KR102552889B1 - Semiconductor device, semiconductor device package and mathod for manufacturing the same - Google Patents

Abstract

In an embodiment, a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and between the first conductivity type semiconductor layer and the active layer. , or a light emitting structure including an intermediate layer disposed inside the first conductivity type semiconductor layer, wherein the first conductivity type semiconductor layer, the intermediate layer, the active layer, and the second conductivity type semiconductor layer include aluminum, and the Disclosed are a semiconductor device, a semiconductor device package, and a method of manufacturing a semiconductor device including a first intermediate layer having a lower aluminum composition than the first conductive type semiconductor layer.

Description

Semiconductor device, semiconductor device package, and semiconductor device manufacturing method {SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE PACKAGE AND MATHOD FOR MANUFACTURING THE SAME}

The embodiment relates to a semiconductor device, a semiconductor device package, and a method for manufacturing a semiconductor device.

Semiconductor devices including compounds such as GaN and AlGaN have many advantages, such as having a wide and easily adjustable band gap energy, and can be used in various ways such as light emitting devices, light receiving devices, and various diodes.

In particular, light emitting devices such as light emitting diodes or laser diodes using group 3-5 or group 2-6 compound semiconductor materials of semiconductors are developed in thin film growth technology and device materials to produce red, green, Various colors such as blue and ultraviolet can be realized, and white light with high efficiency can be realized by using fluorescent materials or combining colors. , safety, and environmental friendliness.

In addition, when light receiving devices such as photodetectors or solar cells are manufactured using group 3-5 or group 2-6 compound semiconductor materials, photocurrent is generated by absorbing light in various wavelength ranges through the development of device materials. By doing so, it is possible to use light in a wide range of wavelengths from gamma rays to radio wavelengths. In addition, it has the advantages of fast response speed, safety, environmental friendliness, and easy control of element materials, so that it can be easily used in power control or ultra-high frequency circuits or communication modules.

Accordingly, the semiconductor device can replace a transmission module of an optical communication means, a light emitting diode backlight that replaces a Cold Cathode Fluorescence Lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, and can replace a fluorescent lamp or an incandescent bulb. Applications are expanding to white light emitting diode lighting devices, automobile headlights and traffic lights, and sensors that detect gas or fire. In addition, applications of semiconductor devices can be expanded to high-frequency application circuits, other power control devices, and communication modules.

In particular, a light emitting device that emits light in the ultraviolet wavelength region can be used for curing, medical, and sterilization by performing a curing or sterilizing action.

Recently, research on UV light emitting devices has been actively conducted, but there is still a problem in that it is difficult to implement UV light emitting devices in a vertical type, and there is a problem in that crystallinity is lowered in the process of separating a substrate.

The embodiment provides a vertical UV light emitting device.

In addition, a light emitting device having excellent crystallinity is provided.

In addition, a light emitting device having improved light output is provided.

The problem to be solved in the embodiment is not limited thereto, and it will be said that the solution to the problem described below or the purpose or effect that can be grasped from the embodiment is also included.

A semiconductor device according to an embodiment of the present invention includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and the first conductivity type semiconductor layer. A light emitting structure including an intermediate layer disposed between a conductivity type semiconductor layer and the active layer or inside the first conductivity type semiconductor layer, wherein the first conductivity type semiconductor layer, the intermediate layer, the active layer, and the second conductivity type semiconductor The layer includes aluminum, and the intermediate layer includes a first intermediate layer having a lower aluminum composition than that of the first conductivity-type semiconductor layer.

The intermediate layer may include the first intermediate layer and a second intermediate layer having a higher aluminum concentration than the first intermediate layer.

The aluminum composition of the second intermediate layer may be higher than the aluminum composition of the first conductivity type semiconductor layer.

The first intermediate layer and the second intermediate layer may be alternately stacked in plurality.

A thickness of the first intermediate layer may be greater than a thickness of the second intermediate layer.

The thickness ratio of the first intermediate layer and the second intermediate layer may be 2:1 to 6:1.

The total thickness of the intermediate layer may be greater than 50 nm and less than 1000 nm.

The aluminum composition of the first intermediate layer may be 30% to 60%.

The aluminum composition of the second intermediate layer may be 60% to 100%.

The first conductive semiconductor layer includes a 1-1 conductive semiconductor layer and a 1-2 conductive semiconductor layer, and the intermediate layer includes a 1-1 conductive semiconductor layer and a 1-2 conductive semiconductor layer. It can be placed between layers.

The 1-2 conductivity type semiconductor layer may be closer to the active layer than the 1-1 conductivity type semiconductor layer.

The aluminum composition of the 1-2 conductivity type semiconductor layer may be lower than the aluminum composition of the 1-1 conductivity type semiconductor layer.

A thickness of the 1-1 conductivity type semiconductor layer may be greater than a thickness of the 1-2 conductivity type semiconductor layer.

The light emitting structure may include a plurality of recesses penetrating the second conductive semiconductor layer and the active layer and extending to a partial region of the first and second conductive semiconductor layers.

A first conductive layer including a connection electrode disposed inside the plurality of recesses and electrically connected to the first-second conductive type semiconductor layer may be included.

The intermediate layer may be disposed between the first conductive semiconductor layer and the active layer.

The light emitting structure may include a plurality of recesses that pass through the second conductive semiconductor layer, the active layer, and the intermediate layer and extend to a partial region of the first conductive semiconductor layer.

A first conductive layer including a connection electrode disposed inside the plurality of recesses and electrically connected to the first conductive type semiconductor layer may be included.

A semiconductor device package according to an embodiment of the present invention includes a body; and a semiconductor element disposed on the body, wherein the semiconductor element includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. and a light emitting structure including an intermediate layer disposed between the first conductivity type semiconductor layer and the active layer or inside the first conductivity type semiconductor layer, wherein the first conductivity type semiconductor layer, the intermediate layer, the active layer, and The second conductive semiconductor layer may include aluminum, and the intermediate layer may include a first intermediate layer having a lower aluminum composition than the first conductive semiconductor layer.

A semiconductor device manufacturing method according to an embodiment of the present invention includes sequentially forming a light absorbing layer and the light emitting structure according to claim 1 on a substrate; and separating the light absorbing layer and the first conductive type semiconductor layer by irradiating the substrate with a laser beam. In the separating step, the light absorbing layer and the intermediate layer may absorb the laser light.

