JP2016519443A - 安定した高移動度のmotftおよび低温での製作 - Google Patents
安定した高移動度のmotftおよび低温での製作 Download PDFInfo
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- JP2016519443A JP2016519443A JP2016515344A JP2016515344A JP2016519443A JP 2016519443 A JP2016519443 A JP 2016519443A JP 2016515344 A JP2016515344 A JP 2016515344A JP 2016515344 A JP2016515344 A JP 2016515344A JP 2016519443 A JP2016519443 A JP 2016519443A
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- metal oxide
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Abstract
Description
Claims (38)
- 安定した、高移動度のアモルファスMOTFTを製作する方法であって、
基板に、その上に形成されるゲートと前記ゲートの上に配置されるゲート誘電体層とを提供するステップと、
前記ゲート誘電体層に隣接したアモルファス高移動度金属酸化物の層と、前記金属酸化物の層と比べて比較的不活性な材料の保護層とを含むキャリア輸送構造を、前記ゲート誘電体層に堆積するステップと、
ほぼ室温で前記保護層の上面に隣接した酸素リッチな領域を形成するステップと、
約350℃を下回る昇温された温度で前記保護層に酸素を導入するステップと、
を備える方法。 - 前記アモルファス高移動度金属酸化物の層に前記ゲートの上に重なるチャネルエリアを画定するステップと、
前記酸素を導入するステップの後に、前記チャネルエリアの上に重なるエッチストップ層を形成するステップと、
前記チャネルエリアの対向する両側にソース/ドレイン接点エリアを画定するステップと、
前記ソース/ドレイン接点エリアの表面でクリーニング/処理/エッチングを行うステップと、
前記ソース/ドレイン接点エリアの保護層にソース/ドレイン接点を堆積してパターン化するステップと、
をさらに含む請求項1に記載の方法。 - 酸素リッチな領域を形成する前記ステップの前に、
前記アモルファス高移動度金属酸化物の層に、前記ゲートの上に重なるチャネルエリアを画定するステップと、
前記チャネルエリアの対向する両側にソース/ドレイン接点エリアを画定するステップと、
前記保護層にブランケット金属層を堆積するステップと、
前記ブランケット金属層をパターン化して、前記ソース/ドレインエリアにソース/ドレイン電極を形成するとともに、前記チャネルエリアの上に重なる前記ソース/ドレイン電極間のエリアを開くステップと、
をさらに含む、請求項1に記載の方法。 - アモルファス高移動度金属酸化物の層を堆積する前記ステップは、移動度が40cm2/Vsを上回るアモルファス金属酸化物の層を堆積するステップを含む、請求項1に記載の方法。
- アモルファス高移動度金属酸化物の層を堆積する前記ステップは、約1018cm−3から約5×1019cm−3までの範囲のキャリア濃度を持つアモルファス金属酸化物の層を堆積するステップを含む、請求項1に記載の方法。
- 前記アモルファス高移動度金属酸化物の層を堆積する前記ステップは、酸化インジウムスズ(ITO)、酸化インジウム(InO)、酸化スズ(SnO)、酸化カドミウム(CdO)、酸化亜鉛(ZnO)、酸化インジウム亜鉛(IZO)、もしくは酸化亜鉛(ZnO)、または前記金属酸化物のうちの2つ以上を含む複合膜のうちの1つを堆積するステップを含む、請求項1に記載の方法。
- 前記アモルファス高移動度金属酸化物の層を堆積する前記ステップは、約5nm以下の範囲、好ましくは約2nmの厚さを有する層を堆積するステップを含むことを特徴とする、請求項1に記載の方法。
- 前記保護層を堆積する前記ステップは、前記アモルファス高移動度金属酸化物層よりも不活性な金属酸化物を含む層を堆積するステップを含む、請求項1に記載の方法。
- 前記より不活性な金属酸化物を堆積する前記ステップは、M−Zn−O、M−In−Oまたはこれらの組合せのうちの1つの層を堆積するステップを含み、ここでMはAl、Ga、Ta、Ti、Si、Ge、Sn、Mo、W、Cu、VまたはZrを含む、請求項8に記載の方法。
- 前記保護層を堆積する前記ステップは、20nm〜50nm、好ましくは20nm〜30nmの範囲の厚さを持つ層を堆積するステップを含む、請求項1に記載の方法。
- 前記キャリア輸送構造を堆積する前記ステップは、前記アモルファス高移動度金属酸化物の層と、前記保護層とをin situで、真空破壊することなく堆積するステップを含む、請求項1に記載の方法。
- 前記キャリア輸送構造を堆積する前記ステップは、前記アモルファス高移動度金属酸化物の層および前記保護層を、160℃を下回る温度で、好ましくは意図的な基板の加熱なく堆積するステップを含む、請求項1に記載の方法。
- 前記キャリア輸送構造を堆積する前記ステップは、前記アモルファス高移動度金属酸化物の層および前記保護層を、スパッタリングにより堆積するステップを含む、請求項1に記載の方法。
- 前記アモルファス高移動度金属酸化物の層および前記保護層を、酸素のないスパッタリングによって堆積するステップを特徴とする、請求項13に記載の方法。
