KR20190098624A - Semiconductor divece and package including same - Google Patents

Abstract

Disclosed according to an embodiment is a semiconductor device comprising: a first conductive semiconductor layer; an active layer disposed on the first conductive semiconductor layer; a first electron blocking layer disposed on the active layer; a second conductive semiconductor layer disposed on the first electron blocking layer; a second electron blocking layer disposed on the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer. The second conductive semiconductor layer includes: a first point at which the second conductive semiconductor layer and the first electron blocking layer make contact with each other; and a second point at which the second conductive semiconductor layer and the second electron blocking layer make contact with each other. An aluminum composition at the first point is greater than the aluminum composition at the second point. Thus, a light-emitting device having improved light output can be provided.

Description

Semiconductor device and semiconductor device package including the same {SEMICONDUCTOR DIVECE AND PACKAGE INCLUDING SAME}

Embodiments relate to a semiconductor device and a semiconductor device package including the same.

A semiconductor device including a compound such as GaN, AlGaN, etc. has many advantages, such as having a wide and easy-to-adjust band gap energy, and can be used in various ways as a light emitting device, a light receiving device, and various diodes.

Particularly, light emitting devices such as light emitting diodes and laser diodes using semiconductors of Group 3-5 or Group 2-6 compound semiconductors have been developed through the development of thin film growth technology and device materials. Various colors such as blue and ultraviolet light can be realized, and efficient white light can be realized by using fluorescent materials or combining colors.Low power consumption, semi-permanent lifespan, and fast response speed compared to conventional light sources such as fluorescent and incandescent lamps can be realized. It has the advantages of safety, environmental friendliness.

In addition, when a light-receiving device such as a photodetector or a solar cell is also manufactured using a group 3-5 or 2-6 compound semiconductor material of a semiconductor, the development of device materials absorbs light in various wavelength ranges to generate a photocurrent. As a result, light in various wavelengths can be used from gamma rays to radio wavelengths. It also has the advantages of fast response speed, safety, environmental friendliness and easy control of device materials, making it easy to use in power control or microwave circuits or communication modules.

Therefore, the semiconductor device may replace a light emitting diode backlight, a fluorescent lamp, or an incandescent bulb, which replaces a cold cathode tube (CCFL) constituting a backlight module of an optical communication means, a backlight of a liquid crystal display (LCD) display device. Applications are expanding to include white LED lighting devices, automotive headlights and traffic lights, and sensors that detect gas or fire. In addition, the semiconductor device may be extended to high frequency application circuits, other power control devices, and communication modules.

In particular, the light emitting device that emits light in the ultraviolet wavelength region may be used for curing, medical treatment, and sterilization by curing or sterilizing.

Recently, the research on the ultraviolet light emitting device is active, but the ultraviolet light emitting device has a problem that it is difficult to implement a vertical type, and there is a low light output problem.

The embodiment provides a vertical ultraviolet light emitting device.

In addition, a light emitting device having improved light output is provided.

The problem to be solved in the examples is not limited thereto, and the object or effect that can be grasped from the solution means or the embodiment of the problem described below will also be included.

In an embodiment, a semiconductor device may include a first conductivity type semiconductor layer; An active layer disposed on the first conductivity type semiconductor layer; A first electron blocking layer disposed on the active layer; A second conductivity type semiconductor layer disposed on the first electron blocking layer; A second electron blocking layer on the second conductive semiconductor layer; A first electrode electrically connected to the first conductive semiconductor layer; And a second electrode electrically connected to the second conductive semiconductor layer, wherein the second conductive semiconductor layer is a first point at which the second conductive semiconductor layer is in contact with the first electron blocking layer. ; And a second point at which the second conductivity type semiconductor layer and the second electron blocking layer contact each other, wherein the aluminum composition at the first point is greater than the aluminum composition at the second point.

The first electron blocking layer may include: a 1-1 electron blocking layer in contact with the first point and having an aluminum composition increased toward the active layer; And a 1-2 electron blocking layer in contact with the 1-1 electron blocking layer and having a constant aluminum composition.

The first electron blocking layer may include: a first electron blocking layer having the highest aluminum composition in contact with the 1-2 electron blocking layer; And a 1-4 electron blocking layer disposed between the 1-3 electron blocking layer and the active layer.

The first-first electron blocking layer may increase linearly in aluminum composition.

The 1-2 electron blocking layer may have an aluminum composition of 25% to 40%.

The maximum value of the aluminum composition in the first electron blocking layer may be greater than the maximum value of the aluminum composition in the second electron blocking layer.

The aluminum composition of the second conductive semiconductor layer may decrease linearly from the first point to the second point.

The composition ratio of the aluminum composition of the first point and the aluminum composition of the second point may be 1: 1.25 to 1:10.

The maximum value of the aluminum composition of the second electron blocking layer may be greater than the aluminum composition at the second point.

