KR20210030718A - Semiconductor device - Google Patents

Abstract

An embodiment of the present invention provides a semiconductor device with improved crystallinity. The semiconductor device comprises: a substrate area; and a semiconductor structure disposed on the substrate area and including a first conductivity type semiconductor area including aluminum, an active area including aluminum, and a second conductivity type semiconductor area including aluminum.

Description

Semiconductor device {SEMICONDUCTOR DEVICE}

The embodiment relates to a semiconductor device.

A semiconductor device including a compound such as GaN or AlGaN has many advantages, such as having a wide and easy-to-adjust band gap energy, and thus can be variously used as a light emitting device, a light receiving device, and various diodes.

In particular, light emitting devices such as light emitting diodes and laser diodes using a group 3-5 or group 2-6 compound semiconductor material of semiconductors are red, green, and red by the development of thin film growth technology and device materials. Various colors such as blue and ultraviolet light can be implemented, and efficient white light can be realized by using fluorescent materials or by combining colors. Low power consumption, semi-permanent life, and fast response speed compared to conventional light sources such as fluorescent lamps and incandescent lamps. , Has the advantages of safety and environmental friendliness.

In addition, when photo-receiving devices such as photodetectors and solar cells are also manufactured using compound semiconductor materials of groups 3-5 or 2-6 of semiconductors, the development of device materials generates photocurrent by absorbing light in various wavelength ranges. By doing so, light in various wavelength ranges from gamma rays to radio wavelength ranges can be used. In addition, it has the advantages of fast response speed, safety, environmental friendliness, and easy adjustment of device materials, so it can be easily used for power control or ultra-high frequency circuits or communication modules.

Therefore, the semiconductor device can replace the transmission module of the optical communication means, the light emitting diode backlight that replaces the Cold Cathode Fluorescence Lamp (CCFL) that constitutes the backlight of the LCD (Liquid Crystal Display) display device, and the fluorescent lamp or incandescent light bulb. Applications are expanding to white light emitting diode lighting devices, automobile headlights, traffic lights, and sensors that detect gas or fire. In addition, the application of the semiconductor device can be extended to high-frequency application circuits, other power control devices, and communication modules.

In particular, a light emitting device that emits light in the ultraviolet wavelength range can be used for curing, medical, and sterilization by performing a curing or sterilizing action.

Although research on ultraviolet light emitting devices is active in recent years, there is a problem that it is difficult to implement the ultraviolet light emitting device as a flip chip, and crystallinity is deteriorated.

The embodiment provides a semiconductor device with improved crystallinity.

In addition, it provides a flip-chip ultraviolet semiconductor device.

In addition, a semiconductor device with improved ohmic characteristics is provided.

In addition, it provides a semiconductor device having excellent light extraction efficiency.

The problems to be solved in the examples are not limited thereto, and the objectives and effects that can be grasped from the solutions or embodiments of the problems described below are also included.

A semiconductor device according to an embodiment of the present invention includes a substrate region; And a semiconductor structure disposed on the substrate region and including a first conductivity type semiconductor region including aluminum, an active region including aluminum, and a second conductivity type semiconductor region including aluminum. The structure emits secondary ions including aluminum secondary ions, gallium secondary ions, carbon secondary ions, first dopant secondary ions, and second dopant secondary ions upon primary ion collision, and the aluminum secondary ions The intensity of the first point in the semiconductor structure is the largest ionic strength; A second largest point in an area spaced apart from the first point; A third point having the greatest ionic strength in a region located between the second point and the first point; A fourth point having the same ionic strength as the third point in a region located between the first point and the third point; And a fifth point having the lowest ionic strength in a region spaced apart from a fourth point in a first direction, which is a direction from the first point toward the second point, wherein the strength of the gallium secondary ion is Consisting of a sixth point having the highest ionic strength in a region spaced from the fourth point in a second direction, which is a direction from the second point to the first point; and the first conductivity type semiconductor region is in the first direction. A first region between the fourth point and the third point, the second conductivity type semiconductor region including a second region between the second point and the fifth point in the first direction, the The active region includes a third region between the second point and the third point, and the substrate region includes an aluminum protrusion region between the sixth point and the fourth point, and the concentration of the carbon secondary ions Is, a first concentration point having a highest concentration in a region spaced apart from the fifth point in the second direction, and the first concentration point may be located in the aluminum protrusion region.

The intensity of the gallium secondary ion includes a seventh point having the highest ionic strength in the first direction from the sixth point, wherein the first concentration point, the first point, and the fourth point are the seventh It may be located in an area spaced apart from the point in the second direction.

The intensity of the aluminum secondary ions may include an eighth point having the lowest ionic strength in a region located between the first point and the second point; And a ninth point having the greatest ionic strength in a region located between the third point and the fourth point, wherein the second point is higher than the third point, the fourth point, and the ninth point, The third point may be higher than the eighth point, and the eighth point may be higher than the fifth point.

The first point may be located between the fourth point and the sixth point.

The secondary ionic strength of aluminum emitted from the active region includes a plurality of peaks and a plurality of valleys, and the ionic strength of the plurality of peaks may be lower than the first point and the second point.

The secondary ions further include secondary ions of the first dopant, the first dopant includes silicon, and the doping concentration of the secondary ions of the first dopant is emitted from the first conductivity type semiconductor region. The first doping concentration having the highest concentration; A second doping concentration emitted from the first conductivity type semiconductor region and lower than the first doping concentration; A third doping concentration having the highest concentration in a region spaced apart from the first doping concentration in the first direction; A fourth doping concentration having the lowest concentration in a region between the third doping concentration and the first doping concentration; A fifth doping concentration having the lowest concentration in a region spaced apart from the fourth doping concentration in the first direction; And a sixth doping concentration having the highest concentration in a region between the fourth doping concentration and the fifth doping concentration.

The second doping concentration may be lower than the first doping concentration, the third doping concentration, and the sixth doping concentration.

The fourth doping concentration may be emitted from the active region, and the sixth doping concentration may be emitted from the second conductivity type semiconductor region.

The active area may include a well area; And a barrier region, and the third point may be emitted from the barrier region located at the outermost side in the second direction.

A ratio of the first point and the fifth point may be 1:0.3 to 1:0.45.

A ratio of the second point and the fifth point may be 1:0.42 to 1:0.85.

A ratio of the second point and the first point may be in the range of 1:1.1 to 1:1.9.

The primary ion may include any one of O2+, Cs+, and Bi+.

The semiconductor structure may further include a substrate region including aluminum, and the substrate region may include a region between the first point and the fourth point.

The first concentration point may be located between the third point and the first point.

According to the embodiment, a semiconductor device with improved crystallinity may be implemented.

In addition, the ohmic characteristics are improved to lower the operating voltage.

In addition, a semiconductor device having excellent light extraction efficiency can be manufactured.

In addition, it is possible to manufacture a semiconductor device that prevents the occurrence of cracks.

Various and beneficial advantages and effects of the present invention are not limited to the above description, and will be more easily understood in the course of describing specific embodiments of the present invention.

1 is a structural diagram of a semiconductor device according to an embodiment of the present invention,
2 is a graph showing the aluminum composition of a semiconductor device according to an embodiment of the present invention,
3 is SIMS data of a semiconductor structure according to an embodiment of the present invention,
4 is a diagram showing the ionic strength of aluminum and the doping concentration of the first dopant,
5 is a view showing the ionic strength of aluminum,
6 is an enlarged view of part A in FIG. 5,
7 is an enlarged view of part B in FIG. 5,
8 is a diagram showing an ion concentration of aluminum, a doping concentration of a first dopant, and a doping concentration of a second dopant,
9A and 9B are conceptual diagrams of a semiconductor device according to an embodiment of the present invention,
10 is a conceptual diagram of a semiconductor device package according to an embodiment of the present invention.

These embodiments may be modified in different forms or may be combined with each other, and the scope of the present invention is not limited to each of the embodiments described below.

Even if a matter described in a specific embodiment is not described in another embodiment, it may be understood as a description related to another embodiment unless there is a description contradicting or contradicting the matter in another embodiment.

For example, if a feature for component A is described in a specific embodiment and a feature for component B is described in another embodiment, the description in which the embodiment in which the component A and the component B are combined is not explicitly described, but is contradictory or contradictory. Unless otherwise, it should be understood as belonging to the scope of the present invention.

