JP2011139033A5 - - Google Patents
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- Publication number
- JP2011139033A5 JP2011139033A5 JP2010256165A JP2010256165A JP2011139033A5 JP 2011139033 A5 JP2011139033 A5 JP 2011139033A5 JP 2010256165 A JP2010256165 A JP 2010256165A JP 2010256165 A JP2010256165 A JP 2010256165A JP 2011139033 A5 JP2011139033 A5 JP 2011139033A5
- Authority
- JP
- Japan
- Prior art keywords
- forming
- film
- plasma
- silicon carbide
- hard mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims description 43
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 26
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 17
- 239000007789 gas Substances 0.000 claims description 16
- 239000002243 precursor Substances 0.000 claims description 15
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 238000002329 infrared spectrum Methods 0.000 claims description 4
- 238000009832 plasma treatment Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000012159 carrier gas Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 229910052743 krypton Inorganic materials 0.000 claims description 2
- 229910052754 neon Inorganic materials 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052724 xenon Inorganic materials 0.000 claims description 2
- 229910018540 Si C Inorganic materials 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/631,691 US8247332B2 (en) | 2009-12-04 | 2009-12-04 | Hardmask materials |
| US12/631,691 | 2009-12-04 | ||
| US12/631,709 | 2009-12-04 | ||
| US12/631,709 US8178443B2 (en) | 2009-12-04 | 2009-12-04 | Hardmask materials |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011139033A JP2011139033A (ja) | 2011-07-14 |
| JP2011139033A5 true JP2011139033A5 (enExample) | 2013-12-26 |
| JP5656010B2 JP5656010B2 (ja) | 2015-01-21 |
Family
ID=44130378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010256165A Expired - Fee Related JP5656010B2 (ja) | 2009-12-04 | 2010-11-16 | ハードマスク膜を形成する方法およびハードマスク膜を成膜する装置 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5656010B2 (enExample) |
| KR (2) | KR101798235B1 (enExample) |
| CN (2) | CN102097364B (enExample) |
| TW (2) | TWI547997B (enExample) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5723243B2 (ja) * | 2011-08-11 | 2015-05-27 | 東京エレクトロン株式会社 | 成膜方法、これを含む半導体装置の製造方法、成膜装置、及び半導体装置 |
| CN103258779B (zh) * | 2012-02-17 | 2015-05-20 | 中芯国际集成电路制造(上海)有限公司 | 铜互连结构及其制造方法 |
| JP5860734B2 (ja) * | 2012-03-13 | 2016-02-16 | 株式会社ライテック研究所 | 硬質皮膜被覆部材およびその製造方法 |
| US12334332B2 (en) | 2012-06-12 | 2025-06-17 | Lam Research Corporation | Remote plasma based deposition of silicon carbide films using silicon-containing and carbon-containing precursors |
| US20180347035A1 (en) | 2012-06-12 | 2018-12-06 | Lam Research Corporation | Conformal deposition of silicon carbide films using heterogeneous precursor interaction |
| US10832904B2 (en) | 2012-06-12 | 2020-11-10 | Lam Research Corporation | Remote plasma based deposition of oxygen doped silicon carbide films |
| US10325773B2 (en) | 2012-06-12 | 2019-06-18 | Novellus Systems, Inc. | Conformal deposition of silicon carbide films |
| US9234276B2 (en) | 2013-05-31 | 2016-01-12 | Novellus Systems, Inc. | Method to obtain SiC class of films of desired composition and film properties |
