KR102564211B1 - Smeiconductor device and method for manufacturing the same - Google Patents

Abstract

Embodiments include a plurality of semiconductor structures each including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; a first electrode electrically connected to the first conductivity type semiconductor layer; a second electrode electrically connected to the second conductivity type semiconductor layer; a first conductive layer disposed under the first electrode and electrically connected thereto; a second conductive layer disposed below the second electrode and electrically connected thereto; a first insulating layer disposed between the first conductive layer and the semiconductor structure; and a connection electrode electrically connected to an adjacent semiconductor structure, wherein each of the plurality of semiconductor structures includes a first recess and a second recess penetrating the second conductive semiconductor layer and the active layer, wherein the The second recess discloses a semiconductor device dividing each of the plurality of semiconductor structures into an active region and an inactive region.

Description

Semiconductor device and its manufacturing method {SMEICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME}

The embodiment relates to a semiconductor device and a manufacturing method thereof.

Semiconductor devices including compounds such as GaN and AlGaN have many advantages, such as having a wide and easily adjustable band gap energy, and can be used in various ways such as light emitting devices, light receiving devices, and various diodes.

In particular, light emitting devices such as light emitting diodes or laser diodes using group 3-5 or group 2-6 compound semiconductor materials of semiconductors are developed in thin film growth technology and device materials to produce red, green, It can implement various colors such as blue and ultraviolet rays, and it is possible to implement white light with high efficiency by using fluorescent materials or combining colors. It has the advantages of speed, safety, and environmental friendliness.

In addition, when light receiving devices such as photodetectors or solar cells are manufactured using group 3-5 or group 2-6 compound semiconductor materials, photocurrent is generated by absorbing light in various wavelength ranges through the development of device materials. By doing so, it is possible to use light in a wide range of wavelengths from gamma rays to radio wavelengths. In addition, it has the advantages of fast response speed, safety, environmental friendliness, and easy control of element materials, so that it can be easily used in power control or ultra-high frequency circuits or communication modules.

Accordingly, the semiconductor device can replace a transmission module of an optical communication means, a light emitting diode backlight that replaces a Cold Cathode Fluorescence Lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, and can replace a fluorescent lamp or an incandescent bulb. Applications are expanding to white light emitting diode lighting devices, automobile headlights and traffic lights, and sensors that detect gas or fire. In addition, applications of semiconductor devices can be expanded to high-frequency application circuits, other power control devices, and communication modules.

In particular, a light emitting device that emits light in the ultraviolet wavelength region can be used for curing, medical, and sterilization by performing a curing or sterilizing action.

Recently, research on UV light emitting devices has been actively conducted, but it is still difficult to implement UV light emitting devices in a vertical type, and there is a problem of peeling due to voids.

The embodiment provides a semiconductor device.

In addition, a semiconductor device having improved reliability is provided.

In addition, a semiconductor device having excellent current spreading effect is provided.

The problem to be solved in the embodiment is not limited thereto, and it will be said that the solution to the problem described below or the purpose or effect that can be grasped from the embodiment is also included.

A semiconductor device according to an embodiment includes a plurality of semiconductor structures each including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; a first electrode electrically connected to the first conductivity type semiconductor layer; a second electrode electrically connected to the second conductivity type semiconductor layer; a first conductive layer disposed under the first electrode and electrically connected thereto; a second conductive layer disposed below the second electrode and electrically connected thereto; a first insulating layer disposed between the first conductive layer and the semiconductor structure; and a connection electrode electrically connected to an adjacent semiconductor structure, wherein each of the plurality of semiconductor structures includes a first recess and a second recess penetrating the second conductive semiconductor layer and the active layer, wherein the The second recess partitions each of the plurality of semiconductor structures into an active region and an inactive region.

Each of the plurality of semiconductor structures includes an edge portion, the edge portion includes a first edge portion disposed to face an adjacent semiconductor structure and a second edge portion extending from the first edge portion, wherein the second recess is It may include a first recess portion extending adjacent to the first edge portion and disposed, and a second recess portion extending adjacent to the second edge portion.

The connection electrode may partially overlap the first edge portion in a vertical direction.

It may further include a groove disposed between adjacent first recessed portions, and the connection electrode partially overlaps the groove in a vertical direction.

The connection electrode may be disposed inside the second edge portion in the adjacent semiconductor structure.

The connection electrode may be partially disposed inside the adjacent first recessed portion.

Further comprising a second insulating layer disposed between the semiconductor structure and the first conductive layer, wherein the second insulating layer is disposed below the first through hole and the second conductive layer disposed below the first electrode A second through hole may be further included.

The plurality of semiconductor structures may include: a first semiconductor structure; And a second semiconductor structure spaced apart from the first semiconductor structure, wherein the connection electrode may be electrically connected to a second electrode under the first semiconductor structure and a first electrode under the second semiconductor structure. .

The connection electrode may be disposed in a second through hole overlapping the first semiconductor structure in a vertical direction and a first through hole overlapping the first semiconductor structure in a vertical direction.

The first through hole and the second through hole may be disposed inside the second recess of each semiconductor structure.

a third insulating layer disposed under the first conductive layer; A passivation layer disposed between a plurality of adjacent semiconductor structures, on top surfaces of the plurality of semiconductor structures and on side surfaces of the plurality of semiconductor structures; and an electrode pad disposed outside the plurality of semiconductor structures and electrically connected to the second conductive layer.

According to the exemplary embodiment, a semiconductor device having improved reliability may be manufactured.

In addition, a semiconductor device having excellent current dispersion, light output, and operating voltage characteristics can be manufactured.

According to embodiments, the semiconductor device may be implemented in a vertical type, but is not limited thereto and may be implemented in a flip chip type.

Various advantageous advantages and effects of the present invention are not limited to the above description, and will be more easily understood in the process of describing specific embodiments of the present invention.

1 is a plan view of a semiconductor device according to an exemplary embodiment;
Figure 2 is a cross-sectional view taken along line II' in Figure 1;
3 is an enlarged view of part A in FIG. 2;
4 is an enlarged view of part B in FIG. 3;
5 is a diagram illustrating an electrical flow of a semiconductor device according to an exemplary embodiment;
6 is a plan view for explaining the arrangement of components;
7 is an enlarged view of part C in FIG. 6;
8 is a plan view of a semiconductor device according to another embodiment,
9 is a conceptual diagram of a semiconductor device package according to an exemplary embodiment;
10 is a plan view of a semiconductor device package according to an exemplary embodiment;
11 is a flowchart illustrating a method of manufacturing a semiconductor device according to an exemplary embodiment.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

However, the technical idea of the present invention is not limited to some of the described embodiments, but may be implemented in a variety of different forms, and if it is within the scope of the technical idea of the present invention, one or more of the components among the embodiments can be selectively selected. can be used by combining and substituting.

In addition, terms (including technical and scientific terms) used in the embodiments of the present invention, unless explicitly specifically defined and described, can be generally understood by those of ordinary skill in the art to which the present invention belongs. It can be interpreted as meaning, and commonly used terms, such as terms defined in a dictionary, can be interpreted in consideration of contextual meanings of related technologies.

Also, terms used in the embodiments of the present invention are for describing the embodiments and are not intended to limit the present invention.

In this specification, the singular form may also include the plural form unless otherwise specified in the phrase, and when described as "at least one (or more than one) of A and (and) B and C", A, B, and C are combined. may include one or more of all possible combinations.

Also, terms such as first, second, A, B, (a), and (b) may be used to describe components of an embodiment of the present invention.

These terms are only used to distinguish the component from other components, and the term is not limited to the nature, order, or order of the corresponding component.

In addition, when a component is described as being 'connected', 'coupled' or 'connected' to another component, the component is not only directly connected to, combined with, or connected to the other component, but also with the component. It may also include the case of being 'connected', 'combined', or 'connected' due to another component between the other components.

In addition, when it is described as being formed or disposed on the "top (above) or bottom (bottom)" of each component, the top (top) or bottom (bottom) is not only a case where two components are in direct contact with each other, but also one A case in which another component above is formed or disposed between two components is also included. In addition, when expressed as "up (up) or down (down)", it may include the meaning of not only an upward direction but also a downward direction based on one component.