In the description of the embodiment, in the case where one element is described as being formed "on or under" of another element, the above (top) or bottom (bottom) (on or under) includes both elements in direct contact with each other or in which one or more other elements are indirectly formed between the two elements. In addition, when expressed as "on or under", the meaning of not only an upward direction but also a downward direction based on one element may be included.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those of ordinary skill in the art may easily implement the present invention.

1 is a structural diagram of a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a graph showing an aluminum composition of a semiconductor device according to an embodiment of the present invention.

1 and 2, the semiconductor device according to the embodiment includes a buffer layer 121, a first conductivity type semiconductor layer 124, a second conductivity type semiconductor layer 127, and a first conductivity type semiconductor layer 124. ) And the second conductivity type semiconductor layer 127 may include a semiconductor structure 120 including an active layer 126.

In addition, in addition, the semiconductor device may further include a substrate 110 disposed under the buffer layer 121.

First, the semiconductor structure 120 according to an embodiment of the present invention may output light in an ultraviolet wavelength band. For example, the semiconductor structure 120 may output light (UV-A) in the near ultraviolet wavelength band, may output light (UV-B) in the far ultraviolet wavelength band, and may output light in the deep ultraviolet wavelength band (UV-C). ) Can be printed. The wavelength range may be determined by the aluminum composition ratio of the semiconductor structure 120.

Exemplarily, light in the near ultraviolet wavelength band (UV-A) may have a peak wavelength in the range of 320 nm to 420 nm, and light in the far ultraviolet wavelength band (UV-B) may have a peak wavelength in the range of 280 nm to 320 nm, Light in the deep ultraviolet wavelength band (UV-C) may have a peak wavelength in the range of 100 nm to 280 nm.

The substrate 110 may be formed of, for example, at least one of sapphire (Al2O3), SiC, GaAs, GaN, ZnO, Si, GaP, InP, or Ge, and is not limited to this type.

Further, the substrate 110 may be removed by a laser lift off (LLO) process, but is not limited thereto, and light may be transmitted.

When the semiconductor structure 120 emits light in the ultraviolet wavelength band, each semiconductor layer of the semiconductor structure 120 includes aluminum Inx1Aly1Ga1-x1-y1N (0≤x1≤1, 0<y1≤1, 0≤x1) +y1≤1) may contain a material. Here, the composition of Al can be represented by the ratio of the total atomic weight including the atomic weight of In, the atomic weight of Ga, and the atomic weight of Al and the atomic weight of Al. For example, when the Al composition is 40%, the composition of Ga may be 60%, and this composition ratio can be expressed as _{Al 40} Ga _{60 N.}

In addition, in the description of the embodiment, the meaning of the composition being low or high may be understood as a difference (% points) in the composition% of each semiconductor layer. For example, if the aluminum composition of the first semiconductor layer is 30% and the aluminum composition of the second semiconductor layer is 60%, the aluminum composition of the second semiconductor layer is 30% higher than the aluminum composition of the first semiconductor layer. I can express it.

Specifically, the buffer layer 121 may include AlN. By this configuration, the difference between the lattice constant and the first conductivity type semiconductor layer on the top is minimized and light absorption is prevented.

The buffer layer 121 may improve crystallinity or alleviate lattice mismatch. The buffer layer 121 may not be doped with a dopant, but a dopant may be intentionally or unintentionally doped in some regions.

The buffer layer 121 may have the highest aluminum composition in a semiconductor device. For example, the first buffer layer 121a may be AlN, but is not limited thereto, and may be AlGaN having a high aluminum composition.

The first conductivity type semiconductor layer 124 may be implemented as a compound semiconductor such as Group III-V or Group II-VI, and may be doped with a first dopant. The first conductivity type semiconductor layer 124 is a semiconductor material having a composition formula of Inx1Aly1Ga1-x1-y1N (0≤x1≤1, 0<y1≤1, 0≤x1+y1≤1), for example, AlGaN, AlN, It can be selected from InAlGaN and the like. In addition, the first dopant may be an n-type dopant such as Si, Ge, Sn, Se, and Te. When the first dopant is an n-type dopant, the first conductivity-type semiconductor layer 124 doped with the first dopant may be an n-type semiconductor layer. In this specification, the first dopant is described as Si.

The first conductivity-type semiconductor layer 124 may include a first sub-semiconductor layer 124a, a second sub-semiconductor layer 124b, and a third sub-semiconductor layer 124c.

When the semiconductor structure 120 emits light (UV-C) in the deep ultraviolet wavelength band, the aluminum composition of the first sub-semiconductor layer 124a may be 50% to 80%.

In addition, when the aluminum composition of the first sub-semiconductor layer 124a is 50% or more, it is possible to improve light extraction efficiency by lowering the absorption rate of light (UV-C) in the deep ultraviolet wavelength band emitted from the active layer 126, and 80%. In the following cases, a current injection characteristic into the active layer 126 and a current diffusion characteristic in the first sub-semiconductor layer 124a can be secured.

Also, the first sub-semiconductor layer 124a may be disposed closest to the buffer layer 121.

The second sub-semiconductor layer 124b is disposed on the first sub-semiconductor layer 124a, and the aluminum composition may be smaller than that of the first sub-semiconductor layer 124a. In this case, it may be more advantageous to extract light from the active layer 126 to the outside of the semiconductor structure 120 due to a difference in refractive index, so that the light extraction efficiency of the semiconductor structure 120 may be improved.

In an embodiment, the aluminum composition of the second sub-semiconductor layer 124b may be 40% to 70%. When the aluminum composition of the second sub-semiconductor layer 124b is 40% or more, the absorption rate of light (UV-C) in the deep ultraviolet wavelength band emitted from the active layer 126 may be lowered, thereby improving light extraction efficiency. In addition, when the aluminum composition of the second sub-semiconductor layer 124b is 70% or less, a current injection characteristic into the active layer 126 and a current diffusion characteristic in the second sub-semiconductor layer 124b can be secured.

The thickness of the second sub-semiconductor layer 124b may be thinner than that of the first sub-semiconductor layer 124a. The first sub-semiconductor layer 124a may be 130% or more of the thickness of the second sub-semiconductor layer 124b. According to this configuration, since the second sub-semiconductor layer 124c is disposed after sufficiently securing the thickness of the first sub-semiconductor layer 124a having a high aluminum composition, crystallinity of the entire semiconductor structure 120 may be improved.

The third sub-semiconductor layer 124c reduces the energy of the first carriers injected from the first conductivity-type semiconductor layer 124 toward the active layer 126 to recombine in the active layer 126. Or you can balance the density. Therefore, it is possible to improve the light output characteristics of the semiconductor device by improving the luminous efficiency. The aluminum composition of the third sub semiconductor layer 124c may be higher than that of the first conductivity type semiconductor layer 124, the active layer 126, and the second conductivity type semiconductor layer 127.

The active layer 126 may be disposed between the first conductivity type semiconductor layer 124 and the second conductivity type semiconductor layer 127. The active layer 126 is a layer where electrons (or holes) injected through the first conductivity type semiconductor layer 124 and holes (or electrons) injected through the second conductivity type semiconductor layer 127 meet. The active layer 126 transitions to a low energy level as electrons and holes recombine, and may generate light having an ultraviolet wavelength.

The active layer 126 may have any one of a single well structure, a multiple well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, or a quantum wire structure.

The active layer 126 may include a plurality of well layers 126a and a barrier layer 126b. The well layer 126a and the barrier layer 126b may have a composition formula of Inx2Aly2Ga1-x2-y2N (0≦x2≦1, 0<y2≦1, 0≦x2+y2≦1). The aluminum composition of the well layer 126a may vary depending on the wavelength at which it emits light.

The second conductivity type semiconductor layer 127 is disposed on the active layer 126 and may be implemented as a compound semiconductor such as group III-V or group II-VI. Dopants can be doped.

The second conductivity type semiconductor layer 127 is a semiconductor material having a composition formula of Inx5Aly2Ga1-x5-y2N (0≤x5≤1, 0<y2≤1, 0≤x5+y2≤1), or AlGaN, AlInN, AlN, AlGaAs , AlGaInP may be formed of a selected material.

