JP2016533005A - 有機電子素子用基板 - Google Patents
有機電子素子用基板 Download PDFInfo
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- JP2016533005A JP2016533005A JP2016529731A JP2016529731A JP2016533005A JP 2016533005 A JP2016533005 A JP 2016533005A JP 2016529731 A JP2016529731 A JP 2016529731A JP 2016529731 A JP2016529731 A JP 2016529731A JP 2016533005 A JP2016533005 A JP 2016533005A
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- 239000000758 substrate Substances 0.000 title claims abstract description 89
- -1 diamine compound Chemical class 0.000 claims description 40
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims description 28
- 239000002245 particle Substances 0.000 claims description 26
- 229920000642 polymer Polymers 0.000 claims description 16
- 125000000524 functional group Chemical group 0.000 claims description 11
- 125000006158 tetracarboxylic acid group Chemical group 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 7
- 239000011368 organic material Substances 0.000 claims description 6
- 230000003746 surface roughness Effects 0.000 claims description 6
- 125000001188 haloalkyl group Chemical group 0.000 claims description 5
- 125000003545 alkoxy group Chemical group 0.000 claims description 4
- 238000009833 condensation Methods 0.000 claims description 4
- 230000005494 condensation Effects 0.000 claims description 4
- 125000005843 halogen group Chemical group 0.000 claims description 3
- 229920001577 copolymer Polymers 0.000 claims description 2
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate group Chemical group [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 claims description 2
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 2
- 150000004985 diamines Chemical class 0.000 claims description 2
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 2
- ZMZDMBWJUHKJPS-UHFFFAOYSA-M thiocyanate group Chemical group [S-]C#N ZMZDMBWJUHKJPS-UHFFFAOYSA-M 0.000 claims description 2
- 238000006358 imidation reaction Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 28
- 238000000605 extraction Methods 0.000 abstract description 9
- 230000000704 physical effect Effects 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 252
- 239000010408 film Substances 0.000 description 71
- 239000000463 material Substances 0.000 description 46
- 238000000034 method Methods 0.000 description 40
- 230000004888 barrier function Effects 0.000 description 34
- 229920001721 polyimide Polymers 0.000 description 33
- 239000004642 Polyimide Substances 0.000 description 29
- 229920005575 poly(amic acid) Polymers 0.000 description 22
