JP2017502491A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2017502491A5 JP2017502491A5 JP2016521999A JP2016521999A JP2017502491A5 JP 2017502491 A5 JP2017502491 A5 JP 2017502491A5 JP 2016521999 A JP2016521999 A JP 2016521999A JP 2016521999 A JP2016521999 A JP 2016521999A JP 2017502491 A5 JP2017502491 A5 JP 2017502491A5
- Authority
- JP
- Japan
- Prior art keywords
- tin
- ammonium
- acid
- removal composition
- tiw
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 claims description 40
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 16
- 239000002253 acid Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- -1 ammonium carboxylate Chemical class 0.000 claims description 11
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 9
- 229910001080 W alloy Inorganic materials 0.000 claims description 9
- DEFVIWRASFVYLL-UHFFFAOYSA-N ethylene glycol bis(2-aminoethyl)tetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)CCOCCOCCN(CC(O)=O)CC(O)=O DEFVIWRASFVYLL-UHFFFAOYSA-N 0.000 claims description 8
- 239000007800 oxidant agent Substances 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- KWIPUXXIFQQMKN-UHFFFAOYSA-N 2-azaniumyl-3-(4-cyanophenyl)propanoate Chemical compound OC(=O)C(N)CC1=CC=C(C#N)C=C1 KWIPUXXIFQQMKN-UHFFFAOYSA-N 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 4
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 claims description 4
- 239000005695 Ammonium acetate Substances 0.000 claims description 4
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 claims description 4
- 239000004251 Ammonium lactate Substances 0.000 claims description 4
- FTEDXVNDVHYDQW-UHFFFAOYSA-N BAPTA Chemical compound OC(=O)CN(CC(O)=O)C1=CC=CC=C1OCCOC1=CC=CC=C1N(CC(O)=O)CC(O)=O FTEDXVNDVHYDQW-UHFFFAOYSA-N 0.000 claims description 4
- FCKYPQBAHLOOJQ-UHFFFAOYSA-N Cyclohexane-1,2-diaminetetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)C1CCCCC1N(CC(O)=O)CC(O)=O FCKYPQBAHLOOJQ-UHFFFAOYSA-N 0.000 claims description 4
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 4
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 claims description 4
- 150000001413 amino acids Chemical class 0.000 claims description 4
- 229940043376 ammonium acetate Drugs 0.000 claims description 4
- 235000019257 ammonium acetate Nutrition 0.000 claims description 4
- 229940090948 ammonium benzoate Drugs 0.000 claims description 4
- BVCZEBOGSOYJJT-UHFFFAOYSA-N ammonium carbamate Chemical compound [NH4+].NC([O-])=O BVCZEBOGSOYJJT-UHFFFAOYSA-N 0.000 claims description 4
- 239000001099 ammonium carbonate Substances 0.000 claims description 4
- 235000012501 ammonium carbonate Nutrition 0.000 claims description 4
- 229940059265 ammonium lactate Drugs 0.000 claims description 4
- 235000019286 ammonium lactate Nutrition 0.000 claims description 4
- VBIXEXWLHSRNKB-UHFFFAOYSA-N ammonium oxalate Chemical compound [NH4+].[NH4+].[O-]C(=O)C([O-])=O VBIXEXWLHSRNKB-UHFFFAOYSA-N 0.000 claims description 4
- NHJPVZLSLOHJDM-UHFFFAOYSA-N azane;butanedioic acid Chemical compound [NH4+].[NH4+].[O-]C(=O)CCC([O-])=O NHJPVZLSLOHJDM-UHFFFAOYSA-N 0.000 claims description 4
