KR20200086488A - Light emitting device - Google Patents

Abstract

Disclosed is a light emitting device that prevents the deterioration of an outer area of a light emitting structure. According to an embodiment of the present invention, the light emitting device comprises: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a plurality of recesses passing through the second conductive semiconductor layer and the active layer to be disposed up to a partial area of the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein an outermost part of the second electrode includes a concave part concave toward the inside of the light emitting structure, and the concave part is disposed between the plurality of recesses.

Description

Light emitting element {LIGHT EMITTING DEVICE}

The embodiment relates to a light emitting device.

Semiconductor devices including compounds such as GaN and AlGaN have many advantages such as having a wide and easy to adjust band gap energy and can be used in various ways as light emitting devices, light receiving devices, and various diodes.

Particularly, light emitting devices such as light emitting diodes or laser diodes using semiconductor group 3 or 2-6 compound semiconductor materials of semiconductors are red, green, and green due to the development of thin film growth technology and device materials. Various colors such as blue and ultraviolet light can be realized, and white light with high efficiency can be realized by using fluorescent materials or combining colors. Compared to existing light sources such as fluorescent and incandescent lamps, low power consumption, semi-permanent life, and quick response It has the advantages of speed, safety and environmental friendliness.

In addition, when a light-receiving device such as a photodetector or a solar cell is manufactured using a semiconductor group III- or 2-6 compound semiconductor material of semiconductors, the development of device materials absorbs light in various wavelength regions to generate a photocurrent. By doing so, it is possible to use light in various wavelength ranges from gamma rays to radio wavelength ranges. In addition, it has the advantages of fast response speed, safety, environmental friendliness, and easy adjustment of device materials, and thus can be easily used in power control or microwave circuits or communication modules.

Therefore, the semiconductor device can replace a light emitting diode backlight, a fluorescent lamp or an incandescent light bulb that replaces a cold cathode tube (CCFL) constituting a backlight of a transmission module of an optical communication means and a liquid crystal display (LCD) display device. Applications are expanding to white light emitting diode lighting devices, automobile headlights and traffic lights, and sensors that detect gas or fire. In addition, the application of the semiconductor device can be expanded to high-frequency application circuits, other power control devices, and communication modules.

In particular, the light emitting device that emits light in the ultraviolet wavelength range can be used for curing, medical, and sterilization by curing or sterilizing.

Recently, research on ultraviolet light emitting devices has been actively conducted, but the ultraviolet light emitting devices have a problem that is difficult to implement in a vertical type, and in the case of a vertical type structure, an outer region is deteriorated and light efficiency is reduced.

In addition, there is a problem that the light output is lowered due to oxidization to peeling and moisture.

The embodiment may provide a light emitting device in which the outer region of the light emitting structure is improved in degradation.

Further, it is possible to provide a light emitting device with improved light output.

Further, it is possible to provide a light emitting device with improved light uniformity.

In addition, it is possible to provide a light emitting device with improved peeling problem during the LLO process.

The problem to be solved in the embodiment is not limited to this, and it will be said that the object or effect that can be grasped from the solution means or the embodiment of the problem described below is also included.

The light emitting device according to an aspect of the present invention includes a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, A light emitting structure including a second conductive type semiconductor layer and a plurality of recesses penetrating through the active layer and extending to a partial region of the first conductive type semiconductor layer; And a second electrode electrically connected to the second conductivity type semiconductor layer, the outermost portion of the second electrode including a concave concave toward the inside of the light emitting structure, and the concave portion between the plurality of recesses Is placed on.

According to the embodiment, it is possible to prevent the outer region of the light emitting structure from being deteriorated.

Further, the light output can be improved.

Further, light uniformity can be improved.

In addition, the light emitting device with improved reliability can be manufactured by blocking the light emitting area of the light emitting device from external moisture or other contaminants.

Various and beneficial advantages and effects of the present invention are not limited to the above, and will be more easily understood in the course of describing specific embodiments of the present invention.

1 is a cross-sectional view of a light emitting device according to a first embodiment of the present invention,
2 is a plan view of a light emitting device according to a first embodiment of the present invention,
3 is a plan view of the first insulating layer,
4 is a plan view of the second electrode,
5 is an enlarged view of part A of FIG. 1,
6 is a plan view of a light emitting device according to a second embodiment of the present invention,
7 is a cross-sectional view of a light emitting device according to a second embodiment of the present invention,
8 is a plan view of the first insulating layer,
9 is an enlarged view of part B of FIG. 7,
10 is an enlarged view of part C of FIG. 7;
11 is a plan view of a light emitting device according to a third embodiment of the present invention,
12 is a cross-sectional view taken along line BB in FIG. 11,
13 is a partially enlarged view of FIG. 12,
14 is a cross-sectional view of a light emitting device according to a fourth embodiment of the present invention,
15 is a plan view of a light emitting device according to a fifth embodiment of the present invention,
16 is a cross-sectional view of a light emitting device according to a sixth embodiment of the present invention,
17 is a plan view showing an electrode structure according to a sixth embodiment of the present invention,
18 is a partially enlarged view of FIG. 17,
19 is a modification of FIG. 18,
20 is a conceptual diagram of a light emitting device package according to an embodiment of the present invention,
21 is a plan view of a light emitting device package according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

However, the technical spirit of the present invention is not limited to some embodiments described, but may be implemented in various different forms, and within the technical spirit of the present invention, one or more of its components between embodiments may be selectively selected. It can be used by bonding and substitution.

In addition, the terms used in the embodiments of the present invention (including technical and scientific terms), unless specifically defined and described, can be generally understood by those skilled in the art to which the present invention pertains. It can be interpreted as meaning, and commonly used terms, such as predefined terms, may interpret the meaning in consideration of the contextual meaning of the related technology.

In addition, the terms used in the embodiments of the present invention are for describing the embodiments and are not intended to limit the present invention.

In the present specification, a singular form may also include a plural form unless specifically stated in the phrase, and is combined with A, B, and C when described as "at least one (or more than one) of A and B, C". It can contain one or more of all possible combinations.

In addition, in describing components of the embodiments of the present invention, terms such as first, second, A, B, (a), and (b) may be used.

These terms are only for distinguishing the component from other components, and the term is not limited to the nature, order, or order of the component.

