JP2016027590A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2016027590A JP2016027590A JP2014175043A JP2014175043A JP2016027590A JP 2016027590 A JP2016027590 A JP 2016027590A JP 2014175043 A JP2014175043 A JP 2014175043A JP 2014175043 A JP2014175043 A JP 2014175043A JP 2016027590 A JP2016027590 A JP 2016027590A
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- film
- conductive film
- transistor
- insulating film
- conductive
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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Abstract
【解決手段】絶縁表面上の第1の導電膜および第2の導電膜と、絶縁表面上、第1の導電膜上および第2の導電膜上の第1の絶縁膜と、第1の絶縁膜を介して第1の導電膜と重なる半導体膜と、半導体膜と接する第3の導電膜と、半導体膜と接し、第1の絶縁膜を介して第2の導電膜と重なる第4の導電膜と、半導体膜上、第3の導電膜上および第4の導電膜上にあり、厚い領域および薄い領域を有する第2の絶縁膜と、第2の絶縁膜を介して半導体膜と重なる第5の導電膜と、第2の絶縁膜の薄い領域で第4の導電膜と重なる第6の導電膜と、を有する半導体装置である。
【選択図】図1
Description
以下では、本発明の一態様に係る容量素子について、図1を用いて説明する。
以下では、本発明の一態様に係る表示装置について、図2乃至図14を用いて説明する。
以下では、高精細のEL表示装置を構成する画素の一例を示す。
図22は、本発明の一態様に係る表示装置に適用可能な走査線駆動回路の一例である。また、該走査線駆動回路の構成要素であるシフトレジスタ(G_SRとも表記する。)、配線G2に接続するインバータ(G2_INVとも表記する。)の端子、および配線G3に接続するインバータ(G3_INVとも表記する。)の端子の位置を、図23(A)、図23(B)および図23(C)にそれぞれ模式的に示す。
以下では、本発明の一態様に用いることのできる半導体膜のうち、酸化物半導体膜について説明する。
以下では、本発明の一態様の半導体装置を適用した表示モジュールについて、図18を用いて説明を行う。
以下では、本発明の一態様の表示装置が適用された電子機器や照明装置の例について、図面を参照して説明する。
104 導電膜
112 絶縁膜
114 導電膜
116 導電膜
118 絶縁膜
700 基板
704a 導電膜
704b 導電膜
706 半導体膜
707 半導体膜
712a 絶縁膜
712b 絶縁膜
714a 導電膜
714b 導電膜
716a 導電膜
716b 導電膜
718a 絶縁膜
718b 絶縁膜
718c 絶縁膜
719 発光素子
720 絶縁膜
721 絶縁膜
731 端子
732 FPC
733a 配線
734 シール材
735 駆動回路
736 駆動回路
737 画素
741 トランジスタ
742 容量素子
743 スイッチ素子
744 信号線
750 基板
751 トランジスタ
752 容量素子
753 液晶素子
754 走査線
755 信号線
781 導電膜
782 発光層
783 導電膜
784 隔壁
791 導電膜
792 絶縁膜
793 液晶層
794 絶縁膜
795 スペーサ
796 導電膜
797 基板
900 基板
904a 導電膜
904b 導電膜
904c 導電膜
904d 導電膜
904e 導電膜
904f 導電膜
906 半導体膜
906a 半導体膜
906b 半導体膜
906c 半導体膜
906d 半導体膜
908 絶縁膜
912a 絶縁膜
912b 絶縁膜
914a 導電膜
914b 導電膜
914c 導電膜
914d 導電膜
916a 導電膜
916b 導電膜
916c 導電膜
916d 導電膜
916e 導電膜
916f 導電膜
916g 導電膜
918a 絶縁膜
918b 絶縁膜
918c 絶縁膜
919 発光素子
926a 導電膜
926b 導電膜
926c 導電膜
928 絶縁膜
928a 開口部
928b 開口部
928c 開口部
932 透明膜
934 導電膜
936 絶縁膜
938 開口部
938a 開口部
938b 開口部
938c 開口部
938d 開口部
938e 開口部
938f 開口部
938g 開口部
940 スペーサ
948a 開口部
948b 開口部
948c 開口部
958 開口部
968 開口部
971 トランジスタ
972 トランジスタ
973 トランジスタ
974 トランジスタ
975 トランジスタ
976 容量素子
7100 携帯表示装置
7101 筐体
7102 表示部
7103 操作ボタン
7104 送受信装置
7201 台部
7203 操作スイッチ
7210 照明装置
7212 発光部
7220 照明装置
7222 発光部
7300 表示装置
7301 筐体
7302 表示部
7303 操作ボタン
7304 部材
7305 制御部
7400 携帯情報端末
7401 筐体
7402 表示部
7403 操作ボタン
7404 外部接続ポート
