JP2017502491A5 - - Google Patents
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- JP2017502491A5 JP2017502491A5 JP2016521999A JP2016521999A JP2017502491A5 JP 2017502491 A5 JP2017502491 A5 JP 2017502491A5 JP 2016521999 A JP2016521999 A JP 2016521999A JP 2016521999 A JP2016521999 A JP 2016521999A JP 2017502491 A5 JP2017502491 A5 JP 2017502491A5
- Authority
- JP
- Japan
- Prior art keywords
- tin
- ammonium
- acid
- removal composition
- tiw
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000203 mixture Substances 0.000 claims description 40
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 16
- 239000002253 acid Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- -1 ammonium carboxylate Chemical class 0.000 claims description 11
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 9
- 229910001080 W alloy Inorganic materials 0.000 claims description 9
- DEFVIWRASFVYLL-UHFFFAOYSA-N ethylene glycol bis(2-aminoethyl)tetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)CCOCCOCCN(CC(O)=O)CC(O)=O DEFVIWRASFVYLL-UHFFFAOYSA-N 0.000 claims description 8
- 239000007800 oxidant agent Substances 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- KWIPUXXIFQQMKN-UHFFFAOYSA-N 2-azaniumyl-3-(4-cyanophenyl)propanoate Chemical compound OC(=O)C(N)CC1=CC=C(C#N)C=C1 KWIPUXXIFQQMKN-UHFFFAOYSA-N 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 4
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 claims description 4
- 239000005695 Ammonium acetate Substances 0.000 claims description 4
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 claims description 4
- 239000004251 Ammonium lactate Substances 0.000 claims description 4
- FTEDXVNDVHYDQW-UHFFFAOYSA-N BAPTA Chemical compound OC(=O)CN(CC(O)=O)C1=CC=CC=C1OCCOC1=CC=CC=C1N(CC(O)=O)CC(O)=O FTEDXVNDVHYDQW-UHFFFAOYSA-N 0.000 claims description 4
- FCKYPQBAHLOOJQ-UHFFFAOYSA-N Cyclohexane-1,2-diaminetetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)C1CCCCC1N(CC(O)=O)CC(O)=O FCKYPQBAHLOOJQ-UHFFFAOYSA-N 0.000 claims description 4
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 4
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 claims description 4
- 150000001413 amino acids Chemical class 0.000 claims description 4
- 229940043376 ammonium acetate Drugs 0.000 claims description 4
- 235000019257 ammonium acetate Nutrition 0.000 claims description 4
- 229940090948 ammonium benzoate Drugs 0.000 claims description 4
- BVCZEBOGSOYJJT-UHFFFAOYSA-N ammonium carbamate Chemical compound [NH4+].NC([O-])=O BVCZEBOGSOYJJT-UHFFFAOYSA-N 0.000 claims description 4
- 239000001099 ammonium carbonate Substances 0.000 claims description 4
- 235000012501 ammonium carbonate Nutrition 0.000 claims description 4
- 229940059265 ammonium lactate Drugs 0.000 claims description 4
- 235000019286 ammonium lactate Nutrition 0.000 claims description 4
- VBIXEXWLHSRNKB-UHFFFAOYSA-N ammonium oxalate Chemical compound [NH4+].[NH4+].[O-]C(=O)C([O-])=O VBIXEXWLHSRNKB-UHFFFAOYSA-N 0.000 claims description 4
- NHJPVZLSLOHJDM-UHFFFAOYSA-N azane;butanedioic acid Chemical compound [NH4+].[NH4+].[O-]C(=O)CCC([O-])=O NHJPVZLSLOHJDM-UHFFFAOYSA-N 0.000 claims description 4
- RZOBLYBZQXQGFY-HSHFZTNMSA-N azanium;(2r)-2-hydroxypropanoate Chemical compound [NH4+].C[C@@H](O)C([O-])=O RZOBLYBZQXQGFY-HSHFZTNMSA-N 0.000 claims description 4
- NGPGDYLVALNKEG-UHFFFAOYSA-N azanium;azane;2,3,4-trihydroxy-4-oxobutanoate Chemical compound [NH4+].[NH4+].[O-]C(=O)C(O)C(O)C([O-])=O NGPGDYLVALNKEG-UHFFFAOYSA-N 0.000 claims description 4