- NVKGJHAQGWCWDI-UHFFFAOYSA-N 4-[4-amino-2-(trifluoromethyl)phenyl]-3-(trifluoromethyl)aniline Chemical compound FC(F)(F)C1=CC(N)=CC=C1C1=CC=C(N)C=C1C(F)(F)F NVKGJHAQGWCWDI-UHFFFAOYSA-N 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 239000012790 adhesive layer Substances 0.000 description 14
- 239000011230 binding agent Substances 0.000 description 14
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 description 12
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 11
- 238000000231 atomic layer deposition Methods 0.000 description 11
- 238000002347 injection Methods 0.000 description 11
- 239000007924 injection Substances 0.000 description 11
- 239000000203 mixture Substances 0.000 description 11
- 239000000243 solution Substances 0.000 description 11
- 150000002894 organic compounds Chemical class 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- 239000012044 organic layer Substances 0.000 description 8
- 229910010413 TiO 2 Inorganic materials 0.000 description 7
- 239000000872 buffer Substances 0.000 description 7
- 150000004706 metal oxides Chemical class 0.000 description 7
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 6
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 6
- 238000006482 condensation reaction Methods 0.000 description 6
- 230000009477 glass transition Effects 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- 239000007983 Tris buffer Substances 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 125000005504 styryl group Chemical group 0.000 description 5
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 239000013039 cover film Substances 0.000 description 4
- 230000005525 hole transport Effects 0.000 description 4
- 229910052741 iridium Inorganic materials 0.000 description 4
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- QHHKLPCQTTWFSS-UHFFFAOYSA-N 5-[2-(1,3-dioxo-2-benzofuran-5-yl)-1,1,1,3,3,3-hexafluoropropan-2-yl]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)(C(F)(F)F)C(F)(F)F)=C1 QHHKLPCQTTWFSS-UHFFFAOYSA-N 0.000 description 3
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 3
- 125000005605 benzo group Chemical group 0.000 description 3
- 235000010290 biphenyl Nutrition 0.000 description 3
- 239000004305 biphenyl Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000839 emulsion Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 3
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical group C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 3
- NGQSLSMAEVWNPU-YTEMWHBBSA-N 1,2-bis[(e)-2-phenylethenyl]benzene Chemical compound C=1C=CC=CC=1/C=C/C1=CC=CC=C1\C=C\C1=CC=CC=C1 NGQSLSMAEVWNPU-YTEMWHBBSA-N 0.000 description 2
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 2