The semiconductor structure according to the embodiment of the present invention may output light in the ultraviolet wavelength range. Illustratively, the semiconductor structure may output light (UV-A) in a near-ultraviolet wavelength range, may output light (UV-B) in a far-ultraviolet wavelength range, or emit light (UV-C) in a deep ultraviolet wavelength range. can be printed out. The wavelength range may be determined by the composition ratio of Al of the semiconductor structure 120 . In addition, the semiconductor structure may output light of various wavelengths having different light intensities, and the peak wavelength of light having the strongest intensity relative to the intensity of other wavelengths among the wavelengths of light emitted is near-ultraviolet, far-ultraviolet, or deep-ultraviolet. It can be ultraviolet.

Illustratively, the light (UV-A) in the near ultraviolet wavelength range may have a wavelength ranging from 320 nm to 420 nm, and the light (UV-B) in the far ultraviolet wavelength range may have a wavelength ranging from 280 nm to 320 nm. The light (UV-C) of the wavelength range may have a wavelength ranging from 100 nm to 280 nm.

1 is a plan view of a semiconductor device according to an exemplary embodiment, FIG. 2 is a cross-sectional view taken along line II′ in FIG. 1 , FIG. 3 is an enlarged view of part A in FIG. 2 , and FIG. 4 is a view of part B in FIG. is an enlargement

Referring to FIGS. 1 and 2 , a semiconductor device 10 according to an exemplary embodiment includes a plurality of semiconductors including a first conductivity type semiconductor layer 121 , a second conductivity type semiconductor layer 123 , and an active layer 122 . The structure 120, the first electrode 141 electrically connected to the first conductivity type semiconductor layer 123, the second electrode 142 electrically connected to the second conductivity type semiconductor layer, and the semiconductor structure 120 The second conductive layer 152 and the first electrode 141 electrically connected to the first insulating layer 131 and the second electrode 142 partially disposed below and disposed below the first insulating layer 131, and Electrically connected, the first conductive layer 151 disposed under the first insulating layer, the second insulating layer 132 disposed below the first insulating layer 131 and the second conductive layer 152, the second A connection electrode 143 disposed under the insulating layer 132 and electrically connected to an adjacent semiconductor structure, a third insulating layer 133 disposed under the connection electrode 143, and disposed under the third insulating layer 133 It may include a bonding layer 160, a substrate 170 disposed under the bonding layer 160, and a semiconductor structure.

First, the number of semiconductor structures 120 may be plural. The semiconductor device 10 according to the exemplary embodiment may include various numbers of semiconductor structures. Hereinafter, the semiconductor structure 120 will be described based on including the first semiconductor structure 120-1, the second semiconductor structure 120-2, and the third semiconductor structure 120-3.

Each of the plurality of semiconductor structures 120 may include a first conductivity type semiconductor layer 121 , an active layer 122 , and a second conductivity type semiconductor layer 123 . In this case, the first conductivity-type semiconductor layer 121, the active layer 122, and the second conductivity-type semiconductor layer 123 may be disposed in a first direction (X direction). Hereinafter, a first direction (X direction), which is the thickness direction of each layer, is defined as a vertical direction, and a second direction (Y direction) perpendicular to the first direction (X direction) is defined as a horizontal direction. The third direction (Z direction) is perpendicular to both the first direction (X direction) and the second direction (Y direction).

The first conductivity-type semiconductor layer 121 may be implemented with a compound semiconductor such as group III-V or group II-VI, and may be doped with a first dopant. The first conductivity-type semiconductor layer 121 is a semiconductor material having a composition formula of Inx1Aly1Ga1-x1-y1N (0≤x1≤1, 0≤y1≤1, 0≤x1+y1≤1), for example, GaN, AlGaN, It may be selected from InGaN, InAlGaN, and the like. Also, the first dopant may be an n-type dopant such as Si, Ge, Sn, Se, or Te. When the first dopant is an n-type dopant, the first conductivity-type semiconductor layer 121 doped with the first dopant may be an n-type semiconductor layer.

The active layer 122 may be disposed between the first conductivity type semiconductor layer 121 and the second conductivity type semiconductor layer 123 . The active layer 122 may be a layer in which electrons (or holes) injected through the first conductivity-type semiconductor layer 121 and holes (or electrons) injected through the second conductivity-type semiconductor layer 123 are recombinated. As electrons and holes recombine in the active layer 122 , electrons transition to a lower energy level, and light having a wavelength corresponding to the band gap energy of a well layer included in the active layer 122 , which will be described later, can be generated. Among the wavelengths of light emitted by the semiconductor device, a wavelength of light having a relatively highest intensity may be ultraviolet rays, and the ultraviolet rays may include the above-described near ultraviolet rays, far ultraviolet rays, and deep ultraviolet rays.

The active layer 122 may have a structure of any one of a single well structure, a multi-well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, or a quantum wire structure, and the active layer 122 The structure of is not limited to this.

The second conductivity type semiconductor layer 123 is formed on the active layer 122 and may be implemented with a compound semiconductor such as group III-V or group II-VI. Dopants may be doped. The second conductive semiconductor layer 123 is a semiconductor material having a composition formula of Inx5Aly2Ga1-x5-y2N (0≤x5≤1, 0≤y2≤1, 0≤x5+y2≤1) or AlInN, AlGaAs, GaP, GaAs , GaAsP, may be formed of a material selected from AlGaInP. When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, the second conductivity-type semiconductor layer 123 doped with the second dopant may be a p-type semiconductor layer.

Additionally, an electron blocking layer (not shown) may be disposed between the active layer 122 and the second conductivity type semiconductor layer 123 . In the electron blocking layer (not shown), electrons supplied from the first conductivity type semiconductor layer 121 to the active layer 122 do not recombine in the active layer 122 and do not emit light, but escape into the second conductivity type semiconductor layer 123. By blocking the outgoing flow, it is possible to increase the probability of recombination of electrons and holes in the active layer 122 . An energy bandgap of the electron blocking layer (not shown) may be larger than that of the active layer 122 and/or the second conductive semiconductor layer 123 .

The electron blocking layer (not shown) is a semiconductor material having a composition formula of In _x1 Al _y1 Ga _{1 -x1- y1} N (0≤x1≤1, 0≤y1≤1, 0≤x1+y1≤1), for example For example, it may be selected from AlGaN, InGaN, InAlGaN, etc., but is not limited thereto. In the electron blocking layer (not shown), a first layer (not shown) having a high aluminum composition and a second layer (not shown) having a low aluminum composition may be alternately disposed.

Also, all of the first conductivity type semiconductor layer 121, the active layer 122, and the second conductivity type semiconductor layer 123 may include aluminum. Accordingly, the first conductivity type semiconductor layer 121, the active layer 122, and the second conductivity type semiconductor layer 123 may be AlGaN. However, it is not necessarily limited to this.

In addition, when the first conductivity-type semiconductor layer 121, the active layer 122, and the second conductivity-type semiconductor layer 123 all include aluminum, the electron blocking layer (not shown) has an aluminum composition of 50% to 50%. It can be 90%. When the aluminum composition of the electron blocking layer (not shown) is less than 50%, the height of the energy barrier for blocking electrons may be insufficient and light emitted from the active layer 122 may be absorbed by the electron blocking layer (not shown). In addition, when the aluminum composition exceeds 90%, the electrical characteristics of the semiconductor device may be deteriorated.

Also, the semiconductor structure 120 may include a first recess 127 and a second recess 128 . In the following, a case in which the semiconductor structure 120 includes both the first recess 127 and the second recess 128 will be described.

First, the first recess 127 may pass through the second conductive semiconductor layer 123 and the active layer 122 in each of the semiconductor structures 120-1, 120-2, and 120-3. Also, the first recess 127 may be disposed to pass through a partial region of the first conductivity type semiconductor layer 121 . Accordingly, a portion of the first conductivity type semiconductor layer 121 may be exposed by the first recess 127 . Also, the first recess 127 may be disposed in each of the semiconductor structures 120-1, 120-2, and 120-3. Also, the first recess 127 may be disposed inside the second recess 128 in each semiconductor structure 120 .

Also, as will be described later, when the second recesses 128 are continuously disposed, the first recesses 127 on a plane (XY plane) may be surrounded by the second recesses 128 .

Also, the first recess 127 may be disposed in an active area RA, which will be described later, that is, the first recess 127 may overlap the active area RA in a vertical direction (X direction). .

In addition, a first electrode 141 to be described later may be disposed in the first recess 127 , and current may be injected into the first conductive semiconductor layer 123 through the first electrode 141 .

