WO2011108219A1 - 薄膜形成装置 - Google Patents
薄膜形成装置 Download PDFInfo
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- WO2011108219A1 WO2011108219A1 PCT/JP2011/000957 JP2011000957W WO2011108219A1 WO 2011108219 A1 WO2011108219 A1 WO 2011108219A1 JP 2011000957 W JP2011000957 W JP 2011000957W WO 2011108219 A1 WO2011108219 A1 WO 2011108219A1
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- WIPO (PCT)
- Prior art keywords
- thin film
- electrode plate
- path portion
- film forming
- main surface
- Prior art date
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- 239000010409 thin film Substances 0.000 title claims abstract description 57
- 239000010408 film Substances 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000002994 raw material Substances 0.000 claims abstract description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 37
- 238000000926 separation method Methods 0.000 claims description 2
- 230000004048 modification Effects 0.000 description 13
- 238000012986 modification Methods 0.000 description 13
- 230000005540 biological transmission Effects 0.000 description 10
- 239000011521 glass Substances 0.000 description 9
- 238000005192 partition Methods 0.000 description 9
- 239000002344 surface layer Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 230000001965 increasing effect Effects 0.000 description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000005404 monopole Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to a thin film forming apparatus for forming a thin film on a substrate using plasma.
- CVD Chemical Vapor
- Deposition Chemical Vapor
- a process of forming an amorphous Si thin film used for a thin film solar cell on a glass substrate by using a CVD apparatus has attracted attention.
- monosilane (SiH 4 ) is turned into plasma to form an amorphous Si thin film on a glass substrate.
- thin-film solar cell panels have become larger, and it is desired to form a uniform amorphous Si thin film on a large panel. For this reason, in a plasma CVD apparatus, it is necessary to form a high-density plasma uniformly.
- a plasma generation method in which a plurality of high-frequency antennas are installed in a plasma generation chamber, and inductively coupled plasma is generated by applying high-frequency power to the plasma generation chamber gas with the high-frequency antenna;
- a plasma generator is known (Patent Document 1).
- the plasma generation method and the plasma generation apparatus at least some of the plurality of high-frequency antennas are sequentially arranged adjacent to each other, and the adjacent ones are arranged in parallel with each other facing each other. Install. Further, the plurality of high-frequency antennas are installed adjacent to each other in order and arranged in parallel with each other adjacent to each other.
- the electron temperature in the inductively coupled plasma is controlled by controlling the phase of the high frequency voltage applied to each of the high frequency antennas.
- a plasma generation device including a vacuum vessel, an opening provided on a wall surface of the vacuum vessel, and a plate-like high-frequency antenna conductor attached so as to cover the opening in an airtight manner (patent) Reference 2). Since the plasma generation apparatus has a structure in which a high-frequency antenna conductor is attached to the opening of the plasma generation apparatus, it is possible to generate plasma with high uniformity over a wide range.
- FIG. 4A is a diagram illustrating a simplified configuration of an example of a plasma film forming apparatus using the plate-shaped high-frequency antenna conductor described above.
- the electrode plate 102 is provided outside the film forming chamber of the film forming container 104 in the opening of the partition wall 106, and the surface of the partition wall 106 facing the film forming space is provided. Is provided with a dielectric 108.
- a glass substrate G for forming a thin film is disposed at a position facing the dielectric 108.
- the glass substrate G is placed on a susceptor 112 provided on the heater 110.
- FIG. 4B is a schematic perspective view of the electrode plate 102 that generates a magnetic field in the film formation space.
- the electrode plate 102 is a plate-like electrode as shown in FIG. One end face of the electrode plate 102 is connected to a high frequency power supply of several tens of MHz, and the other end face of the electrode plate 102 is grounded. In the electrode plate 102, current flows in the X direction. In the method of generating plasma using the electrode plate 102, the plasma is generated using the generated magnetic field, unlike the above-described apparatus that generates plasma using high voltage generated by a plurality of adjacent high frequency antennas. Is done.
- the density of the plasma generated by the electrode plate 102 is not sufficient for forming an amorphous Si thin film, and there is a problem that the film forming speed is slow.
- the above-described known plasma generation method and plasma generation apparatus that generate inductively coupled plasma by supplying high-frequency power to a plurality of high-frequency antennas have a problem that a sufficient plasma density cannot be generated uniformly. is there.