7405 スピーカ
7406 マイク
8000 表示モジュール
8001 上部カバー
8002 下部カバー
8003 FPC
8004 タッチパネル
8005 FPC
8006 表示パネル
8007 バックライトユニット
8008 光源
8009 フレーム
8010 プリント基板
8011 バッテリー
Claims (6)
- 絶縁表面上の第1の導電膜および第2の導電膜と、
前記絶縁表面上、前記第1の導電膜上および前記第2の導電膜上の第1の絶縁膜と、
前記第1の絶縁膜を介して前記第1の導電膜と重なる半導体膜と、
前記半導体膜と接する第3の導電膜と、
前記半導体膜と接し、前記第1の絶縁膜を介して前記第2の導電膜と重なる第4の導電膜と、
前記半導体膜上、前記第3の導電膜上および前記第4の導電膜上にあり、厚い領域および薄い領域を有する第2の絶縁膜と、
前記第2の絶縁膜を介して前記半導体膜と重なる第5の導電膜と、
前記第2の絶縁膜の薄い領域で前記第4の導電膜と重なる第6の導電膜と、を有することを特徴とする半導体装置。 - 絶縁表面上の第1の導電膜および第2の導電膜と、
前記絶縁表面上、前記第1の導電膜上および前記第2の導電膜上にあり、厚い領域と薄い領域を有する第1の絶縁膜と、
前記第1の絶縁膜を介して前記第1の導電膜と重なる半導体膜と、
前記半導体膜と接する第3の導電膜と、
前記半導体膜と接し、前記第1の絶縁膜の薄い領域で前記第2の導電膜と重なる第4の導電膜と、
前記半導体膜上、前記第3の導電膜上および前記第4の導電膜上の第2の絶縁膜と、
前記第2の絶縁膜を介して前記半導体膜と重なる第5の導電膜と、
前記第2の絶縁膜を介して前記第4の導電膜と重なる第6の導電膜と、を有することを特徴とする半導体装置。 - 絶縁表面上の第1の導電膜および第2の導電膜と、
前記絶縁表面上、前記第1の導電膜上および前記第2の導電膜上にあり、厚い領域と薄い領域を有する第1の絶縁膜と、
前記第1の絶縁膜を介して前記第1の導電膜と重なる半導体膜と、
前記半導体膜と接する第3の導電膜と、
前記半導体膜と接し、前記第1の絶縁膜の薄い領域で前記第2の導電膜と重なる第4の導電膜と、
前記半導体膜上、前記第3の導電膜上および前記第4の導電膜上にあり、厚い領域および薄い領域を有する第2の絶縁膜と、
前記第2の絶縁膜を介して前記半導体膜と重なる第5の導電膜と、
前記第2の絶縁膜の薄い領域で前記第4の導電膜と重なる第6の導電膜と、を有することを特徴とする半導体装置。 - 請求項1乃至請求項3のいずれか一において、
前記半導体膜が酸化物半導体膜であることを特徴とする半導体装置。 - 請求項1乃至請求項3のいずれか一において、
前記半導体膜が多結晶シリコン膜であることを特徴とする半導体装置。 - 前記第2の絶縁膜上、前記第5の導電膜上および前記第6の導電膜上の第3の絶縁膜と、
前記第3の絶縁膜上にあり、前記第4の導電膜と電気的に接続される表示素子と、を有することを特徴とする請求項1乃至請求項5のいずれか一に記載の半導体装置。
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Also Published As
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TWI669821B (zh) | 2019-08-21 |
KR102254796B1 (ko) | 2021-05-24 |
JP6418849B2 (ja) | 2018-11-07 |
KR102419712B1 (ko) | 2022-07-13 |
JP6637568B2 (ja) | 2020-01-29 |
JP2021005090A (ja) | 2021-01-14 |
KR20200060321A (ko) | 2020-05-29 |
KR102639847B1 (ko) | 2024-02-27 |
JP6756066B1 (ja) | 2020-09-16 |
JP2023075091A (ja) | 2023-05-30 |
DE102014217529A1 (de) | 2015-03-05 |
JP7024024B2 (ja) | 2022-02-22 |
JP2022081483A (ja) | 2022-05-31 |
JP7531072B1 (ja) | 2024-08-08 |
KR20240024141A (ko) | 2024-02-23 |
JP2019054250A (ja) | 2019-04-04 |
JP6730506B2 (ja) | 2020-07-29 |
JP7228724B2 (ja) | 2023-02-24 |
JP2020184086A (ja) | 2020-11-12 |
US10008513B2 (en) | 2018-06-26 |
JP2024037823A (ja) | 2024-03-19 |
KR20220101055A (ko) | 2022-07-19 |
DE102014217529B4 (de) | 2024-07-25 |
KR20150028214A (ko) | 2015-03-13 |
DE102014020047B3 (de) | 2021-09-16 |
JP2020074407A (ja) | 2020-05-14 |
JP2024125356A (ja) | 2024-09-18 |
US20150060845A1 (en) | 2015-03-05 |
TW201515229A (zh) | 2015-04-16 |
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