US11227973B2 - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
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- US11227973B2 US11227973B2 US16/766,172 US201816766172A US11227973B2 US 11227973 B2 US11227973 B2 US 11227973B2 US 201816766172 A US201816766172 A US 201816766172A US 11227973 B2 US11227973 B2 US 11227973B2
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- semiconductor layer
- conductive semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 421
- 239000002019 doping agent Substances 0.000 claims abstract description 99
- 229910052782 aluminium Inorganic materials 0.000 claims description 139
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 114
- 239000000203 mixture Substances 0.000 claims description 113
- 239000000758 substrate Substances 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 6
- 230000036961 partial effect Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 396
- 239000000463 material Substances 0.000 description 40
- 230000007423 decrease Effects 0.000 description 32
- 230000000903 blocking effect Effects 0.000 description 27
- -1 GaN and AlGaN Chemical class 0.000 description 24
- 150000002500 ions Chemical group 0.000 description 24
- 238000000034 method Methods 0.000 description 15
- 230000008569 process Effects 0.000 description 14
- 229910002704 AlGaN Inorganic materials 0.000 description 13
- 238000000605 extraction Methods 0.000 description 13
- 238000002347 injection Methods 0.000 description 12
- 239000007924 injection Substances 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 9
- 239000006185 dispersion Substances 0.000 description 9
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 9
- 230000001954 sterilising effect Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 229910052733 gallium Inorganic materials 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
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- 239000002356 single layer Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910019897 RuOx Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008094 contradictory effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 230000003446 memory effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
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- 230000004044 response Effects 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 2
- 238000005011 time of flight secondary ion mass spectroscopy Methods 0.000 description 2
- 238000002042 time-of-flight secondary ion mass spectrometry Methods 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910018229 Al—Ga Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- 229910020776 SixNy Inorganic materials 0.000 description 1
- 229910020781 SixOy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- DZLPZFLXRVRDAE-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] Chemical compound [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] DZLPZFLXRVRDAE-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001819 mass spectrum Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
Definitions
- Embodiments relate to semiconductor devices.
- Semiconductor devices which include compounds such as GaN and AlGaN, have many advantages, e.g., wide and easily controllable bandgap energy, and thus may be variously used in light-emitting elements, light-receiving elements, various diodes, and the like.
- light-emitting elements such as a light-emitting diode or a laser diode using a Group III-V or Group II-VI compound semiconductor material of a semiconductor
- a light-emitting diode or a laser diode using a Group III-V or Group II-VI compound semiconductor material of a semiconductor are capable of not only emitting various color rays, such as red, green, blue, and ultraviolet rays, owing to development of thin-film growth technology and element materials but also emitting high-efficient white light beams using fluorescent materials or combination of colors, and have advantages such as low power consumption, a semi-permanent lifetime, a quick response rate, safety, and environmental friendliness, compared to existing light sources such as fluorescent lamps and incandescent lamps.
- a light-receiving element such as a photodetector or a solar cell
- a Group III-V or Group II-VI compound semiconductor material of a semiconductor photocurrent may be generated by absorbing light in various wavelength regions due to development of device materials so that light in various wavelength ranges ranging from gamma rays to radio wavelength regions may be used.
- semiconductor devices have advantages, e.g., a quick response rate, safety, environmental friendliness, and easy controllability of device materials and thus are easily applicable to power control or microwave circuits or communication modules.
- applications of semiconductor devices have been expanded to a transmission module of an optical communication unit, a light-emitting diode backlight unit which may replace a cold cathode fluorescent lamp (CCFL) of a backlight unit of a liquid crystal display (LCD) device, a white light-emitting diode illumination device which may replace a fluorescent lamp or an incandescent lamp, headlights for vehicles, traffic lights, sensors for sensing gas and fire, and the like.
- applications of semiconductor devices may be expanded to high-frequency application circuits, other power control devices, and communication modules.
- light-emitting elements that emit light in an ultraviolet wavelength region may be used for curing, medical, and sterilization purposes by curing or sterilizing.
- Embodiments provide a semiconductor device having improved ohmic characteristics.
- Embodiments provide a semiconductor device having an improved light output.
- Embodiments provide a vertical ultraviolet light-emitting element.
- a semiconductor device includes a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the semiconductor structure further includes a third conductive semiconductor layer between the second conductive semiconductor layer and the second electrode, the first conductive semiconductor layer includes a first dopant, the second conductive semiconductor layer includes a second dopant, the third conductive semiconductor layer includes the first dopant and the second dopant, and a concentration ratio between the first dopant and the second dopant which are doped on the third conductive semiconductor layer is in a range of 0.01:1.0 to 0.8:1.0.
- ohmic characteristics can be improved to decrease an operating voltage.
- light absorption can be suppressed in a semiconductor device to improve light output.
- FIG. 1 is a conceptual diagram of a semiconductor structure according to a first embodiment of the present invention.
- FIG. 2A is a graph showing an aluminum composition ratio of the semiconductor structure according to the first embodiment of the present invention.
- FIG. 2B illustrates secondary ion mass spectrometry (SIMS) data of the semiconductor structure according to the first embodiment of the present invention.
- FIG. 2C is a graph showing the strength of aluminum ions.
- FIG. 3 is a graph showing an aluminum composition ratio of a semiconductor structure according to a second embodiment of the present invention.
- FIG. 4 is a graph showing an aluminum composition ratio of a semiconductor structure according to a third embodiment of the present invention.
- FIG. 5 is a graph showing an aluminum composition ratio of a semiconductor structure according to a fourth embodiment of the present invention.
- FIG. 6 is a conceptual diagram of a semiconductor device according to an embodiment of the present invention.
- FIGS. 7A and 7B are diagrams for describing a configuration in which light output is improved according to the number of recesses.
- FIG. 8 is an enlarged view of part A of FIG. 6 .
- FIG. 9 is a conceptual diagram of a semiconductor device according to another embodiment of the present invention.
- FIG. 10 is a plan view of FIG. 9 .
- FIG. 11 is a conceptual diagram of a semiconductor device package according to an embodiment of the present invention.
- FIG. 12 is a plan view of a semiconductor device according to an embodiment of the present invention.
- FIG. 13 is a modified example of FIG. 12 .
- FIG. 1 is a conceptual diagram of a semiconductor structure according to an embodiment of the present invention.
- FIG. 2A is a graph showing an aluminum composition ratio of a semiconductor structure according to an embodiment of the present invention.
- FIG. 2B illustrates secondary ion mass spectrometry (SIMS) data of a semiconductor structure according to an embodiment of the present invention.
- SIMS secondary ion mass spectrometry
- the semiconductor device includes a semiconductor structure 120 which includes a first conductive semiconductor layer 124 , a second conductive semiconductor layer 127 , and an active layer 126 between the first conductive semiconductor layer 124 and the second conductive semiconductor layer 127 .
- the semiconductor structure 120 may output light in an ultraviolet wavelength range.
- the semiconductor structure 120 may output light (UV-A) in a near-ultraviolet wavelength range, light (UV-B) in a far-ultraviolet wavelength range, and light (UV-C) in a deep-ultraviolet wavelength range.
- a wavelength range may be determined by an aluminum composition ratio of the semiconductor structure 120 .
- the light (UV-A) in the near-ultraviolet wavelength range may have a wavelength of 320 nm to 420 nm
- the light (UV-B) in the far-ultraviolet wavelength range may have a wavelength of 280 nm to 320 nm
- the light (UV-C) of the deep-ultraviolet wavelength range may have a wavelength of 100 nm to 280 nm.