When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, Ba, or the like, the second conductivity-type semiconductor layer 127 doped with the second dopant may be a p-type semiconductor layer.

The blocking layer 129 may be disposed between the active layer 126 and the second conductivity type semiconductor layer 127. The blocking layer 129 blocks the flow of carriers supplied from the first conductivity-type semiconductor layer 124 exiting the second conductivity-type semiconductor layer 127, and the probability that electrons and holes recombine in the active layer 126 Can increase.

The energy band gap of the blocking layer 129 may be larger than the energy band gap of the active layer 126 and the second conductivity type semiconductor layer 127. Since the blocking layer 129 is doped with a second dopant, it may be defined as a partial region of the second conductivity type semiconductor layer 127. That is, the second conductivity-type semiconductor layer 127 may be defined as a concept including a P-type semiconductor layer and a blocking layer 129.

The blocking layer 129 may be selected from a semiconductor material having a composition formula of Inx1Aly1Ga1-x1-y1N (0≤x1≤1, 0≤y1≤1, 0≤x1+y1≤1), for example, AlGaN, AlN, InAlGaN, etc. However, it is not limited thereto.

According to an embodiment, the buffer layer 121, the first conductivity type semiconductor layer 124, the active layer 126, the blocking layer 129, and the second conductivity type semiconductor layer 127 may all include aluminum. Accordingly, the first conductivity type semiconductor layer 124, the active layer 126, the blocking layer 129, and the second conductivity type semiconductor layer 127 may have a composition of AlGaN, InAlGaN, or AlN.

The blocking layer 129 may have an aluminum composition of 50% to 100%. When the aluminum composition of the blocking layer 129 is 50% or more, it may have a sufficient energy barrier to block the movement of carriers, and may not absorb light emitted from the active layer 126.

The blocking layer 129 may include a first blocking layer 129a and a second blocking layer 129b. The aluminum composition of the first blocking layer 129a may increase in a direction from the first conductivity type semiconductor layer 124 to the second conductivity type semiconductor layer 127.

The aluminum composition of the first blocking layer 129a may be 80% to 100%. Accordingly, the first blocking layer 129a may be a portion having the highest Al composition in the semiconductor structure 120. The first blocking layer 129a may be AlGaN or AlN. Alternatively, the first blocking layer 129a may be a super lattice layer in which AlGaN and AlN are alternately disposed.

The thickness of the first blocking layer 129a may be about 0.1 nm to 4 nm. In order to efficiently block the movement of carriers (eg, electrons), the thickness of the first blocking layer 129a may be 0.1 nm or more. In addition, in order to secure the injection efficiency of carriers (eg, holes) from the second conductivity type semiconductor layer 127 to the active layer 126, the thickness of the first blocking layer 129a may be 4 nm or less.

In addition, the third blocking layer 129c disposed between the first blocking layer 129a and the second blocking layer 129b may include a section that does not include a dopant. Accordingly, the third blocking layer 129c may serve to prevent diffusion of the dopant from the second conductivity type semiconductor layer 127 to the active layer 126.

The second conductivity-type semiconductor layer 127 may include a fourth sub-semiconductor layer 127a, a fifth sub-semiconductor layer 127b, and a sixth sub-semiconductor layer 127c.

The fourth sub-semiconductor layer 127a has a relatively uniform aluminum composition, so that the hole injection efficiency of the semiconductor structure 120 may be improved or crystallinity may be improved. The thickness of the fourth sub-semiconductor layer 127a may be 20 nm to 60 nm. The aluminum composition of the fourth sub-semiconductor layer 127a may be 40% to 80%.

The thickness of the fifth sub semiconductor layer 127b may be greater than 10 nm and less than 50 nm. For example, the thickness of the fifth sub-semiconductor layer 127b may be 25 nm. When the thickness of the fifth sub-semiconductor layer 127b is thicker than 10 nm, resistance decreases in the horizontal direction, so that current diffusion efficiency may be improved. In addition, when the thickness of the fifth sub-semiconductor layer 127b is less than 50 nm, the path through which light incident from the active layer 126 to the fifth sub-semiconductor layer 127b is absorbed may be shortened, and light extraction from the semiconductor device Efficiency can be improved.

The aluminum composition of the fifth sub-semiconductor layer 127b may be higher than that of the well layer 126a. The aluminum composition of the well layer 126a for generating deep ultraviolet or far ultraviolet light may be about 20% to 60%. Accordingly, the aluminum composition of the fifth sub-semiconductor layer 127b may be greater than 40% and less than 80%. For example, when the aluminum composition of the well layer 126a is 30%, the aluminum composition of the fifth sub-semiconductor layer 127b may be 40%.

If the average aluminum composition of the fifth sub-semiconductor layer 127b is lower than that of the well layer 126a, the light extraction efficiency may decrease because the fifth sub-semiconductor layer 127b has a high probability of absorbing ultraviolet light. have.

The sixth sub-semiconductor layer 127c may be a surface layer of the semiconductor structure 120 in contact with the second electrode. Current can be injected into the sixth sub-semiconductor layer 127c through the second electrode, and current injection efficiency can be controlled by the resistance between the sixth sub-semiconductor layer 127c and the second electrode. The resistance between the sixth sub-semiconductor layer 127c and the second electrode may be due to at least one of an ohmic contact, a Schottky contact, and a tunnel effect, but is not limited thereto.

The sixth sub-semiconductor layer 127c may be implemented as a compound semiconductor such as Group III-V or Group II-VI, and may be doped with a first dopant. The sixth sub-semiconductor layer 127c is a semiconductor material having a composition formula of Inx1Aly1Ga1-x1-y1N (0≤x1≤1, 0<y1≤1, 0≤x1+y1≤1), for example AlGaN, InAlGaN, AlN. Can be selected from, etc. In addition, the first dopant may be an n-type dopant such as Si, Ge, Sn, Se, and Te. That is, the sixth sub-semiconductor layer 127c may be the same n-type semiconductor layer as the first conductivity-type semiconductor layer 124.

However, the sixth sub-semiconductor layer 127c may include both a first dopant and a second dopant. The first dopant may be intentionally doped, while the second dopant may be a diffusion of the second dopant doped into the second conductivity type semiconductor layer 127. However, the present invention is not limited thereto, and the sixth sub-semiconductor layer 127c may be intentionally doped with the first dopant and the second dopant in order to activate the carrier.

Even if only the first dopant is doped into the sixth sub-semiconductor layer 127c, the doping concentration of the second dopant may be higher than that of the first dopant due to a memory effect.

In this case, a concentration ratio of the first dopant and the second dopant doped in the sixth sub-semiconductor layer 127c may be 0.01:1.0 to 0.8:1.0. When the concentration ratio is 0.01:1.0 to 0.8:1.0, ohmic resistance may be lowered due to a tunnel effect.

For example, the first dopant concentration of the sixth sub-semiconductor layer 127c may be 1×10 ¹⁸ cm ^-3 to 2×10 ²⁰ cm ^-3 . In addition, the concentration of the second dopant in the sixth sub-semiconductor layer 127c may be 1×10 ¹⁹ cm ^-3 to 2×10 ²¹ cm ^-3 .

In this case, the first dopant concentration of the sixth sub-semiconductor layer 127c may be equal to or higher than the first dopant concentration of the first conductivity type semiconductor layer 124 and the first dopant concentration of the barrier layer 126b.

The thickness of the sixth sub-semiconductor layer 127c may be 1 nm to 10 nm. When the thickness of the sixth sub-semiconductor layer 127c is thicker than 10 nm, there is a problem that carrier injection efficiency is deteriorated. Accordingly, the thickness of the sixth sub-semiconductor layer 127c may be smaller than that of the first conductivity-type semiconductor layer 124 and the second conductivity-type semiconductor layer 127.

The aluminum composition of the sixth sub-semiconductor layer 127c may be 20% to 70%. When the composition of aluminum is 20% or more, the difference in aluminum composition from the well layer 126a emitting ultraviolet rays may be reduced, so that light absorption may be improved. In addition, when the composition of aluminum is 70% or less, since the operating voltage is lowered, the light output may be improved.

The aluminum composition of the sixth sub-semiconductor layer 127c may decrease as it approaches the surface. The reduction width of the fifth sub-semiconductor layer 127b may be different or the same as the reduction width of the sixth sub-semiconductor layer 127c.