| JP6007031B2 (ja) * | 2012-08-23 | 2016-10-12 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
| JP2014078579A (ja) * | 2012-10-10 | 2014-05-01 | Renesas Electronics Corp | 半導体装置の製造方法 |
| KR102178326B1 (ko) * | 2012-12-18 | 2020-11-13 | 램 리써치 코포레이션 | 산소-함유 세라믹 하드 마스크들 및 관련 습식-세정들 |
| JP6111097B2 (ja) * | 2013-03-12 | 2017-04-05 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
| JP6111106B2 (ja) * | 2013-03-19 | 2017-04-05 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
| US10767259B2 (en) | 2013-07-19 | 2020-09-08 | Agilent Technologies, Inc. | Components with an atomic layer deposition coating and methods of producing the same |
| US20150024152A1 (en) * | 2013-07-19 | 2015-01-22 | Agilent Technologies, Inc. | Metal components with inert vapor phase coating on internal surfaces |
| CN104947085B (zh) * | 2014-03-31 | 2017-12-19 | 中芯国际集成电路制造(上海)有限公司 | 掩膜的沉积方法、掩膜及半导体器件的刻蚀方法 |
| US20160314964A1 (en) | 2015-04-21 | 2016-10-27 | Lam Research Corporation | Gap fill using carbon-based films |
| US10535558B2 (en) | 2016-02-09 | 2020-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming trenches |
| KR102130459B1 (ko) * | 2016-02-29 | 2020-07-07 | 가부시키가이샤 코쿠사이 엘렉트릭 | 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 |
| US9870915B1 (en) * | 2016-10-01 | 2018-01-16 | Applied Materials, Inc. | Chemical modification of hardmask films for enhanced etching and selective removal |
| US10388524B2 (en) | 2016-12-15 | 2019-08-20 | Tokyo Electron Limited | Film forming method, boron film, and film forming apparatus |
| US9837270B1 (en) * | 2016-12-16 | 2017-12-05 | Lam Research Corporation | Densification of silicon carbide film using remote plasma treatment |
| JP6914143B2 (ja) * | 2016-12-26 | 2021-08-04 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置、基板処理システム、基板処理システムの制御装置および半導体基板の製造方法 |
| KR102020211B1 (ko) * | 2017-01-09 | 2019-11-04 | 주식회사 테스 | 탄소 및/또는 보론를 포함하는 비정질 실리콘막의 형성 방법 |
| WO2018144198A1 (en) * | 2017-02-01 | 2018-08-09 | Applied Materials, Inc. | Boron doped tungsten carbide for hardmask applications |
| JP6914107B2 (ja) * | 2017-06-05 | 2021-08-04 | 東京エレクトロン株式会社 | ボロン膜の除去方法 |
| CN107742607B (zh) * | 2017-08-31 | 2021-05-11 | 重庆中科渝芯电子有限公司 | 一种用icp干法刻蚀制作薄膜电阻的方法 |
| US10474027B2 (en) * | 2017-11-13 | 2019-11-12 | Macronix International Co., Ltd. | Method for forming an aligned mask |
| JP7049883B2 (ja) * | 2018-03-28 | 2022-04-07 | 東京エレクトロン株式会社 | ボロン系膜の成膜方法および成膜装置 |
| GB201813467D0 (en) * | 2018-08-17 | 2018-10-03 | Spts Technologies Ltd | Method of depositing silicon nitride |
| JP7487189B2 (ja) | 2018-10-19 | 2024-05-20 | ラム リサーチ コーポレーション | 間隙充填のためのドープまたは非ドープシリコン炭化物および遠隔水素プラズマ曝露 |
| TWI853993B (zh) * | 2019-08-12 | 2024-09-01 | 美商應用材料股份有限公司 | 低k介電膜 |
| US11276573B2 (en) * | 2019-12-04 | 2022-03-15 | Applied Materials, Inc. | Methods of forming high boron-content hard mask materials |
| US11508573B2 (en) | 2019-12-31 | 2022-11-22 | Micron Technology, Inc. | Plasma doping of gap fill materials |
| WO2021173553A1 (en) * | 2020-02-24 | 2021-09-02 | Lam Research Corporation | High modulus boron-based ceramics for semiconductor applications |
| US11404263B2 (en) * | 2020-08-07 | 2022-08-02 | Applied Materials, Inc. | Deposition of low-stress carbon-containing layers |
| US11676813B2 (en) | 2020-09-18 | 2023-06-13 | Applied Materials, Inc. | Doping semiconductor films |
