ATE528784T1 - Verfahren zur bildung eines films aus amorphen silizium durch plasmaabscheidung - Google Patents

Verfahren zur bildung eines films aus amorphen silizium durch plasmaabscheidung

Info

Publication number
ATE528784T1
ATE528784T1 AT07819350T AT07819350T ATE528784T1 AT E528784 T1 ATE528784 T1 AT E528784T1 AT 07819350 T AT07819350 T AT 07819350T AT 07819350 T AT07819350 T AT 07819350T AT E528784 T1 ATE528784 T1 AT E528784T1
Authority
AT
Austria
Prior art keywords
plasma
enclosure
outlet
gas
film
Prior art date
Application number
AT07819350T
Other languages
English (en)
Inventor
I Cabarrocas Pere Roca
Pavel Bulkin
Dmitri Daineka
Patrick Leempoel
Pierre Descamps
De Meerendre Thibault Kervyn
Original Assignee
Dow Corning
Ecole Polytech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning, Ecole Polytech filed Critical Dow Corning
Application granted granted Critical
Publication of ATE528784T1 publication Critical patent/ATE528784T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
AT07819350T 2006-11-02 2007-10-26 Verfahren zur bildung eines films aus amorphen silizium durch plasmaabscheidung ATE528784T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP06301115A EP1918965A1 (de) 2006-11-02 2006-11-02 Verfahren und Apparat zur Erzeugung eines Films durch Abscheidung aus einem Plasma
PCT/EP2007/009303 WO2008052703A1 (en) 2006-11-02 2007-10-26 Method and apparatus for forming a film by deposition from a plasma

Publications (1)

Publication Number Publication Date
ATE528784T1 true ATE528784T1 (de) 2011-10-15

Family

ID=37813198

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07819350T ATE528784T1 (de) 2006-11-02 2007-10-26 Verfahren zur bildung eines films aus amorphen silizium durch plasmaabscheidung

Country Status (7)

Country Link
US (1) US8859929B2 (de)
EP (2) EP1918965A1 (de)
JP (1) JP5350259B2 (de)
KR (1) KR101488005B1 (de)
CN (1) CN101578683B (de)
AT (1) ATE528784T1 (de)
WO (1) WO2008052703A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1918414A1 (de) 2006-11-02 2008-05-07 Dow Corning Corporation Verfahren zur Bildung eines Films aus amorphen Materialen mit gradiertem Bandabstand durch Elektronzyklotronresonanz
EP1918967B1 (de) 2006-11-02 2013-12-25 Dow Corning Corporation Verfahren zur Herstellung einer Schicht durch Abscheidung aus einem Plasma
EP1923483A1 (de) 2006-11-02 2008-05-21 Dow Corning Corporation Abscheidung von amorphen Siliziumschichten durch Elektronzyclotron-Wellenresonanz
EP1919264A1 (de) 2006-11-02 2008-05-07 Dow Corning Corporation Vorrichtung zur Herstellung eines Films durch Abscheidung von einem Plasma
EP1918966A1 (de) 2006-11-02 2008-05-07 Dow Corning Corporation Verfahren zur Herstellung einer Schicht mit gradiertem Bandabstand durch Abscheidung eines amorphen Stoffes aus einem Plasma
US8435906B2 (en) * 2009-01-28 2013-05-07 Applied Materials, Inc. Methods for forming conformal oxide layers on semiconductor devices
KR101929607B1 (ko) * 2011-06-03 2018-12-14 가부시키가이샤 와타나베 쇼코 Ｃｖｄ 장치, 및 ｃｖｄ 막의 제조 방법
FR2984769B1 (fr) * 2011-12-22 2014-03-07 Total Sa Procede de texturation de la surface d'un substrat de silicium, substrat structure et dispositif photovoltaique comportant un tel substrat structure
TWI522490B (zh) * 2012-05-10 2016-02-21 應用材料股份有限公司 利用微波電漿化學氣相沈積在基板上沈積膜的方法
CN103114278B (zh) * 2013-02-06 2014-12-24 上海君威新能源装备有限公司 平面磁控ecr-pecvd等离子源装置
CN104505326A (zh) * 2014-12-19 2015-04-08 中国科学院嘉兴微电子仪器与设备工程中心 一种应用于等离子体设备的腔室结构及等离子体设备
US11037765B2 (en) * 2018-07-03 2021-06-15 Tokyo Electron Limited Resonant structure for electron cyclotron resonant (ECR) plasma ionization
CN110491762A (zh) * 2019-08-23 2019-11-22 兰州城市学院 一种线性微波表面波等离子体沉积装置

