JP2020515047A5 - - Google Patents
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- Publication number
- JP2020515047A5 JP2020515047A5 JP2019536103A JP2019536103A JP2020515047A5 JP 2020515047 A5 JP2020515047 A5 JP 2020515047A5 JP 2019536103 A JP2019536103 A JP 2019536103A JP 2019536103 A JP2019536103 A JP 2019536103A JP 2020515047 A5 JP2020515047 A5 JP 2020515047A5
- Authority
- JP
- Japan
- Prior art keywords
- etching
- layer
- iodine
- selectivity
- formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 description 14
- 239000010410 layer Substances 0.000 description 12
- 229910052740 iodine Inorganic materials 0.000 description 8
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000011630 iodine Substances 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- FEJGXYOLCAYRJW-OWOJBTEDSA-N (e)-1,2-difluoro-1-iodoethene Chemical compound F\C=C(/F)I FEJGXYOLCAYRJW-OWOJBTEDSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 101001015052 Zea mays Trypsin/factor XIIA inhibitor Proteins 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023018581A JP7470834B2 (ja) | 2016-12-30 | 2023-02-09 | 半導体構造エッチング用ヨウ素含有化合物 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/396,220 | 2016-12-30 | ||
| US15/396,220 US10607850B2 (en) | 2016-12-30 | 2016-12-30 | Iodine-containing compounds for etching semiconductor structures |
| PCT/US2017/069085 WO2018126206A1 (en) | 2016-12-30 | 2017-12-29 | Iodine-containing compounds for etching semiconductor structures |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023018581A Division JP7470834B2 (ja) | 2016-12-30 | 2023-02-09 | 半導体構造エッチング用ヨウ素含有化合物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020515047A JP2020515047A (ja) | 2020-05-21 |
| JP2020515047A5 true JP2020515047A5 (enExample) | 2021-02-12 |
| JP7227135B2 JP7227135B2 (ja) | 2023-02-21 |
Family
ID=59066602
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019536103A Active JP7227135B2 (ja) | 2016-12-30 | 2017-12-29 | 半導体構造エッチング用ヨウ素含有化合物 |
| JP2023018581A Active JP7470834B2 (ja) | 2016-12-30 | 2023-02-09 | 半導体構造エッチング用ヨウ素含有化合物 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023018581A Active JP7470834B2 (ja) | 2016-12-30 | 2023-02-09 | 半導体構造エッチング用ヨウ素含有化合物 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US10607850B2 (enExample) |
| EP (1) | EP3563406B1 (enExample) |
| JP (2) | JP7227135B2 (enExample) |
| KR (2) | KR102626466B1 (enExample) |
| CN (2) | CN110178206B (enExample) |
| TW (2) | TWI887536B (enExample) |
| WO (1) | WO2018126206A1 (enExample) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180277387A1 (en) * | 2014-08-06 | 2018-09-27 | American Air Liquide, Inc. | Gases for low damage selective silicon nitride etching |
| US10607850B2 (en) * | 2016-12-30 | 2020-03-31 | American Air Liquide, Inc. | Iodine-containing compounds for etching semiconductor structures |
| US10446681B2 (en) | 2017-07-10 | 2019-10-15 | Micron Technology, Inc. | NAND memory arrays, and devices comprising semiconductor channel material and nitrogen |
| US10276398B2 (en) * | 2017-08-02 | 2019-04-30 | Lam Research Corporation | High aspect ratio selective lateral etch using cyclic passivation and etching |
