TW201528885A - 用於有機電子裝置之基板 - Google Patents
用於有機電子裝置之基板 Download PDFInfo
- Publication number
- TW201528885A TW201528885A TW103134119A TW103134119A TW201528885A TW 201528885 A TW201528885 A TW 201528885A TW 103134119 A TW103134119 A TW 103134119A TW 103134119 A TW103134119 A TW 103134119A TW 201528885 A TW201528885 A TW 201528885A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- unit
- substrate
- bis
- refractive index
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 81
- 229910010272 inorganic material Inorganic materials 0.000 claims description 66
- 239000011147 inorganic material Substances 0.000 claims description 66
- -1 diamine compound Chemical class 0.000 claims description 47
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims description 31
- 239000002245 particle Substances 0.000 claims description 28
- 229920000642 polymer Polymers 0.000 claims description 19
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 claims description 12
- 125000000524 functional group Chemical group 0.000 claims description 12
- 239000011368 organic material Substances 0.000 claims description 12
- 125000006158 tetracarboxylic acid group Chemical group 0.000 claims description 10
- 238000009833 condensation Methods 0.000 claims description 8
- 230000005494 condensation Effects 0.000 claims description 8
- 125000005843 halogen group Chemical group 0.000 claims description 3
- 150000002923 oximes Chemical class 0.000 claims description 3
- 229920001577 copolymer Polymers 0.000 claims description 2
- 125000006682 monohaloalkyl group Chemical group 0.000 claims description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 1
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate group Chemical group [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 claims 1
- 229910052717 sulfur Inorganic materials 0.000 claims 1
- 239000011593 sulfur Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 230000000704 physical effect Effects 0.000 abstract description 7
- 238000002834 transmittance Methods 0.000 abstract description 7
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 285
- 239000010408 film Substances 0.000 description 71
- 239000000463 material Substances 0.000 description 53
- 230000004888 barrier function Effects 0.000 description 36
- 238000000034 method Methods 0.000 description 35
- 229920001721 polyimide Polymers 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 239000000203 mixture Substances 0.000 description 15
- 238000002360 preparation method Methods 0.000 description 14
- 229910052757 nitrogen Inorganic materials 0.000 description 13
- NVKGJHAQGWCWDI-UHFFFAOYSA-N 4-[4-amino-2-(trifluoromethyl)phenyl]-3-(trifluoromethyl)aniline Chemical compound FC(F)(F)C1=CC(N)=CC=C1C1=CC=C(N)C=C1C(F)(F)F NVKGJHAQGWCWDI-UHFFFAOYSA-N 0.000 description 12
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 12
- 239000012790 adhesive layer Substances 0.000 description 12
- 239000004642 Polyimide Substances 0.000 description 11
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 11
- 239000000243 solution Substances 0.000 description 11
- 239000002253 acid Substances 0.000 description 10
- 238000000231 atomic layer deposition Methods 0.000 description 10
- 239000011230 binding agent Substances 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 10
- 238000006482 condensation reaction Methods 0.000 description 10
- 238000002347 injection Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 10
- 150000002894 organic compounds Chemical class 0.000 description 10
- 239000011521 glass Substances 0.000 description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 8
- 239000007983 Tris buffer Substances 0.000 description 8
- 238000007796 conventional method Methods 0.000 description 8
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 8
- 238000000605 extraction Methods 0.000 description 8
- 108010026466 polyproline Proteins 0.000 description 8
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 229910044991 metal oxide Inorganic materials 0.000 description 7
- 150000004706 metal oxides Chemical class 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 6
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 6
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 6
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 6
- 229910010413 TiO 2 Inorganic materials 0.000 description 6
- 239000004305 biphenyl Substances 0.000 description 6
- 239000000872 buffer Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 230000009477 glass transition Effects 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 229910000420 cerium oxide Inorganic materials 0.000 description 5
- 230000005525 hole transport Effects 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 5
- 230000035515 penetration Effects 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 4
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 4
- 235000010290 biphenyl Nutrition 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000013039 cover film Substances 0.000 description 4
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- 239000012044 organic layer Substances 0.000 description 4
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 4
- ODLMAHJVESYWTB-UHFFFAOYSA-N propylbenzene Chemical compound CCCC1=CC=CC=C1 ODLMAHJVESYWTB-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical group C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- NGQSLSMAEVWNPU-YTEMWHBBSA-N 1,2-bis[(e)-2-phenylethenyl]benzene Chemical compound C=1C=CC=CC=1/C=C/C1=CC=CC=C1\C=C\C1=CC=CC=C1 NGQSLSMAEVWNPU-YTEMWHBBSA-N 0.000 description 3
- UHXOHPVVEHBKKT-UHFFFAOYSA-N 1-(2,2-diphenylethenyl)-4-[4-(2,2-diphenylethenyl)phenyl]benzene Chemical group C=1C=C(C=2C=CC(C=C(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)C=CC=1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 UHXOHPVVEHBKKT-UHFFFAOYSA-N 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 3
- 229910001632 barium fluoride Inorganic materials 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229920000547 conjugated polymer Polymers 0.000 description 3
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical class C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000839 emulsion Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 125000001188 haloalkyl group Chemical group 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 3
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 3
- 239000001294 propane Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 2
- BCASZEAAHJEDAL-PHEQNACWSA-N 1,4-bis[(e)-2-(4-methylphenyl)ethenyl]benzene Chemical compound C1=CC(C)=CC=C1\C=C\C(C=C1)=CC=C1\C=C\C1=CC=C(C)C=C1 BCASZEAAHJEDAL-PHEQNACWSA-N 0.000 description 2
- DKKYOQYISDAQER-UHFFFAOYSA-N 3-[3-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=C(OC=3C=C(N)C=CC=3)C=CC=2)=C1 DKKYOQYISDAQER-UHFFFAOYSA-N 0.000 description 2
- JJYPMNFTHPTTDI-UHFFFAOYSA-N 3-methylaniline Chemical compound CC1=CC=CC(N)=C1 JJYPMNFTHPTTDI-UHFFFAOYSA-N 0.000 description 2
- HXWWMGJBPGRWRS-CMDGGOBGSA-N 4- -2-tert-butyl-6- -4h-pyran Chemical compound O1C(C(C)(C)C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(C(CCN2CCC3(C)C)(C)C)=C2C3=C1 HXWWMGJBPGRWRS-CMDGGOBGSA-N 0.000 description 2
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 2
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 description 2
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical compound [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical compound NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 description 2
- ONIBWKKTOPOVIA-BYPYZUCNSA-N L-Proline Chemical compound OC(=O)[C@@H]1CCCN1 ONIBWKKTOPOVIA-BYPYZUCNSA-N 0.000 description 2
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- KWYHDKDOAIKMQN-UHFFFAOYSA-N N,N,N',N'-tetramethylethylenediamine Chemical compound CN(C)CCN(C)C KWYHDKDOAIKMQN-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- 229920002367 Polyisobutene Polymers 0.000 description 2
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 2
- ONIBWKKTOPOVIA-UHFFFAOYSA-N Proline Natural products OC(=O)C1CCCN1 ONIBWKKTOPOVIA-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 2
- WDIHJSXYQDMJHN-UHFFFAOYSA-L barium chloride Chemical compound [Cl-].[Cl-].[Ba+2] WDIHJSXYQDMJHN-UHFFFAOYSA-L 0.000 description 2
- 229910001626 barium chloride Inorganic materials 0.000 description 2
- DZBUGLKDJFMEHC-UHFFFAOYSA-N benzoquinolinylidene Natural products C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Chemical compound [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- WDECIBYCCFPHNR-UHFFFAOYSA-N chrysene Chemical compound C1=CC=CC2=CC=C3C4=CC=CC=C4C=CC3=C21 WDECIBYCCFPHNR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- VPUGDVKSAQVFFS-UHFFFAOYSA-N coronene Chemical compound C1=C(C2=C34)C=CC3=CC=C(C=C3)C4=C4C3=CC=C(C=C3)C4=C2C3=C1 VPUGDVKSAQVFFS-UHFFFAOYSA-N 0.000 description 2
- XLJMAIOERFSOGZ-UHFFFAOYSA-N cyanic acid Chemical compound OC#N XLJMAIOERFSOGZ-UHFFFAOYSA-N 0.000 description 2