According to the embodiment, a vertical UV light emitting device may be manufactured.

In addition, the crystallinity of the UV light emitting device can be improved.

In addition, light output can be improved.

Various advantageous advantages and effects of the present invention are not limited to the above description, and will be more easily understood in the process of describing specific embodiments of the present invention.

1 is a conceptual diagram of a light emitting structure according to an embodiment of the present invention;
2 is a conceptual diagram of a light emitting structure according to another embodiment of the present invention;
3 is a conceptual diagram of a semiconductor device according to an embodiment of the present invention;
4 is a conceptual diagram of a semiconductor device according to another embodiment of the present invention;
5A is a conceptual diagram of a semiconductor device according to another embodiment of the present invention;
Figure 5b is a modified example of Figure 5a,
6A and 6B are plan views of a semiconductor device according to an embodiment of the present invention;
7 is a conceptual diagram of a light emitting structure in which a light absorbing layer and an intermediate layer are formed;
8 is a cross-sectional photograph of a light absorption layer having a bulk structure;
9 is a cross-sectional photograph of a light absorption layer having a superlattice structure;
10 is a view for explaining a process of separating a substrate,
11 is a diagram for explaining a process of etching a light emitting structure;
12 is a view showing a manufactured semiconductor device,
13 is a conceptual diagram of a semiconductor device package according to an exemplary embodiment.

The present embodiments may be modified in other forms or combined with each other, and the scope of the present invention is not limited to each of the embodiments described below.

Even if a matter described in a specific embodiment is not described in another embodiment, it may be understood as a description related to another embodiment, unless there is a description contrary to or contradictory to the matter in another embodiment.

For example, if the characteristics of component A are described in a specific embodiment and the characteristics of component B are described in another embodiment, the opposite or contradictory description even if the embodiment in which components A and B are combined is not explicitly described. Unless there is, it should be understood as belonging to the scope of the present invention.

In the description of the embodiment, in the case where an element is described as being formed “on or under” of another element, on or under (on or under) or under) includes both elements formed by directly contacting each other or by indirectly placing one or more other elements between the two elements. In addition, when expressed as "on or under", it may include the meaning of not only the upward direction but also the downward direction based on one element.

Hereinafter, with reference to the accompanying drawings, embodiments of the present invention will be described in detail so that those skilled in the art can easily carry out the present invention.

The light emitting structure according to the embodiment of the present invention can output light in the ultraviolet wavelength range. Illustratively, the light emitting structure may output light (UV-A) in a near-ultraviolet wavelength range, may output light (UV-B) in a far-ultraviolet wavelength range, or emit light (UV-C) in a deep ultraviolet wavelength range. can be printed out. The wavelength range may be determined by the composition ratio of Al of the light emitting structure 120 .

Illustratively, the light (UV-A) in the near ultraviolet wavelength range may have a wavelength ranging from 320 nm to 420 nm, and the light (UV-B) in the far ultraviolet wavelength range may have a wavelength ranging from 280 nm to 320 nm. The light (UV-C) of the wavelength range may have a wavelength ranging from 100 nm to 280 nm.

1 is a conceptual diagram of a light emitting structure according to an embodiment of the present invention.

The light emitting structure 120A according to the embodiment includes a first conductive semiconductor layer 124, a second conductive semiconductor layer 127, an active layer 126, and a first conductive semiconductor layer 124 and an active layer 126. It includes an intermediate layer 125 disposed therebetween.

The first conductivity type semiconductor layer 124, the intermediate layer 125, the active layer 126, and the second conductivity type semiconductor layer 127 include aluminum. The composition of aluminum can be adjusted according to the desired UV wavelength range.

The first conductivity type semiconductor layer 124 may be implemented with a compound semiconductor such as group III-V or group II-VI, and may be doped with a first dopant. The first conductivity-type semiconductor layer 124 is a semiconductor material having a composition formula of Inx1Aly1Ga1-x1-y1N (0≤x1≤1, 0≤y1≤1, 0≤x1+y1≤1), for example, GaN, AlGaN, It may be selected from InGaN, InAlGaN, and the like. Also, the first dopant may be an n-type dopant such as Si, Ge, Sn, Se, or Te. When the first dopant is an n-type dopant, the first conductivity-type semiconductor layer 124 doped with the first dopant may be an n-type semiconductor layer.

The active layer 126 is disposed between the first conductivity type semiconductor layer 124 and the second conductivity type semiconductor layer 127 . The active layer 126 is a layer where electrons (or holes) injected through the first conductive semiconductor layer 124 and holes (or electrons) injected through the second conductive semiconductor layer 127 meet. The active layer 126 transitions to a lower energy level as electrons and holes recombine, and may generate light having an ultraviolet wavelength.

The active layer 126 may have a structure of any one of a single well structure, a multi-well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, or a quantum wire structure, and the active layer 126 The structure of is not limited to this.

The intermediate layer 125 may be disposed between the first conductive semiconductor layer 124 and the active layer 126 . The intermediate layer 125 includes a first intermediate layer 125a having a lower aluminum composition than the first conductive semiconductor layer 124 and a second intermediate layer 125b having a higher aluminum composition than the first conductive semiconductor layer 124 . A plurality of first intermediate layers 125a and second intermediate layers 125b may be alternately disposed.

The aluminum composition of the first intermediate layer 125a may be lower than the aluminum composition of the first conductive semiconductor layer 124 . The first intermediate layer 125a may serve to prevent damage to the active layer 126 by absorbing laser irradiated onto the light emitting structure 120 during the LLO process. Accordingly, in the semiconductor device according to the embodiment, damage to the active layer may be reduced, and light output, electrical characteristics, and reliability may be improved.

The thickness and aluminum composition of the first intermediate layer 125a may be appropriately adjusted to absorb laser having a wavelength of the laser irradiated to the light emitting structure 120 during the LLO process. The aluminum composition of the first intermediate layer 125a may be 30% to 60%, and the thickness may be 1 nm to 10 nm. Illustratively, the first intermediate layer 125a may be AlGaN, but is not necessarily limited thereto.