And, when a component is described as being'connected','coupled' or'connected' to another component, the component is not only directly connected, coupled or connected to the other component, but also to the component It may also include the case of'connected','coupled' or'connected' due to another component between the other components.

Further, when described as being formed or disposed in the "top (top) or bottom (bottom)" of each component, the top (top) or bottom (bottom) is not only when the two components are in direct contact with each other, Also included is the case where one or more other components are formed or disposed between the two components. In addition, when expressed as "up (up) or down (down)", it may include the meaning of the downward direction as well as the upward direction based on one component.

The light emitting structure according to an embodiment of the present invention may output light in an ultraviolet wavelength band. Illustratively, the light emitting structure may output light (UV-A) in the near ultraviolet wavelength range, may output light (UV-B) in the far ultraviolet wavelength range, and may output light (UV-C) in the deep ultraviolet wavelength range. Can print The wavelength range can be determined by the composition ratio of Al in the light emitting structure. In addition, the light emitting structure can output light of various wavelengths having different light intensities, and the peak wavelength of light having the strongest intensity relative to the intensity of other wavelengths among the wavelengths of the light that emits light is near ultraviolet, far ultraviolet, or deep. It can be ultraviolet.

For example, light (UV-A) in the near ultraviolet wavelength band may have a main peak in the range from 320 nm to 420 nm, and light (UV-B) in the far ultraviolet wavelength band may have a main peak in the range from 280 nm to 320 nm, The light (UV-C) in the deep ultraviolet wavelength band may have a main peak in a range of 100 nm to 280 nm. The light emitting structure may generate ultraviolet light having a maximum peak wavelength at a wavelength of 100 nm to 420 nm.

1 is a cross-sectional view of a light emitting device according to a first embodiment of the present invention, FIG. 2 is a plan view of a light emitting device according to a first embodiment of the present invention, FIG. 3 is a plan view of a first insulating layer, and FIG. 4 is It is a top view of the second electrode, and FIG. 5 is an enlarged view of a portion A of FIG. 1.

Referring to FIG. 1, a light emitting device according to an embodiment includes a light emitting structure including a conductive substrate 170, a first conductivity type semiconductor layer 124, a second conductivity type semiconductor layer 127, and an active layer 126 ( 120 ), a first electrode 142 electrically connected to the first conductivity-type semiconductor layer 124, and a second electrode 146 electrically connected to the second conductivity-type semiconductor layer 127.

The first conductivity-type semiconductor layer 124 may be formed of a compound semiconductor such as a III-V group or a II-VI group, and the first dopant may be doped. The first conductivity type semiconductor layer 124 is a semiconductor material having a composition formula of In _x1 Al _y1 Ga _{1 -x1 -y1} N (0≤x1≤1, 0≤y1≤1, 0≤x1+y1≤1), for example For example, it may be selected from AlGaN, InGaN, InAlGaN, and the like. Further, the first dopant may be an n-type dopant such as Si, Ge, Sn, Se, or Te. When the first dopant is an n-type dopant, the first conductive semiconductor layer 124 doped with the first dopant may be an n-type semiconductor layer.

The active layer 126 may be disposed between the first conductivity type semiconductor layer 124 and the second conductivity type semiconductor layer 127. The active layer 126 may be a layer in which electrons (or holes) injected through the first conductivity type semiconductor layer 124 and holes (or electrons) injected through the second conductivity type semiconductor layer 127 are recombined.

The active layer 126 may generate light having a wavelength corresponding to the bandgap energy of the well layer to be described later included in the active layer 126, as the electrons and holes recombine, and the electrons transition to a low energy level. The wavelength of light having a relatively greatest intensity among the wavelengths of light emitted by the light emitting device may be ultraviolet rays, and the ultraviolet rays may be the above-mentioned near ultraviolet rays, far ultraviolet rays, or deep ultraviolet rays.

The active layer 126 may have any of a single well structure, a multi well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, or a quantum wire structure, and the active layer 126 The structure of is not limited to this.

The second conductivity-type semiconductor layer 127 is formed on the active layer 126, and may be formed of a compound semiconductor such as a III-V group or a II-VI group, and is second to the second conductivity-type semiconductor layer 127. The dopant can be doped. The second conductive semiconductor layer 127 is a semiconductor material or AlGaN having a composition formula of In _x5 Al _y2 Ga _{1 -x5- y2} N (0≤x5≤1, 0≤y2≤1, 0≤x5+y2≤1) , AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP. When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, Ba, etc., the second conductivity-type semiconductor layer 127 doped with the second dopant may be a p-type semiconductor layer.

An electron blocking layer (not shown) may be disposed between the active layer 126 and the second conductivity-type semiconductor layer 127. The electron blocking layer (not shown) does not emit electrons supplied from the first conductivity type semiconductor layer 124 to the active layer 126 by recombination in the active layer 126, and the second conductivity type semiconductor layer 127 ) To block the flow out, thereby increasing the probability of recombination of electrons and holes in the active layer 126. The energy band gap of the electron blocking layer (not shown) may be larger than the energy band gap of the active layer 126 and/or the second conductivity type semiconductor layer 127.

The first conductivity type semiconductor layer 124, the active layer 126, and the second conductivity type semiconductor layer 127 may all include aluminum (Al). Therefore, the compositions of the first conductivity type semiconductor layer 124, the active layer 126, and the second conductivity type semiconductor layer 127 may all be AlGaN. However, the composition of the semiconductor layer is not necessarily limited thereto, and may be appropriately adjusted according to the output wavelength.

The light emitting structure 120 may include a first recess 128 that penetrates through the second conductivity type semiconductor layer 127 and the active layer 126 and is disposed to a partial region of the first conductivity type semiconductor layer 124. .

The first electrode 142 is disposed inside the first recess 128 and can be electrically connected to the first conductive semiconductor layer 124. In addition, the second electrode 146 may be disposed on the bottom surface of the second conductivity-type semiconductor layer 127 to be electrically connected.

The first electrode 142 and the second electrode 146 may be ohmic electrodes. The first electrode 142 and the second electrode 146 are indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZAO), indium gallium zinc oxide (IGZO) ), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, or Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, It may be formed of at least one of Ru, Mg, Zn, Pt, Au, Hf, but is not limited to these materials. For example, the first electrode 142 may have a plurality of metal layers (eg, Cr/Al/Ni), and the second electrode 146 may be ITO.

