JP2015516690A5 - - Google Patents

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Publication number
JP2015516690A5
JP2015516690A5 JP2015512032A JP2015512032A JP2015516690A5 JP 2015516690 A5 JP2015516690 A5 JP 2015516690A5 JP 2015512032 A JP2015512032 A JP 2015512032A JP 2015512032 A JP2015512032 A JP 2015512032A JP 2015516690 A5 JP2015516690 A5 JP 2015516690A5
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Japan
Prior art keywords
charged particle
particle beam
cavity
beam generator
lithography system
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JP2015512032A
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English (en)
Japanese (ja)
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JP2015516690A (ja
JP6239596B2 (ja
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Priority claimed from PCT/EP2013/059945 external-priority patent/WO2013171214A1/en
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Publication of JP2015516690A5 publication Critical patent/JP2015516690A5/ja
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Publication of JP6239596B2 publication Critical patent/JP6239596B2/ja
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JP2015512032A 2012-05-14 2013-05-14 荷電粒子リソグラフィシステムおよびビーム発生器 Active JP6239596B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261646839P 2012-05-14 2012-05-14
US61/646,839 2012-05-14
PCT/EP2013/059945 WO2013171214A1 (en) 2012-05-14 2013-05-14 Charged particle lithography system and beam generator

Publications (3)

Publication Number Publication Date
JP2015516690A JP2015516690A (ja) 2015-06-11
JP2015516690A5 true JP2015516690A5 (enExample) 2016-07-07
JP6239596B2 JP6239596B2 (ja) 2017-11-29

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Family Applications (3)

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JP2015512040A Active JP6219374B2 (ja) 2012-05-14 2013-05-14 荷電粒子リソグラフィシステムおよびビーム発生器
JP2015512032A Active JP6239596B2 (ja) 2012-05-14 2013-05-14 荷電粒子リソグラフィシステムおよびビーム発生器
JP2017184957A Active JP6430606B2 (ja) 2012-05-14 2017-09-26 荷電粒子ビーム発生器の高電圧シールド及び冷却

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JP2015512040A Active JP6219374B2 (ja) 2012-05-14 2013-05-14 荷電粒子リソグラフィシステムおよびビーム発生器

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JP2017184957A Active JP6430606B2 (ja) 2012-05-14 2017-09-26 荷電粒子ビーム発生器の高電圧シールド及び冷却

Country Status (8)

Country Link
US (2) US9653261B2 (enExample)
EP (1) EP2852966A1 (enExample)
JP (3) JP6219374B2 (enExample)
KR (2) KR102023056B1 (enExample)
CN (3) CN104520968B (enExample)
NL (4) NL2010802C2 (enExample)
TW (2) TWI604493B (enExample)
WO (2) WO2013171229A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015101537A1 (en) * 2013-12-30 2015-07-09 Mapper Lithography Ip B.V. Cathode arrangement, electron gun, and lithography system comprising such electron gun
US10290528B2 (en) * 2014-06-13 2019-05-14 Intel Corporation Ebeam align on the fly
JP2017135218A (ja) * 2016-01-26 2017-08-03 株式会社アドバンテスト 荷電粒子ビームレンズ装置、荷電粒子ビームカラム、および荷電粒子ビーム露光装置
JP2017139339A (ja) * 2016-02-04 2017-08-10 株式会社アドバンテスト 露光装置
US9981293B2 (en) 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
US10453645B2 (en) * 2016-12-01 2019-10-22 Applied Materials Israel Ltd. Method for inspecting a specimen and charged particle multi-beam device
EP4277017A3 (en) * 2017-01-18 2024-02-21 SHINE Technologies, LLC High power ion beam generator systems and methods
US10176967B2 (en) * 2017-02-23 2019-01-08 Hermes Microvision, Inc. Load lock system for charged particle beam imaging
NL2021217B1 (en) * 2018-06-29 2020-01-07 Asml Netherlands Bv Substrate exposure system and a frame therefore
DE102019005362A1 (de) * 2019-07-31 2021-02-04 Carl Zeiss Multisem Gmbh Verfahren zum Betreiben eines Vielzahl-Teilchenstrahlsystems unter Veränderung der numerischen Apertur, zugehöriges Computerprogrammprodukt und Vielzahl-Teilchenstrahlsystem
JP2021039880A (ja) 2019-09-03 2021-03-11 株式会社日立ハイテク 荷電粒子線装置
JP7799683B2 (ja) * 2020-09-07 2026-01-15 エーエスエムエル ネザーランズ ビー．ブイ． 電磁シールドを備えた電子光学アセンブリ
CN118974871A (zh) * 2022-04-12 2024-11-15 华为技术有限公司 一种可调整的多电极准直装置
EP4307338B1 (en) * 2022-07-12 2024-11-27 Comet AG Radio frequency generator