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 2
- KLCLIOISYBHYDZ-UHFFFAOYSA-N 1,4,4-triphenylbuta-1,3-dienylbenzene Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)=CC=C(C=1C=CC=CC=1)C1=CC=CC=C1 KLCLIOISYBHYDZ-UHFFFAOYSA-N 0.000 description 2
- VEPOHXYIFQMVHW-XOZOLZJESA-N 2,3-dihydroxybutanedioic acid (2S,3S)-3,4-dimethyl-2-phenylmorpholine Chemical compound OC(C(O)C(O)=O)C(O)=O.C[C@H]1[C@@H](OCCN1C)c1ccccc1 VEPOHXYIFQMVHW-XOZOLZJESA-N 0.000 description 2
- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical compound NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 description 2
- DKKYOQYISDAQER-UHFFFAOYSA-N 3-[3-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=C(OC=3C=C(N)C=CC=3)C=CC=2)=C1 DKKYOQYISDAQER-UHFFFAOYSA-N 0.000 description 2
- WCXGOVYROJJXHA-UHFFFAOYSA-N 3-[4-[4-(3-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(=CC=2)S(=O)(=O)C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 WCXGOVYROJJXHA-UHFFFAOYSA-N 0.000 description 2
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 2
- HXWWMGJBPGRWRS-CMDGGOBGSA-N 4- -2-tert-butyl-6- -4h-pyran Chemical compound O1C(C(C)(C)C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(C(CCN2CCC3(C)C)(C)C)=C2C3=C1 HXWWMGJBPGRWRS-CMDGGOBGSA-N 0.000 description 2
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 2
- OMHOXRVODFQGCA-UHFFFAOYSA-N 4-[(4-amino-3,5-dimethylphenyl)methyl]-2,6-dimethylaniline Chemical compound CC1=C(N)C(C)=CC(CC=2C=C(C)C(N)=C(C)C=2)=C1 OMHOXRVODFQGCA-UHFFFAOYSA-N 0.000 description 2
- IGSBHTZEJMPDSZ-UHFFFAOYSA-N 4-[(4-amino-3-methylcyclohexyl)methyl]-2-methylcyclohexan-1-amine Chemical compound C1CC(N)C(C)CC1CC1CC(C)C(N)CC1 IGSBHTZEJMPDSZ-UHFFFAOYSA-N 0.000 description 2
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 description 2
- KMKWGXGSGPYISJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910020366 ClO 4 Inorganic materials 0.000 description 2
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 239000002841 Lewis acid Substances 0.000 description 2
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 description 2
- 239000004472 Lysine Substances 0.000 description 2
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- 229920002367 Polyisobutene Polymers 0.000 description 2
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- DZBUGLKDJFMEHC-UHFFFAOYSA-N acridine Chemical compound C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Chemical compound [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- WDECIBYCCFPHNR-UHFFFAOYSA-N chrysene Chemical compound C1=CC=CC2=CC=C3C4=CC=CC=C4C=CC3=C21 WDECIBYCCFPHNR-UHFFFAOYSA-N 0.000 description 2