| DE102017128070B4 (de) * | 2017-08-31 | 2023-08-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Ätzen zum Verringern von Bahnunregelmässigkeiten |
| JP6883495B2 (ja) * | 2017-09-04 | 2021-06-09 | 東京エレクトロン株式会社 | エッチング方法 |
| JP2019050305A (ja) * | 2017-09-11 | 2019-03-28 | 東芝メモリ株式会社 | プラズマエッチング方法、及び、半導体装置の製造方法 |
| US10297611B1 (en) | 2017-12-27 | 2019-05-21 | Micron Technology, Inc. | Transistors and arrays of elevationally-extending strings of memory cells |
| US10559466B2 (en) | 2017-12-27 | 2020-02-11 | Micron Technology, Inc. | Methods of forming a channel region of a transistor and methods used in forming a memory array |
| US10529581B2 (en) | 2017-12-29 | 2020-01-07 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | SiN selective etch to SiO2 with non-plasma dry process for 3D NAND device applications |
| KR102272823B1 (ko) * | 2018-07-30 | 2021-07-02 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 및 에칭 장치 |
| JP7209567B2 (ja) * | 2018-07-30 | 2023-01-20 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
| IL283831B2 (en) * | 2018-12-21 | 2025-07-01 | Showa Denko Kk | Halogen fluoride etching method and semiconductor manufacturing method |
| US11145504B2 (en) * | 2019-01-14 | 2021-10-12 | Applied Materials, Inc. | Method of forming film stacks with reduced defects |
| KR20210114509A (ko) * | 2019-01-23 | 2021-09-23 | 샌트랄 글래스 컴퍼니 리미티드 | 드라이 에칭 방법, 드라이 에칭제, 및 그 보존 용기 |
| US10629451B1 (en) * | 2019-02-01 | 2020-04-21 | American Air Liquide, Inc. | Method to improve profile control during selective etching of silicon nitride spacers |
| US10978473B2 (en) * | 2019-02-12 | 2021-04-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Flash memory structure and method of forming the same |
| CN113614891A (zh) * | 2019-03-22 | 2021-11-05 | 中央硝子株式会社 | 干蚀刻方法及半导体装置的制造方法 |
| JP7604145B2 (ja) * | 2019-11-25 | 2024-12-23 | 東京エレクトロン株式会社 | 基板処理方法及びプラズマ処理装置 |
| US11521846B2 (en) | 2019-12-16 | 2022-12-06 | Taiwan Semiconductor Manufacturing Company Limited | Methods for patterning a silicon oxide-silicon nitride-silicon oxide stack and structures formed by the same |
| KR102664702B1 (ko) * | 2020-02-14 | 2024-05-09 | 한양대학교 산학협력단 | 식각 선택비의 조절에 의한 미세패턴의 형성방법 |
| FR3107280B1 (fr) * | 2020-02-19 | 2023-01-13 | Arkema France | Composition comprenant un composé iodofluorocarbure |
| JP2021163839A (ja) * | 2020-03-31 | 2021-10-11 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| US11798811B2 (en) * | 2020-06-26 | 2023-10-24 | American Air Liquide, Inc. | Iodine-containing fluorocarbon and hydrofluorocarbon compounds for etching semiconductor structures |
| WO2022080267A1 (ja) * | 2020-10-15 | 2022-04-21 | 昭和電工株式会社 | エッチングガス、エッチング方法、及び半導体素子の製造方法 |
| US12106971B2 (en) * | 2020-12-28 | 2024-10-01 | American Air Liquide, Inc. | High conductive passivation layers and method of forming the same during high aspect ratio plasma etching |
| US11538919B2 (en) | 2021-02-23 | 2022-12-27 | Micron Technology, Inc. | Transistors and arrays of elevationally-extending strings of memory cells |
| KR20220122260A (ko) * | 2021-02-26 | 2022-09-02 | 에스케이스페셜티 주식회사 | 실리콘 함유막의 다중 적층체의 식각 방법 및 이를 포함하는 반도체 디바이스의 제조방법 |
| KR20220126045A (ko) * | 2021-03-08 | 2022-09-15 | 에스케이스페셜티 주식회사 | 실리콘 함유막의 다중 적층체의 식각 방법 및 이를 포함하는 반도체 디바이스의 제조방법 |
