JP6928763B2 - マイクロ波プラズマによりナノワイヤの角を丸め、調整する方法 - Google Patents

マイクロ波プラズマによりナノワイヤの角を丸め、調整する方法 Download PDF

Info

Publication number
JP6928763B2
JP6928763B2 JP2018523021A JP2018523021A JP6928763B2 JP 6928763 B2 JP6928763 B2 JP 6928763B2 JP 2018523021 A JP2018523021 A JP 2018523021A JP 2018523021 A JP2018523021 A JP 2018523021A JP 6928763 B2 JP6928763 B2 JP 6928763B2
Authority
JP
Japan
Prior art keywords
nanowires
gas
plasma
surface layer
microwave plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018523021A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019504467A (ja
JP2019504467A5 (enExample
Inventor
エヌ． タピリー，カンダバラ
エヌ． タピリー，カンダバラ
トリケット，イーン
知大 田村
知大 田村
ワイダ，コーリー
ジェイ． ルーシンク，ゲリット
ジェイ． ルーシンク，ゲリット
前川　薫
薫 前川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JP2019504467A publication Critical patent/JP2019504467A/ja
Publication of JP2019504467A5 publication Critical patent/JP2019504467A5/ja
Application granted granted Critical
Publication of JP6928763B2 publication Critical patent/JP6928763B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/0009—Forming specific nanostructures
    • B82B3/0038—Manufacturing processes for forming specific nanostructures not provided for in groups B82B3/0014 - B82B3/0033
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B01J19/088—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
    • C01P2004/16—Nanowires or nanorods, i.e. solid nanofibres with two nearly equal dimensions between 1-100 nanometer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/43—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 1D charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Plasma Technology (AREA)
  • Silicon Compounds (AREA)
  • Drying Of Semiconductors (AREA)
JP2018523021A 2015-11-03 2016-11-03 マイクロ波プラズマによりナノワイヤの角を丸め、調整する方法 Active JP6928763B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562250395P 2015-11-03 2015-11-03
US62/250,395 2015-11-03
PCT/US2016/060378 WO2017079470A1 (en) 2015-11-03 2016-11-03 Method of corner rounding and trimming of nanowires by microwave plasma

Publications (3)

Publication Number Publication Date
JP2019504467A JP2019504467A (ja) 2019-02-14
JP2019504467A5 JP2019504467A5 (enExample) 2019-11-21
JP6928763B2 true JP6928763B2 (ja) 2021-09-01

Family

ID=58635828

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018523021A Active JP6928763B2 (ja) 2015-11-03 2016-11-03 マイクロ波プラズマによりナノワイヤの角を丸め、調整する方法

Country Status (4)

Country Link
US (1) US10008564B2 (enExample)
JP (1) JP6928763B2 (enExample)
KR (1) KR102396835B1 (enExample)
WO (1) WO2017079470A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI845516B (zh) * 2018-06-22 2024-06-21 日商東京威力科創股份有限公司 奈米線裝置的形成方法
US11810761B2 (en) 2018-07-27 2023-11-07 Eagle Harbor Technologies, Inc. Nanosecond pulser ADC system
KR102499709B1 (ko) * 2018-08-10 2023-02-16 이글 하버 테크놀로지스, 인코포레이티드 RF 플라즈마 반응기용 플라즈마 시스(sheath) 제어
JP7072477B2 (ja) * 2018-09-20 2022-05-20 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
JP7414593B2 (ja) * 2020-03-10 2024-01-16 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US11967484B2 (en) 2020-07-09 2024-04-23 Eagle Harbor Technologies, Inc. Ion current droop compensation
US11824542B1 (en) 2022-06-29 2023-11-21 Eagle Harbor Technologies, Inc. Bipolar high voltage pulser
KR20250084155A (ko) 2022-09-29 2025-06-10 이글 하버 테크놀로지스, 인코포레이티드 고전압 플라즈마 제어
JP2024079879A (ja) * 2022-12-01 2024-06-13 東京エレクトロン株式会社 プラズマ処理装置