- KXDHJXZQYSOELW-UHFFFAOYSA-N carbonic acid monoamide Natural products NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 claims description 4
- KYQODXQIAJFKPH-UHFFFAOYSA-N diazanium;2-[2-[bis(carboxymethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical compound [NH4+].[NH4+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O KYQODXQIAJFKPH-UHFFFAOYSA-N 0.000 claims description 4
- 239000003989 dielectric material Substances 0.000 claims description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 4
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 claims description 4
- 229960003330 pentetic acid Drugs 0.000 claims description 4
- LESFYQKBUCDEQP-UHFFFAOYSA-N tetraazanium;2-[2-[bis(carboxylatomethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical compound N.N.N.N.OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O LESFYQKBUCDEQP-UHFFFAOYSA-N 0.000 claims description 4
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 claims description 4
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 2
- 235000019253 formic acid Nutrition 0.000 claims description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 8
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 8
- LFTLOKWAGJYHHR-UHFFFAOYSA-N N-methylmorpholine N-oxide Chemical compound CN1(=O)CCOCC1 LFTLOKWAGJYHHR-UHFFFAOYSA-N 0.000 description 6
- 229910020366 ClO 4 Inorganic materials 0.000 description 4
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 4
- PZZHMLOHNYWKIK-UHFFFAOYSA-N eddha Chemical compound C=1C=CC=C(O)C=1C(C(=O)O)NCCNC(C(O)=O)C1=CC=CC=C1O PZZHMLOHNYWKIK-UHFFFAOYSA-N 0.000 description 4
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 4
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 4
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 description 3
- GDDNTTHUKVNJRA-UHFFFAOYSA-N 3-bromo-3,3-difluoroprop-1-ene Chemical compound FC(F)(Br)C=C GDDNTTHUKVNJRA-UHFFFAOYSA-N 0.000 description 2
- 239000004342 Benzoyl peroxide Substances 0.000 description 2
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- WDLRUFUQRNWCPK-UHFFFAOYSA-N Tetraxetan Chemical compound OC(=O)CN1CCN(CC(O)=O)CCN(CC(O)=O)CCN(CC(O)=O)CC1 WDLRUFUQRNWCPK-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- KHPLPBHMTCTCHA-UHFFFAOYSA-N ammonium chlorate Chemical compound N.OCl(=O)=O KHPLPBHMTCTCHA-UHFFFAOYSA-N 0.000 description 2
- VZTDIZULWFCMLS-UHFFFAOYSA-N ammonium formate Chemical compound [NH4+].[O-]C=O VZTDIZULWFCMLS-UHFFFAOYSA-N 0.000 description 2
- 235000019395 ammonium persulphate Nutrition 0.000 description 2
- ZRDJERPXCFOFCP-UHFFFAOYSA-N azane;iodic acid Chemical compound [NH4+].[O-]I(=O)=O ZRDJERPXCFOFCP-UHFFFAOYSA-N 0.000 description 2
- YUUVAZCKXDQEIS-UHFFFAOYSA-N azanium;chlorite Chemical compound [NH4+].[O-]Cl=O YUUVAZCKXDQEIS-UHFFFAOYSA-N 0.000 description 2
- URGYLQKORWLZAQ-UHFFFAOYSA-N azanium;periodate Chemical compound [NH4+].[O-]I(=O)(=O)=O URGYLQKORWLZAQ-UHFFFAOYSA-N 0.000 description 2
- 235000019400 benzoyl peroxide Nutrition 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- RKKOMEIYHHASIN-UHFFFAOYSA-N hydroperoxyboronic acid Chemical compound OOB(O)O RKKOMEIYHHASIN-UHFFFAOYSA-N 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 2
- FDXKBUSUNHRUIZ-UHFFFAOYSA-M tetramethylazanium;chlorite Chemical compound [O-]Cl=O.C[N+](C)(C)C FDXKBUSUNHRUIZ-UHFFFAOYSA-M 0.000 description 2
- ZRVXFJFFJZFRLQ-UHFFFAOYSA-M tetramethylazanium;iodate Chemical compound [O-]I(=O)=O.C[N+](C)(C)C ZRVXFJFFJZFRLQ-UHFFFAOYSA-M 0.000 description 2