| US20220293430A1 (en) * | 2021-03-12 | 2022-09-15 | Applied Materials, Inc. | Isotropic silicon nitride removal |
| JP7638119B2 (ja) * | 2021-03-15 | 2025-03-03 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| CN114023879B (zh) * | 2021-10-20 | 2025-02-11 | 上海华虹宏力半导体制造有限公司 | 表面粗糙的多晶硅结构的刻蚀方法 |
| US12272562B2 (en) * | 2021-12-17 | 2025-04-08 | L'Aire Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Oxygen and iodine-containing hydrofluorocarbon compound for etching semiconductor structures |
| US12188123B2 (en) * | 2021-12-17 | 2025-01-07 | American Air Liquide, Inc. | Deposition of iodine-containing carbon films |
| KR20250070060A (ko) * | 2022-09-13 | 2025-05-20 | 램 리써치 코포레이션 | Hf 가스를 사용하여 피처를 에칭하기 위한 방법 |
| JP2025530844A (ja) * | 2022-09-13 | 2025-09-17 | ラム リサーチ コーポレーション | スタック内にフィーチャをエッチングするための方法 |
| WO2025117301A1 (en) * | 2023-11-27 | 2025-06-05 | Lam Research Corporation | SELECTIVE ETCH OF STACK USING A HYDROGEN CONTAINING COMPONENT AND AT LEAST ONE OF SeF6, AND IF7 AND TeF6 |
Family Cites Families (36)
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| JP3371143B2 (ja) * | 1991-06-03 | 2003-01-27 | ソニー株式会社 | ドライエッチング方法 |
| EP0854502A3 (en) * | 1997-01-21 | 1998-09-02 | Texas Instruments Incorporated | Iodofluorocarbon gas for the etching of dielectric layers and the cleaning of process chambers |
| JPH10223614A (ja) | 1997-02-12 | 1998-08-21 | Daikin Ind Ltd | エッチングガスおよびクリーニングガス |
| JP3559691B2 (ja) * | 1997-09-04 | 2004-09-02 | 株式会社日立製作所 | 半導体装置の製造方法 |
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| KR100727834B1 (ko) * | 2000-09-07 | 2007-06-14 | 다이킨 고교 가부시키가이샤 | 드라이 에칭 가스 및 드라이 에칭 방법 |
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| KR102333443B1 (ko) | 2014-10-24 | 2021-12-02 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
| US9728422B2 (en) | 2015-01-23 | 2017-08-08 | Central Glass Company, Limited | Dry etching method |
| JP6544215B2 (ja) * | 2015-01-23 | 2019-07-17 | セントラル硝子株式会社 | ドライエッチング方法 |
| US9659788B2 (en) * | 2015-08-31 | 2017-05-23 | American Air Liquide, Inc. | Nitrogen-containing compounds for etching semiconductor structures |
| US10607850B2 (en) * | 2016-12-30 | 2020-03-31 | American Air Liquide, Inc. | Iodine-containing compounds for etching semiconductor structures |
-
2016
- 2016-12-30 US US15/396,220 patent/US10607850B2/en active Active
-
2017
- 2017-12-21 TW TW111112039A patent/TWI887536B/zh active
- 2017-12-21 TW TW106145082A patent/TWI756330B/zh active
- 2017-12-29 EP EP17889218.8A patent/EP3563406B1/en active Active
- 2017-12-29 CN CN201780081811.0A patent/CN110178206B/zh active Active
- 2017-12-29 WO PCT/US2017/069085 patent/WO2018126206A1/en not_active Ceased
- 2017-12-29 KR KR1020237016440A patent/KR102626466B1/ko active Active
- 2017-12-29 KR KR1020197020788A patent/KR102537653B1/ko active Active
- 2017-12-29 CN CN202311017020.5A patent/CN116884838A/zh active Pending
- 2017-12-29 JP JP2019536103A patent/JP7227135B2/ja active Active
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2020
- 2020-03-03 US US16/807,247 patent/US11430663B2/en active Active
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2023
- 2023-02-09 JP JP2023018581A patent/JP7470834B2/ja active Active
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