- 前記酸素リッチな領域を形成する前記ステップは、酸素プラズマ、N2Oプラズマ、UVオゾンプロセス、酸素リッチ自己組織化層、過酸化水素もしくは重クロム酸塩溶液を用いた表面処理、またはこれらの組合せプロセスを使用するステップを含む、請求項1に記載の方法。
- 前記酸素リッチな領域を形成する前記ステップは、160℃を下回る温度で、好ましくは100℃を下回る温度で行われる、請求項15に記載の方法。
- 前記酸素リッチな領域を形成する前記ステップは、100ミリトルを上回る圧力で行われる、請求項15に記載の方法。
- 酸素リッチ自己組織化層による前記コーティングを使用した前記酸素リッチな領域を形成する前記ステップは、4−クロロフェニルトリクロロシラン(4−CPTS)、クロロメチルトリクロロシラン(CMTS)、4−クロロフェニルホスホン酸(4−CPPA)、3−ニトロフェニルホスホン酸(3−NPPA)、2−クロロエチルホスホン酸(2−CEPA)、またはこれらの組合せのうちの1つを備える前記自己組織化層を含む、請求項15に記載の方法。
- 前記酸素源から前記保護層に酸素を導入する前記ステップは、160℃以上の昇温を用いるステップを含む、請求項1に記載の方法。
- 前記基板を提供する前記ステップは、それぞれ剛性、柔軟性または可とう性を有する形態のうちの1つで、ガラス、プラスチックフィルム、およびステンレススチールフィルムのうちの1つを含む基板を提供するステップを含む、請求項1に記載の方法。
- 前記ゲート誘電体層を提供する前記ステップは、SiO2、SiN、Al2O3、AlN、Ta2O5、TiO2、ZrO、HfO、SrO、または混合物もしくは多層形態でのこれらの組合せを含む層を提供するステップを含む、請求項1に記載の方法。
- 前記ゲート誘電体層を提供する前記ステップは、前記ゲート誘電体層を前記対応する金属から陽極酸化、酸素リッチ雰囲気での加熱、または順次これらの組合せによって形成するステップを含む、請求項21に記載の方法。
- 安定した高移動度のアモルファスMOTFTを製作する方法であって、
基板に、その上に形成されるゲートと前記ゲートの上に配置されるゲート誘電体層とを提供するステップと、
前記ゲート誘電体層に、ともに酸素なくin situで堆積される前記ゲート誘電体に隣接したアモルファス高移動度金属酸化物の層と、前記アモルファス高移動度金属酸化物の層に堆積されて、前記アモルファス高移動度金属酸化物の層と比べて比較的不活性である保護層とを、意図的な基板の加熱なく、または意図的に冷却してスパッタリングすることによりキャリア輸送構造を堆積するステップと、
160℃を下回る温度で、前記保護層の前記上面に酸素リッチな領域を形成するステップと、
昇温下で、前記酸素リッチな領域から前記保護層に酸素を導入するステップと、
その結果得られるアモルファス金属酸化物の層は、40cm2/Vsを上回る移動度および約1018cm−3から約5×1019cm−3までの範囲のキャリア濃度を有するステップと、
を備える方法。 - 前記アモルファス高移動度金属酸化物の層に前記ゲートの上に重なるチャネルエリアを画定するステップと、
前記酸素を導入するステップの後に、前記チャネルエリアの上に重なるエッチストップ層を形成するステップと、
前記チャネルエリアの対向する両側にソース/ドレイン接点エリアを画定するステップと、
前記ソース/ドレイン接点エリアの表面でクリーニング/処理/エッチングステップを行うステップと、
前記ソース/ドレイン接点エリアの前記保護層にソース/ドレイン接点を堆積してパターン化するステップと、
をさらに含む、請求項23に記載の方法。 - 酸素リッチな領域を形成する前記ステップの前に、
前記アモルファス高移動度金属酸化物の層にゲートの上に重なるチャネルエリアを画定するステップと、
前記チャネルエリアの対向する両側にソース/ドレイン接点エリアを画定するステップと、
前記保護層にブランケット金属層を堆積するステップと、
前記ブランケット金属層をパターン化して、前記ソース/ドレインエリアにソース/ドレイン電極を形成するとともに、前記チャネルエリアの上に重なる前記ソース/ドレイン電極間のエリアを開くステップと、
をさらに含む、請求項23に記載の方法。 - 前記アモルファス高移動度金属酸化物の層を堆積する前記ステップは、約5nm以下の範囲、好ましくは約2nmの厚さを持つ層を堆積するステップを含む、請求項23に記載の方法。
- 前記保護層を堆積する前記ステップは、20nm〜50nmの範囲の厚さを持つ層を堆積するステップを含む、請求項23に記載の方法。
- 40cm2/Vs以上の移動度を持つ安定した高移動度のアモルファスMOTFTであって、
基板の上に形成されているゲートと、前記ゲートの上に配置されているゲート誘電体層とを備える前記基板と、
前記ゲート誘電体層上に設けられ、前記ゲート誘電体に隣接したアモルファス高移動度金属酸化物の層と、前記金属酸化物の層に比べて比較的不活性な材料の保護層とを含むキャリア輸送構造と、
前記保護層上のソース/ドレイン接点と、
を備える安定した高移動度のアモルファスMOTFT。 - 前記アモルファス高移動度金属酸化物の層は、約1018cm−3から約5×1019cm−3までの範囲のキャリア濃度を含む、請求項28に記載の安定した高移動度のアモルファスMOTFT。
- 前記アモルファス高移動度金属酸化物の層は、酸化インジウムスズ(ITO)、酸化インジウム(InO)、酸化スズ(SnO)、酸化カドミウム(CdO)、酸化亜鉛(ZnO)、酸化インジウム亜鉛(IZO)、またはこれらの組合せを備える複合膜のうちの1つを含む、請求項28に記載の安定した高移動度のアモルファスMOTFT。
