KR101139593B1 - 저유전상수 필름을 증착시키는 방법 - Google Patents

저유전상수 필름을 증착시키는 방법 Download PDF

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KR101139593B1
KR101139593B1 KR1020117004857A KR20117004857A KR101139593B1 KR 101139593 B1 KR101139593 B1 KR 101139593B1 KR 1020117004857 A KR1020117004857 A KR 1020117004857A KR 20117004857 A KR20117004857 A KR 20117004857A KR 101139593 B1 KR101139593 B1 KR 101139593B1
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dielectric constant
low dielectric
chamber
porogen
constant film
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KR20110052674A (ko
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임강섭
알렉산드로스 티. 데모스
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020117004857A 2008-07-31 2009-07-28 저유전상수 필름을 증착시키는 방법 Active KR101139593B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/183,915 US7989033B2 (en) 2007-07-12 2008-07-31 Silicon precursors to make ultra low-K films with high mechanical properties by plasma enhanced chemical vapor deposition
US12/183,915 2008-07-31
PCT/US2009/051983 WO2010014626A2 (en) 2008-07-31 2009-07-28 Novel silicon precursors to make ultra low-k films with high mechanical properties by plasma enhanced chemical vapor deposition

Publications (2)

Publication Number Publication Date
KR20110052674A KR20110052674A (ko) 2011-05-18
KR101139593B1 true KR101139593B1 (ko) 2012-07-02

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KR1020117004857A Active KR101139593B1 (ko) 2008-07-31 2009-07-28 저유전상수 필름을 증착시키는 방법

Country Status (6)

Country Link
US (1) US7989033B2 (enExample)
JP (1) JP5312588B2 (enExample)
KR (1) KR101139593B1 (enExample)
CN (1) CN102113099B (enExample)
TW (1) TWI388685B (enExample)
WO (1) WO2010014626A2 (enExample)

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JP2011254041A (ja) * 2010-06-04 2011-12-15 Renesas Electronics Corp 半導体装置
US20120121823A1 (en) * 2010-11-12 2012-05-17 Applied Materials, Inc. Process for lowering adhesion layer thickness and improving damage resistance for thin ultra low-k dielectric film
US9054110B2 (en) 2011-08-05 2015-06-09 Taiwan Semiconductor Manufacturing Company, Ltd. Low-K dielectric layer and porogen
KR102053350B1 (ko) * 2013-06-13 2019-12-06 삼성전자주식회사 저유전율 절연층을 가진 반도체 소자를 형성하는 방법
US10453675B2 (en) * 2013-09-20 2019-10-22 Versum Materials Us, Llc Organoaminosilane precursors and methods for depositing films comprising same
CN105720005B (zh) * 2014-12-04 2019-04-26 中芯国际集成电路制造(上海)有限公司 超低k介质层的形成方法
US20160214165A1 (en) * 2015-01-26 2016-07-28 General Electric Company Porous ceramic materials for investment casting
KR102624608B1 (ko) 2016-01-19 2024-01-16 삼성전자주식회사 저유전막의 형성 방법 및 이를 이용한 반도체 소자의 제조 방법
US10249489B2 (en) * 2016-11-02 2019-04-02 Versum Materials Us, Llc Use of silyl bridged alkyl compounds for dense OSG films
WO2019055393A1 (en) * 2017-09-14 2019-03-21 Versum Material Us, Llc COMPOSITIONS AND METHODS FOR DEPOSITION OF FILMS CONTAINING SILICON
JP7230067B2 (ja) * 2018-06-15 2023-02-28 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー シロキサン組成物、及び前記組成物を使用してケイ素含有膜を堆積させるための方法
US11594409B2 (en) 2020-02-28 2023-02-28 Applied Materials, Inc. Systems and methods for depositing low-k dielectric films
US20240087881A1 (en) * 2022-08-26 2024-03-14 Applied Materials, Inc. Systems and methods for depositing low-k dielectric films

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US20040096672A1 (en) 2002-11-14 2004-05-20 Lukas Aaron Scott Non-thermal process for forming porous low dielectric constant films

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US20040096672A1 (en) 2002-11-14 2004-05-20 Lukas Aaron Scott Non-thermal process for forming porous low dielectric constant films

Also Published As

Publication number Publication date
TWI388685B (zh) 2013-03-11
US7989033B2 (en) 2011-08-02
CN102113099A (zh) 2011-06-29
CN102113099B (zh) 2013-06-12
JP5312588B2 (ja) 2013-10-09
WO2010014626A2 (en) 2010-02-04
US20090017231A1 (en) 2009-01-15
WO2010014626A3 (en) 2010-04-15
TW201012962A (en) 2010-04-01
KR20110052674A (ko) 2011-05-18
JP2011530174A (ja) 2011-12-15

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