JP2015516690A5 - - Google Patents

Download PDF

Info

Publication number
JP2015516690A5
JP2015516690A5 JP2015512032A JP2015512032A JP2015516690A5 JP 2015516690 A5 JP2015516690 A5 JP 2015516690A5 JP 2015512032 A JP2015512032 A JP 2015512032A JP 2015512032 A JP2015512032 A JP 2015512032A JP 2015516690 A5 JP2015516690 A5 JP 2015516690A5
Authority
JP
Japan
Prior art keywords
charged particle
particle beam
cavity
beam generator
lithography system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2015512032A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015516690A (ja
JP6239596B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/EP2013/059945 external-priority patent/WO2013171214A1/en
Publication of JP2015516690A publication Critical patent/JP2015516690A/ja
Publication of JP2015516690A5 publication Critical patent/JP2015516690A5/ja
Application granted granted Critical
Publication of JP6239596B2 publication Critical patent/JP6239596B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2015512032A 2012-05-14 2013-05-14 荷電粒子リソグラフィシステムおよびビーム発生器 Active JP6239596B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261646839P 2012-05-14 2012-05-14
US61/646,839 2012-05-14
PCT/EP2013/059945 WO2013171214A1 (en) 2012-05-14 2013-05-14 Charged particle lithography system and beam generator

Publications (3)

Publication Number Publication Date
JP2015516690A JP2015516690A (ja) 2015-06-11
JP2015516690A5 true JP2015516690A5 (enExample) 2016-07-07
JP6239596B2 JP6239596B2 (ja) 2017-11-29

Family

ID=48463976

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2015512032A Active JP6239596B2 (ja) 2012-05-14 2013-05-14 荷電粒子リソグラフィシステムおよびビーム発生器
JP2015512040A Active JP6219374B2 (ja) 2012-05-14 2013-05-14 荷電粒子リソグラフィシステムおよびビーム発生器
JP2017184957A Active JP6430606B2 (ja) 2012-05-14 2017-09-26 荷電粒子ビーム発生器の高電圧シールド及び冷却

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2015512040A Active JP6219374B2 (ja) 2012-05-14 2013-05-14 荷電粒子リソグラフィシステムおよびビーム発生器
JP2017184957A Active JP6430606B2 (ja) 2012-05-14 2017-09-26 荷電粒子ビーム発生器の高電圧シールド及び冷却

Country Status (8)

Country Link
US (2) US9653261B2 (enExample)
EP (1) EP2852966A1 (enExample)
JP (3) JP6239596B2 (enExample)
KR (2) KR102023056B1 (enExample)
CN (3) CN104520968B (enExample)
NL (4) NL2010802C2 (enExample)
TW (2) TW201401330A (enExample)
WO (2) WO2013171229A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9466453B2 (en) * 2013-12-30 2016-10-11 Mapper Lithography Ip B.V. Cathode arrangement, electron gun, and lithography system comprising such electron gun
CN106463347B (zh) * 2014-06-13 2020-09-15 英特尔公司 即时电子束对准
JP2017135218A (ja) * 2016-01-26 2017-08-03 株式会社アドバンテスト 荷電粒子ビームレンズ装置、荷電粒子ビームカラム、および荷電粒子ビーム露光装置
JP2017139339A (ja) * 2016-02-04 2017-08-10 株式会社アドバンテスト 露光装置
US9981293B2 (en) 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
US10453645B2 (en) * 2016-12-01 2019-10-22 Applied Materials Israel Ltd. Method for inspecting a specimen and charged particle multi-beam device
CA3229072A1 (en) * 2017-01-18 2018-08-09 Shine Technologies, Llc High power ion beam generator systems and methods
US10176967B2 (en) * 2017-02-23 2019-01-08 Hermes Microvision, Inc. Load lock system for charged particle beam imaging
NL2021217B1 (en) * 2018-06-29 2020-01-07 Asml Netherlands Bv Substrate exposure system and a frame therefore
DE102019005362A1 (de) * 2019-07-31 2021-02-04 Carl Zeiss Multisem Gmbh Verfahren zum Betreiben eines Vielzahl-Teilchenstrahlsystems unter Veränderung der numerischen Apertur, zugehöriges Computerprogrammprodukt und Vielzahl-Teilchenstrahlsystem
JP2021039880A (ja) 2019-09-03 2021-03-11 株式会社日立ハイテク 荷電粒子線装置
KR20230065267A (ko) * 2020-09-07 2023-05-11 에이에스엠엘 네델란즈 비.브이. 전자기 차폐부를 포함하는 전자-광학 조립체
WO2023197131A1 (zh) * 2022-04-12 2023-10-19 华为技术有限公司 一种可调整的多电极准直装置