- RZOBLYBZQXQGFY-HSHFZTNMSA-N azanium;(2r)-2-hydroxypropanoate Chemical compound [NH4+].C[C@@H](O)C([O-])=O RZOBLYBZQXQGFY-HSHFZTNMSA-N 0.000 claims description 4
- NGPGDYLVALNKEG-UHFFFAOYSA-N azanium;azane;2,3,4-trihydroxy-4-oxobutanoate Chemical compound [NH4+].[NH4+].[O-]C(=O)C(O)C(O)C([O-])=O NGPGDYLVALNKEG-UHFFFAOYSA-N 0.000 claims description 4
- KXDHJXZQYSOELW-UHFFFAOYSA-N carbonic acid monoamide Natural products NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 claims description 4
- KYQODXQIAJFKPH-UHFFFAOYSA-N diazanium;2-[2-[bis(carboxymethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical compound [NH4+].[NH4+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O KYQODXQIAJFKPH-UHFFFAOYSA-N 0.000 claims description 4
- 239000003989 dielectric material Substances 0.000 claims description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 4
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 claims description 4
- 229960003330 pentetic acid Drugs 0.000 claims description 4
- LESFYQKBUCDEQP-UHFFFAOYSA-N tetraazanium;2-[2-[bis(carboxylatomethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical compound N.N.N.N.OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O LESFYQKBUCDEQP-UHFFFAOYSA-N 0.000 claims description 4
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 claims description 4
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 2
- 235000019253 formic acid Nutrition 0.000 claims description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 8
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 8
- LFTLOKWAGJYHHR-UHFFFAOYSA-N N-methylmorpholine N-oxide Chemical compound CN1(=O)CCOCC1 LFTLOKWAGJYHHR-UHFFFAOYSA-N 0.000 description 6
- 229910020366 ClO 4 Inorganic materials 0.000 description 4
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 4
- PZZHMLOHNYWKIK-UHFFFAOYSA-N eddha Chemical compound C=1C=CC=C(O)C=1C(C(=O)O)NCCNC(C(O)=O)C1=CC=CC=C1O PZZHMLOHNYWKIK-UHFFFAOYSA-N 0.000 description 4
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 4
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 4
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 description 3
- GDDNTTHUKVNJRA-UHFFFAOYSA-N 3-bromo-3,3-difluoroprop-1-ene Chemical compound FC(F)(Br)C=C GDDNTTHUKVNJRA-UHFFFAOYSA-N 0.000 description 2
- 239000004342 Benzoyl peroxide Substances 0.000 description 2
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- WDLRUFUQRNWCPK-UHFFFAOYSA-N Tetraxetan Chemical compound OC(=O)CN1CCN(CC(O)=O)CCN(CC(O)=O)CCN(CC(O)=O)CC1 WDLRUFUQRNWCPK-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- KHPLPBHMTCTCHA-UHFFFAOYSA-N ammonium chlorate Chemical compound N.OCl(=O)=O KHPLPBHMTCTCHA-UHFFFAOYSA-N 0.000 description 2
- VZTDIZULWFCMLS-UHFFFAOYSA-N ammonium formate Chemical compound [NH4+].[O-]C=O VZTDIZULWFCMLS-UHFFFAOYSA-N 0.000 description 2
- 235000019395 ammonium persulphate Nutrition 0.000 description 2
- ZRDJERPXCFOFCP-UHFFFAOYSA-N azane;iodic acid Chemical compound [NH4+].[O-]I(=O)=O ZRDJERPXCFOFCP-UHFFFAOYSA-N 0.000 description 2
- YUUVAZCKXDQEIS-UHFFFAOYSA-N azanium;chlorite Chemical compound [NH4+].[O-]Cl=O YUUVAZCKXDQEIS-UHFFFAOYSA-N 0.000 description 2