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ES505268A0 (es) 1980-09-09 1982-12-16 Energy Conversion Devices Inc Metodo para preparar una aleacion amorfa fotosensible mejo- rada
EG18056A (en) 1986-02-18 1991-11-30 Solarex Corp Dispositif feedstock materials useful in the fabrication of hydrogenated amorphous silicon alloys for photo-voltaic devices and other semiconductor devices
US5133826A (en) * 1989-03-09 1992-07-28 Applied Microwave Plasma Concepts, Inc. Electron cyclotron resonance plasma source
JP2719230B2 (ja) 1990-11-22 1998-02-25 キヤノン株式会社 光起電力素子
DE9102438U1 (de) * 1991-03-01 1992-06-25 Röhm GmbH, 6100 Darmstadt Niederdruck-Plasmagenerator
JPH05314918A (ja) 1992-05-13 1993-11-26 Nissin Electric Co Ltd イオン源用マイクロ波アンテナ
CA2102948C (en) 1992-11-16 1998-10-27 Keishi Saito Photoelectric conversion element and power generation system using the same
FR2702119B1 (fr) 1993-02-25 1995-07-13 Metal Process Dispositif d'excitation d'un plasma à la résonance cyclotronique électronique par l'intermédiaire d'un applicateur filaire d'un champ micro-onde et d'un champ magnétique statique.
US5279866A (en) * 1993-06-10 1994-01-18 Applied Science And Technology Inc. Process for depositing wear-resistant coatings
FR2711035B1 (fr) * 1993-10-04 1995-12-29 Plasmion Dispositif et procédé pour former un plasma par application de micro-ondes.
FR2726729B1 (fr) * 1994-11-04 1997-01-31 Metal Process Dispositif de production d'un plasma permettant une dissociation entre les zones de propagation et d'absorption des micro-ondes
JPH1081968A (ja) 1996-09-03 1998-03-31 Nippon Hoso Kyokai <Nhk> 非晶質シリコン膜の作製法
US6163006A (en) * 1998-02-06 2000-12-19 Astex-Plasmaquest, Inc. Permanent magnet ECR plasma source with magnetic field optimization
FR2797372B1 (fr) * 1999-08-04 2002-10-25 Metal Process Procede de production de plasmas elementaires en vue de creer un plasma uniforme pour une surface d'utilisation et dispositif de production d'un tel plasma
JP2001332749A (ja) 2000-05-23 2001-11-30 Canon Inc 半導体薄膜の形成方法およびアモルファスシリコン太陽電池素子
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EP1923483A1 (de) 2006-11-02 2008-05-21 Dow Corning Corporation Abscheidung von amorphen Siliziumschichten durch Elektronzyclotron-Wellenresonanz
EP1918966A1 (de) 2006-11-02 2008-05-07 Dow Corning Corporation Verfahren zur Herstellung einer Schicht mit gradiertem Bandabstand durch Abscheidung eines amorphen Stoffes aus einem Plasma
EP1921178A1 (de) 2006-11-02 2008-05-14 Dow Corning Corporation Verfahren zur Bildung eines Films aus amorphen Materialen durch Elektronzyklotronresonanz
EP1918967B1 (de) 2006-11-02 2013-12-25 Dow Corning Corporation Verfahren zur Herstellung einer Schicht durch Abscheidung aus einem Plasma
EP1918414A1 (de) 2006-11-02 2008-05-07 Dow Corning Corporation Verfahren zur Bildung eines Films aus amorphen Materialen mit gradiertem Bandabstand durch Elektronzyklotronresonanz
EP1919264A1 (de) 2006-11-02 2008-05-07 Dow Corning Corporation Vorrichtung zur Herstellung eines Films durch Abscheidung von einem Plasma

Also Published As

Publication number Publication date
WO2008052703A1 (en) 2008-05-08
JP2010508444A (ja) 2010-03-18
KR101488005B1 (ko) 2015-01-29
KR20090084915A (ko) 2009-08-05
US8859929B2 (en) 2014-10-14
CN101578683B (zh) 2012-11-07
EP2087502A1 (de) 2009-08-12
EP2087502B1 (de) 2011-10-12
JP5350259B2 (ja) 2013-11-27
CN101578683A (zh) 2009-11-11
EP1918965A1 (de) 2008-05-07
US20100105195A1 (en) 2010-04-29

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