- each semiconductor layer of the semiconductor structure 120 includes an Inx1Aly1Gal-x1-y1N material containing aluminum (here, 0 ⁇ x1 ⁇ 1, 0 ⁇ y1 ⁇ 1, 0 ⁇ x1+y1 ⁇ 1).
- the composition of Al may be represented by a ratio of the atomic weight of Al to a total atomic weight including the atomic weight of In, the atomic weight of Ga, and the atomic weight of Al.
- the composition of Al is 40%, the composition of Ga may be 60%, and such a composition ratio may be represented by Al40Ga60N.
- a low composition or a high composition may be understood to mean the difference (% point) between compositions (%) of respective semiconductor layers.
- % point for example, when an aluminum composition in a first semiconductor layer is 30% and an aluminum composition in a second semiconductor layer is 60%, it may be described that the aluminum composition in the second semiconductor layer is 30% higher than that in the first semiconductor layer.
- the first conductive semiconductor layer 124 may be a Group III-V compound semiconductor or a Group II-VI compound semiconductor and may be doped with a first dopant.
- the first conductive semiconductor layer 124 may be selected from among semiconductor materials having an empirical formula of Inx1Aly1Gal-x1-y1N (here, 0 ⁇ x1 ⁇ 1, 0 ⁇ y1 ⁇ 1, 0 ⁇ x1+y1 ⁇ 1), e.g., GaN, AlGaN, InGaN, or InAlGaN.
- the first dopant may be an n-type dopant such as Si, Ge, Sn, Se, or Te.
- the first conductive semiconductor layer 124 doped with the first dopant may be an n-type semiconductor layer.
- the first conductive semiconductor layer 124 may include a first-first conductive semiconductor layer 124 a , a first-second conductive semiconductor layer 124 b , and an intermediate layer 124 c between the first-first conductive semiconductor layer 124 a and the first-second conductive semiconductor layers 124 b.
- the first-second conductive semiconductor layer 124 b may be disposed closer to the active layer 126 than the first-first conductive semiconductor layer 124 a .
- An aluminum composition in the first-second conductive semiconductor layer 124 b may be the same as or lower than that in the first-first conductive semiconductor layer 124 a.
- the aluminum composition in the first-second conductive semiconductor layer 124 b may be in a range of 40% to 70%, and the aluminum composition in the first-first conductive semiconductor layer 124 a may be in a range of 50% to 80%.
- the aluminum composition in the first-second conductive semiconductor layer 124 b is 40% or more, light extraction efficiency may be improved by lowering an absorption rate of light (UV-C) in the deep-ultraviolet wavelength range emitted from the active layer 126 .
- the aluminum composition in the first-second conductive semiconductor layer 124 b is 70% or less, a rate of injection of a current into the active layer 126 and a current diffusion rate in the first-second conductive semiconductor layer 124 b may be secured.
- the aluminum composition in the first-first conductive semiconductor layer 1241 is 50% or more, light extraction efficiency may be improved by lowering an absorption rate of light (UV-C) in the deep-ultraviolet wavelength range emitted from the active layer 126 .
- UV-C absorption rate of light
- the aluminum composition in the first-first conductive semiconductor layer 1241 is 80% or less, a feature of injection of a current into the active layer 126 and a feature of diffusing a current in the first-first conductive semiconductor layer 124 a may be secured.
- the aluminum composition in the first-first conductive semiconductor layer 124 a may be higher than that in the first-second conductive semiconductor layer 124 b . In this case, light may be more likely to be extracted from the active layer 126 to the outside of the semiconductor structure 120 due to a refractive index difference and thus light extraction efficiency of the semiconductor structure 120 may be improved.
- a thickness of the first-second conductive semiconductor layer 124 b may be less than that of the first-first conductive semiconductor layer 124 a .
- the thickness of the first-first conductive semiconductor layer 124 a may be greater by 130% or more than that of the first-second conductive semiconductor layer 124 b .
- the intermediate layer 124 c is disposed after securing a sufficient thickness of the first-first conductive semiconductor layer 124 a having a high aluminum composition and thus crystallinity of the entire semiconductor structure 120 may be improved.
- the aluminum composition in the intermediate layer 124 c may be lower than those of the first conductive semiconductor layer 124 and the second conductive semiconductor layer 127 .
- the intermediate layer 124 c may prevent the active layer 126 from being damaged by absorbing laser light emitted to the semiconductor structure 120 during a laser lift-off (LLO) process of removing a grown substrate. Therefore, the semiconductor device according to the embodiment may prevent damage to the active layer 126 during the LLO process, thereby improving optical and electrical characteristics.
- LLO laser lift-off
- a thickness of the intermediate layer 124 c and the aluminum composition therein may be appropriately adjusted to absorb laser light emitted to the semiconductor structure 120 during the LLO process. Therefore, the aluminum composition in the intermediate layer 124 c may correspond to a wavelength of laser light used in the LLO process.
- the wavelength of the laser light used in the LLO process is in a range of 200 nm to 300 nm
- the aluminum composition in the intermediate layer 124 c may be in a range of 30% to 60% and the thickness thereof may be in a range of 1 nm to 10 nm.
- the aluminum composition in the intermediate layer 124 c may be increased to 50% to 70%.
- the intermediate layer 124 c may not absorb light emitted from the active layer 126 . Therefore, light extraction efficiency may be improved.
- a control layer 124 d may be disposed between the first-second conductive semiconductor layer 124 b and the active layer 126 .
- the control layer 124 d may decrease the intensity of first carrier energy injected from the first conductive semiconductor layer 124 toward the active layer to adjust balance of the concentrations or densities of a first carrier and a second carrier. Therefore, luminous efficiency may be improved to improve light output characteristics of the semiconductor device.
- the aluminum composition in the control layer 124 d may be higher than aluminum compositions of the first conductive semiconductor layer 124 , the active layer 126 , and the second conductive semiconductor layer 127 .
- the active layer 126 may be disposed between the first conductive semiconductor layer 124 and a second conductive semiconductor layer 127 .
- the active layer 126 is a layer at which electrons (or holes) injected via the first conductive semiconductor layer 121 and holes (or electrons) injected via the second conductive semiconductor layer 123 meet.
- the active layer 126 may change to a low energy level and generate light having an ultraviolet wavelength as the electrons and the holes are recombined.
- the active layer 122 may have, but is not limited to, a single well structure, a multi-well structure, a single quantum well structure, a multi-quantum well (MQW) structure, a quantum dot structure, or a proton beam structure.
- a single well structure a multi-well structure
- a single quantum well structure a multi-quantum well (MQW) structure
- a quantum dot structure a proton beam structure.
- the active layer 126 may include a plurality of well layers 126 a and a plurality of barrier layers 126 b .
- the well layer 126 a and the barrier layer 126 b may have an empirical formula of Inx2Aly2Gal-x2-y2N (here, 0 ⁇ x2 ⁇ 1, 0 ⁇ y2 ⁇ 1, 0 ⁇ x2+y2 ⁇ 1).
- the aluminum composition in the well layer 126 a may vary according to a wavelength of emitted light.
- the second conductive semiconductor layer 127 may be provided on the active layer 126 , embodied as a Group III-V or II-VI compound semiconductor, and doped with a second dopant.
- the second conductive semiconductor layer 127 may be formed of a semiconductor material having an empirical formula of Inx5Aly2Gal-x5-y2N (here, 0 ⁇ x5 ⁇ 1, 0 ⁇ y2 ⁇ 1, 0 ⁇ x5+y2 ⁇ 1) or a material selected from among AlGaN, AlInN, AlN, AlGaAs, and AlGaInP.
- the second conductive semiconductor layer 127 doped with the second dopant may be a p-type semiconductor layer.