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229940018564 m-phenylenediamine Drugs 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- WLDXVGCMDLRPHA-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline;9-phenylcarbazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2C2=CC=CC=C21.C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 WLDXVGCMDLRPHA-UHFFFAOYSA-N 0.000 description 2
- RNVCVTLRINQCPJ-UHFFFAOYSA-N o-toluidine Chemical compound CC1=CC=CC=C1N RNVCVTLRINQCPJ-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- MIVZUXGHPJSKRI-UHFFFAOYSA-N pentane-1,1,1,2-tetracarboxylic acid Chemical compound CCCC(C(O)=O)C(C(O)=O)(C(O)=O)C(O)=O MIVZUXGHPJSKRI-UHFFFAOYSA-N 0.000 description 2
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 2
- RDOWQLZANAYVLL-UHFFFAOYSA-N phenanthridine Chemical compound C1=CC=C2C3=CC=CC=C3C=NC2=C1 RDOWQLZANAYVLL-UHFFFAOYSA-N 0.000 description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
- XSCHRSMBECNVNS-UHFFFAOYSA-N quinoxaline Chemical compound N1=CC=NC2=CC=CC=C21 XSCHRSMBECNVNS-UHFFFAOYSA-N 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 235000021286 stilbenes Nutrition 0.000 description 2
- 125000005504 styryl group Chemical group 0.000 description 2
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- YGLVWOUNCXBPJF-UHFFFAOYSA-N (2,3,4,5-tetraphenylcyclopenta-1,4-dien-1-yl)benzene Chemical compound C1=CC=CC=C1C1C(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)C(C=2C=CC=CC=2)=C1C1=CC=CC=C1 YGLVWOUNCXBPJF-UHFFFAOYSA-N 0.000 description 1
- UWRZIZXBOLBCON-VOTSOKGWSA-N (e)-2-phenylethenamine Chemical class N\C=C\C1=CC=CC=C1 UWRZIZXBOLBCON-VOTSOKGWSA-N 0.000 description 1
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- OURODNXVJUWPMZ-UHFFFAOYSA-N 1,2-diphenylanthracene Chemical compound C1=CC=CC=C1C1=CC=C(C=C2C(C=CC=C2)=C2)C2=C1C1=CC=CC=C1 OURODNXVJUWPMZ-UHFFFAOYSA-N 0.000 description 1
- YBQZXXMEJHZYMB-UHFFFAOYSA-N 1,2-diphenylhydrazine Chemical compound C=1C=CC=CC=1NNC1=CC=CC=C1 YBQZXXMEJHZYMB-UHFFFAOYSA-N 0.000 description 1
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 1
- KLCLIOISYBHYDZ-UHFFFAOYSA-N 1,4,4-triphenylbuta-1,3-dienylbenzene Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)=CC=C(C=1C=CC=CC=1)C1=CC=CC=C1 KLCLIOISYBHYDZ-UHFFFAOYSA-N 0.000 description 1
- SWYYRSGBEBXIRE-UHFFFAOYSA-N 1,4-bis[2-(3-ethylphenyl)ethenyl]benzene Chemical compound CCC1=CC=CC(C=CC=2C=CC(C=CC=3C=C(CC)C=CC=3)=CC=2)=C1 SWYYRSGBEBXIRE-UHFFFAOYSA-N 0.000 description 1
- XBDQJALUKGQTAV-UHFFFAOYSA-N 1,4-bis[2-(3-methylphenyl)ethenyl]benzene Chemical compound CC1=CC=CC(C=CC=2C=CC(C=CC=3C=C(C)C=CC=3)=CC=2)=C1 XBDQJALUKGQTAV-UHFFFAOYSA-N 0.000 description 1
- XJKSTNDFUHDPQJ-UHFFFAOYSA-N 1,4-diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=C(C=2C=CC=CC=2)C=C1 XJKSTNDFUHDPQJ-UHFFFAOYSA-N 0.000 description 1
- 125000001140 1,4-phenylene group Chemical group [H]C1=C([H])C([*:2])=C([H])C([H])=C1[*:1] 0.000 description 1
- ZMLPKJYZRQZLDA-UHFFFAOYSA-N 1-(2-phenylethenyl)-4-[4-(2-phenylethenyl)phenyl]benzene Chemical group C=1C=CC=CC=1C=CC(C=C1)=CC=C1C(C=C1)=CC=C1C=CC1=CC=CC=C1 ZMLPKJYZRQZLDA-UHFFFAOYSA-N 0.000 description 1
- UVHXEHGUEKARKZ-UHFFFAOYSA-N 1-ethenylanthracene Chemical compound C1=CC=C2C=C3C(C=C)=CC=CC3=CC2=C1 UVHXEHGUEKARKZ-UHFFFAOYSA-N 0.000 description 1
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 description 1
- GUPMCMZMDAGSPF-UHFFFAOYSA-N 1-phenylbuta-1,3-dienylbenzene Chemical compound C=1C=CC=CC=1[C](C=C[CH2])C1=CC=CC=C1 GUPMCMZMDAGSPF-UHFFFAOYSA-N 0.000 description 1
- WCZNKVPCIFMXEQ-UHFFFAOYSA-N 2,3,5,6-tetramethylbenzene-1,4-diamine Chemical compound CC1=C(C)C(N)=C(C)C(C)=C1N WCZNKVPCIFMXEQ-UHFFFAOYSA-N 0.000 description 1
- VEPOHXYIFQMVHW-XOZOLZJESA-N 2,3-dihydroxybutanedioic acid (2S,3S)-3,4-dimethyl-2-phenylmorpholine Chemical compound OC(C(O)C(O)=O)C(O)=O.C[C@H]1[C@@H](OCCN1C)c1ccccc1 VEPOHXYIFQMVHW-XOZOLZJESA-N 0.000 description 1
- ZVDSMYGTJDFNHN-UHFFFAOYSA-N 2,4,6-trimethylbenzene-1,3-diamine Chemical compound CC1=CC(C)=C(N)C(C)=C1N ZVDSMYGTJDFNHN-UHFFFAOYSA-N 0.000 description 1
- PAJSTGVSGZWCGO-UHFFFAOYSA-N 2,5-bis[2-(4-ethylphenyl)ethenyl]pyrazine Chemical compound C1=CC(CC)=CC=C1C=CC(N=C1)=CN=C1C=CC1=CC=C(CC)C=C1 PAJSTGVSGZWCGO-UHFFFAOYSA-N 0.000 description 1
- UUNIOFWUJYBVGQ-UHFFFAOYSA-N 2-amino-4-(3,4-dimethoxyphenyl)-10-fluoro-4,5,6,7-tetrahydrobenzo[1,2]cyclohepta[6,7-d]pyran-3-carbonitrile Chemical compound C1=C(OC)C(OC)=CC=C1C1C(C#N)=C(N)OC2=C1CCCC1=CC=C(F)C=C12 UUNIOFWUJYBVGQ-UHFFFAOYSA-N 0.000 description 1
- TZUPZYHCGXBTIJ-UHFFFAOYSA-N 2-ethyl-1,4-bis[2-(2-methylphenyl)ethenyl]benzene Chemical compound C=1C=C(C=CC=2C(=CC=CC=2)C)C(CC)=CC=1C=CC1=CC=CC=C1C TZUPZYHCGXBTIJ-UHFFFAOYSA-N 0.000 description 1
- SVNTXZRQFPYYHV-UHFFFAOYSA-N 2-methyl-1,4-bis[2-(2-methylphenyl)ethenyl]benzene Chemical compound CC1=CC=CC=C1C=CC(C=C1C)=CC=C1C=CC1=CC=CC=C1C SVNTXZRQFPYYHV-UHFFFAOYSA-N 0.000 description 1
- BNOYUUYVUISCFV-UHFFFAOYSA-N 2-n,2-n,6-n,6-n-tetrakis(4-methylphenyl)anthracene-2,6-diamine Chemical compound C1=CC(C)=CC=C1N(C=1C=C2C=C3C=CC(=CC3=CC2=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 BNOYUUYVUISCFV-UHFFFAOYSA-N 0.000 description 1
- MATLFWDVOBGZFG-UHFFFAOYSA-N 2-n,2-n,6-n,6-n-tetranaphthalen-1-ylnaphthalene-2,6-diamine Chemical compound C1=CC=C2C(N(C=3C=C4C=CC(=CC4=CC=3)N(C=3C4=CC=CC=C4C=CC=3)C=3C4=CC=CC=C4C=CC=3)C=3C4=CC=CC=C4C=CC=3)=CC=CC2=C1 MATLFWDVOBGZFG-UHFFFAOYSA-N 0.000 description 1
- UAIUNKRWKOVEES-UHFFFAOYSA-N 3,3',5,5'-tetramethylbenzidine Chemical compound CC1=C(N)C(C)=CC(C=2C=C(C)C(N)=C(C)C=2)=C1 UAIUNKRWKOVEES-UHFFFAOYSA-N 0.000 description 1
- IDFBAZYYEXBGJO-UHFFFAOYSA-N 3,3,6,6-tetramethylcyclohexa-1,4-diene Chemical group CC1(C)C=CC(C)(C)C=C1 IDFBAZYYEXBGJO-UHFFFAOYSA-N 0.000 description 1
- OLQWMCSSZKNOLQ-UHFFFAOYSA-N 3-(2,5-dioxooxolan-3-yl)oxolane-2,5-dione Chemical compound O=C1OC(=O)CC1C1C(=O)OC(=O)C1 OLQWMCSSZKNOLQ-UHFFFAOYSA-N 0.000 description 1
- LXJLFVRAWOOQDR-UHFFFAOYSA-N 3-(3-aminophenoxy)aniline Chemical compound NC1=CC=CC(OC=2C=C(N)C=CC=2)=C1 LXJLFVRAWOOQDR-UHFFFAOYSA-N 0.000 description 1
- KRPRVQWGKLEFKN-UHFFFAOYSA-N 3-(3-aminopropoxy)propan-1-amine Chemical compound NCCCOCCCN KRPRVQWGKLEFKN-UHFFFAOYSA-N 0.000 description 1
- CXMYWOCYTPKBPP-UHFFFAOYSA-N 3-(3-hydroxypropylamino)propan-1-ol Chemical compound OCCCNCCCO CXMYWOCYTPKBPP-UHFFFAOYSA-N 0.000 description 1
- ZBMISJGHVWNWTE-UHFFFAOYSA-N 3-(4-aminophenoxy)aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(N)=C1 ZBMISJGHVWNWTE-UHFFFAOYSA-N 0.000 description 1
- CKOFBUUFHALZGK-UHFFFAOYSA-N 3-[(3-aminophenyl)methyl]aniline Chemical compound NC1=CC=CC(CC=2C=C(N)C=CC=2)=C1 CKOFBUUFHALZGK-UHFFFAOYSA-N 0.000 description 1
- WUNJTAXJOVRRAN-UHFFFAOYSA-N 3-[1-(3-aminophenyl)-9H-fluoren-2-yl]aniline Chemical compound NC=1C=C(C=CC=1)C1=C(C=2CC3=CC=CC=C3C=2C=C1)C1=CC(=CC=C1)N WUNJTAXJOVRRAN-UHFFFAOYSA-N 0.000 description 1
- ANOPCGQVRXJHHD-UHFFFAOYSA-N 3-[3-(3-aminopropyl)-2,4,8,10-tetraoxaspiro[5.5]undecan-9-yl]propan-1-amine Chemical compound C1OC(CCCN)OCC21COC(CCCN)OC2 ANOPCGQVRXJHHD-UHFFFAOYSA-N 0.000 description 1
- NYRFBMFAUFUULG-UHFFFAOYSA-N 3-[4-[2-[4-(3-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=C(N)C=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=CC(N)=C1 NYRFBMFAUFUULG-UHFFFAOYSA-N 0.000 description 1
- MGENSHRLAKPCSM-UHFFFAOYSA-N 3-methylcyclohexane-1,1,2,2-tetracarboxylic acid Chemical compound CC1CCCC(C(O)=O)(C(O)=O)C1(C(O)=O)C(O)=O MGENSHRLAKPCSM-UHFFFAOYSA-N 0.000 description 1
- WECDUOXQLAIPQW-UHFFFAOYSA-N 4,4'-Methylene bis(2-methylaniline) Chemical compound C1=C(N)C(C)=CC(CC=2C=C(C)C(N)=CC=2)=C1 WECDUOXQLAIPQW-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 1
- TWISHTANSAOCNX-UHFFFAOYSA-N 4-(1,1,1,3,3,3-hexafluoropropan-2-yl)phthalic acid Chemical compound OC(=O)C1=CC=C(C(C(F)(F)F)C(F)(F)F)C=C1C(O)=O TWISHTANSAOCNX-UHFFFAOYSA-N 0.000 description 1
- YARZEPAVWOMMHZ-UHFFFAOYSA-N 4-(3,4-dicarboxy-4-phenylcyclohexa-1,5-dien-1-yl)phthalic acid Chemical compound OC(=O)C1C=C(C=2C=C(C(C(O)=O)=CC=2)C(O)=O)C=CC1(C(O)=O)C1=CC=CC=C1 YARZEPAVWOMMHZ-UHFFFAOYSA-N 0.000 description 1
- QNLCDRXVEPWSBQ-UHFFFAOYSA-N 4-(4,5-dicarboxy-5-phenylcyclohexa-1,3-dien-1-yl)phthalic acid Chemical compound OC(=O)C1=CC=C(C=2C=C(C(C(O)=O)=CC=2)C(O)=O)CC1(C(O)=O)C1=CC=CC=C1 QNLCDRXVEPWSBQ-UHFFFAOYSA-N 0.000 description 1
- NWIVYGKSHSJHEF-UHFFFAOYSA-N 4-[(4-amino-3,5-diethylphenyl)methyl]-2,6-diethylaniline Chemical compound CCC1=C(N)C(CC)=CC(CC=2C=C(CC)C(N)=C(CC)C=2)=C1 NWIVYGKSHSJHEF-UHFFFAOYSA-N 0.000 description 1
- OMHOXRVODFQGCA-UHFFFAOYSA-N 4-[(4-amino-3,5-dimethylphenyl)methyl]-2,6-dimethylaniline Chemical compound CC1=C(N)C(C)=CC(CC=2C=C(C)C(N)=C(C)C=2)=C1 OMHOXRVODFQGCA-UHFFFAOYSA-N 0.000 description 1
- FLNVGZMDLLIECD-UHFFFAOYSA-N 4-[(4-amino-3-methyl-5-propan-2-ylphenyl)methyl]-2-methyl-6-propan-2-ylaniline Chemical compound CC1=C(N)C(C(C)C)=CC(CC=2C=C(C(N)=C(C)C=2)C(C)C)=C1 FLNVGZMDLLIECD-UHFFFAOYSA-N 0.000 description 1
- ASNOFHCTUSIHOM-UHFFFAOYSA-N 4-[10-(4-aminophenyl)anthracen-9-yl]aniline Chemical compound C1=CC(N)=CC=C1C(C1=CC=CC=C11)=C(C=CC=C2)C2=C1C1=CC=C(N)C=C1 ASNOFHCTUSIHOM-UHFFFAOYSA-N 0.000 description 1
- WUPRYUDHUFLKFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=CC(N)=CC=2)=C1 WUPRYUDHUFLKFL-UHFFFAOYSA-N 0.000 description 1
