JP2017516914A5 - - Google Patents

Download PDF

Info

Publication number
JP2017516914A5
JP2017516914A5 JP2016561631A JP2016561631A JP2017516914A5 JP 2017516914 A5 JP2017516914 A5 JP 2017516914A5 JP 2016561631 A JP2016561631 A JP 2016561631A JP 2016561631 A JP2016561631 A JP 2016561631A JP 2017516914 A5 JP2017516914 A5 JP 2017516914A5
Authority
JP
Japan
Prior art keywords
layer
vapor deposition
physical vapor
deposition process
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016561631A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017516914A (ja
Filing date
Publication date
Priority claimed from US14/291,712 external-priority patent/US9746678B2/en
Application filed filed Critical
Publication of JP2017516914A publication Critical patent/JP2017516914A/ja
Publication of JP2017516914A5 publication Critical patent/JP2017516914A5/ja
Pending legal-status Critical Current

Links

JP2016561631A 2014-04-11 2015-03-24 光波分離格子および光波分離格子を形成する方法 Pending JP2017516914A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201461978803P 2014-04-11 2014-04-11
US61/978,803 2014-04-11
US14/291,712 US9746678B2 (en) 2014-04-11 2014-05-30 Light wave separation lattices and methods of forming light wave separation lattices
US14/291,712 2014-05-30
PCT/US2015/022119 WO2015156991A1 (en) 2014-04-11 2015-03-24 Light wave separation lattices and methods of forming light wave separation lattices

Publications (2)

Publication Number Publication Date
JP2017516914A JP2017516914A (ja) 2017-06-22
JP2017516914A5 true JP2017516914A5 (enExample) 2018-05-17

Family

ID=54264973

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016561631A Pending JP2017516914A (ja) 2014-04-11 2015-03-24 光波分離格子および光波分離格子を形成する方法

Country Status (7)

Country Link
US (2) US9746678B2 (enExample)
EP (1) EP3129823A4 (enExample)
JP (1) JP2017516914A (enExample)
CN (1) CN106170730A (enExample)
SG (2) SG10201809273VA (enExample)
TW (2) TWI667501B (enExample)
WO (1) WO2015156991A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108666328B (zh) * 2017-04-01 2020-05-05 奇景光电股份有限公司 影像感测器
US20200003937A1 (en) * 2018-06-29 2020-01-02 Applied Materials, Inc. Using flowable cvd to gap fill micro/nano structures for optical components
CN113767187A (zh) * 2019-04-19 2021-12-07 应用材料公司 形成含金属材料的方法
US20210319989A1 (en) * 2020-04-13 2021-10-14 Applied Materials, Inc. Methods and apparatus for processing a substrate
US12392945B2 (en) * 2020-04-28 2025-08-19 Viavi Solutions Inc. Induced transmission filter with hydrogenated silicon, silver, and silicon dioxide
US11935771B2 (en) 2021-02-17 2024-03-19 Applied Materials, Inc. Modular mainframe layout for supporting multiple semiconductor process modules or chambers
US11935770B2 (en) 2021-02-17 2024-03-19 Applied Materials, Inc. Modular mainframe layout for supporting multiple semiconductor process modules or chambers
US12338527B2 (en) * 2021-09-03 2025-06-24 Applied Materials, Inc. Shutter disk for physical vapor deposition (PVD) chamber

