JP2016001301A - 表示装置、表示モジュール、及び電子機器 - Google Patents
表示装置、表示モジュール、及び電子機器 Download PDFInfo
- Publication number
- JP2016001301A JP2016001301A JP2015080608A JP2015080608A JP2016001301A JP 2016001301 A JP2016001301 A JP 2016001301A JP 2015080608 A JP2015080608 A JP 2015080608A JP 2015080608 A JP2015080608 A JP 2015080608A JP 2016001301 A JP2016001301 A JP 2016001301A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- transistor
- film
- oxide semiconductor
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 100
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 81
- 239000003990 capacitor Substances 0.000 claims abstract description 65
- 239000004065 semiconductor Substances 0.000 claims description 275
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 45
- 239000001301 oxygen Substances 0.000 claims description 45
- 229910052760 oxygen Inorganic materials 0.000 claims description 45
- 239000001257 hydrogen Substances 0.000 claims description 42
- 229910052739 hydrogen Inorganic materials 0.000 claims description 42
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 17
- 230000008859 change Effects 0.000 abstract description 21
- 230000005684 electric field Effects 0.000 abstract description 18
- 230000009467 reduction Effects 0.000 abstract description 5
- 230000002349 favourable effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 449
- 230000006870 function Effects 0.000 description 66
- 239000000523 sample Substances 0.000 description 59
- 239000013078 crystal Substances 0.000 description 47
- 125000004429 atom Chemical group 0.000 description 35
- 238000000034 method Methods 0.000 description 31
- 239000012535 impurity Substances 0.000 description 26
- 239000000463 material Substances 0.000 description 22
- 238000010586 diagram Methods 0.000 description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 229910052782 aluminium Inorganic materials 0.000 description 16
- 229910052581 Si3N4 Inorganic materials 0.000 description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 14
- 239000011701 zinc Substances 0.000 description 13
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 11
- 150000002431 hydrogen Chemical class 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 11
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 9
- 230000007547 defect Effects 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 229910052721 tungsten Inorganic materials 0.000 description 9
- 239000010937 tungsten Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000001514 detection method Methods 0.000 description 8
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 229910001868 water Inorganic materials 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 7
- 230000000903 blocking effect Effects 0.000 description 7
- 239000000969 carrier Substances 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 238000002003 electron diffraction Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910052735 hafnium Inorganic materials 0.000 description 6
- 229910000449 hafnium oxide Inorganic materials 0.000 description 6
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 6
- -1 polyethylene terephthalate Polymers 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 5