- URGYLQKORWLZAQ-UHFFFAOYSA-N azanium;periodate Chemical compound [NH4+].[O-]I(=O)(=O)=O URGYLQKORWLZAQ-UHFFFAOYSA-N 0.000 description 2
- 235000019400 benzoyl peroxide Nutrition 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- RKKOMEIYHHASIN-UHFFFAOYSA-N hydroperoxyboronic acid Chemical compound OOB(O)O RKKOMEIYHHASIN-UHFFFAOYSA-N 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 2
- FDXKBUSUNHRUIZ-UHFFFAOYSA-M tetramethylazanium;chlorite Chemical compound [O-]Cl=O.C[N+](C)(C)C FDXKBUSUNHRUIZ-UHFFFAOYSA-M 0.000 description 2
- ZRVXFJFFJZFRLQ-UHFFFAOYSA-M tetramethylazanium;iodate Chemical compound [O-]I(=O)=O.C[N+](C)(C)C ZRVXFJFFJZFRLQ-UHFFFAOYSA-M 0.000 description 2
- ZCWKIFAQRXNZCH-UHFFFAOYSA-M tetramethylazanium;perchlorate Chemical compound C[N+](C)(C)C.[O-]Cl(=O)(=O)=O ZCWKIFAQRXNZCH-UHFFFAOYSA-M 0.000 description 2
- HLQAWDQQEJSALG-UHFFFAOYSA-M tetramethylazanium;periodate Chemical compound C[N+](C)(C)C.[O-]I(=O)(=O)=O HLQAWDQQEJSALG-UHFFFAOYSA-M 0.000 description 2
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910008599 TiW Inorganic materials 0.000 description 1
- AXJNNRSSILJLST-UHFFFAOYSA-N [Cl+].C[N+](C)(C)C Chemical compound [Cl+].C[N+](C)(C)C AXJNNRSSILJLST-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000006184 cosolvent Substances 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 125000000267 glycino group Chemical group [H]N([*])C([H])([H])C(=O)O[H] 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361889968P | 2013-10-11 | 2013-10-11 | |
| US61/889,968 | 2013-10-11 | ||
| PCT/US2013/074356 WO2015053800A2 (en) | 2013-10-11 | 2014-11-14 | Method and composition for selectively removing metal hardmask and other residues from semiconductor device substrates comprising low-k dielectric material and copper |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2017502491A JP2017502491A (ja) | 2017-01-19 |
| JP2017502491A5 true JP2017502491A5 (enExample) | 2017-12-28 |
Family
ID=52810036
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016522060A Active JP6523269B2 (ja) | 2013-10-11 | 2014-10-09 | ハードマスクを選択的に除去するための除去組成物 |
| JP2016521931A Pending JP2016535819A (ja) | 2013-10-11 | 2014-10-09 | ハードマスクを選択的に除去するための除去組成物及びその方法 |
| JP2016521999A Pending JP2017502491A (ja) | 2013-10-11 | 2014-11-14 | 低ｋ誘電材料及び銅を含む半導体デバイス基板から金属ハードマスク及びその他の残留物を選択的に除去するための方法及び組成物 |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016522060A Active JP6523269B2 (ja) | 2013-10-11 | 2014-10-09 | ハードマスクを選択的に除去するための除去組成物 |
| JP2016521931A Pending JP2016535819A (ja) | 2013-10-11 | 2014-10-09 | ハードマスクを選択的に除去するための除去組成物及びその方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (4) | US20150104952A1 (enExample) |
| JP (3) | JP6523269B2 (enExample) |
| KR (3) | KR102327432B1 (enExample) |
| CN (3) | CN105874562B (enExample) |
| TW (3) | TW201522574A (enExample) |
| WO (1) | WO2015053800A2 (enExample) |
Families Citing this family (47)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI659098B (zh) * | 2014-01-29 | 2019-05-11 | 美商恩特葛瑞斯股份有限公司 | 化學機械研磨後配方及其使用方法 |
| SG11201700255UA (en) * | 2014-07-15 | 2017-02-27 | Basf Se | A chemical mechanical polishing (cmp) composition |
| WO2016068182A1 (ja) * | 2014-10-31 | 2016-05-06 | 富士フイルム株式会社 | Ｍｒａｍドライエッチング残渣除去組成物、磁気抵抗メモリの製造方法、及び、コバルト除去組成物 |
| US9976111B2 (en) * | 2015-05-01 | 2018-05-22 | Versum Materials Us, Llc | TiN hard mask and etch residual removal |
| US10538846B2 (en) * | 2015-12-11 | 2020-01-21 | Dongwoo Fine-Chem Co., Ltd. | Etching solution composition for tungsten layer, method for preparing electronic device using the same and electronic device |
| JP6626748B2 (ja) * | 2016-03-09 | 2019-12-25 | 株式会社Adeka | タンタル含有層用エッチング液組成物及びエッチング方法 |
| WO2017167797A1 (en) * | 2016-03-29 | 2017-10-05 | Technic France | Solution and method for etching titanium based materials |
| US10577571B2 (en) * | 2016-11-08 | 2020-03-03 | Ecolab Usa Inc. | Non-aqueous cleaner for vegetable oil soils |
| KR102770063B1 (ko) * | 2016-11-29 | 2025-02-21 | 솔브레인 주식회사 | 식각용 조성물 및 식각용 조성물을 이용한 반도체 소자의 식각 방법 |
| US11035044B2 (en) * | 2017-01-23 | 2021-06-15 | Versum Materials Us, Llc | Etching solution for tungsten and GST films |
| KR102527728B1 (ko) * | 2017-03-31 | 2023-04-28 | 간또 가가꾸 가부시끼가이샤 | 티타늄층 또는 티타늄 함유층의 에칭액 조성물 및 에칭 방법 |
| CN107148156B (zh) * | 2017-05-08 | 2019-06-28 | 广东光华科技股份有限公司 | 3,6-二氧杂-1,8-辛二胺四乙酸衍生物的应用及osp处理液 |
| CN107357143B (zh) | 2017-07-25 | 2018-06-19 | 上海新阳半导体材料股份有限公司 | 一种清洗剂、其制备方法和应用 |
| CN107229193B (zh) * | 2017-07-25 | 2019-04-23 | 上海新阳半导体材料股份有限公司 | 一种清洗剂、其制备方法和应用 |
| US10870799B2 (en) * | 2017-08-25 | 2020-12-22 | Versum Materials Us, Llc | Etching solution for selectively removing tantalum nitride over titanium nitride during manufacture of a semiconductor device |
| TWI777911B (zh) | 2017-12-18 | 2022-09-11 | 美商恩特葛瑞斯股份有限公司 | 藉由原子層沉積塗覆所得之耐化學性多層塗層 |
| US11499236B2 (en) * | 2018-03-16 | 2022-11-15 | Versum Materials Us, Llc | Etching solution for tungsten word line recess |
| US11017995B2 (en) * | 2018-07-26 | 2021-05-25 | Versum Materials Us, Llc | Composition for TiN hard mask removal and etch residue cleaning |
| GB201813368D0 (en) | 2018-08-16 | 2018-10-03 | Lam Res Ag | Etchant composition |
| US11085011B2 (en) * | 2018-08-28 | 2021-08-10 | Entegris, Inc. | Post CMP cleaning compositions for ceria particles |
| KR102665340B1 (ko) * | 2018-09-18 | 2024-05-14 | 삼성전자주식회사 | 식각 조성물 및 이를 이용한 반도체 소자의 제조 방법 |
| KR102668574B1 (ko) * | 2019-03-06 | 2024-05-24 | 동우 화인켐 주식회사 | 식각 조성물 |
| WO2020223106A1 (en) | 2019-05-01 | 2020-11-05 | Fujifilm Electronic Materials U.S.A., Inc. | Etching compositions |
| JP7635158B2 (ja) * | 2019-05-23 | 2025-02-25 | ビーエーエスエフ ソシエタス・ヨーロピア | 低ｋ値の材料、銅、コバルト、および／またはタングステンの層が存在する状態で、ハードマスクおよび／またはエッチング停止層を選択的にエッチングするための組成物および方法 |
| TWI856104B (zh) * | 2019-06-03 | 2024-09-21 | 美商富士軟片電子材料美國股份有限公司 | 蝕刻組成物 |
| US11268025B2 (en) | 2019-06-13 | 2022-03-08 | Fujifilm Electronic Materials U.S.A., Inc. | Etching compositions |
| CN110459468A (zh) * | 2019-08-29 | 2019-11-15 | 上海华力集成电路制造有限公司 | TiN薄膜的刻蚀方法 |
| KR102869325B1 (ko) * | 2019-09-10 | 2025-10-14 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 에칭 조성물 |
| EP3825441A1 (en) * | 2019-11-21 | 2021-05-26 | COVENTYA S.p.A. | An electrolytic treatment device for preparing plastic parts to be metallized and a method for etching plastic parts |
