KR101369993B1 - 낮은 에너지를 가지며 많은 양의 비소, 인, 및 붕소 주입된 웨이퍼의 안전한 핸들링 - Google Patents

낮은 에너지를 가지며 많은 양의 비소, 인, 및 붕소 주입된 웨이퍼의 안전한 핸들링 Download PDF

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KR101369993B1
KR101369993B1 KR1020097015192A KR20097015192A KR101369993B1 KR 101369993 B1 KR101369993 B1 KR 101369993B1 KR 1020097015192 A KR1020097015192 A KR 1020097015192A KR 20097015192 A KR20097015192 A KR 20097015192A KR 101369993 B1 KR101369993 B1 KR 101369993B1
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South Korea
Prior art keywords
dopant
film
layer
exposing
substrate processing
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Korean (ko)
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KR20090100421A (ko
Inventor
마지드 에이. 포드
마노지 벨라이칼
카르티크 산타남
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/94—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H10P32/1204—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase from a plasma phase

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
KR1020097015192A 2006-12-18 2007-12-18 낮은 에너지를 가지며 많은 양의 비소, 인, 및 붕소 주입된 웨이퍼의 안전한 핸들링 Expired - Fee Related KR101369993B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US87057506P 2006-12-18 2006-12-18
US60/870,575 2006-12-18
PCT/US2007/087894 WO2008077020A2 (en) 2006-12-18 2007-12-18 Safe handling of low energy, high dose arsenic, phosphorus, and boron implanted wafers

Publications (2)

Publication Number Publication Date
KR20090100421A KR20090100421A (ko) 2009-09-23
KR101369993B1 true KR101369993B1 (ko) 2014-03-06

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KR1020097015192A Expired - Fee Related KR101369993B1 (ko) 2006-12-18 2007-12-18 낮은 에너지를 가지며 많은 양의 비소, 인, 및 붕소 주입된 웨이퍼의 안전한 핸들링

Country Status (6)

Country Link
US (3) US20080153271A1 (enExample)
JP (1) JP5383501B2 (enExample)
KR (1) KR101369993B1 (enExample)
CN (1) CN101548190A (enExample)
TW (1) TWI508142B (enExample)
WO (1) WO2008077020A2 (enExample)

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JP2012507867A (ja) * 2008-10-31 2012-03-29 アプライド マテリアルズ インコーポレイテッド Ｐ３ｉプロセスにおけるドーピングプロファイルの調整
US7858503B2 (en) * 2009-02-06 2010-12-28 Applied Materials, Inc. Ion implanted substrate having capping layer and method
TW201205648A (en) * 2010-06-23 2012-02-01 Tokyo Electron Ltd Plasma doping device, plasma doping method, method for manufacturing semiconductor element, and semiconductor element
US8501605B2 (en) * 2011-03-14 2013-08-06 Applied Materials, Inc. Methods and apparatus for conformal doping
US20120289036A1 (en) * 2011-05-11 2012-11-15 Applied Materials, Inc. Surface dose retention of dopants by pre-amorphization and post implant passivation treatments
WO2013164940A1 (ja) * 2012-05-01 2013-11-07 東京エレクトロン株式会社 被処理基体にドーパントを注入する方法、及びプラズマドーピング装置
EP3149011A4 (en) 2014-05-30 2018-06-13 Dow Corning Corporation Process of synthesizing diisopropylaminw-disilanes
FR3033079B1 (fr) * 2015-02-19 2018-04-27 Ion Beam Services Procede de passivation d'un substrat et machine pour la mise en oeuvre de ce procede
WO2018052471A1 (en) * 2016-09-14 2018-03-22 Applied Materials, Inc. A degassing chamber for arsenic related processes
US11501972B2 (en) * 2020-07-22 2022-11-15 Applied Materials, Inc. Sacrificial capping layer for passivation using plasma-based implant process
US12494251B2 (en) * 2022-08-26 2025-12-09 Micron Technology, Inc. Memory circuitry and method used in forming memory circuitry

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Also Published As

Publication number Publication date
JP2010514166A (ja) 2010-04-30
TWI508142B (zh) 2015-11-11
US20080153271A1 (en) 2008-06-26
JP5383501B2 (ja) 2014-01-08
US8927400B2 (en) 2015-01-06
TW200834681A (en) 2008-08-16
US20100173484A1 (en) 2010-07-08
WO2008077020A3 (en) 2008-08-28
KR20090100421A (ko) 2009-09-23
WO2008077020A2 (en) 2008-06-26
CN101548190A (zh) 2009-09-30
US20140248759A1 (en) 2014-09-04

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