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- 229910001195 gallium oxide Inorganic materials 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 229910052727 yttrium Inorganic materials 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- 229910052783 alkali metal Inorganic materials 0.000 description 4
- 150000001340 alkali metals Chemical class 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 238000005477 sputtering target Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 3
- 150000001342 alkaline earth metals Chemical class 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 125000005843 halogen group Chemical group 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- 239000002096 quantum dot Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000012916 structural analysis Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910007541 Zn O Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 239000004760 aramid Substances 0.000 description 2
- 229920003235 aromatic polyamide Polymers 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052756 noble gas Inorganic materials 0.000 description 2
- 150000002835 noble gases Chemical class 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 244000025254 Cannabis sativa Species 0.000 description 1
- 235000012766 Cannabis sativa ssp. sativa var. sativa Nutrition 0.000 description 1
- 235000012765 Cannabis sativa ssp. sativa var. spontanea Nutrition 0.000 description 1
- 229920000298 Cellophane Polymers 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- 239000005264 High molar mass liquid crystal Substances 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229920000297 Rayon Polymers 0.000 description 1
- 239000004990 Smectic liquid crystal Substances 0.000 description 1
- 239000004974 Thermotropic liquid crystal Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 235000009120 camo Nutrition 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910052800 carbon group element Inorganic materials 0.000 description 1
- 235000005607 chanvre indien Nutrition 0.000 description 1
- 230000003098 cholesteric effect Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 1
- 239000002657 fibrous material Substances 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000011487 hemp Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 230000033001 locomotion Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 239000002964 rayon Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 239000012209 synthetic fiber Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
- G09G3/3655—Details of drivers for counter electrodes, e.g. common electrodes for pixel capacitors or supplementary storage capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0416—Control or interface arrangements specially adapted for digitisers
- G06F3/0418—Control or interface arrangements specially adapted for digitisers for error correction or compensation, e.g. based on parallax, calibration or alignment
- G06F3/04184—Synchronisation with the driving of the display or the backlighting unit to avoid interferences generated internally
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Human Computer Interaction (AREA)
- Liquid Crystal (AREA)
- Geometry (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Ceramic Engineering (AREA)