The first insulating layer 131 is disposed in the first recess 128 to electrically insulate the first electrode 142 from the active layer 126 and the second conductivity-type semiconductor layer 127. In addition, the first insulating layer 131 may be disposed on the edge of the lower surface of the light emitting structure 120. In this case, the first insulating layer 131 may extend outside the light emitting structure 120.

The first insulating layer 131 may be formed by at least one selected from the group consisting of SiO ₂ , SixOy, Si ₃ N ₄ , SixNy, SiOxNy, Al ₂ O ₃ , TiO ₂ , AlN, etc., but is not limited thereto. . The first insulating layer 131 may be formed as a single layer or multiple layers. For example, the first insulating layer 131 may be a distributed Bragg reflector (DBR) having a multi-layer structure including Si oxide or a Ti compound. However, the present invention is not limited thereto, and the first insulating layer 131 may include various reflective structures.

In general, in the case of a GaN semiconductor layer, it is preferable to minimize the areas of the recess 128 and the first electrode 142 because of the relatively excellent current dissipation characteristics. This is because the area of the active layer 126 decreases as the area of the recess 128 and the first electrode 142 increases.

However, in the case of the embodiment, the active layer 126 must include aluminum (Al) for ultraviolet light emission, and the first conductivity type semiconductor layer 124 and the second conductivity type semiconductor layer 127 are also high in order to secure crystallinity. It is necessary to include aluminum (Al) of the composition.

As a result, there is a problem that the aluminum (Al) composition of the first and second conductivity type semiconductor layers 126 and 127 is increased, the resistance is increased, and the current dispersion characteristics are lowered. Therefore, it may be desirable to increase the number of first electrodes 142 even at the expense of the area of the active layer 126.

Referring to FIG. 2, the first recesses 128 according to an embodiment may be disposed to be offset from each other to increase the number of the first electrodes 142. That is, the plurality of first recesses 128 may be arranged staggered in a zigzag shape without being disposed on the same line in the horizontal direction (X-axis direction) with the first recesses surrounding them. Such a structure can narrow the distance between the first recesses 128, thereby increasing the number of the first electrodes 142.

The plurality of first recesses 128 includes a plurality of inner recesses 128a having the number N of the nearest recesses 128 and a plurality of outer recesses having a number of the adjacent recesses 128 of less than N. (128b). The outer recess 128b may be a recess closest to the side surfaces 120-1, 120-2, 120-3, 120-4, and 120-5 of the light emitting structure 120. Here, N may be an integer.

Illustratively, the plurality of inner recesses 128a may be surrounded by the six nearest recesses. That is, the distance between the six recesses constituting the vertex of the hexagon 403 and the inner recess 128a disposed in the hexagon 403 may be the same. However, the present invention is not limited thereto, and the inner recess 128a may be a structure surrounded by the 5 or 8 nearest recesses (eg, pentagonal or octagonal).

The outer recess 128b may have the number of the nearest recesses less than N. For example, when the number of closest recesses surrounding the inner recess 128a is 6, the outer recess 128b may be surrounded by 2 to 5 recesses. For example, the outer recess 128b may be surrounded by two recesses or four recesses.

The light emitting structure 120 includes first and second sides 120-1 and 120-3 facing each other, second side 120-2 and fourth sides 120-4 facing each other, and an electrode. It may include a fifth side (120-5) facing the pad (166). The fifth side surface 120-5 may have a curvature along the shape of the electrode pad 166.

The outer recess 128b is a recess disposed at the closest position along the first to fifth sides 120-1, 120-2, 120-3, 120-4, 120-5 of the light emitting structure 120 It can be defined as That is, the outer recess 128b may be a set of recesses disposed at the outermost of the plurality of recesses. Accordingly, all of the inner recess 128a may be included in the virtual line BL1 connecting the center of the outer recess 128b.

Since the recess can not be disposed between the outer recess 128b and the first to fifth sides 120-1, 120-2, 120-3, 120-4, 120-5 of the light emitting structure 120, the outer side The number of recesses surrounding the recess 128b may be less than the number of recesses surrounding the inner recess 128a.

The outer recess 128b has a first outer recess 128b-1 that is relatively close to the first side 120-1 and the third side 120-3 of the light emitting structure 120 and the first side of the light emitting structure. It may include a second outer recess 128b-2 that is relatively far from the side 120-1 and the third side 120-3. At this time, the current is not well distributed between the second outer recess 128b-2 and the side surfaces 120-1 and 120-3 of the light emitting structure, so that the low emission region 401 may be formed. In addition, a low emission region 401 may be formed between the fifth side surface 120-5 facing the electrode pad 166 and the outer recess 128b.

The low emission region 401 can be deteriorated relatively easily. As a result, leakage current may be generated in the low emission region 401, and the low current characteristics may be deteriorated. Therefore, it is necessary to suppress that the low light emitting region 401 is deteriorated or that leakage current is generated.

2 and 3, the first insulating layer 131 is an edge portion 131c disposed at the edge and an extension portion 131d convexly disposed between the outer recess 128b at the edge portion 131c. Can have According to this configuration, it is possible to improve the phenomenon that the low emission region 401 deteriorates.

The extension portion 131d of the first insulating layer 131 includes a first extension portion 131d disposed on the first side surface 120-1 and the third side surface 120-3 of the light emitting structure and a fifth portion of the light emitting structure. It may include a second extension (131d) disposed on the side (120-5).

The area of the second extension portion 131d disposed adjacent to the fifth side surface 120-5 may be larger than the area of the first extension portion 131d disposed adjacent to the first side surface 120-1. That is, the area of the region that does not emit light around the electrode pad 166 may be larger. However, the area of the first extension portion 131d and the second extension portion 131d may vary according to the size and number of the first recesses 128, but not necessarily.

An extension may not be disposed in the first insulating layer 131 disposed on the second side 120-2 and the fourth side 120-4. The outer recesses 128b disposed on the first side 120-1 and the third side 120-3 are arranged in a zigzag direction in the horizontal direction (X-axis direction), while the second side 120-2. This is because the outer recesses 128b disposed on the fourth side surfaces 120-4 are arranged at regular intervals in the vertical direction (Y-axis direction). However, if necessary, extensions may be arranged on the second side 120-2 and the fourth side 120-4.