The second recess 128 may be disposed to pass through the second conductivity type semiconductor layer 123 and the active layer 122 and to penetrate a partial region of the first conductivity type semiconductor layer 121 . Accordingly, the first conductivity type semiconductor layer 121 may be partially exposed through the second recess 128 . Also, the second recess 128 may be disposed in each of the semiconductor structures 120-1, 120-2, and 120-3.

In addition, the second recess 128 may be disposed to extend adjacent to an edge of each of the semiconductor structures 120-1, 120-2, and 120-3. At this time, the second recesses 128 may be continuously or discontinuously disposed. For example, when the second recesses 128 are continuously arranged, the second recesses 128 on a plane (XY plane) may have a closed loop shape in the semiconductor structure 128 . Hereinafter, a description will be made based on the closed loop type.

Also, the second recess 128 may divide each of the semiconductor structures 120-1, 120-2, and 120-3 into an active region RA and an inactive region RI. Here, the active region RA is located inside the second recess 128 in each semiconductor structure 120-1, 120-2, and 120-3, and the non-active region RI is located inside each semiconductor structure 120-1. , 120-2, 120-3) may be located outside the second recess 128. (As described above, the description has been made based on the case where the second recess 128 has a closed loop shape, but even when the second recess 128 is discontinuously disposed, the active area and the inactive area are the same However, in this case, the active region and the inactive region are formed on a virtual line extending and connecting the second recess 128 along the edge of each of the semiconductor structures 120-1, 120-2, and 120-3. partitioned by).

Thus, in each of the semiconductor structures 120-1, 120-2, and 120-3, the active layer 122 of the active region RA and the active layer 122 of the inactive region RI may be spaced apart from each other. And, in each of the semiconductor structures 120-1, 120-2, and 120-3, the active layer 122 of the active region RA is disposed adjacent to the first recess 127, and the combination of electrons and holes occurs. can be an area. In contrast, since the active layer 122 in the inactive region RI is spaced apart from the active layer 122 of the active region RA and disposed closer to the edge of the semiconductor structure 120 than the first recess 127, , it may be a non-emission region in which electron and hole coupling does not occur.

With this configuration, the passivation layer 180 surrounding the side and upper surfaces of each of the semiconductor structures 120-1, 120-2, and 120-3 provides heat generated by the light emission of the semiconductor device 10, high temperature outside, high humidity, Even if peeling, cracks, etc. occur due to differences in thermal expansion coefficients between the plurality of semiconductor structures 120, moisture or contaminants penetrating into each semiconductor structure 120-1, 120-2, 120-3 from the outside, the light emitting area The active layer 122 of the phosphorus active region RA may be prevented from being oxidized.

Specifically, in the semiconductor device described herein, the second recess 128 may block a direct connection between the active layer 122 of the active region RA and the active layer 122 of the inactive region RI. Thus, when the active layer 122 of the inactive region RI adjacent to the sidewall of the semiconductor structure 120 is exposed to the outside due to exfoliation, the active layer 122 of the inactive region RI may be oxidized. However, due to the separation by the second recess 128, the active layer 122 of the active region RA and the active layer 122 of the inactive region RI are spaced apart from each other, so that the active layer 122 of the active region RA can be protected from the oxidation. That is, the second recess 128 may protect the active layer 122 of the light emitting region from being oxidized from external moisture.

In particular, when the semiconductor device generates ultraviolet light, the active layer 122 may be more vulnerable to oxidation because the energy band gap and Al concentration of the active layer 122 increase compared to the case where visible light is generated. Accordingly, the semiconductor device described in this specification can greatly improve reliability when generating ultraviolet light.

In addition, since the semiconductor structure 120 has a high bandgap energy when generating ultraviolet light, the current dissipation characteristic of the semiconductor structure 120 may deteriorate and an effective light emitting area may decrease.

For example, in order to emit ultraviolet light when the semiconductor structure 120 is composed of a GaN-based compound semiconductor, the semiconductor structure is Al _x Ga _(1-x) N (0≤x≤1) containing a large amount of Al. may consist of Here, as the x value meaning the Al content increases, the resistance of the semiconductor structure 120 may also increase, and current dispersion and current injection characteristics of the semiconductor structure 120 may deteriorate. In this case, current spreading within the semiconductor structure 120 may be performed in the active region RA. Thus, the semiconductor device 10 described herein may maintain light output even if the second recess 128 is present. In addition, as described above, the region where the second recess 128 is oxidized by moisture or the like is the outer region of the second recess 128 in each of the semiconductor structures 120-1, 120-2, and 120-3. Light output may be maintained by protecting the active layer 122 positioned in the effective light emitting region (eg, the active region RA) from oxidation by limiting the active layer 122 to the active region RI (eg, the inactive region RI).

In addition, the second recess 128 may be formed in various shapes. For example, the second recess 128 may have a different shape according to the shape of each of the semiconductor structures 120-1, 120-2, and 120-3. For example, when each of the semiconductor structures 120-1, 120-2, and 120-3 has a circular shape, the second recess 128 may have a circular shape. However, it is not limited to these shapes.

The first electrode 141 may be disposed in the first recess 127 and electrically connected to the first conductive semiconductor layer 121 . In addition, the first electrode 141 may be disposed on the low-concentration layer of the active layer 122 to secure relatively smooth current injection characteristics. That is, it is preferable that the first recess 127 is formed up to a region of the low-concentration layer of the first conductivity type semiconductor layer 121 . This is because the high-concentration layer of the first conductivity-type semiconductor layer 121 has a relatively low current diffusion characteristic due to a high concentration of Al.

Also, since the first electrode 141 is disposed inside the second recess 128, it may overlap the active region RA in a vertical direction (X direction). And when current is injected through the first electrode 141, the semiconductor structure 120 may generate light.

The second electrode 142 may be disposed below the second conductivity type semiconductor layer 123 and electrically connected to the second conductivity type semiconductor layer 123 . Also, since the second electrode 142 is disposed inside the second recess 128, it may overlap the active region RA in a vertical direction (X direction).

The first electrode 141 and the second electrode 142 may be ohmic electrodes. The first electrode 141 and the second electrode 142 include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), and indium gallium zinc oxide (IGZO). ), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, or Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, It may be formed including at least one of Ru, Mg, Zn, Pt, Au, and Hf, but is not limited to these materials. Illustratively, the first electrode 141 may have a plurality of metal layers (eg, Cr/Al/Ni), and the second electrode may be ITO.

The first insulating layer 131 may be disposed under the semiconductor structure 120 to electrically separate the first electrode 141 from the active layer 122 and the second conductive semiconductor layer 123 . Also, the first insulating layer 131 may electrically insulate the second electrode 142 and the second conductive layer 152 from the first conductive layer 151 .

In addition, the first insulating layer 131 may be disposed below the semiconductor structure 120 except for regions where the first electrode 141 and the second electrode 142 are disposed. That is, the first electrode 141 and the second electrode 142 are disposed in the region exposed by the first insulating layer 131, and the first conductivity type semiconductor layer 121 and the second conductivity type semiconductor layer 123 are respectively disposed. ) can be associated with In addition, the first insulating layer 131 may also be disposed between the semiconductor structures 120-1, 120-2, and 120-3. Thus, the semiconductor device 10 can prevent external moisture from penetrating into each of the semiconductor structures 120-1, 120-2, and 120-3 from the edge.

In addition, the first insulating layer 131 may be disposed in the second recess 128 to maintain insulation between the active layer 122 of the active region RA and the active layer 122 of the inactive region RI.

In the embodiment, the first insulating layer 131 is adjacent to the 1-1 insulating layer 131a disposed below each of the semiconductor structures 120-1, 120-2, and 120-3, and the semiconductor structures 120-1 and 120 -2, 120-3) may include a first-second insulating layer (131b) disposed between. Specifically, the 1-1st insulating layer 131a may be disposed to overlap each of the semiconductor structures 120-1, 120-2, and 120-3 in a first direction (X-axis direction). And the 1-2th insulating layer (131b) is disposed between each of the semiconductor structures (120-1, 120-2, 120-3), each of the semiconductor structures (120-1, 120-2, 120-3) and the first They may not overlap in the direction (X-axis direction). By this configuration, the 1-1st insulating layer 131a provides electrical separation between each layer in each of the semiconductor structures 120-1, 120-2, and 120-3, and the 1-2nd insulating layer 131b may provide electrical isolation between adjacent semiconductor structures 120-1, 120-2, and 120-3.