- Liquid Crystal Display Device Control (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
【解決手段】画素電極13と対向電極33との間に液晶層20を設ける表示装置の構成において、対向電極33側に設けられる、タッチセンサ42が有する容量素子の電極37とコモン電極33とを一体化し、パルス信号を与える。素子基板10側では、画素電極13との間で容量を形成する容量線15において、与える信号を該パルス信号に連動させることで、液晶層20に加わる電界の変動をキャンセルするように制御する構成とする。該構成とすることで、パルス信号によって液晶層20に与える電界が変化しても、電界の変化を打ち消すことができるタッチセンサ機能付きの表示装置とすることができる。
【選択図】図1
Description
本実施の形態では、表示装置の構成例、動作の一例について説明する。
図1(A)は、本発明の一態様である表示装置の断面模式図である。表示装置は、液晶パネル41と、タッチセンサ42とに大別できる。
本実施の形態では、実施の形態1で説明した表示装置の変形例について説明する。
図2には、図1(A)で説明した断面模式図の変形例を示す。
また別の構成として、図4には、図1(A)で説明した断面模式図の変形例を示す。
次いで、図1(A)で図示したトランジスタ11を含む液晶パネル41の画素回路と、図1(A)で図示したトランジスタ31を含むタッチセンサ42の回路構成とを併せた回路の一例、及び動作の一例について説明する。
本実施の形態では、実施の形態1、2で説明した表示装置の断面図の詳細について説明する。
図10に本発明の一態様の表示装置の断面模式図を示す。図10に示す表示装置は、一対の基板間にタッチセンサ及び液晶素子を有するため、薄型化を図ることができる。
図11(A)乃至図11(C)に、トランジスタ202r及び容量素子206rの上面模式図及び断面模式図を示す。図11(A)はトランジスタ202r及び容量素子206rの上面模式図であり、図11(B)は、図11(A)の一点鎖線A−B間の断面模式図、図11(C)は、図11(A)の一点鎖線C−D間の断面模式図である。なお、図11(A)では、明瞭化のため、基板200a、絶縁層209a、絶縁層235、絶縁層210aなどを省略している。
トランジスタ202rの変形例を図12を用いて説明する。図12に示すトランジスタは、デュアルゲート構造であることを特徴とする。
図13に、タッチセンサに含まれるトランジスタ202t及び電極238の断面模式図を示す。絶縁層209b上にトランジスタ202tが形成される。絶縁層209bは、絶縁層209aの材料を適宜用いて形成される。また、絶縁層209bは基板200b上に形成される。
<酸化物半導体膜の構造>
本実施の形態では、本発明の一態様の表示装置を適用した表示モジュールについて、説明する。また、本発明の一態様の表示モジュールが適用された電子機器の構成例について説明する。
M1 トランジスタ
M2 トランジスタ
M3 トランジスタ
M4 トランジスタ
10 基板
11 トランジスタ
12 容量素子
13 電極
14 導電層
15 導電層
16 絶縁層
17 半導体層
18 導電層
19 導電層
20 液晶層
21 導電層
22 導電層
23 電極
24 カラーフィルタ
30 基板
31 トランジスタ
32 容量素子
33 電極
34 導電層
35 絶縁層
36 半導体層
37 電極
38 導電層
39 導電層
41 液晶パネル
42 タッチセンサ
43 電極
44 カラーフィルタ
200a 基板
200b 基板
201g 液晶素子
201r 液晶素子
202g トランジスタ
202r トランジスタ
202t トランジスタ
204a トランジスタ
204b トランジスタ
206g 容量素子
206r 容量素子
206t 容量素子
208g 電極
208r 電極
209a 絶縁層
210a 絶縁層
210b 絶縁層
211 絶縁層
212a 絶縁層
212b 絶縁層
214 電極
216 スペーサ
220a 接続電極
220b 接続電極
222a 異方性導電膜
222b 異方性導電膜
224a FPC
224b FPC
226a 絶縁層
226b 絶縁層
228 液晶層
233 導電層
234 導電層
235 絶縁層
237 酸化物半導体層
238 電極
239 導電層
240 導電層
242 導電層
244 開口部
248 酸化物半導体層
249 酸化物半導体層
250a 端子部
250b 端子部
250d 駆動回路部
250p 画素部
308b 酸化物導電体層
1400 携帯情報端末
1401 筐体
1402 表示部
1403 操作ボタン
1410 携帯電話機
1411 筐体
1412 表示部
1413 操作ボタン
1414 スピーカー
1415 マイク
1420 音楽再生装置
1421 筐体
1422 表示部
1423 操作ボタン
1424 アンテナ
8000 表示モジュール
8001 上部カバー
8002 下部カバー
8005A FPC
8006 表示装置
8007 バックライトユニット
8008 光源
8009 フレーム
8010 プリント基板
8011 バッテリー
Claims (7)
- 第1の基板と、第2の基板と、液晶層と、を有する表示装置であって、
第1のトランジスタと、第1の容量素子と、第1の配線と、第1の電極と、第2のトランジスタと、第2の電極と、第2の容量素子と、第3の電極と、を有し、
前記液晶層は、前記第1の電極と、前記第3の電極との間に設けられ、
前記第1のトランジスタと、前記第1の容量素子と、前記第1の配線と、前記第1の電極とは、前記第1の基板に設けられ、
前記第1のトランジスタは、前記第1の電極に電気的に接続され、
前記第1の電極は、前記液晶層の画素電極としての機能を有し、
前記第1の容量素子の一方の電極は、前記第1の電極に電気的に接続され、
前記第1の容量素子の他方の電極は、前記第1の配線に電気的に接続され、
前記第1の配線は、第1の信号が与えられる機能を有し、
前記第2のトランジスタと、前記第2の電極と、前記第2の容量素子と、前記第3の電極とは、前記第2の基板に設けられ、
前記第2のトランジスタのソース又はドレインの一方は、前記第2の電極に電気的に接続され、
前記第2の電極は、前記第2の容量素子の一方の電極としての機能を有し、
前記第3の電極は、前記第2の容量素子の他方の電極としての機能を有し、
前記第3の電極は、前記液晶層の対向電極としての機能を有し、
前記第3の電極は、第2の信号が与えられる機能を有し、
前記第2の信号は、前記第1の信号と同じ周期で変動する信号である、ことを特徴とする表示装置。 - 請求項1において、
前記第2の基板は、第3のトランジスタと、第4のトランジスタと、を有し、
前記第3のトランジスタのゲートは、前記第2の電極に電気的に接続され、
前記第2のトランジスタのソース又はドレインの他方は、第2の配線に電気的に接続され、
前記第2の配線は、定電位が与えられる機能を有し、
前記第3のトランジスタのソース又はドレインの一方は、第4のトランジスタのソース又はドレインの一方に電気的に接続され、
前記第4のトランジスタのソース又はドレインの他方は、第3の配線に電気的に接続され、
前記第3の配線は、前記第2の電極の電位に従って電位が変化する機能を有する、ことを特徴とする表示装置。 - 請求項1又は2のいずれか一において、