Referring to FIG. 4, the second electrode 146 may include a plurality of concave portions 146a that are concavely disposed between the first outer recesses 128b-1 adjacent to the side. That is, the concave portion 146a of the second electrode 146 and the extension portion 131d of the first insulating layer 131 may be disposed in a region between adjacent first outer recesses 128b.

The concave portion 146a has a shape corresponding to the extension portion 131d of the first insulating layer 131 and may be spaced apart at predetermined intervals. Therefore, the plurality of extension portions 131d and the plurality of concave portions 146a may not overlap in the vertical direction of the chip.

The concave portion 146a and the extended portion 131d are shown as being semi-circular, but the shapes of the concave portion 146a and the extended portion 131d are not necessarily limited thereto. The extension 131d may have various shapes to cover an area of a region having a relatively small current density. In addition, the concave portion 146a may also have a shape corresponding to the shape of the extension portion 131d. For example, the extension portion 131d and the concave portion 146a may have a triangular or square shape.

Referring to FIG. 5, an extension portion 131d of the first insulating layer 131 may extend inside the light emitting structure 120. Therefore, a low current characteristic may be improved by blocking a leakage current on the side surface of the light emitting structure 120. Therefore, it is possible to improve the phenomenon that the side surfaces of the light emitting structure are deteriorated or burnt.

The first conductive layer 165 may include a plurality of protruding electrodes 165a that penetrate through the first recess 128 and the second insulating layer 132 and are electrically connected to the plurality of first electrodes 142. have. Accordingly, the first conductive layer 165 and the plurality of first electrodes 142 may be defined as first channel electrodes.

The first conductive layer 165 may be made of a material having excellent reflectance. For example, the first conductive layer 165 may include metals such as Ti, Ni, and Al. For example, when the first conductive layer 165 includes aluminum, ultraviolet light emitted from the active layer 126 may be reflected upward.

The second conductive layer 150 may be electrically connected to the second electrode 146 and the electrode pad 166. Accordingly, the electrode pad 166, the second conductive layer 150, and the second electrode 146 may form one electrical channel. Accordingly, the second electrode 146 and the second conductive layer 150 may be defined as second channel electrodes. In this case, a cover layer 143 may be disposed between the second electrode 146 and the second conductive layer 150. The cover layer 143 may prevent the second conductive layer 150 from being oxidized by the second electrode 146. For example, the cover layer 143 may include Ni, Au, Ti, etc., but is not limited thereto.

The second conductive layer 150 includes a lower portion of the second electrode 146, a lower portion of the first insulating layer 131, a lower portion of the second recess 128, a lower portion of the light emitting structure 120, and an electrode pad 166. ).

The second conductive layer 150 is made of a material having good adhesion to the first insulating layer 131, and is made of at least one material selected from the group consisting of materials such as Cr, Ti, Ni, Au, and alloys thereof. It may be made of a single layer or a plurality of layers.

The second conductive layer 150 may be disposed between the first insulating layer 131 and the second insulating layer 132. Accordingly, the second conductive layer 150 may be protected by the first insulating layer 131 and the second insulating layer 132 from penetration of external moisture or contaminants. In addition, the second conductive layer 150 is disposed inside the light emitting element, and ends may be wrapped by the first insulating layer 131 and the second insulating layer 132 so as not to be exposed from the outermost side of the light emitting element. .

The second conductive layer 150 may extend outside the light emitting structure 120. That is, the second conductive layer 150 may extend outside the light emitting structure 120. According to this configuration, the flatness of the second conductive layer 150 can be further improved.

The second insulating layer 132 may electrically insulate the first conductive layer 165 from the second conductive layer 150. The first insulating layer 131 and the second insulating layer 132 may be made of the same material as each other, or may be made of different materials.

The second insulating layer 132 may extend into the first recess 128. However, since the second recess 128 is covered by the first insulating layer 131, the second insulating layer 132 may not be disposed inside the second recess 128. Therefore, the first insulating layer 131 is disposed inside the first recess 128 and the second recess 128, while the second insulating layer 132 is inside the first recess 128. Can only be placed.

The bonding layer 160 may be disposed along the shape of the lower surface of the light emitting structure 120 and the first recess 128. The bonding layer 160 may include a conductive material. For example, the bonding layer 160 may include a material selected from the group consisting of gold, tin, indium, aluminum, silicon, silver, nickel, and copper, or alloys thereof.

The conductive substrate 170 may include a metal or semiconductor material. The conductive substrate 170 may be a metal having excellent electrical conductivity and/or thermal conductivity. In this case, heat generated during operation of the light emitting device can be quickly discharged to the outside. In addition, the first electrode 142 may be supplied with a current from the outside through the conductive substrate 170.

The conductive substrate 170 may include a material selected from the group consisting of silicon, molybdenum, silicon, tungsten, copper, and aluminum or alloys thereof.

6 is a plan view of a light emitting device according to a second embodiment of the present invention, FIG. 7 is a cross-sectional view of a light emitting device according to a second embodiment of the present invention, FIG. 8 is a plan view of a first insulating layer, and FIG. 9 is 7 is an enlarged view of part B, and FIG. 10 is an enlarged view of part C of FIG. 7.

6 to 8, a configuration in which the first insulating layer 131 includes an edge portion 131c and an extension portion 131d extending inward from the edge portion 131c may be applied as it is. Therefore, by covering the low emission region between the side surface of the light emitting structure 120 and the first recess 128, it is possible to prevent deterioration and block leakage current.

In addition, the light emitting device according to the embodiment may further include a second recess 129 surrounding the plurality of first recesses 128. The second recess 129 may continuously extend along the side surface of the light emitting structure 120. The second recess 129 may be a single recess extending along the side surface of the light emitting structure 120 to form a closed loop, but is not limited thereto, and may be divided into a plurality of recesses.

The active layer 126 by the second recess 129 is an inactive region OA1 disposed outside the second recess 129 and an active region IA1 disposed inside the second recess 129. Can be separated.

