JP2017191934A5 - - Google Patents

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JP2017191934A5
JP2017191934A5 JP2017074988A JP2017074988A JP2017191934A5 JP 2017191934 A5 JP2017191934 A5 JP 2017191934A5 JP 2017074988 A JP2017074988 A JP 2017074988A JP 2017074988 A JP2017074988 A JP 2017074988A JP 2017191934 A5 JP2017191934 A5 JP 2017191934A5
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insulating layer
oxide semiconductor
semiconductor layer
layer
forming
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JP2017191934A (ja
JP6987520B2 (ja
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JP2017074988A 2016-04-08 2017-04-05 半導体装置 Expired - Fee Related JP6987520B2 (ja)

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JP2021195286A JP7270711B2 (ja) 2016-04-08 2021-12-01 半導体装置

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JP2016078286 2016-04-08
JP2016078347 2016-04-08
JP2016078347 2016-04-08
JP2016078286 2016-04-08

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JP2017191934A JP2017191934A (ja) 2017-10-19
JP2017191934A5 true JP2017191934A5 (enExample) 2020-05-14
JP6987520B2 JP6987520B2 (ja) 2022-01-05

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JP2023071278A Withdrawn JP2023099557A (ja) 2016-04-08 2023-04-25 半導体装置
JP2024176875A Active JP7796192B2 (ja) 2016-04-08 2024-10-09 半導体装置
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JP2024176875A Active JP7796192B2 (ja) 2016-04-08 2024-10-09 半導体装置
JP2025272354A Pending JP2026040554A (ja) 2016-04-08 2025-12-22 半導体装置

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Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200077532A (ko) * 2017-11-02 2020-06-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102550633B1 (ko) * 2018-05-04 2023-07-04 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조방법
US12253391B2 (en) 2018-05-24 2025-03-18 The Research Foundation For The State University Of New York Multielectrode capacitive sensor without pull-in risk
US11251224B2 (en) * 2018-10-31 2022-02-15 Samsung Display Co., Ltd. Display device and method of fabricating the same
US12237389B2 (en) 2018-11-02 2025-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11929730B2 (en) * 2020-02-14 2024-03-12 Epistar Corporation Acoustic wave device and forming method thereof
DE102021108615A1 (de) * 2020-05-29 2021-12-02 Taiwan Semiconductor Manufacturing Company, Ltd. Erhöhter source/drain-oxidhalbleiterdünnfilmtransistor und verfahren zur herstellung davon
US12690233B2 (en) * 2020-05-29 2026-07-21 Taiwan Semiconductor Manufacturing Company Limited Raised source/drain oxide semiconducting thin film transistor and methods of making the same
US12635485B2 (en) * 2020-08-27 2026-05-19 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
KR20220089806A (ko) * 2020-12-21 2022-06-29 삼성디스플레이 주식회사 발광 소자의 제조 방법, 이를 이용하여 제조된 발광 소자, 및 이를 포함하는 표시 장치
TWI813944B (zh) * 2021-02-08 2023-09-01 友達光電股份有限公司 主動元件基板及主動元件基板的製造方法
CN112882606B (zh) * 2021-03-04 2022-12-27 业成科技（成都）有限公司 触控面板
KR102690226B1 (ko) * 2022-06-16 2024-08-05 한국생산기술연구원 박막 트랜지스터 및 이의 제조 방법
JP7410261B1 (ja) 2022-12-08 2024-01-09 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
KR102956073B1 (ko) * 2025-02-20 2026-04-22 충북대학교 산학협력단 시냅스 소자 및 이의 동작 방법