前記第2のトランジスタは、半導体層が酸化物半導体を有し、
前記第3のトランジスタは、半導体層が酸化物半導体を有することを特徴とする表示装置。 - 請求項1乃至3のいずれか一において、
前記第2の電極は、前記第2のトランジスタが有する半導体層と、前記第3のトランジスタが有する半導体層と、同じ層に設けられる電極である、ことを特徴とする表示装置。 - 請求項1乃至4のいずれか一において、
前記第1のトランジスタは、第1の半導体層を有し、
前記第1の半導体層は、酸化物半導体を有し、
前記第1の半導体層は、第1の金属元素を有し、
前記第1の容量素子の他方の電極は、前記第1の金属元素と、酸素とを有し、
前記第1の半導体層は、第1の水素濃度である領域を有し、
前記第1の容量素子の他方の電極は、第2の水素濃度である領域を有し、
前記第1の水素濃度と、前記第2の水素濃度は、互いに異なる、ことを特徴とする表示装置。 - 請求項1乃至5のいずれか一に記載の前記表示装置と、
前記表示装置に電気的に接続されたプリント基板と、
を有することを特徴とする表示モジュール。 - 請求項6に記載の表示モジュールと、
操作ボタンと、
を有することを特徴とする電子機器。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015080608A JP6613044B2 (ja) | 2014-04-22 | 2015-04-10 | 表示装置、表示モジュール、及び電子機器 |
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014088223 | 2014-04-22 | ||
JP2014088200 | 2014-04-22 | ||
JP2014088223 | 2014-04-22 | ||
JP2014088200 | 2014-04-22 | ||
JP2014106476 | 2014-05-22 | ||
JP2014106476 | 2014-05-22 | ||
JP2015080608A JP6613044B2 (ja) | 2014-04-22 | 2015-04-10 | 表示装置、表示モジュール、及び電子機器 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019199546A Division JP2020030424A (ja) | 2014-04-22 | 2019-11-01 | 表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016001301A true JP2016001301A (ja) | 2016-01-07 |
JP6613044B2 JP6613044B2 (ja) | 2019-11-27 |
Family
ID=54321943
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015080608A Expired - Fee Related JP6613044B2 (ja) | 2014-04-22 | 2015-04-10 | 表示装置、表示モジュール、及び電子機器 |
JP2019199546A Withdrawn JP2020030424A (ja) | 2014-04-22 | 2019-11-01 | 表示装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019199546A Withdrawn JP2020030424A (ja) | 2014-04-22 | 2019-11-01 | 表示装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10345661B2 (ja) |
JP (2) | JP6613044B2 (ja) |
CN (1) | CN105005166B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014199406A (ja) * | 2012-09-13 | 2014-10-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2017138413A (ja) * | 2016-02-02 | 2017-08-10 | 株式会社ジャパンディスプレイ | 表示装置 |
JP2018006733A (ja) * | 2016-03-18 | 2018-01-11 | 株式会社半導体エネルギー研究所 | 半導体装置、該半導体装置を有する表示装置 |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20220145922A (ko) | 2012-12-25 | 2022-10-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP2015215606A (ja) | 2014-04-22 | 2015-12-03 | 株式会社半導体エネルギー研究所 | 液晶表示装置、およびそれを備える電子機器 |
JP2015228367A (ja) | 2014-05-02 | 2015-12-17 | 株式会社半導体エネルギー研究所 | 半導体装置、入出力装置、及び電子機器 |
JP6518133B2 (ja) | 2014-05-30 | 2019-05-22 | 株式会社半導体エネルギー研究所 | 入力装置 |
US9455281B2 (en) | 2014-06-19 | 2016-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Touch sensor, touch panel, touch panel module, and display device |
TWI723984B (zh) * | 2015-03-27 | 2021-04-11 | 日商半導體能源研究所股份有限公司 | 觸控面板 |
US10372274B2 (en) | 2015-04-13 | 2019-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and touch panel |
US10002970B2 (en) | 2015-04-30 | 2018-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method of the same, or display device including the same |
JP6807683B2 (ja) | 2015-09-11 | 2021-01-06 | 株式会社半導体エネルギー研究所 | 入出力パネル |
CN105242472B (zh) * | 2015-11-02 | 2018-08-21 | 深圳市华星光电技术有限公司 | 液晶面板及显示装置 |
CN105549789B (zh) * | 2016-01-20 | 2018-05-08 | 昆山龙腾光电有限公司 | 触控液晶显示装置 |
US10345977B2 (en) | 2016-10-14 | 2019-07-09 | Semiconductor Energy Laboratory Co., Ltd. | Input/output panel and semiconductor device having a current sensing circuit |