The aluminum composition of the second intermediate layer 125b may be higher than that of the first conductive semiconductor layer 124 . The second intermediate layer 125b increases the aluminum composition lowered by the first intermediate layer 125a, so that the propagation direction of the lattice defect transmitted from the lower portion of the intermediate layer 125 is changed between the first intermediate layer 125a and the second intermediate layer 125b. can change at the interface of As the plurality of lattice defects are merged with each other at the interface, lattice defects propagating to the upper portion of the intermediate layer 125 may be reduced. Accordingly, lattice defects of the epitaxial layer grown on the intermediate layer 125 may be reduced and crystallinity may be improved. In addition, light extraction efficiency may be improved due to a difference in refractive index due to a difference in Al content from that of the first conductivity type semiconductor layer 124 .

For example, the aluminum composition of the second intermediate layer 125b may be 60% to 100%, and the thickness may be 0.1 nm to 2.0 nm. The second intermediate layer 125b may be AlGaN or AlN.

Illustratively, to absorb a laser having a wavelength of 246 nm, the thickness of the first intermediate layer 125a may be greater than that of the second intermediate layer 125b. The thickness of the first intermediate layer 125a may be 1.0 nm to 10.0 nm, and the thickness of the second intermediate layer 125b may be 0.5 nm to 2.0 nm.

The thickness ratio (first intermediate layer:second intermediate layer) of the first intermediate layer 125a and the second intermediate layer 125b may be 2:1 to 6:1. When the thickness ratio is less than 2: 1, the first intermediate layer 125a becomes thin and it is difficult to sufficiently absorb the laser, and when the thickness ratio is greater than 6: 1, the second intermediate layer 125b becomes too thin and the aluminum composition of the entire intermediate layer is lowered. there is.

The overall thickness of the intermediate layer 125 may be greater than 50 nm and less than 1000 nm. When the thickness is less than 50 nm, the thickness of the first intermediate layer 125a becomes thin, making it difficult to sufficiently absorb the 246 nm laser.

The second conductivity type semiconductor layer 127 is formed on the active layer 126 and may be implemented with compound semiconductors such as group III-V and group II-VI. Dopants may be doped. The second conductivity type semiconductor layer 127 is a semiconductor material having a composition formula of Inx5Aly2Ga1-x5-y2N (0≤x5≤1, 0≤y2≤1, 0≤x5+y2≤1) or AlInN, AlGaAs, GaP, GaAs , GaAsP, may be formed of a material selected from AlGaInP. When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, the second conductivity-type semiconductor layer 127 doped with the second dopant may be a p-type semiconductor layer.

When the second conductive type semiconductor layer 127 is AlGaN, hole injection may not be smooth due to low electrical conductivity. Accordingly, GaN having relatively excellent electrical conductivity and having the same polarity as the second conductivity type semiconductor layer 126 may be disposed on the bottom surface of the second conductivity type semiconductor layer 127 .

2 is a conceptual diagram of a light emitting structure according to another embodiment of the present invention.

The light emitting structure 120B according to the embodiment includes first conductivity type semiconductor layers 124a and 124b, second conductivity type semiconductor layer 127, the first conductivity type semiconductor layers 124a and 124b and the second conductivity type semiconductor. It includes an active layer 126 disposed between the layers 127 and an intermediate layer 125 disposed inside the first conductive type semiconductor layers 124a and 124b.

The first conductivity type semiconductor layers 124a and 124b include a 1-1 conductivity type semiconductor layer 124a and a 1-2 conductivity type semiconductor layer 124b, and the intermediate layer 125 is a 1-1 conductivity type semiconductor layer 124b. It may be disposed between the semiconductor layer 124a and the first-second conductive type semiconductor layer 124b.

The 1-2nd conductivity type semiconductor layer 124b may be disposed closer to the active layer 126 than the 1-1st conductivity type semiconductor layer 124a. The aluminum composition of the 1-2nd conductivity type semiconductor layer 124b may be lower than that of the 1-1st conductivity type semiconductor layer 124a. The aluminum composition of the 1-2th conductivity type semiconductor layer 124b may be 40% to 70%, and the aluminum composition of the 1-1st conductivity type semiconductor layer 124a may be 50% to 80%.

The thickness of the 1-2th conductivity type semiconductor layer 124b may be smaller than that of the 1-1st conductivity type semiconductor layer 124a. The thickness of the 1-1st conductivity type semiconductor layer 124a may be 130% or more of the thickness of the 1-2nd conductivity type semiconductor layer 124b. According to this configuration, since the intermediate layer 125 is formed after the 1-1 conductivity type semiconductor layer 124a having a high aluminum concentration sufficiently grows, the crystallinity of the entire light emitting structure 120 can be improved.

The configuration (aluminum composition, thickness, etc.) of the intermediate layer 125 described in FIG. 1 may be applied as it is. If necessary, the intermediate layer 125 may be doped with a first dopant.

3 is a conceptual diagram of a semiconductor device according to an exemplary embodiment, and FIG. 4 is a conceptual diagram of a semiconductor device according to another exemplary embodiment.

The structure described in FIG. 1 may be applied as it is to the structure of the light emitting structure 120A. Referring to FIG. 3 , the recess 128 may pass through the second conductive semiconductor layer 127 and the active layer 126 and extend to a partial region of the intermediate layer 125 .

The first electrode 142 may be electrically connected to the first conductive semiconductor layer 124 through the intermediate layer 125 . Since the middle layer 125 has a lower composition of aluminum than the first conductive type semiconductor layer 124, it is advantageous for dispersing current. However, it is not necessarily limited thereto, and the recess 128 may pass through the intermediate layer 125 and be disposed in a partial region of the first conductive type semiconductor layer 124 .

The intermediate layer 125 may be doped with n dopant. Accordingly, the intermediate layer 125 may be defined as a region in which the composition of aluminum is low within the first conductivity type semiconductor layer 124 .

The first conductive layer 165 includes a connection electrode 167 disposed in the recess 128 and electrically connected to the first conductive semiconductor layer 124 . A first electrode 142 may be disposed between the connection electrode 167 and the first conductive type semiconductor layer 124 . The first electrode 142 may be an ohmic electrode.