- ZCWKIFAQRXNZCH-UHFFFAOYSA-M tetramethylazanium;perchlorate Chemical compound C[N+](C)(C)C.[O-]Cl(=O)(=O)=O ZCWKIFAQRXNZCH-UHFFFAOYSA-M 0.000 description 2
- HLQAWDQQEJSALG-UHFFFAOYSA-M tetramethylazanium;periodate Chemical compound C[N+](C)(C)C.[O-]I(=O)(=O)=O HLQAWDQQEJSALG-UHFFFAOYSA-M 0.000 description 2
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910008599 TiW Inorganic materials 0.000 description 1
- AXJNNRSSILJLST-UHFFFAOYSA-N [Cl+].C[N+](C)(C)C Chemical compound [Cl+].C[N+](C)(C)C AXJNNRSSILJLST-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000006184 cosolvent Substances 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 125000000267 glycino group Chemical group [H]N([*])C([H])([H])C(=O)O[H] 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361889968P | 2013-10-11 | 2013-10-11 | |
| US61/889,968 | 2013-10-11 | ||
| PCT/US2013/074356 WO2015053800A2 (en) | 2013-10-11 | 2014-11-14 | Method and composition for selectively removing metal hardmask and other residues from semiconductor device substrates comprising low-k dielectric material and copper |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2017502491A JP2017502491A (ja) | 2017-01-19 |
| JP2017502491A5 true JP2017502491A5 (enExample) | 2017-12-28 |
Family
ID=52810036
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016522060A Active JP6523269B2 (ja) | 2013-10-11 | 2014-10-09 | ハードマスクを選択的に除去するための除去組成物 |
| JP2016521931A Pending JP2016535819A (ja) | 2013-10-11 | 2014-10-09 | ハードマスクを選択的に除去するための除去組成物及びその方法 |
| JP2016521999A Pending JP2017502491A (ja) | 2013-10-11 | 2014-11-14 | 低ｋ誘電材料及び銅を含む半導体デバイス基板から金属ハードマスク及びその他の残留物を選択的に除去するための方法及び組成物 |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016522060A Active JP6523269B2 (ja) | 2013-10-11 | 2014-10-09 | ハードマスクを選択的に除去するための除去組成物 |
| JP2016521931A Pending JP2016535819A (ja) | 2013-10-11 | 2014-10-09 | ハードマスクを選択的に除去するための除去組成物及びその方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (4) | US20150104952A1 (enExample) |
| JP (3) | JP6523269B2 (enExample) |
| KR (3) | KR102334603B1 (enExample) |
| CN (3) | CN105874562B (enExample) |
| TW (3) | TW201522574A (enExample) |
| WO (1) | WO2015053800A2 (enExample) |
Families Citing this family (47)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015116818A1 (en) * | 2014-01-29 | 2015-08-06 | Advanced Technology Materials, Inc. | Post chemical mechanical polishing formulations and method of use |
| JP6817186B6 (ja) * | 2014-07-15 | 2021-02-10 | ビーエイエスエフ・ソシエタス・エウロパエアＢａｓｆ Ｓｅ | 化学機械研磨（ｃｍｐ）組成物 |
| JP6486957B2 (ja) * | 2014-10-31 | 2019-03-20 | 富士フイルム株式会社 | Ｍｒａｍドライエッチング残渣除去組成物、磁気抵抗メモリの製造方法、及び、コバルト除去組成物 |
| US9976111B2 (en) | 2015-05-01 | 2018-05-22 | Versum Materials Us, Llc | TiN hard mask and etch residual removal |
| US10538846B2 (en) * | 2015-12-11 | 2020-01-21 | Dongwoo Fine-Chem Co., Ltd. | Etching solution composition for tungsten layer, method for preparing electronic device using the same and electronic device |
| JP6626748B2 (ja) * | 2016-03-09 | 2019-12-25 | 株式会社Adeka | タンタル含有層用エッチング液組成物及びエッチング方法 |
| WO2017167797A1 (en) * | 2016-03-29 | 2017-10-05 | Technic France | Solution and method for etching titanium based materials |
| US10577571B2 (en) * | 2016-11-08 | 2020-03-03 | Ecolab Usa Inc. | Non-aqueous cleaner for vegetable oil soils |
| KR102770063B1 (ko) * | 2016-11-29 | 2025-02-21 | 솔브레인 주식회사 | 식각용 조성물 및 식각용 조성물을 이용한 반도체 소자의 식각 방법 |
| US11035044B2 (en) * | 2017-01-23 | 2021-06-15 | Versum Materials Us, Llc | Etching solution for tungsten and GST films |
| CN110462799B (zh) * | 2017-03-31 | 2023-12-26 | 关东化学株式会社 | 钛层或含钛层的蚀刻液组合物及蚀刻方法 |
