JP2016213444A5 - - Google Patents
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- Publication number
- JP2016213444A5 JP2016213444A5 JP2016078408A JP2016078408A JP2016213444A5 JP 2016213444 A5 JP2016213444 A5 JP 2016213444A5 JP 2016078408 A JP2016078408 A JP 2016078408A JP 2016078408 A JP2016078408 A JP 2016078408A JP 2016213444 A5 JP2016213444 A5 JP 2016213444A5
- Authority
- JP
- Japan
- Prior art keywords
- trench structure
- layer
- block
- deprotected
- block copolymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000000034 method Methods 0.000 claims 29
- 239000000463 material Substances 0.000 claims 24
- 239000000126 substance Substances 0.000 claims 17
- 229920001400 block copolymer Polymers 0.000 claims 12
- 229910052751 metal Inorganic materials 0.000 claims 10
- 239000002184 metal Substances 0.000 claims 10
- 150000002738 metalloids Chemical group 0.000 claims 10
- 239000000758 substrate Substances 0.000 claims 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical group O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 6
- 238000000151 deposition Methods 0.000 claims 5
- 239000002253 acid Substances 0.000 claims 4
- 230000005670 electromagnetic radiation Effects 0.000 claims 4
- 238000011049 filling Methods 0.000 claims 4
- 150000002500 ions Chemical class 0.000 claims 4
- 238000001338 self-assembly Methods 0.000 claims 4
- 238000003486 chemical etching Methods 0.000 claims 2
- 239000003795 chemical substances by application Substances 0.000 claims 2
- 229920001577 copolymer Polymers 0.000 claims 2
- KZFNONVXCZVHRD-UHFFFAOYSA-N dimethylamino(dimethyl)silicon Chemical compound CN(C)[Si](C)C KZFNONVXCZVHRD-UHFFFAOYSA-N 0.000 claims 2
- 238000004377 microelectronic Methods 0.000 claims 2
- KAHVZNKZQFSBFW-UHFFFAOYSA-N n-methyl-n-trimethylsilylmethanamine Chemical compound CN(C)[Si](C)(C)C KAHVZNKZQFSBFW-UHFFFAOYSA-N 0.000 claims 2
- 238000000059 patterning Methods 0.000 claims 2
- 230000000149 penetrating effect Effects 0.000 claims 2
- 238000001020 plasma etching Methods 0.000 claims 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims 2
- 239000004926 polymethyl methacrylate Substances 0.000 claims 2
- PWTSQLBVGYGFQK-UHFFFAOYSA-N N-(disilylmethyl)propan-2-amine Chemical compound CC(NC([SiH3])[SiH3])C PWTSQLBVGYGFQK-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000008186 active pharmaceutical agent Substances 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000002408 directed self-assembly Methods 0.000 claims 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims 1
- 238000005886 esterification reaction Methods 0.000 claims 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims 1
- 238000011068 loading method Methods 0.000 claims 1
- 239000011368 organic material Substances 0.000 claims 1
- 238000002161 passivation Methods 0.000 claims 1
- 229920000058 polyacrylate Polymers 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562145683P | 2015-04-10 | 2015-04-10 | |
| US62/145,683 | 2015-04-10 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020005678A Division JP7209429B2 (ja) | 2015-04-10 | 2020-01-17 | イメージ反転、誘導自己組織化、および選択的堆積を補助するための、サブ解像度開口部の使用 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016213444A JP2016213444A (ja) | 2016-12-15 |
| JP2016213444A5 true JP2016213444A5 (https=) | 2019-05-23 |
| JP6683342B2 JP6683342B2 (ja) | 2020-04-15 |
Family
ID=57112094
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016078408A Active JP6683342B2 (ja) | 2015-04-10 | 2016-04-08 | イメージ反転、誘導自己組織化、および選択的堆積を補助するための、サブ解像度開口部の使用 |
| JP2020005678A Active JP7209429B2 (ja) | 2015-04-10 | 2020-01-17 | イメージ反転、誘導自己組織化、および選択的堆積を補助するための、サブ解像度開口部の使用 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020005678A Active JP7209429B2 (ja) | 2015-04-10 | 2020-01-17 | イメージ反転、誘導自己組織化、および選択的堆積を補助するための、サブ解像度開口部の使用 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9633847B2 (https=) |
| JP (2) | JP6683342B2 (https=) |
| KR (1) | KR102608648B1 (https=) |
| TW (1) | TWI604510B (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9633847B2 (en) * | 2015-04-10 | 2017-04-25 | Tokyo Electron Limited | Using sub-resolution openings to aid in image reversal, directed self-assembly, and selective deposition |
| US10338466B2 (en) * | 2015-04-13 | 2019-07-02 | Tokyo Electron Limited | System and method for planarizing a substrate |