- the present invention provides a thin film forming apparatus that can efficiently form a thin film with a uniform plasma density when a thin film is formed on a substrate using plasma. With the goal.
- One aspect of the present invention is a thin film forming apparatus for forming a thin film on a substrate, A film formation container having a film formation space for forming a thin film on a substrate in a reduced pressure state; A raw material gas introduction section for introducing a raw material gas for a thin film into the film formation space of the film formation container; A plasma electrode unit for generating plasma using the thin film source gas in the film formation space;
- the plasma electrode portion is a plate member in which a current flows from one end surface to the other end surface, and an electrode plate having an outward path portion and a return path portion that are bent in the middle and in which the current flow direction of the plate member is parallel to each other. , Provided as an electrode for plasma generation.
- the length of the forward path part and the length of the return path part of the return path part are equal. Further, it is preferable that the forward path part and the return path part have the same width, and a separation distance between the forward path part and the return path part is 1 to 1.6 times a width of the forward path part and the return path part. .
- the electrode plate preferably has a thickness greater than 0.2 mm.
- the first main surface of the electrode plate is disposed so as to face the film formation space, and a plurality of groove-shaped recesses extending along the current direction are provided in the forward path portion and the return path portion of the first main surface. It may be done.
- the first main surface of the electrode plate is disposed so as to face the film formation space, and the second main surface opposite to the first main surface is along a direction orthogonal to the current direction. It is preferable to have unevenness that extends. At this time, it is preferable that the unevenness is formed by a plurality of plate members standing on the second main surface.
- the generated plasma density can be made uniform and the thin film can be formed efficiently.
- FIG. 1 is a perspective view which shows an example of the electrode plate used for the thin film forming apparatus shown in FIG. 1
- (b) is a perspective view which shows the 1st modification different from the electrode plate shown in (a).
- (A), (b) is a figure explaining the relationship between the electrode plate and the electron density of the plasma produced
- (A), (b) is a figure explaining the example of the electrode plate used for the conventional thin film formation apparatus.
- FIG. 1 is a schematic diagram showing a configuration of a thin film forming apparatus 10 according to an embodiment of the present invention.
- a thin film forming apparatus 10 shown in FIG. 1 is a CVD apparatus that forms a thin film on a substrate using generated plasma.
- the thin film forming apparatus 10 is a system that generates plasma by a magnetic field generated by a current flowing through an electrode plate. This method is different from a method in which plasma is generated by a high voltage generated by resonance of an antenna element such as a monopole antenna.
- the thin film forming apparatus 10 includes a power supply unit 12, a film forming container 14, a gas supply unit 16, and a gas exhaust unit 18.
- the power supply unit 12 includes a high frequency power source 22, a high frequency cable 24, a matching box 26, transmission lines 28 and 29 (see FIG. 2A), and an electrode plate 30.
- the high frequency power supply 22 supplies high frequency power of several tens of MHz to the electrode plate 30 at 10 to 1000 W, for example.
- the matching box 26 matches impedance so that power supplied through the high-frequency cable 24 is efficiently supplied to the electrode plate 30.
- the matching box 26 includes a known matching circuit provided with elements such as a capacitor and an inductor.
- the transmission line 28 extending from the matching box 26 is, for example, a copper plate-like transmission line having a certain width, and can pass a current of several amperes to the electrode plate 30.
- the transmission line 29 extends from the electrode plate 30 and is grounded.
- the electrode plate 30 is a plate member fixed on a partition wall 32 to be described later, and the first main surface of the plate member is arranged in parallel to the partition wall 32 toward the film formation space in the film formation container 14. Has been.
- the electrode plate 30 allows current to flow along the longitudinal direction of the plate member between the end face to which the transmission line 28 is connected and the end face to which the transmission line 29 is connected.
- the electrode plate 30 is bent in the middle in the direction of current flow to form a U shape. This point will be described later.
- the film formation container 14 has an internal space 38 in the container, and the internal space 38 is divided into an upper space and a lower film formation space 40 by a partition wall 32.
- the film forming container 14 is formed of a material such as aluminum, for example, and is sealed so that the internal space 38 can be in a reduced pressure state of 0.1 to 100 Pa.
- a matching box 26, transmission lines 28 and 29, and an electrode plate 30 are provided in the upper space of the film forming container 14.
- An electrode plate 30 is fixed to the side of the partition wall 32 facing the upper space.
