KR20160012165A - 안정한 고 이동성 ｍｏｔｆｔ 및 그것의 저온 제조 방법 - Google Patents

안정한 고 이동성 ｍｏｔｆｔ 및 그것의 저온 제조 방법 Download PDF

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KR20160012165A
KR20160012165A KR1020157035554A KR20157035554A KR20160012165A KR 20160012165 A KR20160012165 A KR 20160012165A KR 1020157035554 A KR1020157035554 A KR 1020157035554A KR 20157035554 A KR20157035554 A KR 20157035554A KR 20160012165 A KR20160012165 A KR 20160012165A
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layer
amorphous
metal oxide
motft
depositing
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Korean (ko)
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찬롱 시에
강 유
팻 풍
위르겐 무솔프
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씨비라이트 인코퍼레이티드
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Vapour Deposition (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020157035554A 2013-05-24 2014-05-07 안정한 고 이동성 ｍｏｔｆｔ 및 그것의 저온 제조 방법 Withdrawn KR20160012165A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/902,514 2013-05-24
US13/902,514 US9356156B2 (en) 2013-05-24 2013-05-24 Stable high mobility MOTFT and fabrication at low temperature
PCT/US2014/037191 WO2014189681A2 (en) 2013-05-24 2014-05-07 Stable high mobility motft and fabrication at low temperature

Publications (1)

Publication Number Publication Date
KR20160012165A true KR20160012165A (ko) 2016-02-02

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Country Status (6)

Country Link
US (2) US9356156B2 (enExample)
EP (1) EP3005420A4 (enExample)
JP (1) JP2016519443A (enExample)
KR (1) KR20160012165A (enExample)
CN (1) CN105308753A (enExample)
WO (1) WO2014189681A2 (enExample)

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