The semiconductor device package according to the embodiment includes a body; And a semiconductor device disposed in the body, wherein the semiconductor device comprises: a first conductivity type semiconductor layer; An active layer disposed on the first conductivity type semiconductor layer; A first electron blocking layer disposed on the active layer; A second conductivity type semiconductor layer disposed on the first electron blocking layer; A second electron blocking layer on the second conductive semiconductor layer; A first electrode electrically connected to the first conductive semiconductor layer; And a second electrode electrically connected to the second conductive semiconductor layer, wherein the second conductive semiconductor layer is a first point at which the second conductive semiconductor layer is in contact with the first electron blocking layer. ; And a second point at which the second conductivity type semiconductor layer and the second electron blocking layer contact each other, wherein the aluminum composition at the first point is greater than the aluminum composition at the second point.

According to the embodiment, a vertical ultraviolet light emitting device can be manufactured.

In addition, the light output can be improved.

Various and advantageous advantages and effects of the present invention are not limited to the above description, and will be more readily understood in the course of describing specific embodiments of the present invention.

1 is a conceptual diagram of a semiconductor device according to an embodiment;
2 is a graph showing the aluminum composition ratio of the semiconductor device according to an embodiment of the present invention,
3 to 4 are views for explaining the effect of improving the light output in the semiconductor device according to an embodiment of the present invention;
5 is a graph illustrating the improvement of the light output and operating voltage according to the aluminum composition of the second conductive semiconductor device and the aluminum composition of the second electron blocking layer of the semiconductor device according to the embodiment of the present invention;
6 is a view taken by a TEM of a semiconductor device according to an embodiment of the present invention,
7 is a conceptual diagram of a semiconductor device according to an embodiment of the present invention;
8 is a conceptual diagram of a semiconductor device package according to an embodiment of the present invention.

As the invention allows for various changes and numerous embodiments, particular embodiments will be illustrated and described in the drawings. However, this is not intended to limit the present invention to specific embodiments, it should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention.

Terms including ordinal numbers, such as second and first, may be used to describe various components, but the components are not limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the second component may be referred to as the first component, and similarly, the first component may also be referred to as the second component. The term and / or includes a combination of a plurality of related items or any item of a plurality of related items.

When a component is referred to as being "connected" or "connected" to another component, it may be directly connected to or connected to that other component, but it may be understood that other components may be present in between. Should be. On the other hand, when a component is said to be "directly connected" or "directly connected" to another component, it should be understood that there is no other component in between.

The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this application, the terms "comprise" or "have" are intended to indicate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, and one or more other features. It is to be understood that the present invention does not exclude the possibility of the presence or the addition of numbers, steps, operations, components, components, or a combination thereof.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art. Terms such as those defined in the commonly used dictionaries should be construed as having meanings consistent with the meanings in the context of the related art and shall not be construed in ideal or excessively formal meanings unless expressly defined in this application. Do not.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments will be described in detail with reference to the accompanying drawings, and the same or corresponding components will be given the same reference numerals regardless of the reference numerals, and redundant description thereof will be omitted.

1 is a conceptual diagram of a semiconductor device according to an embodiment, and FIG. 2 is a graph showing an aluminum composition ratio of a semiconductor device according to an embodiment of the present invention.

1 is a conceptual diagram of a semiconductor device according to an embodiment of the present invention, Figure 2 is a graph showing the aluminum composition ratio of the semiconductor device according to an embodiment of the present invention.

Referring to FIG. 1, a semiconductor device according to an embodiment may include a first conductive semiconductor layer 124, a second conductive semiconductor layer 127, and a first conductive semiconductor layer 124 and a second conductive semiconductor layer. On the active layer 126 disposed between the 127, the first electron blocking layer 128 and the second conductive semiconductor layer 127 disposed between the active layer 126 and the second conductive semiconductor layer 127. And a second electron blocking layer 129 disposed. In addition, the semiconductor device may include a first electrode electrically connected to the first conductive semiconductor layer 124 and a second electrode electrically connected to the second conductive semiconductor layer. Accordingly, the semiconductor device may emit light by supplying current.

In detail, the first conductivity-type semiconductor layer 124 may be formed of a compound semiconductor such as a III-V group or a II-VI group, and may be doped with a first dopant. The first conductive semiconductor layer 124 is a semiconductor material having a composition formula of Inx1Aly1Ga1-x1-y1N (0 ≦ x1 ≦ 1, 0 ≦ y1 ≦ 1, 0 ≦ x1 + y1 ≦ 1), for example, GaN, AlGaN, InGaN, InAlGaN and the like can be selected. The first dopant may be an n-type dopant such as Si, Ge, Sn, Se, or Te. When the first dopant is an n-type dopant, the first conductive semiconductor layer 124 doped with the first dopant may be an n-type semiconductor layer.