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS634066A (ja) * 1986-06-25 1988-01-09 Hitachi Ltd バイアススパツタ装置
JPH056986A (ja) * 1991-06-27 1993-01-14 Sharp Corp 固体撮像素子
JPH0818849B2 (ja) * 1991-08-29 1996-02-28 日本板硝子株式会社 熱線遮蔽ガラス
TW359849B (en) * 1994-12-08 1999-06-01 Tokyo Electron Ltd Sputtering apparatus having an on board service module
US6541164B1 (en) * 1997-10-22 2003-04-01 Applied Materials, Inc. Method for etching an anti-reflective coating
US6252218B1 (en) * 1999-02-02 2001-06-26 Agilent Technologies, Inc Amorphous silicon active pixel sensor with rectangular readout layer in a hexagonal grid layout
FR2793889B1 (fr) * 1999-05-20 2002-06-28 Saint Gobain Vitrage Substrat transparent a revetement anti-reflets
US6506289B2 (en) * 2000-08-07 2003-01-14 Symmorphix, Inc. Planar optical devices and methods for their manufacture
US6756161B2 (en) * 2002-04-16 2004-06-29 E. I. Du Pont De Nemours And Company Ion-beam deposition process for manufacture of binary photomask blanks
US6861280B2 (en) * 2002-10-25 2005-03-01 Omnivision International Holding Ltd Image sensor having micro-lenses with integrated color filter and method of making
US6818328B2 (en) 2003-02-20 2004-11-16 Fuji Electric Co., Ltd. Color conversion filter substrate, color conversion type multicolor organic EL display having the color conversion filter substrate, and methods of manufacturing these
JP2005045141A (ja) * 2003-07-25 2005-02-17 Mitsubishi Electric Corp 固体撮像装置
JP4450597B2 (ja) * 2003-09-24 2010-04-14 東京エレクトロン株式会社 マイクロレンズの形成方法
JP4638356B2 (ja) * 2004-01-15 2011-02-23 パナソニック株式会社 固体撮像装置、固体撮像装置の製造方法及びこれを用いたカメラ
US7901870B1 (en) * 2004-05-12 2011-03-08 Cirrex Systems Llc Adjusting optical properties of optical thin films
JP4510613B2 (ja) * 2004-12-28 2010-07-28 パナソニック株式会社 固体撮像装置の製造方法
US20060172536A1 (en) 2005-02-03 2006-08-03 Brown Karl M Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece
KR100672687B1 (ko) * 2005-06-03 2007-01-22 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
US7462560B2 (en) * 2005-08-11 2008-12-09 United Microelectronics Corp. Process of physical vapor depositing mirror layer with improved reflectivity
KR100790981B1 (ko) * 2006-02-13 2008-01-02 삼성전자주식회사 칼라필터, 칼라필터 어레이 및 그의 제조방법과 이미지센서
US8766385B2 (en) 2006-07-25 2014-07-01 Commissariat A L'energie Atomique Et Aux Energies Alternatives Filtering matrix structure, associated image sensor and 3D mapping device
FR2904432B1 (fr) * 2006-07-25 2008-10-24 Commissariat Energie Atomique Structure matricielle de filtrage optique et capteur d'images associe
CN101153933B (zh) * 2006-09-26 2011-08-17 奇美电子股份有限公司 彩色滤光基板及其制造方法、液晶显示面板与装置
CN101535177B (zh) * 2006-11-10 2012-06-13 住友电气工业株式会社 含有Si-O的氢化碳膜、具有该氢化碳膜的光学装置以及制备含有Si-O的氢化碳膜和光学装置的方法
KR100937654B1 (ko) * 2006-12-12 2010-01-19 동부일렉트로닉스 주식회사 이미지 센서 및 그 제조방법
JP5020258B2 (ja) * 2006-12-15 2012-09-05 株式会社Ａｄｅｋａ 光学フィルター
KR100823031B1 (ko) * 2006-12-21 2008-04-17 동부일렉트로닉스 주식회사 이미지 센서 제조방법
JP5252831B2 (ja) * 2007-05-14 2013-07-31 株式会社アルバック 誘電体多層膜フィルタの製造方法、及び、誘電体多層膜フィルタの製造装置
JP2009007636A (ja) * 2007-06-28 2009-01-15 Sony Corp 低屈折率膜及びその成膜方法、並びに反射防止膜
US20090032098A1 (en) * 2007-08-03 2009-02-05 Guardian Industries Corp. Photovoltaic device having multilayer antireflective layer supported by front substrate
US8893711B2 (en) * 2007-10-18 2014-11-25 Alliance For Sustainable Energy, Llc High temperature solar selective coatings
US20090201400A1 (en) * 2008-02-08 2009-08-13 Omnivision Technologies, Inc. Backside illuminated image sensor with global shutter and storage capacitor
US8101978B2 (en) * 2008-02-08 2012-01-24 Omnivision Technologies, Inc. Circuit and photo sensor overlap for backside illumination image sensor
JP5269454B2 (ja) * 2008-03-25 2013-08-21 株式会社東芝 固体撮像素子
JP2009251167A (ja) * 2008-04-03 2009-10-29 Panasonic Corp 誘電体多層膜
FR2935839B1 (fr) * 2008-09-05 2011-08-05 Commissariat Energie Atomique Capteur d'images cmos a reflexion lumineuse
US8330840B2 (en) 2009-08-06 2012-12-11 Aptina Imaging Corporation Image sensor with multilayer interference filters
KR101638183B1 (ko) 2009-08-11 2016-07-11 삼성전자주식회사 이미지 센서
US8338856B2 (en) 2010-08-10 2012-12-25 Omnivision Technologies, Inc. Backside illuminated image sensor with stressed film
FR2966976B1 (fr) * 2010-11-03 2016-07-29 Commissariat Energie Atomique Imageur monolithique multispectral visible et infrarouge
JP6076969B2 (ja) * 2011-06-17 2017-02-08 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ピンホールフリー誘電体薄膜製造
US8906454B2 (en) * 2011-09-12 2014-12-09 Applied Materials, Inc. Methods for depositing metal-polymer composite materials atop a substrate
JP2013062382A (ja) * 2011-09-13 2013-04-04 Toshiba Corp 半導体装置およびその製造方法
KR102072244B1 (ko) * 2011-11-30 2020-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
CN103378117B (zh) * 2012-04-25 2016-08-03 台湾积体电路制造股份有限公司 具有负电荷层的背照式图像传感器
US9412725B2 (en) * 2012-04-27 2016-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for image sensor packaging
KR20150023501A (ko) * 2012-07-04 2015-03-05 후지필름 가부시키가이샤 마이크로 렌즈의 제조 방법
CN102938410B (zh) * 2012-12-03 2017-06-23 上海集成电路研发中心有限公司 一种cmos图像传感器制造方法
CN103367381B (zh) * 2013-07-15 2016-12-28 格科微电子（上海）有限公司 背照式图像传感器及其制作方法

