JP2018508176A - 高電力回路のためのスイッチングデバイスの並列化 - Google Patents
高電力回路のためのスイッチングデバイスの並列化 Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 description 3
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
- H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P27/00—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage
- H02P27/04—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage
- H02P27/06—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters
- H02P27/08—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters with pulse width modulation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/12—Modifications for increasing the maximum permissible switched current
- H03K17/122—Modifications for increasing the maximum permissible switched current in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
- H03K17/163—Soft switching
- H03K17/164—Soft switching using parallel switching arrangements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
- H03K17/64—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors having inductive loads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/539—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters with automatic control of output wave form or frequency
- H02M7/5395—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters with automatic control of output wave form or frequency by pulse-width modulation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
- Inverter Devices (AREA)
Abstract
Description
本願は、U.S.C第119条(e)(1)のもと、2015年3月13日出願の米国仮出願62/133,253号の優先権を主張する。同文献は参照により本願に組み込まれる。
Claims (19)
- 第1ハイサイドスイッチ、第1ローサイドスイッチ、第1ゲートドライバを備え、前記第1ゲートドライバは、前記第1ハイサイドスイッチと前記第1ローサイドスイッチに対してスイッチング信号を印加するように構成されている、第1ハーフブリッジ、
第2ハイサイドスイッチ、第2ローサイドスイッチ、第2ゲートドライバを備え、前記第2ゲートドライバは、前記第2ハイサイドスイッチと前記第2ローサイドスイッチに対してスイッチング信号を印加するように構成されている、第2ハーフブリッジ、
前記第1ハーフブリッジの出力ノードに対して電気的に接続された第1サイドを有し、前記第1ハーフブリッジの前記出力ノードは、前記第1ハイサイドスイッチと前記第1ローサイドスイッチとの間に配置されている、第1インダクタ、
前記第2ハーフブリッジの出力ノードに対して電気的に接続された第1サイドを有し、前記第2ハーフブリッジの前記出力ノードは、前記第2ハイサイドスイッチと前記第2ローサイドスイッチとの間に配置されている、第2インダクタ、
前記第1インダクタの第2サイドと前記第2インダクタの第2サイドとの間に配置されたノードに対して接続されているメインインダクタ、
を備え、
前記メインインダクタのインダクタンスは、前記第1インダクタのインダクタンスよりも大きく、前記第2インダクタのインダクタンスよりも大きく、
前記第1インダクタと前記第2インダクタは、互いに反対向きに接続されている
ことを特徴とする回路。 - 前記第1インダクタと前記第2インダクタの結合係数は、約−0.9からー1.0の範囲である
ことを特徴とする請求項1記載の回路。 - 前記第1ハイサイドスイッチと前記第2ハイサイドスイッチは、第1PWMソースから共通タイミング信号を受け取るように構成されており、前記第1ローサイドスイッチと前記第1ローサイドスイッチは、第2PWMソースから共通タイミング信号を受け取るように構成されている
ことを特徴とする請求項1記載の回路。 - 前記第1ハーフブリッジと前記第2ハーフブリッジは並列接続されるとともに、単一のハーフブリッジ回路として動作するように構成されており、前記単一のハーフブリッジ回路は、前記第1ハーフブリッジと前記第2ハーフブリッジよりも大きい最大出力電流を有する