The distance from the upper surface of the first recess 128 to the upper surface of the light emitting structure may be 1 μm to 4 μm. If the upper surface of the light emitting structure and the upper surface of the recess 128 are less than 1um, the reliability of the light emitting device may be reduced, and if it exceeds 4um, light extraction efficiency may be reduced due to crystal defects disposed inside the light emitting structure.

The second conductive layer 150 may be disposed on the lower surface of the second conductive semiconductor layer 127 and electrically connected thereto. The second conductive layer 150 may be disposed in a region between the plurality of connection electrodes 167 . An area of the second conductive layer 150 is exposed and can be electrically connected to the electrode pad. Although not shown, a second electrode (ohmic electrode) may be disposed between the second conductive layer 150 and the second conductive semiconductor layer 127 .

The first conductive layer 165 and the second conductive layer 150 may be formed of transparent conductive oxide (TCO). The transparent conductive oxide film is ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), AZO (Aluminum Zinc Oxide), AGZO (Aluminum Gallium Zinc Oxide), IZTO (Indium Zinc Tin Oxide), IAZO (Indium Aluminum Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IZON (IZO Nitride), ZnO, IrOx, RuOx and NiO.

The first conductive layer 165 and the second conductive layer 150 may include an opaque metal such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, or Hf. In addition, the first conductive layer 165 may be formed of one or a plurality of layers in which a transparent conductive oxide film and an opaque metal are mixed, but is not limited thereto.

The insulating layer 130 may be formed by selecting at least one from the group consisting of SiO ₂ , SixOy, Si ₃ N ₄ , SixNy, SiOxNy, Al ₂ O ₃ , TiO ₂ , AlN, and the like, but is not limited thereto. The insulating layer 130 may electrically insulate the connection electrode 167 from the active layer 126 and the second conductive type semiconductor layer 127 .

4 is a conceptual diagram of a semiconductor device according to another embodiment of the present invention.

The structure described in FIG. 2 may be applied as it is to the structure of the light emitting structure 120B. Referring to FIG. 4 , the first conductive semiconductor layer 124 includes a 1-1 conductive semiconductor layer 124a and a 1-2 conductive semiconductor layer 124 b, and the intermediate layer 125 is It may be disposed between the 1-1 conductivity type semiconductor layer 124a and the 1-2 conductivity type semiconductor layer 124b.

The recess 128 may pass through the second conductive semiconductor layer 127 , the active layer 126 , and the first and second conductive semiconductor layers 124b and extend to a partial region of the intermediate layer 125 . Since the middle layer 125 has a lower composition of aluminum than the first conductive type semiconductor layer 124, it is advantageous for dispersing current.

However, it is not necessarily limited thereto, and the recess 128 may be disposed in a partial region of the 1-2 conductive semiconductor layer 124b.

At this time, the 1-2 conductivity type semiconductor layer 124b is disposed closer to the active layer 126 than the 1-1 conductivity type semiconductor layer 124a, and the aluminum composition and The thickness may be smaller than the aluminum composition and thickness of the 1-1st conductivity type semiconductor layer 124a.

The thickness of the second intermediate layer 125b may be greater than 500 nm and less than 1000 nm. The thickness of the first intermediate layer 125a may be 600 nm to 1500 nm. The thickness of the first intermediate layer 125a may vary according to the depth of the concavo-convex pattern.

The light emitting structure 120 may include a plurality of recesses 128 penetrating the second conductivity type semiconductor layer 127 and the active layer 126 and extending to a partial region of the first and second conductivity type semiconductor layers 124b. can

The first conductive layer 165 includes a connection electrode 167 disposed inside the plurality of recesses 128 and electrically connected to the 1-2 conductive semiconductor layer 124b, and the 1-2 conductive semiconductor layer. A first electrode 142 disposed between 124b and the connection electrode 167 may be included. Since the 1-2 conductive semiconductor layer 124b has a relatively low aluminum content, it may be advantageous for current injection and dispersion. However, it is not necessarily limited thereto, and the 1-1st conductivity type semiconductor layer 124a and the 1-2nd conductivity type semiconductor layer 124b may have the same aluminum composition, and the recess 128 may have the 1-1st conductivity type semiconductor layer 124b. A portion of the conductive semiconductor layer 124a may also be formed.

5A is a conceptual diagram of a semiconductor device according to another embodiment of the present invention, and FIG. 5B is a modified example of FIG. 5A.

The configuration of the light emitting structure 120 described in FIG. 1 may be applied to the light emitting structure 120 of FIG. 5A as it is. The recess 128 may pass through the second conductive semiconductor layer 127 and the active layer 126 and extend to a partial region of the intermediate layer 125 . However, it is not necessarily limited thereto, and the recess 128 may pass through the intermediate layer 125 and be disposed in a partial region of the first conductive type semiconductor layer 124 .

Referring to FIG. 5B , the recess 128 penetrates the second conductivity type semiconductor layer 127, the active layer 126, and the first and second conductivity type semiconductor layers 124b and extends to a partial region of the intermediate layer 125. It can be.

Since the middle layer 125 has a lower composition of aluminum than the first conductive type semiconductor layer 124, it is advantageous for dispersing current. The intermediate layer 125 may be doped with n dopant. However, it is not necessarily limited thereto, and the recess 128 may be disposed in a partial region of the 1-2 conductive semiconductor layer 124b.

The first electrode 142 may be disposed on an upper surface of the recess 128 and electrically connected to the first conductive type semiconductor layer 124 . The second electrode 246 may be formed under the second conductive semiconductor layer 127 .

The first electrode 142 and the second electrode 246 may be ohmic electrodes. The first electrode 142 and the second electrode 246 include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), and indium gallium zinc oxide (IGZO). ), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, or Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, It may be formed including at least one of Ru, Mg, Zn, Pt, Au, and Hf, but is not limited to these materials.

A second electrode pad 166 may be disposed at a corner region of one side of the semiconductor device. The second electrode pad 166 may have a concave portion and a convex portion on an upper surface of the second electrode pad 166 with a depressed central portion. A wire (not shown) may be bonded to the concave portion of the upper surface. Therefore, the bonding area is widened, and the second electrode pad 166 and the wire can be more firmly bonded.

Since the second electrode pad 166 can reflect light, light extraction efficiency can be improved as the second electrode pad 166 is closer to the light emitting structure 120 .

