JP2016167093A - 表示装置 - Google Patents
表示装置 Download PDFInfo
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- JP2016167093A JP2016167093A JP2016102279A JP2016102279A JP2016167093A JP 2016167093 A JP2016167093 A JP 2016167093A JP 2016102279 A JP2016102279 A JP 2016102279A JP 2016102279 A JP2016102279 A JP 2016102279A JP 2016167093 A JP2016167093 A JP 2016167093A
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Abstract
Description
本発明に係る表示装置における好ましい実施形態について以下に説明する。なお、以下の好ましい実施形態は、適宜、互いに組み合わされてもよく、以下の2以上の好ましい実施形態を互いに組み合わせた実施形態もまた、好ましい実施形態の一つである。
図1〜13を参照して、実施形態1の液晶ディスプレイについて説明する。まず、図1〜3を参照して、本実施形態の液晶ディスプレイの全体の構造について説明する。図1は、実施形態1の液晶ディスプレイに含まれる液晶パネルの平面模式図である。図2は、図1のA−B線における断面模式図である。図3は、実施形態1の液晶ディスプレイに含まれる液晶パネルの平面模式図である。
まず、入力端子INaに入力される信号(スタートパルスSP1、SP2、又は、前々段(各シフトレジスタ内で考えると一段前)の単位回路の出力信号。以下、入力信号INaとも言う。)がローレベルからハイレベルに変化すると、ダイオード接続されたトランジスタTr2を介してノードnetAの電位もハイレベルに変化し、出力トランジスタTr1はオン状態になる。
本実施形態の液晶ディスプレイは、一般的な方法により製造することができるが、より詳細には、まず、アレイ基板10と対向基板50とを通常の方法により各々作製する。
まず、スクリーン印刷法、ディスペンサ描画法等の方法により、アレイ基板10及び対向基板50のいずれかに硬化前のシールの材料(本明細書ではシール材とも言う。)を塗布する。シール材は、閉じた環状に塗布される。また、シール材が塗布された基板、又は、塗布されてない基板上に液晶材料を滴下する。
まず、スクリーン印刷法、ディスペンサ描画法等の方法により、アレイ基板10及び対向基板50のいずれかにシール材を塗布する。シール材は、液晶注入口が形成される領域を除いて、環状に塗布される。
実施形態2の液晶ディスプレイは、ブートストラップ・コンデンサの構造が異なることを除いて、実施形態1の液晶ディスプレイと実質的に同じである。図14は、実施形態2の液晶ディスプレイにおけるブートストラップ・コンデンサの平面模式図である。図15は、図14のJ−K線における断面模式図である。
実施形態3の液晶ディスプレイは、シフトレジスタ中の素子のレイアウトが異なることを除いて、実施形態1の液晶ディスプレイと実質的に同じである。図16は、実施形態3の液晶ディスプレイの額縁領域における構成を示す平面模式図である。
実施形態4の液晶ディスプレイは、シフトレジスタ中の素子のレイアウトが異なることを除いて、実施形態1の液晶ディスプレイと実質的に同じである。図22は、実施形態4の液晶ディスプレイの額縁領域における構成を示す平面模式図である。図23は、図22のM−N線における断面模式図である。
実施形態5の液晶ディスプレイは、コンデンサ部分CAP(2)の平面構造が異なることを除いて、実施形態4の液晶ディスプレイと実質的に同じである。図24は、実施形態5の液晶ディスプレイの額縁領域における構成を示す平面模式図である。
実施形態6の液晶ディスプレイは、シフトレジスタ中の素子のレイアウトが異なることを除いて、実施形態1の液晶ディスプレイと実質的に同じである。図25は、実施形態6の液晶ディスプレイの額縁領域における構成を示す平面模式図である。図26は、図25のP−Q線における断面模式図である。
実施形態7の液晶ディスプレイは、シフトレジスタ中の素子のレイアウトが異なることを除いて、実施形態6の液晶ディスプレイと実質的に同じである。図27は、実施形態7の液晶ディスプレイの額縁領域における構成を示す平面模式図である。
以下にアクティブマトリクス型有機ELディスプレイに係る実施形態8を示す。
図20は、実施形態8のアクティブマトリクス型有機ELディスプレイに含まれる単位画素(画素又はサブ画素)の回路構成を示す回路図である。図20に示すように、この画素回路には、6つの画素用トランジスタTr11〜Tr16と、1つの有機EL素子161とが設けられている。トランジスタTr13は、上記実施形態(C)における第2の画素用トランジスタに相当し、トランジスタTr16は、上記実施形態(B)における画素用トランジスタと、上記実施形態(C)における第1の画素用トランジスタとに相当する。
2:表示部
3:画素
4:画素用TFT
5:ソースバスライン用の駆動回路(ソースドライバ)
6a、6b:ゲートバスライン用の駆動回路(ゲートドライバ)
7、107:表示領域
8:額縁領域
9:画素電極
10:アレイ基板
10a:エッジ
11:絶縁基板
12、S1〜Sm:ソースバスライン
13、113、G1〜Gn:ゲートバスライン
14:コモン転移用電極
16:共通幹配線
17:コモンバスライン
18、19:引き出し線
25:入力配線
26、27、28、29、30:端子
31、35:第1電極
31a、32a、35a、36a:開口部
31b、32b、35b、36b:切り欠き部
32、36:第2電極
33:第3電極
34:コンタクトホール
41:ゲート電極
42:ゲート絶縁膜