According to an embodiment, the aluminum composition Q3 of the sixth sub-semiconductor layer 127c may be smaller than the aluminum composition Q10 of the well layer 126a and the aluminum composition Q4 of the third sub-semiconductor layer 124c. . In this case, the resistance with the second electrode can be effectively reduced.

However, the present invention is not limited thereto, and since the hole injection efficiency is improved in the sixth sub-semiconductor layer 127c due to the tunnel effect, the aluminum composition may be controlled to be the same as the well layer 126a or higher than the well layer 126a. .

3 is a SIMS data of a semiconductor structure according to an embodiment of the present invention, FIG. 4 is a view showing the ionic strength of aluminum and the doping concentration of the first dopant, FIG. 5 is a view showing the ionic strength of aluminum, and FIG. 6 Is an enlarged view of part A in FIG. 5, FIG. 7 is an enlarged view of part B in FIG. 5, and FIG. 8 is a view showing an ion concentration of aluminum, a doping concentration of a first dopant, and a doping concentration of a second dopant,

Referring to FIG. 3, the semiconductor structure 120 has aluminum (Al), gallium (Ga), a first dopant, and a second dopant from the first conductivity-type semiconductor layer 124 to the second conductivity-type semiconductor layer 127. , The spectrum of carbon (C) may change. The first dopant may be silicon (Si) and the second dopant may be magnesium (Mg), but the present invention is not limited thereto.

The SIMS data may be analysis data by Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS).

The SIMS (SIMS) data can be analyzed by counting the number of secondary ions emitted by irradiating primary ions on the surface of the target. At this time, the primary ions may be selected from O2+, Cs+ Bi+, etc., the acceleration voltage may be adjusted within 20 to 30 keV, and the irradiation current may be adjusted within 0.1 pA to 5.0 pA.

The SIMS (SIMS) data is gradually etched from the surface of the second conductivity-type semiconductor layer 127 (E0, a point where the depth is 0) toward the first conductivity-type semiconductor layer 124 to collect secondary ion mass spectra. have. The secondary ions may be constituent elements constituting the semiconductor layer. Exemplarily, the secondary ion may be aluminum, gallium, carbon, a first dopant, and a second dopant, but is not limited thereto.

The result of SIMS analysis can be interpreted as a spectrum for the intensity of secondary ions (hereinafter referred to as'ion strength' or'intensity of ions') or doping concentration of secondary ions. In the analysis of the concentration, noise having a magnitude of within 5%, that is, 0.95 to 1.05 times the ionic strength or the doping concentration may be included. Accordingly, the description of “is equal to/is the same” may mean including noise of 0.95 times or more and 1.05 times or less of one specific secondary ionic strength or doping concentration.

For example, when there is a peak adjacent to a specific point, but has a size of 0.95 to 1.05 times that of the specific point, it can be understood that the surrounding peak has the same strength as the aluminum strength of the first point. In this case, the doping concentration, ionic strength, and peak in a certain section may mean the highest point.

In the SIMS data, aluminum (Al) and gallium (Ga) are spectral data for ionic strength, and the first dopant (Si), second dopant (Mg), and carbon (C) are spectral data for doping concentration. Can be calculated as That is, the first dopant, the second dopant, and carbon may mean a unit of concentration (Atoms/cm3), and aluminum and gallium may mean a unit of secondary ionic strength (Counts/sec.).

The ionic strength according to the embodiment may be increased or decreased depending on the measurement conditions. However, when the intensity of the primary ions increases, the intensity graph of the secondary ions (aluminum ions) also increases as a whole, and when the intensity of the primary ions decreases, the intensity graph of the secondary ions (aluminum ions) may decrease as a whole. Therefore, the change in the ionic strength in the thickness direction may be similar even if the measurement conditions are changed.

3 and 4, each point is defined based on a first point P1 having the highest aluminum secondary ionic strength and a fifth point P5 having the lowest ionic strength in the semiconductor structure 120 can do.

The first point P1 may be disposed farthest from the surface E0 of the semiconductor structure. In addition, when secondary ions of aluminum emitted from the substrate region include the first point P1, the substrate region may be made of an AlN material and may include air voids. In this case, light emitted from the active region may be scattered in the air voids, thereby improving light extraction efficiency.

In addition, the substrate region described herein may include the buffer layer and the substrate described above, the first conductivity type semiconductor region may be a first conductivity type semiconductor layer, and the second conductivity type semiconductor region may be a second conductivity type semiconductor layer, , The active region may be an active layer, and each sub-semiconductor region may be a sub-semiconductor layer. Also, the control region may be a control layer, the well region may be a well layer, and the barrier region may be a barrier layer. Also, the surface area may be a surface layer. In addition, each layer described based on FIG. 1 may correspond to each region to be described later. In other words, each region referred to in the SIMS data may refer to each layer as a “region” in the semiconductor structure.

In addition, in the present specification, after the point of the secondary ionic strength of aluminum is described, the point of the secondary ionic strength of gallium is described.

The second point P2 may be the highest aluminum secondary ionic strength among aluminum secondary ionic strengths emitted from a region between the fifth point P5 and the first point P1 to be described later. The first point P1 and the second point P2 may be disposed to be spaced apart from each other. In other words, the second point P2 may be a peak having the highest aluminum secondary ionic strength in a region between the fifth point P5 and the first point P1 spaced apart from each other. The distance between the second point P2 and the fifth point P5 may be smaller than the distance between the second point P2 and the first point P1.

This second point P2 may be the highest in the second conductivity type semiconductor region. Accordingly, the injection of the first carrier into the second conductivity type semiconductor region can be prevented, and non-luminescent recombination with the second carrier can be suppressed. Accordingly, it is possible to improve the light output of the semiconductor device. The second point P2 may be the ionic strength of the first blocking region, but is not limited thereto.

In addition, since the fifth point P5 has the lowest intensity of the secondary ionic strength of aluminum emitted from the semiconductor structure, light absorption may occur in a region located between the fifth point P5 and the second point P2. . Therefore, by arranging the distance between the second point P2 and the fifth point P5 less than the distance between the second point P2 and the first point P1, light absorption is minimized to improve light extraction efficiency. I can.

The third point P3 may be located between the second point P2 and the first point P1. In addition, the third point P3 may be the largest point among the secondary ionic strengths of aluminum in a region located between the second point P2 and the first point. Accordingly, by reducing the energy of the carriers passing to the region between the second point P2 and the fifth point P5, the non-emission recombination rate between carriers can be reduced, thereby improving the luminous efficiency of the semiconductor device.

Specifically, the third point P3 may be an intensity of an aluminum secondary ion having a peak closest to the first conductivity type semiconductor region among peaks of the active region (corresponding to the barrier layer described above) to be described later. That is, the third point P3 may be the ionic strength of the active region. The third point P3 may be a peak closest to the first conductivity type semiconductor region.

In addition, the third point P3 may be disposed closer to the second point P2 than the eighth point P8 to be described later. Therefore, by placing the position of the point where the energy of the carrier to pass to the area between the second point (P2) and the fifth point (P5) is lowered closer to the second point (P2), the non-luminescent recombination rate between carriers is more efficiently reduced. By lowering it, the luminous efficiency of the semiconductor device can be improved. Therefore, since the third point P3 controls the movement between carriers, it is possible to improve luminous efficiency and improve light output characteristics of the semiconductor device. In addition, in the present specification, the first carrier may be an electron/hole, and the second carrier may be a hole/electron.

Also, the active region may include a region between the second point P2 and the third point P3. Specifically, the active region may include a plurality of peaks P81 (see FIG. 6) and valleys P82 (see FIG. 6). The ionic strength of the peak P81 may be higher than the ionic strength of the valley P82. Carriers injected into the active region may recombine in the valley P82. Accordingly, the wavelength of light to emit may be determined according to the intensity of the aluminum secondary ion intensity of the valley P82, and for example, light within 100 nm to 280 nm may be emitted.

In addition, the ionic strength of the peak P81 may be smaller than the second point P2 and the third point P3. Therefore, the energy of the carrier injected into the active region from the third point P3 in the first direction D1 is lowered, and the luminous efficiency is improved by preventing the carrier from passing from the second point P2 to the first direction D1. It can be improved. In addition, the first direction D1 may be a direction from a point (first point P1) where the ionic strength of aluminum is highest in the semiconductor structure to a point P6 where the ionic strength of aluminum is lowest. In addition, the second direction D2 may be a direction opposite to the first direction D1.