- An electron blocking layer 129 may be provided between the active layer 126 and the second conductive semiconductor layer 127 .
- the electron blocking layer 129 may block the flow of carriers supplied from the first conductive semiconductor layer 124 to the second conductive semiconductor layer 127 , thereby increasing a probability of recombination of electrons and holes in the active layer 126 .
- An energy bandgap of the electron blocking layer 129 may be greater than that of the active layer 126 and/or the second conductive semiconductor layer 127 .
- the electron blocking layer 129 is doped with the second dopant and thus may be defined as a region of the second conductive semiconductor layer 127 .
- the electron blocking layer 129 may be selected from among semiconductor materials having an empirical formula of Inx1Aly1Gal-x1-y1N (here, 0 ⁇ x1 ⁇ 1, 0 ⁇ y1 ⁇ 1, 0 ⁇ x1+y1 ⁇ 1), e.g., AlGaN, AlN, and InAlGaN.
- all of the first conductive semiconductor layer 124 , the active layer 126 , the electron blocking layer 129 , the second conductive semiconductor layer 127 , and a third conductive semiconductor layer 128 may include aluminum. Accordingly, the first conductive semiconductor layer 124 , the active layer 126 , the electron blocking layer 129 , the second conductive semiconductor layer 127 , and the third conductive semiconductor layer 128 may include an AlGaN, InAlGaN, or AlN composition.
- the aluminum composition in the electron blocking layer 129 may be in a range of 50% to 100%. When aluminum composition in the electron blocking layer 129 is less than 50%, the electron blocking layer 129 may have a sufficient energy barrier to block the movement of carriers and may not absorb light emitted from the active layer 126 .
- the electron blocking layer 129 may include a first blocking section 129 a and a second blocking section 129 b .
- the aluminum composition in the first blocking section 129 a may increase in a direction from the first conductive semiconductor layer 124 toward the second conductive semiconductor layer 127 .
- the aluminum composition in the first blocking section 129 a may be in a range of 80% to 100%. Therefore, the aluminum composition in the first blocking section 129 a of the electron blocking layer 129 may be highest in the semiconductor structure 120 .
- the first blocking section 129 a may be AlGaN or AlN. Alternatively, the first blocking section 129 a may be a superlattice layer in which AlGaN and AlN are alternately arranged.
- the first blocking section 129 a may have a thickness of about 0.1 nm to 4 nm. To effectively block the movement of carriers (e.g., electrons), the thickness of the first blocking section 129 a may be set to 0.1 nm or more. To secure injection efficiency of carriers (e.g., holes) from the second conductive semiconductor layer 127 to the active layer 126 , the thickness of the first blocking section 129 a may be set to 4 nm or less.
- carriers e.g., electrons
- a third blocking section 129 c between the first blocking section 129 a and the second blocking section 129 b may include an undoped section that does not include a dopant. Therefore, the third blocking section 129 c may prevent diffusion of a dopant from the second conductive semiconductor layer 127 to the active layer 126 .
- the second conductive semiconductor layer 127 may include a second-first conductive semiconductor layer 127 a and a second-second conductive semiconductor layer 127 b.
- a thickness of the second-first conductive semiconductor layer 127 a may be greater than 10 nm and less than 50 nm.
- the second-first conductive semiconductor layer 127 a may have a thickness of 25 nm.
- a resistance in a horizontal direction decreases and thus current diffusion efficiency may be improved.
- a path in which light incident on the second-first conductive semiconductor layer 127 a from the active layer 126 is absorbed may decrease and light extraction efficiency of the semiconductor device may be improved.
- the aluminum composition in the second-first conductive semiconductor layer 127 a may be higher than that of in the well layer 126 a .
- the aluminum composition in the well layer 126 a may be in a range of about 20% to 60% to generate deep-ultraviolet light or far-ultraviolet light. Therefore, the aluminum composition in the second-first conductive semiconductor layer 127 a may be greater than 40% and less than 80%. For example, when the aluminum composition in the well layer 126 a is 30%, the aluminum composition in the second-first conductive semiconductor layer 127 a may be 40%.
- the second-second conductive semiconductor layer 127 b has a relatively uniform aluminum composition and thus the hole injection efficiency or crystallinity of the semiconductor structure 120 may be improved.
- the thickness of the second-second conductive semiconductor layer 127 b may be in a range of 20 nm to 60 nm.
- the aluminum composition in the second-second conductive semiconductor layer 127 b may be in a range of 40% to 80%.
- the third conductive semiconductor layer 128 may be provided on the second conductive semiconductor layer 127 .
- the third conductive semiconductor layer 128 may be a surface region of the semiconductor structure 120 in contact with a second electrode.
- a current may be injected into the third conductive semiconductor layer 128 through the second electrode, and current injection efficiency may be controlled by a resistance between the third conductive semiconductor layer 128 and the second electrode.
- the resistance between the third conductive semiconductor layer 128 and the second electrode may be caused by one or more actions such as an ohmic contact, a Schottky contact, or a tunnel effect but is not limited thereto.
- the third conductive semiconductor layer 128 may be a Group III-V compound semiconductor or a Group II-VI compound semiconductor and may be doped with the first dopant.
- the third conductive semiconductor layer 128 may be selected from among semiconductor materials having an empirical formula of Inx1Aly1Gal-x1-y1N (here, 0 ⁇ x1 ⁇ 1, 0 ⁇ y1 ⁇ 1, 0 ⁇ x1+y1 ⁇ 1), e.g., AlGaN, InAlGaN, and AN.
- the first dopant may be an n-type dopant such as Si, Ge, Sn, Se, or Te. That is, the third conductive semiconductor layer 128 may be the same n-type semiconductor layer as the first conductive semiconductor layer 124 .
- the third conductive semiconductor layer 128 may include both the first dopant and the second dopant.
- the first dopant of the third conductive semiconductor layer 128 may be intentionally doped but the second dopant thereof may be a result of diffusing the second dopant doped onto the second conductive semiconductor layer 127 .
- embodiments are not limited thereto, and both the first dopant and the second dopant may be intentionally doped on the third conductive semiconductor layer 128 to activate holes.
- a doping concentration of the second dopant may be higher than that of the first dopant due to a memory effect.
- a concentration ratio between the first dopant and the second dopant which are doped on the third conductive semiconductor layer 128 may be 0.01:1.0 or 0.8:1.0.
- concentration ratio is greater than 0.01:1.0, the concentration of the first dopant increases and thus the ohmic resistance may decrease due to a tunnel effect.
- the third conductive semiconductor layer 128 is a very thin film and thus is difficult to dope such that the concentration ratio is greater than 0.8:1.0.
- the concentration of the first dopant of the third conductive semiconductor layer 128 may be 1 ⁇ 1018 cm-3 or 2 ⁇ 1020 cm-3.
- the concentration of the second dopant of the third conductive semiconductor layer 128 may be 1 ⁇ 1019 cm-3 or 2 ⁇ 1021 cm-3.
- the concentration of the first dopant of the third conductive semiconductor layer 128 may be equal to or higher than that of the first dopant of the first conductive semiconductor layer 124 and that of the first dopant on the barrier layer 126 b.
- the third conductive semiconductor layer 128 may have a thickness of 1 nm to 10 nm. When the thickness of the third conductive semiconductor layer 128 is greater than 10 nm, hole injection efficiency may decrease. Therefore, the thickness of the third conductive semiconductor layer 128 may be less than those of the first conductive semiconductor layer 124 and the second conductive semiconductor layer 127 .
- the hole injection efficiency of third conductive semiconductor layer 128 may improve due to the tunnel effect and thus the aluminum composition therein may be controlled to be higher than that of the well layer 126 a.
