JP6608633B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6608633B2 JP6608633B2 JP2015132287A JP2015132287A JP6608633B2 JP 6608633 B2 JP6608633 B2 JP 6608633B2 JP 2015132287 A JP2015132287 A JP 2015132287A JP 2015132287 A JP2015132287 A JP 2015132287A JP 6608633 B2 JP6608633 B2 JP 6608633B2
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- film
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- oxide semiconductor
- insulating film
- transistor
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Description
本実施の形態では、トランジスタを有する半導体装置、及び該半導体装置の作製方法の一例について、図1乃至図10を用いて説明する。
図1(A)(B)(C)に、トランジスタを有する半導体装置の一例を示す。なお、図1(A)(B)(C)に示すトランジスタは、トップゲート構造である。
基板102としては、様々な基板を用いることができ、特定のものに限定されることはない。基板の一例としては、半導体基板(例えば単結晶基板またはシリコン基板)、SOI基板、ガラス基板、石英基板、プラスチック基板、金属基板、ステンレス・スチル基板、ステンレス・スチル・ホイルを有する基板、タングステン基板、タングステン・ホイルを有する基板、可撓性基板、貼り合わせフィルム、繊維状の材料を含む紙、または基材フィルムなどがある。ガラス基板の一例としては、バリウムホウケイ酸ガラス、アルミノホウケイ酸ガラス、またはソーダライムガラスなどがある。可撓性基板、貼り合わせフィルム、基材フィルムなどの一例としては、以下のものがあげられる。例えば、ポリエチレンテレフタレート(PET)、ポリエチレンナフタレート(PEN)、ポリエーテルサルフォン(PES)に代表されるプラスチックがある。または、一例としては、アクリル等の合成樹脂などがある。または、一例としては、ポリプロピレン、ポリエステル、ポリフッ化ビニル、ポリ塩化ビニルなどがある。または、一例としては、ポリアミド、ポリイミド、アラミド、エポキシ、無機蒸着フィルム、または紙類などがある。特に、半導体基板、単結晶基板、またはSOI基板などを用いてトランジスタを製造することによって、特性、サイズ、または形状などのばらつきが少なく、電流能力が高く、サイズの小さいトランジスタを製造することができる。このようなトランジスタによって回路を構成すると、回路の低消費電力化、または回路の高集積化を図ることができる。
絶縁膜108としては、スパッタリング法、CVD法、蒸着法、パルスレーザー堆積(PLD)法、印刷法、塗布法等を適宜用いて形成することができる。また、絶縁膜108としては、例えば、酸化物絶縁膜または窒化物絶縁膜を単層または積層して形成することができる。なお、酸化物半導体膜110との界面特性を向上させるため、絶縁膜108において少なくとも酸化物半導体膜110と接する領域は酸化物絶縁膜で形成することが好ましい。また、絶縁膜108として加熱により酸素を放出する酸化物絶縁膜を用いることで、加熱処理により絶縁膜108に含まれる酸素を、酸化物半導体膜110に移動させることが可能である。
酸化物半導体膜110は、代表的には、In−Ga酸化物、In−Zn酸化物、In−M−Zn酸化物(Mは、Mg、Al、Ti、Ga、Sn、Y、Zr、La、Ce、Nd、またはHfを表す)等の金属酸化物で形成される。なお、酸化物半導体膜110は、透光性を有する。
絶縁膜112は、酸化物絶縁膜または窒化物絶縁膜を単層または積層して形成することができる。なお、酸化物半導体膜110との界面特性を向上させるため、絶縁膜112において少なくとも酸化物半導体膜110と接する領域は酸化物絶縁膜を用いて形成することが好ましい。絶縁膜112として、例えば酸化シリコン、酸化窒化シリコン、窒化酸化シリコン、窒化シリコン、酸化アルミニウム、酸化ハフニウム、酸化ガリウムまたはGa−Zn酸化物などを用いればよく、単層または積層で設けることができる。
導電膜114、導電膜115、及び導電膜122a、122bとしては、スパッタリング法、真空蒸着法、パルスレーザー堆積(PLD)法、熱CVD法等を用いて形成することができる。また、導電膜114、導電膜115、及び導電膜122a、122bとしては、例えば、アルミニウム、クロム、銅、タンタル、チタン、モリブデン、ニッケル、鉄、コバルト、タングステンから選ばれた金属元素、または上述した金属元素を成分とする合金か、上述した金属元素を組み合わせた合金等を用いて形成することができる。また、マンガン、ジルコニウムのいずれか一または複数から選択された金属元素を用いてもよい。また、導電膜114、導電膜115、及び導電膜122a、122bは、単層構造でも、二層以上の積層構造としてもよい。例えば、シリコンを含むアルミニウム膜の単層構造、マンガンを含む銅膜の単層構造、アルミニウム膜上にチタン膜を積層する二層構造、窒化チタン膜上にチタン膜を積層する二層構造、窒化チタン膜上にタングステン膜を積層する二層構造、窒化タンタル膜または窒化タングステン膜上にタングステン膜を積層する二層構造、マンガンを含む銅膜上に銅膜を積層する二層構造、チタン膜と、そのチタン膜上にアルミニウム膜を積層し、さらにその上にチタン膜を形成する三層構造、マンガンを含む銅膜上に銅膜を積層し、さらにその上にマンガンを含む銅膜を形成する三層構造等がある。また、アルミニウムに、チタン、タンタル、タングステン、モリブデン、クロム、ネオジム、スカンジウムから選ばれた一または複数を組み合わせた合金膜、もしくは窒化膜を用いてもよい。
絶縁膜118は、水素を有する。該水素を有する絶縁膜118としては、例えば、窒化物絶縁膜が挙げられる。該窒化物絶縁膜としては、窒化シリコン、窒化酸化シリコン、窒化アルミニウム、窒化酸化アルミニウム等を用いて形成することができる。絶縁膜118に含まれる水素濃度は、1×1022atoms/cm3以上であると好ましい。また、絶縁膜118は、酸化物半導体膜110の第3の領域110cと接する。したがって、酸化物半導体膜110において、絶縁膜118に含まれる水素が酸化物半導体膜110の第3の領域110cに拡散することで、チャネル領域として機能する第1の領域110aと比較して第3の領域110cの方が、水素濃度が高い。また、低抵抗領域として機能する第2の領域110bと比較して第3の領域110cの方が、水素濃度が高い。このため、第1の領域110a及び第2の領域110bと比較して、第3の領域110cの方が導電性が高くなる。
絶縁膜120としては、酸化物絶縁膜または窒化物絶縁膜を単層または積層して形成することができる。絶縁膜120として、例えば酸化シリコン、酸化窒化シリコン、窒化酸化シリコン、窒化シリコン、酸化アルミニウム、酸化ハフニウム、酸化ガリウムまたはGa−Zn酸化物などを用いればよく、単層または積層で設けることができる。
次に、図1(A)(B)(C)に示す半導体装置の別の構成について、図3(A)(B)(C)を用いて説明する。
次に、図1(A)(B)(C)に示す半導体装置の別の構成について、図4(A)(B)を用いて説明する。
次に、図1(A)(B)(C)に示す半導体装置の別の構成について、図5(A)(B)(C)を用いて説明する。
ここで、図5(B)に、トランジスタ100Dのチャネル領域を含むA−B断面におけるバンド構造を示す。なお、酸化物半導体膜110_2は、酸化物半導体膜110_1よりもエネルギーギャップが大きいとする。また、絶縁膜108及び絶縁膜112は、酸化物半導体膜110_1及び酸化物半導体膜110_2よりもエネルギーギャップが大きいとする。また、酸化物半導体膜110_1、酸化物半導体膜110_2、絶縁膜108、及び絶縁膜112のフェルミ準位(Efと表記する。)は、それぞれの真性フェルミ準位(Eiと表記する。)の位置とする。また、導電膜114の仕事関数は、該フェルミ準位と同じ位置とする。
次に、図1に示すトランジスタ100の作製方法の一例について、図6乃至図10を用いて説明する。なお、図6乃至図10は、トランジスタ100の作製方法を説明するチャネル長方向の断面図である。
次に、図3に示すトランジスタ100Aの作製方法の一例について、以下説明する。
本実施の形態では、本発明の一態様の半導体装置に含まれる酸化物半導体膜の構成について以下詳細に説明を行う。
本実施の形態においては、先の実施の形態で例示したトランジスタを有する表示装置の一例について、図11乃至図13を用いて以下説明を行う。
図12及び図13に示す表示装置700は、引き回し配線部711と、画素部702と、ソースドライバ回路部704と、FPC端子部708と、を有する。また、引き回し配線部711は、信号線710を有する。また、画素部702は、トランジスタ750及び容量素子790を有する。また、ソースドライバ回路部704は、トランジスタ752を有する。
図12に示す表示装置700は、液晶素子775を有する。液晶素子775は、導電膜772、導電膜774、及び液晶層776を有する。導電膜774は、第2の基板705側に設けられ、対向電極としての機能を有する。図12に示す表示装置700は、導電膜772と導電膜774に印加される電圧によって、液晶層776の配向状態が変わることによって光の透過、非透過が制御され画像を表示することができる。
図13に示す表示装置700は、発光素子782を有する。発光素子782は、導電膜784、EL層786、及び導電膜788を有する。図13に示す表示装置700は、発光素子782が有するEL層786が発光することによって、画像を表示することができる。
本実施の形態では、本発明の一態様の半導体装置を有する表示装置について、図15を用いて説明を行う。
本実施の形態では、本発明の一態様の半導体装置を有する表示モジュール及び電子機器について、図16及び図17を用いて説明を行う。
100A トランジスタ
100B トランジスタ
100C トランジスタ
100D トランジスタ
102 基板
104 絶縁膜
106 導電膜
108 絶縁膜
110 酸化物半導体膜
110_1 酸化物半導体膜
110_2 酸化物半導体膜
110a 第1の領域
110a_1 第1の領域
110a_2 第1の領域
110b 第2の領域
110b_1 第2の領域
110b_2 第2の領域
110c 第3の領域
110c_1 第3の領域
110c_2 第3の領域
112 絶縁膜
113 導電膜
114 導電膜
115 導電膜
115a 導電膜
116 絶縁膜
116a 絶縁膜
118 絶縁膜
120 絶縁膜
122 導電膜
122a 導電膜
122b 導電膜
128 絶縁膜
139 開口部
140a 開口部
140b 開口部
141 膜
142 酸素
143 不純物元素
144 不純物元素
145 マスク
501 画素回路
502 画素部
504 駆動回路部
504a ゲートドライバ
504b ソースドライバ
506 保護回路
507 端子部
550 トランジスタ
552 トランジスタ
554 トランジスタ
560 容量素子
562 容量素子
570 液晶素子
572 発光素子
700 表示装置
701 基板
702 画素部
704 ソースドライバ回路部
705 基板
706 ゲートドライバ回路部
708 FPC端子部
710 信号線
711 配線部
712 シール材
716 FPC
730 絶縁膜
732 封止膜
734 絶縁膜
736 着色膜
738 遮光膜
750 トランジスタ
752 トランジスタ
760 接続電極
766 絶縁膜
770 平坦化絶縁膜
772 導電膜
774 導電膜
775 液晶素子
776 液晶層
778 構造体
780 異方性導電膜
782 発光素子
784 導電膜
786 EL層
788 導電膜
790 容量素子
791 容量素子
8000 表示モジュール
8001 上部カバー
8002 下部カバー
8003 FPC
8004 タッチパネル
8005 FPC
8006 表示パネル
8007 バックライト
8008 光源
8009 フレーム
8010 プリント基板
8011 バッテリ
9000 筐体
9001 表示部
9003 スピーカ
9005 操作キー
9006 接続端子
9007 センサ
9008 マイクロフォン
9050 操作ボタン
9051 情報
9052 情報
9053 情報
9054 情報
9055 ヒンジ
9100 テレビジョン装置
9101 携帯情報端末
9102 携帯情報端末
9200 携帯情報端末
9201 携帯情報端末
Claims (6)
- トランジスタを有する半導体装置であって、
前記トランジスタは、
第1の絶縁膜上の酸化物半導体膜と、
前記酸化物半導体膜上のゲート絶縁膜と、
前記ゲート絶縁膜上のゲート電極と、
前記ゲート電極のチャネル長方向の側面に接する導電膜と、
前記酸化物半導体膜上の第2の絶縁膜と、を有し、
前記酸化物半導体膜は、前記ゲート電極と重なる第1の領域と、前記導電膜と重なる第2の領域と、前記第2の絶縁膜と接する第3の領域と、を有し、
前記ゲート絶縁膜は、前記第1の領域及び前記第2の領域と接する領域を有し、且つ前記第3の領域と接する領域は有さず、
前記第3の領域は、前記第2の領域よりも不純物元素の濃度が高い領域を有する、半導体装置。 - トランジスタを有する半導体装置であって、
前記トランジスタは、
第1のゲート電極と、
前記第1のゲート電極上の第1の絶縁膜と、
前記第1の絶縁膜上の酸化物半導体膜と、
前記酸化物半導体膜上のゲート絶縁膜と、
前記ゲート絶縁膜上の第2のゲート電極と、
前記第2のゲート電極のチャネル長方向の側面に接する導電膜と、
前記酸化物半導体膜上の第2の絶縁膜と、を有し、
前記酸化物半導体膜は、前記第2のゲート電極と重なる第1の領域と、前記導電膜と重なる第2の領域と、前記第2の絶縁膜と接する第3の領域と、を有し、
前記ゲート絶縁膜は、前記第1の領域及び前記第2の領域と接する領域を有し、且つ前記第3の領域と接する領域は有さず、
前記第3の領域は、前記第2の領域よりも不純物元素の濃度が高い領域を有する、半導体装置。 - 請求項1又は2において、
前記第3の領域は、前記トランジスタのソース領域またはドレイン領域として機能する、半導体装置。 - 請求項1乃至3のいずれか一において、
前記第3の領域は、
水素、ホウ素、炭素、窒素、フッ素、リン、硫黄、または希ガスの1以上を有する、半導体装置。 - 請求項1乃至4のいずれか一において、
前記第3の領域は、前記第2の領域よりも水素濃度が高い領域を有する、半導体装置。 - 請求項1乃至5のいずれか一において、
前記酸化物半導体膜は、酸素と、Inと、Znと、M(Mは、Ti、Ga、Sn、Y、Zr、La、Ce、Nd、またはHfを表す)とを有する、半導体装置。
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