And the first insulating layer 131 may be formed by selecting at least one from the group consisting of SiO ₂ , SixOy, Si ₃ N ₄ , SixNy, SiOxNy, Al ₂ O ₃ , TiO ₂ , AlN, and the like, but is not limited thereto. don't The first insulating layer 131 may be formed as a single layer or multiple layers. For example, the first insulating layer 131 may be a multi-layer distributed Bragg reflector (DBR) including Si oxide or a Ti compound. However, the first insulating layer 131 is not necessarily limited thereto and may include various reflective structures.

In addition, when the first insulating layer 131 performs a reflective function, light emitted from the active layer 122 toward the side surface is upwardly reflected to improve light extraction efficiency. In this case, as the number of first recesses 127 increases, light extraction efficiency may be more effective.

The second insulating layer 132 may be disposed under the first insulating layer 131 , the semiconductor structure 120 and the first electrode 141 . In addition, the second insulating layer 132 may be disposed below the second conductive layer 152 to be described later.

Also, the second insulating layer 132 may include a plurality of through holes. This will be described in detail in FIG. 3 .

Also, the second insulating layer 132 and the first insulating layer 131 may be made of the same material or different materials. In addition, since a separate second insulating layer 132 is disposed on the first insulating layer 131, it is difficult for defects formed in the first insulating layer 131 to propagate to the second insulating layer 132, so that the second insulating layer ( 132) may serve to block the propagation of defects at the interface between the first insulating layer 131 and the second insulating layer 132.

In addition, the first insulating layer 131 and the second insulating layer 132 are melted by heat during the process to form a single layer, or the first insulating layer 131 and the second insulating layer 132 are formed in at least some areas. ) may not exist. Accordingly, even when observed using transmission electron microscopy (TEM) or the like, the interface between the first insulating layer 131 and the second insulating layer 132 may be seen as one layer in at least a partial area. Also, the first insulating layer 131 and the second insulating layer 132 may be formed in a single process. The above description may equally be applied between the third insulating layer 133 and the second insulating layer 132 or between the third insulating layer 133 and the first insulating layer 131 .

The second insulating layer 132 is adjacent to the 2-1 insulating layer 132a disposed below each of the semiconductor structures 120-1, 120-2, and 120-3, and the adjacent semiconductor structures 120-1, 120-2, 120-3) may include a 2-2 insulating layer 132b disposed between them.

The first conductive layer 151 may be disposed under the second insulating layer 132 and the first electrode 141 . The first conductive layer 151 may be disposed in the first through hole h1 of the second insulating layer 132 to be described later and electrically connected to the first electrode 141 . Also, the first conductive layer 151 may be disposed under any one semiconductor structure among the plurality of semiconductor structures 120-1, 120-2, and 120-3. For example, the first conductive layer 151 may be disposed under the first semiconductor structure 120-1 to overlap with the first semiconductor structure 120-1 in a first direction (X-axis direction). And the first conductive layer 151 is disposed between the substrate 170 to be described later and the first conductive semiconductor layer 121 of the first semiconductor structure 120-1, and the first conductive semiconductor layer 121 and the substrate (170) can be electrically connected.

Also, according to the embodiment, since the second insulating layer 132 is disposed under the first insulating layer 131 in the region between the first electrode 141 and the second electrode 142, the second insulating layer 132 ), the first insulating layer 131 can prevent penetration of external moisture and/or other contaminants even when a defect occurs. Also, the first conductive layer 151 may be made of a material having excellent reflectivity. For example, the first conductive layer 151 may include a metal such as Ti or Ni.

The second conductive layer 152 may be disposed under the second electrode 142 and cover the second electrode 142 . The second conductive layer 152 extends to the outside of the semiconductor device 10, and the second electrode pad 166, the second conductive layer 152, and the second electrode 142 form one electrical channel. can do.

In addition, the second conductive layer 152 is disposed below the first insulating layer 131 and may contact the first insulating layer 131 . Also, the second conductive layer 152 may be made of a material having good adhesion to the first insulating layer 131 . For example, the second conductive layer 152 may be made of at least one material selected from the group consisting of materials such as Cr, Ti, Ni, Au, and alloys thereof, and may be made of a single layer or a plurality of layers. .

In addition, the second conductive layer 152 may be disposed between the first insulating layer 131 and the second insulating layer 132 described below. Accordingly, the second conductive layer 152 may be protected by the first insulating layer 131 and the second insulating layer 132 from permeation of external moisture or contaminants.

Also, the second conductive layer 152 may be disposed inside the semiconductor device 10 so as not to be exposed at an edge of the semiconductor device 10 . For example, the second conductive layer 152 may be disposed inside each of the semiconductor structures 120-1, 120-2, and 120-3.

In addition, the second conductive layer 152 may be partially disposed between the first insulating layer 131 and the second electrode 142 . Accordingly, the second insulating layer 132 is disposed below the first insulating layer 131 to easily protect each of the semiconductor structures 120-1, 120-2, and 120-3.

In addition, the second conductive layer 152 may be disposed to overlap the second recess 128 in the first direction (X-axis direction) in each of the semiconductor structures 120-1, 120-2, and 120-3. . According to this configuration, since the area of the second conductive layer 152 increases and the resistance decreases, the efficiency of light emitted from each of the semiconductor structures 120-1, 120-2, and 120-3 can be improved.

In addition, the second conductive layer 152 may extend to the outside of any one of the semiconductor structures 120-1, 120-2, and 120-3. For example, the second conductive layer 152 may extend to the outside of the third semiconductor structure 120-3. That is, the second conductive layer 152 includes the 2-1 conductive layer 152a and the 2-2 conductive layer 152b overlapping each of the semiconductor structures 120-1, 120-2, and 120-3. can do. This will be described in detail in FIG. 6 .

In addition, a reflective layer (not shown) may be disposed on the second conductive layer 152 . A reflective layer (not shown) may be disposed between the second electrode 142 and the second conductive layer 152 , and may be specifically disposed under the second electrode 142 .

Also, a reflective layer (not shown) may electrically connect the second electrode 142 and the second conductive layer 152 . Accordingly, when a reflective layer (not shown) is present, the second electrode pad 166, the second conductive layer 152, the reflective layer (not shown), and the second electrode 142 form one electrical channel. can do.

In addition, the reflective layer (not shown) may be made of a material having high reflectivity, and may include any one of Ag and Rh, but is not limited to such a material.

The connection electrode 143 may be electrically connected to an adjacent semiconductor structure. For example, the connection electrode 143 may electrically connect the first semiconductor structure 120-1 and the second semiconductor structure 120-2. Also, the connection electrode 143 may electrically connect the second semiconductor structure 120-2 and the third semiconductor structure 120-3.

More specifically, the connection electrode 143 may electrically connect the second conductivity-type semiconductor layer of one semiconductor structure and the first conductivity-type semiconductor layer of another semiconductor structure among adjacent semiconductor structures.

In an embodiment, the connection electrode 143 penetrates the second insulating layer 132 (refer to the second through hole h2 of FIG. 3) to form the second conductive layer 152 of the first semiconductor structure 120-1. and can be electrically connected. Also, the connection electrode 143 may extend to the lower portion of the second insulating layer 132 of the second semiconductor structure 120 - 2 along the lower portion of the second insulating layer 132 . In addition, the connection electrode 143 may be in contact with and electrically connected to the first electrode 141 of the second semiconductor structure 120-2. Accordingly, the connection electrode 143 is one between the second conductivity type semiconductor layer 123 of the first semiconductor structure 120-1 and the first conductivity type semiconductor layer 121 of the second semiconductor structure 120-2. of electrical channels.

Similarly, the connection electrode 143 passes through the second insulating layer 132 (refer to the second through hole h2 in FIG. 3) and contacts the second conductive layer 152 of the second semiconductor structure 120-2, can be electrically connected. Further, the connection electrode 143 may extend to the lower portion of the second insulating layer 132 of the third semiconductor structure 120 - 3 along the lower portion of the second insulating layer 132 . In addition, the connection electrode 143 may be in contact with and electrically connected to the first electrode 141 of the third semiconductor structure 120-3. Accordingly, the connection electrode 143 is one between the second conductivity type semiconductor layer 123 of the second semiconductor structure 120-2 and the first conductivity type semiconductor layer 121 of the third semiconductor structure 120-3. of electrical channels. Due to this configuration, the connection electrode 143 may electrically connect the first semiconductor structure 120-1, the second semiconductor structure 120-2, and the third semiconductor structure 120-3 to each other.