Family Cites Families (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3157308A (en) 1961-09-05 1964-11-17 Clark Mfg Co J L Canister type container and method of making the same
US3159408A (en) 1961-10-05 1964-12-01 Grace W R & Co Chuck
US3924136A (en) * 1975-02-18 1975-12-02 Stanford Research Inst Charged particle apodized pattern imaging and exposure system
US4142133A (en) 1976-10-20 1979-02-27 Balandin Genrikh D Cathode-ray tube with variable energy of beam electrons
DE3231036A1 (de) * 1982-08-20 1984-02-23 Max Planck Gesellschaft Kombinierte elektrostatische objektiv- und emissionslinse
US4524308A (en) 1984-06-01 1985-06-18 Sony Corporation Circuits for accomplishing electron beam convergence in color cathode ray tubes
WO1994025880A1 (en) 1993-04-30 1994-11-10 Board Of Regents, The University Of Texas System Megavoltage scanning imager and method for its use
JP3253429B2 (ja) 1993-09-17 2002-02-04 富士通株式会社 電子ビーム装置
EP0766405A1 (en) 1995-09-29 1997-04-02 STMicroelectronics S.r.l. Successive approximation register without redundancy
JP3763446B2 (ja) 1999-10-18 2006-04-05 キヤノン株式会社 静電レンズ、電子ビーム描画装置、荷電ビーム応用装置、および、デバイス製造方法
EP1245036B1 (en) * 1999-12-13 2013-06-19 Semequip, Inc. Ion implantation ion source
KR100465117B1 (ko) * 2000-04-04 2005-01-05 주식회사 아도반테스토 다축전자렌즈를 이용한 멀티빔 노광장치, 복수의 전자빔을집속하는 다축전자렌즈, 반도체소자 제조방법
JP3728217B2 (ja) * 2000-04-27 2005-12-21 キヤノン株式会社 荷電粒子線露光装置およびデバイス製造方法
GB0029040D0 (en) * 2000-11-29 2001-01-10 Micromass Ltd Orthogonal time of flight mass spectrometer
JP2002217091A (ja) * 2001-01-19 2002-08-02 Nikon Corp 荷電粒子線露光装置
JP4156809B2 (ja) * 2001-01-31 2008-09-24 株式会社アドバンテスト 電子ビーム露光装置及び電子レンズ
US6797953B2 (en) 2001-02-23 2004-09-28 Fei Company Electron beam system using multiple electron beams
US6768125B2 (en) 2002-01-17 2004-07-27 Ims Nanofabrication, Gmbh Maskless particle-beam system for exposing a pattern on a substrate
US7109493B2 (en) 2002-06-15 2006-09-19 Anthony Derek Eastham Particle beam generator
JP2004063547A (ja) * 2002-07-25 2004-02-26 Nikon Corp 真空雰囲気下露光装置
EP1388883B1 (en) * 2002-08-07 2013-06-05 Fei Company Coaxial FIB-SEM column
CN100524026C (zh) 2002-10-25 2009-08-05 迈普尔平版印刷Ip有限公司 光刻系统
CN101414534B (zh) 2002-10-30 2012-10-03 迈普尔平版印刷Ip有限公司 电子束曝光系统
JP2004214480A (ja) 2003-01-07 2004-07-29 Nikon Corp 露光装置
EP1602121B1 (en) 2003-03-10 2012-06-27 Mapper Lithography Ip B.V. Apparatus for generating a plurality of beamlets
JP4113032B2 (ja) 2003-04-21 2008-07-02 キヤノン株式会社 電子銃及び電子ビーム露光装置
WO2004107050A2 (en) 2003-05-28 2004-12-09 Mapper Lithography Ip B.V. Charged particle beamlet exposure system
EP1491955A1 (en) * 2003-06-27 2004-12-29 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
EP1498930A1 (en) * 2003-07-14 2005-01-19 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device with multi-source array
JP4664293B2 (ja) 2003-07-30 2011-04-06 マッパー・リソグラフィー・アイピー・ビー．ブイ． 変調器回路
GB2406704B (en) * 2003-09-30 2007-02-07 Ims Nanofabrication Gmbh Particle-optic electrostatic lens
JP2005127800A (ja) 2003-10-22 2005-05-19 Toshiba Corp 電子線照射装置と照射方法および電子線描画装置
JP4406311B2 (ja) 2004-03-31 2010-01-27 株式会社荏原製作所 エネルギー線照射装置およびそれを用いたパタン作成方法
JP4547997B2 (ja) 2004-06-04 2010-09-22 株式会社ニコン 真空容器、露光装置、及び検査装置
EP1811553A4 (en) * 2004-10-21 2009-09-16 Hoya Corp APPARATUS AND METHOD FOR DEPOSITING FINE PARTICLES
JP2006139958A (ja) * 2004-11-10 2006-06-01 Toshiba Corp 荷電ビーム装置
JP3929459B2 (ja) 2004-11-11 2007-06-13 株式会社日立ハイテクノロジーズ 荷電粒子線露光装置
GB0425290D0 (en) * 2004-11-17 2004-12-15 Eastham Derek A Focussing masks
JP5505821B2 (ja) * 2004-11-17 2014-05-28 イーエムエス ナノファブリカツィオン アーゲー 粒子ビーム露光装置のためのパターンロック装置
US7709815B2 (en) 2005-09-16 2010-05-04 Mapper Lithography Ip B.V. Lithography system and projection method