- the aluminum composition in the third conductive semiconductor layer 128 may be in a range of 20% to 70%.
- the difference in aluminum composition between the third conductive semiconductor layer 128 and the well layer 126 a may decrease, thereby improving light absorption.
- an operating voltage may increase and thus the light output may be improved.
- the aluminum composition in the second conductive semiconductor layer 127 may be uniform in the second-second conductive semiconductor layer 127 b in a direction away from the active layer 126 and may gradually decrease in the second-first conductive semiconductor layer 127 a .
- the aluminum composition in the third conductive semiconductor layer 128 may also decrease in a thickness direction.
- a degree of reduction of the aluminum composition in the second-first conductive semiconductor layer 127 a may be different from or the same as that of the aluminum composition in the third conductive semiconductor layer 128 .
- embodiments are not limited thereto and the aluminum composition in the third conductive semiconductor layer 128 may be uniform.
- an aluminum composition P 3 in the third conductive semiconductor layer 128 may be less than an aluminum composition P 10 in the well layer and an aluminum composition P 4 in the intermediate layer. In this case, an ohmic resistance with the second electrode may be effectively lowered.
- embodiments are not limited thereto, and an aluminum composition in the third conductive semiconductor layer 128 may be variously changed as described below.
- FIG. 2B illustrates SIMS data of a semiconductor structure according to a first embodiment of the present invention.
- FIG. 2C is a graph showing the strength of aluminum ions.
- the compositions of aluminum (Al), gallium (Ga), a first dopant, and a second dopant may change in a direction from a first conductive semiconductor layer 124 to a second conductive semiconductor layer 127 .
- the first dopant may be silicon (Si) and the second dopant may be magnesium (Mg), but they are not limited thereto.
- the SIMS data may be analysis data obtained by Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS).
- SIMS data may be an analysis result obtained by counting the number of secondary ions released when primary ions are emitted to a surface of a target.
- the primary ions may be selected from O2+, Cs+, Bi+, etc.
- an acceleration voltage may be adjusted to be in a range of 20 to 30 keV
- a current to be emitted may be adjusted to be in a range of 0.1 pA to 5.0 pA
- an area of the target to which current is to be emitted may be 20 nm ⁇ 20 nm.
- the SIMS data may be obtained by collecting secondary ion mass spectrums while gradually etching a surface S 0 (a point having a depth of zero) of the second conductive semiconductor layer 127 toward the first conductive semiconductor layer 124 .
- the secondary ions may be components of a semiconductor layer.
- the secondary ions may be aluminum, gallium, a first dopant, or a second dopant but is not limited thereto.
- embodiments are not limited thereto, and measurement conditions for detecting AlGaN-based and/or GaN-based semiconductor materials and first and second dopant materials may be variously used.
- a result of a SIMS analysis may be interpreted using a spectrum of the intensity or doping concentration of the secondary ions, in which generated noise, the intensity or concentration of which is 0.9 to 1.1 times the intensity or doping concentration of the secondary ions, may be considered in the interpretation of the intensity or doping concentration of the secondary ions.
- the term “equal/same” may be understood to include noise, the intensity of which is 0.9 to 1.1 times the intensity or doping concentration of a specific secondary ion.
- the doping concentration of and the intensity of the secondary ions at each point may refer to a highest point of noise that is increasing or decreasing.
- FIG. 2B is a graph showing the SIMS data and doping concentration data in one drawing.
- FIG. 2B illustrates that parts of the spectrum of the intensity of aluminum ions and the spectrums of the concentrations of the first and second dopants cross one another, data of the intensity of aluminum ions and the concentrations of the first and second dopants may be in an independent relationship with one another.
- the graph of doping concentration on the data may decrease when a reference point (a lowest point on a Y-axis of a left part of the drawing) of the doping concentration is set to be low.
- a reference point of the doping concentration of the second dopant is reduced from 1.00E+14 to 1.00E+12
- the graph of the concentration of the second dopant decreases in the drawing and thus data of the second dopant and data of aluminum may not cross each other.
- a method of measuring the concentrations of the first dopant and the second dopant is not particularly limited.
- a vertical axis (the Y-axis) is illustrated by converting it into a logarithmic scale.
- the intensity of aluminum ions gradually increases as a depth in a surface thereof increases and then repeatedly increases and decreases after a highest intensity point.
- an Al atom replaces a Ga atom to form an AlGaN material and thus, although not shown, the intensity of gallium ions may be symmetrical to that of aluminum ions.
- the intensity of ions may increase or decrease according to measurement conditions.
- a graph of the intensity of secondary ions may increase when the intensity of primary ions increases and decrease when the intensity of primary ions decreases when taken as a whole. Therefore, a change in the intensity of ions in a thickness direction may be similar even when the measurement conditions are changed.
- the intensity of aluminum ions at a first point P 1 may be highest in the semiconductor structure 120 .
- the intensity of aluminum ions is highest and thus non-luminescent recombination of a first carrier with a second carrier in a second conductive semiconductor layer may be prevented. Therefore, a light output of the semiconductor device may be improved.
- the first point P 1 may be a region corresponding to a first-first section 129 a of a blocking layer 129 but is not limited thereto.
- the intensity of secondary ions at a second point P 2 may be a point at which the intensity of aluminum ions is highest among points on the intensity of aluminum ions which extend from the first point P 1 in a first direction D 2 .
- the second point P 2 may be a point at which the intensity of aluminum ions in the first conductive semiconductor layer 124 is highest and be closest to the active layer 126 in the first conductive semiconductor layer 124 .
- the second point P 2 may be the control layer of FIG. 2A . However, embodiments are not limited thereto and the second point P 2 may be a point between the first conductive semiconductor layer 124 and the active layer 126 .
- the intensity of third ions at a third point P 3 may be a point at which the intensity of aluminum ions is lowest in a direction D 1 from the first point P 1 toward the surface of the semiconductor structure 120 .
- the third point P 3 may refer to the intensity of ions at the surface of the semiconductor structure.
- an AlGaN composition may be formed on the surface of the semiconductor structure and thus extraction efficiency of ultraviolet light may be improved.
- the intensity of fourth ions at a fourth point P 4 may be a point at which the intensity of aluminum ions is lowest in the first direction D 2 from the second point P 2 .
- the fourth point P 4 may absorb laser light not to penetrate into an active layer to prevent damage to the active layer when a Laser Lift-Off process (hereinafter referred to as LLO) process is applied during a semiconductor device process.
- LLO Laser Lift-Off process
- a resistance between the first electrode and the fourth point P 4 may be decreased to improve the efficiency of injecting a current into the semiconductor structure.
- the intensity of aluminum ions at the fourth point P 4 may be lowest in the first direction D 2 from the second point P 2 .
- a fifth point P 5 may be located between the second point P 2 and the fourth point P 4 .
- the intensity of aluminum ions at the fifth point P 5 may be an intensity of ions between those of the second point P 2 and the fourth point P 4 .
- the fifth point P 5 may be one specific point and may constitute one layer.
- a current injected through the fourth point P 4 may be uniformly distributed in a layer including the fifth point P 5 so that the density of the current injected into the active layer per area may be improved to be uniform.
- a tenth point P 10 may be located between the first point P 1 and the third point P 3 and have the intensity of aluminum ions that is the same as a point having the smallest intensity of ions between the first point P 1 and the second point P 2 . That is, the tenth point P 10 may have the same intensity of ions as a well layer.
- An eleventh point P 11 may be spaced apart from the fourth point P 4 in the first direction D 2 .
- a twelfth section P 12 and a thirteenth section P 13 in which aluminum ions increase in the first direction D 2 may be provided.