The active layer 126 is disposed between the first conductive semiconductor layer 124 and the second conductive semiconductor layer 127. The active layer 126 is a layer where electrons (or holes) injected through the first conductive semiconductor layer 124 meet holes (or electrons) injected through the second conductive semiconductor layer 127. The active layer 126 transitions to a low energy level as electrons and holes recombine, and may generate light having an ultraviolet wavelength.

The active layer 126 may have any one of a single well structure, a multi well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, or a quantum line structure. The structure is not limited to this.

For example, the active layer 126 may include a plurality of barrier layers and well layers. The barrier layer may have a higher In composition than the well layer. And the barrier layer may be larger than the well layer. For example, the barrier layer may be 5 nm to 15 nm and the well layer may be 7 nm to 8 nm. In addition, the plurality of barrier layers may be applied differently depending on the position of the presence or absence of Si, but is not limited to this configuration. Here, the thickness direction is a direction from the first conductive semiconductor layer 124 to the second conductive semiconductor layer 127 or from the second conductive semiconductor layer 127 to the first conductive semiconductor layer 124. Can be.

The second conductive semiconductor layer 127 is formed on the active layer 126, and may be implemented as a compound semiconductor such as a group III-V group or a group II-VI. The second conductive semiconductor layer 127 may be a second semiconductor layer 127. Dopants may be doped. The second conductive semiconductor layer 127 may be a semiconductor material having a composition formula of Inx5Aly2Ga1-x5-y2N (0≤x5≤1, 0≤y2≤1, 0≤x5 + y2≤1) or AlInN, AlGaAs, GaP, GaAs It may be formed of a material selected from GaAsP, AlGaInP. When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, the second conductive semiconductor layer 127 doped with the second dopant may be a p-type semiconductor layer.

In addition, the second conductivity-type semiconductor layer 127 may include a first point P _{1, which} is a point of contact with the first electron blocking layer 128, and a second point P ₂ , which is a point of contact with the second electron blocking layer 129. ) May be included.

The first electron blocking layer 128 may be disposed between the active layer 126 and the second conductive semiconductor layer 127. The first electron blocking layer 128 blocks the flow of electrons supplied from the first conductivity type semiconductor layer 124 to the second conductivity type semiconductor layer 127 so that electrons and holes in the active layer 126 are blocked. It can increase the probability of recombination. The energy band gap of the first electron blocking layer 128 may be larger than the energy band gap of the active layer 126 and / or the second conductivity type semiconductor layer 127.

The first electron blocking layer 128 is a semiconductor material having a compositional formula of In _x1 Al _y1 Ga _{1 -x1- y1} N (0≤x1≤1, 0≤y1≤1, 0≤x1 + y1≤1), for example, For example, it may be selected from AlGaN, InGaN, InAlGaN and the like, but is not limited thereto. The first electron blocking layer 128 is in contact with the first-first electron blocking layer 128a and the first-first electron blocking layer 128a in which the aluminum composition is increased, and the first and second electron blocking layers in which the aluminum composition is increased ( 128b). In addition, the first electron blocking layer 128 may further include a 1-3 electron blocking layer 128c and a 1-4 electron blocking layer 128d having an increased or decreased aluminum composition. This configuration will be described in detail later with reference to FIG. 2.

Referring to FIG. 2, the first conductivity type semiconductor layer 124, the barrier layer 126a, the well layer 126b, the first-first to first-fourth electron barrier layers 128a, 128b, 128c, and 128d, The second conductive semiconductor layer 127 and the second electron barrier layer 129 may both include aluminum. Therefore, the first conductivity type semiconductor layer 124, the barrier layer 126a, the well layer 126b, the first to first to fourth electron barrier layers 128a, 128b, 128c, and 128d, and the second conductivity type The semiconductor layer 127 and the second electron barrier layer 129 may be InAlGaN or AlGaN, but are not limited thereto.

In FIG. 2, the surface refers to the top surface of the second electron blocking layer 129, and the thickness is defined as a length from the second electron blocking layer toward the first conductive semiconductor layer 124.

In FIG. 2, the aluminum composition may change in a direction in which the thickness increases. In the second conductive semiconductor layer 127, the composition of aluminum may increase as the thickness thereof increases in the direction in which the thickness increases.

In addition, the first electron blocking layer 128 may have an aluminum composition of 10% to 40%. When the aluminum composition of the first electron blocking layer 128 is less than 10%, the height of the energy barrier for blocking electrons may be insufficient and light emitted from the active layer 126 may be absorbed by the first electron blocking layer 128. In addition, when the aluminum composition exceeds 40%, the electrical characteristics of the semiconductor device may be deteriorated.

The first electron blocking layer 128 includes the first-first electron blocking layer 128a, the 1-2 electron blocking layer 128b, the 1-3 electron blocking layer 128c, and the first-4 having different aluminum compositions. It may include an electron blocking layer 128d.

The first-first electron blocking layer 128a may be in contact with the second conductivity-type semiconductor layer 127. Thus, the 1-1 st electron blocking layer 128a may include the first point P ₁ .