JP4732917B2 (ja) * 2006-02-15 2011-07-27 株式会社日立ハイテクノロジーズ 走査型電子顕微鏡及び欠陥検出装置
US7521687B2 (en) 2006-03-30 2009-04-21 Tokyo Electron Limited Static electricity deflecting device, electron beam irradiating apparatus, substrate processing apparatus, substrate processing method and method of manufacturing substrate
JP4533344B2 (ja) 2006-05-19 2010-09-01 キヤノン株式会社 真空装置、露光装置、及びデバイス製造方法
EP1983548A1 (en) 2007-04-20 2008-10-22 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Emitter chamber, charged particle apparatus and method for operating same
JP5497980B2 (ja) * 2007-06-29 2014-05-21 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置、及び試料検査方法
JP5579063B2 (ja) * 2007-08-24 2014-08-27 カール・ツァイス・エスエムティー・ゲーエムベーハー 制御可能な光学素子、熱アクチュエータによる光学素子の操作方法および半導体リソグラフィのための投影露光装置
WO2009106560A1 (en) 2008-02-26 2009-09-03 Mapper Lithography Ip B.V. Projection lens arrangement
CN102017052B (zh) * 2008-02-26 2013-09-04 迈普尔平版印刷Ip有限公司 投影透镜装置
US8445869B2 (en) 2008-04-15 2013-05-21 Mapper Lithography Ip B.V. Projection lens arrangement
KR20110030466A (ko) 2008-05-23 2011-03-23 마퍼 리쏘그라피 아이피 비.브이. 이미징 시스템
WO2009147202A1 (en) 2008-06-04 2009-12-10 Mapper Lithography Ip B.V. Writing strategy
JP5250350B2 (ja) * 2008-09-12 2013-07-31 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置
CN102232237B (zh) 2008-10-01 2014-09-24 迈普尔平版印刷Ip有限公司 静电透镜构件
US10054754B2 (en) * 2009-02-04 2018-08-21 Nikon Corporation Thermal regulation of vibration-sensitive objects with conduit circuit having liquid metal, pump, and heat exchanger
DE102009009221A1 (de) * 2009-02-17 2010-08-26 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Halbleiterlithographie mit einem Aktuatorsystem
CN102422380A (zh) * 2009-02-22 2012-04-18 迈普尔平版印刷Ip有限公司 带电粒子微影设备及真空腔室中产生真空的方法
US8366423B2 (en) 2009-02-22 2013-02-05 Mapper Lithography Ip B.V. Method and arrangement for realizing a vacuum in a vacuum chamber
KR20110139699A (ko) 2009-02-22 2011-12-29 마퍼 리쏘그라피 아이피 비.브이. 리소그래피 장치 및 기판 핸들링 배열체
JP2010282799A (ja) 2009-06-03 2010-12-16 Canon Inc 荷電粒子線描画装置およびデバイス製造方法
DE112010002551B4 (de) 2009-06-16 2019-10-31 Hitachi High-Technologies Corporation Geladene teilchen abstrahlende vorrichtung
EP2486580A2 (en) 2009-10-09 2012-08-15 Mapper Lithography IP B.V. High voltage shielding arrangement
GB201003566D0 (en) * 2010-03-03 2010-04-21 Ilika Technologies Ltd Mass spectrometry apparatus and methods
GB2481883B (en) * 2010-06-08 2015-03-04 Micromass Ltd Mass spectrometer with beam expander
JP6049627B2 (ja) 2010-11-13 2016-12-21 マッパー・リソグラフィー・アイピー・ビー．ブイ． 中間チャンバを備えた荷電粒子リソグラフィシステム
TWI562186B (en) 2010-11-13 2016-12-11 Mapper Lithography Ip Bv Charged particle lithography system and method for transferring a pattern onto a surface of a target and modulation device for use in a charged particle lithography system
WO2012062854A1 (en) * 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Lithography system and method of refracting
JP5709535B2 (ja) * 2011-01-07 2015-04-30 キヤノン株式会社 電子ビーム描画装置、およびそれを用いた物品の製造方法
JP5822535B2 (ja) * 2011-05-16 2015-11-24 キヤノン株式会社 描画装置、および、物品の製造方法
JP2013008534A (ja) * 2011-06-23 2013-01-10 Canon Inc 荷電粒子線レンズ用電極
JP2013171925A (ja) * 2012-02-20 2013-09-02 Canon Inc 荷電粒子線装置、それを用いた物品の製造方法
JP5973061B2 (ja) 2012-05-14 2016-08-23 マッパー・リソグラフィー・アイピー・ビー．ブイ． 荷電粒子マルチ小ビームリソグラフィシステム及び冷却装置製造方法
JP2014116518A (ja) * 2012-12-11 2014-06-26 Canon Inc 描画装置及び物品の製造方法
US10168208B2 (en) 2015-04-03 2019-01-01 Hitachi High-Technologies Corporation Light amount detection device, immune analyzing apparatus and charged particle beam apparatus that each use the light amount detection device

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