| CN114664649B (zh) * | 2022-05-19 | 2022-09-20 | 浙江大学杭州国际科创中心 | 碳化硅高深宽比槽刻蚀工艺优化方法 |
| CN115241126B (zh) * | 2022-09-21 | 2022-12-30 | 广州粤芯半导体技术有限公司 | 通孔刻蚀方法以及金属互连结构的制作方法 |
| JP2025133138A (ja) * | 2024-03-01 | 2025-09-11 | 東京エレクトロン株式会社 | 成膜方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA868641A (en) * | 1971-04-13 | L. Cuomo Jerome | Method for etching silicon nitride films with sharp edge definition | |
| US4895789A (en) * | 1988-03-29 | 1990-01-23 | Seiko Instruments Inc. | Method of manufacturing non-linear resistive element array |
| KR100219550B1 (ko) * | 1996-08-21 | 1999-09-01 | 윤종용 | 반사방지막 및 이를 이용한 패턴형성방법 |
| US6875687B1 (en) * | 1999-10-18 | 2005-04-05 | Applied Materials, Inc. | Capping layer for extreme low dielectric constant films |
| JP3430091B2 (ja) * | 1999-12-01 | 2003-07-28 | Ｎｅｃエレクトロニクス株式会社 | エッチングマスク及びエッチングマスクを用いたコンタクトホールの形成方法並びにその方法で形成した半導体装置 |
| US6794311B2 (en) * | 2000-07-14 | 2004-09-21 | Applied Materials Inc. | Method and apparatus for treating low k dielectric layers to reduce diffusion |
| TW535253B (en) * | 2000-09-08 | 2003-06-01 | Applied Materials Inc | Plasma treatment of silicon carbide films |
| US6803313B2 (en) * | 2002-09-27 | 2004-10-12 | Advanced Micro Devices, Inc. | Method for forming a hardmask employing multiple independently formed layers of a pecvd material to reduce pinholes |
| US7238393B2 (en) * | 2003-02-13 | 2007-07-03 | Asm Japan K.K. | Method of forming silicon carbide films |
| KR101158298B1 (ko) * | 2003-12-26 | 2012-06-26 | 닛산 가가쿠 고교 가부시키 가이샤 | 하드 마스크용 도포형 질화막 형성 조성물 |
| US7132374B2 (en) * | 2004-08-17 | 2006-11-07 | Cecilia Y. Mak | Method for depositing porous films |
| TW200631095A (en) * | 2005-01-27 | 2006-09-01 | Koninkl Philips Electronics Nv | A method of manufacturing a semiconductor device |
| JP4837370B2 (ja) * | 2005-12-05 | 2011-12-14 | 東京エレクトロン株式会社 | 成膜方法 |
| US7718518B2 (en) * | 2005-12-16 | 2010-05-18 | Asm International N.V. | Low temperature doped silicon layer formation |
| US7744746B2 (en) * | 2006-03-31 | 2010-06-29 | Exxonmobil Research And Engineering Company | FCC catalyst stripper configuration |
| WO2007116492A1 (ja) * | 2006-03-31 | 2007-10-18 | Fujitsu Microelectronics Limited | 半導体装置の製造方法 |
| US7528078B2 (en) * | 2006-05-12 | 2009-05-05 | Freescale Semiconductor, Inc. | Process of forming electronic device including a densified nitride layer adjacent to an opening within a semiconductor layer |
| US7550758B2 (en) * | 2006-10-31 | 2009-06-23 | Atmel Corporation | Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulator |
| US20100327413A1 (en) * | 2007-05-03 | 2010-12-30 | Lam Research Corporation | Hardmask open and etch profile control with hardmask open |
-
2010
- 2010-11-16 JP JP2010256165A patent/JP5656010B2/ja not_active Expired - Fee Related
- 2010-11-25 TW TW104126278A patent/TWI547997B/zh not_active IP Right Cessation
- 2010-11-25 TW TW099140866A patent/TWI505364B/zh not_active IP Right Cessation
- 2010-11-30 CN CN201010569747.0A patent/CN102097364B/zh active Active
- 2010-11-30 CN CN201510566292.XA patent/CN105185707B/zh active Active
- 2010-12-06 KR KR1020100123145A patent/KR101798235B1/ko active Active
-
2017
- 2017-11-08 KR KR1020170147917A patent/KR101907802B1/ko active Active
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