JP6890550B2 - 高アスペクト比ビアの洗浄 - Google Patents
高アスペクト比ビアの洗浄 Download PDFInfo
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- JP6890550B2 JP6890550B2 JP2017555519A JP2017555519A JP6890550B2 JP 6890550 B2 JP6890550 B2 JP 6890550B2 JP 2017555519 A JP2017555519 A JP 2017555519A JP 2017555519 A JP2017555519 A JP 2017555519A JP 6890550 B2 JP6890550 B2 JP 6890550B2
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 11
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- 238000007254 oxidation reaction Methods 0.000 description 2
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
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- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
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- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
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Description
Claims (14)
- パターン基板をエッチングする方法であって、
前記パターン基板にフォトレジスト層のパターンを形成することと、
高アスペクト比ビアを前記パターン基板に反応性イオンエッチングすることであって、
反応性イオンエッチングは、前記高アスペクト比ビアの底部にアモルファスシリコン層を形成する、反応性イオンエッチングすることと、
前記パターン基板から前記フォトレジスト層をアッシングすることであって、前記アッシングすることにより前記アモルファスシリコン層の上に酸化ケイ素層が形成され、前記アモルファスシリコン層と前記酸化ケイ素層との間に薄い炭素層が形成される、アッシングすることと、
前記高アスペクト比ビアの底部から前記酸化ケイ素層を選択的にエッチングすることと、
前記薄い炭素層を、不活性ガスを流入させることにより前記高アスペクト比の底部をスパッタリングすることによって除去することと、
単結晶シリコンを露出させるために、前記高アスペクト比ビアの底部から前記アモルファスシリコン層を選択的にエッチングすることと
を含む方法。 - 前記酸化ケイ素層を選択的にエッチングする工程と、前記アモルファスシリコン層を選択的にエッチングする工程とが、同じ基板処理領域で行われる、請求項1に記載の方法。
- パターン基板をエッチングする方法であって、
25:1よりも大きい高さ幅アスペクト比を有する高アスペクト比ビアを有する前記パターン基板を基板処理領域に配置することと、
遠隔プラズマ領域で遠隔プラズマを形成している間に、フッ素含有前駆体を前記遠隔プラズマ領域に流入させて、プラズマ放出物を生成することと、
第1のシャワーヘッドを通して前記プラズマ放出物を前記第1のシャワーヘッドと第2のシャワーヘッドとの間のシャワーヘッド間領域に流入させることと、
前記シャワーヘッド間領域において、前記プラズマ放出物を窒素水素含有前駆体と結合させることであって、前記窒素水素含有前駆体はいかなるプラズマも通過せずに前駆体の結合を形成する、結合させることと、
前記第2のシャワーヘッドを通して前記前駆体の結合を前記基板処理領域に流入させることと、
前記基板処理領域に局所プラズマを形成することと、
前記高アスペクト比ビアの底部から酸化ケイ素の露出部分を除去することとを含む方法。 - 前記高アスペクト比ビアの幅は、120nmを下回る、請求項3に記載の方法。
- 前記プラズマ放出物を結合させる工程の間、前記シャワーヘッド間領域はプラズマフリーである、請求項3に記載の方法。
- 前記プラズマ放出物を結合させる工程の間の前記シャワーヘッド間領域内の電子温度は0.5eVを下回り、前記プラズマ放出物を結合させる工程の間の前記遠隔プラズマ領域内の電子温度、及び前記基板処理領域内の電子温度は各々、0.5eVを上回る、請求項3に記載の方法。
- 前記酸化ケイ素の露出部分を除去することにより、前記高アスペクト比ビアの側壁からも、側壁底部近くの底部除去速度が側壁上部近くの上部除去速度の10%以内になるように、一様な速度で酸化ケイ素が除去される、請求項3に記載の方法。
- 前記遠隔プラズマが容量結合されており、前記局所プラズマが容量結合されている、請求項3に記載の方法。
- 前記高アスペクト比ビアの底部からアモルファスシリコン部分を除去する工程を更に含み、前記アモルファスシリコン部分を除去する工程は、前記酸化ケイ素の露出部分が除去された後に行われ、前記アモルファスシリコン部分を除去する工程により、単結晶シリコンが露出する、請求項3に記載の方法。
- 前記単結晶シリコン上で単結晶シリコンをエピタキシャル成長させる工程を更に含む、請求項9に記載の方法。
- 前記アモルファスシリコン部分を除去する工程は更に、フッ素局所プラズマ出力を有するフッ素局所プラズマを形成する間に、前記基板処理領域に第2のフッ素含有前駆体を流入させることを含む、請求項9に記載の方法。
- 前記アモルファスシリコン部分を除去する工程は、水素遠隔プラズマ出力を有する水素遠隔プラズマを形成する間に、水素含有前駆体を前記遠隔プラズマ領域に流入させて水素プラズマ放出物を形成することを含み、前記アモルファスシリコン部分を除去する工程は更に、前記水素プラズマ放出物を前記第1のシャワーヘッドを通した後に前記シャワーヘッド間領域に流入させ、次に前記第2のシャワーヘッドを通して前記基板処理領域に流入させ、前記基板処理領域内の水素局所プラズマ出力を有する水素局所プラズマ内で前記水素プラズマ放出物を更に励起させることを含む、請求項9に記載の方法。
- 前記水素含有前駆体を流入させる工程の間の前記シャワーヘッド間領域内の電子温度は0.5eVを下回り、前記水素含有前駆体を流入させる工程の間の前記遠隔プラズマ領域内の電子温度と、前記基板処理領域内の電子温度は各々、0.5eVを上回る、請求項12に記載の方法。
- パターン基板をエッチングする方法であって、
25:1よりも大きい高さ幅アスペクト比を有する高アスペクト比ビアを有する前記パターン基板を基板処理領域に配置することと、
遠隔プラズマ領域で遠隔プラズマを形成している間に、フッ素含有前駆体を前記遠隔プラズマ領域に流入させて、プラズマ放出物を生成することと、
前記プラズマ放出物を第1のシャワーヘッドを通して前記第1のシャワーヘッドと第2のシャワーヘッドとの間のシャワーヘッド間領域に流入させることと、
前記プラズマ放出物を、いかなるプラズマも通過していない窒素水素含有前駆体と結合させて、前駆体の結合を形成することと、
前記第2のシャワーヘッドを通して前記前駆体の結合を前記基板処理領域に流入させることと、
前記基板処理領域に局所プラズマを形成することと、
前記高アスペクト比ビアの底部から酸化ケイ素の露出部分を除去することと、
不活性ガスからスパッタリング局所プラズマを形成する間に、前記不活性ガスを前記基板処理領域に流入させることと、
前記パターン基板をスパッタリングすることと、
フッ素局所プラズマ出力を有するフッ素局所プラズマを形成している間に、フッ素含有前駆体を前記基板処理領域に流入させることと、
前記高アスペクト比ビアの底部からアモルファスシリコンを除去して、露出した単結晶シリコンを露出させることと
を含む方法。
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TW201709267A (zh) | 2017-03-01 |
TWI671786B (zh) | 2019-09-11 |
CN107810546A (zh) | 2018-03-16 |
US20160314961A1 (en) | 2016-10-27 |
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