As the first-first electron blocking layer 128a approaches the active layer 126, the aluminum composition may increase. For example, the first-first electron blocking layer 128a may have an aluminum composition of 10% to 40%.

In addition, the first-first electron blocking layer 128a may increase linearly as the aluminum composition approaches the active layer 126 at the first point P ₁ . By such a configuration, the hole injection effect can be increased.

The first-first electron blocking layer 128a may have a thickness of about 3 nm to about 12 nm. If the thickness of the first-first electron blocking layer 128a is less than 3 nm, there may be a problem in that the movement of electrons may not be blocked efficiently. In addition, when the thickness of the first-first electron blocking layer 128a is greater than 3 nm, the efficiency of injecting holes into the active layer 126 may be deteriorated.

The 1-2 electron blocking layer 128b may be in contact with the 1-1 electron blocking layer 128a. The 1-2 electron blocking layer 128b may be maintained in an aluminum composition. In addition, the aluminum composition of the 1-2 electron blocking layer 128b may be equal to the maximum value of the aluminum composition of the 1-1 electron blocking layer 128a.

The 1-2 electron blocking layer 128b may have an aluminum composition of 25% to 40%. When the aluminum composition of the 1-2 electron blocking layer 128b is less than 25%, the height of the energy barrier for blocking electrons may be insufficient, and the aluminum composition of the 1-2 electron blocking layer 128b is greater than 40%. In this case, there may be a problem in that the hole injection effect is reduced.

The 1-2 electron blocking layer 128b may have a thickness of about 3 nm to about 10 nm. When the thickness of the 1-2 electron blocking layer 128b is less than 3 nm, the height of the energy barrier for blocking electrons may be insufficient, and when the thickness of the 1-2 electron blocking layer 128b is more than 10 nm, hole injection may be performed ( There may be a problem that the hole injection) effect is reduced.

The 1-3 electron blocking layer 128c may contact the 1-2 electron blocking layer 128b and may be disposed closer to the active layer 126 than the 1-2 electron blocking layer 128b. The first electron blocking layer 128c may have the maximum aluminum composition in the first electron blocking layer 128. For example, the aluminum composition of the 1-3 electron blocking layer 128c may be greater than the aluminum composition of the 1-2 electron blocking layer 128b.

The 1-4 electron blocking layer 128d may be in contact with the 1-3 electron blocking layer 128c and may be disposed closer to the active layer 126 than the 1-3 electron blocking layer 128c. The first-4 electron blocking layer 128d may have an aluminum composition smaller than the aluminum composition of the 1-2 electron blocking layer 128b and the aluminum composition of the 1-3 electron blocking layer 128c. In addition, the aluminum composition of the first to fourth electron blocking layers 128d may be greater than that of the active layer 126. That is, between the 1-2 electron blocking layer 128b and the active layer, the 1-1 electron blocking layer 128a and the 1-2 electron blocking layer, which are layers smaller than the aluminum composition of the 1-2 electron blocking layer 128b, are formed. The 1-2 electron blocking layer 128b higher than the aluminum composition of the layer 128b may be disposed. With this configuration, it is possible to prevent the diffusion of the aluminum composition between the first electron blocking layer 128 and the active layer 126 in the process of manufacturing the semiconductor device according to the embodiment. Accordingly, the aluminum composition of the barrier layer 126a closest to the first electron blocking layer 128 among the active layers 126 may be maintained to generate light having a desired wavelength.

The first-first electron blocking layer 128a and the first-second electron blocking layer 128b may include AlGaN, and the first-third electron blocking layer 128c and the first-fourth electron blocking layer 128d may be formed of AlGaN. May include InAlGaN, but is not limited thereto.

As described above, the second conductivity-type semiconductor layer 127 may include a first point P ₁ and a second point P ₂ . The first point P ₁ may have a larger aluminum composition than the second point P ₂ . That is, the second conductivity type semiconductor layer 127 may be larger as the aluminum composition is closer to the active layer 126.

For example, the second conductivity-type semiconductor layer 127 may increase linearly as the aluminum composition is closer to the active layer 126. With this arrangement, the second conductive type semiconductor layer 127 may be higher than the Al composition of the first point (P ₁₎ is an aluminum composition a second point (P ₂₎ from. Accordingly, the first point P ₁ may have a relatively negative charge due to a lower hole concentration than the second point P ₂ . As a result, an electric field may be applied from the second point P ₂ to the first point P ₁ so that a hole accelerator may easily occur in which the hole easily moves toward the active layer 126. As a result, the semiconductor device according to the embodiment may provide improved light output.

The second conductivity-type semiconductor layer 127 has a linear valence band and an increasing hole concentration, thereby increasing the holes injected into the active layer 126, thereby increasing the brightness and light of the semiconductor device. You can improve the output.

Here, the hole concentration refers to the number of holes in the valence band per predetermined unit volume.