The height of the convex portion of the second electrode pad 166 may be higher than that of the active layer 126 . Therefore, the second electrode pad 166 reflects the light emitted from the active layer 126 in the horizontal direction of the device upward, thereby improving light extraction efficiency and controlling the beam angle.

The first insulating layer 131 may be partially opened under the second electrode pad 166 so that the second conductive layer 150 and the second electrode 246 may be electrically connected. The passivation layer 180 may be formed on top and side surfaces of the light emitting structure 120 . The passivation layer 180 may contact the first insulating layer 131 at a region adjacent to the second electrode 246 or at a lower portion of the second electrode 246 .

A width d22 of a portion where the first insulating layer 131 is opened and the second electrode 246 contacts the second conductive layer 150 may be, for example, 40 μm to 90 μm. If it is smaller than 40 μm, there is a problem in that the operating voltage increases, and if it is larger than 90 μm, it may be difficult to secure a process margin for not exposing the second conductive layer 150 to the outside. If the second conductive layer 150 is exposed outside the second electrode 246, reliability of the device may deteriorate. Therefore, preferably, the width d22 may be 60% to 95% of the total width of the second electrode pad 166 .

The first insulating layer 131 may electrically insulate the first electrode 142 from the active layer 126 and the second conductive semiconductor layer 127 . Also, the first insulating layer 131 may electrically insulate the second electrode 246 and the second conductive layer 150 from the first conductive layer 165 .

The first insulating layer 131 may be formed by selecting at least one from the group consisting of SiO ₂ , SixOy, Si3N4, SixNy, SiOxNy, Al ₂ O ₃ , TiO ₂ , AlN, and the like, but is not limited thereto. The first insulating layer 131 may be formed as a single layer or multiple layers. For example, the first insulating layer 131 may be a multi-layer distributed Bragg reflector (DBR) including silver Si oxide or a Ti compound. However, the first insulating layer 131 is not necessarily limited thereto and may include various reflective structures.

When the first insulating layer 131 performs an insulating function, the light extraction efficiency may be improved by upwardly reflecting light emitted from the active layer 126 toward the side surface. As will be described later, as the number of recesses 128 increases in the UV semiconductor device, light extraction efficiency may be more effective.

The second conductive layer 150 may cover the second electrode 246 . Accordingly, the second electrode pad 166, the second conductive layer 150, and the second electrode 246 may form one electrical channel.

The second conductive layer 150 completely surrounds the second electrode 246 and may come into contact with the side surface and top surface of the first insulating layer 131 . The second conductive layer 150 is made of a material having good adhesion to the first insulating layer 131, and includes at least one material selected from the group consisting of materials such as Cr, Al, Ti, Ni, Au, and the like. It may be made of an alloy of, and may be made of a single layer or a plurality of layers.

When the second conductive layer 150 contacts the side surface and top surface of the first insulating layer 131, the thermal and electrical reliability of the second electrode 246 can be improved. In addition, it may have a reflective function of reflecting light emitted between the first insulating layer 131 and the second electrode 246 upward.

The second conductive layer 150 may also be disposed at the second separation distance between the first insulating layer 131 and the second electrode 246, which is an area where the second conductive semiconductor layer is exposed. The second conductive layer 150 may contact the side surface and top surface of the second electrode 246 and the side surface and top surface of the first insulating layer 131 at the second separation distance.

In addition, a region in which the second conductive layer 150 and the second conductive type semiconductor layer 127 contact each other within the second separation distance to form a Schottky junction may be disposed, and current distribution is facilitated by forming the Schottky junction. it can be done

The second insulating layer 132 electrically insulates the second electrode 246 and the second conductive layer 150 from the first conductive layer 165 . The first conductive layer 165 may be electrically connected to the first electrode 142 through the second insulating layer 132 .

The first conductive layer 165 and the bonding layer 160 may be disposed along the shape of the lower surface of the light emitting structure 120 and the recess 128 . The first conductive layer 165 may be made of a material having excellent reflectivity. For example, the first conductive layer 165 may include aluminum. When the first conductive layer 165 includes aluminum, it serves to reflect light emitted from the active layer 126 upward, thereby improving light extraction efficiency.

The bonding layer 160 may include a conductive material. For example, the bonding layer 160 may include a material selected from the group consisting of gold, tin, indium, aluminum, silicon, silver, nickel, and copper, or an alloy thereof.

The substrate 170 may be made of a conductive material. For example, the substrate 170 may include a metal or semiconductor material. The substrate 170 may be a metal having excellent electrical conductivity and/or thermal conductivity. In this case, the heat generated during operation of the semiconductor device can be quickly dissipated to the outside.

The substrate 170 may include a material selected from the group consisting of silicon, molybdenum, silicon, tungsten, copper, and aluminum, or an alloy thereof.

An upper surface of the light emitting structure 120 may have irregularities. Such irregularities may improve extraction efficiency of light emitted from the light emitting structure 120 . The irregularities may have different average heights depending on the wavelength of the ultraviolet light. In the case of UV-C, the light extraction efficiency may be improved when the irregularities have a height of about 300 nm to about 800 nm and an average height of about 500 nm to about 600 nm.

6A and 6B are plan views of a semiconductor device according to an embodiment of the present invention.

When the Al composition of the light emitting structure 120 increases, current spreading characteristics within the light emitting structure 120 may deteriorate. In addition, the active layer 126 increases the amount of light emitted to the side compared to the GaN-based blue light emitting device (TM mode). This TM mode may occur in an ultraviolet semiconductor device.

According to the embodiment, a relatively large number of recesses 128 may be formed to dispose the first electrode 142 in a GaN semiconductor emitting light in a wavelength band in the ultraviolet region compared to a GaN semiconductor emitting blue light for current diffusion. .

Referring to FIG. 6A , current dissipation characteristics may be deteriorated when the composition of Al is increased. Therefore, the current is distributed only at points adjacent to each first electrode 142, and the current density may rapidly decrease at points far away from each other. Accordingly, the effective light emitting region P2 may be narrowed. The effective light emitting region P2 may be defined as an area up to a boundary point where the current density is 40% or less based on the current density at a point near the first electrode 142 having the highest current density. For example, the effective light emitting region P2 may be adjusted according to the injection current level and the Al concentration in an area within 40 μm from the center of the recess 128 .