Family Cites Families (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3157308A (en) 1961-09-05 1964-11-17 Clark Mfg Co J L Canister type container and method of making the same
US3159408A (en) 1961-10-05 1964-12-01 Grace W R & Co Chuck
US3924136A (en) * 1975-02-18 1975-12-02 Stanford Research Inst Charged particle apodized pattern imaging and exposure system
US4142133A (en) * 1976-10-20 1979-02-27 Balandin Genrikh D Cathode-ray tube with variable energy of beam electrons
DE3231036A1 (de) * 1982-08-20 1984-02-23 Max Planck Gesellschaft Kombinierte elektrostatische objektiv- und emissionslinse
US4524308A (en) 1984-06-01 1985-06-18 Sony Corporation Circuits for accomplishing electron beam convergence in color cathode ray tubes
AU6449994A (en) 1993-04-30 1994-11-21 Board Of Regents, The University Of Texas System Megavoltage scanning imager and method for its use
JP3253429B2 (ja) 1993-09-17 2002-02-04 富士通株式会社 電子ビーム装置
EP0766405A1 (en) 1995-09-29 1997-04-02 STMicroelectronics S.r.l. Successive approximation register without redundancy
JP3763446B2 (ja) 1999-10-18 2006-04-05 キヤノン株式会社 静電レンズ、電子ビーム描画装置、荷電ビーム応用装置、および、デバイス製造方法
EP1245036B1 (en) * 1999-12-13 2013-06-19 Semequip, Inc. Ion implantation ion source
WO2001075948A1 (en) * 2000-04-04 2001-10-11 Advantest Corporation Multibeam exposure apparatus comprising multiaxis electron lens, multiaxis electron lens for focusing electron beams, and method for manufacturing semiconductor device
JP3728217B2 (ja) * 2000-04-27 2005-12-21 キヤノン株式会社 荷電粒子線露光装置およびデバイス製造方法
GB0029040D0 (en) * 2000-11-29 2001-01-10 Micromass Ltd Orthogonal time of flight mass spectrometer
JP2002217091A (ja) 2001-01-19 2002-08-02 Nikon Corp 荷電粒子線露光装置
JP4156809B2 (ja) * 2001-01-31 2008-09-24 株式会社アドバンテスト 電子ビーム露光装置及び電子レンズ
US6797953B2 (en) 2001-02-23 2004-09-28 Fei Company Electron beam system using multiple electron beams
US6768125B2 (en) 2002-01-17 2004-07-27 Ims Nanofabrication, Gmbh Maskless particle-beam system for exposing a pattern on a substrate
NZ537145A (en) 2002-06-15 2006-09-29 Nfab Ltd Charged particle beam generator
JP2004063547A (ja) * 2002-07-25 2004-02-26 Nikon Corp 真空雰囲気下露光装置
EP1388883B1 (en) * 2002-08-07 2013-06-05 Fei Company Coaxial FIB-SEM column
KR101060557B1 (ko) 2002-10-25 2011-08-31 마퍼 리쏘그라피 아이피 비.브이. 리소그라피 시스템
KR101077098B1 (ko) 2002-10-30 2011-10-26 마퍼 리쏘그라피 아이피 비.브이. 전자 빔 노출 시스템
JP2004214480A (ja) 2003-01-07 2004-07-29 Nikon Corp 露光装置
KR101068607B1 (ko) 2003-03-10 2011-09-30 마퍼 리쏘그라피 아이피 비.브이. 복수 개의 빔렛 발생 장치
JP4113032B2 (ja) 2003-04-21 2008-07-02 キヤノン株式会社 電子銃及び電子ビーム露光装置
JP4949843B2 (ja) 2003-05-28 2012-06-13 マッパー・リソグラフィー・アイピー・ビー．ブイ． 荷電粒子ビームレット露光システム
EP1491955A1 (en) 2003-06-27 2004-12-29 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
EP1498930A1 (en) * 2003-07-14 2005-01-19 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device with multi-source array
WO2005010618A2 (en) 2003-07-30 2005-02-03 Mapper Lithography Ip B.V. Modulator circuitry
GB2406704B (en) 2003-09-30 2007-02-07 Ims Nanofabrication Gmbh Particle-optic electrostatic lens
JP2005127800A (ja) 2003-10-22 2005-05-19 Toshiba Corp 電子線照射装置と照射方法および電子線描画装置
JP4406311B2 (ja) * 2004-03-31 2010-01-27 株式会社荏原製作所 エネルギー線照射装置およびそれを用いたパタン作成方法
JP4547997B2 (ja) * 2004-06-04 2010-09-22 株式会社ニコン 真空容器、露光装置、及び検査装置
JP4467568B2 (ja) * 2004-10-21 2010-05-26 Ｈｏｙａ株式会社 微粒子堆積装置及び微粒子堆積物製造方法
JP2006139958A (ja) * 2004-11-10 2006-06-01 Toshiba Corp 荷電ビーム装置
JP3929459B2 (ja) * 2004-11-11 2007-06-13 株式会社日立ハイテクノロジーズ 荷電粒子線露光装置
WO2006053359A1 (en) * 2004-11-17 2006-05-26 Ims Nanofabrication Gmbh Pattern lock system for maskless particle-beam exposure apparatus
GB0425290D0 (en) * 2004-11-17 2004-12-15 Eastham Derek A Focussing masks