The second conductive semiconductor layer 127 may have an aluminum composition of 10% to 30% at the first point P ₁ . When the aluminum composition is less than 10% at the first point P ₁ of the second conductive semiconductor layer 127, hole injection may be lowered. When the aluminum composition is greater than 30% at the first point P ₁ of the second conductivity-type semiconductor layer 127, hole concentration may decrease. In addition, there is also a problem in that the aluminum composition is high, the quality degradation due to the lattice difference occurs.

The second conductive semiconductor layer 127 may have an aluminum composition of 2% to 8% at the second point P ₂ . When the aluminum composition is less than 2% at the second point P ₂ of the second conductive semiconductor layer 127, hole injection may be degraded and light absorption may occur. When the aluminum composition is greater than 8% at the second point P ₂ of the second conductive semiconductor layer 127, the difference in aluminum composition between the second point P ₂ and the second electron blocking layer 129 may be reduced. The occurrence of polarization may be reduced. As a result, hole concentration may be reduced. Hole concentration refers to the number of holes in the valence band per predetermined unit volume. In addition, there is a problem that the quality degradation due to the lattice difference occurs due to the increase in the aluminum composition.

Accordingly, in the second conductive semiconductor layer 127, the composition ratio of the aluminum composition of the first point P ₁ and the aluminum composition of the second point P ₂ may be 1: 1.25 to 1:10.

In the second conductive semiconductor layer 127, when the composition ratio of the aluminum composition of the first point P ₁ and the aluminum composition of the second point P ₂ is smaller than 1: 1.25, hole injection is reduced and light is reduced. There is a problem that the light output is lowered due to absorption. The second conductivity-type semiconductor layer 127 may include the second electron blocking layer 129 when the composition ratio of the aluminum composition of the first point P ₁ and the aluminum composition of the second point P ₂ is greater than 1:10. the second point (P ₂₎ by a polarization caused by the aluminum composition difference between the second point (P ₂₎ hole concentration (hole concentration) in is reduced, there is a problem that the light output decreases.

The second electron blocking layer 129 may be disposed on the second conductivity type semiconductor layer 127. The second electron blocking layer 129 may have a constant aluminum composition. The maximum value of the aluminum composition of the second electron blocking layer 129 may be smaller than the maximum value of the aluminum composition of the first electron blocking layer 128. For example, the second electron blocking layer 129 may include AlGaN, but is not limited thereto.

The second electron blocking layer 129 may have an aluminum composition greater than that of the aluminum composition at the second point P ₂ . Due to this configuration, the second electron blocking layer 129 has a difference in aluminum composition from the second point P ₂ , and the second electron blocking layer 129 is formed as a lattice difference as the aluminum composition increases in the second electron blocking layer 129. Hole concentration can be increased at two points P ₂ . As a result, the second electron blocking layer 129 may improve the light output of the semiconductor device by increasing the polarization effect in the second conductive semiconductor layer 127.

The second electron blocking layer 129 may have a thickness of about 1 nm to about 3 nm. When the thickness of the second electron blocking layer 129 is smaller than 1 nm, the effect of charging holes in the first portion where the second point P ₂ and the second electron blocking layer 129 are in contact with each other may be reduced. have. In addition, when the thickness of the second electron blocking layer 129 is greater than 3 nm, there is a problem in that the electric field acting on the second electron blocking layer 129 decreases, so that the movement of the hole is reduced by the electric field, thereby reducing the light output.

The second electron blocking layer 129 may have an aluminum composition of 20% to 40%. When the aluminum composition of the second electron blocking layer 129 is less than 20%, polarization due to the difference in aluminum composition between the aluminum composition and the aluminum composition of the second electron blocking layer 129 at the second point P ₂ is achieved. The effect may be lowered. And when the aluminum composition of the second electron blocking layer 129 is greater than 40%, there is a problem that the hole injection is reduced.

3 to 4 are diagrams illustrating an effect of improving light output in a semiconductor device according to an embodiment of the present invention.

Specifically, FIG. 4 shows light output for 700 of 133300 semiconductor devices according to an embodiment having a size of 1100 um * 1100 um (the width of the semiconductor element and the length of the semiconductor element) on a 6 inch wafer. A map representing. FIG. 3 is a map showing the light output of a semiconductor device when there is no second electron blocking layer and the aluminum composition at the first point and the aluminum composition at the second point of the second conductive semiconductor layer are the same.

Specifically, in FIGS. 3 and 4, a wafer includes a substrate including 4.5 μm thick uGaN, a buffer layer including 0.5 μm thick GaN, InGaN, and AlGaN, and a 2.3 μm thick n− on the buffer layer. A first conductive semiconductor layer including AlGaN, an active layer having a thickness of 90 nm on the first conductive semiconductor layer, a first electron blocking layer having a thickness of 20 nm, and a second conductive semiconductor layer having a thickness of 65 nm may be included on the active layer. In addition, a second electron blocking layer according to the above-described embodiment may be disposed in FIG. 3. 3 and 4, there is no second electron blocking layer, and the second electron blocking layer according to the embodiment is more than the case where the aluminum composition at the first point and the aluminum composition at the second point of the second conductive semiconductor layer are the same. In the case of further comprising a light output generated in the wafer (wafer) shows an improved result.

