CN107799639B - 半导体器件及包括其的半导体器件封装 - Google Patents

半导体器件及包括其的半导体器件封装 Download PDF

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CN107799639B
CN107799639B CN201710780660.XA CN201710780660A CN107799639B CN 107799639 B CN107799639 B CN 107799639B CN 201710780660 A CN201710780660 A CN 201710780660A CN 107799639 B CN107799639 B CN 107799639B
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type semiconductor
semiconductor layer
layer
conductive type
semiconductor device
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CN107799639A (zh
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吴炫智
崔洛俊
金炳祚
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Suzhou Liyu Semiconductor Co ltd
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Suzhou Lekin Semiconductor Co Ltd
LG Innotek Co Ltd
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Priority claimed from KR1020160112809A external-priority patent/KR102582184B1/ko
Priority claimed from KR1020160163830A external-priority patent/KR102619743B1/ko
Application filed by Suzhou Lekin Semiconductor Co Ltd, LG Innotek Co Ltd filed Critical Suzhou Lekin Semiconductor Co Ltd
Priority to CN202210482686.7A priority Critical patent/CN114864772B/zh
Publication of CN107799639A publication Critical patent/CN107799639A/zh
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    • H10H20/80—Constructional details
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    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
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    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
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CN201710780660.XA 2016-09-01 2017-09-01 半导体器件及包括其的半导体器件封装 Active CN107799639B (zh)

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KR10-2016-0112809 2016-09-01
KR1020160112809A KR102582184B1 (ko) 2016-09-01 2016-09-01 반도체 소자 및 이를 포함하는 반도체 소자 패키지
KR1020160163830A KR102619743B1 (ko) 2016-12-02 2016-12-02 반도체 소자
KR10-2016-0163830 2016-12-02

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EP (2) EP3291314B1 (https=)
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KR102502335B1 (ko) 2018-04-04 2023-02-22 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
CN108933340A (zh) * 2018-05-25 2018-12-04 宁夏中科天际防雷研究院有限公司 一种抗腐蚀性防雷接地极及其制备方法
KR102575569B1 (ko) * 2018-08-13 2023-09-07 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
US10879419B2 (en) * 2018-08-17 2020-12-29 Seoul Viosys Co., Ltd. Light emitting device
KR102594206B1 (ko) * 2018-09-04 2023-10-26 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
KR102600336B1 (ko) * 2018-09-20 2023-11-09 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자
JP7262965B2 (ja) 2018-10-17 2023-04-24 スタンレー電気株式会社 半導体発光素子
CN111668697B (zh) * 2019-03-07 2023-04-18 旭化成株式会社 氮化物半导体元件
JP7388859B2 (ja) * 2019-09-27 2023-11-29 旭化成株式会社 窒化物半導体素子
US20230238419A1 (en) * 2021-01-21 2023-07-27 Photon Wave Co., Ltd. Ultraviolet light-emitting device
CN114883361A (zh) * 2022-06-06 2022-08-09 Tcl华星光电技术有限公司 显示面板及其制作方法

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