- the first dopant may not be doped in the thirteenth section P 13 .
- a doping curve of the first dopant may be uniform in a first section S 1 in which a first conductive semiconductor layer is provided.
- a second section S 2 having a relatively low doping concentration may be located in the first section S 1 of the first conductive semiconductor layer.
- a second section S 2 may be formed as a doping concentration of the first dopant changes due to a change of growth conditions when a composition changes in a direction from a first-first conductive semiconductor layer to an intermediate layer.
- the second section S 2 may be a point corresponding to the fourth point P 4 of the intensity of aluminum ions.
- a doping curve of the first dopant may have a third section S 3 in which a doping concentration decreases between the first conductive semiconductor layer and the active layer.
- the third section S 3 may be an undoped layer which is not doped with the first dopant.
- the third section S 3 is doped with a relatively small amount of the first dopant and thus may disperse a current due to a high resistance thereof.
- the doping curve of the first dopant may include a fourth section S 4 in which a concentration increases or decreases in the active layer.
- a barrier layer of the active layer may be doped with the first dopant. Therefore, the efficiency of injecting the first carrier into the active layer may be improved and the efficiency of luminous recombination of the first carrier and the second carrier in the active layer may be improved.
- an operating voltage Vf may decrease.
- a peak of the first dopant in the fourth section S 4 may correspond to a peak P 61 of the active layer. The intensity of the peak P 61 of the active layer may be lower than that of a valley P 62 .
- the doping curve of the first dopant may include a fifth section S 5 in which a doping concentration decreases in a second conductive semiconductor layer and a sixth section S 6 in which the doping concentration increases on the surface S 0 .
- the doping concentration on the surface S 0 is similar to or higher than the doping concentration in the first section S 1 . Therefore, in the semiconductor structure according to the embodiment, it can be seen that a surface layer on which the second electrode is disposed is formed of n-AlGaN.
- a doping concentration of the second dopant may be highest at the surface S 0 and gradually decrease in a direction away from the surface S 0 . It can be seen that the doping concentration of the second dopant (e.g., Mg) on the surface S 0 of the semiconductor structure is higher than that of the first dopant (e.g., Si). This may be because the doping concentration of the second dopant increases due to a memory effect although the surface of the semiconductor structure is not doped with the second dopant.
- the doping concentration of the second dopant increases toward the surface S 0 but the second dopant includes a section (a section between points M 2 and M 3 ) in which a doping concentration decreases toward the surface S 0 . Due to this inversion section, the concentration of the second dopant decreases and thus a resistance increases, thereby improving hole dispersion efficiency.
- the second dopant may be present in all regions of the second conductive semiconductor layer and a part of the active layer but is not limited thereto.
- the second dopant may be provided only in the second conductive semiconductor layer but may diffuse to the active layer. Therefore, the efficiency of injecting the second dopant into the active layer may be improved.
- a leakage current of the semiconductor device and/or non-luminous recombination of the first and second carriers may occur, thereby reducing reliability and/or luminous efficiency of the semiconductor device.
- FIG. 3 is a graph showing an aluminum composition ratio of a semiconductor structure according to a second embodiment of the present invention.
- FIG. 4 is a graph showing an aluminum composition ratio of a semiconductor structure according to a third embodiment of the present invention.
- FIG. 5 is a graph showing an aluminum composition ratio of a semiconductor structure according to a fourth embodiment of the present invention.
- an aluminum composition P 3 in a third conductive semiconductor layer 128 is higher than an aluminum composition P 1 in a well layer 126 a and lower than an aluminum composition P 4 in an intermediate layer 124 c .
- the aluminum composition P 1 in the well layer 126 a may be controlled according to a wavelength of light to be generated.
- an aluminum composition for generating UVB wavelength may be in a range of 20% to 30%
- an aluminum composition for generating UVC wavelength may be in a range of 30% to 50%.
- a light absorption characteristic of the third conductive semiconductor layer 128 may be improved.
- the aluminum composition P 4 in the intermediate layer 124 c may be in a range of 50% to 70%. Therefore, when the aluminum composition P 3 in the third conductive semiconductor layer 128 is set to be lower than the aluminum composition P 4 in the intermediate layer 124 c , an excessive increase of an operation voltage may be prevented.
- hole injection efficiency is improved even when an aluminum composition increases due to the tunnel effect, and thus, a light absorption rate may be improved by increasing the aluminum composition P 3 in the third conductive semiconductor layer 128 to be higher than the aluminum composition P 1 in the well layer 126 a.
- an aluminum composition in the third conductive semiconductor layer 128 be lower in terms of ohmic characteristics and be higher in terms of light absorption. Accordingly, the aluminum composition P 3 in the third conductive semiconductor layer 128 may be controlled to be higher than the aluminum composition P 1 in the well layer and be lower than the aluminum composition P 4 in a second conductive semiconductor layer 127 or the intermediate layer 124 c . In this case, a second-first conductive semiconductor layer 127 a may have a slope such that the aluminum composition continuously changes.
- the aluminum composition P 3 in the third conductive semiconductor layer 128 and the aluminum composition P 4 in the second conductive semiconductor layer 127 may change intermittently.
- the third conductive semiconductor layer 128 may be formed without reducing an aluminum composition.
- a second conductive semiconductor layer 127 and a third conductive semiconductor layer 128 may be the same in terms of an aluminum composition. As described above, hole injection efficiency of the third conductive semiconductor layer 128 may be improved due to the tunnel effect even when the aluminum composition increases. Accordingly, it may be preferable that the second conductive semiconductor layer 127 and the third conductive semiconductor layer 128 be controlled to have the same aluminum composition in terms of light extraction.
- a doping concentration of a dopant may be maximized and a thickness of the third conductive semiconductor layer 128 may be minimized.
- FIG. 6 is a conceptual diagram of a semiconductor device according to an embodiment of the present invention.
- FIGS. 7A and 7B are diagrams for describing a configuration in which the light output is improved according to the number of recesses.
- FIG. 8 is an enlarged view of part A of FIG. 6 .
- the semiconductor device includes a semiconductor structure 120 , which includes a first conductive semiconductor layer 124 , a second conductive semiconductor layer 127 , and an active layer 126 , a first electrode 142 electrically connected to the first conductive semiconductor layer 124 , and a second electrode 146 electrically connected to the second conductive semiconductor layer 127 .
- the first conductive semiconductor layer 124 , the active layer 126 , and the second conductive semiconductor layer 127 may be disposed in a first direction (a Y-axis direction).
- first direction which is a thickness direction of each layer
- second direction X-axis direction perpendicular to the first direction (Y-axis direction) will be defined as a horizontal direction.
- the semiconductor structure 120 may include a plurality of recesses R 1 passing through the second conductive semiconductor layer 127 and the active layer 126 and may extend to a partial region of the first conductive semiconductor layer 124 .
- the first electrode 142 may be disposed on an upper surface of the recess R 1 to be electrically connected to the first conductive semiconductor layer 124 .
- the second electrode 146 may be disposed under the second conductive semiconductor layer 127 .
- the first electrode 142 and the second electrode 146 may be ohmic electrodes.
- the first electrode 142 and the second electrode 146 may be formed of, but are not limited to, at least one among indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZO nitride (IZON), Al—Ga ZnO (AGZO), In—Ga ZnO (IGZO), ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt, Au,
- the semiconductor structure 120 when a GaN-based semiconductor structure 120 emits ultraviolet rays, the semiconductor structure 120 may include aluminum, and when an aluminum composition of the semiconductor structure 120 is increased, current dispersion characteristics in the semiconductor structure 120 may be degraded.