| US11306249B2 (en) | 2018-01-30 | 2022-04-19 | Tokyo Electron Limited | Substrate processing method, substrate processing device and etching liquid |
| CN111584421B (zh) * | 2019-02-15 | 2023-08-25 | 中芯国际集成电路制造(上海)有限公司 | 一种互连结构及其形成方法 |
| US11335566B2 (en) * | 2019-07-19 | 2022-05-17 | Tokyo Electron Limited | Method for planarization of spin-on and CVD-deposited organic films |
| US20210294148A1 (en) * | 2020-03-17 | 2021-09-23 | Tokyo Electron Limited | Planarizing Organic Films |
| KR102889887B1 (ko) * | 2020-12-02 | 2025-11-21 | 도쿄엘렉트론가부시키가이샤 | 패터닝된 기판 상에 형성된 개구부 내의 충전 재료를 함입하기 위한 방법 |
Family Cites Families (37)
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| JPH11135397A (ja) * | 1997-10-29 | 1999-05-21 | Hitachi Ltd | ネガ型レジストパタンの形成方法 |
| JP3398315B2 (ja) * | 1997-10-31 | 2003-04-21 | 京セラ株式会社 | 高周波素子収納用パッケージ |
| JPH11268437A (ja) * | 1998-03-19 | 1999-10-05 | Toray Ind Inc | 直描型水なし平版印刷版原版 |
| JP3337067B2 (ja) * | 1999-05-07 | 2002-10-21 | 日本電気株式会社 | 円筒形キャパシタ下部電極の製造方法 |
| JP2000347420A (ja) * | 1999-06-04 | 2000-12-15 | Hitachi Ltd | レジストパターン形成方法 |
| JP3998373B2 (ja) * | 1999-07-01 | 2007-10-24 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
| JP2001311262A (ja) * | 2000-05-01 | 2001-11-09 | Takenaka Komuten Co Ltd | アスファルト防水層の施工構造 |
| JP4392974B2 (ja) * | 2000-09-22 | 2010-01-06 | シャープ株式会社 | 半導体装置の製造方法 |
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| TW200629392A (en) * | 2004-12-22 | 2006-08-16 | Ebara Corp | Flattening method and flattening apparatus |
| JP2007193053A (ja) * | 2006-01-18 | 2007-08-02 | Sekisui Chem Co Ltd | レジスト除去方法 |
| WO2007142209A1 (ja) * | 2006-06-06 | 2007-12-13 | Jsr Corporation | パターン形成方法および高炭素含有樹脂組成物 |
| US8017310B2 (en) * | 2007-02-02 | 2011-09-13 | Asml Netherlands B.V. | Lithographic method |
| JP2008235578A (ja) * | 2007-03-20 | 2008-10-02 | Nichicon Corp | 導線のシールド構造およびシールド方法 |
| KR101541439B1 (ko) * | 2008-07-24 | 2015-08-03 | 닛산 가가쿠 고교 가부시키 가이샤 | 코팅 조성물 및 패턴 형성방법 |
| WO2010019887A1 (en) * | 2008-08-14 | 2010-02-18 | Brookhaven Science Associates | Structured pillar electrodes |
| TWI474378B (zh) * | 2009-06-26 | 2015-02-21 | 羅門哈斯電子材料有限公司 | 形成電子裝置的方法 |
| JP5652404B2 (ja) | 2009-11-30 | 2015-01-14 | Jsr株式会社 | 感放射線性組成物及びレジストパターン形成方法 |
| JP2011197150A (ja) * | 2010-03-17 | 2011-10-06 | Jsr Corp | 感放射線性組成物及びそれを用いたレジストパターン形成方法 |
| JP5542500B2 (ja) * | 2010-03-30 | 2014-07-09 | 東京応化工業株式会社 | レジストパターン形成方法およびレジスト組成物 |
| TW201229693A (en) * | 2010-10-01 | 2012-07-16 | Fujifilm Corp | Gap embedding composition, method of embedding gap and method of producing semiconductor device by using the composition |
| JP5820676B2 (ja) * | 2010-10-04 | 2015-11-24 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ | 下層組成物および下層を像形成する方法 |
| JP5571525B2 (ja) * | 2010-10-20 | 2014-08-13 | ローム株式会社 | 有機薄膜太陽電池およびその製造方法 |
| WO2012144504A1 (ja) * | 2011-04-19 | 2012-10-26 | Shima Hiroki | 細胞活性化装置 |
| WO2013104499A1 (en) * | 2012-01-13 | 2013-07-18 | Asml Netherlands B.V. | Self-assemblable polymer and methods for use in lithography |
| JP5802233B2 (ja) | 2013-03-27 | 2015-10-28 | 株式会社東芝 | パターン形成方法 |
| JP6097652B2 (ja) * | 2013-07-31 | 2017-03-15 | 富士フイルム株式会社 | パターン形成方法、パターン、並びに、これらを用いたエッチング方法、及び、電子デバイスの製造方法 |
| US9349604B2 (en) * | 2013-10-20 | 2016-05-24 | Tokyo Electron Limited | Use of topography to direct assembly of block copolymers in grapho-epitaxial applications |
| JP2016539361A (ja) * | 2013-11-08 | 2016-12-15 | 東京エレクトロン株式会社 | Ｅｕｖリソグラフィを加速するためのポスト処理メソッドを使用する方法 |
| JP5822986B2 (ja) * | 2014-06-16 | 2015-11-25 | ダウ コーニング コーポレーションＤｏｗ Ｃｏｒｎｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ | レジスト被覆膜形成用材料 |
| US9791779B2 (en) * | 2014-10-16 | 2017-10-17 | Tokyo Electron Limited | EUV resist etch durability improvement and pattern collapse mitigation |
| US9633847B2 (en) | 2015-04-10 | 2017-04-25 | Tokyo Electron Limited | Using sub-resolution openings to aid in image reversal, directed self-assembly, and selective deposition |
-
2016
- 2016-04-07 US US15/093,218 patent/US9633847B2/en active Active
- 2016-04-08 TW TW105111006A patent/TWI604510B/zh active
- 2016-04-08 JP JP2016078408A patent/JP6683342B2/ja active Active
- 2016-04-11 KR KR1020160044336A patent/KR102608648B1/ko active Active
-
2020
- 2020-01-17 JP JP2020005678A patent/JP7209429B2/ja active Active
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