43:i層(半導体活性層)
44:n+層
45:ソース電極
46:ドレイン電極
47、48:絶縁膜
50:対向基板
51:絶縁基板
52:ブラックマトリクス(BM)
61:液晶層
62:シール
63:シール塗布領域
71:画素アレイ
72:表示制御回路
73a、73b:シフトレジスタ
74〜76:配線
77:制御素子領域
78:配線群
112:データバスライン
113D:ゲートバスライン用の駆動回路
115:初期化信号線
120:初期化電圧線
120W:初期化電圧線用幹配線
121:発光制御線
121D:発光制御線用の駆動回路
122:陽極側電源線
122W:陽極電源線用幹配線
123:陰極側電源線
161:有機EL素子
Pij:画素回路
SR1〜SRn:単位回路
INa、INb:入力端子
CKA、CKB:クロック端子
VSS:電源端子
OUT:出力端子
Tr1〜Tr4、Tr11〜Tr16:トランジスタ
CAP:ブートストラップ・コンデンサ
CAP(1)、CAP(2):コンデンサ部分
C:コンデンサ
Claims (9)
- 第1基板と、前記第1基板に対向する第2基板と、前記第1基板及び前記第2基板の間に設けられたシールとを備える表示装置であって、
前記表示装置は、表示領域と、前記表示領域の周囲の額縁領域とを含み、
前記シールは、前記額縁領域に前記表示領域を取り囲むように設けられ、
前記第1基板は、絶縁基板と、前記絶縁基板上にモノリシック形成されたシフトレジスタと、複数のバスラインと、前記複数のバスラインと直交する方向に延在し、前記シフトレジスタに信号を供給する配線とを含み、
前記シフトレジスタは、前記額縁領域に配置され、かつ、多段接続された複数の単位回路を含み、
前記複数の単位回路は各々、クロック信号が入力されるクロック端子と、対応するバスラインに接続され、出力信号が出力される出力端子と、ソース及びドレインの一方が前記クロック端子に接続され、前記ソース及び前記ドレインの他方が前記出力端子に接続されたトランジスタと、第1端子が前記トランジスタのゲートに接続され、第2端子が前記出力端子に接続されたコンデンサとを含み、
前記コンデンサは、前記配線と前記表示領域との間の領域内に配置され、かつ、第1電極と、前記第1電極上の絶縁層と、前記絶縁層上の第2電極とを含み、
前記複数の単位回路のうちの少なくとも一つにおいて、前記第1電極には、第1切り欠き部及び/又は第1開口部が設けられ、前記第2電極には、前記第1切り欠き部及び/又は前記第1開口部に対向する第2切り欠き部及び/又は第2開口部が設けられる表示装置。 - 前記シールは、光硬化性を有する材料の硬化物を含む請求項1記載の表示装置。
- 前記材料は、熱硬化性を更に有する請求項2記載の表示装置。
- 前記コンデンサは、前記第2電極上の第2絶縁層と、前記第2絶縁層上の透明電極とを更に含み、
前記透明電極は、前記第1電極に接続される請求項1〜3のいずれかに記載の表示装置。 - 前記第1基板は、表示領域内に設けられた複数の画素回路を含み、
前記複数の画素回路は各々、画素用トランジスタと、前記画素用トランジスタに接続された画素電極とを含み、
前記複数のバスラインは各々、対応する複数の画素用トランジスタのゲートに接続される請求項1〜4のいずれかに記載の表示装置。 - 前記第1基板は、表示領域内に設けられた複数の画素回路を含み、
前記複数の画素回路は各々、画素用トランジスタと、前記画素用トランジスタに接続されたエレクトロルミネッセンス素子とを含み、
前記複数のバスラインは各々、対応する複数の画素用トランジスタのゲートに接続される請求項1〜4のいずれかに記載の表示装置。 - 前記複数のバスラインは、第1の複数のバスラインであり、
前記第1基板は、表示領域内に設けられた複数の画素回路と、複数のデータバスラインとを含み、
前記複数の画素回路は各々、第1の画素用トランジスタと、対応するデータバスラインに接続された第2の画素用トランジスタと、前記第1の画素用トランジスタに接続されたエレクトロルミネッセンス素子とを含み、
前記第1の複数のバスラインは各々、対応する複数の第2の画素用トランジスタのゲートに接続される請求項1〜4のいずれかに記載の表示装置。 - 前記トランジスタは、酸化物半導体を含む請求項1〜7のいずれかに記載の表示装置。
- 前記酸化物半導体は、インジウム(In)、ガリウム(Ga)、亜鉛(Zn)及び酸素(O)を含む請求項8記載の表示装置。
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TW201344315A (zh) | 2013-11-01 |
US20150070616A1 (en) | 2015-03-12 |
KR101697841B1 (ko) | 2017-01-18 |
EP2840566B1 (en) | 2017-06-14 |
SG11201406630YA (en) | 2015-01-29 |
EP2840566A4 (en) | 2015-04-15 |
JPWO2013157285A1 (ja) | 2015-12-21 |
US9223161B2 (en) | 2015-12-29 |
JP5973556B2 (ja) | 2016-08-23 |
EP2840566A1 (en) | 2015-02-25 |
MY167330A (en) | 2018-08-16 |
JP6235652B2 (ja) | 2017-11-22 |
WO2013157285A1 (ja) | 2013-10-24 |
CN104221072A (zh) | 2014-12-17 |
KR20140133924A (ko) | 2014-11-20 |
TWI544260B (zh) | 2016-08-01 |
CN104221072B (zh) | 2016-09-07 |
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