- 前記アモルファス高移動度金属酸化物の層は、約5nm以下の範囲、好ましくは約2nmの範囲の厚さを有する、請求項28に記載の安定した高移動度のアモルファスMOTFT。
- 前記保護層は前記アモルファス高移動度金属酸化物層よりも不活性な金属酸化物を含む、請求項28に記載の安定した高移動度のアモルファスMOTFT。
- 前記不活性な金属酸化物は、M−Zn−O、M−In−O、またはこれらの組合せのうちの1つを含み、ここでMはAl、Ga、Ta、Ti、Si、Ge、Sn、Mo、W、Cu、Mg、VまたはZrのうちの少なくとも1つを含む、請求項32に記載の安定した高移動度のアモルファスMOTFT。
- 前記保護層は20nm〜50nmの範囲の厚さを持つ層を含む、請求項28に記載の安定した高移動度のアモルファスMOTFT。
- 前記MOTFTは薄膜電気回路に内蔵されている、請求項28に記載の安定した高移動度のアモルファスMOTFT。
- 前記薄膜電気回路はディスプレイアレイデバイス、イメージャセンサアレイデバイス、圧力センサアレイデバイス、タッチセンサアレイデバイス、化学センサアレイデバイス、またはバイオセンサアレイデバイスのうちの1つを含む電子デバイスに内蔵されている、請求項35に記載の安定した高移動度のアモルファスMOTFT。
- 前記薄膜電気回路は、前記アレイ内部のピクセル・ドライバもしくは読出し回路、または前記アレイの周辺エリアの行列ドライバ回路に内蔵されている、請求項36に記載の安定した高移動度のアモルファスMOTFT。
- 安定した高移動度のアモルファスMOTFTであって、
基板の上に形成されているゲートと、前記ゲートの上に配置されているゲート誘電体層とを有する前記基板と、
前記ゲート誘電体層上にスパッタリングされて、前記ゲート誘電体に隣接した約5nm以下の範囲、好ましくは約2nmの厚さを持つアモルファス高移動度金属酸化物の層と、前記アモルファス高移動度金属酸化物の層上に20nm〜50nmの範囲の厚さで堆積されている比較的不活性な材料の保護層とを含むキャリア輸送構造であって、前記アモルファス金属酸化物の層は40cm2/Vsを上回る移動度および約1018cm−3から約5×1019cm−3の範囲のキャリア濃度を有する、キャリア輸送構造と、
前記保護層上に位置付けられて、前記保護層と電気接触しているソース/ドレイン接点と、
を備える安定した高移動度のアモルファスMOTFT。
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PCT/US2014/037191 WO2014189681A2 (en) | 2013-05-24 | 2014-05-07 | Stable high mobility motft and fabrication at low temperature |
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JP2017143135A (ja) * | 2016-02-09 | 2017-08-17 | 株式会社ジャパンディスプレイ | 薄膜トランジスタ |
KR20200069472A (ko) * | 2018-12-07 | 2020-06-17 | 연세대학교 산학협력단 | 산화물 반도체 박막 트랜지스터 |
WO2022249872A1 (ja) * | 2021-05-26 | 2022-12-01 | 株式会社ニコン | 半導体装置、電子デバイス、pHセンサ、バイオセンサ、半導体装置の製造方法、及び電子デバイスの製造方法 |
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CN107749422A (zh) * | 2017-09-21 | 2018-03-02 | 信利(惠州)智能显示有限公司 | 氧化物半导体薄膜晶体管 |
US11387330B2 (en) | 2018-03-12 | 2022-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Metal oxide and transistor including metal oxide |
CN109638070B (zh) * | 2018-12-12 | 2021-01-15 | 广州新视界光电科技有限公司 | 氧化物半导体材料、薄膜晶体管及制备方法和显示面板 |
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Also Published As
Publication number | Publication date |
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US20170033202A1 (en) | 2017-02-02 |
KR20160012165A (ko) | 2016-02-02 |
WO2014189681A3 (en) | 2015-05-07 |
US9356156B2 (en) | 2016-05-31 |
EP3005420A2 (en) | 2016-04-13 |
CN105308753A (zh) | 2016-02-03 |
EP3005420A4 (en) | 2017-01-04 |
US20140346495A1 (en) | 2014-11-27 |
WO2014189681A2 (en) | 2014-11-27 |
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