KR102608648B1 - 이미지 반전, 유도 자기 조립, 및 선택적 퇴적에 도움을 주는 서브 해상도 개구 이용 - Google Patents

이미지 반전, 유도 자기 조립, 및 선택적 퇴적에 도움을 주는 서브 해상도 개구 이용 Download PDF

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KR102608648B1
KR102608648B1 KR1020160044336A KR20160044336A KR102608648B1 KR 102608648 B1 KR102608648 B1 KR 102608648B1 KR 1020160044336 A KR1020160044336 A KR 1020160044336A KR 20160044336 A KR20160044336 A KR 20160044336A KR 102608648 B1 KR102608648 B1 KR 102608648B1
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trench structure
layer
substrate
photoactive material
chemical template
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KR20160121454A (ko
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벤자민 엠 라쓰색
마크 에이치 서머벨
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도쿄엘렉트론가부시키가이샤
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    • H01L21/0275—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H01L21/0475—
    • H01L21/3065—
    • H01L21/31138—
    • H01L21/67069—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
KR1020160044336A 2015-04-10 2016-04-11 이미지 반전, 유도 자기 조립, 및 선택적 퇴적에 도움을 주는 서브 해상도 개구 이용 Active KR102608648B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562145683P 2015-04-10 2015-04-10
US62/145,683 2015-04-10

Publications (2)

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KR20160121454A KR20160121454A (ko) 2016-10-19
KR102608648B1 true KR102608648B1 (ko) 2023-11-30

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Country Status (4)

Country Link
US (1) US9633847B2 (https=)
JP (2) JP6683342B2 (https=)
KR (1) KR102608648B1 (https=)
TW (1) TWI604510B (https=)

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US9633847B2 (en) * 2015-04-10 2017-04-25 Tokyo Electron Limited Using sub-resolution openings to aid in image reversal, directed self-assembly, and selective deposition
US10338466B2 (en) * 2015-04-13 2019-07-02 Tokyo Electron Limited System and method for planarizing a substrate
US11306249B2 (en) 2018-01-30 2022-04-19 Tokyo Electron Limited Substrate processing method, substrate processing device and etching liquid
CN111584421B (zh) * 2019-02-15 2023-08-25 中芯国际集成电路制造(上海)有限公司 一种互连结构及其形成方法
US11335566B2 (en) * 2019-07-19 2022-05-17 Tokyo Electron Limited Method for planarization of spin-on and CVD-deposited organic films
US20210294148A1 (en) * 2020-03-17 2021-09-23 Tokyo Electron Limited Planarizing Organic Films
KR102889887B1 (ko) * 2020-12-02 2025-11-21 도쿄엘렉트론가부시키가이샤 패터닝된 기판 상에 형성된 개구부 내의 충전 재료를 함입하기 위한 방법

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US20110248315A1 (en) 2008-08-14 2011-10-13 Brookhaven Science Associates Structured pillar electrodes
US20130189627A1 (en) 2010-10-01 2013-07-25 Fujifilm Corporation Gap embedding composition, method of embedding gap and method of producing semiconductor device by using the composition

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JP2003316019A (ja) * 2002-04-24 2003-11-06 Toshiba Corp パターン形成方法および半導体装置の製造方法
US20110248315A1 (en) 2008-08-14 2011-10-13 Brookhaven Science Associates Structured pillar electrodes
US20130189627A1 (en) 2010-10-01 2013-07-25 Fujifilm Corporation Gap embedding composition, method of embedding gap and method of producing semiconductor device by using the composition

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Publication number Publication date
JP6683342B2 (ja) 2020-04-15
JP2016213444A (ja) 2016-12-15
US20160300711A1 (en) 2016-10-13
TW201719720A (zh) 2017-06-01
JP2020092274A (ja) 2020-06-11
TWI604510B (zh) 2017-11-01
KR20160121454A (ko) 2016-10-19
US9633847B2 (en) 2017-04-25
JP7209429B2 (ja) 2023-01-20

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