JP2016519443A5 - - Google Patents

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Publication number
JP2016519443A5
JP2016519443A5 JP2016515344A JP2016515344A JP2016519443A5 JP 2016519443 A5 JP2016519443 A5 JP 2016519443A5 JP 2016515344 A JP2016515344 A JP 2016515344A JP 2016515344 A JP2016515344 A JP 2016515344A JP 2016519443 A5 JP2016519443 A5 JP 2016519443A5
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JP
Japan
Prior art keywords
layer
amorphous
high mobility
depositing
metal oxide
Prior art date
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Pending
Application number
JP2016515344A
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English (en)
Japanese (ja)
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JP2016519443A (ja
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Publication date
Priority claimed from US13/902,514 external-priority patent/US9356156B2/en
Application filed filed Critical
Publication of JP2016519443A publication Critical patent/JP2016519443A/ja
Publication of JP2016519443A5 publication Critical patent/JP2016519443A5/ja
Pending legal-status Critical Current

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JP2016515344A 2013-05-24 2014-05-07 安定した高移動度のｍｏｔｆｔおよび低温での製作 Pending JP2016519443A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/902,514 2013-05-24
US13/902,514 US9356156B2 (en) 2013-05-24 2013-05-24 Stable high mobility MOTFT and fabrication at low temperature
PCT/US2014/037191 WO2014189681A2 (en) 2013-05-24 2014-05-07 Stable high mobility motft and fabrication at low temperature

Publications (2)

Publication Number Publication Date
JP2016519443A JP2016519443A (ja) 2016-06-30
JP2016519443A5 true JP2016519443A5 (enExample) 2017-12-07

Family

ID=51934313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016515344A Pending JP2016519443A (ja) 2013-05-24 2014-05-07 安定した高移動度のｍｏｔｆｔおよび低温での製作

Country Status (6)

Country Link
US (2) US9356156B2 (enExample)
EP (1) EP3005420A4 (enExample)
JP (1) JP2016519443A (enExample)
KR (1) KR20160012165A (enExample)
CN (1) CN105308753A (enExample)
WO (1) WO2014189681A2 (enExample)

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US9412623B2 (en) * 2011-06-08 2016-08-09 Cbrite Inc. Metal oxide TFT with improved source/drain contacts and reliability
US9362413B2 (en) * 2013-11-15 2016-06-07 Cbrite Inc. MOTFT with un-patterned etch-stop
US9136355B2 (en) * 2013-12-03 2015-09-15 Intermolecular, Inc. Methods for forming amorphous silicon thin film transistors
FR3024589B1 (fr) * 2014-07-29 2017-12-08 Commissariat Energie Atomique Dispositif electronique et son procede de fabrication
US20160313282A1 (en) * 2015-04-27 2016-10-27 Chan-Long Shieh Motft and array circuit for chemical/biochemical applications
US9515158B1 (en) 2015-10-20 2016-12-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with insertion layer and method for manufacturing the same
US9496415B1 (en) 2015-12-02 2016-11-15 International Business Machines Corporation Structure and process for overturned thin film device with self-aligned gate and S/D contacts
JP2017143135A (ja) * 2016-02-09 2017-08-17 株式会社ジャパンディスプレイ 薄膜トランジスタ
KR102640383B1 (ko) 2016-03-22 2024-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 상기 반도체 장치를 포함하는 표시 장치
WO2017208109A1 (en) 2016-06-03 2017-12-07 Semiconductor Energy Laboratory Co., Ltd. Sputtering target, oxide semiconductor, oxynitride semiconductor, and transistor
CN107749422A (zh) * 2017-09-21 2018-03-02 信利（惠州）智能显示有限公司 氧化物半导体薄膜晶体管
KR20250053970A (ko) 2018-03-12 2025-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 금속 산화물 및 금속 산화물을 포함한 트랜지스터
KR102163565B1 (ko) * 2018-12-07 2020-10-12 연세대학교 산학협력단 산화물 반도체 박막 트랜지스터
CN109638070B (zh) * 2018-12-12 2021-01-15 广州新视界光电科技有限公司 氧化物半导体材料、薄膜晶体管及制备方法和显示面板
KR102813570B1 (ko) * 2021-05-26 2025-05-27 가부시키가이샤 니콘 반도체 장치, 전자 디바이스, pH 센서, 바이오 센서, 반도체 장치의 제조 방법, 및 전자 디바이스의 제조 방법

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JP4609797B2 (ja) * 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4404881B2 (ja) * 2006-08-09 2010-01-27 日本電気株式会社 薄膜トランジスタアレイ、その製造方法及び液晶表示装置
KR101345376B1 (ko) * 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
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KR101413655B1 (ko) * 2007-11-30 2014-08-07 삼성전자주식회사 산화물 반도체 박막 트랜지스터의 제조 방법
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US8129718B2 (en) * 2008-08-28 2012-03-06 Canon Kabushiki Kaisha Amorphous oxide semiconductor and thin film transistor using the same
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JP5339825B2 (ja) * 2008-09-09 2013-11-13 富士フイルム株式会社 薄膜電界効果型トランジスタおよびそれを用いた表示装置
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KR101659105B1 (ko) * 2008-12-24 2016-09-22 쓰리엠 이노베이티브 프로퍼티즈 컴파니 금속 산화물 반도체 박막 트랜지스터의 안정성 향상
KR101034686B1 (ko) * 2009-01-12 2011-05-16 삼성모바일디스플레이주식회사 유기전계발광 표시 장치 및 그의 제조 방법
JP2010165922A (ja) * 2009-01-16 2010-07-29 Idemitsu Kosan Co Ltd 電界効果型トランジスタ、電界効果型トランジスタの製造方法及び半導体素子の製造方法
US8822988B2 (en) * 2009-03-31 2014-09-02 Hewlett-Packard Development Company, L.P. Thin-film transistor (TFT) with a bi-layer channel
JP5497417B2 (ja) * 2009-12-10 2014-05-21 富士フイルム株式会社 薄膜トランジスタおよびその製造方法、並びにその薄膜トランジスタを備えた装置
WO2012008080A1 (ja) * 2010-07-14 2012-01-19 シャープ株式会社 薄膜トランジスタ基板
US8530273B2 (en) * 2010-09-29 2013-09-10 Guardian Industries Corp. Method of making oxide thin film transistor array
JP5668917B2 (ja) * 2010-11-05 2015-02-12 ソニー株式会社 薄膜トランジスタおよびその製造方法
EP2657974B1 (en) * 2010-12-20 2017-02-08 Sharp Kabushiki Kaisha Semiconductor device and display device
JP5679933B2 (ja) * 2011-08-12 2015-03-04 富士フイルム株式会社 薄膜トランジスタ及びその製造方法、表示装置、イメージセンサー、ｘ線センサー並びにｘ線デジタル撮影装置

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