JP2011530174A5 - - Google Patents
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- Publication number
- JP2011530174A5 JP2011530174A5 JP2011521251A JP2011521251A JP2011530174A5 JP 2011530174 A5 JP2011530174 A5 JP 2011530174A5 JP 2011521251 A JP2011521251 A JP 2011521251A JP 2011521251 A JP2011521251 A JP 2011521251A JP 2011530174 A5 JP2011530174 A5 JP 2011530174A5
- Authority
- JP
- Japan
- Prior art keywords
- flow rate
- porogen
- introducing
- organosilicon compounds
- dielectric constant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 7
- 150000003961 organosilicon compounds Chemical class 0.000 claims 6
- 239000003361 porogen Substances 0.000 claims 6
- 238000012545 processing Methods 0.000 claims 3
- CADNWBOFYYBQNV-UHFFFAOYSA-N 2,2,3,3-tetramethyl-1,2,5-oxadisilolane Chemical compound CC1(C)C[SiH2]O[Si]1(C)C CADNWBOFYYBQNV-UHFFFAOYSA-N 0.000 claims 1
- 229910018540 Si C Inorganic materials 0.000 claims 1
- 230000001548 androgenic effect Effects 0.000 claims 1
- 238000000137 annealing Methods 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 125000000753 cycloalkyl group Chemical group 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 238000012805 post-processing Methods 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 claims 1
- 238000010626 work up procedure Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/183,915 US7989033B2 (en) | 2007-07-12 | 2008-07-31 | Silicon precursors to make ultra low-K films with high mechanical properties by plasma enhanced chemical vapor deposition |
| US12/183,915 | 2008-07-31 | ||
| PCT/US2009/051983 WO2010014626A2 (en) | 2008-07-31 | 2009-07-28 | Novel silicon precursors to make ultra low-k films with high mechanical properties by plasma enhanced chemical vapor deposition |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011530174A JP2011530174A (ja) | 2011-12-15 |
| JP2011530174A5 true JP2011530174A5 (enExample) | 2012-09-13 |
| JP5312588B2 JP5312588B2 (ja) | 2013-10-09 |
Family
ID=41610936
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011521251A Active JP5312588B2 (ja) | 2008-07-31 | 2009-07-28 | プラズマ促進化学蒸着で高い機械的諸特性を有する超低ｋ膜を作製するための新規なケイ素前駆体 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7989033B2 (enExample) |
| JP (1) | JP5312588B2 (enExample) |
| KR (1) | KR101139593B1 (enExample) |
| CN (1) | CN102113099B (enExample) |
| TW (1) | TWI388685B (enExample) |
| WO (1) | WO2010014626A2 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8298965B2 (en) * | 2008-09-03 | 2012-10-30 | American Air Liquide, Inc. | Volatile precursors for deposition of C-linked SiCOH dielectrics |
| KR20130043084A (ko) | 2010-02-17 | 2013-04-29 | 레르 리키드 쏘시에떼 아노님 뿌르 레？드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | ＳｉＣＯＨ 로우-Ｋ 필름의 증착 방법 |
| JP2011254041A (ja) * | 2010-06-04 | 2011-12-15 | Renesas Electronics Corp | 半導体装置 |
| US20120121823A1 (en) * | 2010-11-12 | 2012-05-17 | Applied Materials, Inc. | Process for lowering adhesion layer thickness and improving damage resistance for thin ultra low-k dielectric film |
| US9054110B2 (en) | 2011-08-05 | 2015-06-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Low-K dielectric layer and porogen |
| KR102053350B1 (ko) * | 2013-06-13 | 2019-12-06 | 삼성전자주식회사 | 저유전율 절연층을 가진 반도체 소자를 형성하는 방법 |
