JP6298814B2 - プラズマを用いて物体を処理する装置 - Google Patents

プラズマを用いて物体を処理する装置 Download PDF

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Publication number
JP6298814B2
JP6298814B2 JP2015522156A JP2015522156A JP6298814B2 JP 6298814 B2 JP6298814 B2 JP 6298814B2 JP 2015522156 A JP2015522156 A JP 2015522156A JP 2015522156 A JP2015522156 A JP 2015522156A JP 6298814 B2 JP6298814 B2 JP 6298814B2
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Japan
Prior art keywords
plasma
subassembly
treatment
gas
processing
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English (en)
Japanese (ja)
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JP2015526897A5 (enExample
JP2015526897A (ja
Inventor
バウジョン，ジル
グイドッティ，エマニュエル
ピロックス，ヤニック
ラビンゾン，パトリック
リチャード，ジュリアン
セジャーズ，マルク
ジロー，ヴィンセント
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ナノプラス
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32403—Treating multiple sides of workpieces, e.g. 3D workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2015522156A 2012-07-20 2013-07-22 プラズマを用いて物体を処理する装置 Active JP6298814B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1257037A FR2993576B1 (fr) 2012-07-20 2012-07-20 Dispositif de traitement d'un objet par plasma
FR1257037 2012-07-20
PCT/FR2013/051768 WO2014013209A1 (fr) 2012-07-20 2013-07-22 Dispositif de traitement d'un objet par plasma

Publications (3)

Publication Number Publication Date
JP2015526897A JP2015526897A (ja) 2015-09-10
JP2015526897A5 JP2015526897A5 (enExample) 2016-08-04
JP6298814B2 true JP6298814B2 (ja) 2018-03-20

Family

ID=47227933

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015522156A Active JP6298814B2 (ja) 2012-07-20 2013-07-22 プラズマを用いて物体を処理する装置

Country Status (9)

Country Link
US (2) US20150243485A1 (enExample)
EP (1) EP2875517B1 (enExample)
JP (1) JP6298814B2 (enExample)
KR (1) KR102060671B1 (enExample)
CN (1) CN104685605B (enExample)
FR (1) FR2993576B1 (enExample)
SG (1) SG11201500389UA (enExample)
TW (1) TWI601181B (enExample)
WO (1) WO2014013209A1 (enExample)

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US9378975B2 (en) 2014-02-10 2016-06-28 Tokyo Electron Limited Etching method to form spacers having multiple film layers
KR20190038945A (ko) 2016-08-29 2019-04-09 도쿄엘렉트론가부시키가이샤 실리콘 질화물의 준원자 층 에칭 방법
JP6836953B2 (ja) * 2016-12-13 2021-03-03 東京エレクトロン株式会社 窒化シリコンから形成された第１領域を酸化シリコンから形成された第２領域に対して選択的にエッチングする方法
US10431470B2 (en) 2017-02-23 2019-10-01 Tokyo Electron Limited Method of quasi-atomic layer etching of silicon nitride
KR102537742B1 (ko) 2017-02-23 2023-05-26 도쿄엘렉트론가부시키가이샤 자가 정렬 블록 구조물들의 제조를 위한 실리콘 질화물 맨드렐의 이방성 추출 방법
KR102440367B1 (ko) * 2017-06-22 2022-09-05 삼성전자주식회사 Rps를 이용한 식각 방법 및 그 식각 방법을 포함한 반도체 소자 제조방법
US10607852B2 (en) * 2017-09-13 2020-03-31 Tokyo Electron Limited Selective nitride etching method for self-aligned multiple patterning
US10658192B2 (en) * 2017-09-13 2020-05-19 Tokyo Electron Limited Selective oxide etching method for self-aligned multiple patterning
CN113950334B (zh) 2019-06-07 2025-01-28 俄勒冈健康与科学大学 乙型肝炎病毒特异性t细胞应答
USD1128868S1 (en) * 2022-08-08 2026-06-02 Mancini Enterprises Private Limited Furniture component

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US5296272A (en) * 1990-10-10 1994-03-22 Hughes Aircraft Company Method of implanting ions from a plasma into an object
JP3752468B2 (ja) * 1991-04-04 2006-03-08 株式会社日立製作所 半導体装置の製造方法
JP4654176B2 (ja) * 1996-02-22 2011-03-16 住友精密工業株式会社 誘導結合プラズマ・リアクタ
US6267074B1 (en) * 1997-02-24 2001-07-31 Foi Corporation Plasma treatment systems
WO1999040609A1 (en) * 1998-02-09 1999-08-12 Applied Materials, Inc. Plasma assisted processing chamber with separate control of species density
US6051073A (en) * 1998-02-11 2000-04-18 Silicon Genesis Corporation Perforated shield for plasma immersion ion implantation
US20010002584A1 (en) * 1998-12-01 2001-06-07 Wei Liu Enhanced plasma mode and system for plasma immersion ion implantation
US20060124588A1 (en) * 1999-01-05 2006-06-15 Berg & Berg Enterprises, Llc System and method for reducing metal oxides with hydrogen radicals
JP2002100623A (ja) * 2000-09-20 2002-04-05 Fuji Daiichi Seisakusho:Kk 薄膜半導体製造装置
JP2004265627A (ja) * 2003-02-14 2004-09-24 Masato Toshima プラズマ発生装置およびプラズマエッチング装置
US20060276043A1 (en) * 2003-03-21 2006-12-07 Johnson Mark A L Method and systems for single- or multi-period edge definition lithography
AT412719B (de) * 2003-06-16 2005-06-27 Eckelt Glas Gmbh Verfahren und vorrichtung zum bereichsweisen entschichten von glasscheiben
US7015415B2 (en) * 2004-02-18 2006-03-21 Dry Plasma Systems, Inc. Higher power density downstream plasma
TWI349042B (en) * 2006-02-09 2011-09-21 Sputtering system providing large area sputtering and plasma-assisted reactive gas dissociation
KR100799175B1 (ko) * 2006-04-21 2008-02-01 주식회사 뉴파워 프라즈마 플라즈마 프로세싱 시스템 및 그 제어 방법
EP1936656A1 (en) * 2006-12-21 2008-06-25 Nederlandse Organisatie voor Toegepast-Natuuurwetenschappelijk Onderzoek TNO Plasma generator and method for cleaning an object
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Also Published As

Publication number Publication date
SG11201500389UA (en) 2015-03-30
US20180158651A1 (en) 2018-06-07
EP2875517B1 (fr) 2020-05-27
US20150243485A1 (en) 2015-08-27
TWI601181B (zh) 2017-10-01
WO2014013209A1 (fr) 2014-01-23
FR2993576A1 (fr) 2014-01-24
CN104685605A (zh) 2015-06-03
JP2015526897A (ja) 2015-09-10
KR20150038172A (ko) 2015-04-08
FR2993576B1 (fr) 2018-05-18
TW201415520A (zh) 2014-04-16
EP2875517A1 (fr) 2015-05-27
US11075057B2 (en) 2021-07-27
CN104685605B (zh) 2017-05-17
KR102060671B1 (ko) 2019-12-30

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