- An insulating member 34 is provided around the electrode plate 30 to insulate the surrounding partition wall 32.
- a dielectric 36 is provided on the side of the partition wall 32 facing the film formation space 40.
- a quartz plate is used for the dielectric 36.
- the dielectric 36 is provided in order to prevent the electrode plate 30 from being corroded by plasma and to efficiently supply electromagnetic energy to the plasma.
- a heater 42 heats the glass substrate 20 placed on the susceptor 44 to a predetermined temperature, for example, about 250 ° C.
- the susceptor 44 places the glass substrate 20 thereon.
- the elevating mechanism 46 moves the susceptor 44 on which the glass substrate 20 is placed together with the heater 42 freely in the film forming space 40.
- the glass substrate 20 is set at a predetermined position so as to be close to the electrode plate 30.
- the gas supply unit 16 includes a gas tank 48 and a mass flow controller 50.
- the gas tank 48 stores monosilane gas (SiH 4 ), which is a raw material gas for a thin film.
- the mass flow controller 50 is a part that adjusts the flow rate of the monosilane gas. For example, the flow rate of the monosilane gas can be adjusted according to the results of the film thickness and film quality of the formed film.
- the monosilane gas is supplied into the film formation space 40 from the side wall of the film formation space 40 of the film formation container 14.
- the gas exhaust unit 18 includes an exhaust pipe extending from a side wall in the film formation space 40, a turbo molecular pump 52, and a dry pump 54.
- the dry pump 54 roughens the inside of the film formation space 40, and the turbo molecular pump 52 maintains the pressure in the film formation space 40 in a predetermined reduced pressure state.
- the turbo molecular pump 52 and the dry pump 54 are connected by an exhaust pipe.
- FIG. 2A is a perspective view of an example of the electrode plate 30 used in the power supply unit 12.
- the electrode plate 30 is a long plate member in which a current flows from one end surface 30a to the other end surface 30b, and has a U-shape. That is, part of the electrode plate 30 is bent 180 degrees in the longitudinal direction of the plate member, and has an outward path portion 30c and a return path portion 30d that are parallel to each other.
- the electrode plate 30 is used as an electrode for plasma generation. For example, copper, aluminum, or the like is used for the electrode plate 30.
- the end face 30 a of the forward path portion 30 c of the electrode plate 30 is supplied with power via the matching box 26 and the transmission line 28.
- the return path portion 30 d is grounded via the transmission line 29.
- the length in the forward path portion 30c, that is, the length from the end surface 30a to the bent portion, and the length in the return path portion 30d, that is, the length from the bent portion to the end surface 30b are preferably equal. This is to make the plasma density described later uniform.
- the forward path portion 30c and the return path portion 30d have the same width (width in the X direction in the figure).
- the distance d between the forward path portion 30c and the backward path portion 30d is 1 to 1.6 times the width of the forward path portion 30c and the backward path portion 30d. This is because a uniform plasma is generated by generating a uniform magnetic field. preferable.
- FIGS. 3A and 3B are diagrams for explaining the relationship between the electrode plate and the electron density of the generated plasma.
- the electrode plate 60 shown in FIG. 3A is used instead of the electrode plate 30 of the thin film forming apparatus 10 shown in FIG. 1, plasma generated in the film formation space 40 into which monosilane gas (1.3 Pa) is introduced.
- the electron density has a value as shown in FIG.
- the electrode plate 60 is an electrode plate extending in one direction that does not have a bent portion.
- 1 kW high frequency power 13.56 to 60 MHz
- the end surface 60b is grounded. That is, as shown in FIG.
- the electron density is high on the ground side (the end face 60b side), and the electron density is low on the power feeding side (the end face 60a side).
- the plasma generated based on the magnetic field generated by the current is dominant on the ground side, whereas it is generated by the high voltage on the power supply side. This is considered to be because the plasma (plasma derived from voltage) is dominant. This is because, on the power supply side, because of the high voltage, it is considered that the energy of electrons is low and high-density plasma is difficult to be generated.
- the U-shaped electrode plate 30 by utilizing the fact that the plasma density is increased on the ground side, the U-shaped electrode plate 30 is used as shown in FIG.
- the low region and the high plasma density region on the ground side are mixed to generate an average plasma density.
- the magnetic fields generated by these currents are added at the distance d of the electrode plate 30.
