KR102060671B1 - 플라즈마를 이용한 객체 처리 장치 - Google Patents

플라즈마를 이용한 객체 처리 장치 Download PDF

Info

Publication number
KR102060671B1
KR102060671B1 KR1020157004383A KR20157004383A KR102060671B1 KR 102060671 B1 KR102060671 B1 KR 102060671B1 KR 1020157004383 A KR1020157004383 A KR 1020157004383A KR 20157004383 A KR20157004383 A KR 20157004383A KR 102060671 B1 KR102060671 B1 KR 102060671B1
Authority
KR
South Korea
Prior art keywords
plasma
subassembly
subassemblies
gas
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020157004383A
Other languages
English (en)
Korean (ko)
Other versions
KR20150038172A (ko
Inventor
질 보종
엠마뉴엘 기도띠
야닉 삐우
빠트릭 라빈존
줄리앙 리샤르
마크 세제르
뱅썽 지롤트
Original Assignee
나노플라
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 나노플라 filed Critical 나노플라
Publication of KR20150038172A publication Critical patent/KR20150038172A/ko
Application granted granted Critical
Publication of KR102060671B1 publication Critical patent/KR102060671B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32403—Treating multiple sides of workpieces, e.g. 3D workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
KR1020157004383A 2012-07-20 2013-07-22 플라즈마를 이용한 객체 처리 장치 Active KR102060671B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1257037 2012-07-20
FR1257037A FR2993576B1 (fr) 2012-07-20 2012-07-20 Dispositif de traitement d'un objet par plasma
PCT/FR2013/051768 WO2014013209A1 (fr) 2012-07-20 2013-07-22 Dispositif de traitement d'un objet par plasma

Publications (2)

Publication Number Publication Date
KR20150038172A KR20150038172A (ko) 2015-04-08
KR102060671B1 true KR102060671B1 (ko) 2019-12-30

Family

ID=47227933

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157004383A Active KR102060671B1 (ko) 2012-07-20 2013-07-22 플라즈마를 이용한 객체 처리 장치

Country Status (9)

Country Link
US (2) US20150243485A1 (enExample)
EP (1) EP2875517B1 (enExample)
JP (1) JP6298814B2 (enExample)
KR (1) KR102060671B1 (enExample)
CN (1) CN104685605B (enExample)
FR (1) FR2993576B1 (enExample)
SG (1) SG11201500389UA (enExample)
TW (1) TWI601181B (enExample)
WO (1) WO2014013209A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9378975B2 (en) 2014-02-10 2016-06-28 Tokyo Electron Limited Etching method to form spacers having multiple film layers
KR20190038945A (ko) * 2016-08-29 2019-04-09 도쿄엘렉트론가부시키가이샤 실리콘 질화물의 준원자 층 에칭 방법
JP6836953B2 (ja) * 2016-12-13 2021-03-03 東京エレクトロン株式会社 窒化シリコンから形成された第１領域を酸化シリコンから形成された第２領域に対して選択的にエッチングする方法
KR102537097B1 (ko) 2017-02-23 2023-05-25 도쿄엘렉트론가부시키가이샤 실리콘 질화물의 유사 원자층 에칭 방법
TWI761461B (zh) 2017-02-23 2022-04-21 日商東京威力科創股份有限公司 用於製造自對準塊體結構之矽氮化物心軸的異向性抽出方法
KR102440367B1 (ko) * 2017-06-22 2022-09-05 삼성전자주식회사 Rps를 이용한 식각 방법 및 그 식각 방법을 포함한 반도체 소자 제조방법
US10607852B2 (en) * 2017-09-13 2020-03-31 Tokyo Electron Limited Selective nitride etching method for self-aligned multiple patterning
US10658192B2 (en) * 2017-09-13 2020-05-19 Tokyo Electron Limited Selective oxide etching method for self-aligned multiple patterning

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070090092A1 (en) 2003-06-16 2007-04-26 Saint-Gobain Glass France Method and device for removing layers in some areas of glass plates
US20070181421A1 (en) * 2006-02-09 2007-08-09 Industrial Technology Research Institute Sputtering system providing large area sputtering and plasma-assisted reactive gas dissociation
US20100059085A1 (en) * 2006-12-21 2010-03-11 Nederlandse Organisatie Voor Toegepast-Natuurweten Plasma generator and method for cleaning an object

