TWI547997B - 硬遮罩材料 - Google Patents

硬遮罩材料 Download PDF

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Publication number
TWI547997B
TWI547997B TW104126278A TW104126278A TWI547997B TW I547997 B TWI547997 B TW I547997B TW 104126278 A TW104126278 A TW 104126278A TW 104126278 A TW104126278 A TW 104126278A TW I547997 B TWI547997 B TW I547997B
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TW
Taiwan
Prior art keywords
film
hard mask
layer
plasma
gen
Prior art date
Application number
TW104126278A
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English (en)
Chinese (zh)
Other versions
TW201543574A (zh
Inventor
維許瓦納森 雷家拉健
喬治 安德魯 安東尼力
亞那達 班尼吉
史拉文德克 巴特 凡
Original Assignee
諾菲勒斯系統公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/631,691 external-priority patent/US8247332B2/en
Priority claimed from US12/631,709 external-priority patent/US8178443B2/en
Application filed by 諾菲勒斯系統公司 filed Critical 諾菲勒斯系統公司
Publication of TW201543574A publication Critical patent/TW201543574A/zh
Application granted granted Critical
Publication of TWI547997B publication Critical patent/TWI547997B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76811—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving multiple stacked pre-patterned masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76813—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving a partial via etch

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
TW104126278A 2009-12-04 2010-11-25 硬遮罩材料 TWI547997B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/631,691 US8247332B2 (en) 2009-12-04 2009-12-04 Hardmask materials
US12/631,709 US8178443B2 (en) 2009-12-04 2009-12-04 Hardmask materials

Publications (2)

Publication Number Publication Date
TW201543574A TW201543574A (zh) 2015-11-16
TWI547997B true TWI547997B (zh) 2016-09-01

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
TW104126278A TWI547997B (zh) 2009-12-04 2010-11-25 硬遮罩材料
TW099140866A TWI505364B (zh) 2009-12-04 2010-11-25 硬遮罩材料

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW099140866A TWI505364B (zh) 2009-12-04 2010-11-25 硬遮罩材料

Country Status (4)

Country Link
JP (1) JP5656010B2 (enExample)
KR (2) KR101798235B1 (enExample)
CN (2) CN102097364B (enExample)
TW (2) TWI547997B (enExample)