- the active layer 126 includes Al and emits ultraviolet rays, the amount of light emitting from side surfaces of the active layer 126 is higher than that in a GaN-based blue-light-emitting element (TM mode).
- TM mode may occur mainly in an ultraviolet semiconductor device.
- the effective light-emitting region P 2 may be defined as a region ranging to a boundary point at which current density is 40% or less with respect to a current density at the center of the first electrode 142 having highest current density.
- the effective light-emitting region P 2 may be adjusted according to a level of an injected current and the composition of aluminum within a range of 40 ⁇ m from the center of the recess R 1 .
- a low current density region P 3 has low current density and thus the amount of light emitted therefrom may be less than that emitted from the effective light emission region P 2 . Accordingly, the light output may be improved by further arranging a first electrode 142 in the low current density region P 3 having low current density or using a reflective structure.
- current dispersion characteristics of a GaN-based semiconductor device that emits blue light are relatively good and thus areas of the recess R 1 and the first electrode 142 are preferably minimized. This is because the area of the active layer 126 decreases as the areas of the recess R 1 and the first electrode 142 increase.
- the composition of aluminum is high and thus current dispersion characteristics are relatively poor, and thus, even when the area of the active layer 126 is sacrificed, it may be desirable to reduce the low current density area P 3 in size by increasing the area and/or number of the first electrodes 142 or to dispose a reflective structure in the low current density region P 3 .
- the recesses R 1 when the number of recesses R 1 is increased to 48, the recesses R 1 may not be arranged in a straight line in horizontal and vertical directions but may be arranged in a zigzag manner. In this case, the area of the low current density region P 3 may be reduced and thus most of the active layer 126 may participate in light emission.
- current dispersion characteristics may be degraded in the semiconductor structure 120 , and thus, it is necessary to smoothly inject a current so as to secure uniform current density characteristics in the semiconductor structure 120 , thereby achieving electrical and optical characteristics and reliability of the semiconductor device. Therefore, for smooth current injection, a relatively large number of recesses R 1 may be formed to arrange the first electrodes 142 as compared to a general GaN-based semiconductor structure 120 .
- a first insulating layer 131 may electrically insulate the first electrode 142 from the active layer 126 and the second conductive semiconductor layer 127 .
- the first insulating layer 131 may electrically insulate the second electrode 146 and a second conductive layer 150 from a first conductive layer 165 .
- the first insulating layer 131 may prevent side surfaces of the active layer 126 from being oxidized during a process of the semiconductor device.
- the first insulating layer 131 may be formed of, but is not limited to, at least one material selected from the group consisting of SiO2, SixOy, Si3N4, SixNy, SiOxNy, Al2O3, TiO2, AlN, etc.
- the first insulating layer 131 may be formed in a single layer or multiple layers.
- the first insulating layer 131 may be a distributed Bragg reflector (DBR) having a multilayer structure including Si oxide or a Ti compound.
- DBR distributed Bragg reflector
- embodiments are not limited thereto and the first insulating layer 131 may include various types of reflective structures.
- the first insulating layer 131 When the first insulating layer 131 performs a reflective function, light extraction efficiency may be improved by reflecting light L 1 , which is emitted from the active layer 126 toward a side surface of the first insulating layer 131 , in an upward direction. In this case, as the number of recesses R 1 increases, the light extraction efficiency may be more effective.
- a diameter W 3 of the first electrode 142 may be in a range of 24 ⁇ m to 50 ⁇ m. When this range is satisfied, current dispersion may be easily performed and a large number of first electrodes 142 may be disposed. When the diameter W 3 of the first electrode 142 is greater than 24 ⁇ m, the amount of current injected into the first conductive semiconductor layer 124 may be sufficiently secured. When the diameter W 3 of the first electrode 142 is 50 ⁇ m or less, a sufficient number of first electrodes 142 may be disposed in the area of the first conductive semiconductor layer 124 and current dispersion characteristics may be secured.
- a diameter W 1 of the recess R 1 may be in a range of 38 ⁇ m to 60 ⁇ m.
- the diameter W 1 of the recess R 1 may be defined as a largest area of the recess R 1 when disposed under the second conductive semiconductor layer 127 .
- the diameter W 1 of the recess R 1 may be a diameter of the recess R 1 disposed on a bottom surface of the second conductive semiconductor layer 127 .
- the diameter W 1 of the recess R 1 is 38 ⁇ m or more, in order to form the first electrode 142 in the recess R 1 , a process margin for securing an area for electrically connection of the first electrode 142 with the first conductive semiconductor layer 124 may be secured.
- the diameter W 1 of the recess R 1 is 60 ⁇ m or less, a reduction of the volume of the active layer 126 when the first electrode 142 is disposed may be prevented and thus luminous efficiency may be degraded.
- An inclination angle ⁇ 5 of the recess R 1 may be in a range of 70 to 90 degrees. When the area range is satisfied, it may be advantageous to form the first electrode 142 on an upper surface of the recess R 1 and a large number of recesses R 1 may be formed.
- the inclination angle ⁇ 5 When the inclination angle ⁇ 5 is less than 70 degrees, the area of the active layer 126 to be removed may increase but an area in which the first electrode 142 is disposed may decrease. Therefore, a current injection characteristic may decrease and luminous efficiency may decrease. Therefore, a ratio between the areas of the first electrode 142 and the second electrode 146 may be adjusted using the inclination angle ⁇ 5 of the recess R 1 .
- a thickness of the second electrode 146 may be less than that of the first insulating layer 131 . Therefore, step coverage characteristics of the second conductive layer 150 covering the second electrode 146 and a second insulating layer 132 may be secured, and reliability of the semiconductor device may be improved.
- the second electrode 146 may be spaced a first distance S 1 of 1 ⁇ m to 4 ⁇ m from the first insulating layer 131 . When the first distance S 1 is 1 ⁇ m or more, a process margin for a process of arranging the second electrode 146 on a region of the first insulating layer 131 may be secured and thus electrical characteristics, optical characteristics, and reliability of the semiconductor device may be improved. When the first distance S 1 is 4 ⁇ m or less, the entire area in which the second electrode 146 may be disposed may be secured and an operating voltage characteristic of the semiconductor device may be improved.
- the second conductive layer 150 may cover the second electrode 146 . Accordingly, a second electrode pad 166 , the second conductive layer 150 , and the second electrode 146 may form one electrical channel.
- the second conductive layer 150 may be in contact with side surfaces and an upper surface of the first insulating layer 131 while completely surrounding the second electrode 146 .
- the second conductive layer 150 may be formed of a material having good adhesion with the first insulating layer 131 , include at least one material selected from the group consisting of materials, such as Cr, Al, Ti, Ni, Au, etc. and an alloy thereof, and be formed in a single layer or a multilayer.
- the second conductive layer 150 When the second conductive layer 150 is in contact with the side surfaces and the upper surface of the first insulating layer 131 , thermal and electrical reliability of the second electrode 146 may be improved.
- the second conductive layer 150 may have a reflective function of reflecting light emitted between the first insulating layer 131 and the second electrode 146 in an upward direction.
- the second conductive layer 150 may be disposed within the first distance S 1 between the first insulating layer 131 and the second electrode 146 .
- the second conductive layer 150 may be in contact with the side surfaces and the upper surface of the second electrode 146 and the side surfaces and the upper surface of the first insulating layer 131 within the first distance S 1 .
- a region in which a Schottky junction is formed due to a contact between the second conductive layer 150 and the second conductive semiconductor layer 127 may be provided within the first distance S 1 , and current dissipation may be facilitated due to the Schottky junction.
- this region may be freely located, provided that a resistance between the second conductive layer 150 and the second conductive semiconductor layer 127 is higher than a resistance between the second electrode 146 and the second conductive semiconductor layer 127 .