- a uniform magnetic field is formed in the film formation space 40. Therefore, by using the U-shaped electrode plate 30 in which the lengths of the forward path portion 30c and the backward path portion 30d are substantially equal, the plasma density in the forward path portion 30c and the backward path portion 30d in the longitudinal direction can be averaged. And a uniform plasma density can be achieved.
- the surface layer of the current flowing through the electrode plate 30 is determined depending on the electrical resistivity of the electrode plate 30, the frequency of the flowing current, and the magnetic permeability of the electrode plate 30.
- the depth of the surface layer is about 0.1 mm.
- the thickness of the electrode plate 20 is preferably greater than 0.2 mm.
- FIG. 2B is a perspective view showing an electrode plate 56 having a different form from the electrode plate 30 shown in FIG.
- the electrode plate 56 is a long plate member through which a current flows from one end surface 56a to the other end surface 56b, and has a U shape. That is, the electrode plate 56 has an outward path portion 56c and a return path portion 56d that are bent in the middle of the longitudinal direction of the plate member and are parallel to each other.
- the electrode plate 56 is used as an electrode for plasma generation.
- the first main surface (the lower surface of the electrode plate 56 in FIG. 2B) 56e in the forward path portion 56c and the return path portion 56d of the electrode plate 56 has a certain depth and width extending in the direction of current flow.
- the electrode plate 56 has a first main surface 56e having a surface area opposite to the first main surface 56e and a second main surface (a plate surface facing the upper side of the electrode plate 56 in FIG. 2B). Large relative to the surface area of The high-frequency current flowing through the electrode plate 56 gathers on the surface layers of the first main surface 56e and the second main surface due to surface effects. However, since the first main surface 56e has a larger surface area than the second main surface, the current flowing through the surface layer of the first main surface 56e is larger than that of the second main surface.
- the magnetic field formed in the film-forming space 40 due to the current flowing through the surface layer of the first main surface 56e becomes larger than that of the electrode plate in which the recess 58 is not provided. For this reason, the plasma generated by the magnetic field is densified.
- the thin film forming apparatus 10 can generate a uniform magnetic field over a wide range, and as a result, can generate high-density plasma over a wide range.
- FIG. 4 is a perspective view of an electrode plate 62 different from the electrode plate 30 shown in FIG.
- the electrode plate 62 is U-shaped like the electrode plate 30. That is, the electrode plate 62 is bent in the middle of the plate member in the longitudinal direction, and has an outward path portion and a return path portion parallel to each other.
- the electrode plate 62 is used as an electrode for plasma generation.
- the second main surface 62b facing the first main surface 62a facing the film formation space 40 of the electrode plate 62 has a plurality of fin-shaped thin plate members 62c extending in a direction orthogonal to the X direction in which current flows. Each of the part and the return part is erected at a constant height and at a constant interval.
- the reason why the thin plate member 62c is provided on the second main surface 62b side is to increase the resistance by largely changing the cross-sectional area in the direction of current flow on the second main surface 62b side. For this reason, it becomes easy to flow an electric current through the 1st main surface 62a whose resistance is small compared with the 2nd main surface 62b. Therefore, the current flowing through the first main surface 62a can be increased, and the magnetic field formed in the film formation space 40 can be increased by the current flowing through the first main surface 62a compared to the conventional case.
- the thin plate member 62c is also effective in dissipating heat generated by current flowing through the electrode plate 62.
- the second main surface 62b of the electrode plate 62 is not limited to being provided with the thin plate member 62c, but may be provided with unevenness extending along a direction orthogonal to the direction of current flow.
- the electrode plate 62 is preferably provided with at least irregularities that increase the resistance of the current flowing through the surface layer of the second main surface 62b.
- FIG. 5 is a perspective view of an electrode plate 64 different from the electrode plate 56 shown in FIG.
- the electrode plate 64 has a U shape. That is, the electrode plate 64 is bent in the middle of the plate member in the longitudinal direction, and has an outward path portion and a return path portion parallel to each other.
- the electrode plate 64 is used as an electrode for plasma generation.
- the first main surface 64a of the electrode plate 64 has a constant depth extending in the X direction in which current flows, like the recess 58 provided in the first main surface 56e of the electrode plate 56 shown in FIG.
- a plurality of groove-shaped recesses having a height and a width are provided.
- the first main surface 64a has a larger surface area than the second main surface 64b, and the current flowing through the surface layer of the first main surface 64a is the second main surface. Larger than 64b.