- 229920000547 conjugated polymer Polymers 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- VPUGDVKSAQVFFS-UHFFFAOYSA-N coronene Chemical compound C1=C(C2=C34)C=CC3=CC=C(C=C3)C4=C4C3=CC=C(C=C3)C4=C2C3=C1 VPUGDVKSAQVFFS-UHFFFAOYSA-N 0.000 description 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 150000007517 lewis acids Chemical class 0.000 description 2
- 229940018564 m-phenylenediamine Drugs 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- UHVLDCDWBKWDDN-UHFFFAOYSA-N n-phenyl-n-[4-[4-(n-pyren-2-ylanilino)phenyl]phenyl]pyren-2-amine Chemical group C1=CC=CC=C1N(C=1C=C2C=CC3=CC=CC4=CC=C(C2=C43)C=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C3C=CC4=CC=CC5=CC=C(C3=C54)C=2)C=C1 UHVLDCDWBKWDDN-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- GPRIERYVMZVKTC-UHFFFAOYSA-N p-quaterphenyl Chemical group C1=CC=CC=C1C1=CC=C(C=2C=CC(=CC=2)C=2C=CC=CC=2)C=C1 GPRIERYVMZVKTC-UHFFFAOYSA-N 0.000 description 2
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 2
- RDOWQLZANAYVLL-UHFFFAOYSA-N phenanthridine Chemical compound C1=CC=C2C3=CC=CC=C3C=NC2=C1 RDOWQLZANAYVLL-UHFFFAOYSA-N 0.000 description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N pyridine Substances C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- XSCHRSMBECNVNS-UHFFFAOYSA-N quinoxaline Chemical compound N1=CC=NC2=CC=CC=C21 XSCHRSMBECNVNS-UHFFFAOYSA-N 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000010944 silver (metal) Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
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- 238000005215 recombination Methods 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical class [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 229910001631 strontium chloride Inorganic materials 0.000 description 1
- AHBGXTDRMVNFER-UHFFFAOYSA-L strontium dichloride Chemical compound [Cl-].[Cl-].[Sr+2] AHBGXTDRMVNFER-UHFFFAOYSA-L 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- YRGLXIVYESZPLQ-UHFFFAOYSA-I tantalum pentafluoride Chemical compound F[Ta](F)(F)(F)F YRGLXIVYESZPLQ-UHFFFAOYSA-I 0.000 description 1
- RBTVSNLYYIMMKS-UHFFFAOYSA-N tert-butyl 3-aminoazetidine-1-carboxylate;hydrochloride Chemical compound Cl.CC(C)(C)OC(=O)N1CC(N)C1 RBTVSNLYYIMMKS-UHFFFAOYSA-N 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- NZFNXWQNBYZDAQ-UHFFFAOYSA-N thioridazine hydrochloride Chemical compound Cl.C12=CC(SC)=CC=C2SC2=CC=CC=C2N1CCC1CCCCN1C NZFNXWQNBYZDAQ-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- HDUMBHAAKGUHAR-UHFFFAOYSA-J titanium(4+);disulfate Chemical compound [Ti+4].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O HDUMBHAAKGUHAR-UHFFFAOYSA-J 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- SXXNJJQVBPWGTP-UHFFFAOYSA-K tris[(4-methylquinolin-8-yl)oxy]alumane Chemical compound [Al+3].C1=CC=C2C(C)=CC=NC2=C1[O-].C1=CC=C2C(C)=CC=NC2=C1[O-].C1=CC=C2C(C)=CC=NC2=C1[O-] SXXNJJQVBPWGTP-UHFFFAOYSA-K 0.000 description 1