The fourth point P4 may be a point having the same aluminum ionic strength as the third point P3 in a region displaced between the first point P1 and the third point P3. More specifically, the fourth point P4 may be located in an area between the ninth point P9 and the first point P1 to be described later.

In addition, the fourth point P4 may have an aluminum secondary ionic strength higher than the eighth point P3, the ninth point P9, and the fifth point P5, which will be described later.

In addition, the ionic strength emitted from the substrate region may have a first point P1 and a fourth point P5. In this case, as described above, the first point P1 may have the maximum ionic strength in the semiconductor device, and the fourth point P5 may have the same ionic strength as the third point P3.

In addition, the ionic strength of the first point P1, the ninth point P9, and the eighth point P8 may be sequentially decreased in the first direction D1. With this configuration, it is possible to improve the crystallinity of the semiconductor structure 120 by blocking a sudden decrease in ionic strength.

In addition, specifically, the first conductivity type semiconductor region may include a first region between the third point P3 and the first point P1, and the second conductivity type semiconductor region includes the second point P2 and the second point P2. A second area between the five points P5 may be included, and the active area may include a third area between the second point P2 and the third point P3.

The fifth point P5 may have the lowest ionic strength in the semiconductor structure 120. The fifth point P5 may be an ionic strength at a point where the semiconductor structure 120 contacts the electrode. Here, the electrode may correspond to a second electrode to be described later.

According to the embodiment, since the semiconductor structure 120 has an AlGaN composition on the surface of the semiconductor structure 120, the absorption rate of ultraviolet light may be reduced to improve light extraction efficiency, and the resistance between the second electrode and the fifth point P5 may be lowered. It is possible to improve the optical and electrical properties of. The second point P2 may be the maximum ionic strength of the second conductivity type semiconductor region, and the fifth point P5 may be the minimum ionic strength of the second conductivity type semiconductor region.

The eighth point P8 may be a point in which the intensity of the secondary ionic strength of aluminum is the lowest within the region located between the second point P2 and the first point P1. That is, at the eighth point P8, the intensity of the secondary ionic strength of aluminum is controlled to be low within a range in which the crystallinity of the semiconductor structure is not deteriorated, so that the current injection efficiency through the eighth point P8 may be improved. In other words, ohmic contact can be improved. In addition, at the eighth point P8, the intensity of the aluminum secondary ions is controlled to be low, so that the stress between the valleys P82 having less aluminum than the peak P81, which will be described later, can be relaxed.

In addition, since the eighth point P8 is sufficiently low, resistance with the first electrode is lowered, so that the injection efficiency of the current injected into the semiconductor structure 120 can be improved. For this reason, the eighth point P8 may be disposed lowest in the second direction D2 from the third point P3.

In addition, the eighth point P8 may have a uniform ionic strength in a region between the third point P3 and the ninth point P9. Accordingly, the density of the current injected into the active region can be uniform.

The ninth point P9 may have the highest aluminum secondary ionic strength in a region between the first point P1 and the eighth point P3. In addition, the ninth point P9 may have an aluminum secondary ionic strength smaller than the first point P1, the second point P2, and the third point P3. In addition, the ninth point P9 may have an aluminum secondary ionic strength higher than the eighth point P8 and the fifth point P5.

Also, a region between the first point P1 and the eighth point P8 may have the ninth point P9 relatively uniformly. Accordingly, it is possible to improve the spreading effect of the carrier for injection into the active region in the region between the first point P1 and the eighth point P8.

The aluminum secondary ionic strength emitted from the first conductivity type semiconductor region may have third and ninth ionic strengths P3 and P9. In this case, the eighth point P8 may be the minimum ionic strength (second minimum strength) of the first conductivity type semiconductor region. Also, the eighth point P8 may be a point in which the ionic strength of aluminum is lowest in the second direction D2 from the third point P3. The second direction D2 may be a direction away from the surface E0 of the semiconductor structure 120 in a direction opposite to the first direction D1 as described above.

In addition, each point in the semiconductor structure 120 may be defined based on a sixth point G0 having the lowest secondary ion strength of gallium and a seventh point G1 having the highest secondary ion strength of gallium. In this case, the twelfth point G0 may be spaced apart from the seventh point G1 in the second direction D2. In addition, the twelfth point G0 is a point excluding the above-described noise region, and may be a point that is 1/10 times to 1/100 times the ionic strength at the seventh point G1. The seventh point G1 may be located adjacent to the surface. In addition, the gallium secondary ionic strength may complementarily correspond to the aluminum ionic strength.

The sixth point G4 may be a point having the highest gallium ion strength in a region separated from the fourth point P4 in the second direction D2. In addition, the sixth point G4 may have the highest ionic strength in a region separated from the eleventh point G3 in the second direction D2. The sixth point G4 may be a point in which the ionic strength of gallium has an effective value. That is, the sixth point G4 may be located in the substrate area. Further, the sixth point G4 may have the highest ionic strength in a region separated from the ninth point P9 in the second direction D2.

That is, the ionic strength of gallium at the sixth point G4 and the ionic strength of aluminum at the same depth as the sixth point G4 may be highest within a region from the point to the second direction D2. . In other words, in consideration of noise, a region separated from the sixth point G4 in the second direction D2 may have a region in which the ionic strength of aluminum and the ionic strength of Ga decrease.

In this case, the substrate region may be distinguished from the first conductivity type semiconductor region based on the point H1 at which the first dopant has an effective value. In addition, the aluminum ion strength may increase from the point H1 where the first dopant has an effective value to the first point P1. Accordingly, since the aluminum ion strength does not increase in the first direction D1 from the first point P1 to the point H1 where the first dopant has an effective value, crystallinity in the semiconductor structure may be improved. In addition, the substrate region may be made of AlN. Therefore, in the semiconductor device, the aluminum ion strength can be detected highest in the AlN buffer layer.

In addition, the substrate region may include an aluminum protrusion region APR. The aluminum protrusion area APR may be located between the sixth point G4 and the fourth point P4. In addition, in the semiconductor device according to the embodiment, the concentration of carbon ions may have a first concentration point C1 having the highest concentration in a region spaced from the eighth point P8 in the second direction D2. More specifically, the first concentration point C1 may be located in the aluminum protrusion area APR. That is, the first concentration point C1 may be located on an area located between the fourth point P4 and the sixth point G4. Accordingly, the first concentration point C1 may be located in the second direction D2 from the point H1 in which the above-described first dopant has an effective value.

With this configuration, the substrate region is a region located under the semiconductor structure and may have air voids to relieve physical stress such as stress. In addition, as the density of air voids increases in the substrate region, the concentration of carbon located in the air voids may also increase. Accordingly, the substrate region has a high concentration below the first conductivity type semiconductor region, such as the first concentration point C1, thereby reducing cracks by changing the morphology of the substrate region, and reducing light due to air voids. The light extraction efficiency can also be improved by reflection.

Furthermore, the first concentration point C1 may be positioned in a region between the twelfth point G0 and the fourth point P4 positioned in the substrate region. Also, the first concentration point C1 may be located in a region between the fourth point P5 and the sixth point G4. In other words, the substrate region may include the first concentration point C1.

The tenth point G2 may have the highest ionic strength in a region separated from the seventh point G1 in the second direction D2. The tenth point G2 may be located in a partial region of the first conductivity type semiconductor region. By arranging the distance between the thirteenth point G13 and the seventh point G1 smaller than the distance between the tenth point G2 and the twelfth point G5, light absorption can be minimized and light extraction efficiency can be improved. . In addition, since the tenth point G2 has the highest ionic strength in a region separated from the seventh point G1 in the second direction D2, it is possible to improve current spreading by reducing resistance when contacting the electrode. have.

The eleventh point G3 may have the highest ionic strength in a region separated from the tenth point G2 in the second direction D2. The tenth point G2 may be located in a partial region of the first conductivity type semiconductor region.

In addition, the eleventh point G3 may be lower than the tenth point G2. Accordingly, a difference in lattice constant between the tenth point G2 and the active region can be reduced to relieve strain.

