TWI524391B - 改善ｐ３ｉ腔室中共形摻雜之方法 - Google Patents

改善ｐ３ｉ腔室中共形摻雜之方法 Download PDF

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Publication number
TWI524391B
TWI524391B TW098136950A TW98136950A TWI524391B TW I524391 B TWI524391 B TW I524391B TW 098136950 A TW098136950 A TW 098136950A TW 98136950 A TW98136950 A TW 98136950A TW I524391 B TWI524391 B TW I524391B
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TW
Taiwan
Prior art keywords
substrate
plasma
gas
ions
etching
Prior art date
Application number
TW098136950A
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English (en)
Chinese (zh)
Other versions
TW201025428A (en
Inventor
波薛夫彼得
史寇特尼凱瑟馬修Ｄ
福德馬吉德Ａ
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW201025428A publication Critical patent/TW201025428A/zh
Application granted granted Critical
Publication of TWI524391B publication Critical patent/TWI524391B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H10P32/1204—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase from a plasma phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
TW098136950A 2008-10-31 2009-10-30 改善ｐ３ｉ腔室中共形摻雜之方法 TWI524391B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11047508P 2008-10-31 2008-10-31
US12/606,877 US8129261B2 (en) 2008-10-31 2009-10-27 Conformal doping in P3I chamber

Publications (2)

Publication Number Publication Date
TW201025428A TW201025428A (en) 2010-07-01
TWI524391B true TWI524391B (zh) 2016-03-01

Family

ID=42129525

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098136950A TWI524391B (zh) 2008-10-31 2009-10-30 改善ｐ３ｉ腔室中共形摻雜之方法

Country Status (6)

Country Link
US (1) US8129261B2 (enExample)
JP (1) JP5558480B2 (enExample)
KR (1) KR101626565B1 (enExample)
CN (1) CN102203912B (enExample)
TW (1) TWI524391B (enExample)
WO (1) WO2010051266A2 (enExample)

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US8395132B2 (en) 2007-06-25 2013-03-12 International Rectifier Corporation Ion implanting while growing a III-nitride layer
US9218991B2 (en) 2007-06-25 2015-12-22 Infineon Technologies Americas Corp. Ion implantation at high temperature surface equilibrium conditions
CN103377888A (zh) * 2012-04-13 2013-10-30 南亚科技股份有限公司 掺杂区的制作方法
US20130288469A1 (en) * 2012-04-27 2013-10-31 Applied Materials, Inc. Methods and apparatus for implanting a dopant material
EP2765596B1 (en) * 2013-02-12 2018-07-11 Infineon Technologies Americas Corp. Ion implantation at high temperature surface equilibrium conditions
KR102342328B1 (ko) * 2014-07-03 2021-12-21 어플라이드 머티어리얼스, 인코포레이티드 선택적인 증착을 위한 방법 및 장치
CN108292602B (zh) * 2015-12-18 2023-08-18 应用材料公司 清洁方法
US11761080B2 (en) 2021-01-05 2023-09-19 Applied Materials, Inc. Method for processing a substrate by oscillating a boundary layer of the flow of one or more process gases over a surface of a substrate and systems for processing a substrate using the method
CN118414691A (zh) 2022-01-04 2024-07-30 应用材料公司 电极调谐、沉积与蚀刻方法

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Also Published As

Publication number Publication date
KR101626565B1 (ko) 2016-06-01
WO2010051266A2 (en) 2010-05-06
JP2012507866A (ja) 2012-03-29
CN102203912B (zh) 2013-11-13
US20100112793A1 (en) 2010-05-06
WO2010051266A3 (en) 2010-07-29
CN102203912A (zh) 2011-09-28
TW201025428A (en) 2010-07-01
KR20110091722A (ko) 2011-08-12
US8129261B2 (en) 2012-03-06
JP5558480B2 (ja) 2014-07-23

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