Similar Documents

Publication Publication Date Title
JP2017516914A5 (enExample)
JP2018190983A5 (enExample)
TWI625414B (zh) 用ｔｄｍａｔ或ｔｄｅａｔ透過ｐｅａｌｄ形成含鈦膜之方法
JP2019522113A5 (enExample)
JP6830992B2 (ja) 基板上に金属ホウ炭化物層を製造する方法
JP6920427B2 (ja) 複合膜の製造方法
JP2009545886A5 (enExample)
CN104884668B (zh) 用于切削工具的多层薄膜以及包含其的切削工具
RU2014134810A (ru) Емкостной преобразователь, полученный микрообработкой, и способ его изготовления
RU2012148385A (ru) Твердое углеродное покрытие и способ его формирования
JP2016197719A5 (enExample)
JP2012204652A (ja) 半導体装置の製造方法
GB2476884B (en) Erosion-and impact-resistant coatings
JP6842233B2 (ja) コーティングされた切削工具、及びコーティングされた切削工具の製造方法
JP2009505421A5 (enExample)
CN114223050B (zh) 图案化金属氧化物光刻胶的剂量减量
CN105143498A (zh) 铬基的氧化保护层
Dallorto et al. Atomic layer deposition for spacer defined double patterning of sub-10 nm titanium dioxide features
WO2018213295A1 (en) In-situ selective deposition and etching for advanced patterning applications
US20180050959A1 (en) Fabrication of nanostructures in and on organic and inorganic substrates using mediating layers
JP2016076688A (ja) 基板
CN109585417A (zh) 半导体装置
JP6356029B2 (ja) メタルハードマスクおよびその製造方法
JP5883505B2 (ja) 光学素子
WO2015163331A1 (ja) 被膜付きガラス基板および被膜付きガラス基板の製造方法