CN101548190A - 低能量、高剂量砷、磷与硼注入晶片的安全处理 - Google Patents

低能量、高剂量砷、磷与硼注入晶片的安全处理 Download PDF

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Publication number
CN101548190A
CN101548190A CNA2007800445412A CN200780044541A CN101548190A CN 101548190 A CN101548190 A CN 101548190A CN A2007800445412 A CNA2007800445412 A CN A2007800445412A CN 200780044541 A CN200780044541 A CN 200780044541A CN 101548190 A CN101548190 A CN 101548190A
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CN
China
Prior art keywords
rete
exposed
electricity slurry
layer
oxygen
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Pending
Application number
CNA2007800445412A
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English (en)
Chinese (zh)
Inventor
马耶德·A·福阿德
麦诺基·韦列卡
卡提克·桑瑟南姆
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Applied Materials Inc
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Applied Materials Inc
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Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN101548190A publication Critical patent/CN101548190A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/94—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H10P32/1204—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase from a plasma phase

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
CNA2007800445412A 2006-12-18 2007-12-18 低能量、高剂量砷、磷与硼注入晶片的安全处理 Pending CN101548190A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US87057506P 2006-12-18 2006-12-18
US60/870,575 2006-12-18

Publications (1)

Publication Number Publication Date
CN101548190A true CN101548190A (zh) 2009-09-30

Family

ID=39537046

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007800445412A Pending CN101548190A (zh) 2006-12-18 2007-12-18 低能量、高剂量砷、磷与硼注入晶片的安全处理

Country Status (6)

Country Link
US (3) US20080153271A1 (enExample)
JP (1) JP5383501B2 (enExample)
KR (1) KR101369993B1 (enExample)
CN (1) CN101548190A (enExample)
TW (1) TWI508142B (enExample)
WO (1) WO2008077020A2 (enExample)

Cited By (2)

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CN107408496A (zh) * 2015-02-19 2017-11-28 离子射线服务公司 衬底稳定化方法及实施这种方法的机器
TWI745387B (zh) * 2016-09-14 2021-11-11 美商應用材料股份有限公司 用於砷相關處理的除氣腔室

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JP2012507867A (ja) * 2008-10-31 2012-03-29 アプライド マテリアルズ インコーポレイテッド Ｐ３ｉプロセスにおけるドーピングプロファイルの調整
US7858503B2 (en) * 2009-02-06 2010-12-28 Applied Materials, Inc. Ion implanted substrate having capping layer and method
TW201205648A (en) * 2010-06-23 2012-02-01 Tokyo Electron Ltd Plasma doping device, plasma doping method, method for manufacturing semiconductor element, and semiconductor element
US8501605B2 (en) * 2011-03-14 2013-08-06 Applied Materials, Inc. Methods and apparatus for conformal doping
US20120289036A1 (en) * 2011-05-11 2012-11-15 Applied Materials, Inc. Surface dose retention of dopants by pre-amorphization and post implant passivation treatments
WO2013164940A1 (ja) * 2012-05-01 2013-11-07 東京エレクトロン株式会社 被処理基体にドーパントを注入する方法、及びプラズマドーピング装置
EP3149011A4 (en) 2014-05-30 2018-06-13 Dow Corning Corporation Process of synthesizing diisopropylaminw-disilanes
US11501972B2 (en) * 2020-07-22 2022-11-15 Applied Materials, Inc. Sacrificial capping layer for passivation using plasma-based implant process
US12494251B2 (en) * 2022-08-26 2025-12-09 Micron Technology, Inc. Memory circuitry and method used in forming memory circuitry

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CN107408496A (zh) * 2015-02-19 2017-11-28 离子射线服务公司 衬底稳定化方法及实施这种方法的机器
TWI745387B (zh) * 2016-09-14 2021-11-11 美商應用材料股份有限公司 用於砷相關處理的除氣腔室
US11649559B2 (en) 2016-09-14 2023-05-16 Applied Materials, Inc. Method of utilizing a degassing chamber to reduce arsenic outgassing following deposition of arsenic-containing material on a substrate

Also Published As

Publication number Publication date
JP2010514166A (ja) 2010-04-30
TWI508142B (zh) 2015-11-11
US20080153271A1 (en) 2008-06-26
JP5383501B2 (ja) 2014-01-08
KR101369993B1 (ko) 2014-03-06
US8927400B2 (en) 2015-01-06
TW200834681A (en) 2008-08-16
US20100173484A1 (en) 2010-07-08
WO2008077020A3 (en) 2008-08-28
KR20090100421A (ko) 2009-09-23
WO2008077020A2 (en) 2008-06-26
US20140248759A1 (en) 2014-09-04

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