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5273609A (en) * 1990-09-12 1993-12-28 Texas Instruments Incorporated Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment
US5296272A (en) * 1990-10-10 1994-03-22 Hughes Aircraft Company Method of implanting ions from a plasma into an object
JP3752468B2 (ja) * 1991-04-04 2006-03-08 株式会社日立製作所 半導体装置の製造方法
JP4654176B2 (ja) * 1996-02-22 2011-03-16 住友精密工業株式会社 誘導結合プラズマ・リアクタ
US6267074B1 (en) * 1997-02-24 2001-07-31 Foi Corporation Plasma treatment systems
JP2002503031A (ja) * 1998-02-09 2002-01-29 アプライド マテリアルズ インコーポレイテッド 種密度を個別制御するプラズマアシスト処理チャンバ
US6051073A (en) * 1998-02-11 2000-04-18 Silicon Genesis Corporation Perforated shield for plasma immersion ion implantation
US20010002584A1 (en) * 1998-12-01 2001-06-07 Wei Liu Enhanced plasma mode and system for plasma immersion ion implantation
US20060124588A1 (en) * 1999-01-05 2006-06-15 Berg & Berg Enterprises, Llc System and method for reducing metal oxides with hydrogen radicals
JP2002100623A (ja) * 2000-09-20 2002-04-05 Fuji Daiichi Seisakusho:Kk 薄膜半導体製造装置
JP2004265627A (ja) * 2003-02-14 2004-09-24 Masato Toshima プラズマ発生装置およびプラズマエッチング装置
US20060276043A1 (en) * 2003-03-21 2006-12-07 Johnson Mark A L Method and systems for single- or multi-period edge definition lithography
US7015415B2 (en) * 2004-02-18 2006-03-21 Dry Plasma Systems, Inc. Higher power density downstream plasma
KR100799175B1 (ko) * 2006-04-21 2008-02-01 주식회사 뉴파워 프라즈마 플라즈마 프로세싱 시스템 및 그 제어 방법
US7976674B2 (en) * 2007-06-13 2011-07-12 Tokyo Electron Limited Embedded multi-inductive large area plasma source
CN201228282Y (zh) * 2007-12-24 2009-04-29 杨思泽 脉冲高能量密度等离子体辅助多源复合材料表面改性装置
JP5214261B2 (ja) * 2008-01-25 2013-06-19 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US20090286397A1 (en) * 2008-05-15 2009-11-19 Lam Research Corporation Selective inductive double patterning
US8207470B2 (en) * 2008-10-20 2012-06-26 Industry-University Cooperation Foundation Hanyang University Apparatus for generating remote plasma
JP2010161350A (ja) * 2008-12-09 2010-07-22 Hitachi Kokusai Electric Inc 基板処理方法
CN102110650A (zh) * 2009-12-29 2011-06-29 中国科学院微电子研究所 一种半导体器件及其制造方法
US8574447B2 (en) * 2010-03-31 2013-11-05 Lam Research Corporation Inorganic rapid alternating process for silicon etch
US9155181B2 (en) * 2010-08-06 2015-10-06 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070090092A1 (en) 2003-06-16 2007-04-26 Saint-Gobain Glass France Method and device for removing layers in some areas of glass plates
US20070181421A1 (en) * 2006-02-09 2007-08-09 Industrial Technology Research Institute Sputtering system providing large area sputtering and plasma-assisted reactive gas dissociation
US20100059085A1 (en) * 2006-12-21 2010-03-11 Nederlandse Organisatie Voor Toegepast-Natuurweten Plasma generator and method for cleaning an object

Also Published As

Publication number Publication date
TW201415520A (zh) 2014-04-16
TWI601181B (zh) 2017-10-01
EP2875517A1 (fr) 2015-05-27
KR20150038172A (ko) 2015-04-08
JP6298814B2 (ja) 2018-03-20
US20150243485A1 (en) 2015-08-27
SG11201500389UA (en) 2015-03-30
FR2993576A1 (fr) 2014-01-24
FR2993576B1 (fr) 2018-05-18
WO2014013209A1 (fr) 2014-01-23
US11075057B2 (en) 2021-07-27
US20180158651A1 (en) 2018-06-07
JP2015526897A (ja) 2015-09-10
EP2875517B1 (fr) 2020-05-27
CN104685605A (zh) 2015-06-03
CN104685605B (zh) 2017-05-17

Similar Documents

Publication Publication Date Title
KR102060671B1 (ko) 플라즈마를 이용한 객체 처리 장치
TWI621186B (zh) 在增大的電漿處理系統中之電漿加強蝕刻
KR102402866B1 (ko) 고 종횡비의 구조체들의 콘택 세정
CN107924838B (zh) 处理衬底的装置与系统及蚀刻衬底的方法
KR102510737B1 (ko) 원자층 에칭 방법
KR101164829B1 (ko) 일 세트의 플라즈마 처리 단계를 튜닝하는 방법 및 장치
US8497213B2 (en) Plasma processing method
CN105706216A (zh) 用于利用气体脉冲进行深硅蚀刻的方法
KR101679371B1 (ko) 드라이 에칭 방법
US20160358784A1 (en) Plasma-enhanced etching in an augmented plasma processing system
KR102638568B1 (ko) 조정 가능한 원격 해리
WO2009070562A1 (en) Plasma control using dual cathode frequency mixing
KR20200141518A (ko) 낮은 종횡비 적층물의 패터닝을 위한 방법 및 시스템
CN111937114B (zh) 用于在加工等离子体时控制离子能量分布的装置和方法
Pu Plasma etch equipment
US10170329B2 (en) Spacer formation for self-aligned multi-patterning technique
JP2005123550A (ja) 異方性エッチング方法
KR102700803B1 (ko) 탄소 기반 막의 공간적으로 선택적인 애싱 (ashing) 을 사용하여 증착 유도된 CD 불균형을 개선하는 방법
JP2010267670A (ja) プラズマ処理方法
WO2025216868A1 (en) Silicon oxide etch with nitrogen containing etch component
KR101450757B1 (ko) 이종 플라즈마 다중 연결을 이용한 플라즈마 공정 장치 및 이를 이용한 방법
Fukumoto Model Analysis of Plasma-Surface Interactions during Silicon Oxide Etching in Fluorocarbon Plasmas

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20150217

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20180614

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20190524

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20191022

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20191223

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20191224

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20231214

Start annual number: 5

End annual number: 5