The thirteenth point G5 may have the lowest ionic strength in a region between the eleventh point G3 and the sixth point G4. The thirteenth point G5 may be a point having the lowest ionic strength of gallium in a region spaced apart from the sixth point G4 in the first direction D1. Accordingly, the thirteenth point G5 may improve light transmission.

The fourteenth point G6 may be a point in which the ionic strength of gallium is lowest in the region between the seventh point G1 and the tenth point G2. The fourteenth point G6 may be lower than the sixteenth point G8, the tenth point G2, the sixth point G8, and the eleventh point G3. In addition, the fourteenth point G6 may be higher than the eleventh point G5.

The fifteenth point G7 may be a point in which the ionic strength of gallium is highest in the region between the fourteenth point G6 and the tenth point G2.

The sixteenth point G8 may be a point in which the ionic strength of gallium is lowest in the region between the fifteenth point G7 and the tenth point G2. The sixteenth point G8 may be located in the active area and may be lower than the tenth point G2. However, at the sixteenth point G8, the difference in ionic strength between the tenth points G2 may be smaller than the difference in ionic strength between the eleventh points G3. Accordingly, stress due to strain between the first conductivity type semiconductor region and the active region may be reduced.

In addition, the doping concentration of the first dopant (eg, Si) may have a first doping concentration S1 in the first conductivity type semiconductor region. In this case, the first doping concentration S1 may be a point where the doping concentration is the highest in the semiconductor device except for the doping concentration of the surface region (a third doping concentration to be described later).

In this case, the first conductivity type semiconductor region may have a doping concentration S2 lower than the first doping concentration S1 in some regions. However, the present invention is not limited thereto, and the doping concentration may be uniform in the entire region of the first conductivity type semiconductor region.

The second doping concentration S2 may be a doping concentration of a partial region of the first conductivity type semiconductor region. The second doping concentration S2 may be a doping concentration of the second sub-semiconductor region. Accordingly, the injection efficiency of the first carrier injected into the active region may be improved, and the efficiency in which the first carrier and the second carrier are recombined in light emission in the active region may be improved. In addition, it is possible to lower the operating voltage Vf.

The third doping concentration S6 may be a doping concentration in the surface E0 of the semiconductor structure 120. The third doping concentration S6 may be higher than the first doping concentration S1 and the second doping concentration S4. Accordingly, in the semiconductor structure 120 according to the exemplary embodiment, it can be confirmed that the surface area on which the second electrode is disposed includes aluminum and the first dopant.

The fourth doping concentration S3 may be disposed closest to the active region in the first conductivity type semiconductor region. The fourth doping concentration S3 may be smaller than the second doping concentration S2. Accordingly, the semiconductor region having the fourth doping concentration S3 may have a relatively high resistance, thereby distributing current. In addition, since the semiconductor region having the fourth doping concentration S3 is adjacent to the active region in the first conductivity type semiconductor region, it is possible to improve light extraction efficiency by improving crystallinity between the active regions. In addition, it may be a result of a change in growth conditions to a change as the active region is grown on the first conductivity type semiconductor region.

The fifth doping concentration S5 may have the lowest doping concentration in a region separated from the fourth doping concentration S3 in the first direction D1. In addition, the fifth doping concentration S5 may be disposed between the active region and the second conductivity type semiconductor region. That is, the fifth doping concentration S5 may be formed in the process of suppressing the first dopant for doping with the second dopant. The fourth doping concentration S3 and the fifth doping concentration S5 may be smaller than the first doping concentration S1, the second doping concentration S2, and the third doping concentration.

The sixth doping concentration S4 may have the highest doping concentration between the fifth doping concentration S5 and the fourth doping concentration S3. The sixth doping concentration S4 may be disposed in a partial region of the active region. In addition, the sixth doping concentration S4 may be higher than the second doping concentration S2 to maintain crystallinity. Accordingly, the doping concentration of the first dopant may rapidly increase in a region adjacent to the first conductivity type semiconductor region in the active region.

5 to 7, a ratio L1 between the first point P1 and the fifth point P5 may be 1:0.3 to 1:0.5. When the ratio is greater than or equal to 1:0.3, the intensity of aluminum at the fifth point P5 is increased, so that the problem of absorbing light may be improved. In addition, when the ratio is lower than 1:0.5, the contact resistance with the second electrode may be lowered.

The ratio L2 of the second point P2 and the fifth point P5 may be 1:0.42 to 1:0.85. When the ratio between the fifth point P5 and the second point P2 is 1:0.42 or more, the aluminum strength of the fifth point P5 may be increased. Therefore, it is possible to improve the problem of absorbing light in the surface area. In addition, when the ratio is lower than 1:0.85, the strength of the fifth point P5 is sufficiently lowered, so that the contact resistance with the second electrode may be lowered.

The ratio L3 of the second point P2 and the first point P1 may be 1:1.1 to 1:1.9. When the ratio between the second point P2 and the first point P1 is 1:1.1 or higher, it is easy to block the movement of the carrier, and the ratio between the second point P2 and the first point P1 is 1:1.9 In the following cases, the strain may be reduced to reduce stress, improve crystallinity, and improve carrier mobility (eg, hole mobility).

The ratio L4 of the eighth point P8 and the third point P3 may be 1:1.2 to 1:2.5. When the ratio between the eighth point P8 and the third point P3 is 1:1.2 or higher, the resistance between the eighth point P8 and the first electrode may be lowered. In addition, when the ratio between the eighth point P8 and the third point P3 is 1:2.5 or less, the eighth point P8 rises to reduce the absorption rate of light in the ultraviolet wavelength band.

The ratio L5 of the third point P3 and the second point P2 may be 1:1.1 to 1:2. When the ratio between the third point P3 and the second point P2 is 1:1.1 or higher, the second point P2 is increased to effectively block the first carrier from passing through the active area. In addition, when the ratio between the third point P3 and the second point P2 is 1:2 or less, it is possible to achieve a balance between the concentration of the first carrier and the concentration of the second carrier that are injected into the active region and undergo luminescent recombination. Therefore, the amount of light emitted by the semiconductor device can be improved.

The ratio L6 between the ninth point P9 and the first point P1 may be 1:1.2 to 1:1.8. When the ratio between the ninth point P9 and the first point P1 is 1:1.2 or more, the aluminum composition is gradually reduced to the active region to improve crystallinity in the first conductivity type semiconductor region, thereby improving crystallinity. . In addition, when the ratio between the ninth point (P9) and the first point (P1) is 1:1.8 or less, the difference in the aluminum ionic strength between the eighth point (P8) and the ninth point (P9) decreases, resulting in a strain between the points. Can be reduced.

The ratio L7 of the fifth point P5 and the eighth point P8 may be 1:1.1 to 1:1.8. When the ratio between the fifth point P5 and the eighth point P8 is 1:1.1 to 1:1.8, the contact resistance between the first electrode and the second electrode and the semiconductor structure is lowered to ensure carrier implantation efficiency while securing sufficient ionic strength. By securing, it is possible to reduce the light absorption rate in the ultraviolet wavelength band.

In addition, a difference in ionic strength between the eighth point P8 and the fifth point P5 may be smaller than a difference in ionic strength between the first point P1 and the eighth point P8. Here, the difference in ionic strength means a difference value between the ionic strengths at the corresponding points. For example, the difference in ionic strength between the eighth point P8 and the fifth point P5 means the magnitude of the ionic strength obtained by subtracting (subtracting) the fifth point P5 from the eighth point P8. With this configuration, the semiconductor structure is not deteriorated in crystalline quality due to the eighth point P8, and resistance with the first electrode is lowered, so that the semiconductor current injection efficiency can be improved.

Referring to FIG. 8, the doping concentration of the second dopant (eg, Mg) is highest at the surface E0, and may gradually decrease as the distance from the surface increases. It can be seen that the doping concentration M1 of the second dopant (eg, Mg) on the surface E0 of the semiconductor structure 120 is higher than the third doping concentration S6 of the first dopant (eg, Si). This may be because the doping concentration of the second dopant increases due to the memory effect even though the surface of the semiconductor structure 120 is not doped with the second dopant.

