JP2015526897A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2015526897A5 JP2015526897A5 JP2015522156A JP2015522156A JP2015526897A5 JP 2015526897 A5 JP2015526897 A5 JP 2015526897A5 JP 2015522156 A JP2015522156 A JP 2015522156A JP 2015522156 A JP2015522156 A JP 2015522156A JP 2015526897 A5 JP2015526897 A5 JP 2015526897A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- subassembly
- gas
- treatment
- generating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1257037 | 2012-07-20 | ||
| FR1257037A FR2993576B1 (fr) | 2012-07-20 | 2012-07-20 | Dispositif de traitement d'un objet par plasma |
| PCT/FR2013/051768 WO2014013209A1 (fr) | 2012-07-20 | 2013-07-22 | Dispositif de traitement d'un objet par plasma |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015526897A JP2015526897A (ja) | 2015-09-10 |
| JP2015526897A5 true JP2015526897A5 (enExample) | 2016-08-04 |
| JP6298814B2 JP6298814B2 (ja) | 2018-03-20 |
Family
ID=47227933
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015522156A Active JP6298814B2 (ja) | 2012-07-20 | 2013-07-22 | プラズマを用いて物体を処理する装置 |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US20150243485A1 (enExample) |
| EP (1) | EP2875517B1 (enExample) |
| JP (1) | JP6298814B2 (enExample) |
| KR (1) | KR102060671B1 (enExample) |
| CN (1) | CN104685605B (enExample) |
| FR (1) | FR2993576B1 (enExample) |
| SG (1) | SG11201500389UA (enExample) |
| TW (1) | TWI601181B (enExample) |
| WO (1) | WO2014013209A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9378975B2 (en) | 2014-02-10 | 2016-06-28 | Tokyo Electron Limited | Etching method to form spacers having multiple film layers |
| KR20190038945A (ko) * | 2016-08-29 | 2019-04-09 | 도쿄엘렉트론가부시키가이샤 | 실리콘 질화물의 준원자 층 에칭 방법 |
| JP6836953B2 (ja) * | 2016-12-13 | 2021-03-03 | 東京エレクトロン株式会社 | 窒化シリコンから形成された第１領域を酸化シリコンから形成された第２領域に対して選択的にエッチングする方法 |
| KR102537097B1 (ko) | 2017-02-23 | 2023-05-25 | 도쿄엘렉트론가부시키가이샤 | 실리콘 질화물의 유사 원자층 에칭 방법 |
| TWI761461B (zh) | 2017-02-23 | 2022-04-21 | 日商東京威力科創股份有限公司 | 用於製造自對準塊體結構之矽氮化物心軸的異向性抽出方法 |
| KR102440367B1 (ko) * | 2017-06-22 | 2022-09-05 | 삼성전자주식회사 | Rps를 이용한 식각 방법 및 그 식각 방법을 포함한 반도체 소자 제조방법 |
| US10607852B2 (en) * | 2017-09-13 | 2020-03-31 | Tokyo Electron Limited | Selective nitride etching method for self-aligned multiple patterning |
| US10658192B2 (en) * | 2017-09-13 | 2020-05-19 | Tokyo Electron Limited | Selective oxide etching method for self-aligned multiple patterning |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5273609A (en) * | 1990-09-12 | 1993-12-28 | Texas Instruments Incorporated | Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment |
| US5296272A (en) * | 1990-10-10 | 1994-03-22 | Hughes Aircraft Company | Method of implanting ions from a plasma into an object |
| JP3752468B2 (ja) * | 1991-04-04 | 2006-03-08 | 株式会社日立製作所 | 半導体装置の製造方法 |
| JP4654176B2 (ja) * | 1996-02-22 | 2011-03-16 | 住友精密工業株式会社 | 誘導結合プラズマ・リアクタ |
| US6267074B1 (en) * | 1997-02-24 | 2001-07-31 | Foi Corporation | Plasma treatment systems |
| JP2002503031A (ja) * | 1998-02-09 | 2002-01-29 | アプライド マテリアルズ インコーポレイテッド | 種密度を個別制御するプラズマアシスト処理チャンバ |
| US6051073A (en) * | 1998-02-11 | 2000-04-18 | Silicon Genesis Corporation | Perforated shield for plasma immersion ion implantation |
| US20010002584A1 (en) * | 1998-12-01 | 2001-06-07 | Wei Liu | Enhanced plasma mode and system for plasma immersion ion implantation |
| US20060124588A1 (en) * | 1999-01-05 | 2006-06-15 | Berg & Berg Enterprises, Llc | System and method for reducing metal oxides with hydrogen radicals |
| JP2002100623A (ja) * | 2000-09-20 | 2002-04-05 | Fuji Daiichi Seisakusho:Kk | 薄膜半導体製造装置 |
| JP2004265627A (ja) * | 2003-02-14 | 2004-09-24 | Masato Toshima | プラズマ発生装置およびプラズマエッチング装置 |