In particular, the low current density region P3 between adjacent first electrodes 142 has a low current density and thus hardly contributes to light emission. Therefore, in the embodiment, the light output can be improved by further disposing the first electrode 142 in the low current density region P3 where the current density is low.

In general, since the GaN semiconductor layer has relatively excellent current dissipation characteristics, it is preferable to minimize the area of the recess 128 and the first electrode 142 . This is because the area of the active layer 126 decreases as the area of the recess 128 and the first electrode 142 increases. However, in the case of the embodiment, since the current spreading characteristic is relatively low due to the high concentration of Al, it is preferable to reduce the low current density region P3 by increasing the number of first electrodes 142 even if the area of the active layer 126 is sacrificed. can

Referring to FIG. 6B , when the number of recesses 128 is 48, the recesses 128 may not be arranged in a straight line in the horizontal and vertical directions, but may be arranged in a zigzag pattern. In this case, the area of the low current density region P3 is further narrowed so that most of the active layer can participate in light emission. When the number of recesses 128 is 70 to 110, current is more efficiently distributed, so that operating voltage is lowered and light output can be improved. In a semiconductor device emitting UV-C, if the number of recesses 128 is less than 70, electrical and optical characteristics may deteriorate, and if the number of recesses 128 is greater than 110, electrical characteristics may be improved, but the volume of the light emitting layer decreases, thereby reducing optical characteristics. this may deteriorate.

The first area where the plurality of first electrodes 142 contact the first conductive type semiconductor layer 122 is 7.4% or more and 20% or less, or 10% or more and 20% or less of the maximum cross-sectional area of the light emitting structure 120 in the horizontal direction. can The first area may be the sum of areas in which each of the first electrodes 142 contact the first conductive type semiconductor layer 122 .

When the first area of the plurality of first electrodes 142 is less than 7.4%, light output is reduced because sufficient current spreading characteristics are not obtained, and when it exceeds 20%, the area of the active layer and the second electrode is excessively reduced. As a result, there is a problem in that the operating voltage increases and the light output decreases.

In addition, the total area of the plurality of recesses 128 may be 13% or more and 30% or less of the maximum cross-sectional area of the light emitting structure 120 in the horizontal direction. If the total area of the recess 128 does not satisfy the above condition, it is difficult to control the total area of the first electrode 142 to 7.4% or more and 20% or less. In addition, there is a problem that the operating voltage increases and the light output decreases.

The second area where the second electrode 246 contacts the second conductive type semiconductor layer 126 may be 35% or more and 70% or less of the maximum cross-sectional area of the light emitting structure 120 in the horizontal direction. The second area may be the total area where the second electrode 246 contacts the second conductive type semiconductor layer 126 .

When the second area is less than 35%, the area of the second electrode is excessively small, resulting in an increase in operating voltage and a decrease in hole injection efficiency. When the second area exceeds 70%, the first area cannot be effectively enlarged, resulting in poor electron injection efficiency.

The first area and the second area have an inversely proportional relationship. That is, when the number of recesses is increased to increase the number of first electrodes, the area of the second electrode is reduced. In order to increase light output, the dispersion characteristics of electrons and holes must be balanced. Therefore, it is important to determine an appropriate ratio between the first area and the second area.

The ratio (first area : second area) of the first area where the plurality of first electrodes contact the first conductivity type semiconductor layer and the second area where the second electrode contacts the second conductivity type semiconductor layer is 1:3. to 1:10.

When the area ratio is greater than 1:10, the first area is relatively small, and current dissipation characteristics may deteriorate. In addition, when the area ratio is smaller than 1:3, there is a problem in that the second area is relatively small.

7 is a conceptual diagram of a light emitting structure in which a light absorbing layer and an intermediate layer are formed, FIG. 8 is a cross-sectional photograph of a light absorbing layer having a bulk structure, FIG. 9 is a cross sectional photograph of a light absorbing layer having a superlattice structure, and FIG. A diagram for explaining a process of separating, FIG. 11 is a view for explaining a process of etching a light emitting structure, and FIG. 12 is a view showing a manufactured semiconductor device.

Referring to FIG. 7 , a buffer layer 122, a light absorption layer 123, a 1-1 conductive semiconductor layer 124a, an intermediate layer 125, and a 1-2 conductive semiconductor layer (on a growth substrate 121) 124b), the active layer 126, and the second conductive type semiconductor layer 127 may be sequentially formed.

The light absorption layer 123 includes a first light absorption layer 123a having a low aluminum composition and a second light absorption layer 123b having a high aluminum composition. A plurality of first light absorbing layers 123a and second light absorbing layers 123b may be alternately disposed.

The aluminum composition of the first light absorption layer 123a may be lower than the aluminum composition of the first conductive semiconductor layer 124 . The first light absorbing layer 123a may serve to be separated by absorbing laser during the LLO process. Thus, the growth substrate can be removed.

The thickness and aluminum composition of the first light absorption layer 123a may be appropriately adjusted to absorb a laser having a wavelength of 246 nm. The aluminum composition of the first light absorption layer 123a may be 20% to 50%, and the thickness may be 1 nm to 10 nm. Illustratively, the first light absorption layer 123a may be AlGaN, but is not limited thereto.

The aluminum composition of the second light absorption layer 123b may be higher than that of the first conductive type semiconductor layer 124 . The second light absorbing layer 123b may improve the crystallinity of the first conductive semiconductor layer 124 grown on the light absorbing layer 123 by increasing the aluminum composition lowered by the first light absorbing layer 123a.

For example, the aluminum composition of the second light absorption layer 123b may be 60% to 100%, and the thickness may be 0.1 nm to 2.0 nm. The second light absorption layer 123b may be AlGaN or AlN.

In order to absorb a laser having a wavelength of 246 nm, the thickness of the first light absorption layer 123a may be greater than that of the second light absorption layer 123b. The thickness of the first light absorbing layer 123a may be 1 nm to 10 nm, and the thickness of the second light absorbing layer 123b may be 0.5 nm to 2.0 nm.