- a plurality of fin-like thin plate members 64c extending in a direction orthogonal to the X direction in which current flows are provided at a constant height and a constant interval in each of the forward path portion and the return path portion. Standing up. For this reason, as in the second modification, the cross-sectional area in the direction in which the current flows changes greatly on the second main surface 64b side, so that the resistance in the second main surface 64b is large.
- the thin plate member 64c is also effective in dissipating heat generated by current flowing through the electrode plate 64.
- the second main surface 62b of the electrode plate 62 is not limited to being provided with the thin plate member 62c, but may be provided with unevenness extending along a direction orthogonal to the X direction in which the current flows.
- the electrode plate 62 is preferably provided with at least irregularities that increase the resistance of the current flowing through the surface layer of the second main surface 62b.
- the depth and width of the recess provided on the first main surface are constant, but the depth or width of the recess may vary depending on the location.
- the depth or width of the recess may be changed so that the surface area becomes large so that the current flows in the portion where the current hardly flows in the first main surface.
- the height and interval of the fin-like thin plate members are constant, but the height or interval of the thin plate members may vary depending on the location.
- the height of the thin plate member or the height of the thin plate member is increased so that the resistance of the current flowing through the surface layer of the second main surface is increased to increase the current of the first main surface.
- the interval may be changed.
- the electrode plate which is a long plate member used for generating plasma
- current flows from one end face to the other end face.
- the electrode plate has an outward path portion and a backward path portion which are bent in the middle of the longitudinal direction and are parallel to each other. For this reason, the plasma density can be made uniform.
- the thin film forming apparatus of the present invention has been described in detail above.
- the thin film forming apparatus of the present invention is not limited to the above embodiment, and various improvements and modifications may be made without departing from the gist of the present invention. Of course.