- ISNYUQWBWALXEY-OMIQOYQYSA-N tsg6xhx09r Chemical compound O([C@@H](C)C=1[C@@]23CN(C)CCO[C@]3(C3=CC[C@H]4[C@]5(C)CC[C@@](C4)(O)O[C@@]53[C@H](O)C2)CC=1)C(=O)C=1C(C)=CNC=1C ISNYUQWBWALXEY-OMIQOYQYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- ZOYIPGHJSALYPY-UHFFFAOYSA-K vanadium(iii) bromide Chemical compound [V+3].[Br-].[Br-].[Br-] ZOYIPGHJSALYPY-UHFFFAOYSA-K 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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Abstract
Description
化合物またはベンゾイミダゾール(benzoimidazole)化合物などの蛍光増白剤;1、4-ビス(2-メチルスチリル)ベンゼン、1、4-ビス(3-メチルスチリル)ベンゼン、1、4-ビス(4-メチルスチリル)ベンゼン、ジスチリルベンゼン、1、4-ビス(2-エチルスチリル)ベンジル、1、4-ビス(3-エチルスチリル)ベンゼン、1、4-ビス(2-メチルスチリル)-2-メチルベンゼンまたは1、4-ビス(2-メチルスチリル)-2-エチルベンゼンなどのようなジスチリルベンゼン(distyrylbenzene)化合物;2、5-ビス(4-メチルスチリル)ピラジン、2、5-ビス(4-エチルスチリル)ピラジン、2、5-ビス[2-(1-ナフチル)ビニル]ピラジン、2、5-ビス(4-メトキシスチリル)ピラジン、2、5-ビス[2-(4-ビフェニル)ビニル]ピラジンまたは2、5-ビス[2-(1-ピレニル)ビニル]ピラジンなどのジスチリルピラジン(distyrylpyrazine)化合物、1、4-フェニレンジメチルリジン、4、4'-フェニレンジメチルリジン、2、5-キシレンジメチルリジン、2、6-ナフチレンジメチルリジン、1、4-ビフェニレンジメチルリジン、1、4-パラ-ターフェニレンジメチルリジン、9、10-アントラセンジイルジメチルリジン(9、10-anthracenediyldimethylidine)または4、4'-(2、2-ジ-ティ-ブチルフェニルビニル)ビフェニル、4、4'-(2、2-ジフェニルビニル)ビフェニルなどのようなジメチルリジン(dimethylidine)化合物またはその誘導体、日本特許公開第1994-49079号または日本特許公開第1994-293778号公報などに開示されたシラナミン(silanamine)誘導体、日本特許公開第1994-279322号または日本特許公開第1994-279323号公報などに開示された多官能スチリル化合物、日本特許公開第1994-107648号または日本特許公開第1994-092947号公報などに開示されているオキサジアゾール誘導体、日本特許公開第1994-206865号公報などに開示されたアントラセン化合物、日本特許公開第1994-145146号公報などに開示されたオキシネート(oxynate)誘導体、日本特許公開第1992-96990号公報などに開示されたテトラフェニルブタジエン化合物、日本特許公開第1991-296595号公報などに開示された有機3官能化合物、日本特許公開第1990-191694号公報などに開示されたクマリン(coumarin)誘導体、日本特許公開第1990-196885号公報などに開示されたペリレン(perylene)誘導体、日本特許公開第1990-255789号公報などに開示されたナフタレン誘導体、日本特許公開第1990-289676号や日本特許公開第1990-88689号公報などに開示されたフタロペリノン(phthaloperynone)誘導体または日本特許公開第1990-250292号公報などに開示されたスチリルアミン誘導体なども低屈折層に含まれる電子受容性有機化合物として用いることができる。また、前記において、電子注入層は、例えば、LiFまたはCsFなどのような材料を用いて形成することもできる。
[N-(8-フルオランテニル)-N-フェニルアミノ]ビフェニル、4、4'-ビス[N-(2-ピレニル)-N-フェニルアミノ]ビフェニル、4、4'-ビス[N-(2-ペリレニル)-N-フェニルアミノ]ビフェニル、4、4'-ビス[N-(1-コロネニル)-N-フェニルアミノ]ビフェニル(4、4'-bis[N-(1-coronenyl)-N-phenylamino]biphenyl)、2、6-ビス(ジ-p-トリルアミノ)ナフタレン、2、6-ビス[ジ-(1-ナフチル)アミノ]ナフタレン、2、6-ビス[N-(1-ナフチル)-N-(2-ナフチル)アミノ]ナフタレン、4、4'-ビス[N、N-ジ(2-ナフチル)アミノ]ターフェニル、4、4'-ビス{N-フェニル-N-[4-(1-ナフチル)フェニル]アミノ}ビフェニル、4、4'-ビス[N-フェニル-N-(2-ピレニル)アミノ]ビフェニル、2、6-ビス[N、N-ジ-(2-ナフチル)アミノ]フルオレンまたは4、4'-ビス(N、N-ジ-p-トリルアミノ)ターフェニル、およびビス(N-1-ナフチル)(N-2-ナフチル)アミンなどのようなアリールアミン化合物が代表的に例示されるが、これに制限されるものではない。
