JP6253070B2 - 有機電子素子用基板およびこの製造方法 - Google Patents
有機電子素子用基板およびこの製造方法 Download PDFInfo
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- JP6253070B2 JP6253070B2 JP2016533262A JP2016533262A JP6253070B2 JP 6253070 B2 JP6253070 B2 JP 6253070B2 JP 2016533262 A JP2016533262 A JP 2016533262A JP 2016533262 A JP2016533262 A JP 2016533262A JP 6253070 B2 JP6253070 B2 JP 6253070B2
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Images
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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Description
R1(R1 2SiO)nR1
AX(気体)+BY(気体) → AB(固体)+XY(気体)
基材フィルムであるPI(polyimide)フィルムに次の方式でバリアー層であるAl2O3層と弾性層であるMLD層(トリメチルアルミニウム(TMA)およびエチレングリコール(EG))の複合層、弾性係数:約20〜200GPa(23℃))を交互に形成した。PIフィルムをキャリア基板であるガラス基板上に位置させた。引き続き、MLD方式で前記弾性層を形成する過程とALD方式で前記バリアー層を形成する過程を繰り返して遂行した。前記においてバリアー層であるAl2O3層は単独蒸着時に屈折率が1.5〜1.8程度である物質であり、MLD層は単独蒸着時に屈折率が約1.45〜1.7の範囲内にある物質である。Al2O3の層は公知のALD方式にしたがって約200℃の温度で前駆体としてトリメチルアルミニウム層と水(H2O)層を交互に吸着させて形成した。また、前記MLD層も公知のMLD方式にしたがって約100℃の温度で前駆体としてトリメチルアルミニウムとエチレングリコールを交互に吸着させて形成した。形成された層の構造はAl2O3層(厚さ0.5〜30nm)/MLD層(厚さ200〜500nm)の構造が2.5回〜3回繰り返された構造と同じである。
実施例1と同じ方式で層を形成するものの、MLDおよびALDの形成サイクルを下記の式1を満足するように変更して弾性係数が25GPa〜130GPa範囲の有機電子素子用基板を含む有機電子素子を製造した。
0.2≦NA/(NA+NB)≦0.8
NAは基板に含まれたALD層の数を意味し、NBは基板に含まれたMLD層の数を意味する。
MLD層の代わりにトリビニルトリメチルシクロトリシロキサン(V3D3)を使ったiCVD層(弾性係数:約4〜8GPa(23℃)、屈折率:約1.5〜1.6)を弾性層に適用し、PIフィルムの表面またはバリアー層(Al2O3層)の表面で誘導し、Al2O3層(厚さ:0.5〜30nm)/iCVD層(厚さ200〜500nm)の積層構造を含む有機電子素子用基板を利用したことを除いては実施例1と同じ方式で有機電子素子を製造した。iCVD層は、単量体として前記トリビニルトリメチルシクロシロキサンを用い、開始剤としてターシャリーブチルパーオキサイド(TBP、97%、Aldrich)を用いて約250〜300℃の温度で維持されたフィラメントで前記単量体と開始剤の混合物で開始剤を熱分解させ、重合反応を温度が約30〜40℃程度で維持された前記PIフィルムの表面またはバリアー層(Al2O3)の表面で誘導した。
iCVD層を形成する単量体の種類および積層回数を下記の表1のように変更したことを除いては参考例1と同じ方式で製造された有機電子素子用基板およびこれを含む有機電子素子を製造した。
MLD層を形成せず、バリアー層だけを実施例1の弾性層と無機物層の合計厚さと同じ厚さで形成したことを除いては実施例1と同一に基板および有機電子素子を製造した。
実施例1〜6および比較例1で製造された有機電子素子を同一条件で駆動させた後、PIフィルムと無機物層界面および無機物層と電極層の界面での剥離および/またはクラックの発生を観察した。観察結果、比較例1の素子においては、PIフィルムと無機物層界面および無機物層と電極層の界面で剥離およびクラックが観察されたが、実施例1〜6の場合、このような欠陥が観察されなかった。
20 無機物層
30 弾性層
Claims (17)
- フレキシブル基材フィルム、前記基材フィルム上に存在する無機物層;および前記無機物層の上部、下部または内部に存在し、23℃の温度での弾性係数が20GPa〜400GPaである物質を含む弾性層を有し、無機物層と基材フィルムの屈折率差が1以下であり、無機物層は、多層構造であり、かつ厚さが7nmを超過する層を含まない、有機電子素子用基板。
- 基材フィルムはヘイズが3%〜30%の範囲内にある、請求項1に記載の有機電子素子用基板。
- 基材フィルムは、550nm波長の光に対する屈折率が1.7以上である、請求項1に記載の有機電子素子用基板。
- 無機物層はそれぞれ厚さが7nm以下である第1および第2サブ層を含む、請求項1に記載の有機電子素子用基板。
- 無機物層は厚さが10nm〜100nmの範囲内にある、請求項4に記載の有機電子素子用基板。
- 第1サブ層と第2サブ層は互いに接触した状態で積層されており、前記第1および第2サブ層は互いに異なる酸化物、窒化物または酸窒化物を含む、請求項4に記載の有機電子素子用基板。
- 第1サブ層の屈折率は、1.4〜1.9の範囲内にあり、第2サブ層の屈折率は2.0〜2.6の範囲内にある、請求項4に記載の有機電子素子用基板。
- 弾性層は、屈折率が1.7以下である、請求項1に記載の有機電子素子用基板。
- 弾性層は、TiO2、Si3N4、MgO、Al2O3、ZnOまたはZrO2を含む、請求項1に記載の有機電子素子用基板。
- 弾性層は、金属または非金属のキレート化合物およびアルキレングリコールを含むか、前記反応物を含むMLD層である、請求項1に記載の有機電子素子用基板。
- 請求項1に記載された有機電子素子用基板;および前記基板の無機物層上に存在する第1電極層、有機物層および第2電極層を有する素子領域を含む、有機電子素子。
- 請求項12に記載された有機電子素子を含む、ディスプレイ用光源。
- 請求項12に記載された有機電子素子を含む、照明機器。
- フレキシブル基材フィルム上に形成された無機物層の上部、下部または内部に弾性層を形成することを含む、請求項1に記載された有機電子素子用基板の製造方法。
- 無機物層は、ALD法を利用してそれぞれの厚さが7nm以下である第1および第2サブ層の積層構造を形成するものから製造される、請求項15に記載の有機電子素子用基板の製造方法。
- 弾性層はMLD法またはiCVD法を利用して形成するものである、請求項15に記載の有機電子素子用基板の製造方法。
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CN105431893A (zh) | 2016-03-23 |
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EP3016088B1 (en) | 2019-11-06 |
KR101816967B1 (ko) | 2018-01-09 |
US9741951B2 (en) | 2017-08-22 |
KR20150037670A (ko) | 2015-04-08 |
EP3016088A4 (en) | 2017-03-08 |
CN105431893B (zh) | 2018-01-26 |
TW201521261A (zh) | 2015-06-01 |
EP3016088A1 (en) | 2016-05-04 |
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