US7709815B2 (en) 2005-09-16 2010-05-04 Mapper Lithography Ip B.V. Lithography system and projection method
JP4732917B2 (ja) * 2006-02-15 2011-07-27 株式会社日立ハイテクノロジーズ 走査型電子顕微鏡及び欠陥検出装置
US7521687B2 (en) 2006-03-30 2009-04-21 Tokyo Electron Limited Static electricity deflecting device, electron beam irradiating apparatus, substrate processing apparatus, substrate processing method and method of manufacturing substrate
JP4533344B2 (ja) 2006-05-19 2010-09-01 キヤノン株式会社 真空装置、露光装置、及びデバイス製造方法
EP1983548A1 (en) 2007-04-20 2008-10-22 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Emitter chamber, charged particle apparatus and method for operating same
JP5497980B2 (ja) * 2007-06-29 2014-05-21 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置、及び試料検査方法
EP2181357A1 (en) * 2007-08-24 2010-05-05 Carl Zeiss SMT AG Controllable optical element and method for operating an optical element with thermal actuators and projection exposure apparatus for semiconductor lithography
US8445869B2 (en) 2008-04-15 2013-05-21 Mapper Lithography Ip B.V. Projection lens arrangement
WO2009106397A1 (en) * 2008-02-26 2009-09-03 Mapper Lithography Ip B.V. Projection lens arrangement
US8089056B2 (en) 2008-02-26 2012-01-03 Mapper Lithography Ip B.V. Projection lens arrangement
WO2009141428A1 (en) 2008-05-23 2009-11-26 Mapper Lithography Ip B.V. Imaging system
JP5743886B2 (ja) 2008-06-04 2015-07-01 マッパー・リソグラフィー・アイピー・ビー．ブイ． ターゲットを露光するための方法およびシステム
JP5250350B2 (ja) * 2008-09-12 2013-07-31 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置
TWI479530B (zh) 2008-10-01 2015-04-01 Mapper Lithography Ip Bv 靜電透鏡結構、靜電透鏡陣列、帶電粒子的子束微影系統以及製造絕緣結構的方法
US10054754B2 (en) * 2009-02-04 2018-08-21 Nikon Corporation Thermal regulation of vibration-sensitive objects with conduit circuit having liquid metal, pump, and heat exchanger
DE102009009221A1 (de) * 2009-02-17 2010-08-26 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Halbleiterlithographie mit einem Aktuatorsystem
CN102414775A (zh) 2009-02-22 2012-04-11 迈普尔平版印刷Ip有限公司 用于在真空腔中实现真空的方法和配置
CN102414776A (zh) 2009-02-22 2012-04-11 迈普尔平版印刷Ip有限公司 微影机及基板处理的配置
WO2010094719A1 (en) * 2009-02-22 2010-08-26 Mapper Lithography Ip B.V. Charged particle lithography apparatus and method of generating vacuum in a vacuum chamber
JP2010282799A (ja) * 2009-06-03 2010-12-16 Canon Inc 荷電粒子線描画装置およびデバイス製造方法
US8426835B2 (en) * 2009-06-16 2013-04-23 Hitachi High-Technologies Corporation Charged particle radiation device
JP5599889B2 (ja) * 2009-10-09 2014-10-01 マッパー・リソグラフィー・アイピー・ビー．ブイ． 高電圧遮蔽配置
GB201003566D0 (en) * 2010-03-03 2010-04-21 Ilika Technologies Ltd Mass spectrometry apparatus and methods
EP2595174B8 (en) * 2010-06-08 2019-01-16 Micromass UK Limited Mass spectrometer comprising two Time of Flight analysers for analysing both positive and negative ions
US8586949B2 (en) 2010-11-13 2013-11-19 Mapper Lithography Ip B.V. Charged particle lithography system with intermediate chamber
WO2012062854A1 (en) * 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Lithography system and method of refracting
WO2012062934A1 (en) 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Charged particle beam modulator
JP5709535B2 (ja) * 2011-01-07 2015-04-30 キヤノン株式会社 電子ビーム描画装置、およびそれを用いた物品の製造方法
JP5822535B2 (ja) * 2011-05-16 2015-11-24 キヤノン株式会社 描画装置、および、物品の製造方法
JP2013008534A (ja) * 2011-06-23 2013-01-10 Canon Inc 荷電粒子線レンズ用電極
JP2013171925A (ja) * 2012-02-20 2013-09-02 Canon Inc 荷電粒子線装置、それを用いた物品の製造方法
KR101945964B1 (ko) 2012-05-14 2019-02-11 마퍼 리쏘그라피 아이피 비.브이. 하전 입자 다중-빔렛 리소그래피 시스템 및 냉각 장치 제조 방법
JP2014116518A (ja) * 2012-12-11 2014-06-26 Canon Inc 描画装置及び物品の製造方法
JP6352529B2 (ja) 2015-04-03 2018-07-04 株式会社日立ハイテクノロジーズ 光量検出装置、それを用いた免疫分析装置および荷電粒子線装置