FIG. 5 is a graph illustrating improvement of light output and operating voltage according to the aluminum composition of the second conductive semiconductor device and the aluminum composition of the second electron blocking layer of the semiconductor device according to the embodiment of the present invention.

5A and 5B, when the aluminum composition is 10% to 30% at the first point P ₁ , the light output of the semiconductor device may be relatively increased. When the aluminum composition is less than 10% or more than 30% at the first point P ₁ , the light output of the semiconductor device may be lowered. Here, the light output is a relative light output value measured based on the light output when the aluminum composition of the first point P ₁ is 20%. Preferably, the aluminum composition at the first point P ₁ may be 20%. In this case, the semiconductor device may have the maximum light output.

And when the aluminum composition is less than 10% or more than 30% at the first point (P ₁ ) it can be seen that the operating voltage also increases. On the other hand, as described above, when the aluminum composition is 10% to 30% at the first point P ₁ , it can be seen that the operating voltage decreases. Here, the operating voltage is a relative light output value measured based on the operating voltage when the aluminum composition of the first point P ₁ is 20%. Therefore, preferably, the aluminum composition is 20% at the first point P ₁ , so that the operating voltage of the semiconductor device may be lowered.

Referring to FIGS. 5C and 5D, when the aluminum composition of the second electron blocking layer is 20% to 40% as described above, the light output of the semiconductor device may be relatively increased, and the operating voltage may be lowered. It can be seen that when the aluminum composition of the second electron blocking layer is less than 20% or more than 40%, the operating voltage of the semiconductor device is increased and the light output is decreased. Accordingly, it can be seen that the aluminum composition of the second electron blocking layer increases the hole concentration at the second point P ₂ of the second conductivity-type semiconductor layer, thereby improving light output of the semiconductor device by increasing hole injection through hole acceleration. have.

6 is a view taken by a TEM of a semiconductor device according to an embodiment of the present invention.

Referring to FIG. 6, the cross-section of the semiconductor device according to the exemplary embodiment of FIG. 1 was observed using a TEM (Transmitted Electron Microscope).

6A is a cross-sectional view of a stepped first electron blocking layer 128 and a second electron blocking layer 129 in a semiconductor device, and FIG. 6B illustrates a first electron blocking layer 128 in which a step is not formed in a semiconductor device. And the second electron blocking layer 129 are observed. Accordingly, it can be seen that the first electron blocking layer 128 is disposed between the active layer and the second conductive semiconductor layer, and the second electron blocking layer 129 is disposed on the second conductive semiconductor layer.

7 is a conceptual diagram of a semiconductor device according to an embodiment of the present invention.

Referring to FIG. 7, the semiconductor device 10 according to the embodiment may include a semiconductor structure 120 including a first conductive semiconductor layer 124, a second conductive semiconductor layer 127, and an active layer 126. A first electrode 142 electrically connected to the first conductive semiconductor layer 124, a conductive layer 151 disposed under the second conductive semiconductor layer 127, and a substrate disposed under the conductive layer 151. 152 may include. As described above, the first electron blocking layer 128 is disposed between the active layer 126 and the second conductivity-type semiconductor layer 127 in the semiconductor structure 120, and the second conductivity-type semiconductor layer 129 is disposed in the semiconductor structure 120. The second electron blocking layer 129 may be disposed between the conductive layers 151.

The first conductive semiconductor layer 124, the active layer 126, the second conductive semiconductor layer 127, the first electron blocking layer 128, and the second electron blocking layer 129 are equally applicable. Can be.

The first electrode 142 may be disposed on an upper surface of the semiconductor structure 120 to be electrically connected to the first conductive semiconductor layer 124.

The first electrode 142 may be an ohmic electrode. The first electrode 142 includes indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZAO), indium gallium zinc oxide (IGZO), and indium gallium tin (IGTO). oxide), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZO (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, or Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt It may be formed, including at least one of Au, Hf, but is not limited to these materials.

The conductive layer 151 may be formed under the second electron blocking layer 129 and may be electrically connected to the second conductive semiconductor layer 127.

Thereafter, the conductive substrate 152 may be formed under the conductive layer 151.

The substrate 152 may be made of a conductive material. In exemplary embodiments, the substrate 152 may include a metal or a semiconductor material. The substrate 152 may be a metal having excellent electrical conductivity and / or thermal conductivity. In this case, heat generated during operation of the semiconductor device may be quickly released to the outside. In addition, when the substrate 152 is made of a conductive material, the first electrode 142 may receive a current from the outside through the substrate 152.