| US20060276043A1 (en) * | 2003-03-21 | 2006-12-07 | Johnson Mark A L | Method and systems for single- or multi-period edge definition lithography |
| AT412719B (de) * | 2003-06-16 | 2005-06-27 | Eckelt Glas Gmbh | Verfahren und vorrichtung zum bereichsweisen entschichten von glasscheiben |
| US7015415B2 (en) * | 2004-02-18 | 2006-03-21 | Dry Plasma Systems, Inc. | Higher power density downstream plasma |
| TWI349042B (en) * | 2006-02-09 | 2011-09-21 | Sputtering system providing large area sputtering and plasma-assisted reactive gas dissociation | |
| KR100799175B1 (ko) * | 2006-04-21 | 2008-02-01 | 주식회사 뉴파워 프라즈마 | 플라즈마 프로세싱 시스템 및 그 제어 방법 |
| EP1936656A1 (en) * | 2006-12-21 | 2008-06-25 | Nederlandse Organisatie voor Toegepast-Natuuurwetenschappelijk Onderzoek TNO | Plasma generator and method for cleaning an object |
| US7976674B2 (en) * | 2007-06-13 | 2011-07-12 | Tokyo Electron Limited | Embedded multi-inductive large area plasma source |
| CN201228282Y (zh) * | 2007-12-24 | 2009-04-29 | 杨思泽 | 脉冲高能量密度等离子体辅助多源复合材料表面改性装置 |
| JP5214261B2 (ja) * | 2008-01-25 | 2013-06-19 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US20090286397A1 (en) * | 2008-05-15 | 2009-11-19 | Lam Research Corporation | Selective inductive double patterning |
| US8207470B2 (en) * | 2008-10-20 | 2012-06-26 | Industry-University Cooperation Foundation Hanyang University | Apparatus for generating remote plasma |
| JP2010161350A (ja) * | 2008-12-09 | 2010-07-22 | Hitachi Kokusai Electric Inc | 基板処理方法 |
| CN102110650A (zh) * | 2009-12-29 | 2011-06-29 | 中国科学院微电子研究所 | 一种半导体器件及其制造方法 |
| US8574447B2 (en) * | 2010-03-31 | 2013-11-05 | Lam Research Corporation | Inorganic rapid alternating process for silicon etch |
| US9155181B2 (en) * | 2010-08-06 | 2015-10-06 | Lam Research Corporation | Distributed multi-zone plasma source systems, methods and apparatus |
-
2012
- 2012-07-20 FR FR1257037A patent/FR2993576B1/fr active Active
-
2013
- 2013-07-22 US US14/415,976 patent/US20150243485A1/en not_active Abandoned
- 2013-07-22 WO PCT/FR2013/051768 patent/WO2014013209A1/fr not_active Ceased
- 2013-07-22 KR KR1020157004383A patent/KR102060671B1/ko active Active
- 2013-07-22 SG SG11201500389UA patent/SG11201500389UA/en unknown
- 2013-07-22 EP EP13756581.8A patent/EP2875517B1/fr active Active
- 2013-07-22 JP JP2015522156A patent/JP6298814B2/ja active Active
- 2013-07-22 TW TW102126199A patent/TWI601181B/zh active
- 2013-07-22 CN CN201380038733.8A patent/CN104685605B/zh active Active
-
2018
- 2018-01-13 US US15/870,890 patent/US11075057B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2015526897A5 (enExample) | ||
| JP6890550B2 (ja) | 高アスペクト比ビアの洗浄 | |
| TWI704635B (zh) | 增進製程均勻性的方法及系統 | |
| TWI660420B (zh) | 使用遠端電漿源之加強式蝕刻製程 | |
| CN107430992B (zh) | 用于膜沉积的脉冲化等离子体 | |
| JP6290544B2 (ja) | 二酸化珪素フィルムを付着させる方法 | |
| CN106133884A (zh) | 无卤素气相硅蚀刻 | |
| JP2014017406A5 (enExample) | ||
| JP2011515855A5 (enExample) | ||
| TW200737345A (en) | Method and system for selectively etching a dielectric material relative to silicon | |
| TW200629336A (en) | Semiconductor plasma-processing apparatus and method | |
| CN103137415B (zh) | 半导体制造装置及半导体制造方法 | |
| JP2014504805A5 (enExample) | ||
| TW201913802A (zh) | 蝕刻方法及蝕刻裝置 | |
| US11075057B2 (en) | Device for treating an object with plasma | |
| JP2014045063A5 (enExample) | ||
| TW200839875A (en) | Multilayer silicon nitride deposition for a semiconductor device | |
| CN102985240A (zh) | 微孔的产生 | |
| JPWO2020110192A1 (ja) | プラズマ処理装置及びそれを用いた試料の処理方法 | |
| JP2019504467A5 (enExample) | ||
| JP2017118091A5 (enExample) | ||
| JP2019192733A5 (enExample) | ||
| KR101702869B1 (ko) | 원자층 식각장치 | |
| TWI727183B (zh) | 清潔製程腔室的方法 | |
| US10418250B2 (en) | Etching method using remote plasma source, and method of fabricating semiconductor device including the etching method |