The third insulating layer 133 may be disposed under the connection electrode, the second insulating layer 132 and the first conductive layer 151 . More specifically, the third insulating layer 133 may not be disposed under any one semiconductor structure among the plurality of semiconductor structures 120-1, 120-2, and 120-3. Accordingly, any one semiconductor structure may be electrically connected to the substrate 170 to be described later. For example, the third insulating layer 133 may be disposed under the second semiconductor structure 120-2 and the third semiconductor structure 120-3. However, the third insulating layer 133 may be disposed so that a partial region is exposed under the first semiconductor structure 120-1. Accordingly, the third insulating layer 133 is not disposed in a partial region of the first conductive layer 151, so that the first conductive layer 151, the substrate 170, and the bonding layer 160 can be electrically connected. . In addition, current may be injected into the first conductivity-type semiconductor layer 121 of the first semiconductor structure 120-1.

The third insulating layer 133 may be formed by selecting at least one from the group consisting of SiO ₂ , SixOy, Si ₃ N ₄ , SixNy, SiOxNy, Al ₂ O ₃ , TiO ₂ , AlN, and the like, but is not limited thereto. . Also, the third insulating layer 133 may be formed as a single layer or multiple layers. For example, the third insulating layer 133 may be a multi-layer distributed Bragg reflector (DBR) including Si oxide or a Ti compound. However, the first insulating layer 133 is not necessarily limited thereto and may include various reflective structures.

The bonding layer 160 may be disposed under the semiconductor structure 120 . More specifically, the bonding layer 160 may be disposed below the third insulating layer 133 and the first conductive layer 151 . However, when there is no first conductive layer 151, it may directly contact the first electrode 141 of the first semiconductor structure 120-1.

In addition, the bonding layer 160 may bond the substrate 170 and the first conductive layer 151 to be described later, and may be electrically connected to the substrate 170 and the first conductive layer 151 as described above. . Also, the bonding layer 160 may include a conductive material. For example, the bonding layer 160 may include a material selected from the group consisting of gold, tin, indium, aluminum, silicon, silver, nickel, and copper, or an alloy thereof.

The substrate 170 may be made of a conductive material. For example, the substrate 170 may include a metal or semiconductor material. The substrate 170 may be a metal having excellent electrical conductivity and/or thermal conductivity. In this case, heat generated during the operation of the semiconductor device 10 can be quickly released to the outside. Also, when the substrate 170 is made of a conductive material, the first electrode 141 may receive current from the outside through the substrate 170 .

The substrate 170 may include a material selected from the group consisting of silicon, molybdenum, silicon, tungsten, copper, and aluminum, or an alloy thereof.

The passivation layer 180 may be disposed on top and side surfaces of each of the semiconductor structures 120-1, 120-2, and 120-3. The thickness of the passivation layer 180 may be greater than or equal to 200 nm and less than or equal to 500 nm. When it is 200 nm or more, the electrical and optical reliability of the device can be improved by protecting the device from external moisture or foreign substances, and when it is 500 nm or less, the stress applied to the semiconductor device can be reduced, and the optical and electrical reliability of the semiconductor device is improved. It is possible to improve the problem that the unit price of the semiconductor device increases as the process time of the semiconductor device decreases or the process time of the semiconductor device increases.

An upper surface of the semiconductor structure 120 may have irregularities. These irregularities may improve extraction efficiency of light emitted from the semiconductor structure 120 . The irregularities may have different average heights depending on the wavelength of ultraviolet light, and in the case of UV-C, light extraction efficiency may be improved when they have a height of about 300 nm to 800 nm, and an average height of about 500 nm to 600 nm.

Referring to FIG. 3 , the plurality of semiconductor structures 120-1, 120-2, and 120-3 may be spaced apart from each other. For example, the first semiconductor structure 120-1 and the second semiconductor structure 120-2 may be spaced apart from each other.

In addition, between the first semiconductor structure 120-1 and the second semiconductor structure 120-2 may include a concave groove (G) in the direction from the substrate 170 toward the semiconductor structure 120. In addition, the first and second insulating layers 131b may be disposed in the groove G. That is, the first and second insulating layers 131b are disposed in the groove G so that adjacent semiconductor structures (eg, the first semiconductor structure 120-1 and the second semiconductor structure 120-2) are electrically connected to each other. can be kept separate.

In addition, the 2-2 insulating layer 132b may be disposed under the 1-2 insulating layer 131 b and overlap with the 1-2 insulating layer 131 b in a first direction (X-weight direction). With this configuration, light emitted to the side is reflected by the 1-2nd insulating layer 131b and the 2-2nd insulating layer 132b, so that the light output of the semiconductor device can be improved.

In addition, the 2-1st insulating layer 132a may include a first through hole h1 disposed under the first electrode 141 so as to overlap the first electrode 141 in a first direction (X-axis direction). can The first conductive layer 151 is disposed in the first through hole h1 so that the first conductive layer 151 can form an electrical channel with the first electrode 141 .

Also, the 2-1st insulating layer 132a may include a second through hole h2. The second through hole h2 may be disposed between the first recess 127 and the second recess 128 . With this configuration, the separation distance between the second electrode 142 and the connection electrode 143 disposed between the first recess 127 and the second recess 128 is reduced, thereby reducing the resistance along the electrical path. can Also, the second through hole h2 may be disposed to overlap the second conductive layer 152 and the connection electrode 135 . Accordingly, the connection electrode 143 is disposed in the second through hole h2 so that the connection electrode 143 can be electrically connected to the second conductive layer 152 .

Also, the first through hole h1 and the second through hole h2 may be disposed inside the second recess 128 of each semiconductor structure. According to this configuration, current is concentrated and injected into the inner region of the second recess 128 in each semiconductor structure, and light extraction efficiency may be improved.

The connection electrode 143 may be spaced apart from and electrically separated from the first conductive layer 151 . In addition, a portion of the third insulating layer 133 is disposed between the first conductive layer 151 and the connection electrode 143 to prevent the first conductive layer 151 and the connection electrode 143 from being electrically connected to each other. can do.

Also, the connection electrode 143 may extend from a lower portion of the first semiconductor structure 120-1 to a lower portion of a second semiconductor structure 120-2 adjacent to the first semiconductor structure 120-1. Accordingly, a portion of the connection electrode 143 may be disposed to overlap the groove G in the first direction (X-axis direction). In addition, by this configuration, electrical connection can be made between adjacent semiconductor structures as described above.

Also, the thickness d1 of the first recess 127 in the first direction may be the same as the thickness d2 of the second recess 128 in the first direction. Accordingly, the first recess 127 and the second recess 128 may overlap on a plane (YZ plane). In addition, since the first recess 127 and the second recess 128 may be formed in the same process, an effect of reducing process time may be provided.

Also, the thickness d1 of the first recess 127 in the first direction may be equal to the thickness d3 of the groove G in the first direction. In addition, the thickness d2 of the second recess 128 in the first direction may be equal to the thickness d3 of the groove G in the first direction. Accordingly, the 1-2 insulating layer 131 b and the 2-2 insulating layer 132 b may be disposed between the active layers 122 of adjacent semiconductor structures 120-1, 120-2, and 120-3. . By this configuration, even if the passivation layer 180 is peeled off, external substances, moisture, etc. are prevented from penetrating into the active layer 122 disposed on the opposite edge between the adjacent semiconductor structures 120-1, 120-2, and 120-3. can be easily prevented.

However, the thickness d1 of the first recess 127 in the first direction is equal to the thickness d2 of the second recess 128 in the first direction and the thickness d3 of the groove G in the first direction. They may be designed differently. However, here, in order to reduce the process time, the thickness d1 of the first recess 127 in the first direction, the thickness d2 of the second recess 128 in the first direction, and the first thickness of the groove G The thickness d3 in all directions is the same.

Referring to FIG. 4 , the second conductive layer 152 may include the 2-1 conductive layer 152a and the 2-2 conductive layer 152b as described above. Here, the 2-1st conductive layer 152a is a region overlapping the semiconductor structure 120 in the first direction in the second conductive layer 152, and the 2-2nd conductive layer 152b is the semiconductor structure 120 It is an area that does not overlap with the first direction.

Specifically, the conductive layer 150 may include a plurality of holes h so as not to be electrically connected to the first electrode 141 in the first recess 127, and the plurality of holes h may include the first electrode 141 in the first recess 127. The maximum width may be greater than that of the recess 127, but is not limited to this structure.