| US10453675B2 (en) * | 2013-09-20 | 2019-10-22 | Versum Materials Us, Llc | Organoaminosilane precursors and methods for depositing films comprising same |
| CN105720005B (zh) * | 2014-12-04 | 2019-04-26 | 中芯国际集成电路制造(上海)有限公司 | 超低k介质层的形成方法 |
| US20160214165A1 (en) * | 2015-01-26 | 2016-07-28 | General Electric Company | Porous ceramic materials for investment casting |
| KR102624608B1 (ko) | 2016-01-19 | 2024-01-16 | 삼성전자주식회사 | 저유전막의 형성 방법 및 이를 이용한 반도체 소자의 제조 방법 |
| US10249489B2 (en) * | 2016-11-02 | 2019-04-02 | Versum Materials Us, Llc | Use of silyl bridged alkyl compounds for dense OSG films |
| WO2019055393A1 (en) * | 2017-09-14 | 2019-03-21 | Versum Material Us, Llc | COMPOSITIONS AND METHODS FOR DEPOSITION OF FILMS CONTAINING SILICON |
| JP7230067B2 (ja) * | 2018-06-15 | 2023-02-28 | バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー | シロキサン組成物、及び前記組成物を使用してケイ素含有膜を堆積させるための方法 |
| US11594409B2 (en) | 2020-02-28 | 2023-02-28 | Applied Materials, Inc. | Systems and methods for depositing low-k dielectric films |
| US20240087881A1 (en) * | 2022-08-26 | 2024-03-14 | Applied Materials, Inc. | Systems and methods for depositing low-k dielectric films |
Family Cites Families (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3560435A (en) * | 1968-10-24 | 1971-02-02 | Dow Corning | Method of polymerizing organosilicon compounds using a nitro catalyst |
| US5118530A (en) | 1990-11-28 | 1992-06-02 | Dow Corning Corporation | Use of hydrogen silsesquioxane resin fractions as coating materials |
| US6303523B2 (en) * | 1998-02-11 | 2001-10-16 | Applied Materials, Inc. | Plasma processes for depositing low dielectric constant films |
| JP3756666B2 (ja) * | 1998-05-08 | 2006-03-15 | 松下電器産業株式会社 | 多孔質膜の形成方法及びその形成装置 |
| US6541367B1 (en) | 2000-01-18 | 2003-04-01 | Applied Materials, Inc. | Very low dielectric constant plasma-enhanced CVD films |
| KR20010106905A (ko) | 2000-05-24 | 2001-12-07 | 황 철 주 | 저유전율 ＳｉＯＣ 박막의 형성방법 |
| US6583048B2 (en) | 2001-01-17 | 2003-06-24 | Air Products And Chemicals, Inc. | Organosilicon precursors for interlayer dielectric films with low dielectric constants |
| SG98468A1 (en) * | 2001-01-17 | 2003-09-19 | Air Prod & Chem | Organosilicon precursors for interlayer dielectric films with low dielectric constants |
| US6570256B2 (en) * | 2001-07-20 | 2003-05-27 | International Business Machines Corporation | Carbon-graded layer for improved adhesion of low-k dielectrics to silicon substrates |
| US7384471B2 (en) | 2002-04-17 | 2008-06-10 | Air Products And Chemicals, Inc. | Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants |
| US6936551B2 (en) | 2002-05-08 | 2005-08-30 | Applied Materials Inc. | Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices |
| EP1504138A2 (en) * | 2002-05-08 | 2005-02-09 | Applied Materials, Inc. | Method for using low dielectric constant film by electron beam |
| US7056560B2 (en) | 2002-05-08 | 2006-06-06 | Applies Materials Inc. | Ultra low dielectric materials based on hybrid system of linear silicon precursor and organic porogen by plasma-enhanced chemical vapor deposition (PECVD) |
| US7122880B2 (en) | 2002-05-30 | 2006-10-17 | Air Products And Chemicals, Inc. | Compositions for preparing low dielectric materials |
| US7404990B2 (en) * | 2002-11-14 | 2008-07-29 | Air Products And Chemicals, Inc. | Non-thermal process for forming porous low dielectric constant films |