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Abstract
Description
Deposition)装置が用いられる。特に、CVD装置を用いて薄膜太陽電池に用いるアモルファスSi薄膜をガラス基板に形成するプロセスが注目されている。アモルファスSi薄膜の形成では、例えば、モノシラン(SiH4)をプラズマ化して、ガラス基板上にアモルファスSi薄膜を形成する。近年、薄膜太陽電池用パネルは大型化しており、大型のパネルに均一なアモルファスSi薄膜を形成することが望まれている。このために、プラズマCVD装置では、高密度なプラズマが均一に形成されること必要である。
当該プラズマ生成方法およびプラズマ生成装置は、複数本の高周波アンテナのうち少なくとも一部の複数本の高周波アンテナについては、順次隣り合わせて、且つ、各隣り合うもの同士が互いに向かい合った並列配置となるように設置する。さらに、この複数本の高周波アンテナは、該順次隣り合わせて、且つ、各隣り合うもの同士が互いに向かい合った並列配置となるように設置する。この高周波アンテナのそれぞれに印加する高周波電圧の位相を制御することで誘導結合プラズマにおける電子温度を制御する。
当該プラズマ生成装置は、プラズマ生成装置の開口部に高周波アンテナ導体が取り付けられた構造のため、広い範囲に亘って均一性が高いプラズマを生成することができる。
しかし、この電極板102により生成されるプラズマの密度は、アモルファスSi薄膜を形成するには十分でなく、成膜速度が遅いといった問題がある。また、複数本の高周波アンテナに高周波電力を給電することにより誘導結合型プラズマを発生させる上述の公知のプラズマ生成方法およびプラズマ生成装置についても十分なプラズマ密度を均一に生成することができないといった問題がある。
減圧状態で基板に薄膜を形成する成膜空間を備える成膜容器と、
前記成膜容器の前記成膜空間内に、薄膜用原料ガスを導入する原料ガス導入部と、
前記成膜空間において、前記薄膜用原料ガスを用いてプラズマを生成させるプラズマ電極部と、を有し、
前記プラズマ電極部は、電流が一方の端面から他方の端面に流れる板部材であって、前記板部材の電流の流れる方向が途中で屈曲して互いに並行する往路部分と復路部分を有する電極板を、プラズマ生成用電極として備える。
また、前記往路部分と前記復路部分は同じ幅を有し、前記往路部分と前記復路部分の離間距離は、前記往路部分と前記復路部分の幅の1~1.6倍である、ことが好ましい。
前記電極板の厚さは、0.2mmより大きい、ことが好ましい。
また、前記電極板の第1の主面が前記成膜空間に向くように配置され、前記第1の主面の往路部分と復路部分に、電流方向に沿って延びる溝状の凹部が複数設けられていてもよい。
また、前記電極板の第1の主面が前記成膜空間に向くように配置され、前記第1の主面と対向する第2の主面には、前記電流方向と直交する方向に沿って伸びる凹凸を備える、ことが好ましい。このとき、前記凹凸は、前記第2の主面に立設する複数の板部材により形成されることが好ましい。
図1は、本発明の一実施形態である薄膜形成装置10の構成を示す概略図である。
以下、薄膜としてアモルファスSi薄膜を形成する例を用いて、薄膜形成装置10について説明する。
薄膜形成装置10は、給電ユニット12と、成膜容器14と、ガス供給部16と、ガス排気部18と、を有する。
高周波電源22は、例えば、10~1000Wで数10MHzの高周波電力を電極板30に給電する。マッチングボックス26は、高周波ケーブル24を通して提供される電力が電極板30に効率よく供給されるように、インピーダンスを整合する。マッチングボックス26は、キャパシタおよびインダクタ等の素子を設けた公知の整合回路を備える。
マッチングボックス26から延びる伝送線28は、例えば、一定の幅を備える銅板状の伝送線路であり、電極板30へ数アンペアの電流を流すことができる。伝送線29は、電極板30から延び接地されている。
ヒータ42は、サセプタ44に載置するガラス基板20を所定の温度、例えば250℃程度に加熱する。
サセプタ44は、ガラス基板20を載置する。
昇降機構46は、ガラス基板20を載置したサセプタ44をヒータ42ともに、成膜空間40内を自在に昇降する。成膜プロセス段階では、電極板30に近接するように、ガラス基板20を所定の位置にセットする。
ガスタンク48は、薄膜用原料ガスであるモノシランガス(SiH4)を貯蔵する。
マスフローコントローラ50は、モノシランガスの流量を調整する部分である。例えば
形成される膜の膜厚や膜質等の結果に応じてモノシランガスの流量を調整することができる。モノシランガスは、成膜容器14の成膜空間40の側壁から成膜空間40内に供給される。
図2(a)は、給電ユニット12に用いられる電極板30の一例の斜視図である。
電極板30は、電流が一方の端面30aから他方の端面30bに流れる、長尺状の板部材であって、U字形状を成している。すなわち、電極板30は、その一部分が板部材の長手方向の途中で180度屈曲し、互いに並行する往路部分30cと復路部分30dを有する。電極板30は、プラズマ生成用電極として用いられる。
電極板30は、例えば、銅、アルミニウム等が用いられる。
往路部分30cにおける長さ、すなわち、端面30aから屈曲部にいたる長さと、復路部分30dにおける長さ、すなわち、屈曲部から端面30bにいたる長さとは等しいことが好ましい。これは、後述するプラズマ密度を均一するためである。