Also, as described above, the conductive layer 150 may be electrically connected to the electrode pad 166 through the 2-2 conductive layer 152b that does not overlap the semiconductor structure 120 in the first direction. That is, the 2-2nd conductive layer 152b may extend toward the electrode pad 166 from the 2-1st conductive layer 152a. In addition, the 2-2nd conductive layer 152b may extend toward an outer surface of the semiconductor device. Accordingly, the second conductive layer 152b may be disposed between the semiconductor structure 120 and the outermost surface of the substrate 170 .

Also, the 2-1st conductive layer 151a may be disposed in the second recess 128 . That is, the 2-1st conductive layer 151a may be disposed to overlap the second recess 128 in the first direction. With this configuration, the 2-1 conductive layer 151a partially extends the length of each layer under the second recess 128 protruding toward the semiconductor structure 120 by the structure of the second recess 128. can compensate Accordingly, reliability of the semiconductor device may be improved.

5 is a diagram illustrating an electrical flow of a semiconductor device according to an exemplary embodiment.

Referring to FIG. 5 , when power having different polarities is supplied to the substrate and electrode pads of the semiconductor device, current may flow through the semiconductor device. Hereinafter, the electrical flow of the semiconductor device will be described with the substrate 170 as a starting point.

First, electrical flow may be made through the substrate 170, the bonding layer 160, and the first conductive layer 151 (C1). Afterwards, electrical flow may occur into the first semiconductor structure 120 - 1 through the first electrode 141 connected to the first conductive layer 151 and the first conductive semiconductor layer 121 . That is, electrical flow may occur through the first conductivity type semiconductor layer 121 , the active layer 122 , and the second conductivity type semiconductor layer 123 . And the second electrode 142 disposed on the second conductive semiconductor layer 123, the second conductive layer 152 on the second electrode 142, and the connection electrode 143 connected to the second conductive layer 152 As a result, electrical flow may occur (C3). That is, the connection electrode 143 is electrically connected to the first conductivity type semiconductor layer 121 of the second semiconductor structure 120-2 in the second conductivity type semiconductor layer 123 of the first semiconductor structure 120-1. Being connected, an electrical flow may be generated from the second conductivity type semiconductor layer 123 of the first semiconductor structure 120-1 to the first conductivity type semiconductor layer 121 of the second semiconductor structure 120.

In addition, electrical flow may occur to the first conductivity type semiconductor layer 121, the active layer 122, and the second conductivity type semiconductor layer 123 in the second semiconductor structure 120-2 (C4). And the second electrode 142 disposed on the second conductive semiconductor layer 123, the second conductive layer 152 on the second electrode 142, and the connection electrode 143 connected to the second conductive layer 152 As a result, electrical flow may occur (C5). And the connection electrode 143 is electrically connected to the second conductivity type semiconductor layer 123 of the second semiconductor structure 120-2 and the first conductivity type semiconductor layer 121 of the third semiconductor structure 120-3. can Accordingly, an electrical flow may be generated from the second conductivity type semiconductor layer 123 of the first semiconductor structure 120 - 1 to the first conductivity type semiconductor layer 121 of the second semiconductor structure 120 . In addition, electrical flow may occur to the first conductivity type semiconductor layer 121, the active layer 122, and the second conductivity type semiconductor layer 123 in the third semiconductor structure 120-3 (C6).

And the second electrode 142 disposed on the second conductive semiconductor layer 123, the second conductive layer 152 on the second electrode 142, and the electrode pad 166 connected to the second conductive layer 152 As a result, electrical flow may occur (C7).

6 is a plan view for explaining the arrangement of components, and FIG. 7 is an enlarged view of part C in FIG. 6 .

Referring to FIGS. 6 and 7 , in each of the semiconductor structures 120-1, 120-2, and 120-3, the first electrode 141 may be disposed at the innermost side. With this configuration, current injection into each of the semiconductor structures 120-1, 120-2, and 120-3 is facilitated through the first electrode 141, and the emitted light can be prevented from being concentrated in a partial region. .

And first, the second conductive layer 152 may be disposed outside the first electrode 141 in each of the semiconductor structures 120-1, 120-2, and 120-3. Here, the second conductive layer 152 overlaps each of the semiconductor structures 120-1, 120-2, and 120-3 in a vertical direction, so it means the 2-1 conductive layer 152a.

Also, the second electrode 142 may be disposed to overlap the second conductive layer 152 in the first direction. Accordingly, the second conductive layer 152 may cover the second electrode 142 . Accordingly, current injection into the second electrode 142 through the second conductive layer 152 may be facilitated. In addition, current spreading can be improved with the second conductivity type semiconductor layer.

A second recess 128 may be disposed outside the second electrode 142 . The second recess 128 may be surrounded by the second conductive layer 152 . Due to this configuration, the second conductive layer 152 may have a maximally increased area under each of the semiconductor structures 120-1, 120-2, and 120-3. Accordingly, electrical resistance due to the second conductive layer 152 is reduced, and current spraying may be improved in the semiconductor device according to the exemplary embodiment.

Also, outermost surfaces of the semiconductor structures 120-1, 120-2, and 120-3 may be disposed outside the second conductive layer 152. Also, each of the semiconductor structures 120 - 1 , 120 - 2 , and 120 - 3 may be positioned inside the outermost surface of the substrate 170 .

In addition, each of the semiconductor structures 120-1, 120-2, and 120-3 may include a first edge portion E1 and a second edge portion E2.

The first edge portion E1 may be an area facing an adjacent semiconductor structure. For example, the first edge portion E1 is the closest surface between the first semiconductor structure 120-1 and the second semiconductor structure 120-2, or the second semiconductor structure 120-2 and the third semiconductor structure 120. -3) It may include the side closest to the liver. The second edge portion E2 may be a surface other than the first edge portion E1.

The second recess 128 is adjacent to the first edge portion E1 and is disposed adjacent to the first recess portion 128a and the second edge portion E2 disposed along the first edge portion E1. A second recessed portion 128b disposed along the second edge portion E2 may be included.

In this case, the connection electrode may be disposed inside the second edge portion E2 in the adjacent semiconductor structure. Accordingly, the connection electrode may overlap the first edge portion E1 in the first direction and may not overlap the second edge portion E2 in the first direction. Also, the connection electrode may be partially disposed inside the adjacent first recessed portion 128a. Also, the connection electrode may not exist inside the second recessed portion 128b. And the connection electrode overlaps the first electrode 141 of any one semiconductor structure among the adjacent semiconductor structures in the first direction, and may not overlap the first electrode 141 of the other semiconductor structure in the first direction. . For example, the connection electrode does not overlap with the first electrode 141 of the first semiconductor structure 120-1 in the first direction, and does not overlap with the first electrode 141 of the second semiconductor structure 120-2 in the first direction. can be nested with With this configuration, the connection electrode can improve current spreading by increasing an area in contact with the first electrode while providing electrical connection between adjacent semiconductor structures.

8 is a plan view of a semiconductor device according to another embodiment.

Referring to FIG. 8 , the semiconductor device according to another embodiment, unlike the semiconductor device according to the above-described embodiment, includes a plurality of first electrodes 141 in each of the semiconductor structures 120-1, 120-2, and 120-3. It can be a dog, and it can be circular. Also, the connection electrode 143 may be disposed to overlap all the first electrodes 141 in the first direction in each of the semiconductor structures 120-1, 120-2, and 120-3. Components other than the first electrode 141 may be applied in the same manner as described above.

9 is a conceptual diagram of a semiconductor device package according to an exemplary embodiment, and FIG. 10 is a plan view of the semiconductor device package according to an exemplary embodiment.

Referring to FIG. 9 , the semiconductor device package includes a body 2 having a groove (opening) 3, a semiconductor device 10 disposed in the body 2, and a semiconductor device 10 disposed in the body 2. A pair of lead frames 5a and 5b electrically connected may be included. The semiconductor device 10 may include all of the above-described components.

The body 2 may include a material or coating layer that reflects ultraviolet light. The body 2 may be formed by stacking a plurality of layers 2a, 2b, 2c, 2d, and 2e. The plurality of layers 2a, 2b, 2c, 2d, and 2e may be made of the same material or may include different materials. Illustratively, the plurality of layers 2a, 2b, 2c, 2d, and 2e may include an aluminum material.

The groove 3 may be formed to become wider as it moves away from the semiconductor element, and a step 3a may be formed on the inclined surface.

The light-transmitting layer 4 may cover the groove 3 . The light-transmitting layer 4 may be made of glass, but is not necessarily limited thereto. The light-transmitting layer 4 is not particularly limited as long as it is made of a material capable of effectively transmitting ultraviolet light. The inside of the groove 3 may be an empty space.

Referring to FIG. 10 , a semiconductor device 10 may be disposed on a first lead frame 5a and connected to a second lead frame 5b by a wire 20 . At this time, the second lead frame 5b may be disposed to surround the side of the first lead frame.

11 is a flowchart illustrating a method of manufacturing a semiconductor device according to an exemplary embodiment.

First, referring to FIG. 11A , a semiconductor structure 120 may be grown. A semiconductor structure 120 may be grown on the first temporary substrate T. For example, the first conductivity type semiconductor layer 121, the active layer 122, and the second conductivity type semiconductor may be formed on the first temporary substrate T. Layer 123 may be grown.

The first temporary substrate T may be a growth substrate. For example, the first temporary substrate T may be formed of at least one of sapphire (Al2O3), SiC, GaAs, GaN, ZnO, Si, GaP, InP, or Ge, but is not limited thereto.

In addition, the semiconductor structure 120 may be, for example, Metal Organic Chemical Vapor Deposition (MOCVD), Chemical Vapor Deposition (CVD), Plasma-Enhanced Chemical Vapor Deposition (PECVD), It may be formed using methods such as Molecular Beam Epitaxy (MBE) and Hydride Vapor Phase Epitaxy (HVPE), but is not limited thereto.

Descriptions of the first conductivity-type semiconductor layer 121, the active layer 122, and the second conductivity-type semiconductor layer 123 may be applied in the same manner as described above.

Referring to FIG. 11B , a second recess 128 and a first recess 127 may be disposed in the semiconductor structure 120 . As described above, the first recess 127 and the second recess 128 may be formed by various etching methods. Also, a groove G may be disposed in the semiconductor structure 120 . Like the second recess 128, the first recess 127 penetrates the second conductivity type semiconductor layer 123 and the active layer 122 in the semiconductor structure 120, and the first conductivity type semiconductor layer 121 It is arranged to penetrate up to a part of the area. The groove G may be disposed to pass through the second conductive semiconductor layer 123 and the active layer 122 like the first recess 127 and the second recess 128 .

Also, the first recess 127 and the second recess 128 may be simultaneously formed by etching. In this way, both the second recess 128 and the first recess 127 may be formed in one process, and the process may be minimized. Also, as described above, the second recess 128 and the first recess 127 may have the same inclination angle and the same thickness in the vertical direction. However, the second recess 128 and the first recess 127 may have different horizontal widths. For example, the minimum width of the second recess 128 may be smaller than the minimum width of the first recess 127 . However, it is not limited to this process, and the second recess 128 and the first recess 127 may be disposed on the semiconductor structure 120 by different etching processes. The same may be applied to the relationship between the groove G and the first recess 127 or the second recess 128 .

Referring to FIG. 11C , a first insulating layer 131, a first electrode 141, and a second electrode 142 may be disposed. First, the first insulating layer 131 may be disposed, and the first electrode 141 and the second electrode 142 may be disposed. However, the manufacturing order of the first insulating layer 131, the first electrode 141, and the second electrode 142 may be variously applied.

As an embodiment, after disposing the first insulating layer 131 on the upper surface of the semiconductor structure 120, in the first insulating layer 131, at a position where the first electrode 141 and the second electrode 142 are disposed The first insulating layer 131 may be removed. That is, a portion of the first insulating layer 131 may be exposed so that the first electrode 141 and the second electrode 142 can be disposed.

For example, the first insulating layer 131 disposed in the first recess 127 may be partially removed to expose the first conductive semiconductor layer 121 . In addition, the first insulating layer 131 disposed inside the second recess 128 and in contact with the second conductivity type semiconductor layer 123 may be partially removed to expose the second conductivity type semiconductor layer 123 . In addition, the first electrode 141 and the second electrode 142 may be disposed in an area where the first conductivity-type semiconductor layer 121 is exposed and an area where the second conductivity-type semiconductor layer 123 is exposed, respectively. .

Accordingly, the first electrode 141 may be disposed on the top surface of the first conductivity type semiconductor layer 121 and in the first recess 127 to be electrically connected to the first conductivity type semiconductor layer 121 . The second electrode 142 may be disposed on the upper surface of the second conductivity type semiconductor layer 123 and electrically connected to the second conductivity type semiconductor layer 123 .

Referring to FIG. 11D , the second conductive layer 152 may be disposed on the first insulating layer 131 and the second electrode 142 . In this case, the second conductive layer 152 may be disposed to surround the second electrode 142 . Accordingly, the second conductive layer 152 may contact the second electrode 142 and be electrically connected to the second electrode 142 . Also, the first insulating layer 131 may electrically insulate the second conductive layer 152 and the first conductive semiconductor layer 121 .

A portion of the second conductive layer 152 may be disposed on the second recess 128 and may extend toward an edge of the semiconductor structure 120 . However, as described above, the second conductive layer 152 extends toward the electrode pad and may have a region that does not overlap with the second recess 128 in the vertical direction.

In addition, the second conductive layer 152 may be etched so as not to be exposed to the outer surface of the semiconductor device.

Referring to FIG. 11E , a second insulating layer 132 may be disposed on the semiconductor structure 120 . In addition, the second insulating layer 132 may be disposed to surround the second conductive layer 152 . In this case, the second insulating layer 132 may include a first through hole h1 and a second through hole h2. The first through hole h1 may be disposed on the first electrode 141 . Also, the second through hole h2 may be disposed on the second conductive layer 152 .

In addition, the second insulating layer 132 is disposed on the first insulating layer 131, the second conductive layer 152, and the first electrode 141 to form the first insulating layer 131 and the first electrode 141. It can be arranged to enclose. By this configuration, even if a crack occurs in the first insulating layer 131, the second insulating layer 132 can secondarily protect the semiconductor structure 120.

Referring to FIG. 11F , the connection electrode 143 and the first conductive layer 151 may be disposed on the second insulating layer 132 . First, the first conductive layer 151 may be disposed on one of the plurality of first through holes h1 and electrically connected to the first conductive semiconductor layer 121. . In addition, the connection electrode 143 has one side disposed in the first through hole h1 other than the first through hole h1 in which the first conductive layer 151 is disposed, and the other side disposed in the first through hole h1. It may be disposed within the adjacent second through hole h2. Either the first conductive layer 151 and the connection electrode 143 may be disposed first or may be disposed simultaneously through a process.

Referring to FIGS. 11G and 11H , a third insulating layer 133 may be disposed on the connection electrode 143 , the first conductive layer 151 and the second insulating layer 132 . After the third insulating layer 133 is applied, the third insulating layer 133 may be partially etched to expose a portion of the upper portion of the first conductive layer 151 . Accordingly, the upper surface of the first conductive layer 151 may be partially exposed. In addition, the third insulating layer 133 may be entirely disposed except for the exposed upper surface of the first conductive layer 151 .

Referring to FIG. 11I , a bonding layer 160 and a second substrate T′ may be disposed on the second conductive layer 151 . First, the bonding layer 160 may include a conductive material. For example, the bonding layer 160 may include a material selected from the group consisting of gold, tin, indium, aluminum, silicon, silver, nickel, and copper, or an alloy thereof.

Also, the second substrate T′ may be the same substrate as the substrate 170 in FIG. 1 . Accordingly, as described in FIG. 1 , the second substrate T′ may be made of a conductive material. For example, the second substrate T′ may include a metal or semiconductor material. The second substrate T′ may be a metal having excellent electrical conductivity and/or thermal conductivity. In this case, the heat generated during operation of the semiconductor device can be quickly dissipated to the outside. Also, when the second substrate T' is made of a conductive material, the first electrode 141 may receive current from the outside through the second substrate T'.

The second substrate T' may include a material selected from the group consisting of silicon, molybdenum, silicon, tungsten, copper, and aluminum, or an alloy thereof.

In addition, the bonding layer 160 and the second substrate T' may be disposed on the second insulating layer 132 and may be formed flat along the upper surface of the second insulating layer 132 . As a result, since generation of voids between interfaces is suppressed and peeling due to heat is also suppressed, bonding strength between components of the semiconductor device may be improved.

In addition, the first temporary substrate T may be separated from the semiconductor structure 120 . For example, the semiconductor structure 120 and the first temporary substrate T may be separated by irradiating a laser onto the first temporary substrate T. However, it is not limited to this method.