反応器内でBPDA(3、3'、4、4'-Biphenyltetracarboxylic dianhydride)およびPDA(p-phenylene diamine)を縮合反応させて第1ポリアミック酸溶液(屈折率:約1.625)を合成し、別途の反応器にてBPDA(3、3'、4、4'-Biphenyltetracarboxylic dianhydride)およびTFMB(2、2'-Bis(trifluoromethyl)benzidine)を縮合反応させて第2ポリアミック酸溶液(屈折率:約1.56)を合成した。前記第1ポリアミック酸溶液と第2ポリアミック酸溶液を固形分重量基準として5:95の比率(第1ポリアミック酸:第2ポリアミック酸)で混合して、攪拌機を用いて16時間以上混合してフィルム形成用組成物を製造した。引き続き、製造されたフィルム形成用組成物を約20μm程度の厚さでガラス基板にスピンコーティングし、オーブンで約2℃/minの速度で加熱した後、80℃で15分、150℃で30分、220℃で30分および350℃で1時間の間維持してイミド化反応させてポリイミド基板(A)を合成した。前記基板(A)に対してHaze Meter HM-150を用いてASTM D1003に準じてヘイズを評価した結果、約5%であり、光透過率は約85%であった。
BPDA(3、3'、4、4'-Biphenyltetracarboxylic dianhydride)およびTFMB(2、2'-Bis(trifluoromethyl)benzidine)を縮合反応させて製造された第1ポリアミック酸溶液(屈折率:約1.56)およびFDA(2、2'-Bis-(3、4-Dicarboxyphenyl) hexafluoropropane dianhydride)およびTFMB(2、2'-Bis(trifluoromethyl)benzidine)を縮合反応させて製造された第2ポリアミック酸溶液(屈折率:約1.541)を固形分重量基準として5:95の比率(第1ポリアミック酸:第2ポリアミック酸)で混合して製造したフィルム形成用組成物を使用したことを除いては、製造例1と同様にしてポリイミド基板(B)を製造した。合成された基材フィルムに対してHaze Meter HM-150を用いてASTM D1003に準じてヘイズを評価した結果、約5.12%であり、光透過率は約86.4%であった。
BPDA(3、3'、4、4'-Biphenyltetracarboxylic dianhydride)およびTFMB(2、2'-Bis(trifluoromethyl)benzidine)を縮合反応させて製造された第1ポリアミック酸溶液(屈折率:約1.56)およびFDA(2、2'-Bis-(3、4-Dicarboxyphenyl) hexafluoropropane dianhydride)およびTFMB(2、2'-Bis(trifluoromethyl)benzidine)を縮合反応させて製造された第2ポリアミック酸溶液(屈折率:約1.541)を固形分重量基準として10:90の比率(第1ポリアミック酸:第2ポリアミック酸)で混合して製造したフィルム形成用組成物を使用したことを除いては、製造例1と同様にしてポリイミド基板(C)を製造した。合成された基材フィルムに対してHaze Meter HM-150を用いてASTM D1003に準じてヘイズを評価した結果、約16.44%であり、光透過率は約83.5%であった。
BPDA(3、3'、4、4'-Biphenyltetracarboxylic dianhydride)およびPDA(p-phenylene diamine)を縮合反応させて製造された第1ポリアミック酸溶液(屈折率:約1.625)およびBPDA(3、3'、4、4'-Biphenyltetracarboxylic dianhydride)およびTFMB(2、2'-Bis(trifluoromethyl)benzidine)を縮合反応させて製造された第2ポリアミック酸溶液(屈折率:約1.56)を固形分重量基準として10:90の比率(第1ポリアミック酸:第2ポリアミック酸)で混合し、さらに散乱性のない範囲の粒径を有する高屈折フィラー(rutile TiO2、屈折率:約2.8)を配合して製造されたフィルム形成用組成物を使用したことを除いては、製造例1と同様にしてポリイミド基板(D)を製造した。合成された基材フィルムに対してHaze Meter HM-150を用いてASTM D1003に準じてヘイズを評価した結果、約9%であり、光透過率は約81%であり、屈折率は約1.8程度であった。
FDA(2、2'-Bis-(3、4-Dicarboxyphenyl) hexafluoropropane dianhydride)およびTFMB(2、2'-Bis(trifluoromethyl)benzidine)を縮合反応して製造されたポリアミック酸溶液(屈折率:約1.541)をフィルム形成用組成物で使用したことを除いては、製造例1と同様にしてポリイミド基板(E)を製造した。合成された基材フィルムに対してHaze Meter HM-150を用いてASTM D1003に準じてヘイズを評価した結果、約1.2%であり、光透過率は約92%であった。
製造例1で製造されたガラス基板上に形成されたポリイミド基板(A)上に有機電子素子を形成した。ポリイミド基板(A)上に公知の素材を用いて正孔注入性透明電極層、正孔輸送層、発光波長が約380〜500nmの範囲内にある第1発光ユニット、n型有機半導体層、p型有機半導体層、発光波長が約500〜700nmの範囲内にある第2発光ユニット、正孔ブロック層、電子輸送層、電子注入層および電子注入性反射電極層を順次形成して素子領域を形成し、前記素子領域を適切な封止素材で封止して有機電子装置を製造した。製造された有機電子装置に対して公知の方式で量子効率を測定した結果、約35.4%程度であった。
