JP2016208031A5 - - Google Patents
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- JP2016208031A5 JP2016208031A5 JP2016083292A JP2016083292A JP2016208031A5 JP 2016208031 A5 JP2016208031 A5 JP 2016208031A5 JP 2016083292 A JP2016083292 A JP 2016083292A JP 2016083292 A JP2016083292 A JP 2016083292A JP 2016208031 A5 JP2016208031 A5 JP 2016208031A5
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Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562150053P | 2015-04-20 | 2015-04-20 | |
| US62/150,053 | 2015-04-20 | ||
| US14/749,291 US9806252B2 (en) | 2015-04-20 | 2015-06-24 | Dry plasma etch method to pattern MRAM stack |
| US14/749,291 | 2015-06-24 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016208031A JP2016208031A (ja) | 2016-12-08 |
| JP2016208031A5 true JP2016208031A5 (enExample) | 2019-05-30 |
| JP6804864B2 JP6804864B2 (ja) | 2020-12-23 |
Family
ID=57130027
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016083292A Active JP6804864B2 (ja) | 2015-04-20 | 2016-04-19 | Ｍｒａｍスタックをパターニングする乾式プラズマ・エッチング法 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US9806252B2 (enExample) |
| JP (1) | JP6804864B2 (enExample) |
| KR (2) | KR102515411B1 (enExample) |
| CN (3) | CN110379918B (enExample) |
| SG (1) | SG10201603090VA (enExample) |
| TW (2) | TWI690097B (enExample) |
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