- HHLMWQDRYZAENA-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)(C(F)(F)F)C(F)(F)F)C=C1 HHLMWQDRYZAENA-UHFFFAOYSA-N 0.000 description 1
- KMKWGXGSGPYISJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 description 1
- AHDTYXOIJHCGKH-UHFFFAOYSA-N 4-[[4-(dimethylamino)-2-methylphenyl]-phenylmethyl]-n,n,3-trimethylaniline Chemical compound CC1=CC(N(C)C)=CC=C1C(C=1C(=CC(=CC=1)N(C)C)C)C1=CC=CC=C1 AHDTYXOIJHCGKH-UHFFFAOYSA-N 0.000 description 1
- KZTROCYBPMKGAW-UHFFFAOYSA-N 4-[[4-amino-3,5-di(propan-2-yl)phenyl]methyl]-2,6-di(propan-2-yl)aniline Chemical compound CC(C)C1=C(N)C(C(C)C)=CC(CC=2C=C(C(N)=C(C(C)C)C=2)C(C)C)=C1 KZTROCYBPMKGAW-UHFFFAOYSA-N 0.000 description 1
- OYUKRQOCPFZNHR-UHFFFAOYSA-N 4-methylquinolin-8-ol Chemical compound C1=CC=C2C(C)=CC=NC2=C1O OYUKRQOCPFZNHR-UHFFFAOYSA-N 0.000 description 1
- WXAIEIRYBSKHDP-UHFFFAOYSA-N 4-phenyl-n-(4-phenylphenyl)-n-[4-[4-(4-phenyl-n-(4-phenylphenyl)anilino)phenyl]phenyl]aniline Chemical compound C1=CC=CC=C1C1=CC=C(N(C=2C=CC(=CC=2)C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC=CC=2)C=C1 WXAIEIRYBSKHDP-UHFFFAOYSA-N 0.000 description 1
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 1
- QQGYZOYWNCKGEK-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)oxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC=2C=C3C(=O)OC(C3=CC=2)=O)=C1 QQGYZOYWNCKGEK-UHFFFAOYSA-N 0.000 description 1
- ZHBXLZQQVCDGPA-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)sulfonyl]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(S(=O)(=O)C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 ZHBXLZQQVCDGPA-UHFFFAOYSA-N 0.000 description 1
- CFNMUZCFSDMZPQ-GHXNOFRVSA-N 7-[(z)-3-methyl-4-(4-methyl-5-oxo-2h-furan-2-yl)but-2-enoxy]chromen-2-one Chemical compound C=1C=C2C=CC(=O)OC2=CC=1OC/C=C(/C)CC1OC(=O)C(C)=C1 CFNMUZCFSDMZPQ-GHXNOFRVSA-N 0.000 description 1
- WEXXGZNCUPTRFZ-UHFFFAOYSA-N 9-phenylcarbazole Chemical compound C1(=CC=CC=C1)N1C2=CC=CC=C2C=2C=CC=CC12.C1(=CC=CC=C1)N1C2=CC=CC=C2C=2C=CC=CC12 WEXXGZNCUPTRFZ-UHFFFAOYSA-N 0.000 description 1
- VESMRDNBVZOIEN-UHFFFAOYSA-N 9h-carbazole-1,2-diamine Chemical compound C1=CC=C2C3=CC=C(N)C(N)=C3NC2=C1 VESMRDNBVZOIEN-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminium flouride Chemical compound F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- LVHOUUBUGYQWFB-UHFFFAOYSA-N C1(=CC=C2C=CC3=CC=CC4=CC=C1C2=C34)C=CC3=NC=C(N=C3)C=CC3=CC=C4C=CC2=CC=CC1=CC=C3C4=C21.N2(C=CC1=CC=CC=C21)C=CC2=NC=C(N=C2)C=CN2C=CC1=CC=CC=C21 Chemical compound C1(=CC=C2C=CC3=CC=CC4=CC=C1C2=C34)C=CC3=NC=C(N=C3)C=CC3=CC=C4C=CC2=CC=CC1=CC=C3C4=C21.N2(C=CC1=CC=CC=C21)C=CC2=NC=C(N=C2)C=CN2C=CC1=CC=CC=C21 LVHOUUBUGYQWFB-UHFFFAOYSA-N 0.000 description 1
- MTYZNJXNXMZCIE-UHFFFAOYSA-N C1(=CC=CC2=CC=CC=C12)C=CC1=NC=C(N=C1)C=CC1=CC=CC2=CC=CC=C12.C1(=CC=CC2=CC=CC=C12)C=CC1=NC=C(N=C1)C=CC1=CC=CC2=CC=CC=C12 Chemical compound C1(=CC=CC2=CC=CC=C12)C=CC1=NC=C(N=C1)C=CC1=CC=CC2=CC=CC=C12.C1(=CC=CC2=CC=CC=C12)C=CC1=NC=C(N=C1)C=CC1=CC=CC2=CC=CC=C12 MTYZNJXNXMZCIE-UHFFFAOYSA-N 0.000 description 1
- CIJFIZOWCCKYIA-UHFFFAOYSA-N C1(=CC=CC2=CC=CC=C12)N(C1=CC=CC=C1)C1=CC=CC2=C(C=CC=C12)N(C1=CC=CC2=CC=CC=C12)C1=CC=CC=C1.C1(=CC=CC2=CC=CC=C12)N(C1=CC=CC=C1)C1=CC=CC2=C(C=CC=C12)N(C1=CC=CC2=CC=CC=C12)C1=CC=CC=C1 Chemical compound C1(=CC=CC2=CC=CC=C12)N(C1=CC=CC=C1)C1=CC=CC2=C(C=CC=C12)N(C1=CC=CC2=CC=CC=C12)C1=CC=CC=C1.C1(=CC=CC2=CC=CC=C12)N(C1=CC=CC=C1)C1=CC=CC2=C(C=CC=C12)N(C1=CC=CC2=CC=CC=C12)C1=CC=CC=C1 CIJFIZOWCCKYIA-UHFFFAOYSA-N 0.000 description 1
- FTZRJNRAWFVQQU-UHFFFAOYSA-N C1(=CC=CC=C1)N(C1=CC=C(C=C1)C1=CC=C(C=C1)N(C1=CC=C(C=C1)OC)C1=CC=CC=C1)C1=CC=C(C=C1)OC.C1(=CC=CC=C1)N(C1=CC=C(C=C1)C1=CC=C(C=C1)N(C1=CC=C(C=C1)OC)C1=CC=CC=C1)C1=CC=C(C=C1)OC Chemical group C1(=CC=CC=C1)N(C1=CC=C(C=C1)C1=CC=C(C=C1)N(C1=CC=C(C=C1)OC)C1=CC=CC=C1)C1=CC=C(C=C1)OC.C1(=CC=CC=C1)N(C1=CC=C(C=C1)C1=CC=C(C=C1)N(C1=CC=C(C=C1)OC)C1=CC=CC=C1)C1=CC=C(C=C1)OC FTZRJNRAWFVQQU-UHFFFAOYSA-N 0.000 description 1
- NFXSISLGBILRPY-UHFFFAOYSA-N C1(=CC=CC=C1)N(C1=CC=C(C=C1)C1=CC=CC2=CC=CC=C12)C1=CC=C(C=C1)C1=CC=C(C=C1)N(C1=CC=CC=C1)C1=CC=C(C=C1)C1=CC=CC2=CC=CC=C12.C1(=CC=CC=C1)N(C1=CC=C(C=C1)C1=CC=CC2=CC=CC=C12)C1=C(C=CC=C1)C1=CC=CC=C1 Chemical group C1(=CC=CC=C1)N(C1=CC=C(C=C1)C1=CC=CC2=CC=CC=C12)C1=CC=C(C=C1)C1=CC=C(C=C1)N(C1=CC=CC=C1)C1=CC=C(C=C1)C1=CC=CC2=CC=CC=C12.C1(=CC=CC=C1)N(C1=CC=C(C=C1)C1=CC=CC2=CC=CC=C12)C1=C(C=CC=C1)C1=CC=CC=C1 NFXSISLGBILRPY-UHFFFAOYSA-N 0.000 description 1
- MSDMPJCOOXURQD-UHFFFAOYSA-N C545T Chemical compound C1=CC=C2SC(C3=CC=4C=C5C6=C(C=4OC3=O)C(C)(C)CCN6CCC5(C)C)=NC2=C1 MSDMPJCOOXURQD-UHFFFAOYSA-N 0.000 description 1
- WFLOFEOFRYPJED-UHFFFAOYSA-N CC(=O)CC([CH2-])=O Chemical compound CC(=O)CC([CH2-])=O WFLOFEOFRYPJED-UHFFFAOYSA-N 0.000 description 1
- TXSIXFDNGAAQOO-UHFFFAOYSA-N CC1=C(C=CC2=CC=C(C=C2)C=CC2=C(C=CC=C2)C)C=CC=C1.CC1=C(C=CC2=CC=C(C=C2)C=CC2=C(C=CC=C2)C)C=CC=C1 Chemical compound CC1=C(C=CC2=CC=C(C=C2)C=CC2=C(C=CC=C2)C)C=CC=C1.CC1=C(C=CC2=CC=C(C=C2)C=CC2=C(C=CC=C2)C)C=CC=C1 TXSIXFDNGAAQOO-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910020366 ClO 4 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910021595 Copper(I) iodide Inorganic materials 0.000 description 1
- VMQMZMRVKUZKQL-UHFFFAOYSA-N Cu+ Chemical compound [Cu+] VMQMZMRVKUZKQL-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 1
- MPCRDALPQLDDFX-UHFFFAOYSA-L Magnesium perchlorate Chemical compound [Mg+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O MPCRDALPQLDDFX-UHFFFAOYSA-L 0.000 description 1
- 101100496858 Mus musculus Colec12 gene Proteins 0.000 description 1
- DWHUCVHMSFNQFI-UHFFFAOYSA-N N-[4-[4-(N-coronen-1-ylanilino)phenyl]phenyl]-N-phenylcoronen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=C3C=CC4=CC=C5C=CC6=CC=C(C7=C6C5=C4C3=C72)C=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=C4C=CC5=CC=C6C=CC7=CC=C(C8=C7C6=C5C4=C83)C=2)C=C1 DWHUCVHMSFNQFI-UHFFFAOYSA-N 0.000 description 1
- ZKTNKCQUXVLLQF-UHFFFAOYSA-N N-[4-[4-(N-naphthalen-2-ylanilino)phenyl]phenyl]-N-phenylnaphthalen-2-amine Chemical group C1=C(C=CC2=CC=CC=C12)N(C1=CC=CC=C1)C1=CC=C(C=C1)C1=CC=C(C=C1)N(C1=CC2=CC=CC=C2C=C1)C1=CC=CC=C1.C1=C(C=CC2=CC=CC=C12)N(C1=CC=CC=C1)C1=CC=C(C=C1)C1=CC=C(C=C1)N(C1=CC2=CC=CC=C2C=C1)C1=CC=CC=C1 ZKTNKCQUXVLLQF-UHFFFAOYSA-N 0.000 description 1
- QVCHUIMDQFILIV-UHFFFAOYSA-N N-[4-[4-[N-(1H-inden-2-yl)anilino]phenyl]phenyl]-N-phenyl-1H-inden-2-amine Chemical group C1C(=CC2=CC=CC=C12)N(C1=CC=CC=C1)C1=CC=C(C=C1)C1=CC=C(C=C1)N(C=1CC2=CC=CC=C2C=1)C1=CC=CC=C1 QVCHUIMDQFILIV-UHFFFAOYSA-N 0.000 description 1
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 description 1
- IPSTVJHBBNUCRH-UHFFFAOYSA-N NC1=CC=C(OC2=CC=C(C=C2)C=2C3=CC=CC=C3C(=C3C=CC=CC23)C2=CC=C(C=C2)OC2=CC=C(C=C2)N)C=C1 Chemical compound NC1=CC=C(OC2=CC=C(C=C2)C=2C3=CC=CC=C3C(=C3C=CC=CC23)C2=CC=C(C=C2)OC2=CC=C(C=C2)N)C=C1 IPSTVJHBBNUCRH-UHFFFAOYSA-N 0.000 description 1
- SCECHYBTQMOHQK-UHFFFAOYSA-N NC=1C=C(OC2=CC=C(C=C2)C=2C3=CC=CC=C3C(=C3C=CC=CC23)C2=CC=C(C=C2)OC2=CC(=CC=C2)N)C=CC1 Chemical compound NC=1C=C(OC2=CC=C(C=C2)C=2C3=CC=CC=C3C(=C3C=CC=CC23)C2=CC=C(C=C2)OC2=CC(=CC=C2)N)C=CC1 SCECHYBTQMOHQK-UHFFFAOYSA-N 0.000 description 1
- 229930192627 Naphthoquinone Natural products 0.000 description 1
- 229910019800 NbF 5 Inorganic materials 0.000 description 1
- 241000080590 Niso Species 0.000 description 1
- 108010039918 Polylysine Proteins 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 1
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 1
- QLBRROYTTDFLDX-UHFFFAOYSA-N [3-(aminomethyl)cyclohexyl]methanamine Chemical compound NCC1CCCC(CN)C1 QLBRROYTTDFLDX-UHFFFAOYSA-N 0.000 description 1
- GENZLHCFIPDZNJ-UHFFFAOYSA-N [In+3].[O-2].[Mg+2] Chemical compound [In+3].[O-2].[Mg+2] GENZLHCFIPDZNJ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000323 aluminium silicate Inorganic materials 0.000 description 1
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical compound [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 1
- 150000005010 aminoquinolines Chemical class 0.000 description 1
- ZXRIZGIQPMMOPC-UHFFFAOYSA-N aniline 1,1,1,3,3,3-hexafluoropropane Chemical compound FC(CC(F)(F)F)(F)F.NC=1C=CC=CC1 ZXRIZGIQPMMOPC-UHFFFAOYSA-N 0.000 description 1
- 125000005577 anthracene group Chemical group 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 150000004984 aromatic diamines Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 1
- OOULUYZFLXDWDQ-UHFFFAOYSA-L barium perchlorate Chemical compound [Ba+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O OOULUYZFLXDWDQ-UHFFFAOYSA-L 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- 125000005605 benzo group Chemical group 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- WGEFECGEFUFIQW-UHFFFAOYSA-L calcium dibromide Chemical compound [Ca+2].[Br-].[Br-] WGEFECGEFUFIQW-UHFFFAOYSA-L 0.000 description 1
- VZFAZKACJSVHPW-UHFFFAOYSA-L calcium hydron trifluoride Chemical compound [H+].[F-].[F-].[F-].[Ca++] VZFAZKACJSVHPW-UHFFFAOYSA-L 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- CQGVSILDZJUINE-UHFFFAOYSA-N cerium;hydrate Chemical compound O.[Ce] CQGVSILDZJUINE-UHFFFAOYSA-N 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- IOJUPLGTWVMSFF-UHFFFAOYSA-N cyclobenzothiazole Natural products C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 1