Family Cites Families (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3537854B2 (ja) * 1992-12-29 2004-06-14 エルジー フィリップス エルシーディー カンパニー リミテッド 薄膜トランジスタの製造方法
US7973313B2 (en) 2003-02-24 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Thin film integrated circuit device, IC label, container comprising the thin film integrated circuit, manufacturing method of the thin film integrated circuit device, manufacturing method of the container, and management method of product having the container
JP4566578B2 (ja) * 2003-02-24 2010-10-20 株式会社半導体エネルギー研究所 薄膜集積回路の作製方法
JP4108633B2 (ja) * 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
TWI336921B (en) * 2003-07-18 2011-02-01 Semiconductor Energy Lab Method for manufacturing semiconductor device
CN100464429C (zh) * 2003-10-28 2009-02-25 株式会社半导体能源研究所 液晶显示设备及其制造方法,以及液晶电视接收机
KR101088103B1 (ko) * 2003-10-28 2011-11-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치, 및 텔레비전 수상기
WO2005050597A1 (en) * 2003-11-14 2005-06-02 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
JP5126729B2 (ja) 2004-11-10 2013-01-23 キヤノン株式会社 画像表示装置
TWI505473B (zh) * 2005-01-28 2015-10-21 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US8900970B2 (en) * 2006-04-28 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device using a flexible substrate
KR101345376B1 (ko) * 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
US20090278120A1 (en) * 2008-05-09 2009-11-12 Korea Institute Of Science And Technology Thin Film Transistor
KR100963027B1 (ko) * 2008-06-30 2010-06-10 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
TWI469354B (zh) * 2008-07-31 2015-01-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI622175B (zh) * 2008-07-31 2018-04-21 半導體能源研究所股份有限公司 半導體裝置
US8945981B2 (en) * 2008-07-31 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9666719B2 (en) * 2008-07-31 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI424506B (zh) * 2008-08-08 2014-01-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
KR20100023151A (ko) * 2008-08-21 2010-03-04 삼성모바일디스플레이주식회사 박막 트랜지스터 및 그 제조방법
WO2010032640A1 (en) * 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Display device
CN103928476A (zh) * 2008-10-03 2014-07-16 株式会社半导体能源研究所 显示装置及其制造方法
JP5552753B2 (ja) * 2008-10-08 2014-07-16 ソニー株式会社 薄膜トランジスタおよび表示装置
JP5361651B2 (ja) * 2008-10-22 2013-12-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8704216B2 (en) * 2009-02-27 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8766269B2 (en) 2009-07-02 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, lighting device, and electronic device
WO2011007677A1 (en) 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN102598283B (zh) 2009-09-04 2016-05-18 株式会社半导体能源研究所 半导体器件及其制造方法
EP2478554B1 (en) * 2009-09-16 2016-06-08 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
KR102393447B1 (ko) * 2009-11-13 2022-05-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP5679143B2 (ja) * 2009-12-01 2015-03-04 ソニー株式会社 薄膜トランジスタならびに表示装置および電子機器
KR20120103676A (ko) 2009-12-04 2012-09-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101481398B1 (ko) * 2009-12-11 2015-01-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 래치 회로 및 cpu
WO2011074336A1 (ja) * 2009-12-17 2011-06-23 シャープ株式会社 アクティブマトリクス基板、及び製造方法
WO2011080999A1 (en) * 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9147768B2 (en) * 2010-04-02 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor and a metal oxide film
CN102844872B (zh) * 2010-04-02 2016-08-24 株式会社半导体能源研究所 半导体装置
US8629438B2 (en) * 2010-05-21 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101862808B1 (ko) * 2010-06-18 2018-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
DE112011102644B4 (de) 2010-08-06 2019-12-05 Semiconductor Energy Laboratory Co., Ltd. Integrierte Halbleiterschaltung
US9190524B2 (en) * 2010-09-09 2015-11-17 Sharp Kabushiki Kaisha Thin film transistor substrate, method for producing the same, and display device