The thickness ratio of the first light absorbing layer 123a and the second light absorbing layer 123b may be 2:1 to 6:1. If the thickness ratio is less than 2: 1, the first light absorbing layer 123a becomes thin and it is difficult to sufficiently absorb the laser, and if the thickness ratio is greater than 6: 1, the second light absorbing layer 123b becomes too thin and the total aluminum composition of the light absorbing layer is low. There is a losing problem.

The total thickness of the light absorption layer 123 may be greater than 100 nm and less than 400 nm. When the thickness is less than 100 nm, the thickness of the first light absorption layer 123a becomes thin, making it difficult to sufficiently absorb the 246 nm laser.

According to the embodiment, crystallinity may be improved by forming the light absorption layer 123 having a superlattice structure. With this configuration, the light absorbing layer 123 can function as a buffer layer that alleviates lattice mismatch between the growth substrate 121 and the light emitting structure 120 . Compared to FIG. 8, it can be seen that crystal defects transferred to the surface of the light absorption layer 123 of FIG. 9 are relatively greatly reduced, resulting in better crystallinity.

The intermediate layer 125 may be disposed between the first conductive semiconductor layer and the active layer 126 or inside the first conductive semiconductor layer 124 . The intermediate layer 125 includes a first intermediate layer 125a having a lower aluminum composition than the first conductive semiconductor layer 124 and a second intermediate layer 125b having a higher aluminum composition than the first conductive semiconductor layer 124 .

The aluminum composition of the first intermediate layer 125a may be lower than the aluminum composition of the first conductive semiconductor layer 124 . The first intermediate layer 125a transmits the light absorbing layer 123 during the LLO process and absorbs laser irradiated to the semiconductor layer disposed above the light absorbing layer 123 to prevent damage to the active layer 126. can Accordingly, light output and electrical characteristics may be improved. All of the structures described in FIG. 2 may be applied to the configuration of the intermediate layer 125 .

Referring to FIG. 10 , in the step of removing the growth substrate 121 , the growth substrate 121 may be separated by irradiating a laser L1 from the side of the growth substrate 121 . The laser L1 may have a wavelength band that can be absorbed by the first light absorption layer 123a. For example, the laser may be a KrF laser having a wavelength of 248 nm.

The growth substrate 121 and the second light absorption layer 123b do not absorb the laser L1 because of their large energy band gap. However, the first light absorption layer 123a having a low aluminum composition may be decomposed by absorbing the laser L1. Therefore, it can be separated together with the growth substrate 121 .

In this case, when a portion of the laser is applied to the active layer 126 through the light absorption layer 123, damage may occur to the light emitting structure 120, and thus light output may decrease. Therefore, according to the embodiment, the intermediate layer 125 is disposed between the first conductive semiconductor layer 124 and the active layer 126 to absorb the laser transmitted through the light absorption layer 123 .

At this time, since most of the laser is absorbed by the light absorption layer, there is not enough energy to separate the intermediate layer 125 . Therefore, the intermediate layer 125 may not be separated even when the laser is absorbed. In addition, the thickness of the light absorbing layer 123 or the output of the laser may be adjusted so that the intermediate layer 125 absorbs the laser and is not separated.

Thereafter, the light absorbing layer 123-2 remaining in the first conductive semiconductor layer 124a may be removed by leveling.

Referring to FIG. 11 , after the second conductive layer 150 is formed on the second conductive semiconductor layer 127, a recess penetrating to a part of the first conductive semiconductor layer 124 of the light emitting structure 120 ( 128) may be formed in plurality. After that, the insulating layer 130 may be formed on the side surface of the recess 128 and the second conductive type semiconductor layer 127 . After that, the first electrode 142 may be formed on the first conductive type semiconductor layer 124b exposed by the recess 128 .

Referring to FIG. 12 , the first conductive layer 165 may be formed under the insulating layer 130 . The first conductive layer 165 may be electrically insulated from the second conductive layer 150 by the insulating layer 130 .

Thereafter, the conductive substrate 170 may be formed under the first conductive layer 165, and the second electrode pad 166 may be formed on the second conductive layer 150 exposed by mesa etching.

The semiconductor device is configured as a package and may be used for curing of resin, resist, SOD, or SOG. Alternatively, the semiconductor device may be used for medical treatment or for sterilization of air purifiers or water purifiers.

Referring to FIG. 13 , the semiconductor device package includes a body 2 having a groove 2a, a semiconductor device 1 disposed in the body 2, and a semiconductor device 1 disposed in the body 2 electrically. A pair of connected lead frames 3 and 4 may be included.

The body 2 may include a material or coating layer that reflects ultraviolet light. In addition, the mold member 5 covering the semiconductor device 1 may include a material that transmits ultraviolet light.

The semiconductor device may be used as a light source of a lighting system, or may be used as a light source of an image display device or a light source of a lighting device. That is, the semiconductor element may be applied to various electronic devices disposed in a case to provide light. Illustratively, when a semiconductor device and an RGB phosphor are mixed and used, white light having excellent color rendering index (CRI) can be implemented.

The semiconductor device described above is configured as a light emitting device package and can be used as a light source of a lighting system, for example, a light source of an image display device or a light source of a lighting device.

When used as a backlight unit of an image display device, it can be used as an edge-type backlight unit or a direct-type backlight unit, and when used as a light source for a lighting device, it can be used as a lamp or bulb type, and can also be used as a light source for mobile terminals. may be

The light emitting element includes a laser diode in addition to the light emitting diode described above.

Like the light emitting device, the laser diode may include the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer having the above structure. In addition, an electro-luminescence phenomenon in which light is emitted when a current is passed after bonding a p-type first conductivity type semiconductor and an n-type second conductivity type semiconductor is used, but the directionality of the emitted light There is a difference between and phase. That is, a laser diode can emit light having a specific wavelength (monochromatic beam) with the same phase and in the same direction by using a phenomenon called stimulated emission and a constructive interference phenomenon. Due to this, it can be used for optical communication, medical equipment, and semiconductor processing equipment.

A photodetector, which is a type of transducer that detects light and converts its intensity into an electrical signal, may be exemplified as the light receiving element. As such an optical detector, a photovoltaic cell (silicon, selenium), an optical output device (cadmium sulfide, cadmium selenide), a photodiode (eg, a PD having a peak wavelength in a visible blind spectral region or a true blind spectral region), a photodetector Transistors, photomultiplier tubes, photoelectric tubes (vacuum, gas filled), IR (Infra-Red) detectors, etc., but embodiments are not limited thereto.