- GEQHKFFSPGPGLN-UHFFFAOYSA-N cyclohexane-1,3-diamine Chemical compound NC1CCCC(N)C1 GEQHKFFSPGPGLN-UHFFFAOYSA-N 0.000 description 1
- VKIRRGRTJUUZHS-UHFFFAOYSA-N cyclohexane-1,4-diamine Chemical compound NC1CCC(N)CC1 VKIRRGRTJUUZHS-UHFFFAOYSA-N 0.000 description 1
- AVKNGPAMCBSNSO-UHFFFAOYSA-N cyclohexylmethanamine Chemical compound NCC1CCCCC1 AVKNGPAMCBSNSO-UHFFFAOYSA-N 0.000 description 1
- FGQOVSPPSXYIBT-UHFFFAOYSA-N cyclopropane-1,1,2,2-tetracarboxylic acid Chemical compound OC(=O)C1(C(O)=O)CC1(C(O)=O)C(O)=O FGQOVSPPSXYIBT-UHFFFAOYSA-N 0.000 description 1
- IWLKHYVAPGGFHG-UHFFFAOYSA-N decane-1,2,7,8-tetracarboxylic acid Chemical compound CCC(C(CCCCC(CC(=O)O)C(=O)O)C(=O)O)C(=O)O IWLKHYVAPGGFHG-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 description 1
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- LTYMSROWYAPPGB-UHFFFAOYSA-N diphenyl sulfide Chemical compound C=1C=CC=CC=1SC1=CC=CC=C1 LTYMSROWYAPPGB-UHFFFAOYSA-N 0.000 description 1
- YWEUIGNSBFLMFL-UHFFFAOYSA-N diphosphonate Chemical compound O=P(=O)OP(=O)=O YWEUIGNSBFLMFL-UHFFFAOYSA-N 0.000 description 1
- BOOQTIHIKDDPRW-UHFFFAOYSA-N dipropyltryptamine Chemical compound C1=CC=C2C(CCN(CCC)CCC)=CNC2=C1 BOOQTIHIKDDPRW-UHFFFAOYSA-N 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 150000002118 epoxides Chemical class 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- IWBOPFCKHIJFMS-UHFFFAOYSA-N ethylene glycol bis(2-aminoethyl) ether Chemical compound NCCOCCOCCN IWBOPFCKHIJFMS-UHFFFAOYSA-N 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- 239000006081 fluorescent whitening agent Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000003205 fragrance Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- SBDRYJMIQMDXRH-UHFFFAOYSA-N gallium;sulfuric acid Chemical compound [Ga].OS(O)(=O)=O SBDRYJMIQMDXRH-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- JNWGOCSTXJQFEP-UHFFFAOYSA-N hexane-1,1,1,2-tetracarboxylic acid Chemical compound CCCCC(C(O)=O)C(C(O)=O)(C(O)=O)C(O)=O JNWGOCSTXJQFEP-UHFFFAOYSA-N 0.000 description 1
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 229910003471 inorganic composite material Inorganic materials 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- MILUBEOXRNEUHS-UHFFFAOYSA-N iridium(3+) Chemical compound [Ir+3] MILUBEOXRNEUHS-UHFFFAOYSA-N 0.000 description 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- AMXOYNBUYSYVKV-UHFFFAOYSA-M lithium bromide Chemical compound [Li+].[Br-] AMXOYNBUYSYVKV-UHFFFAOYSA-M 0.000 description 1
- INHCSSUBVCNVSK-UHFFFAOYSA-L lithium sulfate Inorganic materials [Li+].[Li+].[O-]S([O-])(=O)=O INHCSSUBVCNVSK-UHFFFAOYSA-L 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- OTCKOJUMXQWKQG-UHFFFAOYSA-L magnesium bromide Chemical compound [Mg+2].[Br-].[Br-] OTCKOJUMXQWKQG-UHFFFAOYSA-L 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- BLQJIBCZHWBKSL-UHFFFAOYSA-L magnesium iodide Chemical compound [Mg+2].[I-].[I-] BLQJIBCZHWBKSL-UHFFFAOYSA-L 0.000 description 1
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 1
- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 150000005673 monoalkenes Chemical class 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- OOHAUGDGCWURIT-UHFFFAOYSA-N n,n-dipentylpentan-1-amine Chemical class CCCCCN(CCCCC)CCCCC OOHAUGDGCWURIT-UHFFFAOYSA-N 0.000 description 1
- WTBFGJWHVSTVRB-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)-2-phenylphenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical group C1=CC=CC=C1C1=CC(N(C=2C=C3C=CC=CC3=CC=2)C=2C=C3C=CC=CC3=CC=2)=CC=C1C1=CC=C(N(C=2C=C3C=CC=CC3=CC=2)C=2C=C3C=CC=CC3=CC=2)C=C1 WTBFGJWHVSTVRB-UHFFFAOYSA-N 0.000 description 1
- KLZHUQDVWUXWEZ-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1.C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 KLZHUQDVWUXWEZ-UHFFFAOYSA-N 0.000 description 1
- QCILFNGBMCSVTF-UHFFFAOYSA-N n-[4-[4-[4-(n-anthracen-1-ylanilino)phenyl]phenyl]phenyl]-n-phenylanthracen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC3=CC=CC=C3C=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC4=CC=CC=C4C=C3C=CC=2)C=C1 QCILFNGBMCSVTF-UHFFFAOYSA-N 0.000 description 1
- NBHXGUASDDSHGV-UHFFFAOYSA-N n-[4-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 NBHXGUASDDSHGV-UHFFFAOYSA-N 0.000 description 1
- RJSTZCQRFUSBJV-UHFFFAOYSA-N n-[4-[4-[n-(1,2-dihydroacenaphthylen-3-yl)anilino]phenyl]phenyl]-n-phenyl-1,2-dihydroacenaphthylen-3-amine Chemical group C1=CC(C2=3)=CC=CC=3CCC2=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=2CCC3=CC=CC(C=23)=CC=1)C1=CC=CC=C1 RJSTZCQRFUSBJV-UHFFFAOYSA-N 0.000 description 1
- UNJZLNFHHINVOB-UHFFFAOYSA-N n-naphthalen-1-ylnaphthalen-2-amine Chemical compound C1=CC=C2C(NC=3C=C4C=CC=CC4=CC=3)=CC=CC2=C1 UNJZLNFHHINVOB-UHFFFAOYSA-N 0.000 description 1
- OBKARQMATMRWQZ-UHFFFAOYSA-N naphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 OBKARQMATMRWQZ-UHFFFAOYSA-N 0.000 description 1
- DOBFTMLCEYUAQC-UHFFFAOYSA-N naphthalene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 DOBFTMLCEYUAQC-UHFFFAOYSA-N 0.000 description 1
- 150000002790 naphthalenes Chemical class 0.000 description 1
- YTVNOVQHSGMMOV-UHFFFAOYSA-N naphthalenetetracarboxylic dianhydride Chemical compound C1=CC(C(=O)OC2=O)=C3C2=CC=C2C(=O)OC(=O)C1=C32 YTVNOVQHSGMMOV-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- USPVIMZDBBWXGM-UHFFFAOYSA-N nickel;oxotungsten Chemical compound [Ni].[W]=O USPVIMZDBBWXGM-UHFFFAOYSA-N 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000013086 organic photovoltaic Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- 150000007978 oxazole derivatives Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229930184652 p-Terphenyl Natural products 0.000 description 1
- GPRIERYVMZVKTC-UHFFFAOYSA-N p-quaterphenyl Chemical group C1=CC=CC=C1C1=CC=C(C=2C=CC(=CC=2)C=2C=CC=CC=2)C=C1 GPRIERYVMZVKTC-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- DLYUQMMRRRQYAE-UHFFFAOYSA-N phosphorus pentoxide Inorganic materials O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000656 polylysine Polymers 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- JRDBISOHUUQXHE-UHFFFAOYSA-N pyridine-2,3,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)N=C1C(O)=O JRDBISOHUUQXHE-UHFFFAOYSA-N 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 150000003248 quinolines Chemical class 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- RBTVSNLYYIMMKS-UHFFFAOYSA-N tert-butyl 3-aminoazetidine-1-carboxylate;hydrochloride Chemical compound Cl.CC(C)(C)OC(=O)N1CC(N)C1 RBTVSNLYYIMMKS-UHFFFAOYSA-N 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- NZFNXWQNBYZDAQ-UHFFFAOYSA-N thioridazine hydrochloride Chemical compound Cl.C12=CC(SC)=CC=C2SC2=CC=CC=C2N1CCC1CCCCN1C NZFNXWQNBYZDAQ-UHFFFAOYSA-N 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- HDUMBHAAKGUHAR-UHFFFAOYSA-J titanium(4+);disulfate Chemical compound [Ti+4].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O HDUMBHAAKGUHAR-UHFFFAOYSA-J 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- ISNYUQWBWALXEY-OMIQOYQYSA-N tsg6xhx09r Chemical compound O([C@@H](C)C=1[C@@]23CN(C)CCO[C@]3(C3=CC[C@H]4[C@]5(C)CC[C@@](C4)(O)O[C@@]53[C@H](O)C2)CC=1)C(=O)C=1C(C)=CNC=1C ISNYUQWBWALXEY-OMIQOYQYSA-N 0.000 description 1
- ZOYIPGHJSALYPY-UHFFFAOYSA-K vanadium(iii) bromide Chemical compound [V+3].[Br-].[Br-].[Br-] ZOYIPGHJSALYPY-UHFFFAOYSA-K 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
- B29D7/00—Producing flat articles, e.g. films or sheets
- B29D7/01—Films or sheets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/12—Unsaturated polyimide precursors
- C08G73/128—Unsaturated polyimide precursors the unsaturated precursors containing heterocyclic moieties in the main chain
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/877—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
- C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2237—Oxides; Hydroxides of metals of titanium
- C08K2003/2241—Titanium dioxide
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Laminated Bodies (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
本發明提供一種用於OED之基板與其用途。該基板可用於製造一可撓式裝置,該可撓式裝置可呈現合適的霧度,且可具有優異的物理特性,如透光率,並且在需要時也可具有優異的物理特性,如表面平滑性與折射率。
Description
本發明係有關於一種用於有機電子裝置(OED)之基板與其用途。
OED之類型包括有機發光裝置(OLED)、有機光伏電池、有機光導體(OPC)或有機電晶體。例如,傳統的OED係依次包括一玻璃基板、一透明電極層、一包括發光單元之有機層,以及一反射電極層。
於一個被稱為底部發光裝置的結構中,該透明電極層可形成為一透明電極層與該反射電極層可形成為一反射電極層。於一個被稱為頂部發光裝置的結構中,該透明電極層可形成為一反射電極層與該反射電極層可形成為一透明電極層。由該電極層注入之電子與電洞會結合成一發光單元,進而產生光。產生出的光可被發射到該底部發光裝置之基板與發射到頂部發光裝置之反射電極層。
由該有機層發射出的光中,會因為全反射,而使部分或更多以臨界角入射於每層之介面的光不被發射與被收集,從而使發射出的光為極少量的光。因此,例如,於公開的專利文件1中,其係為了增加光萃取效率。然而,迄今為
止,已知之光萃取技術通常係使用剛性基板,如玻璃基板,故該已知光萃取技術並不能有效地應用到一個具有與玻璃基板不同特性之可撓式基板之裝置。
現有技術文獻
專利文件
專利文件1:日本專利號:3861758
本發明提供一種基板,該基板可用於製造一可撓式裝置,該可撓式裝置具有合適的霧度,且具有優異的物理特性,如光萃取率,並且在需要時也具有優異的物理特性,如表面平滑性與折射率。
在一方面,一用於OED之基板可包括一聚醯亞胺膜作為底膜。該聚醯亞胺膜可透過最小量之光散射粒子或不使用光散射粒子去產生一霧度。因此,相比與一般具有霧度之塑膠膜,該聚醯亞胺可具有優異的平滑度,且可於OED內表現出優異的效果。由於該聚醯亞胺膜之折射率可根據需求自由調整,故難以於傳統的塑膠膜實現之高折射率,可根據目的於該聚醯亞胺膜實現。當需要時,除了該底膜外,該基板可包括一高折射層。