JP7050460B2 (ja) | 2016-11-22 | 2022-04-08 | 株式会社半導体エネルギー研究所 | 表示装置 |
US11353754B2 (en) | 2017-02-21 | 2022-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Display panel, display device, input/output device, and data processing device |
JP2019117342A (ja) * | 2017-12-27 | 2019-07-18 | シャープ株式会社 | アクティブマトリックス基板、アクティブマトリックス基板の製造方法および液晶表示装置 |
CN108376695B (zh) * | 2018-02-05 | 2021-01-08 | 惠科股份有限公司 | 一种显示面板和显示装置 |
CN108390656B (zh) * | 2018-02-27 | 2021-11-02 | 京东方科技集团股份有限公司 | 参量放大器及控制方法、液晶天线及显示面板、终端 |
US11435637B2 (en) | 2018-09-21 | 2022-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Display apparatus and electronic device |
KR20200097379A (ko) * | 2019-02-07 | 2020-08-19 | 삼성디스플레이 주식회사 | 표시패널 및 그 제조방법 |
US11355564B2 (en) * | 2019-12-04 | 2022-06-07 | Arolltech Co., Ltd. | AMOLED and micro-OLED for augmented reality and autostereoscopic 3D displays |
KR20210085604A (ko) * | 2019-12-31 | 2021-07-08 | 엘지디스플레이 주식회사 | 디스플레이 장치 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003196023A (ja) * | 2001-12-27 | 2003-07-11 | Sony Corp | 表示装置 |
JP2007048275A (ja) * | 2005-08-05 | 2007-02-22 | Samsung Electronics Co Ltd | センシング回路及びこれを有する表示装置 |
JP2009540374A (ja) * | 2006-06-09 | 2009-11-19 | アップル インコーポレイテッド | タッチ・スクリーン液晶ディスプレイ |
US20110193816A1 (en) * | 2008-11-14 | 2011-08-11 | Sharp Kabushiki Kaisha | Capacitance change detecting circuit |
JP2012022311A (ja) * | 2010-06-16 | 2012-02-02 | Semiconductor Energy Lab Co Ltd | 入出力装置の駆動方法及び入出力装置 |
JP2013224977A (ja) * | 2012-04-19 | 2013-10-31 | Toshiba Corp | 表示パネル及び表示装置 |
JP2014063141A (ja) * | 2012-08-03 | 2014-04-10 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
Family Cites Families (119)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
DE69635107D1 (de) | 1995-08-03 | 2005-09-29 | Koninkl Philips Electronics Nv | Halbleiteranordnung mit einem transparenten schaltungselement |
JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
JPH118352A (ja) * | 1997-06-14 | 1999-01-12 | Toshiba Microelectron Corp | 半導体集積回路装置及びその製造方法 |
JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
US7061014B2 (en) | 2001-11-05 | 2006-06-13 | Japan Science And Technology Agency | Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
US7049190B2 (en) | 2002-03-15 | 2006-05-23 | Sanyo Electric Co., Ltd. | Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device |
JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
KR100640997B1 (ko) | 2002-12-24 | 2006-11-02 | 엘지.필립스 엘시디 주식회사 | 액정 표시 장치 일체형 터치 패널 |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
JP3858864B2 (ja) * | 2003-08-29 | 2006-12-20 | セイコーエプソン株式会社 | 静電容量検出装置 |
EP1737044B1 (en) | 2004-03-12 | 2014-12-10 | Japan Science and Technology Agency | Amorphous oxide and thin film transistor |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
KR101133753B1 (ko) | 2004-07-26 | 2012-04-09 | 삼성전자주식회사 | 감지 소자를 내장한 액정 표시 장치 |
JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
AU2005302964B2 (en) | 2004-11-10 | 2010-11-04 | Canon Kabushiki Kaisha | Field effect transistor employing an amorphous oxide |
US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
CA2708335A1 (en) | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Amorphous oxide and field effect transistor |