| CN113130292A (zh) * | 2019-12-31 | 2021-07-16 | 安集微电子科技（上海）股份有限公司 | 一种等离子体刻蚀残留物清洗液 |
| KR102877724B1 (ko) * | 2020-02-05 | 2025-10-29 | 삼성전자주식회사 | 식각 조성물 및 이를 이용한 반도체 소자의 제조 방법 |
| CN113430060B (zh) * | 2020-03-23 | 2024-04-19 | 上海新阳半导体材料股份有限公司 | 用于移除硬遮罩的钨相容性清洗液、其制备方法及应用 |
| CN113430063B (zh) * | 2020-03-23 | 2024-02-23 | 上海新阳半导体材料股份有限公司 | 用于选择性移除硬遮罩的清洗液、其制备方法及应用 |
| CN113430072B (zh) * | 2020-03-23 | 2024-05-07 | 上海新阳半导体材料股份有限公司 | 移除硬遮罩的钴兼容性半水基清洗液、其制备方法及应用 |
| CN113430066B (zh) * | 2020-03-23 | 2024-04-19 | 上海新阳半导体材料股份有限公司 | 用于选择性移除硬遮罩的清洗组合物、其制备方法及应用 |
| CN113528255A (zh) * | 2020-04-15 | 2021-10-22 | 安集微电子科技（上海）股份有限公司 | 一种化学清洗液及其使用方法 |
| TWI824299B (zh) * | 2020-09-22 | 2023-12-01 | 美商恩特葛瑞斯股份有限公司 | 蝕刻劑組合物 |
| CN112323136A (zh) * | 2020-10-26 | 2021-02-05 | 深圳市裕展精密科技有限公司 | 退镀液以及退镀方法 |
| CN113150884B (zh) * | 2021-04-27 | 2022-12-30 | 上海新阳半导体材料股份有限公司 | 一种含氟清洗液组合物的制备方法 |
| CN113161234B (zh) * | 2021-04-27 | 2023-02-17 | 上海新阳半导体材料股份有限公司 | 一种含氟清洗液组合物的应用 |
| JP2022184639A (ja) * | 2021-06-01 | 2022-12-13 | 上村工業株式会社 | 銅エッチング液 |
| US11550229B1 (en) | 2021-06-18 | 2023-01-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Enhancing lithography operation for manufacturing semiconductor devices |
| JP7729988B2 (ja) * | 2021-10-20 | 2025-08-26 | インテグリス・インコーポレーテッド | 選択的ウェットエッチング組成物および方法 |
| TW202407150A (zh) | 2022-05-10 | 2024-02-16 | 日商東京應化工業股份有限公司 | 蝕刻液 |
| DE102022113998A1 (de) * | 2022-06-02 | 2023-12-07 | Betek Gmbh & Co. Kg | Entschichtungslösung, Verfahren und Vorrichtung zum nasschemischen Entfernen einer PVD- oder CVD-Titannitrid-Schicht von einem Hartmetall-Trägerelement |
| CN115141629B (zh) * | 2022-06-15 | 2023-06-02 | 湖北兴福电子材料股份有限公司 | TiN去除液 |
| CN115725369B (zh) * | 2022-11-03 | 2024-03-08 | 上海新阳半导体材料股份有限公司 | 一种清洗液组合物的应用 |
Family Cites Families (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8701184A (nl) * | 1987-05-18 | 1988-12-16 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
| JPH10209604A (ja) * | 1997-01-17 | 1998-08-07 | Hitachi Ltd | プリント配線基板の製造方法並びにそれに用いる粗化液及び粗化液の調製方法 |
| CN1169196C (zh) | 1997-04-03 | 2004-09-29 | 日本电气株式会社 | 制造半导体器件的方法 |
| JP3039493B2 (ja) | 1997-11-28 | 2000-05-08 | 日本電気株式会社 | 基板の洗浄方法及び洗浄溶液 |
| US7579308B2 (en) * | 1998-07-06 | 2009-08-25 | Ekc/Dupont Electronics Technologies | Compositions and processes for photoresist stripping and residue removal in wafer level packaging |
| US6358788B1 (en) | 1999-08-30 | 2002-03-19 | Micron Technology, Inc. | Method of fabricating a wordline in a memory array of a semiconductor device |
| US6413923B2 (en) * | 1999-11-15 | 2002-07-02 | Arch Specialty Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
| US6599370B2 (en) * | 2000-10-16 | 2003-07-29 | Mallinckrodt Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
| US7543592B2 (en) * | 2001-12-04 | 2009-06-09 | Ekc Technology, Inc. | Compositions and processes for photoresist stripping and residue removal in wafer level packaging |
| JP2003339509A (ja) | 2002-05-28 | 2003-12-02 | Koji Okuda | 縦型ハンガー掛け具 |
| WO2004094581A1 (en) | 2003-04-18 | 2004-11-04 | Ekc Technology, Inc. | Aqueous fluoride compositions for cleaning semiconductor devices |