The substrate 152 may include a material selected from the group consisting of silicon, molybdenum, silicon, tungsten, copper, and aluminum, or an alloy thereof, but is not limited thereto.

The bonding layer (not shown) may be disposed between the substrate 152 and the conductive layer 151. The bonding layer (not shown) may comprise a conductive material. For example, the bonding layer (not shown) may include a material selected from the group consisting of gold, tin, indium, aluminum, silicon, silver, nickel, and copper, or an alloy thereof.

Passivation layers (not shown) may be disposed on the top and side surfaces of the semiconductor structure 120. The passivation layer (not shown) may have a thickness of 200 nm or more and 500 nm or less. When it is 200 nm or more, the device may be protected from external moisture or foreign matter, thereby improving the electrical and optical reliability of the device. When it is less than 500 nm, the stress applied to the semiconductor device may be reduced, and the optical and electrical reliability of the semiconductor device may be reduced. In addition, as the processing time of the semiconductor device increases, the problem that the cost of the semiconductor device increases. However, the present invention is not limited thereto.

8 is a conceptual diagram of a semiconductor device package according to an embodiment of the present invention.

Referring to FIG. 8, the semiconductor device package may include a body 2 having grooves (openings 3), a semiconductor device 1 disposed in the body 2, and a body 2 arranged in the semiconductor device 1. It may include a pair of lead frames (5a, 5b) that are electrically connected. The semiconductor device 1 may include all of the above configurations.

The body 2 may include a material or a coating layer that reflects ultraviolet light. The body 2 may be formed by stacking a plurality of layers 2a, 2b, 2c, 2d, and 2e. The plurality of layers 2a, 2b, 2c, 2d, and 2e may be the same material or may include different materials. For example, the plurality of layers 2a, 2b, 2c, 2d, and 2e may include an aluminum material.

The groove 3 may be wider as it is farther from the semiconductor device, and a step 3a may be formed on the inclined surface.

The light transmitting layer 4 may cover the groove 3. The light transmitting layer 4 may be made of glass, but is not limited thereto. The light transmitting layer 4 is not particularly limited as long as it is a material that can effectively transmit ultraviolet light. The inside of the groove 3 may be an empty space.

The semiconductor device can be applied to various kinds of light source devices. For example, the light source device may be a concept including a sterilizing device, a curing device, a lighting device, and a display device and a vehicle lamp. That is, the semiconductor device may be applied to various electronic devices disposed in a case to provide light.

The sterilization apparatus includes a semiconductor device according to the embodiment to sterilize a desired region. The sterilizer may be applied to household appliances such as water purifiers, air conditioners and refrigerators, but is not necessarily limited thereto. That is, the sterilization apparatus can be applied to all the various products (eg, medical devices) requiring sterilization.

Illustratively, the water purifier may be provided with a sterilizing device according to an embodiment for sterilizing circulating water. The sterilization apparatus may be disposed at a nozzle or a discharge port through which water circulates to irradiate ultraviolet rays. At this time, the sterilization apparatus may include a waterproof structure.

The curing apparatus includes a semiconductor device according to an embodiment to cure various kinds of liquids. Liquids can be the broadest concept that includes all of the various materials that cure when irradiated with ultraviolet light. By way of example, the curing apparatus may cure various kinds of resins. Alternatively, the curing device may be applied to cure a cosmetic product such as a nail polish.

The lighting apparatus may include a light source module including a substrate and a semiconductor device of an embodiment, a heat dissipation unit for dissipating heat of the light source module, and a power supply unit for processing or converting an electrical signal provided from the outside and providing the light source module to the light source module. In addition, the lighting apparatus may include a lamp, a head lamp, or a street lamp.

The display device may include a bottom cover, a reflector, a light emitting module, a light guide plate, an optical sheet, a display panel, an image signal output circuit, and a color filter. The bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may constitute a backlight unit.

The reflecting plate is disposed on the bottom cover, and the light emitting module may emit light. The light guide plate may be disposed in front of the reflective plate to guide light emitted from the light emitting module to the front, and the optical sheet may include a prism sheet or the like to be disposed in front of the light guide plate. The display panel is disposed in front of the optical sheet, the image signal output circuit supplies an image signal to the display panel, and the color filter may be disposed in front of the display panel.

The semiconductor device may be used as an edge type backlight unit or a direct type backlight unit when used as a backlight unit of a display device.

The semiconductor element may be a laser diode in addition to the light emitting diode described above.

Like the light emitting device, the laser diode may include the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer having the above-described structure. In addition, although the p-type first conductive semiconductor and the n-type second conductive semiconductor are bonded to each other, an electro-luminescence phenomenon is used in which light is emitted when a current flows, but the direction of emitted light is used. There is a difference in and phase. That is, a laser diode may emit light having a specific wavelength (monochromatic beam) in the same direction with the same phase by using a phenomenon called stimulated emission and a constructive interference phenomenon. Due to this, it can be used for optical communication, medical equipment and semiconductor processing equipment.