The active region IA1 may be injected with electrons and holes through the first conductivity type semiconductor layer 124 and the second conductivity type semiconductor layer 127 to generate light having the maximum intensity in the ultraviolet wavelength band.

The inactive region OA1 may be a region in which electron and hole bonding does not occur. The inactive region OA1 may absorb light irradiated from the active region or the outside, and the excited electrons may emit light through recombination. However, the emission intensity of the inactive region OA1 may be very weak compared to the emission intensity of the active region. Alternatively, the inactive region OA1 may not emit light at all. Therefore, the emission intensity of the inactive region OA1 may be lower than the emission intensity of the active region IA1.

The area of the active area IA1 disposed inside the second recess 129 may be larger than the area of the inactive area OA1 disposed outside the second recess 129.

The passivation layer 180 surrounding the side surface and the top surface of the light emitting structure 120 is formed with the light emitting structure 120 due to heat generated by the operation of the light emitting device, external high temperature, high humidity, and a difference in thermal expansion coefficient with the light emitting structure 120. Peeling may occur. Alternatively, cracks or the like may be generated in the passivation layer 180.

When peeling or cracking occurs in the passivation layer 180, the light emitting structure 120 may be oxidized by external moisture or contaminants penetrating the light emitting structure 120 from the outside.

In the case of the ultraviolet light emitting device, since the Al composition of the active layer 126 is relatively high, it may be more susceptible to oxidation. Accordingly, when the sidewalls of the light emitting structure 120 are exposed by cracks or the like, the active layer 126 may be rapidly oxidized and the light output may be lowered.

According to an embodiment, the second recess 129 may be disposed between the inactive region OA1 and the active region IA1 to function as a barrier. In addition, the separation distance between the inactive region OA1 and the active region IA1 may be increased by the second recess 129. Therefore, even if the inactive region OA1 of the active layer 126 is oxidized, the active region IA1 of the active layer 126 may be prevented from being oxidized by the second recess 129.

Referring to FIG. 9, the thickness T1 of the first insulating layer 131 may correspond to the depth h1 of the first recess 128 and the second recess 129. That is, the thickness T1 of the first insulating layer 131 may be equal to or greater than the depths of the first recess 128 and the second recess 129. Therefore, the first insulating layer 131 may fill the interior of the first recess 128 and the second recess 129. However, the thickness T1 of the first insulating layer 131 is not necessarily limited thereto, and may be smaller than the depth h1 of the first recess 128 and the second recess 129.

The first insulating layer 131 may include a first protrusion 131a disposed inside the first recess 128 and a second protrusion 131b disposed inside the second recess 129. . The second protrusion 131b and the first protrusion 131a may extend to the bottom surface 120a of the light emitting structure 120 and be connected to each other.

The first protrusion 131a may be disposed inside the first recess 128. Accordingly, the first protrusion 131a may penetrate through the second conductive type semiconductor layer 127, the active layer 126, and some regions of the first conductive type semiconductor layer 124.

A through hole TH1 may be formed in the first protrusion 131a. The first electrode 142 may be disposed in the through hole TH1 of the first protrusion 131a to be electrically connected to the first conductive semiconductor layer 124.

The second protrusion 131b may be disposed inside the second recess 129. Accordingly, the second protrusion 131b may penetrate through the second conductivity type semiconductor layer 127, the active layer 126, and some regions of the first conductivity type semiconductor layer 124.

The second protrusion 131b may separate the active layer 126 into an inactive region OA1 and an active region IA1. Therefore, current may hardly be dispersed in the active layer 126 disposed outside the second protrusion 131b. In addition, the second protrusion 131b can effectively prevent the active layer 126 of the active region IA1 from being oxidized.

The height h1 of the first recess 128 may be the same as the height h1 of the second recess 129. That is, the height of the first protrusion 131a may be the same as the height of the second protrusion 131b. However, the present invention is not limited thereto, and the height h1 of the first recess 128 may be different from the height h1 of the second recess 129. For example, the height h1 of the first recess 128 may be higher than the height h1 of the second recess 129. For example, the first recess 128 should be formed in the first conductivity type semiconductor layer 124 to a region having a low contact resistance with the first electrode 142, while the second recess 129 has an active layer 126 ) May be sufficient to separate. Conversely, the height h1 of the second recess 129 may be higher than the height h1 of the first recess 128. In this case, the water penetration path on the side of the light emitting structure 120 is long, and reliability may be improved.

The inclination angle θ ₁ of the first recess 128 may be the same as the inclination angle θ ₂ of the second recess 129. However, the present invention is not limited thereto, and the inclination angles of the second recess 129 and the first recess 128 may be different. For example, the inclination angle of the second recess 129 may be greater than the inclination angle of the first recess 128. In this case, the area of the active region IA1 may be increased by reducing the width of the second recess 129. Alternatively, the inclination angle of the second recess 129 may be smaller than that of the first recess 128. In this case, reliability may be improved by increasing the separation distance between the active region IA1 of the active layer 126 and the inactive region OA1.

The first electrode 142 is disposed inside the first recess 128 and can be electrically connected to the first conductive semiconductor layer 124. Further, the second electrode 146 may be disposed on the lower surface of the second conductivity-type semiconductor layer 127 to be electrically connected.

The first conductive layer 165 may include a plurality of protruding electrodes 165a that penetrate through the first recess 128 and the second insulating layer 132 and are electrically connected to the plurality of first electrodes 142. have. Accordingly, the first conductive layer 165 and the plurality of first electrodes 142 may be defined as first channel electrodes.

The first conductive layer 165 may be made of a material having excellent reflectance. For example, the first conductive layer 165 may include metals such as Ti, Ni, and Al. For example, when the first conductive layer 165 includes aluminum, ultraviolet light emitted from the active layer 126 may be reflected upward.

The second conductive layer 150 may be electrically connected to the second electrode 146 and the electrode pad 166. Accordingly, the electrode pad 166, the second conductive layer 150, and the second electrode 146 may form one electrical channel. Accordingly, the second electrode 146 and the second conductive layer 150 may be defined as second channel electrodes. In this case, a cover layer 143 may be disposed between the second electrode 146 and the second conductive layer 150. The cover layer 143 may prevent the second conductive layer 150 from being oxidized by the second electrode 146. For example, the cover layer 143 may include Ni, Au, Ti, etc., but is not limited thereto.