| ES2293340T3 (es) | 2003-08-19 | 2008-03-16 | Mallinckrodt Baker, Inc. | Composiciones decapantes y de limpieza para microelectronica. |
| WO2005043245A2 (en) * | 2003-10-29 | 2005-05-12 | Mallinckrodt Baker Inc. | Alkaline, post plasma etch/ash residue removers and photoresist stripping compositions containing metal-halide corrosion inhibitors |
| JP4474914B2 (ja) * | 2003-12-17 | 2010-06-09 | 東ソー株式会社 | レジスト残渣剥離用組成物及びそれを用いた洗浄方法 |
| MY139624A (en) | 2004-03-01 | 2009-10-30 | Avantor Performance Mat Inc | Stripping and cleaning compositions for microelectronics |
| US20060094613A1 (en) * | 2004-10-29 | 2006-05-04 | Lee Wai M | Compositions and processes for photoresist stripping and residue removal in wafer level packaging |
| JP4577095B2 (ja) * | 2005-06-03 | 2010-11-10 | 東ソー株式会社 | 金属チタンのエッチング用組成物及びそれを用いたエッチング方法 |
| JP2009512194A (ja) | 2005-10-05 | 2009-03-19 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | ポストエッチング残渣を除去するための酸化性水性洗浄剤 |
| CN101356629B (zh) * | 2005-11-09 | 2012-06-06 | 高级技术材料公司 | 用于将其上具有低k介电材料的半导体晶片再循环的组合物和方法 |
| US7947637B2 (en) * | 2006-06-30 | 2011-05-24 | Fujifilm Electronic Materials, U.S.A., Inc. | Cleaning formulation for removing residues on surfaces |
| US20080139436A1 (en) * | 2006-09-18 | 2008-06-12 | Chris Reid | Two step cleaning process to remove resist, etch residue, and copper oxide from substrates having copper and low-K dielectric material |
| US8685909B2 (en) * | 2006-09-21 | 2014-04-01 | Advanced Technology Materials, Inc. | Antioxidants for post-CMP cleaning formulations |
| US20100163788A1 (en) * | 2006-12-21 | 2010-07-01 | Advanced Technology Materials, Inc. | Liquid cleaner for the removal of post-etch residues |
| US20100112728A1 (en) * | 2007-03-31 | 2010-05-06 | Advanced Technology Materials, Inc. | Methods for stripping material for wafer reclamation |
| KR101382998B1 (ko) * | 2007-08-22 | 2014-04-09 | 다이킨 고교 가부시키가이샤 | 반도체 드라이 프로세스 후의 잔사 제거액 및 이를 이용한 잔사 제거 방법 |
| EP2219882A4 (en) * | 2007-11-16 | 2011-11-23 | Ekc Technology Inc | COMPOSITIONS FOR REMOVING METAL HARD MASK REST OF A SEMICONDUCTOR SUBSTRATE |
| EP2234145B1 (en) * | 2007-12-21 | 2013-02-20 | Wako Pure Chemical Industries, Ltd. | Etching agent, etching method and liquid for preparing etching agent |
| JP5813280B2 (ja) * | 2008-03-19 | 2015-11-17 | 富士フイルム株式会社 | 半導体デバイス用洗浄液、および洗浄方法 |
| US7825079B2 (en) * | 2008-05-12 | 2010-11-02 | Ekc Technology, Inc. | Cleaning composition comprising a chelant and quaternary ammonium hydroxide mixture |
| CN102149851A (zh) | 2008-09-09 | 2011-08-10 | 昭和电工株式会社 | 钛系金属、钨系金属、钛钨系金属或它们的氮化物的蚀刻液 |
| US8080475B2 (en) | 2009-01-23 | 2011-12-20 | Intel Corporation | Removal chemistry for selectively etching metal hard mask |
| JP2013533631A (ja) | 2010-07-16 | 2013-08-22 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | エッチング後残渣を除去するための水性洗浄剤 |
| KR101270560B1 (ko) * | 2010-11-12 | 2013-06-03 | 오씨아이 주식회사 | 금속막 식각용 조성물 |
| KR20120066950A (ko) * | 2010-12-15 | 2012-06-25 | 삼성전자주식회사 | 식각액, 이를 이용한 표시 장치 및 그 제조 방법 |
| US9257270B2 (en) | 2011-08-15 | 2016-02-09 | Ekc Technology | Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material |