ことを特徴とする請求項3記載の回路。 - 前記第1PWMソースは、前記第1ゲートドライバの第1入力と前記第2ゲートドライバの第1入力に対して接続されており、前記第2PWMソースは、前記第1ゲートドライバの第2入力と前記第2ゲートドライバの第2入力に対して接続されている
ことを特徴とする請求項3記載の回路。 - 前記第1および第2ハイサイドスイッチと前記第1および第2ローサイドスイッチはそれぞれ、2以上の並列接続されたスイッチを備える
ことを特徴とする請求項1記載の回路。 - 前記第1ハイサイドスイッチと前記第2ハイサイドスイッチは、高電圧ノードに対して接続されており、前記第1ローサイドスイッチと前記第2ローサイドスイッチは、低電圧ノードまたはグランドノードに対して接続されている
ことを特徴とする請求項1記載の回路。 - 前記高電圧ノードにおける前記低電圧ノードまたはグランドノードに対する電圧は、約400Vまたはそれ以上である
ことを特徴とする請求項7記載の回路。 - 前記第1ゲートドライバと前記第2ゲートドライバは、30kHzから10MHzの周波数で前記スイッチング信号を印加するように構成されている
ことを特徴とする請求項8記載の回路。 - 前記第1および第2ハイサイドスイッチと前記第1および第2ローサイドスイッチは、III族窒化物デバイスを備える
ことを特徴とする請求項1記載の回路。 - 前記III族窒化物デバイスは、III族窒化物エンハンスメントモードトランジスタである
ことを特徴とする請求項10記載の回路。 - 前記III族窒化物デバイスはハイブリッドデバイスであり、各前記ハイブリッドデバイスは、空乏モードIII族窒化物トランジスタとエンハンスメントモードシリコントランジスタを備える
ことを特徴とする請求項10記載の回路。 - 前記メインインダクタは、前記回路の前記ハーフブリッジによって駆動または制御される負荷の一部である
ことを特徴とする請求項1記載の回路。 - 前記負荷は、電気モータを備える
ことを特徴とする請求項13記載の回路。 - 負荷に対して出力電流を提供するように構成された回路を動作させる方法であって、
前記回路の第1ハーフブリッジの第1ゲートドライバによって、前記第1ハーフブリッジの第1ハイサイドスイッチと第1ローサイドスイッチに対してスイッチング信号を印加するとともに、前記印加されたスイッチング信号に応答して、前記第1ハーフブリッジの出力を介して第1出力電流を提供するステップ、
前記回路の第2ハーフブリッジの第2ゲートドライバによって、前記第2ハーフブリッジの第2ハイサイドスイッチと第2ローサイドスイッチに対してスイッチング信号を印加するとともに、前記印加されたスイッチング信号に応答して、前記第2ハーフブリッジの出力を介して第2出力電流を提供するステップ、
第1期間において、前記回路の前記出力電流を前記負荷に対して第1電流レベルで提供しながら、前記第1ハーフブリッジと前記第2ハーフブリッジを動作させて、各前記ハーフブリッジの出力を介して前記第1出力電流と前記第2出力電流を提供することにより、前記第1期間において前記負荷に対して提供される出力電流の総和が前記第1出力電流と前記第2出力電流の和となるようにするステップ、
第2期間において、前記回路の前記出力電流を前記負荷に対して前記第1電流レベルよりも小さい第2電流レベルで提供しながら、前記第2ハーフブリッジをOFF状態に維持しつつ前記第1ハーフブリッジを動作させて、前記第1ハーフブリッジの出力を介して前記第1出力電流を提供することにより、前記第2期間において前記負荷に対して提供される出力電流の総和が前記第1出力電流と等しくなるようにするステップ、
を有することを特徴とする方法。 - 前記回路はさらに、(i)前記第1ハーフブリッジの出力に接続された第1インダクタ、(ii)前記第2ハーフブリッジの出力に接続された第2インダクタ、(iii)前記第1インダクタの第2サイドと前記第2インダクタの第2サイドとの間に配置されたノードに接続されたメインインダクタ、を備え、前記メインインダクタのインダクタンスは、前記第1および第2インダクタのインダクタンスよりも大きい
ことを特徴とする請求項15記載の方法。 - 前記第1および第2インダクタは、互いに逆向きに接続されている
ことを特徴とする請求項16記載の方法。 - 前記メインインダクタンスのインダクタンスは、前記第1および第2インダクタのインダクタンスの2倍から10倍の間である
ことを特徴とする請求項16記載の方法。 - 前記第2期間における前記回路のスイッチング損失は、前記第1期間におけるスイッチング損失の約半分である
ことを特徴とする請求項15記載の方法。
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US201562133253P | 2015-03-13 | 2015-03-13 | |
US62/133,253 | 2015-03-13 | ||
PCT/US2016/022214 WO2016149146A1 (en) | 2015-03-13 | 2016-03-11 | Paralleling of switching devices for high power circuits |
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JP6678774B2 (ja) * | 2017-01-11 | 2020-04-08 | 東芝三菱電機産業システム株式会社 | 電力変換装置 |
TWI683522B (zh) * | 2018-10-24 | 2020-01-21 | 林景源 | 高頻分時多相電源轉換器 |
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JP2006187140A (ja) * | 2004-12-28 | 2006-07-13 | Toshiba Corp | コンバータ電源回路 |
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