一般而言,該聚醯亞胺係由四羧酸二酐和二胺化合物於縮合反應製備出聚醯胺酸,並由醯胺酸於醯亞胺化反應所製備出。因此,本發明之聚醯亞胺底膜還可包括該二酐與該二胺化合物之一縮合單元(也即係一聚醯胺酸單元)或
其一醯亞胺化單元(也即係一聚醯亞胺單元)。
於本發明中,上述之霧度與折射率可使用至少兩個包含在該聚醯亞胺底膜之單元所調整。因此,該聚醯亞胺底膜可包含一第一單元,其為一第一四羧酸二酐與一第一二胺化合物之縮合單元或其醯亞胺化單元;以及一第二單元,其為一第二四羧酸二酐與一第二二胺化合物之縮合單元或其醯亞胺化單元。
於該底膜中,該第一單元與該第二單元可存在於一種聚合物或不同的聚合物中,也即係該底膜可包含一包含該第一單元與該第二單元之共聚合物或一包含該第一單元之聚合物與一包含該第二單元之聚合物。此外,每第一單元與每第二單元可為一預定的聚合物內或一聚合物內之一鏈。
該第一單元與該第二單元可具有不同的物理特性來調整霧度與折射率。例如,該第一單元與該第二單元可具有與彼此不同的折射率。除非特別定義,該“折射率”係以一波長為550nm之光所測量出的折射率。例如,該第一單元與該第二單元之間的折射率差異之絕對值可為0.01以上。於另一實例中,該折射率差異之絕對值可大約為0.02、0.03、0.04、0.05或0.06以上。該折射率差異之絕對值可大約為0.2、0.15、0.1或0.08以下。上述之調整該第一單元與該第二單元之折射率的方法並無特別限制,例如,可於選擇構成各單元之組成物來調整。如下所述,用於形成該單元之每個二酐或二胺化合物可選自芳香族、脂肪族或脂環族二酐或二胺化合物。當習知之可提供高折射率之芳族化合物被選擇時,一具
有相對高折射率之單元會被形成。
於另一實例中,該第一單元與該第二單元可具有不同之極性。例如,任一個第一單元與第二單元或兩者可包含至少一個極性官能基。於此,包含於該第一單元之極性官能基與包含於該第二單元之極性官能基的莫耳數差異之絕對值為2以上。於另一實例中,該莫耳數差異之絕對值可為10、8、6或4以下。該極性官能基可由上述之二酐或二胺化合物取代。可使用之極性官能基之類型可為一鹵素原子如氟或氯、一被鹵素如氟或氯取代之鹵烷基、一氰基、一硝基、一羥基,一烷氧基、一氰酸酯基或一硫氰酸酯基,但並不特別限於此,並且以方便應用而言,使用之極性官能基為一鹵素原子或鹵烷基。於此,該鹵烷基或烷氧基可為具有1至20個、1至16個、1至12個、1至8個,或1至4個碳原子的一鹵烷基或一烷氧基。各種被上述極性官能基所取代之二酐或二胺化合物可為習知的,或可由傳統方法合成。
該聚醯亞胺底膜之霧度可被該第一單元與該第二單元之間的折射率差異或極性差異進行均勻地調整。當不同類型的聚醯亞胺具有不同折射率或極性混合於一混合物時,可形成一不透明的乳化液,並且該乳化液之不透明度可被轉移至該膜。因此,當用於形成該乳化液之組成物之折射率差異或極性差異被調整時,該聚醯亞胺膜之霧度可被調整。此外,當具有高折射率之單元的比例於此過程中被調整時,整個膜的折射率也可容易地被調整。當該霧度是由一聚合物單元本身給予時,而不是由一使用傳統散射粒子之方法給予一
霧度時,該聚合物可具有優異的表面平滑性以及均一的霧度。
該第一單元與該第二單元在該底膜中之比例可無特別限制地依所需之折射率與霧度調整,例如,相對於100重量份之第二單元,該底膜可含有約3至100、3至80、3至60、3至40、3至20,或3至15重量份之第一單元,但本發明並不限於此。
一用於形成含有該第一單元與該第二單元之該聚醯亞胺的二酐或二胺化合物之類型以及使用該二酐或二胺化合物之類型於形成該單元之方法並無特別限制。在與聚醯亞胺相關之領域中,各種用於合成聚醯亞胺之二酐或二胺化合物是已知的,並且可依所需之折射率或極性由已知的組成物中選擇一合適之類型。
例如,可用於作為二酐之脂肪族、脂環族,或芳香族四羧酸二酐可為丁烷四羧酸二酐、戊烷四羧酸二酐、己烷四羧酸二酐、環戊烷四羧酸二酐、雙環戊烷四羧酸二酐、環丙烷四羧酸二酐、甲基環己烷四羧酸二酐、3,3',4,4'-二苯甲酮四羧酸二酐、3,4,9,10-苝四羧酸二酐、4,4'-磺醯基二酞酸酐、3,3',4,4'-聯苯四羧酸二酐、1,2,5,6-萘四羧酸二酐、2,3,6,7-萘四羧酸二酐、1,4,5,8-萘四羧酸二酐、2,3,5,6-吡啶四羧酸二酐、間三聯苯-3,3',4,4'-四羧酸二酐、對三聯苯-3,3',4,4'-四羧酸二酐、4,4'-氧雙鄰苯二甲酸二酐、1,1,1,3,3,3-六氟-2,2-雙[(2,3-或3,4-二羧基苯氧基)苯丙烷二酐、2,2-雙[4-(2,3-或3,4-二羧酸苯氧基)苯基]丙烷二酐,或1,1,1,3,3,3-六氟-2,2-
雙[4-(2,3-或4-羧基苯氧基)苯基]丙烷二酐,當作為芳香族、脂肪族或脂環族之二胺化合物時,一芳香族二胺如對苯二胺(PDA)、間苯二胺(m-PDA)、2,4,6-三甲基-1,3-苯二胺、2,3,5,6-四甲基-1,4-苯二胺、4,4'-二氨基二苯醚、3,4'-二氨基二苯醚、3,3'-二氨基二苯醚、4,4'-二胺二苯基硫、4,4'-二氨基二苯甲烷、3,4'-氨基二苯基甲烷、3,3'-二氨基二苯基甲烷、4,4'-亞甲基-雙(2-甲基苯胺)、4,4'-亞甲基-雙(2,6-二甲基苯胺)、4,4'-亞甲基-雙(2,6二乙基苯胺)、4,4'-亞甲基-雙(2-異丙基-6-甲基苯胺)、4,4'-亞甲基-雙(2,6-二異丙基苯胺)、4,4'-二氨基二苯砜、3,3'-二氨基二、聯苯胺、鄰聯甲苯胺、間聯甲苯胺、3,3',5,5'-四甲基聯苯胺、2,2'-雙(三氟甲基)聯苯胺、1,4-雙(4-氨基苯氧基)苯、1,3-雙(4-氨基苯氧基)苯、1,3-雙(3-氨基苯氧基)苯、雙[4-(4-氨基苯氧基)苯基]碸、雙[4-(3-氨基苯氧基)苯基]碸、2,2-雙[4-(4-氨基苯氧基)苯基]丙烷、2,2-雙[4-(3-氨基苯氧基)苯基]丙烷、2,2-雙[4-(4-氨基苯氧基)苯基]丙烷(6HMDA)、2,2'-雙(三氟甲基)聯苯胺(2,2'-雙(三氟甲基)聯苯胺,TFMB)、3,3'-雙(三氟甲基)-4,4'-二氨基聯苯(3,3'-TFDB)、4,4'-雙(3-氨基苯氧基)二苯碸(DBSDA)、雙(3-氨基苯基)碸(3DDS)、雙(4-氨基苯基)碸(4DDS)、1,3-雙(3-氨基苯氧基)苯(APB-133)、1,4-雙(4-氨基苯氧基)苯(APB-134)、2,2'-雙[3-(3-氨基苯氧基)苯基]六氟丙烷(3-BDAF)、2,2'-雙[4(4-氨基苯氧基)苯基]六氟丙烷(4-BDAF)、2,2'-雙(3-氨基苯基)六氟丙烷(3,3'-6F)、2,2'-雙(4-氨基苯基)六氟丙烷(4,4'-6F),或4,4'-
二氨基二苯醚(ODA);或一脂肪族二胺如1,6-己二胺、1,4-環己烷二胺、1,3-環己烷二胺、1,4-雙(氨基甲基)環己烷、1,3-雙(氨基甲基)環己烷、4,4'-二氨基、4,4'-二氨基-3,3'-二甲基二環、4,4'-二氨基-3,3'-二甲基、1,2-雙-(2-氨基乙氧基)乙烷、雙(3-氨基丙基)醚、1,4-雙(3-氨基丙基)哌嗪、3,9-雙(3-氨基丙基)-2,4,8,10-四惡螺[5.5]-十一烷,或1,3-雙(3-氨基丙基)四甲基二矽氧烷可被使用,但本發明並不限於此。
該底膜可為一透光膜。該“透光膜”係指一對任一個於一個可見光區之光或於一整個可見區之光具有,例如,50%、60%、70%或80%以上之光透率之膜。
該底膜之霧度可根據需求進行調整,並可於一範圍內如3%至90%進行調整。該“霧度”可使用設備如霧度計HM-150根據ASTM D1003進行測量。於此,該霧度之另一下限可為,例如,約5%或10%。另外,該霧度之另一上限可為,例如,約85%、80%、75%、70%、65%、60%、55%、50%、45%、40%、35%或30%。如上所述,本發明係透過選擇該底膜之聚合物之單元給予一霧度,於此,該底膜可不包含散射粒子或只包含少量的散射粒子。該“散射粒子”可指具有與週邊基體不同之折射率與具有可根據入射光之波長散射該入射光之平均粒徑。本發明之底膜可含有相對於該底膜之總重量約10、8、6、4、2或1重量百分比以下之散射粒子,或該底模可不含有散射粒子。
該底膜可具有約5ppm/℃至70ppm/℃之熱膨脹
係數(CTE)。該範圍可利於防止缺陷,如層間剝離發生於一有機材料層與無機材料層混合之結構。
該底膜可具有約200℃以上之玻璃轉化溫度。該玻璃轉化溫度可為該底膜之玻璃轉化溫度,或者為具有下述緩衝層形成於上面之底模之玻璃轉化溫度。該範圍可適於OED製造處理之高溫沉積或圖案化處理。該玻璃轉化溫度可為,於另一實例中,約210℃、220℃、230℃、240℃或250℃以上。該玻璃轉化溫度之上限可為,但不特別限於,例如,大約400℃、350℃或300℃。
於該底膜中,一均方根(RMS)可於一個範圍大約為0.1nm至5nm中調整。該RMS可為該底膜表面之RMS,或者可為該底模之下述緩衝層之表面之RMS。該表面粗糙度之範圍可利於提高於其上面形成之層的性能。例如,當一具有阻擋特性之無機材料層形成於該底膜上時,該無機材料層會形成於具有上述範圍之RMS的表面上,一具有優異水阻擋特性之層可被形成。該RMS可為,於另一實例中,約4nm、3nm、2.5nm或2nm以下。
該底膜可具有大約1.5、1.6、1.7、1.75或1.8以上之折射率。該OED之底膜之折射率範圍可利於增加該裝置之發光效率。該底膜之折射率的上限可為,但不特別限於,例如,約2.0。該基膜之高折射率可透過選擇如上所述之構成該膜之單元或當需要時透過混合適量具有高折射率之組成物來進行調整。
該底膜之厚度可於一合適的範圍內依所需之性
能,但並無特別限於此,例如可撓性,光萃取效率或阻擋特性選擇。例如,該底膜之厚度可為約10μm至50μm或20μm至30μm。
當需要時,該基板可更包括一形成於該底膜上之高折射層。該“高折射層”可指一對一波長為550nm之光具有1.7、1.8、1.85或1.9以上之折射率之層。該高折射層之折射率的上限可為,例如,約2.0。當如上所述之該高折射層形成於該底膜上時,所需之性能,例如,高萃取效率可被改進。
該高折射層可包括高折射粒子與一粘合劑。例如,該高折射層可透過混合高折射粒子與粘合劑於一組成物所形成。於此,該粘合劑可使用習知的材料,並無特別限制。例如,該粘合劑可為本領域中習知的各種有機粘合劑、無機粘合劑或有機/無機粘合劑。考慮到該裝置之壽命或優異的高溫處理抗性,於製造過程中所執行之光處理或蝕刻處理時,具有優異的耐熱性與耐化學性之有機粘合劑、無機粘合劑或有機/無機粘合劑可被選擇。該粘合劑可具有,例如,大約1.4、1.45、1.5、1.6、1.65或1.7以上之折射率。該粘合劑之折射率之上限可於一個範圍內選擇,該範圍可滿足該高折射層之折射率及考慮到混合之粒子的折射率。該粘合劑可為一個熱或光固化的單體、寡聚物或聚合物有機材料含有聚醯亞胺、聚醯胺酸、一具有芴環、尿烷、環氧化物、聚酯、或丙烯酸酯之CALDO樹脂、或一無機材料或有機/無機組合材料如氧化矽、氮化矽、氮氧化矽、環氧樹脂或聚矽氧烷。
該高折射層可更包括高折射粒子。該“高折射粒
子”可為,例如,具有1.8、2.0、2.2、2.5、2.6或2.7以上之折射率的粒子。該高折射粒子之折射率之上限可於一個範圍內選擇,該範圍可滿足該高折射層之折射率及考慮到混合之粘合劑的折射率。該高折射粒子可具有平均粒徑為,例如,約1nm至100nm、10nm至90nm、10nm至80nm、10nm至70nm、10nm至60nm、1nm至50nm,或10nm至45nm。該高折射粒子可為,例如,氧化鋁、鋁矽酸鹽、氧化鈦或氧化鋯。該高折射粒子,例如,可為具有2.5以上之折射率的金紅石型氧化鈦顆粒。該金紅石型氧化鈦可具有比其它粒子更高的折射率,因此所需之折射率可於相對小之比例進行調整。該高折射粒子於該高折射層中之比率可於一能夠確保上述之該高折射層之折射率的範圍內調整。
一無機材料層可設於該底膜上方,且於一些情況下,該無機材料層可作為該高折射層。該“無機材料層”可指一包括基於重量之50%以上或60%的無機材料之層。該無機材料層可僅包括一無機材料,或當包括該範圍內之無機材料時,也包括其他成分,例如有機材料。
該無機材料層可為,例如,一阻擋層。該“阻擋層”可指一能夠防止、抑制或減少外部因子之滲透之層,例如,水或蒸汽,可能對裝置之性能有不良影響,例如,對該裝置中之有機層。例如,該阻擋層可具有10-4g/m2/天以下之水蒸氣穿透率(WVTR)。於本發明中,WVTR可為使用一測量器(例如,PERMATRAN-W3/31,MOCON公司)在40℃與90%之相對濕度下測定出的數值。
該阻擋層可於任一個習知可防止、抑制或減少外部因子如水氣與氧氣之滲透之材料所形成。該材料可為如銦、錫、鉛、金、銅、銀、鋁、鈦及鎳等金屬;如氧化鈦、二氧化鈦、三氧化三鈦、三氧化二鋁、氧化鎂、氧化矽、二氧化矽、氧化鍺、氧化鎳、氧化鈣、氧化鋇、三氧化二鐵、三氧化二釔、二氧化鋯、三氧化二鈮、或二氧化鈰等金屬氧化物;如矽化氮之金屬氮化物;如氮氧化矽之金屬氮氧化物;如二氟化鎂、氟化鋰、三氟化鋁,或三氟化鈣之金屬氟化物;一吸收率為1%以上之可吸收材料或一吸收係數0.1%以下之防水材料。
例如,該無機材料層可具有低結晶度或基本上具有非結晶性。當透過一般的沉積方法形成時,基於該材料之特性,該無機材料層具有高結晶機率,因此要滿足上述結晶度係不容易地。但是,可滿足上述結晶度之無機材料層可透過使用任一個下列方法形成,如一使用一氧化物層如金屬氧化物形成一無機材料層之方法、一反覆形成薄層之方法、一於反覆形成薄層時調整各子層由不同材料形成之方法,和一使用不同材料形成各子層,雖然,所有的子層皆形成為氧化物層如金屬氧化物層之方法。
該無機材料層可與該底膜具有小的折射率差異。於此,尤其係它可助於一具有優異光萃取效率之基板的形成。例如,該無機材料層與該底膜之間的折射率差異之絕對值可為約1、0.7、0.5或0.3以下。因此,當該底膜具有如上述之高折射率時,該無機材料層也可具有在同一等級之折射率。
例如,該阻擋層之折射率可為大約1.5、1.6、1.7或1.75以上。當使用本發明之基板的OED為OLED時,該底膜之折射率之範圍可利於增加該裝置之發光效率。該無機材料層之折射率的上限可為,例如,但不特別限於,約2.0。
該無機材料層之厚度可根據所希望之用途所造成之效果來決定,並且於一實例中,該厚度之範圍可為,但不特別限於,約10nm至100nm、1nm至90nm、10nm至80nm、1nm至70nm、10nm至60nm、10nm至50nm或20nm至50nm。
當該無機材料層可具有單層或多層結構時,可能需要有一個多層結構,以滿足上述結晶度。該多層結構可包括一以相同類型或不同類型之無機材料層堆疊之結構。該無機材料層於一多層結構中之形成可助於具有上述界面粘結性質與上述結晶度之無機材料層的形成。此外,該無機材料層於一多層結構中之形成可助於具有上述折射率之無機材料層的形成。
具有一多層結構之無機材料可包括至少一第一子層與一第二子層之堆疊結構。考慮到該無機材料層所需之界面粘結性質、結晶度、阻擋性質或折射率,該第一子層之厚度與該第二子層之厚度可被調整。例如,該第一子層之厚度與該第二子層之厚度可全部於一7nm、6nm、5nm、4nm、3nm或2nm以下之範圍內調整。該子層之厚度的下限並無特別限制。當該子層之厚度為較小時,對於該界面粘結性質、該結晶度、該阻擋性與該折射率之調整的貢獻可被增加,並
且當該子層的厚度為較小時,所需之程序之數目可被增加,以達到所需之厚度。因此,該子層之厚度的下限可於一根據所需之厚度等之合適的範圍內來決定,並且可被調整至大約0.1nm以上。
考慮到該界面粘結性質、該結晶度、該阻擋性與該折射率,具有一多層結構之無機材料層中所有包括在其內之子層之厚度可於上述範圍內調整。於此,該無機材料層可不包括厚度大於10nm、9nm、8nm、7nm、6nm或5nm之子層。
可包含在該無機材料層中之子層的數量並無特別限制。它可根據該子層之厚度與所需之無機材料層之厚度進行調整。於一實例中,該無機材料層可包括2至50個子層。於此範圍內,4、6、8或10個以上之子層可被包括在內。此外,於此範圍內,45、40、35、30、25、20或15個以下之子層可被包括在內。當該無機材料層包括3個以上之子層時,全部的子層可為該第一子層或該第二子層,並且,還可包括一第三子層或以上之子層。
該子層可由各種材料中之一種形成,並可由一氧化物、一氮化物或各種金屬或非金屬之氧氮化物所形成,以貢獻該界面粘結性質、該結晶度、該阻擋性與該折射率。因此,該第一子層與該第二子層可為氧化物層、氮化物層或氮氧化物層。當需要時,所有包括在該無機材料層中之子層可為氧化物形成。可用於此情況下之氧化物可適當地從能夠形成上述阻擋層之氧化物選擇且並無特別限制。於該些子層間,
相互接觸之子層可貢獻該界面粘結性質、該結晶度、該阻擋性與該折射率,只要該些子層係於不同材料所形成。因此,當該第一子層與該第二子層相互接觸時,不同的材料可為,例如,不同的氧化物、氮化物或氧氮化物。儘管該無機材料層包括如上所述之一第三子層、一第四子層或以上之子層,相互接觸之子層較佳係可於不同之材料形成,例如,一個不同的氧化物。
該第一子層可具有一第一折射率,該第二子層可具有一與第一折射率不同之第二折射率。當該層被堆疊時較佳為,上述效果可被保證與該無機材料層之折射率可於上述範圍內調整。一第一折射率與一第二折射率之間的差異之絕對值可為,例如,0.1以上。於另一實例中,該絕對值可為,0.2、0.3、0.4、0.5或0.6以上。此外,於另一實例中,該絕對值可為,2、1.8、1.6、1.4或1.2以下之範圍內。該第一折射率與該第二折射率之範圍並無特別限制,只要它們係於上述範圍內,但是,例如,該第一子層之折射率可於1.4至1.9之範圍內與該第二子層之折射率可於2.0至2.6之範圍內。該在第一子層與該第二子層可為金屬氧化物層。例如,該第一子層之合適的材料可為Al2O3與該第二子層之合適材料可為是TiO2。只要上述折射率之範圍可被獲得,且一最終之堆疊結構可具有阻擋性,各種材料都可被使用。
該無機材料層或各個子層可於一習知之方法形成,但為確保界面的凝聚力,該無機材料層或各個子層較佳係以原子層沉積(ALD)所形成。該ALD可包括一交替沉積
一前驅物如有機金屬與一前驅物如水於一將被附著之表面上之處理,並於此過程中,該前驅物之單層可交替地形成,並相互反應。當一預定的官能基如上述之羥基被包含在該底膜中時,於形成過程中,由該ALD形成之層可與該官能基反應,從而確保所需之界面粘結性質。除非特別定義,否則該“ALD層”可指由該ALD所形成之無機材料層。
一用於形成一無機材料層或一子層之方法除了ALD方法外,還可包括物理氣相沉積(PVD)如濺射、脈衝激光沉積(PLD)、電子束蒸發、熱蒸發或雷射分子束磊晶生長(L-MBE),或者,化學氣相沉積(CVD),如金屬有機化學氣相沉積(MOCVD)、氫化物氣相磊晶生長(HVPE)、引發性化學氣相沉積(ICVD)或電漿增強化學氣相沉積(PECVD)。當需要時,可根據所使用之材料,由上述方法中選擇一合適的方法,從而將該無機材料層之性能最大化。
本發明所述之基板可包括一附加層。例如,本發明所述之基板可更包括一緩衝層,該緩衝層係設於該無機材料層與該底膜之間,以使一界面粘結性質可實現於該無機材料層與該底膜之間。然而,該緩衝層係一個非必要的成分,例如,只要該界面粘結性質可被實現,該緩衝層就無須被使用。
本發明所述之基板可更包括一電極層設於該無機材料層上。
該電極層可為OED常使用之一電洞注入電極層或電子注入電極層。該電極層可為一透明電極層或一反射電
極層。
該電洞注入電極層可由,例如,一具有相對高之功函數之材料所形成,並當需要時,可由一透明或反射材料所形成。例如,該電洞注入電極層可包括具有約4.0eV以上之功函數之一金屬、一合金、一導電性化合物或一含有至少兩種上述材料之混合物。該材料可為一金屬如金、CuI、氧化銦錫(ITO)、氧化銦鋅(IZO)、氧化鋅錫(ZTO)、鋁-或銦-摻雜之氧化鋅、鎂氧化銦、鎳氧化鎢、一氧化物如Zn、SnO2或In2O3、一金屬氮化物如氮化鎵、一金屬硒化物如硒化鋅、或一金屬硫化物如硫化鋅。一透明電洞注入電極層還可由一具有金屬薄膜如Au、Ag或Cu之堆疊物與一高折射透明材料如ZnS、TiO2或ITO所形成。
該電洞注入電極層可任選由一方法,如沉積、濺射、化學沉積或一電化學方法所形成。另外,根據其之使用所形成的電極層可透過一習知的光刻法或一使用蔭遮罩之方法來圖案化。
該電子注入電極層可由,例如,一具有相對低之功函數之材料所形成,並且可由用於形成該電洞注入電極層之材料中合適的透明或反射材料所形成,但本發明並不限於此。該電子注入電極層也可由,例如,沉積或濺射所形成,或在需要時可適當地被圖案化。
該電極層形成之厚度可為,例如,約90nm至200nm、90nm至180nm或90nm至150nm。
另一方面,本發明提供了一種OED。該OED可
包括如上述之用於OED之基板;以及一具有一第一電極層、一有機材料層與一第二電極層之裝置區域,該裝置區域係設於該基板之無機材料層上。當用於OED之基板包括上述電極層時,該電極層可作為該第一電極層。
該例示性之OED可由一頂部方向依次包括包含該底膜與該無機材料層之基板、一第一電極層、一有機材料層、一第二電極層、一第二無機材料層與一覆蓋膜。該些層可直接層疊,而無須於相鄰層之間層疊另一層,或可由層疊另一層之方式層疊。
除非特別定義,否則,該“頂部方向”係指從該第一電極層至該第二電極層之方向,而該“底部方向”係指從該第二電極層至該第一電極層之方向。