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CN103258779B (zh) * 2012-02-17 2015-05-20 中芯国际集成电路制造(上海)有限公司 铜互连结构及其制造方法
JP5860734B2 (ja) * 2012-03-13 2016-02-16 株式会社ライテック研究所 硬質皮膜被覆部材およびその製造方法
US12334332B2 (en) 2012-06-12 2025-06-17 Lam Research Corporation Remote plasma based deposition of silicon carbide films using silicon-containing and carbon-containing precursors
US20180347035A1 (en) 2012-06-12 2018-12-06 Lam Research Corporation Conformal deposition of silicon carbide films using heterogeneous precursor interaction
US10832904B2 (en) 2012-06-12 2020-11-10 Lam Research Corporation Remote plasma based deposition of oxygen doped silicon carbide films
US10325773B2 (en) 2012-06-12 2019-06-18 Novellus Systems, Inc. Conformal deposition of silicon carbide films
US9234276B2 (en) 2013-05-31 2016-01-12 Novellus Systems, Inc. Method to obtain SiC class of films of desired composition and film properties
JP6007031B2 (ja) * 2012-08-23 2016-10-12 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP2014078579A (ja) * 2012-10-10 2014-05-01 Renesas Electronics Corp 半導体装置の製造方法
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JP6111097B2 (ja) * 2013-03-12 2017-04-05 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6111106B2 (ja) * 2013-03-19 2017-04-05 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US10767259B2 (en) 2013-07-19 2020-09-08 Agilent Technologies, Inc. Components with an atomic layer deposition coating and methods of producing the same
US20150024152A1 (en) * 2013-07-19 2015-01-22 Agilent Technologies, Inc. Metal components with inert vapor phase coating on internal surfaces
CN104947085B (zh) * 2014-03-31 2017-12-19 中芯国际集成电路制造(上海)有限公司 掩膜的沉积方法、掩膜及半导体器件的刻蚀方法
US20160314964A1 (en) 2015-04-21 2016-10-27 Lam Research Corporation Gap fill using carbon-based films
US10535558B2 (en) 2016-02-09 2020-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming trenches
KR102130459B1 (ko) * 2016-02-29 2020-07-07 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램
US9870915B1 (en) * 2016-10-01 2018-01-16 Applied Materials, Inc. Chemical modification of hardmask films for enhanced etching and selective removal
US10388524B2 (en) 2016-12-15 2019-08-20 Tokyo Electron Limited Film forming method, boron film, and film forming apparatus
US9837270B1 (en) * 2016-12-16 2017-12-05 Lam Research Corporation Densification of silicon carbide film using remote plasma treatment
JP6914143B2 (ja) * 2016-12-26 2021-08-04 東京エレクトロン株式会社 基板処理方法、基板処理装置、基板処理システム、基板処理システムの制御装置および半導体基板の製造方法
KR102020211B1 (ko) * 2017-01-09 2019-11-04 주식회사 테스 탄소 및/또는 보론를 포함하는 비정질 실리콘막의 형성 방법
WO2018144198A1 (en) * 2017-02-01 2018-08-09 Applied Materials, Inc. Boron doped tungsten carbide for hardmask applications
JP6914107B2 (ja) * 2017-06-05 2021-08-04 東京エレクトロン株式会社 ボロン膜の除去方法
CN107742607B (zh) * 2017-08-31 2021-05-11 重庆中科渝芯电子有限公司 一种用icp干法刻蚀制作薄膜电阻的方法
US10474027B2 (en) * 2017-11-13 2019-11-12 Macronix International Co., Ltd. Method for forming an aligned mask
JP7049883B2 (ja) * 2018-03-28 2022-04-07 東京エレクトロン株式会社 ボロン系膜の成膜方法および成膜装置
GB201813467D0 (en) * 2018-08-17 2018-10-03 Spts Technologies Ltd Method of depositing silicon nitride
JP7487189B2 (ja) 2018-10-19 2024-05-20 ラム リサーチ コーポレーション 間隙充填のためのドープまたは非ドープシリコン炭化物および遠隔水素プラズマ曝露
TWI853993B (zh) * 2019-08-12 2024-09-01 美商應用材料股份有限公司 低k介電膜
US11276573B2 (en) * 2019-12-04 2022-03-15 Applied Materials, Inc. Methods of forming high boron-content hard mask materials
US11508573B2 (en) 2019-12-31 2022-11-22 Micron Technology, Inc. Plasma doping of gap fill materials
WO2021173553A1 (en) * 2020-02-24 2021-09-02 Lam Research Corporation High modulus boron-based ceramics for semiconductor applications
US11404263B2 (en) * 2020-08-07 2022-08-02 Applied Materials, Inc. Deposition of low-stress carbon-containing layers
US11676813B2 (en) 2020-09-18 2023-06-13 Applied Materials, Inc. Doping semiconductor films
CN114664649B (zh) * 2022-05-19 2022-09-20 浙江大学杭州国际科创中心 碳化硅高深宽比槽刻蚀工艺优化方法
CN115241126B (zh) * 2022-09-21 2022-12-30 广州粤芯半导体技术有限公司 通孔刻蚀方法以及金属互连结构的制作方法
JP2025133138A (ja) * 2024-03-01 2025-09-11 東京エレクトロン株式会社 成膜方法

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Also Published As

Publication number Publication date
KR101907802B1 (ko) 2018-12-05
JP2011139033A (ja) 2011-07-14
CN102097364A (zh) 2011-06-15
TW201130050A (en) 2011-09-01
CN102097364B (zh) 2015-10-14
KR20170126827A (ko) 2017-11-20
CN105185707A (zh) 2015-12-23
TWI505364B (zh) 2015-10-21
JP5656010B2 (ja) 2015-01-21
KR101798235B1 (ko) 2017-11-15
CN105185707B (zh) 2018-06-01
TW201543574A (zh) 2015-11-16
KR20110063386A (ko) 2011-06-10

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