Similar Documents

Publication Publication Date Title
JP2015516690A5 (enExample)
JP2018041964A5 (enExample)
JP6073518B2 (ja) 電極冷却装置
JP4484868B2 (ja) 複数の小ビームを発生させるための装置
JP5068180B2 (ja) 静電ゾーンプレートを備える荷電粒子曝露
JP6239596B2 (ja) 荷電粒子リソグラフィシステムおよびビーム発生器
KR101623481B1 (ko) 멀티 하전 입자빔 묘화 장치
JP2014519724A5 (enExample)
JP7329637B2 (ja) 電子ビームシステム及び方法
JP2017501553A5 (enExample)
US20210383941A1 (en) Vacuum chamber arrangement for charged particle beam generator
IL273564B2 (en) Device for using charged particle beams
US12387903B2 (en) Aberration correction in charged particle system
JP2013182868A (ja) Ｘ線管
TWI742223B (zh) 電子束系統及方法，以及掃描電子顯微鏡
JP2013507733A5 (enExample)
KR101439209B1 (ko) 에어 분사 방식을 갖는 연엑스선 이오나이저
TWI791831B (zh) 電子槍系統及使用電子槍系統的方法
KR101686821B1 (ko) X선 발생기
CN104658841A (zh) X射线管
JP7062559B2 (ja) 荷電粒子装置
WO2006126872A1 (en) Apparatus for the generation of parallel beamlets
JP2019139950A5 (enExample)
Khursheed et al. Design of a chromatic aberration corrected time-of-flight electron emission microscope (TOFEEM)