製造例2で製造されたガラス基板上に形成されたポリイミド基板(B)上に有機電子素子を形成した。まず、前記ポリイミド基板(B)上にバリア層を形成した。バリア層は、ALD(Atomic Layer Deposition)方式で単独蒸着時に屈折率が約1.6〜1.8程度の範囲内であるAl2O3の層と単独蒸着時に屈折率が約2.0〜2.4程度の範囲内であるTiO2の層を交互に蒸着して、最終的に屈折率が約1.8程度となるように形成した。Al2O3の層は公知のALD方式にしたがって約200℃の温度で前駆体としてトリメチルアルミニウムの層と水(H2O)層を交互に吸着させて形成し、TiO2の層も公知されたALD方式により約200℃の温度で前駆体としてTiCl4の層と水(H2O)層を交互に吸着させて形成した。形成時に各Al2O3の層およびTiO2の層の厚さはそれぞれ約2nm〜5nmの範囲内となるようにして最終的に約40nm程度の厚さのバリア層を形成した。引き続き、バリア層上に公知の素材を用いて正孔注入性透明電極層、正孔輸送層、発光波長が約380〜500nmの範囲内にある第1発光ユニット、n型有機半導体層、p型有機半導体層、発光波長が約500〜700nmの範囲内にある第2発光ユニット、正孔ブロック層、電子輸送層、電子注入層および電子注入性反射電極層を順次形成して素子領域を形成して、前記素子領域を適切な封止素材で封止して有機電子装置を製造した。製造された有機電子装置に対して公知の方式で量子効率を測定した結果、約41.6%程度であった。
製造例3で製造されたポリイミド基板(C)を適用したことを除いては、実施例1と同様にして有機電子素子を形成した。製造された有機電子装置に対して公知の方式で量子効率を測定した結果、約41.6%程度であった。
製造例4で製造されたポリイミド基板(D)を適用したことを除いては、実施例1と同様にして有機電子素子を形成した。製造された有機電子装置に対して公知の方式で量子効率を測定した結果、約42%程度であった。
製造例5で製造されたポリイミド基板(E)を使用したことを除いては実施例1と同様にして有機電子素子を形成した。製造された有機電子装置に対して公知の方式で量子効率を測定した結果、約31.9%程度であった。
Claims (18)
- テトラカルボン酸二無水物およびジアミン化合物の縮合単位またはそのイミド化単位を含み、ヘイズが3〜30%の範囲内にある基材フィルムを含む有機電子素子用基板。
- 基材フィルムは、第1テトラカルボン酸二無水物および第1ジアミン化合物の縮合単位またはそのイミド化単位である第1単位と第2テトラカルボン酸二無水物および第2ジアミン化合物の縮合単位またはそのイミド化単位である第2単位を含む共重合体を含む、請求項1に記載の有機電子素子用基板。
- 基材フィルムは、第1テトラカルボン酸二無水物および第1ジアミン化合物の縮合単位またはそのイミド化単位である第1単位を含む第1重合体と第2テトラカルボン酸二無水物および第2ジアミン化合物の縮合単位またはそのイミド化単位である第2単位を含む第2重合体を含む、請求項1に記載の有機電子素子用基板。
- 第1単位の屈折率と第2単位の屈折率の差の絶対値が0.01以上である、請求項2または請求項3に記載の有機電子素子用基板。
- 第1単位に含まれる極性官能基のモル数と第2単位に含まれる極性官能基のモル数の差の絶対値が2以上である、請求項2または請求項3に記載の有機電子素子用基板。
- 極性官能基がハロゲン原子、ハロアルキル基、シアノ基、ニトロ基、アルコキシ基、シアネート基またはチオシアネート基である、請求項5に記載の有機電子素子用基板。
- 基材フィルムは、第2単位100重量部対比第1単位3重量部〜30重量部を含む、請求項1に記載の有機電子素子用基板。
- 基材フィルムは、550nm波長の光に対する屈折率が1.7以上である、請求項1に記載の有機電子素子用基板。
- 基材フィルムは、表面粗さ(RMS、Root Mean Square)が5nm以下である、請求項1に記載の有機電子素子用基板。
- 基材フィルム内の散乱性粒子の比率が10重量%以下である、請求項1に記載の有機電子素子用基板。
- 基材フィルムの表面に形成されており、550nm波長の光に対する屈折率が1.7以上である高屈折層をさらに含む、請求項1に記載の有機電子素子用基板。
- 高屈折層は無機物層である、請求項11に記載の有機電子素子用基板。
- 無機物層は、第1サブ層および第2サブ層の積層構造を含む、請求項12に記載の有機電子素子用基板。
- 第1サブ層の厚さと第2サブ層の厚さは7nm以下である、請求項13に記載の有機電子素子用基板。
- 第1サブ層の屈折率は、1.4〜1.9の範囲内、第2サブ層の屈折率は2.0〜2.6の範囲内である、請求項13に記載の有機電子素子用基板。
- 請求項1に記載された有機電子素子用基板;および前記基板の無機物層上に存在する第1電極層、有機物層および第2電極層を有する素子領域を含む、有機電子素子。
- 請求項16に記載された有機電子素子を含む、ディスプレイ用光源。
- 請求項16に記載された有機電子素子を含む、照明機器。
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JP6231206B2 (ja) | 2017-11-15 |
EP3016087A4 (en) | 2017-03-01 |
TWI598004B (zh) | 2017-09-01 |
US10090473B2 (en) | 2018-10-02 |
WO2015047041A1 (ko) | 2015-04-02 |
EP3016087B1 (en) | 2021-03-31 |
KR20150037691A (ko) | 2015-04-08 |
KR101928598B1 (ko) | 2018-12-12 |
KR101548881B1 (ko) | 2015-09-01 |
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CN105408948A (zh) | 2016-03-16 |
CN105408948B (zh) | 2018-09-18 |
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