The second conductive layer 150 includes a lower portion of the second electrode 146, a lower portion of the first insulating layer 131, a lower portion of the second recess 129, a lower portion of the light emitting structure 120, and an electrode pad 166. ).

The second conductive layer 150 is made of a material having good adhesion to the first insulating layer 131, and is made of at least one material selected from the group consisting of materials such as Cr, Ti, Ni, Au, and alloys thereof. It may be made of a single layer or a plurality of layers.

The second conductive layer 150 may be disposed between the first insulating layer 131 and the second insulating layer 132. Accordingly, the second conductive layer 150 may be protected by the first insulating layer 131 and the second insulating layer 132 from penetration of external moisture or contaminants. In addition, the second conductive layer 150 is disposed inside the light emitting element, and ends may be wrapped by the first insulating layer 131 and the second insulating layer 132 so as not to be exposed from the outermost side of the light emitting element. .

The second conductive layer 150 may include a first conductive region 150a, a second conductive region 150b, and a step portion 150c. The first conductive region 150a may be disposed inside based on the second recess 129, and the second conductive region 150b may be disposed outside based on the second recess 129. That is, the first conductive region 150a may be disposed in the active region IA1, and the second conductive region 150b may be disposed in the inactive region OA1.

The stepped portion 150c may be disposed inside the second recess 129 and overlap the second recess 129 and the second protrusion 131b in the vertical direction of the light emitting structure 120.

According to an embodiment, since the first insulating layer 131 fills the interior of the second recess 129 as a whole, the step portion 150c may be relatively low. In some cases, the step portion 150c may be removed. Therefore, the upper surface 150c-1 of the stepped portion 150c may be disposed lower than the lower surface of the active layer 126. In addition, the upper surface 150c-1 of the stepped portion 150c may be disposed lower than the bottom surface 120a of the light emitting structure 120. According to this configuration, the flatness of the second conductive layer 150 may be improved, thereby improving the problem that the light emitting structure 120 is peeled off during the LLO process.

When the first insulating layer 131 is relatively thin, the step portion 150c is disposed to the inside of the second recess 129, so the step can be relatively large. Accordingly, a problem that the light emitting structure 120 is peeled off during the LLO process may occur.

The second conductive layer 150 may have a plurality of steps in addition to the step portion 150c. However, the highest point in the second conductive layer 150 based on the conductive substrate 170 may be disposed lower than the bottom surface of the light emitting structure 120. Therefore, since the flatness of the second conductive layer 150 is improved, optical and/or electrical characteristics may be improved.

The second conductive layer 150 may extend outside the light emitting structure 120. That is, the second conductive layer 150 may extend outside the inactive region OA1 of the light emitting structure 120. According to this configuration, the flatness of the second conductive layer 150 can be further improved.

The second insulating layer 132 may electrically insulate the first conductive layer 165 from the second conductive layer 150. The first insulating layer 131 and the second insulating layer 132 may be made of the same material as each other, or may be made of different materials.

The second insulating layer 132 may extend into the first recess 128. However, since the second recess 129 is covered by the first insulating layer 131, the second insulating layer 132 may not be disposed inside the second recess 129. Therefore, the first insulating layer 131 is disposed inside the first recess 128 and the second recess 129, while the second insulating layer 132 is inside the first recess 128. Can only be placed.

The bonding layer 160 may be disposed along the shape of the lower surface of the light emitting structure 120 and the first recess 128. The bonding layer 160 may include a conductive material. For example, the bonding layer 160 may include a material selected from the group consisting of gold, tin, indium, aluminum, silicon, silver, nickel, and copper, or alloys thereof.

The conductive substrate 170 may include a metal or semiconductor material. The conductive substrate 170 may be a metal having excellent electrical conductivity and/or thermal conductivity. In this case, heat generated during operation of the light emitting device can be quickly discharged to the outside. In addition, the first electrode 142 may be supplied with a current from the outside through the conductive substrate 170.

The conductive substrate 170 may include a material selected from the group consisting of silicon, molybdenum, silicon, tungsten, copper, and aluminum or alloys thereof.

FIG. 11 is a plan view of a light emitting device according to a third embodiment of the present invention, FIG. 12 is a cross-sectional view taken along line B-B in FIG. 11, and FIG. 13 is a partially enlarged view of FIG. 12.

11 to 13, the first conductive semiconductor layer exposed by the second through hole TH2 and the second through hole TH2 penetrating the extension portion 131d of the first insulating layer 131 A sub-electrode 142-1 electrically connected to the 124 may be further included.

At this time, the diameter of the sub-electrode 142-1 may be smaller than the diameter of the first electrode 142 disposed in the first through hole TH1. Since the region where the extension portion 131d of the first insulating layer 131 is disposed is relatively smaller than the diameter of the first recess 128, the diameter of the sub-electrode 142-1 is smaller than the first electrode 142. Can lose.

In addition, in the embodiment, the plurality of sub-electrodes is described as being spaced apart from each other, but is not limited thereto. For example, the sub-electrode may be arranged to surround the first recess 128 along the second recess 129.

According to this configuration, light can be improved by dispersing and dissipating current in the outer region through the sub-electrode 142-1, while improving low-current characteristics. Therefore, the current is evenly distributed to the side surface of the light emitting structure 120, thereby increasing the light output and improving light uniformity.

14 is a cross-sectional view of a light emitting device according to a fourth embodiment of the present invention, and FIG. 15 is a plan view of a light emitting device according to a fifth embodiment of the present invention.

14, the light emitting device according to the embodiment includes a first conductivity type semiconductor layer 124, an active layer 126, and a second conductivity type semiconductor layer 127, and the second conductivity type semiconductor layer 127 The light emitting structure 120 including the first recess 128 disposed through a portion of the first conductive semiconductor layer 124 through the active layer 126 and the first conductive semiconductor layer 124 and the electrical A second electrode 146 electrically connected to the first electrode 142 and the second conductivity type semiconductor layer 127 connected to each other may be included.

The substrate 110 may be formed of a material selected from sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, but is not limited thereto. The substrate 110 may be a light-transmitting substrate through which light in the ultraviolet wavelength band can pass.