US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
EP1810335B1 (en) | 2004-11-10 | 2020-05-27 | Canon Kabushiki Kaisha | Light-emitting device |
US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
TWI412138B (zh) | 2005-01-28 | 2013-10-11 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
TWI569441B (zh) | 2005-01-28 | 2017-02-01 | 半導體能源研究所股份有限公司 | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
WO2006105077A2 (en) | 2005-03-28 | 2006-10-05 | Massachusetts Institute Of Technology | Low voltage thin film transistor with high-k dielectric material |
US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
EP1998375A3 (en) | 2005-09-29 | 2012-01-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method |
JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
KR101112652B1 (ko) | 2005-11-15 | 2012-02-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액티브 매트릭스 디스플레이 장치 및 텔레비전 수신기 |
TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
CN101467119B (zh) | 2006-06-09 | 2013-02-13 | 苹果公司 | 触摸屏液晶显示器 |
CN104965621B (zh) | 2006-06-09 | 2018-06-12 | 苹果公司 | 触摸屏液晶显示器及其操作方法 |
US8243027B2 (en) | 2006-06-09 | 2012-08-14 | Apple Inc. | Touch screen liquid crystal display |
EP2027527A2 (en) | 2006-06-09 | 2009-02-25 | Apple, Inc. | Touch screen liquid crystal display |
JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
US20080167526A1 (en) | 2007-01-08 | 2008-07-10 | Crank Justin M | Non-Occlusive, Laterally-Constrained Injection Device |
US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
CN101663762B (zh) | 2007-04-25 | 2011-09-21 | 佳能株式会社 | 氧氮化物半导体 |
KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
US8202365B2 (en) | 2007-12-17 | 2012-06-19 | Fujifilm Corporation | Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film |
JP5014971B2 (ja) * | 2007-12-19 | 2012-08-29 | ソニーモバイルディスプレイ株式会社 | ディスプレイ装置 |
US8319750B2 (en) * | 2008-05-02 | 2012-11-27 | Sony Corporation | Sensing circuit, method of driving sensing circuit, display device, method of driving display device, and electronic apparatus |
JP5217618B2 (ja) * | 2008-05-16 | 2013-06-19 | セイコーエプソン株式会社 | 電子機器の接触位置特定方法 |
JP5372630B2 (ja) * | 2008-07-17 | 2013-12-18 | Nltテクノロジー株式会社 | 表示装置及び表示装置の駆動方法 |
JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
JP5191453B2 (ja) * | 2009-06-29 | 2013-05-08 | 株式会社ジャパンディスプレイウェスト | タッチセンサ、表示装置および電子機器 |
KR20120014808A (ko) | 2010-08-10 | 2012-02-20 | 엘지디스플레이 주식회사 | 터치 센서가 내장된 액정 표시 장치 및 그 구동 방법과 그 제조 방법 |
US8878176B2 (en) * | 2011-08-11 | 2014-11-04 | The Hong Kong University Of Science And Technology | Metal-oxide based thin-film transistors with fluorinated active layer |
WO2015132694A1 (en) | 2014-03-07 | 2015-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Touch sensor, touch panel, and manufacturing method of touch panel |
JP2015187852A (ja) | 2014-03-13 | 2015-10-29 | 株式会社半導体エネルギー研究所 | タッチパネル |
JP2015215606A (ja) | 2014-04-22 | 2015-12-03 | 株式会社半導体エネルギー研究所 | 液晶表示装置、およびそれを備える電子機器 |
-
2015
- 2015-04-10 JP JP2015080608A patent/JP6613044B2/ja not_active Expired - Fee Related
- 2015-04-13 US US14/684,661 patent/US10345661B2/en not_active Expired - Fee Related
- 2015-04-22 CN CN201510193511.4A patent/CN105005166B/zh not_active Expired - Fee Related
-
2019