- the second insulating layer 132 may electrically insulate the second electrode 146 and the second conductive layer 150 from the first conductive layer 165 .
- the first conductive layer 165 may pass through the second insulating layer 132 to be electrically connected to the first electrode 142 .
- the second insulating layer 132 and the first insulating layer 131 may be formed of the same material or different materials.
- the second conductive layer 150 may electrically connect the second electrode 146 and the second electrode pad 166 .
- the second electrode 146 may be directly disposed on the second conductive semiconductor layer 127 .
- the second conductive semiconductor layer 127 is formed of AlGaN, hole injection may not be smoothly performed due to low electrical conductivity. Therefore, it is necessary to appropriately adjust an Al composition of the second conductive semiconductor layer 127 . This will be described below.
- the second conductive layer 150 may be formed of at least one material selected from the group consisting of materials, such as Cr, Al, Ti, Ni, Au, etc. and an alloy thereof, and may be formed in a single layer or a multilayer.
- the first conductive layer 165 and a bonding layer 160 may be disposed along the bottom surface of the semiconductor structure 120 and a shape of the recesses R 1 .
- the first conductive layer 165 may be formed of a material having high reflectivity.
- the first conductive layer 165 may include aluminum.
- the electrode layer 165 includes aluminum, the first conductive layer 165 may reflect light, which is emitted from the active layer 126 toward a substrate 170 , in an upward direction, thereby improving light extraction efficiency.
- embodiments are not limited thereto, and the first conductive layer 165 may provide a function of electrically connection to the first electrode 142 .
- the first conductive layer 165 may be disposed without including a material having high reflectivity, e.g., aluminum and/or silver (Ag).
- a reflective metal layer (not shown) formed of a material having high reflectivity may be disposed between the first electrode 142 and the first conductive layer 165 and between the second conductive semiconductor layer 127 and the first conductive layer 165 .
- the bonding layer 160 may include a conductive material.
- the bonding layer 160 may include a material selected from the group consisting of gold, tin, indium, aluminum, silicon, silver, nickel, and copper or an alloy thereof.
- the substrate 170 may be formed of a conductive material.
- the substrate 170 may include a metal or semiconductor material.
- the substrate 170 may be a metal having high electrical conductivity and/or high thermal conductivity. In this case, heat generated during an operation of the semiconductor device may be quickly discharged to the outside.
- the first electrode 142 may be supplied with a current from the outside through the substrate 170 .
- the substrate 170 may include a material selected from the group consisting of silicon, molybdenum, tungsten, copper, and aluminum or an alloy thereof.
- a passivation layer 180 may be disposed on the upper and side surfaces of the semiconductor structure 120 .
- the passivation layer 180 may have a thickness ranging from 200 nm to 500 nm.
- the semiconductor device may be protected from external moisture or foreign materials, thereby improving electrical and optical reliability of the semiconductor device.
- the thickness of the passivation layer 180 is 500 nm or less, stress applied to the semiconductor device may decrease and problems caused by an increase in unit price of the semiconductor device may be reduced when the optical and electrical reliability of the semiconductor device are degraded or a processing time of the semiconductor device increases.
- Irregularities may be formed on the upper surface of the semiconductor structure 120 .
- the irregularities may improve extraction efficiency of light emitted from the semiconductor structure 120 .
- An average height of the irregularities may vary according to an ultraviolet wavelength, and in the case of UV-C, the average height may be in a range of about 300 nm to 800 nm and light extraction efficiency may be improved when the average height is in a range of about 500 nm to 600 nm.
- FIG. 9 is a conceptual diagram of a semiconductor device according to another embodiment of the present invention.
- FIG. 10 is a plan view of FIG. 9 .
- a plurality of recesses R 1 may pass through a second conductive semiconductor layer 127 and an active layer 126 and extend to a partial region of a first conductive semiconductor layer 124 .
- the semiconductor device may include a side reflector Z 1 disposed at an edge thereof.
- the side reflector Z 1 may be obtained by forming a second conductive layer 150 , a first conductive layer 165 , and a substrate 170 to protrude in a thickness direction (a Y-axis direction). Referring to FIG. 10 , the side reflector Z 1 is disposed along the edge of the semiconductor device to surround the semiconductor structure 120 .
- the second conductive layer 150 of the side reflector Z 1 protrudes higher than the active layer 126 to reflect light, which is emitted from the active layer 126 , upward. Therefore, light emitted in the horizontal direction (an X-axis direction) due to the TM mode may be reflected upward at an outermost angle without additionally forming a reflective layer.
- An inclination angle of the side reflector Z 1 may be greater than 90 degrees and less than 145 degrees.
- the inclination angle may be an angle formed by the second conductive layer 150 with a horizontal plane (an XZ plane).
- an XZ plane an XZ plane
- FIG. 11 is a conceptual diagram of a semiconductor device package according to an embodiment of the present invention.
- FIG. 12 is a plan view of a semiconductor device package according to an embodiment of the present invention.
- FIG. 13 is a modified example of FIG. 12 .
- the semiconductor device package may include a body 1 having a groove 3 , a semiconductor device 10 disposed in the body 2 , and a pair of lead frames 5 a and 5 b provided on the body 2 to be electrically connected to the semiconductor device 10 .
- the semiconductor device 10 may include all the above-described configurations.
- the body 2 may include a material or a coating layer that reflects ultraviolet light.
- the body 2 may be formed by stacking a plurality of layers 2 a , 2 b , 2 c , 2 d , and 2 e .
- the plurality of layers 2 a , 2 b , 2 c , 2 d , and 2 e may include the same material or different materials.
- the groove 3 may be formed to be wider in a direction farther from the semiconductor device 10 and include a step 3 a on an inclined surface thereof.
- the groove 3 may be covered with a light-transmitting layer 4 .
- the light-transmitting layer 4 is formed of a glass material but is not necessarily limited thereto.
- the material of the light-transmitting layer 4 is not particularly limited as long as the material is capable of effectively transmitting ultraviolet light.
- the inside of the groove 3 may be an empty space.
- the semiconductor device 10 may be disposed on the first lead frame 5 a and connected to the second lead frame 5 b using wires.
- the second lead frame 5 b may be arranged to surround side surfaces of the first lead frame 5 a.
- a plurality of semiconductor devices 10 a , 10 b , 10 c , and 10 d may be disposed on the semiconductor device package.
- first to fifth lead frames 5 a , 5 b , 5 c , 5 d , and 5 e may be provided.
- the first semiconductor device 10 a may be disposed on the first lead frame 5 a and connected to the second lead frame 5 b using wires.
- the second semiconductor device 10 b may be disposed on the second lead frame 5 b and connected to the third lead frame 5 c using wires.
- the third semiconductor device 10 c may be disposed on the third lead frame 5 c and connected to the fourth lead frame 5 d using wires.
- the fourth semiconductor device 10 d may be disposed on the fourth lead frame 5 d and connected to the fifth lead frame 5 e using wires.
- the semiconductor devices are applicable to various types of light source devices.
- the light source devices may be a concept including a sterilizing device, a curing device, a lighting device, a display device, a vehicle lamp, and the like. That is, the semiconductor devices are applicable to various types of electronic devices each being arranged in a case to provide light.
- the sterilizing device may be provided with a semiconductor device according to an embodiment to sterilize a desired area.
- the sterilizing device is applicable to, but is not limited to, household appliances such as water purifiers, air conditioners, and refrigerators. That is, the sterilizing device is applicable to various products (e.g., medical devices) that are required to be sterilized.