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7829144B2 (en) * 1997-11-05 2010-11-09 Tokyo Electron Limited Method of forming a metal film for electrode
US6793967B1 (en) * 1999-06-25 2004-09-21 Sony Corporation Carbonaceous complex structure and manufacturing method therefor
US6235643B1 (en) * 1999-08-10 2001-05-22 Applied Materials, Inc. Method for etching a trench having rounded top and bottom corners in a silicon substrate
US7445671B2 (en) * 2000-06-29 2008-11-04 University Of Louisville Formation of metal oxide nanowire networks (nanowebs) of low-melting metals
US7029536B2 (en) * 2003-03-17 2006-04-18 Tokyo Electron Limited Processing system and method for treating a substrate
US6852584B1 (en) 2004-01-14 2005-02-08 Tokyo Electron Limited Method of trimming a gate electrode structure
US7452778B2 (en) * 2004-06-10 2008-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor nano-wire devices and methods of fabrication
KR100594327B1 (ko) * 2005-03-24 2006-06-30 삼성전자주식회사 라운드 형태의 단면을 가지는 나노와이어를 구비한 반도체소자 및 그 제조 방법
KR101163816B1 (ko) * 2005-09-22 2012-07-09 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법 및 장치
US9716153B2 (en) * 2007-05-25 2017-07-25 Cypress Semiconductor Corporation Nonvolatile charge trap memory device having a deuterated layer in a multi-layer charge-trapping region
US7981763B1 (en) * 2008-08-15 2011-07-19 Novellus Systems, Inc. Atomic layer removal for high aspect ratio gapfill
JP2010093051A (ja) * 2008-10-08 2010-04-22 Fujitsu Microelectronics Ltd 電界効果型半導体装置
US7893492B2 (en) * 2009-02-17 2011-02-22 International Business Machines Corporation Nanowire mesh device and method of fabricating same
US8211735B2 (en) * 2009-06-08 2012-07-03 International Business Machines Corporation Nano/microwire solar cell fabricated by nano/microsphere lithography
FR2950481B1 (fr) * 2009-09-18 2011-10-28 Commissariat Energie Atomique Realisation d'un dispositif microelectronique comprenant des nano-fils de silicium et de germanium integres sur un meme substrat
CN102034863B (zh) 2009-09-28 2012-10-31 中芯国际集成电路制造(上海)有限公司 半导体器件、含包围圆柱形沟道的栅的晶体管及制造方法
DE102011107072B8 (de) * 2011-07-12 2013-01-17 Centrotherm Thermal Solutions Gmbh & Co. Kg Verfahren zum ausbilden einer oxidschicht auf einem substrat bei tiefen temperaturen
US8771536B2 (en) * 2011-08-01 2014-07-08 Applied Materials, Inc. Dry-etch for silicon-and-carbon-containing films
JP6016339B2 (ja) * 2011-08-12 2016-10-26 東京エレクトロン株式会社 カーボンナノチューブの加工方法及び加工装置
US20130149852A1 (en) * 2011-12-08 2013-06-13 Tokyo Electron Limited Method for forming a semiconductor device
US8557632B1 (en) * 2012-04-09 2013-10-15 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US9059398B2 (en) * 2012-08-03 2015-06-16 Applied Materials, Inc. Methods for etching materials used in MRAM applications
US8889497B2 (en) * 2012-12-28 2014-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacture thereof
KR101452693B1 (ko) * 2013-04-09 2014-10-22 주식회사 테스 기판처리방법
EP2887399B1 (en) * 2013-12-20 2017-08-30 Imec A method for manufacturing a transistor device and associated device
US9419107B2 (en) * 2014-06-19 2016-08-16 Applied Materials, Inc. Method for fabricating vertically stacked nanowires for semiconductor applications
KR102799414B1 (ko) * 2015-12-28 2025-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치를 포함하는 표시 장치
JP6590716B2 (ja) * 2016-02-02 2019-10-16 東京エレクトロン株式会社 トランジスタの閾値制御方法および半導体装置の製造方法

Also Published As

Publication number Publication date
JP2019504467A (ja) 2019-02-14
KR102396835B1 (ko) 2022-05-10
US20170125517A1 (en) 2017-05-04
US10008564B2 (en) 2018-06-26
KR20180064545A (ko) 2018-06-14
WO2017079470A1 (en) 2017-05-11

Similar Documents

Publication Publication Date Title
JP6928763B2 (ja) マイクロ波プラズマによりナノワイヤの角を丸め、調整する方法
US10204796B2 (en) Methods for selective etching of a silicon material using HF gas without nitrogen etchants
US10062564B2 (en) Method of selective gas phase film deposition on a substrate by modifying the surface using hydrogen plasma
JP5706946B2 (ja) プラズマエッチング方法及びプラズマエッチング装置
JP6010387B2 (ja) 半導体装置を形成するための方法
TWI587389B (zh) 基板處理方法
US20160005833A1 (en) Feol low-k spacers
KR101938441B1 (ko) 반도체 디바이스의 형성 방법
KR20190095142A (ko) 실리콘 산화물막에 대한 증착후 처리 방법
KR101333352B1 (ko) 에칭 방법 및 장치
KR102083036B1 (ko) 수소 플라즈마를 사용하여 반도체 상에 계면층을 형성하는 방법
TW201724500A (zh) 用於製造對於半導體應用的水平環繞式閘極裝置的奈米線的方法
TW201001535A (en) Method of semiconductor processing
JP6424249B2 (ja) シリコン及びゲルマニウムを含む基板におけるシリコンの優先的酸化のための方法
CN109923660B (zh) 高压退火及降低湿蚀刻速率
TW202436637A (zh) 表面金屬氧化物之電化學還原
KR20250038776A (ko) 개선된 필름 품질을 갖는 필름들의 형성
JP2008270251A (ja) 金属含有ｉｖ族薄膜の形成方法及び半導体装置の製造方法並びにマイクロデバイス

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20191009

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20191009

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20201124

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20210224

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210421

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20210525

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20210618

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20210618

R150 Certificate of patent or registration of utility model

Ref document number: 6928763

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250