- 2019-11-01 JP JP2019199546A patent/JP2020030424A/ja not_active Withdrawn
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003196023A (ja) * | 2001-12-27 | 2003-07-11 | Sony Corp | 表示装置 |
JP2007048275A (ja) * | 2005-08-05 | 2007-02-22 | Samsung Electronics Co Ltd | センシング回路及びこれを有する表示装置 |
JP2009540374A (ja) * | 2006-06-09 | 2009-11-19 | アップル インコーポレイテッド | タッチ・スクリーン液晶ディスプレイ |
US20110193816A1 (en) * | 2008-11-14 | 2011-08-11 | Sharp Kabushiki Kaisha | Capacitance change detecting circuit |
JP2012022311A (ja) * | 2010-06-16 | 2012-02-02 | Semiconductor Energy Lab Co Ltd | 入出力装置の駆動方法及び入出力装置 |
JP2013224977A (ja) * | 2012-04-19 | 2013-10-31 | Toshiba Corp | 表示パネル及び表示装置 |
JP2014063141A (ja) * | 2012-08-03 | 2014-04-10 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014199406A (ja) * | 2012-09-13 | 2014-10-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6110584B1 (ja) * | 2012-09-13 | 2017-04-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2017143252A (ja) * | 2012-09-13 | 2017-08-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9806099B2 (en) | 2012-09-13 | 2017-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10236305B2 (en) | 2012-09-13 | 2019-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10446584B2 (en) | 2012-09-13 | 2019-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10700099B2 (en) | 2012-09-13 | 2020-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2017138413A (ja) * | 2016-02-02 | 2017-08-10 | 株式会社ジャパンディスプレイ | 表示装置 |
US10871853B2 (en) | 2016-02-02 | 2020-12-22 | Japan Display Inc. | Display device |
JP2018006733A (ja) * | 2016-03-18 | 2018-01-11 | 株式会社半導体エネルギー研究所 | 半導体装置、該半導体装置を有する表示装置 |
Also Published As
Publication number | Publication date |
---|---|
CN105005166A (zh) | 2015-10-28 |
JP6613044B2 (ja) | 2019-11-27 |
US10345661B2 (en) | 2019-07-09 |
CN105005166B (zh) | 2020-02-28 |
US20150301422A1 (en) | 2015-10-22 |
JP2020030424A (ja) | 2020-02-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6613044B2 (ja) | 表示装置、表示モジュール、及び電子機器 | |
JP7297955B2 (ja) | 半導体装置 | |
JP6445214B1 (ja) | 半導体装置 | |
JP6713820B2 (ja) | タッチパネル | |
JP6608633B2 (ja) | 半導体装置 | |
KR102093060B1 (ko) | 표시 장치, 및 표시 장치를 포함하는 전자 장치 | |
KR102128979B1 (ko) | 반도체 장치 | |
KR102208600B1 (ko) | 표시 장치 및 전자 기기 | |
JP7458536B2 (ja) | 表示装置 | |
JP2017076788A (ja) | 半導体装置の作製方法 | |
JP2020194561A (ja) | 表示装置 | |
JP6521794B2 (ja) | 半導体装置、及び電子機器 | |
TW201640303A (zh) | 觸控面板 | |
JP2017076787A (ja) | 半導体装置の作製方法 | |
KR20210068139A (ko) | 표시 장치 | |
JP2017228752A (ja) | 半導体装置の作製方法 | |
JP2017195369A (ja) | 半導体装置または当該半導体装置を有する表示装置 | |
JP2017108065A (ja) | 半導体装置の作製方法および該半導体装置を有する表示装置の作製方法 | |
JP2017204641A (ja) | 半導体装置および当該半導体装置を有する表示装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180409 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20181212 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190129 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190314 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190806 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190925 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20191015 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20191101 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6613044 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |