SG11201500389UA - Device for treating an object with plasma - Google Patents
Device for treating an object with plasmaInfo
- Publication number
- SG11201500389UA SG11201500389UA SG11201500389UA SG11201500389UA SG11201500389UA SG 11201500389U A SG11201500389U A SG 11201500389UA SG 11201500389U A SG11201500389U A SG 11201500389UA SG 11201500389U A SG11201500389U A SG 11201500389UA SG 11201500389U A SG11201500389U A SG 11201500389UA
- Authority
- SG
- Singapore
- Prior art keywords
- plasma
- treating
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32366—Localised processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32403—Treating multiple sides of workpieces, e.g. 3D workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1257037A FR2993576B1 (en) | 2012-07-20 | 2012-07-20 | DEVICE FOR PROCESSING A PLASMA OBJECT |
| PCT/FR2013/051768 WO2014013209A1 (en) | 2012-07-20 | 2013-07-22 | Device for treating an object with plasma |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201500389UA true SG11201500389UA (en) | 2015-03-30 |
Family
ID=47227933
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201500389UA SG11201500389UA (en) | 2012-07-20 | 2013-07-22 | Device for treating an object with plasma |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US20150243485A1 (en) |
| EP (1) | EP2875517B1 (en) |
| JP (1) | JP6298814B2 (en) |
| KR (1) | KR102060671B1 (en) |
| CN (1) | CN104685605B (en) |
| FR (1) | FR2993576B1 (en) |
| SG (1) | SG11201500389UA (en) |
| TW (1) | TWI601181B (en) |
| WO (1) | WO2014013209A1 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9378975B2 (en) | 2014-02-10 | 2016-06-28 | Tokyo Electron Limited | Etching method to form spacers having multiple film layers |
| WO2018044713A1 (en) * | 2016-08-29 | 2018-03-08 | Tokyo Electron Limited | Method of quasi-atomic layer etching of silicon nitride |
| JP6836953B2 (en) * | 2016-12-13 | 2021-03-03 | 東京エレクトロン株式会社 | A method of selectively etching a first region formed of silicon nitride with respect to a second region formed of silicon oxide. |
| WO2018156985A1 (en) | 2017-02-23 | 2018-08-30 | Tokyo Electron Limited | Method of anisotropic extraction of silicon nitride mandrel for fabrication of self-aligned block structures |
| WO2018156975A1 (en) | 2017-02-23 | 2018-08-30 | Tokyo Electron Limited | Method of quasi-atomic layer etching of silicon nitride |
| KR102440367B1 (en) * | 2017-06-22 | 2022-09-05 | 삼성전자주식회사 | Etching method using RPS(Remote Plasma Source), and method for fabricating semiconductor device comprising the same etching method |
| US10658192B2 (en) * | 2017-09-13 | 2020-05-19 | Tokyo Electron Limited | Selective oxide etching method for self-aligned multiple patterning |
| US10607852B2 (en) * | 2017-09-13 | 2020-03-31 | Tokyo Electron Limited | Selective nitride etching method for self-aligned multiple patterning |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5273609A (en) * | 1990-09-12 | 1993-12-28 | Texas Instruments Incorporated | Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment |
| US5296272A (en) * | 1990-10-10 | 1994-03-22 | Hughes Aircraft Company | Method of implanting ions from a plasma into an object |
| JP3752468B2 (en) * | 1991-04-04 | 2006-03-08 | 株式会社日立製作所 | Manufacturing method of semiconductor device |
| JP4654176B2 (en) * | 1996-02-22 | 2011-03-16 | 住友精密工業株式会社 | Inductively coupled plasma reactor |
| US6267074B1 (en) * | 1997-02-24 | 2001-07-31 | Foi Corporation | Plasma treatment systems |
| EP1055249A1 (en) * | 1998-02-09 | 2000-11-29 | Applied Materials, Inc. | Plasma assisted processing chamber with separate control of species density |
| US6051073A (en) * | 1998-02-11 | 2000-04-18 | Silicon Genesis Corporation | Perforated shield for plasma immersion ion implantation |
| US20010002584A1 (en) * | 1998-12-01 | 2001-06-07 | Wei Liu | Enhanced plasma mode and system for plasma immersion ion implantation |
| US20060124588A1 (en) * | 1999-01-05 | 2006-06-15 | Berg & Berg Enterprises, Llc | System and method for reducing metal oxides with hydrogen radicals |
| JP2002100623A (en) * | 2000-09-20 | 2002-04-05 | Fuji Daiichi Seisakusho:Kk | Thin film semiconductor manufacturing apparatus |
| JP2004265627A (en) * | 2003-02-14 | 2004-09-24 | Masato Toshima | Plasma generating device and plasma etching device |
| US20060276043A1 (en) * | 2003-03-21 | 2006-12-07 | Johnson Mark A L | Method and systems for single- or multi-period edge definition lithography |