於下文中,為便於說明,於說明書上述之結構中,一包括所有存在於該第一電極層下之因素(不包括該第一電極層)之區域將被稱為一基板區域,一包括該第一電極層、該第二電極層,以及所有存在於其間之因素之區域將被稱為一個裝置區域,一包括所有存在於該第二電極層上之因素(不包括該第二電極層)之區域將被稱為一上部區域。
該基板區域除了上述底膜之外可包括一附加層。該附加存在於該基板區域中之層可為一載體基板、一阻擋膜或一粘合層。
另一能夠被包括於該基板區域中之層可為一阻擋膜。相比於一個使用於基板,其具有優異的阻擋性之材料的剛性結構,如玻璃基板,於一個可撓式結構中,一具有相
對低之阻擋性之底膜可被使用,並且因此,一個附加的阻擋膜可以存在於,例如,該底膜下,以補償該阻擋性。該阻擋膜可為一當需要時能夠確保適當的阻擋性與透光率之膜,且並無特別限制。
該阻擋膜可使用,例如,一粘合層附著到該底膜。該“粘合層”包括常稱為粘合劑之材料與使用一稱為壓敏性粘合劑之材料與一稱為粘合劑之材料所形成之層。用於形成該粘合層之材料可為,但不特別限定於,例如,一習知的壓敏性粘合劑/粘合劑材料,如一丙烯酸系聚合物、一矽聚合物、一橡膠系聚合物、一乙烯醋酸乙烯酯(EVA)聚合物或一烯烴聚合物如聚異丁烯(PIB)。
一合適的防水材料可被混合於該粘合層中。以下,該“混合防水材料之粘合層”可指一具有阻擋性之粘合層。該“防水材料”可為一可吸附或去除透過一物理或化學反應由外部環境引入之水或蒸氣之成分。可混合於該粘合層中之防水材料之特定類型可為,但不特別限定於,一種下述材料或一種包含至少兩種下述材料之混合物,如一金屬氧化物、一有機金屬氧化物、一金屬鹽與五氧化二磷(P2O5)。於此,該金屬氧化物之具體例子可為,但不限於,氧化鋰(Li2O)、氧化鈉(Na2O)、一氧化鋇(BaO)、一氧化鈣(CaO)或一氧化鎂(MgO),以及該金屬鹽可為,但不限於,一硫酸鹽如硫酸鋰(Li2SO4)、硫酸鈉(Na2SO4)、硫酸鈣(CaSO4)、硫酸鎂(MgSO4)、硫酸鈷(CoSO4)、硫酸鎵(Ga2(SO4)3)、硫酸鈦(Ti(SO4)2)或硫酸鎳(NiSO4);一金屬鹵化物如氯化鈣(CaCl2)、
氯化鎂(MgCl2)、氯化鍶(SrCl2)、氯化釔(YCl3)、氯化銅(CuCl2)、氟化銫(CSF)、氟化鉭(TAF5)、氟化鈮(NbF5)、溴化鋰(LiBr)、溴化鈣(CaBr2)、溴化銫(CeBr3)、溴化硒溴(SeBr4)、溴化釩(VBr3),溴化鎂(MgBr2)、鋇碘化物(BaI2)或碘化鎂(MgI2);或一金屬氯酸鹽如高氯酸鋇(Ba(ClO4)2)或高氯酸鎂(Mg(ClO4)2)。
合適的散射粒子可被混合於該粘合層中,以使該粘合層可顯示出適當的霧度。當該粘合層顯示出一霧度時,光萃取效率可被改進。可混合於該粘合層中之散射粒子之類型並無特別限制與包括於該散射層中之散射粒子之合適之類型可依用於形成該粘合層之樹脂的折射率之考量所選擇。
另一可存在於該基板區域中之層可為一臨時或永久附著於該底膜下之載體基板。以往,該載體基板可為一剛性基板如一玻璃基板。
該基板區域可由各種結構形成。例如,該基板區域可具有一由底部方向依次形成之一第一無機層與一底膜之結構、一形成於該第一無機層與該底膜之間的一緩衝層與/或一散射層之結構,或可視需求由一粘合層使一載體膜或一阻擋膜附著於該底膜下之結構。
一有機材料層係設於該第一與該第二電極層之間。該有機材料層可包括至少一或兩個發光單元。在此結構中,從發光單元產生的光可透過一反射電極層之反射,發射至一透明電極層。
當至少兩個發光單元存在時,為使適當地發射,
複數個發光單元之間可更設置一中間電極層或一電荷產生層。因此,該些發光單元可被具有電荷產生特性之中間電極層或電荷產生層(CGL)所劃分。
構成該發光單元之材料並無特別限制。該發光單元之形成可選用習知具有多種發射中心波長的螢光或磷光有機材料與習知材料中合適之材料類型。用於該發光單元之材料可為,但不限於一Alq系材料,如三(4-甲基-8-喹啉)鋁(III)(tris(4-methyl-8-quinolinolate)aluminum(III),Alq3)、4-MAlq3或Gaq3;一環戊二烯衍生物,如C-545T(C26H26N2O2S)、DSA-胺(DSA-amine)、TBSA、BTP、PAP-NPA、螺旋-FPA(spiro-FPA)、Ph3Si(PhTDAOXD)、或1,2,3,4,5-五苯-1,3-環戊二烯(1,2,3,4,5-pentaphenyl-1,3-cyclopentadiene,PPCP);4,4’-雙(2,2’-二苯基乙烯基)-1,1’-聯苯(4,4’-bis(2,2’-diphenylvinyl)-1,1’-biphenyl,DPVBi)、二苯乙烯基苯(distyryl benzene)或其衍生物;4-(二氰基亞甲基)-2-三-丁基-6-(1,1,7,7,-四甲基久洛尼定-9-烯基)-4氫-砒喃(4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7,-tetramethyljulolidyl-9-enyl)-4H-pyran,DCJTB)、DDP、AAAP或NPAMLI;或一磷光材料,如Firpic、m-Firpic、N-Firpic、bon2Ir(acac)、(C6)2Ir(acac)、bt2Ir(acac)、dp2Ir(acac)、bzq2Ir(acac)、bo2Ir(acac)、F2Ir(bpy)、F2Ir(acac)、op2Ir(acac)、ppy2Ir(acac)、tpy2Ir(acac)、面-三[2-(4,5’-二氟苯基)吡啶-C’2,N]銥(III)(fac-tris[2-(4,5’-difluorophenyl)pyridine-C’2,N]iridium(III),FIrppy),或雙(2-(2’-苯並[4,5-a]噻吩)吡咬-N,C3’)銥(乙醯
丙酮基)(bis(2-(2’-benzo[4,5-a]thienyl)pyridinato-N,C3’)iridium(acetylactonate),Btp2Ir(acac))。該發光層可包括上述材料作為一主體,以及一包括苝(perylene)、二苯乙烯聯苯類(distyrylbiphenyl)、DPT、喹吖酮(quinacridone)、紅螢烯(rubrene)、BTX、ABTX或DCJTB之一主體-摻雜物系統作為一摻雜物。
該發光單元亦可由使用一個合適的化合物所形成,該合適的化合物可展示一發光特性,該發光特性係由下面所述之該電子接受有機化合物以及該電子提供有機化合物中選擇。
該有機材料層可形成於各種結構,該些結構可更包括各種其他習知的功能層,只要有包括該發光單元即可。一可被包括於該有機材料層之層可為一電子注入層、一電洞阻擋層、一電子傳輸層、一電洞傳輸層或一電洞注入層。
該電子注入層或該電子傳輸層可使用,例如一電子接受有機化合物所形成。於此,該電子接受有機化合物可使用一習知可任選之化合物,而且並無特別限制。當作為一有機化合物時,可使用一多環化合物如p-三苯(p-terphenyl)或四苯(quaterphenyl)或其衍生物;一多環烴類化合物如荼(naphthalene)、稠四苯(tetracene)、芘(pyrene)、蔻(coronene)、苯并菲(chrysene)、蔥(anthracene)、二苯蔥(diphenylanthracene)、稠四苯(naphthacene),或菲(phenanthrene)或其衍生物;或一雜環化合物如鄰二氮菲
(phenanthroline)、紅菲繞啉(bathophenanthroline)、啡啶(phenanthridine)、吖啶(acridine)、奎林(quinoline)、奎喏林(quinoxaline),或吩嗪(phenazine)或其衍生物。除此之外,熒光素(fluoroceine)、苝(perylene)、酞並花(phthaloperylene)、萘二甲酰芘(naphthaloperylene)、芘酮(perynone)、酞並週因酮(phthaloperynone)、萘並苝酮(naphthaloperynone)、二苯丁二烯(diphenylbutadiene)、四苯丁二烯(tetraphenylbutadiene)、噁二唑(oxadiazole)、醛連氮(aldazine)、雙苯噁唑林(bisbenzoxazoline)、雙苯乙烯基(bisstyryl)、吡嗪(pyrazine)、環戊二烯(cyclopentadiene)、羥喹啉(oxine)、胺喹啉(aminoquinoline)、亞胺(imine)、二苯乙烯(diphenylethylene)、乙烯蔥(vinylanthracene)、二胺咔唑(diaminocarbazole)、砒喃(pyrane)、硫代砒喃(thiopyrane)、多次甲基(polymethine)、部花青素(merocyanine)、喹吖酮(quinacridone)、紅螢烯(rubrene)或其衍生物;於日本公開第1988-295695號、日本公開第1996-22557號、日本公開第1996-81472號、日本公開第1993-009470號、或日本公開第1993-017764號所揭示之金屬螯合錯合化合物,例如,具有至少一金屬螯合喹啉化合物(metal chelated oxinoid compounds)之金屬複合物,如包含三(8-喹啉)鋁(tris(8-quinolinolato)aluminum)、雙(8-喹啉)鎂(bis(8-quinolinolato)magnesium)、雙[苯並(f)-8-喹啉]鋅(bis[benzo(f)-8-quinolinolato]zinc)、雙(2-甲基-8-喹啉)鋁(bis(2-methyl-8-quinolinolato)aluminum)、三(8-喹啉)銦
(tris(8-quinolinolato)indium)、三(5-甲基-8-喹啉)鋁(tris(5-methyl-8-quinolinolato)aluminum)、8-喹啉鋰(8-quinolinolatolithium)、三(5-氯-8-喹啉)鎵(tris(5-chloro-8-quinolinolato)gallium)、雙(5-氯-8-喹啉)鈣(bis(5-chloro-8-quinolinolato)calcium)及其衍生物之8-喹啉(8-quinolatos)以作為一配位基;如日本專利申請公開第1993-202011號、如日本專利申請公開第1995-179394號、如日本專利申請公開第1995-278124號,或如日本專利申請公開第1995-228579號等專利公開所揭示之噁唑化合物(oxadiazole compound);如日本公開第1995-157473號之專利公開所揭示之三氮雜苯化合物(triazine compound);如日本專利申請公開第1994-203963號之專利公開所揭示之二苯乙烯衍生物(stilbene derivative);一雙芪類衍生物(distyrylarylene derivative);如日本專利申請公開第1994-132080號或日本專利申請公開第1994-88072號之專利公開所揭示之苯乙烯基衍生物(styryl derivative);如日本專利申請公開第1994-100857號或日本專利申請公開第1994-207170號之專利公開中所揭示之二烯衍生物(diolefin derivative);如苯並噁唑化合物(benzooxazole compound)、苯並唑化合物(benzothiazole compound)或苯咪唑化合物(benzoimidazole compound)之螢光增白劑;如1,4-雙(2-甲基苯乙烯基)苯(1,4-bis(2-methylstyryl)benzene)、1,4-雙(3-甲基苯乙烯基)苯(1,4-bis(3-methylstyryl)benzene)、1,4-雙(4-甲基苯乙烯基)苯(1,4-bis(4-methylstyryl)benzene)、二苯乙烯基苯
(distyrylbenzene)、1,4-雙(2-乙基乙烯基)苯基(1,4-bis(2-ethylstyryl)benzyl)、1,4-雙(3-乙基乙烯基)苯(1,4-bis(3-ethylstyryl)benzene)、1,4-雙(2-甲基乙烯基)-2-甲基苯(1,4-bis(2-methylstyryl)-2-methylbenzene),或1,4-雙(2-甲基乙烯基)-2-乙基苯(1,4-bis(2-methylstyryl)-2-ethylbenzene)之二苯乙烯基化合物(distyrylbenzene compound);如2,5-雙(4甲基乙烯基)吡嗪(2,5-bis(4-methylstyryl)pyrazine)、2,5-雙(4-乙基乙烯基)吡嗪(2,5-bis(4-ethylstyryl)pyrazine)、2,5-雙[2-(1-萘基)乙烯基]吡嗪(2,5-bis[2-(1-naphthyl)vinyl]pyrazine)、2,5-雙(4-甲氧基乙烯基)吡嗪(2,5-bis(4-methoxystyryl)pyrazine)、2,5-雙[2-(4-聯苯)乙烯基]吡嗪(2,5-bis[2-(4-biphenyl)vinyl]pyrazine),或2,5-雙[2-(1-芘基)乙烯基]吡嗪(2,5-bis[2-(1-pyrenyl)vinyl]pyrazine)之二苯乙烯基吡嗪化合物(distyrylpyrazine compound);如1,4-亞苯基二亞甲基(1,4-phenylenedimethylidene)、4,4’-亞苯基二亞甲基(4,4’-phenylenedimethylidene)、2,5-二甲苯二亞甲基(2,5-xylene dimethylidene)、2,6-亞萘基二亞甲基(2,6-naphthylenedimethylidene)、1,4-亞聯苯基二亞甲基(1,4-biphenylenedimethylidene)、1,4-對-三聯苯基二亞甲基(1,4-para-terephenylene dimethylidene)、9,10-蒽基二亞甲基(9,10-anthracenediyldimethylidine),或4,4’-(2,2-二-叔-丁基苯基乙烯)聯苯(4,4’-(2,2-di-ti-butylphenylvinyl)biphenyl),或4,4’-(2,2-二苯基乙烯)聯苯(4,4’-(2,2-diphenylvinyl)biphenyl)或其衍生物之二亞甲基
化合物(dimethylidene compound);如日本專利申請公開第1994-49079號或日本專利公開第1994-293778號之專利公開所揭示之三甲基矽基衍生物(silanamine derivative);如日本專利申請公開第1994-279322號或日本專利申請公開第1994-279323號之專利公開所揭示之多官能基苯乙烯基化合物;如日本專利申請公開第1994-107648號或日本專利申請公開第1994-092947號之專利公開所揭示之噁唑衍生物;如日本專利申請公開第1994-206865號之專利公開所揭示之蔥化合物(anthracene compound);如日本專利申請公開第1994-145146號之專利公開所揭示之喹啉衍生物(oxinate derivative);如日本專利申請公開第1992-96990號之專利公開所揭示之四苯丁二烯化合物(tetraphenyl butadiene compound);如日本專利申請公開第1991-296595號之專利公開所揭示之有機三官能基化合物;如日本專利申請公開第1990-191694號之專利公開所揭示之香豆素衍生物(coumarin derivative);如日本專利申請公開第1990-196885號之專利公開所揭示之苝衍生物(perylene derivative);如日本專利申請公開第1990-255789號之專利公開所揭示之荼衍生物(naphthalene derivative);如日本專利申請公開第1990-289676號或日本專利申請公開第1990-88689號之專利公開所揭示酞苝酮衍生物(phthaloperynone derivative);或如日本專利申請公開第1990-250292號之專利公開所揭示之苯乙烯基胺衍生物(styryl amine derivative),可用以作為包含於一低折射層之電子接受有機化合物。除此之外,該電子注
入層可使用,例如,如LiF或CsF之材料所形成。
該電洞阻擋層可為一可藉由防止所注入的電洞穿過發光單元而到達電子注入電極層以增強該裝置之壽命以及效率之層,以及該電洞阻擋層可視需求以習知材料形成一於該發光層以及該電子注入電極層間之適當的部分。
該電洞注入層或電洞傳輸層可包括,例如,一電子提供有機化合物。作為該電子提供有機化合物,可使用N,N’,N’-四苯基-4,4’-二胺苯基(N,N’,N’-tetraphenyl-4,4’-diaminophenyl)、N,N’-二苯基-N,N’-二(3-甲基苯基)-4,4’-二胺苯基(N,N’-diphenyl-N,N’-di(3-methylphenyl)-4,4’-diaminobiphenyl)、2,2-雙(4-二-p-甲苯基胺基苯基)丙烷(2,2-bis(4-di-p-tollylaminophenyl)propane)、N,N,N’,N’-四-p-甲苯-4,4’-二胺聯苯基(N,N,N’,N’-tetra-p-tollyl-4,4’-diaminobiphenyl)、雙(4-二-p-甲苯胺苯基)苯基甲烷(bis(4-di-p-tollylaminophenyl)phenylmethane)、N,N’-二苯基-N,N’-二(4-甲氧基苯基)-4,4’-二胺聯苯基(N,N’-diphenyl-N,N’-di(4-methoxyphenyl)-4,4’-diaminobiphenyl)、N,N,N’,N’-四苯基-4,4’-二胺二苯基醚(N,N,N’,N’-tetraphenyl-4,4’-diaminodiphenylether)、4,4’-雙(二苯基胺基)四聯苯(4,4’-bis(diphenylamino)quadriphenyl)、4-N,N-二苯基胺-(2-二苯基乙烯基)苯(4-N,N-diphenylamino-(2-diphenylvinyl)benzene)、3-甲氧基-4’-N,N-二苯基胺基苯乙烯基苯(3-methoxy-4’-N,N-diphenylaminostyrylbenzene)、N-苯咔唑
(N-phenylcarbazole)、1,1-雙(4-二-p-三胺基苯基)環己烷(1,1-bis(4-di-p-triaminophenyl)cyclohexane)、1,1-雙(4-二-p-三胺基苯基)-4-苯基環己烷(1,1-bis(4-di-p-triaminophenyl)-4-phenylcyclohexane)、雙(4-二甲基胺基-2-甲基苯基)苯基甲烷(bis(4-dimethylamino-2-methylphenyl)phenylmethane)、N,N,N-三(p-甲苯)胺(N,N,N-tri(p-tollyl)amine)、4-(二-p-甲苯胺基)-4’-[4-(二-p-甲苯基胺基)苯乙烯基]二苯乙烯(4-(di-p-tollylamino)-4’-[4-(di-p-tollylamino)styryl]stilbene)、N,N,N’,N’-四苯基-4,4’-二胺基聯苯基N-苯基咔唑(N,N,N’,N’-tetraphenyl-4,4’-diaminobiphenyl N-phenylcarbazole)、4,4’-雙[N-(1-萘基)-N-苯基-胺基]聯苯(4,4’-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl)、4,4”-雙[N-(1-萘基)-N-苯基胺基]p-三苯(4,4”-bis[N-(1-naphthyl)-N-phenylamino]p-terphenyl)、4,4’-雙[N-(2-萘基)-N-苯基胺基]聯苯(4,4’-bis[N-(2-naphthyl)-N-phenylamino]biphenyl)、4,4’-雙[N-(3-乙烷合萘基)-N-苯基胺基]聯苯(4,4’-bis[N-(3-acenaphthenyl)-N-phenylamino]biphenyl)、1,5-雙[N-(1-萘基)-N-苯基胺基]萘(1,5-bis[N-(1-naphthyl)-N-phenylamino]naphthalene)、4,4’-雙[N-(9-蒽基)-N-苯基胺基]聯苯基苯基胺基]聯苯(4,4’-bis[N-(9-anthryl)-N-phenylamino]biphenylphenylamino]biphenyl)、4,4”-雙[N-(1-蒽基)-N-苯基胺基]-p-三苯