| CN107148156B (zh) * | 2017-05-08 | 2019-06-28 | 广东光华科技股份有限公司 | 3,6-二氧杂-1,8-辛二胺四乙酸衍生物的应用及osp处理液 |
| CN107357143B (zh) | 2017-07-25 | 2018-06-19 | 上海新阳半导体材料股份有限公司 | 一种清洗剂、其制备方法和应用 |
| CN107229193B (zh) * | 2017-07-25 | 2019-04-23 | 上海新阳半导体材料股份有限公司 | 一种清洗剂、其制备方法和应用 |
| US10870799B2 (en) * | 2017-08-25 | 2020-12-22 | Versum Materials Us, Llc | Etching solution for selectively removing tantalum nitride over titanium nitride during manufacture of a semiconductor device |
| US11390943B2 (en) | 2017-12-18 | 2022-07-19 | Entegris, Inc. | Chemical resistant multi-layer coatings applied by atomic layer deposition |
| US11499236B2 (en) | 2018-03-16 | 2022-11-15 | Versum Materials Us, Llc | Etching solution for tungsten word line recess |
| US11017995B2 (en) * | 2018-07-26 | 2021-05-25 | Versum Materials Us, Llc | Composition for TiN hard mask removal and etch residue cleaning |
| GB201813368D0 (en) | 2018-08-16 | 2018-10-03 | Lam Res Ag | Etchant composition |
| US11085011B2 (en) | 2018-08-28 | 2021-08-10 | Entegris, Inc. | Post CMP cleaning compositions for ceria particles |
| KR102665340B1 (ko) | 2018-09-18 | 2024-05-14 | 삼성전자주식회사 | 식각 조성물 및 이를 이용한 반도체 소자의 제조 방법 |
| KR102668574B1 (ko) * | 2019-03-06 | 2024-05-24 | 동우 화인켐 주식회사 | 식각 조성물 |
| JP7611857B2 (ja) | 2019-05-01 | 2025-01-10 | フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド | エッチング組成物 |
| EP3973565B1 (en) * | 2019-05-23 | 2023-07-19 | Basf Se | Composition and process for selectively etching a hard mask and/or an etch-stop layer in the presence of layers of low-k materials, copper, cobalt and/or tungsten |
| TWI900187B (zh) * | 2019-06-03 | 2025-10-01 | 美商富士軟片電子材料美國股份有限公司 | 蝕刻組成物 |
| EP3983500A4 (en) | 2019-06-13 | 2022-11-02 | FUJIFILM Electronic Materials U.S.A, Inc. | ETCHING COMPOSITIONS |
| CN110459468A (zh) * | 2019-08-29 | 2019-11-15 | 上海华力集成电路制造有限公司 | TiN薄膜的刻蚀方法 |
| KR102869325B1 (ko) * | 2019-09-10 | 2025-10-14 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 에칭 조성물 |
| EP3825441A1 (en) * | 2019-11-21 | 2021-05-26 | COVENTYA S.p.A. | An electrolytic treatment device for preparing plastic parts to be metallized and a method for etching plastic parts |
| CN113130292A (zh) * | 2019-12-31 | 2021-07-16 | 安集微电子科技（上海）股份有限公司 | 一种等离子体刻蚀残留物清洗液 |
| KR102877724B1 (ko) * | 2020-02-05 | 2025-10-29 | 삼성전자주식회사 | 식각 조성물 및 이를 이용한 반도체 소자의 제조 방법 |
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2014
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- 2014-10-09 JP JP2016522060A patent/JP6523269B2/ja active Active
- 2014-10-09 CN CN201480055153.4A patent/CN105874562B/zh active Active
- 2014-10-09 TW TW103135159A patent/TWI650415B/zh active
- 2014-10-09 TW TW103135158A patent/TWI650414B/zh active
- 2014-10-09 JP JP2016521931A patent/JP2016535819A/ja active Pending
- 2014-10-09 US US15/028,501 patent/US10155921B2/en active Active
- 2014-10-09 CN CN201480055151.5A patent/CN105612599B/zh active Active
- 2014-10-09 KR KR1020167012243A patent/KR102334603B1/ko active Active
- 2014-10-09 US US15/028,573 patent/US10005991B2/en active Active
- 2014-10-09 KR KR1020167012242A patent/KR102327432B1/ko active Active
- 2014-11-14 KR KR1020167012240A patent/KR20170076616A/ko not_active Withdrawn
- 2014-11-14 US US15/028,491 patent/US20160240368A1/en not_active Abandoned
- 2014-11-14 WO PCT/US2013/074356 patent/WO2015053800A2/en not_active Ceased
- 2014-11-14 JP JP2016521999A patent/JP2017502491A/ja active Pending
- 2014-11-14 CN CN201480055154.9A patent/CN105874568A/zh active Pending
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