| EP2798669B1 (en) * | 2011-12-28 | 2021-03-31 | Entegris, Inc. | Compositions and methods for selectively etching titanium nitride |
| US8835326B2 (en) | 2012-01-04 | 2014-09-16 | International Business Machines Corporation | Titanium-nitride removal |
| US9070625B2 (en) | 2012-01-04 | 2015-06-30 | International Business Machines Corporation | Selective etch chemistry for gate electrode materials |
| US20130200040A1 (en) * | 2012-01-04 | 2013-08-08 | International Business Machines Corporation | Titanium nitride removal |
| JP5692108B2 (ja) * | 2012-02-03 | 2015-04-01 | 日立化成株式会社 | 半導体実装用導電基材の表面処理方法、ならびにこの処理方法を用いてなる導電基材および半導体パッケージ |
| US9058976B2 (en) * | 2012-11-06 | 2015-06-16 | International Business Machines Corporation | Cleaning composition and process for cleaning semiconductor devices and/or tooling during manufacturing thereof |
-
2013
- 2013-12-11 US US14/103,303 patent/US20150104952A1/en not_active Abandoned
-
2014
- 2014-01-03 TW TW103100235A patent/TW201522574A/zh unknown
- 2014-10-09 TW TW103135158A patent/TWI650414B/zh active
- 2014-10-09 JP JP2016522060A patent/JP6523269B2/ja active Active
- 2014-10-09 CN CN201480055153.4A patent/CN105874562B/zh active Active
- 2014-10-09 CN CN201480055151.5A patent/CN105612599B/zh active Active
- 2014-10-09 KR KR1020167012242A patent/KR102327432B1/ko active Active
- 2014-10-09 JP JP2016521931A patent/JP2016535819A/ja active Pending
- 2014-10-09 US US15/028,573 patent/US10005991B2/en active Active
- 2014-10-09 KR KR1020167012243A patent/KR102334603B1/ko active Active
- 2014-10-09 TW TW103135159A patent/TWI650415B/zh active
- 2014-10-09 US US15/028,501 patent/US10155921B2/en active Active
- 2014-11-14 US US15/028,491 patent/US20160240368A1/en not_active Abandoned
- 2014-11-14 JP JP2016521999A patent/JP2017502491A/ja active Pending
- 2014-11-14 WO PCT/US2013/074356 patent/WO2015053800A2/en not_active Ceased
- 2014-11-14 KR KR1020167012240A patent/KR20170076616A/ko not_active Withdrawn
- 2014-11-14 CN CN201480055154.9A patent/CN105874568A/zh active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2017502491A5 (enExample) | ||
| JP2016535819A5 (enExample) | ||
| JP2016536785A5 (enExample) | ||
| JP6523269B2 (ja) | ハードマスクを選択的に除去するための除去組成物 | |
| TW202134421A (zh) | 等離子體刻蝕殘留物清洗液 | |
| WO2016041407A1 (zh) | 一种蚀刻液及其应用 | |
| JP2013058629A5 (enExample) | ||
| TW200614362A (en) | Cleaning liquid and cleaning method | |
| TW201610234A (zh) | 蝕刻液組成物及蝕刻方法 | |
| JP2009500415A5 (enExample) | ||
| MY152247A (en) | Etching agent, etching method and liquid for preparing etching agent | |
| JP2007116105A5 (enExample) | ||
| JP5101505B2 (ja) | Ｃｕ層及びＣｕ／Ｎｉ層用の安定化されたエッチング溶液 | |
| KR20040086290A (ko) | 텅스텐 연마액 | |
| CN102113098A (zh) | 硅蚀刻液和蚀刻方法 | |
| JP5472102B2 (ja) | シリコンエッチング液およびエッチング方法 | |
| JP2019098307A5 (enExample) | ||
| JP4355201B2 (ja) | タングステン金属除去液及びそれを用いたタングステン金属の除去方法 | |
| JP2007532006A (ja) | 高度に選択的な酸化ケイ素エッチング組成物 | |
| TWI359866B (en) | Cleaning composition and method | |
| JP4867520B2 (ja) | エッチング用組成物及びエッチング方法 | |
| TWI656204B (zh) | 研磨用組成物、該使用方法、及基板之製造方法 | |
| TWI841746B (zh) | 過氧化氫分解抑制劑 | |
| JP4839968B2 (ja) | レジスト除去用組成物及びレジストの除去方法 | |
| JP4577095B2 (ja) | 金属チタンのエッチング用組成物及びそれを用いたエッチング方法 |