The buffer layer 111 may relieve lattice mismatch between the substrate 110 and the semiconductor layers. The buffer layer 111 may be formed of a combination of Group III and V elements, or may include any one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. In this embodiment, the buffer layer 111 may be AlN, but is not limited thereto. The buffer layer 111 may include a dopant, but is not limited thereto.

The first insulating layer 131 is disposed between the first electrode 142 and the second electrode 146, and the second insulating layer 132 covers the second electrode 146 and the first electrode 142. Some can be exposed.

The first pad 153 may extend into the first recess 128 and be electrically connected to the first electrode 142. Also, the second pad 163 may penetrate the second insulating layer 132 and be electrically connected to the second electrode 146. Such a light emitting device may have a flip chip structure

Referring to FIG. 15, the first insulating layer 131 may include an extension portion 131d extending inwardly from the edge portion 131c. In addition, the second electrode 146 may also have a concave portion (not shown) corresponding to the extension portion 131d. Such a configuration may include all of the aforementioned configurations. That is, the extension portion 131d of the first insulating layer 131 and/or the concave portion of the second electrode 146 are disposed between the plurality of outer recesses to improve low current characteristics and deterioration or burnt of the light emitting structure. ) Can improve the phenomenon.

16 is a cross-sectional view of a light emitting device according to a sixth embodiment of the present invention, FIG. 17 is a plan view showing an electrode structure according to a sixth embodiment of the present invention, FIG. 18 is a partially enlarged view of FIG. 17, and FIG. 19 Is a modification of FIG. 18.

Referring to FIG. 16, a semiconductor device according to an embodiment of the present invention includes a light emitting structure 220; A first insulating layer 271 disposed on the light emitting structure 220; A first electrode 251 disposed on the first conductive semiconductor layer 221; A second electrode 261 disposed on the second conductivity-type semiconductor layer 223; A first cover electrode 252 disposed on the first electrode 251; A second cover electrode 262 disposed on the second electrode 261; And a second insulating layer 272 disposed on the first cover electrode 252 and the second cover electrode 262.

The substrate 210 may be formed of a material selected from sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, but is not limited thereto. The substrate 210 may be a light-transmitting substrate through which light in the ultraviolet wavelength band can transmit.

The buffer layer 211 may relieve lattice mismatch between the substrate 210 and the semiconductor layers. The buffer layer 211 may be formed of a combination of a group III and a group V element, or may include any one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. In this embodiment, the buffer layer 211 may be AlN, but is not limited thereto. The buffer layer 211 may include a dopant, but is not limited thereto.

The first insulating layer 271 may be disposed between the first electrode 251 and the second electrode 261. Specifically, the first insulating layer 271 may include a first hole 271a in which the first electrode 251 is disposed and a second hole 271b in which the second electrode 261 is disposed.

The first electrode 251 may be disposed on the first conductivity type semiconductor layer 221, and the second electrode 261 may be disposed on the second conductivity type semiconductor layer 223.

The first cover electrode 252 may be disposed on the first electrode 251. The first cover electrode 252 may cover the side surface of the first electrode 251. In this case, since the contact area between the first cover electrode 252 and the first electrode 251 is wide, the operating voltage may be lowered.

The second cover electrode 262 may be disposed on the second electrode 261. The second cover electrode 262 may cover the side surface of the second electrode 261, but is not limited thereto. For example, the second cover electrode 262 may be disposed only on the second electrode 261.

The first cover electrode 252 and the second cover electrode 262 are Ni/Al/Au, or Ni/IrOx/Au, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru , Mg, Zn, Pt, Au, Hf, but may be formed, but is not particularly limited. However, the first cover electrode 252 and the second cover electrode 262 may include gold (Au) on the outermost layers exposed to the outside. Gold (Au) prevents corrosion of the electrode and improves electrical conductivity, making electrical connection with the pad smooth.

The second insulating layer 272 may be disposed on the first cover electrode 252, the second cover electrode 262, and the first insulating layer 271. The second insulating layer 272 may include a third hole 252a exposing the first cover electrode 252 and a fourth hole 262a exposing the second cover electrode 262.

The boundary between the first insulating layer 271 and the second insulating layer 272 may partially disappear.

The first pad 253 may be disposed on the first cover electrode 252, and the second pad 263 may be disposed on the second cover electrode 262. The first pad 253 and the second pad 263 may be eutectic bonding, but are not limited thereto.

16 and 17, the light emitting structure 220 may include a light emitting unit M1 protruding by etching. The light emitting unit M1 may include an active layer 222 and a second conductivity type semiconductor layer 223.

The light emitting unit M1 may include a plurality of first light emitting units M11 extending in a vertical direction and a second light emitting unit M12 extending in a horizontal direction to connect the plurality of first light emitting units M11. .

The second electrode 261 may include a plurality of second branch electrodes 261a disposed on the first light emitting unit and a second connection electrode 261b connecting the plurality of second branch electrodes 261a. In addition, the first electrode 251 is a first connection electrode 251b connecting a plurality of first branch electrodes 251a and a plurality of first branch electrodes 251a disposed between the plurality of second branch electrodes 261a. ).

In this case, the second electrode 261 may include a plurality of concave portions 261d disposed on side surfaces. In addition, the first electrode 251 may also include a plurality of concave portions 251d disposed on side surfaces.

Referring to FIG. 18, a first insulating layer 271 may be disposed between the concave portion 251d of the first electrode 251 and the concave portion 261d of the second electrode 261. The first insulating layer 271 may include a concave portion 251d of the first electrode 251 and an extension portion 271b corresponding to the concave portion 261d of the second electrode 261.

Referring to FIG. 19, the light emitting unit M1 may have a curved shape rather than a straight shape. That is, the light emitting unit M1, the first electrode 251, and the second electrode 261 may have a curved shape.

20 is a conceptual diagram of a light emitting device package according to an embodiment of the present invention, and FIG. 21 is a plan view of the light emitting device package according to an embodiment of the present invention.

Referring to FIG. 20, the light emitting device package is disposed on the body 2 on which the groove 3 is formed, the light emitting device 1 disposed on the body 2, and the light emitting device 1 disposed on the body 2 and electrically connected to the light emitting device 1. It may include a pair of lead frames (5a, 5b) are connected. The light emitting element 1 may include all of the above-described configurations.

