JP2018037660A - 半導体素子およびこれを含む半導体素子パッケージ - Google Patents

半導体素子およびこれを含む半導体素子パッケージ Download PDF

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JP2018037660A
JP2018037660A JP2017168498A JP2017168498A JP2018037660A JP 2018037660 A JP2018037660 A JP 2018037660A JP 2017168498 A JP2017168498 A JP 2017168498A JP 2017168498 A JP2017168498 A JP 2017168498A JP 2018037660 A JP2018037660 A JP 2018037660A
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semiconductor layer
layer
conductivity type
type semiconductor
conductive
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JP2018037660A5 (https=
Inventor
オ，ヒョンジ
Hyun Jee Oh
チェ，ラクチュン
Rak Jun Choi
キム，ビョンチョ
Byeoung Jo Kim
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LG Innotek Co Ltd
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LG Innotek Co Ltd
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Priority claimed from KR1020160112809A external-priority patent/KR102582184B1/ko
Priority claimed from KR1020160163830A external-priority patent/KR102619743B1/ko
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of JP2018037660A publication Critical patent/JP2018037660A/ja
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    • H01S5/00—Semiconductor lasers
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    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
JP2017168498A 2016-09-01 2017-09-01 半導体素子およびこれを含む半導体素子パッケージ Pending JP2018037660A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2016-0112809 2016-09-01
KR1020160112809A KR102582184B1 (ko) 2016-09-01 2016-09-01 반도체 소자 및 이를 포함하는 반도체 소자 패키지
KR1020160163830A KR102619743B1 (ko) 2016-12-02 2016-12-02 반도체 소자
KR10-2016-0163830 2016-12-02

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Publication Number Publication Date
JP2018037660A true JP2018037660A (ja) 2018-03-08
JP2018037660A5 JP2018037660A5 (https=) 2019-04-18

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JP2017168498A Pending JP2018037660A (ja) 2016-09-01 2017-09-01 半導体素子およびこれを含む半導体素子パッケージ

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Country Link
US (2) US10340415B2 (https=)
EP (2) EP3291314B1 (https=)
JP (1) JP2018037660A (https=)
CN (2) CN107799639B (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200027268A (ko) * 2018-09-04 2020-03-12 엘지이노텍 주식회사 반도체 소자
KR20200033667A (ko) * 2018-09-20 2020-03-30 엘지이노텍 주식회사 발광소자
JP2021057418A (ja) * 2019-09-27 2021-04-08 旭化成株式会社 窒化物半導体素子

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EP3428977A4 (en) 2016-03-08 2019-10-02 ALPAD Corporation Light-emitting semiconducting element and method for producing the same
JP7118427B2 (ja) * 2016-06-20 2022-08-16 スージョウ レキン セミコンダクター カンパニー リミテッド 半導体素子
US10340415B2 (en) 2016-09-01 2019-07-02 Lg Innotek Co., Ltd. Semiconductor device and semiconductor device package including the same
WO2018048275A1 (ko) 2016-09-10 2018-03-15 엘지이노텍 주식회사 반도체 소자
EP3514840A4 (en) * 2016-09-13 2019-08-21 LG Innotek Co., Ltd. SEMICONDUCTOR COMPONENT AND SEMICONDUCTOR COMPONENT HOUSING THEREWITH
US10903395B2 (en) 2016-11-24 2021-01-26 Lg Innotek Co., Ltd. Semiconductor device having varying concentrations of aluminum
KR102390828B1 (ko) 2017-08-14 2022-04-26 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
KR102502335B1 (ko) 2018-04-04 2023-02-22 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
CN108933340A (zh) * 2018-05-25 2018-12-04 宁夏中科天际防雷研究院有限公司 一种抗腐蚀性防雷接地极及其制备方法
KR102575569B1 (ko) * 2018-08-13 2023-09-07 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
US10879419B2 (en) * 2018-08-17 2020-12-29 Seoul Viosys Co., Ltd. Light emitting device
JP7262965B2 (ja) 2018-10-17 2023-04-24 スタンレー電気株式会社 半導体発光素子
CN111668697B (zh) * 2019-03-07 2023-04-18 旭化成株式会社 氮化物半导体元件
US20230238419A1 (en) * 2021-01-21 2023-07-27 Photon Wave Co., Ltd. Ultraviolet light-emitting device
CN114883361A (zh) * 2022-06-06 2022-08-09 Tcl华星光电技术有限公司 显示面板及其制作方法

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JP2013149889A (ja) * 2012-01-23 2013-08-01 Stanley Electric Co Ltd ＧａＮ系半導体発光素子
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