また、往路部分30cと復路部分30dは同じ幅(図中X方向の幅)を有する。往路部分30cと復路部分30dの離間距離dは、往路部分30cと復路部分30dの幅の1~1.6倍であることが、均一な磁場を生成することで均一なプラズマを生成する点で好ましい。
図1に示す薄膜形成装置10の電極板30の代わりに図3(a)に示す電極板60を用いたとき、モノシランガス(1.3Pa)を導入した成膜空間40内で生成されるプラズマの電子密度は、図3(b)に示すような値となる。
電極板60は、電極板30と異なり屈曲部を有さない一方向に伸びる電極板である。このとき、電極板60の端面60aに1kWの高周波電力(13.56~60MHz)が付与され、端面60bが接地されている。
すなわち、図3(b)に示すように、接地側(端面60bの側)では電子密度が高く、給電側(端面60aの側)では電子密度が低い。この理由については、明確ではないが、接地側では電流により生成された磁場に基づいて生成されるプラズマ(電流に由来するプラズマ)が支配的であるのに対し、給電側では高電圧によって生成されるプラズマ(電圧に由来するプラズマ)が支配的であることに起因すると考えられる。給電側では、高電圧のため、電子のエネルギが低く、高密度なプラズマが生成されにくいと考えられるからである。
図2(b)は、図2(a)に示す電極板30と異なる形態の電極板56を示す斜視図である。
電極板56は、電流が一方の端面56aから他方の端面56bに流れる、長尺状の板部材であって、U字形状を成している。すなわち、電極板56は、板部材の長手方向の途中で屈曲して互いに並行する往路部分56cと復路部分56dを有する。電極板56は、プラズマ生成用電極として用いられる。
電極板56の往路部分56c及び復路部分56dにおける第1の主面(図2(b)中の電極板56の下側の面)56eには、電流の流れる方向に延びる一定の深さ及び幅を有する溝状の凹部58を複数備える。このため、電極板56は、第1の主面56eの表面積が第1の主面56eと反対側の第2の主面(図2(b)中の電極板56の上側に向く板面)の表面積に対して大きい。電極板56を流れる高周波の電流は表面効果により、第1の主面56e,第2の主面の表層に集まる。しかし、第1の主面56eは、第2の主面に比べて表面積が大きいので、第1の主面56eの表層を流れる電流は、第2の主面に比べて大きい。このため、第1の主面56eの表層を流れる電流により、成膜空間40内に形成される磁場は、凹部58が設けられていない電極板に比べて大きくなる。このため、磁場により生成されるプラズマは高密度化される。しかも、電極板56を用いて磁場を生成するので、薄膜形成装置10は広範囲に均一な磁場を生成することができ、その結果、広範囲に高密度のプラズマを生成することができる。
図4は、図2(a)に示される電極板30とは異なる電極板62の斜視図である。電極板62は、電極板30と同様にU字形状を成している。すなわち、電極板62は、板部材の長手方向の途中で屈曲し、互いに並行する往路部分と復路部分を有する。電極板62は、プラズマ生成用電極として用いられる。
電極板62の成膜空間40に向く第1の主面62aと対向する第2の主面62bは、電流が流れるX方向に対して直交する方向に延びる複数のフィン状の薄板部材62cが往路部分と復路部分のそれぞれに一定の高さで一定の間隔で立設している。第2の主面62bの側に薄板部材62cを設けるのは、電流の流れる方向の断面積を第2の主面62bの側で大きく変化させることにより、抵抗を大きくするためである。このため、第2の主表面62bに比べて抵抗が小さい第1の主面62aに電流が流れ易くなる。したがって、第1の主面62aに流れる電流を大きくし、第1の主面62aに流れる電流により、成膜空間40内に形成される磁場を、従来に比べて大きくすることができる。
また、薄板部材62cは、電極板62を電流が流れることにより発生する熱を放熱する点でも有効である。なお、電極板62の第2の主面62bには、薄板部材62cが設けられることに限定されず、電流の流れる方向と直交する方向に沿って伸びる凹凸を備えればよい。電極板62には、少なくとも、第2の主面62bの表層を流れる電流の抵抗を大きくするような凹凸が設けられるとよい。
図5は、図2(b)に示される電極板56とは異なる電極板64の斜視図である。電極板64は、電極板56と同様にU字形状を成している。すなわち、電極板64は、板部材の長手方向の途中で屈曲し、互いに並行する往路部分と復路部分を有する。電極板64は、プラズマ生成用電極として用いられる。
電極板64の第1の主面64aは、図2(b)に示される電極板56の第1の主面56eに設けられる凹部58と同様に、電流の流れるX方向に延びる、一定の深さ及び幅を有する溝状の複数の凹部を備える。このため、第1変形例と同様に、第1の主面64aは、第2の主面64bに比べて表面積が大きく、第1の主面64aの表層を流れる電流は、第2の主面64bに比べて大きい。一方、第2の主面64bには、電流が流れるX方向に対して直交する方向に延びる複数のフィン状の薄板部材64cが往路部分と復路部分のそれぞれに一定の高さで一定の間隔で立設している。このため、第2変形例と同様に、電流の流れる方向の断面積が第2の主面64bの側で大きく変化するので、第2の主面64bにおける抵抗を大きい。このため、第1の主面64aの表面積の効果と合わせてより一層第1の主面64aに電流が流れやすくなる。したがって、第1の主面64aに流れる電流を大きくすることにより、成膜空間40内に形成される磁場を、従来に比べて大きくすることができる。