The body 2 may include a material or coating layer that reflects ultraviolet light. The body 2 may be formed by stacking a plurality of layers 2a, 2b, 2c, 2d, and 2e. The plurality of layers 2a, 2b, 2c, 2d and 2e may be the same material or may include different materials.

The groove 3 may be formed to be wider as it is farther from the light emitting device, and a step 3a may be formed on the inclined surface.

Referring to FIG. 21, the light emitting device 10 is disposed on the first lead frame 5a and may be connected to the second lead frame 5b by a wire. At this time, the first lead frame 5a and the second lead frame 5b may be arranged to surround the side surface of the light emitting device 10.

The light-transmitting layer 4 may cover the groove 3. The light-transmitting layer 4 is made of glass, but is not necessarily limited thereto. The light-transmitting layer 4 is not particularly limited as long as it is a material capable of effectively transmitting ultraviolet light. The interior of the groove 3 may be an empty space.

The light emitting device can be applied to various types of light source devices. Illustratively, the light source device may be a concept including a sterilizing device, a curing device, a lighting device, and a display device and a vehicle lamp. That is, the light emitting element can be applied to various electronic devices that are disposed in a case and provide light.

The sterilizing device may include a light emitting device according to an embodiment to sterilize a desired area. The sterilization device may be applied to household appliances such as water purifiers, air conditioners, and refrigerators, but is not limited thereto. That is, the sterilization device can be applied to all of various products (eg, medical devices) that require sterilization.

Illustratively, the water purifier may include a sterilizing device according to an embodiment to sterilize circulating water. The sterilizing device can be disposed on a nozzle or outlet through which water circulates to irradiate ultraviolet rays. At this time, the sterilization device may include a waterproof structure.

The curing device may be equipped with a light emitting device according to an embodiment to cure various types of liquids. The liquid may be a concept including all of various materials that are cured when irradiated with ultraviolet rays. Illustratively, the curing device can cure various types of resins. Alternatively, the curing device may be applied to cure beauty products such as nail polish.

The lighting device may include a light source module including a substrate and a light emitting device of the embodiment, a heat dissipation unit for dissipating heat of the light source module, and a power supply unit for processing or converting an electrical signal received from the outside and providing the light source module. Further, the lighting device may include a lamp, a head lamp, or a street light.

The display device may include a bottom cover, a reflector, a light emitting module, a light guide plate, an optical sheet, a display panel, an image signal output circuit, and a color filter. The bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may constitute a backlight unit.

The reflector is disposed on the bottom cover, and the light emitting module can emit light. The light guide plate is disposed in front of the reflector to guide light emitted from the light emitting module to the front, and the optical sheet may include a prism sheet or the like to be disposed in front of the light guide plate. The display panel is disposed in front of the optical sheet, an image signal output circuit supplies an image signal to the display panel, and a color filter can be disposed in front of the display panel.

The embodiments have been mainly described above, but this is merely an example, and is not intended to limit the present invention. Those of ordinary skill in the art to which the present invention pertains are not exemplified above, without departing from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be implemented by modification. And differences related to these modifications and applications should be construed as being included in the scope of the invention defined in the appended claims.

Claims (16)

A first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and including the second conductivity type semiconductor layer and the active layer A light emitting structure including a plurality of recesses arranged to a portion of the first conductivity type semiconductor layer; And
And a second electrode electrically connected to the second conductivity type semiconductor layer,
The outermost portion of the second electrode includes a concave portion that is concave toward the inside of the light emitting structure,
The concave portion is a light emitting device that is disposed between the plurality of recesses.
According to claim 1,
Each of the plurality of recesses is a light emitting device that is disposed to be shifted in a horizontal direction with the nearest recess.
According to claim 1,
The plurality of recesses include a plurality of inner recesses and a plurality of outer recesses,
The number of adjacent recesses surrounding the outer recess is less than the number of adjacent recesses surrounding the inner recess,
The concave portion is a light-emitting element disposed concavely between the outer recesses on the side surface of the second electrode.
According to claim 3,
A virtual line connecting the centers of the plurality of outer recesses surrounds the plurality of inner recesses.
According to claim 1,
A first insulating layer disposed inside the recess and at an edge of a lower surface of the light emitting structure,
The first insulating layer includes an edge portion disposed on an edge of a lower surface of the light emitting structure and an extension portion extending from the edge portion into the recess of the insulating layer.
The method of claim 5,
A first electrode contacting the first conductive semiconductor layer;
A through electrode disposed inside the recess and connected to a first electrode; And
A light emitting device comprising a first conductive layer connecting the through electrode.
The method of claim 6,
A second conductive layer electrically connected to the second electrode;
A second insulating layer disposed between the first conductive layer and the second conductive layer; And
A light emitting device comprising an electrode pad electrically connected to the second conductive layer.
The method of claim 7,
The light emitting structure includes a first side and a third side facing each other, a second side and a fourth side facing each other, and a fifth side facing the electrode pad,
The fifth side surface is a light emitting device having a curvature corresponding to the shape of the electrode pad.
The method of claim 8,
The concave portion includes a first concave portion disposed on the first side and the third side, and a second concave portion disposed on the fifth side,
The second recess is a light emitting device that is larger than the first recess.
The method of claim 6,
And a first recessed semiconductor layer, an active layer, a second conductive semiconductor layer, and a second recess penetrating the second conductive semiconductor layer and the active layer to a portion of the first conductive semiconductor layer. ,
The second recess is a light emitting device surrounding the recess.
The method of claim 10,
The first insulating layer includes a first protrusion disposed inside the recess and a second protrusion disposed inside the second recess.
The method of claim 11,
The active layer is a light emitting device that is separated into an inactive region and an active region by the second protrusion.
The method of claim 11,
A first through hole passing through the first protrusion;
A second through hole penetrating the second protrusion; And
A light emitting device including a sub-electrode disposed in the second through hole.
The method of claim 13,
The diameter of the sub-electrode is smaller than the diameter of the first electrode.
The method of claim 13,
The second through hole and the sub-electrode disposed in the second recess are disposed to surround the recess along the second recess.
According to claim 1,
A light emitting device including a conductive substrate on which the light emitting structure is disposed.

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