US9252279B2 (en) 2011-08-31 2016-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102100425B1 (ko) * 2011-12-27 2020-04-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR102034911B1 (ko) * 2012-01-25 2019-10-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US20130207111A1 (en) 2012-02-09 2013-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including semiconductor device, electronic device including semiconductor device, and method for manufacturing semiconductor device
JP2013201428A (ja) 2012-02-23 2013-10-03 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US9276121B2 (en) * 2012-04-12 2016-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9006024B2 (en) * 2012-04-25 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9236408B2 (en) * 2012-04-25 2016-01-12 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device including photodiode
WO2013180040A1 (en) * 2012-05-31 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9153699B2 (en) * 2012-06-15 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with multiple oxide semiconductor layers
US8901557B2 (en) * 2012-06-15 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102161077B1 (ko) * 2012-06-29 2020-09-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20220013471A (ko) 2012-06-29 2022-02-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 디스플레이 디바이스
US9190525B2 (en) * 2012-07-06 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor layer
JP6006558B2 (ja) * 2012-07-17 2016-10-12 株式会社半導体エネルギー研究所 半導体装置及びその製造方法
JP6134598B2 (ja) * 2012-08-02 2017-05-24 株式会社半導体エネルギー研究所 半導体装置
KR102171650B1 (ko) * 2012-08-10 2020-10-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US9245958B2 (en) * 2012-08-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6211843B2 (ja) * 2012-08-10 2017-10-11 株式会社半導体エネルギー研究所 半導体装置
WO2014054569A1 (ja) * 2012-10-03 2014-04-10 シャープ株式会社 半導体装置及び表示装置
KR102279459B1 (ko) 2012-10-24 2021-07-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR20230152795A (ko) * 2012-11-08 2023-11-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 디스플레이 장치
TWI614813B (zh) 2013-01-21 2018-02-11 半導體能源研究所股份有限公司 半導體裝置的製造方法
JP6298662B2 (ja) * 2013-03-14 2018-03-20 株式会社半導体エネルギー研究所 半導体装置
US10566455B2 (en) * 2013-03-28 2020-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20140299873A1 (en) 2013-04-05 2014-10-09 Semiconductor Energy Laboratory Co., Ltd. Single-crystal oxide semiconductor, thin film, oxide stack, and formation method thereof
JP6124668B2 (ja) * 2013-04-26 2017-05-10 三菱電機株式会社 薄膜トランジスタ基板およびその製造方法
US9293599B2 (en) 2013-05-20 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
DE102014019794B4 (de) * 2013-05-20 2024-10-24 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
JP6426379B2 (ja) 2013-06-19 2018-11-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102290801B1 (ko) * 2013-06-21 2021-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP6232219B2 (ja) 2013-06-28 2017-11-15 東京エレクトロン株式会社 多層保護膜の形成方法
JP6386323B2 (ja) * 2013-10-04 2018-09-05 株式会社半導体エネルギー研究所 半導体装置
US9590111B2 (en) * 2013-11-06 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
US9627413B2 (en) 2013-12-12 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
SG11201604650SA (en) 2013-12-26 2016-07-28 Semiconductor Energy Lab Semiconductor device
KR102791575B1 (ko) * 2013-12-27 2025-04-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9318618B2 (en) 2013-12-27 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2015188062A (ja) 2014-02-07 2015-10-29 株式会社半導体エネルギー研究所 半導体装置
JP6629509B2 (ja) * 2014-02-21 2020-01-15 株式会社半導体エネルギー研究所 酸化物半導体膜
JP6545976B2 (ja) 2014-03-07 2019-07-17 株式会社半導体エネルギー研究所 半導体装置
KR102186576B1 (ko) * 2014-03-21 2020-12-04 삼성디스플레이 주식회사 액정 표시 패널 및 이의 제조 방법
WO2015159179A1 (en) 2014-04-18 2015-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9780226B2 (en) * 2014-04-25 2017-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI666776B (zh) 2014-06-20 2019-07-21 日商半導體能源研究所股份有限公司 半導體裝置以及包括該半導體裝置的顯示裝置
TW201624708A (zh) * 2014-11-21 2016-07-01 半導體能源研究所股份有限公司 半導體裝置及記憶體裝置
KR102582523B1 (ko) * 2015-03-19 2023-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
TWI695513B (zh) * 2015-03-27 2020-06-01 日商半導體能源研究所股份有限公司 半導體裝置及電子裝置
US10056497B2 (en) * 2015-04-15 2018-08-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

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