| US6825130B2 (en) * | 2002-12-12 | 2004-11-30 | Asm Japan K.K. | CVD of porous dielectric materials |
| US6897163B2 (en) * | 2003-01-31 | 2005-05-24 | Applied Materials, Inc. | Method for depositing a low dielectric constant film |
| US7098149B2 (en) * | 2003-03-04 | 2006-08-29 | Air Products And Chemicals, Inc. | Mechanical enhancement of dense and porous organosilicate materials by UV exposure |
| US7169715B2 (en) * | 2003-03-21 | 2007-01-30 | Intel Corporation | Forming a dielectric layer using porogens |
| JP4295588B2 (ja) * | 2003-09-22 | 2009-07-15 | 大日本印刷株式会社 | 反射防止ガスバリア性基板 |
| US7345000B2 (en) * | 2003-10-10 | 2008-03-18 | Tokyo Electron Limited | Method and system for treating a dielectric film |
| US20050161060A1 (en) | 2004-01-23 | 2005-07-28 | Johnson Andrew D. | Cleaning CVD chambers following deposition of porogen-containing materials |
| JP4202951B2 (ja) * | 2004-03-08 | 2008-12-24 | 東京エレクトロン株式会社 | 半導体装置の配線形成方法 |
| US7547643B2 (en) * | 2004-03-31 | 2009-06-16 | Applied Materials, Inc. | Techniques promoting adhesion of porous low K film to underlying barrier layer |
| JP4452546B2 (ja) * | 2004-04-21 | 2010-04-21 | Ｊｓｒ株式会社 | 積層体膜、積層膜の製造方法、絶縁膜ならびに半導体装置 |
| US7166544B2 (en) | 2004-09-01 | 2007-01-23 | Applied Materials, Inc. | Method to deposit functionally graded dielectric films via chemical vapor deposition using viscous precursors |
| US7138767B2 (en) | 2004-09-30 | 2006-11-21 | Tokyo Electron Limited | Surface wave plasma processing system and method of using |
| US7491658B2 (en) * | 2004-10-13 | 2009-02-17 | International Business Machines Corporation | Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality |
| US7229934B2 (en) | 2004-10-18 | 2007-06-12 | International Business Machines Corporation | Porous organosilicates with improved mechanical properties |
| US7892648B2 (en) * | 2005-01-21 | 2011-02-22 | International Business Machines Corporation | SiCOH dielectric material with improved toughness and improved Si-C bonding |
| US7273823B2 (en) | 2005-06-03 | 2007-09-25 | Applied Materials, Inc. | Situ oxide cap layer development |
| US7381659B2 (en) | 2005-11-22 | 2008-06-03 | International Business Machines Corporation | Method for reducing film stress for SiCOH low-k dielectric materials |
| US7521377B2 (en) * | 2006-01-11 | 2009-04-21 | International Business Machines Corporation | SiCOH film preparation using precursors with built-in porogen functionality |
| US7297376B1 (en) * | 2006-07-07 | 2007-11-20 | Applied Materials, Inc. | Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layers |
| US7615482B2 (en) * | 2007-03-23 | 2009-11-10 | International Business Machines Corporation | Structure and method for porous SiCOH dielectric layers and adhesion promoting or etch stop layers having increased interfacial and mechanical strength |
-
2008
- 2008-07-31 US US12/183,915 patent/US7989033B2/en active Active
-
2009
- 2009-07-28 JP JP2011521251A patent/JP5312588B2/ja active Active
- 2009-07-28 WO PCT/US2009/051983 patent/WO2010014626A2/en not_active Ceased
- 2009-07-28 KR KR1020117004857A patent/KR101139593B1/ko active Active
- 2009-07-28 CN CN200980130954.1A patent/CN102113099B/zh not_active Expired - Fee Related
- 2009-07-30 TW TW098125718A patent/TWI388685B/zh active
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