製造方法
JPS6430224A (en) * 1987-07-27 1989-02-01 Matsushita Electric Industrial Co Ltd Plasma processing method
JPH01143254A (ja) * 1987-11-28 1989-06-05 Mitsubishi Electric Corp 半導体記憶装置
JPH01303718A (ja) * 1988-06-01 1989-12-07 Hitachi Ltd 半導体への不純物導入方法
JPH02159028A (ja) * 1988-12-13 1990-06-19 Matsushita Electric Ind Co Ltd プラズマによる固体表面付着物の除去方法
IT1225636B (it) * 1988-12-15 1990-11-22 Sgs Thomson Microelectronics Metodo di scavo con profilo di fondo arrotondato per strutture di isolamento incassate nel silicio
US5801082A (en) * 1997-08-18 1998-09-01 Vanguard International Semiconductor Corporation Method for making improved shallow trench isolation with dielectric studs for semiconductor integrated circuits
JP2001267326A (ja) * 2000-03-14 2001-09-28 Nec Yamagata Ltd 半導体装置及びその製造方法
US6312999B1 (en) * 2001-03-29 2001-11-06 Chartered Semiconductor Manufacturing Ltd. Method for forming PLDD structure with minimized lateral dopant diffusion
JP2005260071A (ja) 2004-03-12 2005-09-22 Sharp Corp 半導体記憶装置の製造方法
US20050287307A1 (en) * 2004-06-23 2005-12-29 Varian Semiconductor Equipment Associates, Inc. Etch and deposition control for plasma implantation
US7144673B2 (en) 2004-10-21 2006-12-05 Taiwan Semiconductor Manufacturing Co., Ltd. Effective photoresist stripping process for high dosage and high energy ion implantation
US7314804B2 (en) * 2005-01-04 2008-01-01 Intel Corporation Plasma implantation of impurities in junction region recesses
KR100761829B1 (ko) * 2005-12-15 2007-09-28 삼성전자주식회사 반도체 소자, 시모스 이미지 센서, 반도체 소자의 제조방법및 시모스 이미지 센서의 제조방법
KR100683867B1 (ko) * 2006-02-09 2007-02-15 삼성전자주식회사 반도체 소자 및 그 형성 방법
US7732309B2 (en) * 2006-12-08 2010-06-08 Applied Materials, Inc. Plasma immersed ion implantation process
KR100890256B1 (ko) * 2007-05-29 2009-03-24 삼성전자주식회사 리세스 채널 영역을 갖는 트랜지스터를 채택하는 반도체소자 및 그 제조 방법

Similar Documents

Publication Publication Date Title
JP2012507866A5 (enExample)
WO2008151309A3 (en) An ion implantation device and a method of semiconductor manufacturing by the implantation of ions derived from carborane cluster ions
TW200729304A (en) Methods for in-situ generation of reactive etch and growth specie in film formation processes
WO2010051266A3 (en) Improving the conformal doping in p3i chamber
WO2012170150A3 (en) Selective deposition of polymer films on bare silicon instead of oxide surface
TW200600609A (en) Method and apparatus for stable plasma processing
WO2007027798A3 (en) Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation
WO2010090903A3 (en) Method for forming trench isolation using a gas cluster ion beam growth process
TW200733195A (en) Semiconductor layer structure and method for fabricating it
TW200602510A (en) In-situ process chamber preparation methods for plasma ion implantation systems
EP2006249A3 (en) High resolution plasma etch
TW200707552A (en) Plasma doping method and plasma doping apparatus
PH12015501621A1 (en) Process for treatment by a beam of mono- or multicharged ions of a gas to produce antireflective glass materials
WO2013062831A3 (en) Process chamber for etching low k and other dielectric films
JP2018503259A5 (enExample)
SA516371270B1 (ar) صناعة منطقة إرسال خلية شمسية باستخدام تقنية زرع الأيونات
TW201247932A (en) Technique and apparatus for ion-assisted atomic layer deposition
WO2011087874A3 (en) Method of controlling trench microloading using plasma pulsing
TW200737404A (en) Semiconductor on glass insulator made using improved ion implantation process
MY171019A (en) Modification of magnetic properties of films using ion and neutral beam implantation
WO2011047142A3 (en) A technique for processing a substrate having a non-planar surface
TW200420736A (en) Photo mask blank, photo mask, method and apparatus for manufacturing of a photo mask blank
CN101017793B (zh) 一种扩散阻挡层的制作方法
SG136101A1 (en) Method of producing simox wafer
SG137776A1 (en) Method of producing semiconductor substrate