For example, a photodetector may be a photodetector, which is a type of transducer that detects light and converts its intensity into an electrical signal. Such photodetectors include photovoltaic cells (silicon, selenium), photoelectric devices (cadmium sulfide, cadmium selenide), photodiodes (e.g. PD having peak wavelength in visible blind or true blind spectral regions) Transistors, optoelectronic multipliers, phototubes (vacuum, gas encapsulation), infrared (Infra-Red) detectors, and the like, but embodiments are not limited thereto.

In addition, a semiconductor device such as a photodetector may generally be manufactured using a direct bandgap semiconductor having excellent light conversion efficiency. Alternatively, the photodetector has various structures, and the most common structures include a pin photodetector using a pn junction, a Schottky photodetector using a Schottky junction, and a MSM (Metal Semiconductor Metal) photodetector. .

Like a light emitting device, a photodiode may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer having the above-described structure, and have a pn junction or pin structure. The photodiode operates by applying a reverse bias or zero bias. When light is incident on the photodiode, electrons and holes are generated and current flows. In this case, the magnitude of the current may be approximately proportional to the intensity of light incident on the photodiode.

Photovoltaic cells or solar cells are a type of photodiodes that can convert light into electrical current. The solar cell may include the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer having the above-described structure, similarly to the light emitting device.

In addition, through the rectification characteristics of a general diode using a p-n junction it may be used as a rectifier of an electronic circuit, it may be applied to an ultra-high frequency circuit and an oscillation circuit.

In addition, the semiconductor device described above is not necessarily implemented as a semiconductor and may further include a metal material in some cases. For example, a semiconductor device such as a light receiving device may be implemented using at least one of Ag, Al, Au, In, Ga, N, Zn, Se, P, or As, and may be implemented by a p-type or n-type dopant. It may also be implemented using a doped semiconductor material or an intrinsic semiconductor material.

Although the above description has been made based on the embodiments, these are merely examples and are not intended to limit the present invention. Those skilled in the art to which the present invention pertains may not have been exemplified above without departing from the essential characteristics of the present embodiments. It will be appreciated that many variations and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

Claims (10)

A first conductivity type semiconductor layer;
An active layer disposed on the first conductivity type semiconductor layer;
A first electron blocking layer disposed on the active layer;
A second conductivity type semiconductor layer disposed on the first electron blocking layer;
A second electron blocking layer on the second conductive semiconductor layer;
A first electrode electrically connected to the first conductive semiconductor layer; And
A second electrode electrically connected to the second conductivity type semiconductor layer,
The second conductivity type semiconductor layer,
A first point at which the second conductive semiconductor layer and the first electron blocking layer are in contact with each other; And
A second point, which is a point at which the second conductivity type semiconductor layer and the second electron blocking layer contact each other,
And wherein the aluminum composition at the first point is greater than the aluminum composition at the second point.
The method of claim 1,
The first electron blocking layer,
A 1-1 electron blocking layer in contact with the first point and having an aluminum composition increased toward the active layer; And
And a 1-2 electron blocking layer in contact with the 1-1 electron blocking layer and having a constant aluminum composition.
The method of claim 2,
The first electron blocking layer,
A 1-3 electron blocking layer in contact with the 1-2 electron blocking layer and having the highest aluminum composition; And
And a 1-4 electron blocking layer disposed between the 1-3 electron blocking layer and the active layer.
The method of claim 2,
The first-first electron blocking layer is a semiconductor device in which the aluminum composition increases linearly.
The method of claim 4, wherein
The 1-2 electron blocking layer has a aluminum composition of 25% to 40%.
The method of claim 1,
The maximum value of the aluminum composition in the first electron blocking layer is greater than the maximum value of the aluminum composition in the second electron blocking layer.
The method of claim 1,
And the aluminum composition of the second conductive semiconductor layer decreases linearly from the first point to the second point.
The method of claim 1,
The composition ratio of the aluminum composition of the said 1st point and the aluminum composition of the said 2nd point is 1: 1.25-1: 10.
The method of claim 1,
The maximum value of the aluminum composition of the second electron blocking layer is greater than the aluminum composition at the second point.
Body; And
A semiconductor device disposed in the body,
The semiconductor device,
A first conductivity type semiconductor layer;
An active layer disposed on the first conductivity type semiconductor layer;
A first electron blocking layer disposed on the active layer;
A second conductivity type semiconductor layer disposed on the first electron blocking layer;
A second electron blocking layer on the second conductive semiconductor layer;
A first electrode electrically connected to the first conductive semiconductor layer; And
A second electrode electrically connected to the second conductivity type semiconductor layer,
The second conductivity type semiconductor layer,
A first point at which the second conductive semiconductor layer and the first electron blocking layer are in contact with each other; And
A second point, which is a point at which the second conductivity type semiconductor layer and the second electron blocking layer contact each other,
And a composition of aluminum at the first point is greater than the composition of aluminum at the second point.

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