(4,4”-bis[N-(1-anthryl)-N-phenylamino]-p-terphenyl)、4,4’-雙[N-(2-菲基)-N-苯基胺基]聯苯(4,4’-bis[N-(2-phenanthryl)-N-phenylamino]biphenyl)、4,4’-雙[N-(8-丙[二]烯合茀基)-N-苯基胺基]聯苯(4,4’-bis[N-(8-fluoranthenyl)-N-phenylamino]biphenyl)、4,4’-雙[N-(2-芘基)-N-苯基胺基]聯苯(4,4’-bis[N-(2-pyrenyl)-N-phenylamino]biphenyl)、4,4’-雙[N-(2-苝基)-N-苯基胺基]聯苯(4,4’-bis[N-(2-perylenyl)-N-phenylamino]biphenyl)、4,4’-雙[N-(1-暈苯基)-N-苯基胺基]聯苯(4,4’-bis[N-(1-coronenyl)-N-phenylamino]biphenyl)、2,6-雙(二-p-甲苯基胺基)荼(2,6-bis(di-p-tollylamino)naphthalene)、2,6-雙[二-(1-萘基)胺基]荼(2,6-bis[di-(1-naphthyl)amino]naphthalene)、2,6-雙[N-(1-萘基)-N-(2-萘基)胺基]荼(2,6-bis[N-(1-naphthyl)-N-(2-naphthyl)amino]naphthalene)、4,4’-雙[N,N-二(2-萘基)胺基]三苯(4,4’-bis[N,N-di(2-naphthyl)amino]terphenyl)、4,4’-雙{N-苯基-N-[4-(1-萘基)苯基]胺基}聯苯(4,4’-bis{N-phenyl-N-[4-(1-naphthyl)phenyl]amino}biphenyl)、4,4’-雙[N-苯基-N-(2-芘基)胺基]聯苯(4,4’-bis[N-phenyl-N-(2-pyrenyl)amino]biphenyl)、2,6-雙[N,N-二-(2-萘基)胺基]氟(2,6-bis[N,N-di-(2-naphthyl)amino]fluorine)或4,4”-雙(N,N-
二-p-甲基基胺基)三苯(4,4”-bis(N,N-di-p-tollylamino)terphenyl),或如雙(N-1-萘基)(N-2-萘基)胺(bis(N-1-naphthyl)(N-2-naphthyl)amine)之芳基胺化合物,但本發明並不限於此。
該電洞注入層或電洞傳輸層之形成,可透過將一有機化合物分散於一聚合物或使用衍生自該有機化合物之聚合物。除此之外,可使用如聚對亞苯基乙烯(polyparaphenylenevinylene)及其衍生物之π-共軛聚合物,如聚(N-乙烯基咔唑)(poly(N-vinylcarbazole))之電洞傳輸非-共軛聚合物,或聚矽烷之σ-共軛聚合物。
該電洞注入層之形成可使用一導電聚合物,例如一金屬酞菁如銅酞菁或無金屬酞菁、一碳膜及聚苯胺,或者該電洞注入層之形成可使用該芳基胺化合物作為氧化劑與路易士酸進行反應。
該有機材料層之一具體結構並無特別限制。各種用於形成一電洞或一電子注入電極層與一有機層,例如,一發光單元、一電子注入或傳輸層,或一電洞注入或傳輸層之材料與方法都係於本領域中習知之材料與方法,並且所有習知之方法都可用於製造該OED。
該OED之上部區域可包括一無機材料層與一覆蓋膜由一頂部方向依次形成,為了區別包括在該OED之基板中的無機材料層,包括在該上部區域中的無機材料層可以被稱為一第二無機材料層,而包括在該基板中的無機材料層可被稱為一第一無機材料層。
該第二無機材料層之存在,係以防止、抑制或減少外部材料之滲透,以得到耐久性,並且,用於該第二無機材料層之形成的具體材料與形成方法可與所述用於該第一無機材料層之形成的材料與方法類別相似。然而,與該第一無機材料層相同係當該第二無機材料層係設計為發射光至該基板區域時,該第二無機材料層則無需具有一高折射率。
設於該第二無機材料層上之一覆蓋膜可為一用於保護OED之結構,例如,一習知之阻擋膜、一金屬板或一導電膜,又或者,一包括至少上述兩種結構之堆疊結構。該上部區域中的覆蓋膜可由一粘合層,如上述具有阻擋性之粘合層,附著於該第二無機材料層之頂面。
在另一方面,本發明提供一種OED之使用方法,例如,一OLED。該OLED可被有效地應用於一液晶顯示器(LCD)、一照明裝置、一感測器之背光源、一印表機或影印機之光源、一用於一汽車儀表板、一信號光、一指示燈、一顯示裝置之光源、一用於一平面發光裝置、一顯示器、裝飾之光源或其它種類的光。於一實例中,本發明係關於一種包括該OLED之照明裝置。當該OLED被應用於該照明裝置或用於不同用途時,其他構成該裝置之組件或構成該裝置之方法並無特別限制,且只要該OLED有被使用,所有相關領域中可選之材料或方法都可被使用。
依本發明所述,一基板可用於製造一可撓式裝置,該可撓式裝置可呈現合適的霧度,且可具有優異的物理特性,如透光率,並且在需要時也可具有優異的物理特性,如表面
平滑性與折射率。
於下文中,本發明之示例性實施例將以本發明之具體實例詳細地加以說明。然而,下述之實施例僅用以說明,並非意圖限制本發明之示例性實施例之範圍。
一第一聚醯胺酸溶液(折射率:約1.625)之合成係透過3,3',4,4'-聯苯四羧酸二酐(BPDA)與對苯二胺(PDA)於一反應器中進行縮合反應以及一第二聚醯胺酸溶液(折射率:約1.56)之合成係透過BPDA與2,2'-雙(三氟甲基)聯苯胺(TFMB)於另一個反應器中進行縮合反應。用以形成一膜的混合物之製備係透過以固體重量含量5:95(該第一聚醯胺酸:該第二聚醯胺酸)的比例,混合該第一聚醯胺酸溶液與該第二聚醯胺酸溶液,並使用攪拌器攪拌該混合物16小時以上。隨後,一聚醯亞胺基板(A)之合成係藉由將用以形成一膜的混合物旋轉塗佈於一約20μm之玻璃基板上,將所得的玻璃基板以大約2℃/分鐘的速率在烘箱中加熱,並維持該基板在80℃下15分鐘,在150℃下30分鐘,在220℃下30分鐘,和在350℃下1小時,以進行醯亞胺化。根據ASTM D1003使用一霧度計HM-150分析該基板(A)的霧度約為5%,而穿透率約為85%。
一透過如製備例1中所述之相同方法製造之聚醯亞胺基板(B),不同之處在於,用以形成一膜的混合物之製備係透過以固體重量含量5:95(該第一聚醯胺酸:該第二聚醯胺酸)的比例,混合透過BPDA和TFMB之縮合反應製備出的第一聚醯胺酸溶液(折射率:約1.56)與透過2,2'-雙-(3,4-二羧基苯基)六氟丙烷二酐(FDA)和TFMB之縮合反應製備出的第二聚醯胺酸溶液(折射率:約1.541)。根據ASTM D1003使用一霧度計HM-150檢測所合成出之底膜的霧度約為5.12%,而穿透率約為86.4%。
一透過如製備例1中所述之相同方法製造之聚醯亞胺基板(C),不同之處在於,用以形成一膜的混合物之製備係透過以固體重量含量10:90(該第一聚醯胺酸:該第二聚醯胺酸)的比例,混合透過BPDA和TFMB之縮合反應製備出的第一聚醯胺酸溶液(折射率:約1.56)與透過FDA和TFMB之縮合反應製備出的第二聚醯胺酸溶液(折射率:約1.541)。根據ASTM D1003使用一霧度計HM-150檢測所合成出之底膜的霧度約為16.44%,而穿透率約為83.5%。
一透過如製備例1中所述之相同方法製造之聚醯亞胺基板(D),不同之處在於,用以形成一膜的混合物之製備係透過以固體重量含量10:90(該第一聚醯胺酸:該第二聚醯胺酸)的比例,混合透過BPDA和PDA之縮合反應製備
出的第一聚醯胺酸溶液(折射率:約1.625)與透過BPDA和TFMB之縮合反應製備出的第二聚醯胺酸溶液(折射率:約1.56)以及加入一具有不會展現出散射能力之粒徑範圍的高折射填充劑(金紅石TiO2,折射率:約2.8)。根據ASTM D1003使用一霧度計HM-150檢測所合成出之底膜的霧度約為9%、穿透率約為81%,而折射率約為1.8。
一透過如製備例1中所述之相同方法製造之聚醯亞胺基板(E),不同之處在於,用以形成一膜的混合物之製備係透過使用由FDA和TFMB之縮合反應製備出的一聚醯胺酸溶液(折射率:約1.541)。根據ASTM D1003使用一霧度計HM-150檢測所合成出之底膜的霧度約為1.2%,而穿透率約為92%。
一形成於由製備例1所製得之形成於該玻璃基板上的聚醯亞胺基板(A)上之OED。該OED係藉由一裝置區域之形成所製備出來的。該裝置區域係由該聚醯亞胺基板(A)上,依序使用習知材料形成一電洞注入透明電極層、一電洞傳輸層、一具有一發光波長在一約380nm至500nm之範圍內的第一發光單元、一n型有機半導體層、一p型有機半導體層、一具有一發射波長在一約500nm至700nm之範圍內的第二發光單元、一電洞阻擋層、一電子傳輸層、一電子注入層與一電子注入反射電極層,並用合適的封裝材料封裝該裝置區域。藉由一習知的方法量測所製得的OED,其
具有約35.4%的量子效率。
一形成於由製備例2所製得之形成於該玻璃基板上的聚醯亞胺基板(B)上之OED。首先,一阻擋層先形成於該聚醯亞胺基板(B)上。為獲得一最終折射率約1.8的阻隔層,該阻隔層係透過ALD交替沉積一具有折射率約1.6至1.8的Al2O3層之單沉積與一具有折射率約2.0至2.4的TiO2層之單沉積。該Al2O3層之形成係透過習知的ALD在約200℃下,交替吸附一作為前驅物之三甲基鋁層和一水(H2O)層,而該TiO2層之形成亦係透過習知的ALD在約200℃下,交替吸附一作為前驅物之TiCl4層和一水(H2O)層。在此情況下,藉由調整各Al2O3層和各TiO2層的厚度在範圍約為2nm至5nm之間,可形成一最終厚度約40nm之阻擋層。隨後,該OED係藉由一裝置區域之形成所製備出來的。該裝置區域係由該阻擋膜上,依序使用習知方法形成一電洞注入透明電極層、一電洞傳輸層、一具有一發光波長在一約380nm至500nm之範圍內的第一發光單元、一n型有機半導體層、一p型有機半導體層、一具有一發射波長在一約500nm至700nm之範圍內的第二發光單元、一電洞阻擋層、一電子傳輸層、一電子注入層與一電子注入反射電極層,並用合適的封裝材料封裝該裝置區域。藉由一習知的方法量測所製得的OED,其具有約41.6%的量子效率。
一透過如實施例1中所述之相同方法形成之
OED,不同之處在於,其使用了在製備例3中所製造的聚醯亞胺基板(C)。藉由一習知的方法量測所製得的OED,其具有約41.6%的量子效率。
一透過如實施例1中所述之相同方法形成之OED,不同之處在於,其使用了在製備例4中所製造的聚醯亞胺基板(D)。藉由一習知的方法量測所製得的OED,其具有約42%的量子效率。
一透過如實施例1中所述之相同方法形成之OED,不同之處在於,其使用了在製備例5中所製造的聚醯亞胺基板(F)。藉由一習知的方法量測所製得的OED,其具有約31.9%的量子效率。
Claims (18)
- 一種用於有機電子裝置(OED)之基板,包括:一底膜,含有四羧酸二酐與二胺化合物之縮合單元或其醯亞胺化單元,並且該底模具有百分之3至30之霧度。
- 如申請專利範圍第1項所述之基板,其中,該底膜含有一共聚合物,該共聚合物包含一第一單元,其為一第一四羧酸二酐與一第一二胺化合物之縮合單元或其醯亞胺化單元;以及一第二單元,其為一第二四羧酸二酐與一第二二胺化合物之縮合單元或其醯亞胺化單元。
- 如申請專利範圍第1項所述之基板,其中,該底膜含有一第一聚合物,該第一聚合物具有一第一單元,其為一第一四羧酸二酐與一第一二胺化合物之縮合單元或其醯亞胺化單元;以及一第二聚合物,該第二聚合物具有一第二單元,其為一第二四羧酸二酐與一第二二胺化合物之縮合單元或其醯亞胺化單元。
- 如申請專利範圍第2項或第3項所述之基板,其中,該第一單元與該第二單元之間的折射率差異之絕對值為0.01以上。
- 如申請專利範圍第2項或第3項所述之基板,其中,包含於該第一單元之極性官能基與包含於該第二單元之極性官能基的莫耳莫耳數差異之絕對值為2以上。
- 如申請專利範圍第5項所述之基板,其中,該極性官能基係為一鹵素原子、一鹵烷基、一氰基、一硝基、一烷氧基、一氰酸酯基或一硫氰酸酯基。
- 如申請專利範圍第1項所述之基板,其中,相對於100重量份之第二單元,該底膜含有3至30重量份之第一單元。
- 如申請專利範圍第1項所述之基板,其中,該底膜對一波長為550nm之光具有1.7以上之折射率。
- 如申請專利範圍第1項所述之基板,其中,該底膜具有5nm以下之均方根(RMS)。
- 如申請專利範圍第1項所述之基板,其中,該底膜中之散射粒子的比例為10重量百分比以下。
- 如申請專利範圍第1項所述之基板,更包括:一形成於該底膜之一表面之高折射層,其對一波長為550nm之光具有1.7以上之折射率。
- 如申請專利範圍第11項所述之基板,其中,該高折射層為一無機材料層。
- 如申請專利範圍第12項所述之基板,其中,該無機材料層含有一一第一子層與一第二子層之堆疊結構。
- 如申請專利範圍第13項所述之基板,其中,每個第一子層與每個第二子層的厚度為7nm以下。
- 如申請專利範圍第13項所述之基板,其中,該第一子層具有1.4至1.9之折射率,且該第二子層具有2.0至2.6之折射率。
- 一種有機電子裝置(OED),包括:如申請專利範圍第1項所述之用於OED之基板;以及一具有一第一電極層、一有機材料層與一第二電極層之裝置區域,該裝置區域係設於該基板之無機材料層上。
- 一種顯示器用之光源,包括:如申請專利範圍第16項所述之OED。
- 一種照明裝置,包括:如申請專利範圍第16項所述之OED。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20130116194 | 2013-09-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201528885A true TW201528885A (zh) | 2015-07-16 |
TWI598004B TWI598004B (zh) | 2017-09-01 |
Family
ID=53033480
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW103134119A TWI598004B (zh) | 2013-09-30 | 2014-09-30 | 用於有機電子裝置之基板 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10090473B2 (zh) |
EP (1) | EP3016087B1 (zh) |
JP (1) | JP6231206B2 (zh) |
KR (2) | KR101928598B1 (zh) |
CN (1) | CN105408948B (zh) |
TW (1) | TWI598004B (zh) |
WO (1) | WO2015047041A1 (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9985251B2 (en) * | 2014-10-28 | 2018-05-29 | The Trustees of Princeton University, Office of Technology and Trademark Licensing | Process for fabricating a porous film in a scattering layer |
EP3408878A1 (en) * | 2016-01-29 | 2018-12-05 | SABIC Global Technologies B.V. | Integrated substrate, method for the manufacture thereof, and optical devices comprising the integrated substrate |
KR102079423B1 (ko) * | 2016-10-31 | 2020-02-19 | 주식회사 엘지화학 | 폴리이미드 필름 형성용 조성물 및 이를 이용하여 제조된 폴리이미드 필름 |
KR102153509B1 (ko) * | 2018-11-05 | 2020-09-09 | 피아이첨단소재 주식회사 | 치수 안정성이 향상된 초박막 폴리이미드 필름 및 이의 제조방법 |
KR102274527B1 (ko) * | 2018-11-20 | 2021-07-07 | 주식회사 엘지화학 | 플렉서블 소자 제조용 적층체 및 이를 이용한 플렉서블 소자 제조 방법 |
JP7349253B2 (ja) | 2019-03-29 | 2023-09-22 | 株式会社カネカ | ポリアミド酸、ポリアミド酸溶液、ポリイミド、ポリイミド膜、積層体およびフレキシブルデバイス、ならびにポリイミド膜の製造方法。 |
KR102260052B1 (ko) * | 2019-09-27 | 2021-06-03 | 피아이첨단소재 주식회사 | 폴리아믹산 조성물, 폴리아믹산 조성물의 제조방법 및 이를 포함하는 폴리이미드 |
KR102260038B1 (ko) * | 2019-09-27 | 2021-06-03 | 피아이첨단소재 주식회사 | 폴리아믹산 조성물, 폴리아믹산 조성물의 제조방법 및 이를 포함하는 폴리이미드 |
KR102260048B1 (ko) * | 2019-09-27 | 2021-06-03 | 피아이첨단소재 주식회사 | 폴리아믹산 조성물, 폴리아믹산 조성물의 제조방법 및 이를 포함하는 폴리이미드 |
KR102260028B1 (ko) * | 2019-09-27 | 2021-06-03 | 피아이첨단소재 주식회사 | 폴리아믹산 조성물, 폴리아믹산 조성물의 제조방법 및 이를 포함하는 폴리이미드 |
KR102345722B1 (ko) * | 2019-11-07 | 2022-01-03 | 피아이첨단소재 주식회사 | 고내열 저유전 폴리이미드 필름 및 이의 제조방법 |
KR102347588B1 (ko) | 2019-11-07 | 2022-01-10 | 피아이첨단소재 주식회사 | 고내열 저유전 폴리이미드 필름 및 이의 제조방법 |
KR102347633B1 (ko) * | 2019-11-07 | 2022-01-10 | 피아이첨단소재 주식회사 | 유전특성이 개선된 폴리이미드 필름 및 그 제조방법 |
KR102347632B1 (ko) * | 2019-11-13 | 2022-01-10 | 피아이첨단소재 주식회사 | 저유전 폴리이미드 필름 및 이의 제조방법 |
KR102347634B1 (ko) * | 2019-11-13 | 2022-01-10 | 피아이첨단소재 주식회사 | 고접착 저유전 폴리이미드 필름 및 이의 제조방법 |
KR102396418B1 (ko) * | 2019-11-29 | 2022-05-12 | 피아이첨단소재 주식회사 | 폴리이미드 필름, 이의 제조 방법, 및 이를 포함한 연성 금속박 적층판 |
Family Cites Families (82)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61111359A (ja) * | 1984-11-06 | 1986-05-29 | Ube Ind Ltd | ポリイミド膜 |
US4720432A (en) | 1987-02-11 | 1988-01-19 | Eastman Kodak Company | Electroluminescent device with organic luminescent medium |
JPH0288689A (ja) | 1988-09-26 | 1990-03-28 | Mitsubishi Kasei Corp | 電界発光素子 |
JPH02289676A (ja) | 1989-01-13 | 1990-11-29 | Ricoh Co Ltd | 電界発光素子 |
JP2651233B2 (ja) | 1989-01-20 | 1997-09-10 | 出光興産株式会社 | 薄膜有機el素子 |
JPH02196885A (ja) | 1989-01-25 | 1990-08-03 | Asahi Chem Ind Co Ltd | 有機電界発光素子 |
JP2879080B2 (ja) | 1989-03-23 | 1999-04-05 | 株式会社リコー | 電界発光素子 |
JPH02255789A (ja) | 1989-03-29 | 1990-10-16 | Asahi Chem Ind Co Ltd | 有機電場発光素子 |
JPH03296595A (ja) | 1990-04-13 | 1991-12-27 | Kao Corp | 有機薄膜エレクトロルミネッセンス素子 |
US5166308A (en) * | 1990-04-30 | 1992-11-24 | E. I. Du Pont De Nemours And Company | Copolyimide film with improved properties |
JP2997021B2 (ja) | 1990-08-10 | 2000-01-11 | パイオニア株式会社 | 有機エレクトロルミネッセンス素子 |
JP2891783B2 (ja) | 1991-02-06 | 1999-05-17 | パイオニア株式会社 | 有機エレクトロルミネッセンス素子 |
JP2891784B2 (ja) | 1991-02-06 | 1999-05-17 | パイオニア株式会社 | 有機エレクトロルミネッセンス素子 |
JPH05202011A (ja) | 1992-01-27 | 1993-08-10 | Toshiba Corp | オキサジアゾール誘導体 |
JPH0649079A (ja) | 1992-04-02 | 1994-02-22 | Idemitsu Kosan Co Ltd | シラナミン誘導体およびその製造方法並びに該シラナミン誘導体を用いたel素子 |
JPH06107648A (ja) | 1992-09-29 | 1994-04-19 | Ricoh Co Ltd | 新規なオキサジアゾール化合物 |
JP3341090B2 (ja) | 1992-07-27 | 2002-11-05 | 株式会社リコー | オキサジアゾール誘導体ならびにその製造法 |
JP3228301B2 (ja) | 1992-09-07 | 2001-11-12 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子 |
JP3163589B2 (ja) | 1992-09-21 | 2001-05-08 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子 |
JPH06206865A (ja) | 1992-10-14 | 1994-07-26 | Chisso Corp | 新規アントラセン化合物と該化合物を用いる電界発光素子 |
JP3287421B2 (ja) | 1992-10-19 | 2002-06-04 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子 |
JPH06145146A (ja) | 1992-11-06 | 1994-05-24 | Chisso Corp | オキシネイト誘導体 |
JP3366401B2 (ja) | 1992-11-20 | 2003-01-14 | 出光興産株式会社 | 白色有機エレクトロルミネッセンス素子 |
JPH06203963A (ja) | 1993-01-08 | 1994-07-22 | Idemitsu Kosan Co Ltd | 有機エレクトロルミネッセンス素子 |
JP3214674B2 (ja) | 1993-03-26 | 2001-10-02 | 出光興産株式会社 | 新規スチリル化合物,その製造法およびそれからなる有機エレクトロルミネッセンス素子 |
JP3211994B2 (ja) | 1993-03-26 | 2001-09-25 | 出光興産株式会社 | 4官能スチリル化合物およびその製造法 |
JPH06293778A (ja) | 1993-04-05 | 1994-10-21 | Idemitsu Kosan Co Ltd | シラナミン誘導体およびその製造方法 |
JPH07157473A (ja) | 1993-12-06 | 1995-06-20 | Chisso Corp | トリアジン誘導体、その製造法及びそれを用いた電界発光素子 |
JP3300827B2 (ja) | 1993-12-21 | 2002-07-08 | 株式会社リコー | オキサジアゾール化合物およびその製造法 |
JP3539995B2 (ja) | 1993-12-21 | 2004-07-07 | 株式会社リコー | オキサジアゾール化合物およびその製造法 |
JP3496080B2 (ja) | 1993-12-24 | 2004-02-09 | 株式会社リコー | オキサジアゾール誘導体およびその製造方法 |
JP3168806B2 (ja) * | 1994-01-11 | 2001-05-21 | 信越化学工業株式会社 | ポリイミド共重合体及びその製造方法 |
US6064355A (en) | 1994-05-24 | 2000-05-16 | Texas Instruments Incorporated | Method and apparatus for playback with a virtual reality system |
DE69526614T2 (de) | 1994-09-12 | 2002-09-19 | Motorola Inc | Lichtemittierende Vorrichtungen die Organometallische Komplexe enthalten. |
JPH10180950A (ja) * | 1996-12-25 | 1998-07-07 | Lintec Corp | 防眩性ハードコートフィルム及びその製造方法 |
WO2000065670A1 (en) | 1999-04-28 | 2000-11-02 | E.I. Du Pont De Nemours And Company | Flexible organic electronic device with improved resistance to oxygen and moisture degradation |
JP2001126861A (ja) * | 1999-10-25 | 2001-05-11 | Matsushita Electric Ind Co Ltd | 有機エレクトロルミネッセンス素子 |
US7141614B2 (en) * | 2001-10-30 | 2006-11-28 | Kaneka Corporation | Photosensitive resin composition and photosensitive films and laminates made by using the same |
US6962756B2 (en) * | 2001-11-02 | 2005-11-08 | Mitsubishi Gas Chemical Company, Inc. | Transparent electrically-conductive film and its use |
JP3861758B2 (ja) | 2002-07-05 | 2006-12-20 | 株式会社豊田自動織機 | 照明装置及び表示装置 |
KR100548625B1 (ko) * | 2003-03-24 | 2006-01-31 | 주식회사 엘지화학 | 고내열성 투명 폴리이미드 전구체 및 이를 이용한 감광성수지 조성물 |
WO2004105149A1 (en) * | 2003-05-16 | 2004-12-02 | E.I. Dupont De Nemours And Company | Barrier films for plastic substrates fabricated by atomic layer deposition |
JP2005038661A (ja) | 2003-07-17 | 2005-02-10 | Konica Minolta Holdings Inc | 有機エレクトロルミネッセンス素子、表示装置、照明装置及び光源 |
EP1548856A3 (en) | 2003-12-26 | 2012-08-08 | Nitto Denko Corporation | Electroluminescence device, planar light source and display using the same |
CN102290334B (zh) * | 2005-07-05 | 2015-03-11 | 日立化成株式会社 | 半导体装置的制造方法 |
US20090226642A1 (en) * | 2005-08-03 | 2009-09-10 | E. I. Du Pont De Nemours And Company | Low color polyimide compositions useful in optical type applications and methods and compositions relating thereto |
US7550194B2 (en) * | 2005-08-03 | 2009-06-23 | E. I. Du Pont De Nemours And Company | Low color polyimide compositions useful in optical type applications and methods and compositions relating thereto |
US20070066739A1 (en) * | 2005-09-16 | 2007-03-22 | General Electric Company | Coated articles of manufacture made of high Tg polymer blends |
JP2007335253A (ja) * | 2006-06-15 | 2007-12-27 | Toshiba Matsushita Display Technology Co Ltd | 有機el表示装置 |
JP5010556B2 (ja) * | 2007-08-27 | 2012-08-29 | パナソニック株式会社 | 有機el発光素子 |
DE102008031533B4 (de) | 2008-07-03 | 2021-10-21 | Pictiva Displays International Limited | Organisches elektronisches Bauelement |
US9073287B2 (en) * | 2008-12-15 | 2015-07-07 | Industrial Technology Research Insititute | Organic/inorganic multi-layered gas barrier film |
KR101370197B1 (ko) * | 2008-12-30 | 2014-03-06 | 코오롱인더스트리 주식회사 | 폴리이미드 필름 |
DE102009024411A1 (de) * | 2009-03-24 | 2010-09-30 | Osram Opto Semiconductors Gmbh | Dünnschichtverkapselung für ein optoelektronisches Bauelement, Verfahren zu dessen Herstellung und optoelektronisches Bauelement |
US9631054B2 (en) * | 2010-07-23 | 2017-04-25 | E I Du Pont De Nemours And Company | Matte finish polyimide films and methods relating thereto |
JPWO2011033751A1 (ja) * | 2009-09-18 | 2013-02-07 | 三井化学株式会社 | 透明熱可塑性ポリイミド、およびそれを含む透明基板 |
CN101885732B (zh) | 2010-06-23 | 2012-06-27 | 中国科学院上海有机化学研究所 | 硫杂环稠合的萘四羧酸二酰亚胺衍生物、及制法和应用 |
KR101660315B1 (ko) | 2010-02-11 | 2016-09-28 | 삼성전자 주식회사 | 고분자 및 이를 포함하는 조성물과 필름 |
JP2012107178A (ja) | 2010-03-31 | 2012-06-07 | Sekisui Chem Co Ltd | ポリイミド樹脂組成物 |
JPWO2012014740A1 (ja) | 2010-07-27 | 2013-09-12 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子 |
JP2012051995A (ja) | 2010-08-31 | 2012-03-15 | Kaneka Corp | ポリイミドフィルムおよびその製造方法 |
KR20120024358A (ko) | 2010-09-06 | 2012-03-14 | 주식회사 엘지화학 | 유기전자소자용 기판 및 그 제조방법 |
KR101114352B1 (ko) | 2010-10-07 | 2012-02-13 | 주식회사 엘지화학 | 유기전자소자용 기판 및 그 제조방법 |
US8547015B2 (en) * | 2010-10-20 | 2013-10-01 | 3M Innovative Properties Company | Light extraction films for organic light emitting devices (OLEDs) |
JP5921832B2 (ja) * | 2011-08-11 | 2016-05-24 | 三星電子株式会社Samsung Electronics Co.,Ltd. | ナノコンポジット、ナノコンポジットの製造方法及び面発光素子 |
JP2013076026A (ja) | 2011-09-30 | 2013-04-25 | Sekisui Chem Co Ltd | ポリイミド樹脂組成物 |
JP2013082774A (ja) | 2011-10-06 | 2013-05-09 | Kaneka Corp | 透明ポリイミドフィルムおよびその製造方法 |
KR101248019B1 (ko) * | 2011-11-17 | 2013-03-27 | 웅진케미칼 주식회사 | 열안정성이 우수한 폴리이미드 필름 및 이의 제조방법 |
TWI444114B (zh) * | 2011-12-26 | 2014-07-01 | Chi Mei Corp | 具有離型層的基板結構及其製造方法 |
JP5822352B2 (ja) * | 2012-02-10 | 2015-11-24 | 新日鉄住金化学株式会社 | 透明可撓性積層体及び積層体ロール |
KR101382170B1 (ko) * | 2012-07-03 | 2014-04-07 | 주식회사 엘지화학 | 폴리아믹산 고분자 복합체 및 이의 제조방법 |
US9365694B2 (en) * | 2012-07-27 | 2016-06-14 | Samsung Electronics Co., Ltd. | Composition including polyimide block copolymer and inorganic particles, method of preparing same, article including same, and display device including the article |
JP6274109B2 (ja) * | 2012-09-27 | 2018-02-07 | 三菱瓦斯化学株式会社 | ポリイミド樹脂組成物 |
JP6028974B2 (ja) * | 2012-11-14 | 2016-11-24 | 三星電子株式会社Samsung Electronics Co.,Ltd. | ナノコンポジット、ナノコンポジットの製造方法、及び面発光素子 |
JP5708677B2 (ja) | 2013-02-01 | 2015-04-30 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子および照明装置 |
KR101387031B1 (ko) | 2013-02-28 | 2014-04-18 | 한국과학기술원 | 유리섬유직물이 매립된 플렉시블 디스플레이용 무색투명 폴리이미드 필름 제조방법 |
US20140319488A1 (en) * | 2013-04-25 | 2014-10-30 | Veeco Ald Inc. | Thin film formation for device sensitive to environment |
TWI550000B (zh) * | 2013-07-11 | 2016-09-21 | 達邁科技股份有限公司 | 聚醯亞胺膜 |
JP6230308B2 (ja) * | 2013-07-16 | 2017-11-15 | ソマール株式会社 | 透明ポリイミド共重合体、ポリイミド樹脂組成物及び成形体、並びにこの共重合体の製造方法 |
WO2015059950A1 (ja) * | 2013-10-23 | 2015-04-30 | 日本化薬株式会社 | ポリイミド樹脂組成物、及びそれを用いた熱伝導性接着フィルム |
KR102206028B1 (ko) * | 2013-11-25 | 2021-01-21 | 삼성전자주식회사 | 신규 화합물, 상기 화합물을 이용하여 제조된 폴리(이미드-아미드) 코폴리머, 및 상기 폴리(이미드-아미드)를 포함하는 성형품 |
TWI607868B (zh) * | 2014-08-29 | 2017-12-11 | 達邁科技股份有限公司 | 聚醯亞胺膜及其製成和組合方法 |
-
2014
- 2014-09-25 KR KR1020140128376A patent/KR101928598B1/ko active IP Right Grant
- 2014-09-30 US US14/908,065 patent/US10090473B2/en active Active
- 2014-09-30 CN CN201480042230.2A patent/CN105408948B/zh active Active
- 2014-09-30 TW TW103134119A patent/TWI598004B/zh active
- 2014-09-30 EP EP14847648.4A patent/EP3016087B1/en active Active
- 2014-09-30 KR KR1020140131921A patent/KR101548881B1/ko active IP Right Grant
- 2014-09-30 JP JP2016529731A patent/JP6231206B2/ja active Active
- 2014-09-30 WO PCT/KR2014/009224 patent/WO2015047041A1/ko active Application Filing
Also Published As
Publication number | Publication date |
---|---|
EP3016087A4 (en) | 2017-03-01 |
KR20150037691A (ko) | 2015-04-08 |
JP6231206B2 (ja) | 2017-11-15 |
KR20150037574A (ko) | 2015-04-08 |
CN105408948A (zh) | 2016-03-16 |
US10090473B2 (en) | 2018-10-02 |
CN105408948B (zh) | 2018-09-18 |
KR101928598B1 (ko) | 2018-12-12 |
JP2016533005A (ja) | 2016-10-20 |
US20160172591A1 (en) | 2016-06-16 |
EP3016087A1 (en) | 2016-05-04 |
EP3016087B1 (en) | 2021-03-31 |
KR101548881B1 (ko) | 2015-09-01 |
TWI598004B (zh) | 2017-09-01 |
WO2015047041A1 (ko) | 2015-04-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI598004B (zh) | 用於有機電子裝置之基板 | |
EP3016090B1 (en) | Method for manufacturing an organic electronic device | |
JP6672152B2 (ja) | 有機電子素子用基板およびこの製造方法 | |
JP6253070B2 (ja) | 有機電子素子用基板およびこの製造方法 | |
EP2977199B1 (en) | Substrate for organic electronic device | |
TWI663758B (zh) | 用於有機電子裝置之基板 | |
KR20150080909A (ko) | 유기전자소자용 기판 |