| AT412719B (en) * | 2003-06-16 | 2005-06-27 | Eckelt Glas Gmbh | METHOD AND DEVICE FOR PROCESSING DEFLECTING GLASS PANELS |
| US7015415B2 (en) * | 2004-02-18 | 2006-03-21 | Dry Plasma Systems, Inc. | Higher power density downstream plasma |
| TWI349042B (en) * | 2006-02-09 | 2011-09-21 | Sputtering system providing large area sputtering and plasma-assisted reactive gas dissociation | |
| KR100799175B1 (en) * | 2006-04-21 | 2008-02-01 | 주식회사 뉴파워 프라즈마 | Plasma processing system and control method therefor |
| EP1936656A1 (en) * | 2006-12-21 | 2008-06-25 | Nederlandse Organisatie voor Toegepast-Natuuurwetenschappelijk Onderzoek TNO | Plasma generator and method for cleaning an object |
| US7976674B2 (en) * | 2007-06-13 | 2011-07-12 | Tokyo Electron Limited | Embedded multi-inductive large area plasma source |
| CN201228282Y (en) * | 2007-12-24 | 2009-04-29 | 杨思泽 | Composite material surface modification apparatus assisted by pulse high energy density plasma |
| JP5214261B2 (en) * | 2008-01-25 | 2013-06-19 | ルネサスエレクトロニクス株式会社 | Manufacturing method of semiconductor device |
| US20090286397A1 (en) * | 2008-05-15 | 2009-11-19 | Lam Research Corporation | Selective inductive double patterning |
| US8207470B2 (en) * | 2008-10-20 | 2012-06-26 | Industry-University Cooperation Foundation Hanyang University | Apparatus for generating remote plasma |
| JP2010161350A (en) * | 2008-12-09 | 2010-07-22 | Hitachi Kokusai Electric Inc | Substrate treating method |
| CN102110650A (en) * | 2009-12-29 | 2011-06-29 | 中国科学院微电子研究所 | Semiconductor device and manufacturing method thereof |
| US8574447B2 (en) * | 2010-03-31 | 2013-11-05 | Lam Research Corporation | Inorganic rapid alternating process for silicon etch |
| US9155181B2 (en) * | 2010-08-06 | 2015-10-06 | Lam Research Corporation | Distributed multi-zone plasma source systems, methods and apparatus |
-
2012
- 2012-07-20 FR FR1257037A patent/FR2993576B1/en active Active
-
2013
- 2013-07-22 SG SG11201500389UA patent/SG11201500389UA/en unknown
- 2013-07-22 JP JP2015522156A patent/JP6298814B2/en active Active
- 2013-07-22 TW TW102126199A patent/TWI601181B/en active
- 2013-07-22 CN CN201380038733.8A patent/CN104685605B/en active Active
- 2013-07-22 EP EP13756581.8A patent/EP2875517B1/en active Active
- 2013-07-22 WO PCT/FR2013/051768 patent/WO2014013209A1/en active Application Filing
- 2013-07-22 KR KR1020157004383A patent/KR102060671B1/en active IP Right Grant
- 2013-07-22 US US14/415,976 patent/US20150243485A1/en not_active Abandoned
-
2018
- 2018-01-13 US US15/870,890 patent/US11075057B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US11075057B2 (en) | 2021-07-27 |
| KR20150038172A (en) | 2015-04-08 |
| EP2875517B1 (en) | 2020-05-27 |
| CN104685605A (en) | 2015-06-03 |
| US20150243485A1 (en) | 2015-08-27 |
| JP2015526897A (en) | 2015-09-10 |
| JP6298814B2 (en) | 2018-03-20 |
| FR2993576A1 (en) | 2014-01-24 |
| FR2993576B1 (en) | 2018-05-18 |
| TWI601181B (en) | 2017-10-01 |
| WO2014013209A1 (en) | 2014-01-23 |
| KR102060671B1 (en) | 2019-12-30 |
| CN104685605B (en) | 2017-05-17 |
| US20180158651A1 (en) | 2018-06-07 |
| EP2875517A1 (en) | 2015-05-27 |
| TW201415520A (en) | 2014-04-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| HK1210691A1 (en) | Device for treating an ocular disorder | |
| EP2932540A4 (en) | Methods for processing oled devices | |
| ZA201408385B (en) | Plasma treatment device | |
| EP2787497A4 (en) | Failure-assessment apparatus | |
| EP2858210A4 (en) | Device for activating multi-bms | |
| HK1224264A1 (en) | Substrate processing device | |
| EP2871630A4 (en) | Wakefulness-maintenance apparatus | |
| IL235493B (en) | Device for treating an ocular disorder | |
| EP2931007A4 (en) | Microwave processing device | |
| SG11201500389UA (en) | Device for treating an object with plasma | |
| GB201218666D0 (en) | Apparatus | |
| PL2825704T3 (en) | Path-clearing apparatus | |
| EP2892307A4 (en) | Plasma generation device | |
| EP2879166A4 (en) | Plasma processing method and plasma processing device | |
| EP2881574A4 (en) | Fuel vapor processing apparatus | |
| GB201220673D0 (en) | Apparatus | |
| EP2928270A4 (en) | Plasma generating device | |
| TWI562685B (en) | Plasma processing device | |
| SG11201504354SA (en) | Computing device | |
| SG10201709310WA (en) | Plasma source | |
| GB201300914D0 (en) | Apparatus | |
| HK1204350A1 (en) | High-frequency plasma ignition device | |
| EP2735541A4 (en) | Fuel processing device | |
| GB201218575D0 (en) | Nephroureterectomy apparatus | |
| HK1209999A1 (en) | Apparatus |