Referring to FIG. 11J , etching may be performed to form a plurality of semiconductor structures. For example, etching may be performed up to the upper surface of the groove (G). A passivation layer 180 may be disposed on the top and side surfaces of the semiconductor structure 120 .

In addition, before disposing the passivation layer 180, irregularities may be formed on the upper surface of each of the semiconductor structures 120-1, 120-2, and 120-3. These irregularities may improve extraction efficiency of light emitted from each of the semiconductor structures 120-1, 120-2, and 120-3. The irregularities may have different heights depending on the wavelength of light generated by the semiconductor structures 120-1, 120-2, and 120-3. In addition, the electrode pad 166 may be formed through a pattern. In this case, the electrode pad 166 may be disposed on the second conductive layer 152 extending outwardly of each of the semiconductor structures 120-1, 120-2, and 120-3. Accordingly, the electrode pad 166 forms an electrical path with the second conductive layer 152, and each of the semiconductor structures 120-1, 120-2, and 120-3 forms an electrical path through the connection electrode 143. In addition, any one of the semiconductor structures 120-1, 120-2, and 120-3 may form an electrical path with the substrate 170.

Also, the semiconductor structure 120 may be disposed on a lead frame of a semiconductor device package or a circuit pattern of a circuit board, as described above with reference to FIG. 10 . Semiconductor devices may be applied to various types of light source devices. For example, the light source device may include a sterilization device, a curing device, a lighting device, a display device, and a vehicle lamp. That is, the semiconductor element may be applied to various electronic devices disposed in a case to provide light.

The sterilization device may include the semiconductor device according to the embodiment to sterilize a desired area. The sterilization device may be applied to household appliances such as water purifiers, air conditioners, and refrigerators, but is not necessarily limited thereto. That is, the sterilization device can be applied to various products (eg, medical devices) requiring sterilization.

Illustratively, the water purifier may include a sterilization device according to the embodiment to sterilize circulating water. The sterilization device may be disposed at a nozzle through which water circulates or an outlet to irradiate ultraviolet rays. In this case, the sterilization device may include a waterproof structure.

The curing device may be provided with a semiconductor device according to an embodiment to cure various types of liquids. Liquid may be the lightest concept that includes all various materials that are hardened when irradiated with ultraviolet rays. Illustratively, the curing device may cure various types of resins. Alternatively, the curing device may be applied to curing cosmetic products such as nail polish.

The lighting device may include a light source module including a substrate and the semiconductor device of the embodiment, a heat dissipation unit dissipating heat from the light source module, and a power supply unit that processes or converts an electrical signal received from the outside and provides it to the light source module. Also, the lighting device may include a lamp, a head lamp, or a street lamp.

The display device may include a bottom cover, a reflector, a light emitting module, a light guide plate, an optical sheet, a display panel, an image signal output circuit, and a color filter. The bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may constitute a backlight unit.

The reflector is disposed on the bottom cover, and the light emitting module can emit light. The light guide plate may be disposed in front of the reflector to guide light emitted from the light emitting module forward, and the optical sheet may include a prism sheet and the like and be disposed in front of the light guide plate. A display panel may be disposed in front of the optical sheet, an image signal output circuit may supply an image signal to the display panel, and a color filter may be disposed in front of the display panel.

When the semiconductor device is used as a backlight unit of a display device, it may be used as an edge-type backlight unit or a direct-type backlight unit.

The semiconductor element may be a laser diode other than the light emitting diode described above.

Like the light emitting device, the laser diode may include the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer having the above structure. In addition, an electro-luminescence phenomenon in which light is emitted when a current is passed after bonding a p-type first conductivity type semiconductor and an n-type second conductivity type semiconductor is used, but the directionality of the emitted light There is a difference between and phase. That is, a laser diode can emit light having a specific wavelength (monochromatic beam) with the same phase and in the same direction by using a phenomenon called stimulated emission and a constructive interference phenomenon. Due to this, it can be used for optical communication, medical equipment, and semiconductor processing equipment.

A photodetector, which is a type of transducer that detects light and converts its intensity into an electrical signal, may be exemplified as the light receiving element. As such an optical detector, a photovoltaic cell (silicon, selenium), an optical output device (cadmium sulfide, cadmium selenide), a photodiode (eg, a PD having a peak wavelength in a visible blind spectral region or a true blind spectral region), a photodetector Transistors, photomultiplier tubes, photoelectric tubes (vacuum, gas filled), IR (Infra-Red) detectors, etc., but embodiments are not limited thereto.

In addition, a semiconductor device such as a photodetector may be fabricated using a direct bandgap semiconductor having excellent light conversion efficiency. Alternatively, photodetectors have various structures, and the most common structures include a pin type photodetector using a p-n junction, a Schottky type photodetector using a Schottky junction, and a Metal Semiconductor Metal (MSM) type photodetector. there is.

Like a light emitting device, a photodiode may include a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer having the above-described structure, and has a pn junction or pin structure. The photodiode operates by applying reverse bias or zero bias, and when light is incident on the photodiode, electrons and holes are generated and current flows. In this case, the size of the current may be substantially proportional to the intensity of light incident on the photodiode.

A photovoltaic cell or solar cell is a type of photodiode and can convert light into electric current. A solar cell, like a light emitting device, may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer having the above structure.

In addition, it can be used as a rectifier of an electronic circuit through the rectification characteristics of a general diode using a p-n junction, and can be applied to an oscillation circuit by being applied to a microwave circuit.

In addition, the above-described semiconductor device is not necessarily implemented as a semiconductor and may further include a metal material in some cases. For example, a semiconductor device such as a light receiving device may be implemented using at least one of Ag, Al, Au, In, Ga, N, Zn, Se, P, or As, and may be implemented using a p-type or n-type dopant. It may be implemented using a doped semiconductor material or an intrinsic semiconductor material.

Claims (10)

a plurality of semiconductor structures each including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer;
a first electrode electrically connected to the first conductivity type semiconductor layer;
a second electrode electrically connected to the second conductivity type semiconductor layer;
a first conductive layer disposed under the first electrode and electrically connected thereto;
a second conductive layer disposed below the second electrode and electrically connected thereto;
a first insulating layer disposed between the first conductive layer and the semiconductor structure; and
A connection electrode electrically connected to an adjacent semiconductor structure; includes,
The plurality of semiconductor structures each include a first recess and a second recess penetrating the second conductivity type semiconductor layer and the active layer,
The second recess partitions each of the plurality of semiconductor structures into an active region and an inactive region;
The plurality of semiconductor structures,
a first semiconductor structure; And a second semiconductor structure disposed spaced apart from the first semiconductor structure,
The connection electrode is a semiconductor device electrically connected to a second electrode under the first semiconductor structure and a first electrode under the second semiconductor structure.
According to claim 1,
Each of the plurality of semiconductor structures includes an edge portion,
The edge portion includes a first edge portion disposed to face an adjacent semiconductor structure and a second edge portion extending from the first edge portion,
The second recess includes a first recess portion extending adjacent to the first edge portion and a second recess portion extending adjacent to the second edge portion.
According to claim 2,
The connection electrode partially overlaps the first edge portion in a vertical direction.
According to claim 2,
The first insulating layer further comprises a groove disposed between the plurality of adjacent semiconductor structures,
The groove is concave in a direction from the second conductivity type semiconductor layer toward the first conductivity type semiconductor layer,
The connection electrode partially overlaps the groove in a vertical direction.
According to claim 2,
The connection electrode is partially disposed inside the first recess portion adjacent to the second edge portion from the inside of the adjacent semiconductor structure.
According to claim 1
Further comprising a second insulating layer disposed between the semiconductor structure and the first conductive layer,
The second insulating layer further includes a first through hole disposed under the first electrode and a second through hole disposed under the second conductive layer.
delete According to claim 6,
The connection electrode is disposed in a second through-hole overlapping in a vertical direction with the first semiconductor structure and a first through-hole overlapping in a vertical direction with the first semiconductor structure.
According to claim 6,
The first through hole and the second through hole are disposed inside the second recess of each semiconductor structure.
According to claim 1,
a third insulating layer disposed below the first conductive layer;
A passivation layer disposed between a plurality of adjacent semiconductor structures, on top surfaces of the plurality of semiconductor structures and on side surfaces of the plurality of semiconductor structures; and
The semiconductor device further includes an electrode pad disposed outside the plurality of semiconductor structures and electrically connected to the second conductive layer.

Images