- a water purifier may include a sterilizing device according to an embodiment to sterilize water to circulate.
- the sterilizing device may be disposed on a nozzle or a discharge port through which water circulates to emit ultraviolet rays.
- the sterilizing device may include a waterproof structure.
- the curing device may include a semiconductor device according to an embodiment to cure various types of liquids.
- the liquid may be a broadest concept including all of various materials that are cured when ultraviolet light is emitted thereto.
- the curing device may be used to cure various types of resins.
- the curing device is applicable to curing beauty products such as nail polish.
- the lighting device may include a light source module, which includes a substrate and a semiconductor device according to an embodiment, a heat dissipation unit which dissipates heat from the light source module, and a power supply which processes or converts an electrical signal received from the outside and provides the resultant signal to the light source module.
- the lighting device may include a lamp, a head lamp, a street light, or the like.
- the display device may include a bottom cover, a reflecting plate, a light-emitting module, a light guide plate, an optical sheet, a display panel, an image signal output circuit, and a color filter.
- the bottom cover, the reflecting plate, the light-emitting module, the light guide plate, and the optical sheet may constitute a backlight unit.
- the reflecting plate is disposed on the bottom cover, and the light-emitting module may emit light.
- the light guide plate is disposed in front of the reflecting plate to guide light emitted from the light-emitting module in a forward direction
- the optical sheet may include a prism sheet and the like and be disposed in front of the light-guide plate.
- a display panel is disposed in front of the optical sheet, an image signal output circuit supplies an image signal to the display panel, and a color filter can be disposed in front of the display panel.
- the semiconductor device When a semiconductor device is used as a backlight unit of a display device, the semiconductor device may be used as an edge-type backlight unit or a direct-type backlight unit.
- the semiconductor device may be a laser diode in addition to being the above-described light-emitting diode.
- the laser diode may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer as described above, similar to the light-emitting element.
- the laser diode uses the electro-luminescence phenomenon that light is emitted when a current is supplied after a p-type first conductive semiconductor and an n-type second conductive semiconductor are bonded together but is different from the light-emitting element in terms of the directivity and phase of emitted light. That is, the laser diode may emit light having one specific wavelength (monochromatic beam) to have the same phase in the same direction using the stimulated emission phenomenon and the constructive interference phenomenon. Due to the above characteristics, the laser diode is available for optical communication, medical equipment, semiconductor processing equipment, and the like.
- Examples of the light-receiving element include a photodetector which is a type of transducer that detects light and converts the intensity of the light into an electric signal.
- Examples of the photodetector may include, but are not limited to, a photocell (silicon or selenium), a photoconductive element (cadmium sulfide or cadmium selenide), a photodiode (e.g., a photodiode with a peak wavelength in a visible blind spectral region or a true blind spectral region), a phototransistor, a photomultiplier tube, a phototube (vacuum or gas-filled), an infra-red (IR) detector, and the like.
- a photocell silicon or selenium
- a photoconductive element cadmium sulfide or cadmium selenide
- a photodiode e.g., a photodiode with a peak wavelength in a visible blind
- a semiconductor device such as a photodetector may be manufactured using a direct bandgap semiconductor which generally has high photo-conversion efficiency.
- the photodetector may have various configurations. As photodetectors having most general configurations, there are a pin type photodetector using a p-n junction, a Schottky photodetector using a Schottky junction, a metal-semiconductor-metal (MSM) photodetector, and the like.
- MSM metal-semiconductor-metal
- the photodiode may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer as described above, similar to the light-emitting element, and may have a p-n junction structure or a pin structure.
- the photodiode is operated by applying a reverse bias or a zero bias. When light is incident on the photodiode, electrons and holes are generated and thus a current flows. In this case, the intensity of the current may be substantially proportional to that of the light incident on the photodiode.
- a photocell or a solar cell is a type of photodiode that converts light into a current.
- the solar cell may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer as described above, similar to the light-emitting element.
- the semiconductor device is applicable as a rectifier of an electronic circuit through rectifying characteristic of a general diode using a p-n junction and applicable to an oscillation circuit or the like when applied to a super-high-frequency circuit.
- the semiconductor device is not necessarily formed as a semiconductor and may further include a metal material in some cases.
- a semiconductor device such as a light-receiving element may be formed of at least one of Ag, Al, Au, In, Ga, N, Zn, Se, P, or As, or formed of a semiconductor material doped with a p- or n-type dopant or an intrinsic semiconductor material.
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Abstract
Description
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KR1020170158948A KR102407739B1 (en) | 2017-11-24 | 2017-11-24 | Semiconductor device |
PCT/KR2018/014636 WO2019103556A1 (en) | 2017-11-24 | 2018-11-26 | Semiconductor device |
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JP6824501B2 (en) * | 2017-02-08 | 2021-02-03 | ウシオ電機株式会社 | Semiconductor light emitting device |
JP7312953B2 (en) * | 2020-07-21 | 2023-07-24 | 日亜化学工業株式会社 | Light-emitting element and method for manufacturing light-emitting element |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008160025A (en) | 2006-12-26 | 2008-07-10 | Sharp Corp | Nitride semiconductor light-emitting device |
US20110204403A1 (en) | 2010-04-15 | 2011-08-25 | Sung Kyoon Kim | Light emitting device, light emitting device package, and lighting system |
US20120001196A1 (en) | 2010-07-05 | 2012-01-05 | Lg Innotek Co., Ltd. | Light emitting device, method of manufacturing the same, light emitting device package, and lighting system |
KR20120111364A (en) | 2011-03-31 | 2012-10-10 | 엘지이노텍 주식회사 | Light emitting device and light emitting device package |
US20160111595A1 (en) * | 2014-10-15 | 2016-04-21 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device |
KR20160084992A (en) | 2015-01-07 | 2016-07-15 | 엘지이노텍 주식회사 | Light emitting device |
US11075321B2 (en) * | 2017-12-27 | 2021-07-27 | Suzhou Lekin Semiconductor Co., Ltd. | Semiconductor device |
-
2017
- 2017-11-24 KR KR1020170158948A patent/KR102407739B1/en active IP Right Grant
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2018
- 2018-11-26 US US16/766,172 patent/US11227973B2/en active Active
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Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008160025A (en) | 2006-12-26 | 2008-07-10 | Sharp Corp | Nitride semiconductor light-emitting device |
US20110204403A1 (en) | 2010-04-15 | 2011-08-25 | Sung Kyoon Kim | Light emitting device, light emitting device package, and lighting system |
US20120001196A1 (en) | 2010-07-05 | 2012-01-05 | Lg Innotek Co., Ltd. | Light emitting device, method of manufacturing the same, light emitting device package, and lighting system |
KR20120003774A (en) | 2010-07-05 | 2012-01-11 | 엘지이노텍 주식회사 | Light emitting device and method for fabricating the same, light emitting device package, and lighting system |
KR20120111364A (en) | 2011-03-31 | 2012-10-10 | 엘지이노텍 주식회사 | Light emitting device and light emitting device package |
US20160111595A1 (en) * | 2014-10-15 | 2016-04-21 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device |
KR20160084992A (en) | 2015-01-07 | 2016-07-15 | 엘지이노텍 주식회사 | Light emitting device |
US11075321B2 (en) * | 2017-12-27 | 2021-07-27 | Suzhou Lekin Semiconductor Co., Ltd. | Semiconductor device |
Non-Patent Citations (1)
Title |
---|
International Search Report dated Feb. 28, 2019 issued in Application No. PCT/KR2018/014636. |
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KR20190060598A (en) | 2019-06-03 |
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US20200287076A1 (en) | 2020-09-10 |
KR102407739B1 (en) | 2022-06-10 |
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