In addition, a semiconductor device such as a photodetector may be fabricated using a direct bandgap semiconductor having excellent light conversion efficiency. Alternatively, photodetectors have various structures, and the most common structures include a pin type photodetector using a p-n junction, a Schottky type photodetector using a Schottky junction, and a Metal Semiconductor Metal (MSM) type photodetector. there is.

Like a light emitting device, a photodiode may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer having the above-described structure, and has a pn junction or pin structure. The photodiode operates by applying a reverse bias or zero bias, and when light is incident on the photodiode, electrons and holes are generated and current flows. In this case, the size of the current may be substantially proportional to the intensity of light incident on the photodiode.

A photovoltaic cell or solar cell is a type of photodiode and can convert light into electric current. A solar cell, like a light emitting device, may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer having the above structure.

In addition, it can be used as a rectifier of an electronic circuit through the rectification characteristics of a general diode using a p-n junction, and can be applied to an oscillation circuit by being applied to a microwave circuit.

In addition, the above-described semiconductor device is not necessarily implemented as a semiconductor and may further include a metal material in some cases. For example, a semiconductor device such as a light receiving device may be implemented using at least one of Ag, Al, Au, In, Ga, N, Zn, Se, P, or As, and may be implemented using a p-type or n-type dopant. It may be implemented using a doped semiconductor material or an intrinsic semiconductor material.

Although the above has been described with reference to the embodiments, this is only an example and does not limit the present invention, and those skilled in the art to which the present invention belongs will not deviate from the essential characteristics of the present embodiment. It will be appreciated that various variations and applications are possible. For example, each component specifically shown in the embodiment can be modified and implemented. And differences related to these modifications and applications should be construed as being included in the scope of the present invention as defined in the appended claims.

120: light emitting structure
121: growth substrate
123: light absorption layer
123a: first light absorption layer
123b: second light absorption layer
124: first conductivity type semiconductor layer
125: middle layer
125a: first intermediate layer
125b: second intermediate layer
126: active layer
127: second conductivity type semiconductor layer

Claims (20)

a first conductive semiconductor layer;
a second conductive semiconductor layer;
An active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and
A light emitting structure including an intermediate layer disposed between the first conductivity type semiconductor layer and the active layer or inside the first conductivity type semiconductor layer,
The first conductive semiconductor layer, the intermediate layer, the active layer, and the second conductive semiconductor layer include aluminum,
The intermediate layer includes a first intermediate layer and a second intermediate layer,
The first intermediate layer and the second intermediate layer include aluminum,
The aluminum composition of the first intermediate layer is lower than the aluminum composition of the first conductivity type semiconductor layer,
The aluminum composition of the first intermediate layer is lower than the aluminum composition of the second intermediate layer semiconductor device.
delete According to claim 1,
The aluminum composition of the second intermediate layer is higher than the aluminum composition of the first conductivity-type semiconductor layer.
According to claim 1,
A semiconductor device in which a plurality of first intermediate layers and second intermediate layers are alternately stacked.
According to claim 1,
The thickness of the first intermediate layer is thicker than the thickness of the second intermediate layer semiconductor device.
According to claim 5,
The thickness ratio of the first intermediate layer and the second intermediate layer is 2: 1 to 6: 1 semiconductor device.
According to claim 1,
A semiconductor device in which the total thickness of the intermediate layer is greater than 50 nm and less than 1000 nm.
According to claim 1,
The aluminum composition of the first intermediate layer is a semiconductor device of 30% to 60%.
According to claim 8,
The aluminum composition of the second intermediate layer is a semiconductor device of 60% to 100%.
According to claim 1,
The first conductive semiconductor layer includes a 1-1 conductive semiconductor layer and a 1-2 conductive semiconductor layer,
The intermediate layer is disposed between a 1-1st conductivity type semiconductor layer and a 1-2th conductivity type semiconductor layer.
According to claim 10,
The 1-2 conductivity type semiconductor layer is closer to the active layer than the 1-1 conductivity type semiconductor layer.
According to claim 11,
The aluminum composition of the 1-2 conductivity type semiconductor layer is lower than the aluminum composition of the 1-1 conductivity type semiconductor layer.
According to claim 11,
The thickness of the 1-1 conductivity type semiconductor layer is thicker than the thickness of the 1-2 conductivity type semiconductor layer.
According to claim 12,
The light emitting structure includes a plurality of recesses penetrating the second conductive semiconductor layer, the active layer, and the 1-2 conductive semiconductor layers to a partial region of the intermediate layer.
According to claim 14,
A semiconductor device comprising a first conductive layer including a connection electrode disposed inside the plurality of recesses and electrically connected to the first conductive type semiconductor layer.
According to claim 1,
The intermediate layer is a semiconductor device disposed between the first conductive semiconductor layer and the active layer.
According to claim 16,
The light emitting structure includes a plurality of recesses penetrating the second conductive semiconductor layer and the active layer and extending to a partial region of the intermediate layer.
According to claim 17,
A semiconductor device comprising a first conductive layer including a connection electrode disposed inside the plurality of recesses and electrically connected to the intermediate layer.
body; and
Including a semiconductor device disposed on the body,
The semiconductor device,
a first conductive semiconductor layer;
a second conductive semiconductor layer;
An active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and
A light emitting structure including an intermediate layer disposed between the first conductivity type semiconductor layer and the active layer or inside the first conductivity type semiconductor layer,
The first conductive semiconductor layer, the intermediate layer, the active layer, and the second conductive semiconductor layer include aluminum,
The intermediate layer includes a first intermediate layer and a second intermediate layer,
The first intermediate layer and the second intermediate layer include aluminum,
The aluminum composition of the first intermediate layer is lower than the aluminum composition of the first conductivity type semiconductor layer,
The aluminum composition of the first intermediate layer is lower than the aluminum composition of the second intermediate layer semiconductor device package.
sequentially forming a light absorbing layer and the light emitting structure according to claim 1 on a substrate; and
and irradiating a laser to the substrate to separate the light absorption layer and the first conductive type semiconductor layer,
In the separation step,
The light absorbing layer and the intermediate layer absorb the laser.

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