The second dopant may include a region (a region between M2 and M3) in which a doping concentration decreases as the second dopant is closer to the surface, but in a certain section, the doping concentration decreases as the second dopant is closer to the surface. According to this reversal section, since the concentration of the second dopant decreases and the resistance increases, the dispersion efficiency of holes can be improved.

The second dopant may be present in all regions of the second conductivity type semiconductor region and part of the active region, but is not limited thereto. The second dopant may be disposed only in the second conductivity type semiconductor region, but may diffuse to the active region. Accordingly, the injection efficiency of the second dopant injected into the active region may be improved. However, when the second dopant is diffused to the first conductivity type semiconductor region, leakage current of the semiconductor device and/or non-emission recombination of the first and second carriers may occur, thereby reducing the reliability and/or luminous efficiency of the semiconductor device. .

9A and 9B are conceptual diagrams of a semiconductor device according to an embodiment of the present invention.

9A and 9B, a semiconductor device according to an embodiment includes a semiconductor structure 120 including a first conductivity type semiconductor layer 124, a second conductivity type semiconductor layer 127, and an active layer 126, A first electrode pad 191 electrically connected to the first conductivity type semiconductor layer 124 and a second electrode pad 192 electrically connected to the second conductivity type semiconductor layer 127 may be included. Additionally, the semiconductor device includes a first ohmic electrode 141 electrically connected to the first conductivity type semiconductor layer 124, a second ohmic electrode 142 electrically connected to the second conductivity type semiconductor layer 127, and A first electrode 151 electrically connected to the first ohmic electrode 141 and a second electrode 152 electrically connected to the second ohmic electrode 142 may be further included.

The substrate 110 may be formed of a material selected from among sapphire (Al2O3), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, but is not limited thereto.

The semiconductor structure 120 may include a second conductivity type semiconductor layer 127 and a recess 128 disposed through the active layer 126 to a partial region of the first conductivity type semiconductor layer 124. In addition, the semiconductor structure 120 may include all of the semiconductor structure according to the first embodiment, the semiconductor structure according to the second embodiment, and the semiconductor structure according to the third embodiment, and any one of them may be applied. I can.

In addition, the first insulating layer 131 and the second insulating layer 132 may be formed on the side surface of the semiconductor structure 120 and on the recess 128. In this case, the first insulating layer 131 may expose a part of the second conductivity type semiconductor layer 127. Also, the second insulating layer 132 may be partially exposed. The first insulating layer 132 and the second insulating layer 132 include a hole, and a first ohmic electrode (or first electrode) and a second ohmic electrode (or second electrode) are disposed in the holes, respectively. I can.

The first insulating layer 132 and the second insulating layer 132 may be formed by selecting at least one from the group consisting of SiO2, SixOy, Si3N4, SixNy, SiOxNy, Al2O3, TiO2, AlN, etc., but is not limited thereto. . The insulating layer 131 may be a distributed Bragg reflector (DBR) having a multilayer structure including a silver Si oxide or a Ti compound. However, the present invention is not limited thereto, and the insulating layer 131 may include various reflective structures.

When the first insulating layer 131 and the second insulating layer 132 perform a reflective function, light emitted from the active layer 126 toward the side is reflected upward to improve light extraction efficiency. In this case, as the number of recesses increases, the light extraction efficiency may be more effective.

The first ohmic electrode 141 may be disposed on the first conductivity type semiconductor layer 124, and the second ohmic electrode 142 may be disposed on the second conductivity type semiconductor layer 127.

The first ohmic electrode 141 and the second ohmic electrode 142 are ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium). zinc oxide), IGTO(indium gallium tin oxide), AZO(aluminum zinc oxide), ATO(antimony tin oxide), GZO(gallium zinc oxide), IZON(IZO Nitride), AGZO(Al-Ga ZnO), IGZO(In -Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, or Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, It may be formed by including at least one of In, Ru, Mg, Zn, Pt, Au, and Hf, but is not limited to these materials. For example, the first ohmic electrode 141 may have a plurality of metal layers (eg, Cr/Al/Ni), and the second ohmic electrode 142 may be ITO.

The first electrode 151 may be disposed on the first ohmic electrode 141 to cover the first ohmic electrode 141. That is, the first electrode 151 may cover the side surface of the first ohmic electrode 141, but is not limited to this configuration.

In addition, the first electrode 151 may be electrically connected to the first ohmic electrode 141 through a first hole to form an electrical channel with the first conductivity type semiconductor layer 124. In addition, the first electrode 151 may extend above the first insulating layer 171. Accordingly, the first electrode 151 may be positioned on a portion of the first insulating layer 171. Due to this configuration, since the total area of the first electrode 151 is increased, the operating voltage of the semiconductor device according to the embodiment may be lowered.

The second electrode 152 may be disposed on the second ohmic electrode 142 to cover the second ohmic electrode 142. In addition, the second electrode 152 may cover a side surface of the second ohmic electrode 142, but is not limited thereto.

In addition, the second electrode 152 may be electrically connected to the second electrode 152 through the second hole. Accordingly, the second electrode 152 may form an electrical channel with the second ohmic electrode 142 and the second conductivity type semiconductor layer 127 electrically. And, for example, the second electrode 152 may be disposed only on the second ohmic electrode 142.

The first electrode 151 and the second electrode 152 are Ni/Al/Au, or Ni/IrOx/Au, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg , Zn, Pt, Au, and may be formed to include at least one of Hf, but is not particularly limited. However, in the first electrode 151 and the second electrode 152, the outermost layer exposed to the outside may include gold (Au). Gold (Au) prevents corrosion of the electrode and improves electrical conductivity to facilitate electrical connection with the pad.

The first electrode pad 191 may be electrically connected to the first conductivity type semiconductor layer 124. Specifically, the first electrode pad 191 may be electrically connected to the first conductivity type semiconductor layer 124 through the recess 128. Although not shown, a first electrode may be disposed between the first electrode pad 191 and the first conductivity type semiconductor layer 124.

The second electrode pad 192 may be electrically connected to the second conductivity type semiconductor layer 127. Specifically, the second electrode pad 192 may pass through the insulating layer 131 and be electrically connected to the second electrode 152.

Also, the first electrode pad 191 and the second electrode pad 192 may be disposed to face each other on the semiconductor structure 120. In an embodiment, the first electrode pad 191 and the second electrode pad 192 may be spaced apart from each other in one direction on a plane.

In addition, in the present invention, the semiconductor device may have a structure of a general horizontal type semiconductor device. In addition, the semiconductor device according to the embodiment may be equally applied to various structures such as a vertical type other than the above-described structure.

10 is a conceptual diagram of a semiconductor device package according to an embodiment of the present invention.

Referring to FIG. 10, the semiconductor device package includes a body 2 in which a groove 3 is formed, a semiconductor device 10 disposed in the body 2, and a semiconductor device 10 disposed in the body 2 to be electrically connected to the semiconductor device 10. It may include a pair of lead frames 5a and 5b to be connected. The semiconductor device 10 may include all of the above-described configurations.

The body 2 may include a material or a coating layer that reflects ultraviolet light. The body 2 may be formed by stacking a plurality of layers 2a, 2b, 2c, 2d, 2e. The plurality of layers 2a, 2b, 2c, 2d, 2e may be of the same material or may include different materials.

The groove 3 may be formed to become wider as it moves away from the semiconductor device, and a step 3a may be formed on the inclined surface.

The light-transmitting layer 4 may cover the groove 3. The light-transmitting layer 4 is made of a glass material, but is not limited thereto. The light-transmitting layer 4 is not particularly limited as long as it is a material capable of effectively transmitting ultraviolet light. The inside of the groove 3 may be an empty space.

The semiconductor device can be applied to various types of light source devices. For example, the light source device may be a concept including a sterilization device, a curing device, a lighting device, and a display device and a vehicle lamp. That is, the semiconductor device can be applied to various electronic devices that are disposed in a case to provide light.

The sterilization device may sterilize a desired area by providing the semiconductor device according to the embodiment. The sterilization device may be applied to household appliances such as water purifiers, air conditioners, and refrigerators, but is not limited thereto. That is, the sterilization device can be applied to all of a variety of products (eg, medical devices) requiring sterilization.

Exemplarily, the water purifier may have a sterilization device according to the embodiment to sterilize the circulating water. The sterilization device may be disposed at a nozzle or discharge port through which water circulates to irradiate ultraviolet rays. In this case, the sterilization device may include a waterproof structure.

