JP2016001712A - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP2016001712A
JP2016001712A JP2014235720A JP2014235720A JP2016001712A JP 2016001712 A JP2016001712 A JP 2016001712A JP 2014235720 A JP2014235720 A JP 2014235720A JP 2014235720 A JP2014235720 A JP 2014235720A JP 2016001712 A JP2016001712 A JP 2016001712A
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Japan
Prior art keywords
film
oxide semiconductor
semiconductor film
insulating film
oxide
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JP2014235720A
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Japanese (ja)
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JP2016001712A5 (enExample
Inventor
将志 太田
Masashi Ota
将志 太田
典隆 石原
Noritaka Ishihara
典隆 石原
基 中島
Motoi Nakajima
基 中島
陽一 黒澤
Yoichi Kurosawa
陽一 黒澤
山崎　舜平
Shunpei Yamazaki
舜平 山崎
泰靖 保坂
Hiroyasu Hosaka
泰靖 保坂
俊光 生内
Toshimitsu Ubunai
俊光 生内
純一 肥塚
Junichi Hizuka
純一 肥塚
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2014235720A priority Critical patent/JP2016001712A/ja
Publication of JP2016001712A publication Critical patent/JP2016001712A/ja
Publication of JP2016001712A5 publication Critical patent/JP2016001712A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/42—Bombardment with radiation
    • H01L21/423—Bombardment with radiation with high-energy radiation
    • H01L21/425—Bombardment with radiation with high-energy radiation producing ion implantation
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/477—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2014235720A 2013-11-29 2014-11-20 半導体装置の作製方法 Withdrawn JP2016001712A (ja)

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JP2014235720A JP2016001712A (ja) 2013-11-29 2014-11-20 半導体装置の作製方法

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JP2013248320 2013-11-29
JP2013248320 2013-11-29
JP2014033904 2014-02-25
JP2014033904 2014-02-25
JP2014107582 2014-05-23
JP2014107582 2014-05-23
JP2014235720A JP2016001712A (ja) 2013-11-29 2014-11-20 半導体装置の作製方法

Related Child Applications (1)

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JP2019112029A Division JP2019192929A (ja) 2013-11-29 2019-06-17 半導体装置

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JP2016001712A true JP2016001712A (ja) 2016-01-07
JP2016001712A5 JP2016001712A5 (enExample) 2017-12-28

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JP2014235720A Withdrawn JP2016001712A (ja) 2013-11-29 2014-11-20 半導体装置の作製方法
JP2019112029A Withdrawn JP2019192929A (ja) 2013-11-29 2019-06-17 半導体装置
JP2021095826A Withdrawn JP2021168388A (ja) 2013-11-29 2021-06-08 半導体装置
JP2023069113A Active JP7631405B2 (ja) 2013-11-29 2023-04-20 半導体装置の作製方法
JP2025017632A Pending JP2025065310A (ja) 2013-11-29 2025-02-05 半導体装置の作製方法

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JP2021095826A Withdrawn JP2021168388A (ja) 2013-11-29 2021-06-08 半導体装置
JP2023069113A Active JP7631405B2 (ja) 2013-11-29 2023-04-20 半導体装置の作製方法
JP2025017632A Pending JP2025065310A (ja) 2013-11-29 2025-02-05 半導体装置の作製方法

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US (5) US9437428B2 (enExample)
JP (5) JP2016001712A (enExample)
KR (1) KR102354213B1 (enExample)
TW (1) TWI654687B (enExample)
WO (1) WO2015079377A1 (enExample)

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JP2016027597A (ja) * 2013-12-06 2016-02-18 株式会社半導体エネルギー研究所 半導体装置
JP6506545B2 (ja) 2013-12-27 2019-04-24 株式会社半導体エネルギー研究所 半導体装置
JP2015188062A (ja) 2014-02-07 2015-10-29 株式会社半導体エネルギー研究所 半導体装置
KR101561924B1 (ko) * 2014-06-12 2015-10-22 연세대학교 산학협력단 산화물 박막 후처리 방법, 및 그를 이용한 반도체 소자 제조 방법
US9766517B2 (en) 2014-09-05 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Display device and display module
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US9852926B2 (en) 2015-10-20 2017-12-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for semiconductor device
KR102570314B1 (ko) * 2016-06-08 2023-08-24 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
KR102573853B1 (ko) 2016-09-20 2023-09-01 삼성디스플레이 주식회사 발광 표시 장치
US10845308B2 (en) * 2016-12-22 2020-11-24 Quantum-Si Incorporated Integrated photodetector with direct binning pixel
JP6990997B2 (ja) * 2017-06-06 2022-01-12 株式会社日立製作所 Ｍｅｍｓデバイス
WO2019246328A1 (en) 2018-06-22 2019-12-26 Quantum-Si Incorporated Integrated photodetector with charge storage bin of varied detection time
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CN111725072B (zh) * 2020-06-30 2022-12-30 吉林大学 一种电子浓度稳定的高质量氧化镓薄膜及其制备方法

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