また、薄板部材64cは、電極板64を電流が流れることにより発生する熱を放熱する点でも有効である。なお、電極板62の第2の主面62bには、薄板部材62cが設けられることに限定されず、電流の流れるX方向と直交する方向に沿って伸びる凹凸を備えればよい。電極板62には、少なくとも、第2の主面62bの表層を流れる電流の抵抗を大きくするような凹凸が設けられるとよい。
上記第2変形例及び第3変形例では、フィン状の薄板部材の高さ及び間隔は一定であるが、薄板部材の高さあるいは間隔は場所によって異なってもよい。例えば、第1の主面において電流が流れにくい部分では、第2の主面の表層を流れる電流の抵抗を大きくして第1の主面の電流が増大するように、薄板部材の高さあるいは間隔を変化させてもよい。
12 給電ユニット
14,104 成膜容器
16 ガス供給部
18 ガス排気部
20 ガラス基板
22 高周波電源
24 高周波ケーブル
26 マッチングボックス
28,29 伝送線
30,56,60,62,64,102 電極板
30a,30b,56a,56b,60a,60b 端面
30c、56c 往路部分
30d,56d 復路部分
32,106 隔壁
34 絶縁部材
36,108 誘電体
38 内部空間
40 成膜空間
42,110 ヒータ
44,112 サセプタ
46 昇降機構
48 ガスタンク
50 マスフローコントローラ
52 ターボ分子ポンプ
54 ドライポンプ
58 凹部
56e,62a,64a 第1の主面
62b,64b 第2の主面
62c,64c 薄板部材
100 プラズマ成膜装置
Claims (7)
- 基板に薄膜を形成する薄膜形成装置であって、
減圧状態で基板に薄膜を形成する成膜空間を備える成膜容器と、
前記成膜容器の前記成膜空間内に、薄膜用原料ガスを導入する原料ガス導入部と、
前記成膜空間において、前記薄膜用原料ガスを用いてプラズマを生成させるプラズマ電極部と、を有し、
前記プラズマ電極部は、電流が一方の端面から他方の端面に流れる板部材であって、前記板部材の電流の流れる方向が途中で屈曲して互いに並行する往路部分と復路部分を有する電極板を、プラズマ生成用電極として備える、ことを特徴とする薄膜形成装置。 - 前記往路部分の長さと前記復路部分の復路部分の長さは等しい、請求項1に記載の薄膜形成装置。
- 前記往路部分と前記復路部分は同じ幅を有し、
前記往路部分と前記復路部分の離間距離は、前記往路部分と前記復路部分の幅の1~1.6倍である、請求項1または2に記載の薄膜形成装置。 - 前記電極板の厚さは、0.2mmよりおおきい、請求項1~3のいずれか1項に記載の薄膜形成装置。
- 前記電極板の第1の主面が前記成膜空間に向くように配置され、前記第1の主面の往路部分と復路部分に、電流方向に沿って延びる溝状の凹部が複数設けられている、請求項1~4のいずれか1項に記載の薄膜形成装置。
- 前記電極板の第1の主面が前記成膜空間に向くように配置され、
前記第1の主面と対向する第2の主面には、前記電流方向と直交する方向に沿って伸びる凹凸を備える、請求項1~5のいずれか1項に記載の薄膜形成装置。 - 前記凹凸は、前記第2の主面に立設する複数の板部材により形成される、請求項6に記載の薄膜形成装置。
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- 2011-02-21 US US13/582,616 patent/US20130104803A1/en not_active Abandoned
- 2011-02-21 EP EP11750333.4A patent/EP2544223A4/en not_active Withdrawn
- 2011-02-21 JP JP2011508147A patent/JP4818483B2/ja not_active Expired - Fee Related
- 2011-02-21 KR KR20127016617A patent/KR20120120181A/ko not_active Application Discontinuation
- 2011-03-01 TW TW100106707A patent/TWI524387B/zh not_active IP Right Cessation
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EP2592644A3 (en) * | 2011-11-09 | 2016-01-06 | Nissin Electric Co., Ltd. | Plasma processing apparatus |
JP2013201157A (ja) * | 2012-03-23 | 2013-10-03 | Mitsui Eng & Shipbuild Co Ltd | プラズマ処理装置 |
Also Published As
Publication number | Publication date |
---|---|
EP2544223A1 (en) | 2013-01-09 |
EP2544223A4 (en) | 2013-08-14 |
JPWO2011108219A1 (ja) | 2013-06-20 |
TWI524387B (zh) | 2016-03-01 |
TW201209888A (en) | 2012-03-01 |
US20130104803A1 (en) | 2013-05-02 |
KR20120120181A (ko) | 2012-11-01 |
JP4818483B2 (ja) | 2011-11-16 |
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