The curing apparatus may cure various types of liquids by including the semiconductor device according to the embodiment. Liquid may be the broadest concept including all of the various materials that are cured when irradiated with ultraviolet rays. Exemplarily, the curing device can cure various types of resins. Alternatively, the curing device may be applied to cure cosmetic products such as manicure.

The lighting device may include a light source module including a substrate and the semiconductor device of the embodiment, a heat dissipation unit for dissipating heat from the light source module, and a power supply unit for processing or converting an electrical signal provided from the outside to provide the light source module. In addition, the lighting device may include a lamp, a head lamp, or a street light.

The display device may include a bottom cover, a reflector, a light emitting module, a light guide plate, an optical sheet, a display panel, an image signal output circuit, and a color filter. The bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may constitute a backlight unit.

The reflector is disposed on the bottom cover, and the light emitting module may emit light. The light guide plate is disposed in front of the reflective plate to guide light emitted from the light emitting module to the front, and the optical sheet may include a prism sheet and the like, and may be disposed in front of the light guide plate. A display panel is disposed in front of the optical sheet, an image signal output circuit supplies an image signal to the display panel, and a color filter may be disposed in front of the display panel.

When the semiconductor device is used as a backlight unit of a display device, it may be used as an edge type backlight unit or a direct type backlight unit.

In addition to the above-described light emitting diode, the semiconductor device may be a laser diode.

Like the light emitting device, the laser diode may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer having the above-described structure. In addition, the p-type first conductivity type semiconductor and the n-type second conductivity type semiconductor are bonded to each other and use the electro-luminescence phenomenon in which light is emitted when current is passed, but the direction of the emitted light There are differences in and phase. That is, in the laser diode, light having one specific wavelength (monochrome light, monochromatic beam) can be emitted in the same direction with the same phase by using a phenomenon called stimulated emission and constructive interference. Due to this, it can be used for optical communication, medical equipment, and semiconductor processing equipment.

As an example of the light-receiving element, a photodetector, which is a kind of transducer that detects light and converts its intensity into an electric signal, is exemplified. As such photodetectors, photovoltaic cells (silicon, selenium), photoelectric devices (cadmium sulfide, cadmium selenide), photodiodes (e.g., PDs with peak wavelengths in visible or true blind spectral regions), photoelectric devices Transistors, photomultiplier tubes, photoelectric tubes (vacuum, gas encapsulated), IR (Infra-Red) detectors, and the like, but embodiments are not limited thereto.

In addition, semiconductor devices such as photodetectors may be generally manufactured using a direct bandgap semiconductor having excellent light conversion efficiency. Alternatively, photodetectors have various structures, and the most common structures include a pin-type photodetector using a pn junction, a Schottky photodetector using a Schottky junction, and a metal semiconductor metal (MSM) photodetector. have.

The photodiode may include a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer having the above-described structure, and is formed of a pn junction or a pin structure. The photodiode operates by applying a reverse bias or a zero bias, and when light is incident on the photodiode, electrons and holes are generated and a current flows. In this case, the magnitude of the current may be substantially proportional to the intensity of light incident on the photodiode.

A photovoltaic cell or a solar cell is a type of photodiode and can convert light into electric current. The solar cell may include a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer having the above-described structure, similarly to the light emitting device.

In addition, it may be used as a rectifier of an electronic circuit through the rectification characteristic of a general diode using a p-n junction, and may be applied to an ultra-high frequency circuit and applied to an oscillation circuit.

In addition, the above-described semiconductor device is not necessarily implemented only as a semiconductor, and may further include a metallic material in some cases. For example, a semiconductor device such as a light receiving device may be implemented using at least one of Ag, Al, Au, In, Ga, N, Zn, Se, P, or As, and may be implemented by a p-type or n-type dopant. It may be implemented using a doped semiconductor material or an intrinsic semiconductor material.

Although the embodiments have been described above, these are only examples and do not limit the present invention, and those of ordinary skill in the field to which the present invention belongs are not exemplified above without departing from the essential characteristics of the present embodiment. It will be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified and implemented. And differences related to these modifications and applications should be construed as being included in the scope of the present invention defined in the appended claims.

Claims (15)

A substrate area; And
A semiconductor structure disposed on the substrate region and including a first conductivity type semiconductor region including aluminum, an active region including aluminum, and a second conductivity type semiconductor region including aluminum,
The semiconductor structure emits secondary ions including aluminum secondary ions, gallium secondary ions, carbon secondary ions, first dopant secondary ions, and second dopant secondary ions upon primary ion collision,
The strength of the aluminum secondary ions is,
A first point having the greatest ionic strength in the semiconductor structure;
A second largest point in an area spaced apart from the first point;
A third point having the greatest ionic strength in a region located between the second point and the first point;
A fourth point having the same ionic strength as the third point in a region located between the first point and the third point; And
Consisting of a fifth point having the lowest ionic strength in a region spaced apart from a fourth point in a first direction, which is a direction from the first point to the second point,
The strength of the gallium secondary ion is,
And a sixth point having the highest ionic strength in a region spaced from the fourth point in a second direction, which is a direction from the second point to the first point,
The first conductivity type semiconductor region includes a first region between the fourth point and the third point in the first direction,
The second conductivity type semiconductor region includes a second region between the second point and the fifth point in the first direction,
The active region includes a third region between the second point and the third point,
The substrate region includes an aluminum protruding region between the sixth point and the fourth point,
The concentration of the carbon secondary ion is,
Consisting of a first concentration point having the highest concentration in a region spaced from the fifth point in the second direction,
The first concentration point is a semiconductor device located in the aluminum protrusion region.
The method of claim 1,
The intensity of the gallium secondary ion includes a seventh point having the highest ionic strength in the first direction from the sixth point; and
The first concentration point, the first point, and the fourth point are located in a region spaced apart from the seventh point in the second direction.
The method of claim 2,
The strength of the aluminum secondary ions is,
An eighth point having the lowest ionic strength in a region located between the first point and the second point; And
A ninth point having the greatest ionic strength in a region located between the third point and the fourth point;
The second point is higher than the third point, the fourth point, and the ninth point,
The third point is higher than the eighth point,
The eighth point is higher than the fifth point.
The method of claim 2,
The first point is a semiconductor device positioned between the fourth point and the sixth point.
The method of claim 1,
The aluminum secondary ionic strength emitted from the active region includes a plurality of peaks and a plurality of valleys,
The plurality of peaks have an ionic strength lower than the first point and the second point.
The method of claim 1,
The secondary ions further include secondary ions of the first dopant,
The first dopant includes silicon,
The doping concentration of the secondary ions of the first dopant is,
A first doping concentration emitted from the first conductivity type semiconductor region and having the highest concentration;
A second doping concentration emitted from the first conductivity type semiconductor region and lower than the first doping concentration;
A third doping concentration having the highest concentration in a region spaced apart from the first doping concentration in the first direction;
A fourth doping concentration having the lowest concentration in a region between the third doping concentration and the first doping concentration;
A fifth doping concentration having the lowest concentration in a region spaced apart from the fourth doping concentration in the first direction; And
A semiconductor device comprising: a sixth doping concentration having the highest concentration in a region between the fourth doping concentration and the fifth doping concentration.
The method of claim 6,
The second doping concentration is lower than the first doping concentration, the third doping concentration, and the sixth doping concentration.
The method of claim 6,
The fourth doping concentration is released in the active region,
The sixth doping concentration is emitted from the second conductivity type semiconductor region.
The method of claim 1,
The active region,
Well area; And a barrier region,
The third point is emitted from a barrier region located at the outermost side in the second direction.
The method of claim 1
The ratio of the first point and the fifth point is 1:0.3 to 1:0.45.
The method of claim 1,
The ratio of the second point and the fifth point is 1:0.42 to 1:0.85.
The method of claim 1,
A semiconductor device having a ratio of the second point and the first point of 1:1.1 to 1:1.9.
The method of claim 1,
The primary ion is a semiconductor device including any one of O2+, Cs+, and Bi+.
The method of claim 1,
The semiconductor structure further includes a substrate region including aluminum,
The substrate region includes a region between the first point and the fourth point.
The method of claim 1,
The first concentration point is located between the third point and the first point.

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